Showing 1–1 of 1 results for author: Chouvaev, D
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Strong Tunneling and Coulomb Blockade in a Single-Electron Transistor
Authors:
D. Chouvaev,
L. S. Kuzmin,
D. S. Golubev,
A. D. Zaikin
Abstract:
We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$Ω$)$^{-1}$. A good agreement between our experimental data and theoretical results for the stro…
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We have developed a detailed experimental study of a single-electron transistor in a strong tunneling regime. Although weakened by strong charge fluctuations, Coulomb effects were found to persist in all samples including one with the effective conductance 8 times higher than the quantum value (6.45 k$Ω$)$^{-1}$. A good agreement between our experimental data and theoretical results for the strong tunneling limit is found. A reliable operation of transistors with conductances 3-4 times larger than the quantum value is demonstrated.
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Submitted 2 March, 1998;
originally announced March 1998.