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Negative-charge-storing mechanism of potassium-ion electrets used for vibration-powered generators: Microscopic study of a-SiO2 with and without potassium atoms
Authors:
Toru Nakanishi,
Takeshi Miyajima,
Kenta Chokawa,
Masaaki Araidai,
Hiroshi Toshiyoshi,
Tatsuhiko Sugiyama,
Gen Hashiguchi,
Kenji Shiraishi
Abstract:
A potassium-ion electret, which is a key element of vibration-powered microelectromechanical generators, can store negative charge almost permanently. However, the mechanism by which this negative charge is stored is still unclear. We theoretically study the atomic and electronic structures of amorphous silica (a-SiO2) with and without potassium atoms using first-principles molecular-dynamics calc…
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A potassium-ion electret, which is a key element of vibration-powered microelectromechanical generators, can store negative charge almost permanently. However, the mechanism by which this negative charge is stored is still unclear. We theoretically study the atomic and electronic structures of amorphous silica (a-SiO2) with and without potassium atoms using first-principles molecular-dynamics calculations. Our calculations show that a fivefold-coordinated Si atom with five Si-O bonds (an SiO5 structure) is the characteristic local structure of a-SiO2 with potassium atomsm, which becomes negatively charged and remains so even after removal of the potassium atoms. These results indicate that this SiO5 structure is the physical origin of the robust negative charge observed in potassium-ion electrets. We also find that the SiO5 structure has a Raman peak at 1000cm-1.
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Submitted 9 September, 2020;
originally announced September 2020.
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Screw dislocation that converts p-type GaN to n-type: Microscopic study on the Mg condensation and the leakage current in p-n diodes
Authors:
Takashi Nakano,
Yosuke Harashima,
Kenta Chokawa,
Kenji Shiraishi,
Atsushi Oshiyama,
Yoshihiro Kangawa,
Shigeyoshi Usami,
Norihito Mayama,
Kazuya Toda,
Atsushi Tanaka,
Yoshio Honda,
Hiroshi Amano
Abstract:
Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in…
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Recent experiments suggest that Mg condensation at threading dislocations induce current leakage, leading to degradation of GaN-based power devices. To study this issue, we perform first-principles total-energy electronic-structure calculations for various Mg and dislocation complexes. We find that threading screw dislocations (TSDs) indeed attract Mg impurities, and that the electronic levels in the energy gap induced by the dislocations are elevated towards the conduction band as the Mg impurity approaches the dislocation line, indicating that the Mg-TSD complex is a donor. The formation of the Mg-TSD complex is unequivocally evidenced by our atom probe tomography in which Mg condensation and diffusion through [0001] screw dislocations is observed in p-n diodes. These findings provide a novel picture that the Mg being a p-type impurity in GaN diffuses toward the TSD and then locally forms an n-type region. The appearance of this region along the TSD results the reverse leakage current.
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Submitted 15 April, 2020;
originally announced April 2020.
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Intrinsic Origin of Negative Fixed Charge in Wet Oxidation for Silicon Carbide
Authors:
Yasuhiro Ebihara,
Kenta Chokawa,
Shigenori Kato,
Katsumasa Kamiya,
Kenji Shiraishi
Abstract:
We demonstrate on the basis of first-principles calculations that the formation of carbonate-like moiety in SiO$_2$ could be the intrinsic origin of negative fixed charge in SiC thermal oxidation. We find that two possible origins for the negative fixed charges are O-lone-pair state and a negatively charged CO$_3$ ion in SiO$_2$. Such CO$_3$ ion is able to be formed as a result of the existence of…
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We demonstrate on the basis of first-principles calculations that the formation of carbonate-like moiety in SiO$_2$ could be the intrinsic origin of negative fixed charge in SiC thermal oxidation. We find that two possible origins for the negative fixed charges are O-lone-pair state and a negatively charged CO$_3$ ion in SiO$_2$. Such CO$_3$ ion is able to be formed as a result of the existence of residual C atoms in SiO$_2$, which are expected to be emitted from the interface between SiC and SiO$_2$, and the incorporation of H atoms during wet oxidation.
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Submitted 24 April, 2012;
originally announced April 2012.
