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Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Authors:
Gwangwoo Kim,
Sung-Soo Kim,
Jonghyuk Jeon,
Seong In Yoon,
Seokmo Hong,
Young Jin Cho,
Abhishek Misra,
Servet Ozdemir,
Jun Yin,
Davit Ghazaryan,
Mathew Holwill,
Artem Mishchenko,
Daria V. Andreeva,
Yong-Jin Kim,
Hu Young Jeong,
A-Rang Jang,
Hyun-Jong Chung,
Andre K. Geim,
Kostya S. Novoselov,
Byeong-Hyeok Sohn,
Hyeon Suk Shin
Abstract:
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical…
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Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.
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Submitted 16 January, 2019;
originally announced January 2019.
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Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga$_{1-x}$Mn$_x$As/GaAs:Be
Authors:
J. -H. Chung,
S. J. Chung,
Sanghoon Lee,
B. J. Kirby,
J. A. Borchers,
Y. J. Cho,
X. Liu,
J. K. Furdyna
Abstract:
We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicati…
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We use neutron reflectometry to investigate the interlayer exchange coupling between Ga$_{0.97}$Mn$_{0.03}$As ferromagnetic semiconductor layers separated by non-magnetic Be-doped GaAs spacers. Polarized neutron reflectivity measured below the Curie temperature of Ga$_{0.97}$Mn$_{0.03}$As reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers are antiferromagnetic (AFM). When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by charge carriers introduced via Be doping. The behavior of magnetization of the multilayers measured by DC magnetometry is consistent with the neutron reflectometry results.
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Submitted 5 September, 2008;
originally announced September 2008.
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Electron-mediated ferromagnetism and small spin-orbit interaction in a molecular-beam-epitaxy grown n-type $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-doping
Authors:
A. Bove,
F. Altomare,
N. B. Kundtz,
Albert M. Chang,
Y. J. Cho,
X. Liu,
J. Furdyna
Abstract:
We report the first evidence of electron-mediated ferromagnetism in a molecular-beam-epitaxy (MBE) grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-doping. The interaction between the magnetic dopants (Mn) and the Two-Dimensional Electron Gas (2DEG) realizes magnetic ordering when the temperature is below the Curie temperature ($T_{C} \sim 1.7K$) and the 2DEG is brought in close proxi…
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We report the first evidence of electron-mediated ferromagnetism in a molecular-beam-epitaxy (MBE) grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-doping. The interaction between the magnetic dopants (Mn) and the Two-Dimensional Electron Gas (2DEG) realizes magnetic ordering when the temperature is below the Curie temperature ($T_{C} \sim 1.7K$) and the 2DEG is brought in close proximity to the Mn layer by gating. The Anomalous Hall Effect (AHE) contribution to the total Hall resistance is shown to be about three to four orders of magnitude smaller than in the case of hole-mediated ferromagnetism indicating the presence of small spin-orbit interaction.
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Submitted 2 July, 2008; v1 submitted 26 February, 2008;
originally announced February 2008.
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A novel technique to make Ohmic contact to a buried two-dimensional electron gas in a molecular-beam-epitaxy grown $GaAs/Al_{0.3}Ga_{0.7}As$ heterostructure with Mn $δ$-doping
Authors:
A. Bove,
F. Altomare,
N. B. Kundtz,
Albert M. Chang,
Y. J. Cho,
X. Liu,
J. Furdyna
Abstract:
We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n \sim 1.08 \times 10^{12} cm^{-2}$ and a mobility $μ\sim 600 cm^{2} / (Vs)$ at T $\sim$ 4.2K. As far as we know this is the highest mobility value reported in the literature for GaMnAs systems. A novel technique wa…
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We report on the growth and characterization of a new Diluted Magnetic Semiconductor (DMS) heterostructure that presents a Two-Dimensional Electron Gas (2DEG) with a carrier density $n \sim 1.08 \times 10^{12} cm^{-2}$ and a mobility $μ\sim 600 cm^{2} / (Vs)$ at T $\sim$ 4.2K. As far as we know this is the highest mobility value reported in the literature for GaMnAs systems. A novel technique was developed to make Ohmic contact to the buried 2DEG without destroying the magnetic properties of our crystal.
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Submitted 18 July, 2008; v1 submitted 26 February, 2008;
originally announced February 2008.
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Definitive Evidence of Interlayer Coupling Between (Ga,Mn)As Layers Separated by a Nonmagnetic Spacer
Authors:
B. J. Kirby,
J. A. Borchers,
X. Liu,
Y. J. Cho,
M. Dobrowolska,
J. K. Furdyna
Abstract:
We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3-12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we obse…
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We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3-12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we observe that for the sample with the thickest spacer layer, modulation doping by the(Al,Be,Ga)As results in (Ga,Mn)As layers with very different temperature dependent magnetizations. However, as the spacer layer thickness is reduced, the temperature dependent magnetizations of the top an bottom (Ga,Mn)As layers become progressively more similar - a trend we find to be independent of the crystallographic direction along which spins are magnetized. These results definitively show that (Ga,Mn)As layers can couple across a non-magnetic spacer, and that such coupling depends on spacer thickness.
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Submitted 10 September, 2007; v1 submitted 16 August, 2007;
originally announced August 2007.
