Showing 1–2 of 2 results for author: Chiou, Y
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Unusual Field Dependence of Anomalous Hall Effect in Ta/TbFeCo
Authors:
M. D. Davydova,
Jong-Ching Wu,
Sheng-Zhe Ciou,
Yi-Ru Chiou,
P. N. Skirdkov,
K. A. Zvezdin,
A. V. Kimel,
Lin-Xiu Ye,
Te-Ho Wu,
Ramesh Chandra Bhatt,
A. K. Zvezdin
Abstract:
Experimental studies of anomalous Hall effect are performed for thin filmed Ta/TbFeCo in a wide range of temperatures and magnetic fields up to 3 T. While far from the compensation temperature (TM=277 K) the field dependence has a conventional shape of a single hysteresis loop, just below the compensation point the dependence is anomalous having the shape of a triple hysteresis. To understand this…
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Experimental studies of anomalous Hall effect are performed for thin filmed Ta/TbFeCo in a wide range of temperatures and magnetic fields up to 3 T. While far from the compensation temperature (TM=277 K) the field dependence has a conventional shape of a single hysteresis loop, just below the compensation point the dependence is anomalous having the shape of a triple hysteresis. To understand this behavior, we experimentally reveal the magnetic phase diagram and theoretically analyze it in terms of spin-reorientation phase transitions. We show that one should expect anomalous hysteresis loops below the compensation point if in the vicinity of it the magnetic anisotropy is dominated by FeCo sublattice due to interaction with Ta.
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Submitted 26 August, 2019;
originally announced August 2019.
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Direct Measurement of the Magnitude of van der Waals interaction of Single and Multilayer Graphene
Authors:
Yu-Cheng Chiou,
Tuza Adeyemi Olukan,
Mariam Ali Almahri,
Harry Apostoleris,
Cheng Hsiang Chiu,
Chia-Yun Lai,
Jin-You Lu,
Sergio Santos,
Ibraheem Almansouri,
Matteo Chiesa
Abstract:
Vertical stacking of monolayers via van der Waals assembly is an emerging field that opens promising routes toward engineering physical properties of two-dimensional (2D) materials. Industrial exploitation of these engineering heterostructures as robust functional materials still requires bounding their measured properties so to enhance theoretical tractability and assist in experimental designs.…
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Vertical stacking of monolayers via van der Waals assembly is an emerging field that opens promising routes toward engineering physical properties of two-dimensional (2D) materials. Industrial exploitation of these engineering heterostructures as robust functional materials still requires bounding their measured properties so to enhance theoretical tractability and assist in experimental designs. Specifically, the short-range attractive van der Waals forces are responsible for the adhesion of chemically inert components and are recognized to play a dominant role in the functionality of these structures. Here we reliably quantify the the strength of van der Waals forces in terms of an effective Hamaker parameter for CVD-grown graphene and show how it scales by a factor of two or three from single to multiple layers on standard supporting surfaces such as copper or silicon oxide. Furthermore, direct measurements on freestanding graphene provide the means to discern the interplay between the van der Waals potential of graphene and its supporting substrate. Our results demonstrated that the underlying substrates could enhance or reduce the van der Waals force of graphene surfaces, and its consequences are explained in terms of a Lifshitz theory-based analytical model.
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Submitted 13 June, 2018;
originally announced June 2018.