Influence of oxygen-defects on intraband terahertz conductivity of carbon nanotubes
Authors:
Maksim Paukov,
Shuang Sun,
Dmitry Krasnikov,
Arina Radivon,
Gennady Komandin,
Andrey Vyshnevyy,
Emil Chiglintsev,
Stanislav Colar,
Kirill Brekhov,
Kirill Zaytsev,
Sergei Garnov,
Nadzeya Valynets,
Albert Nasibulin,
Aleksey Arsenin,
Valentyn Volkov,
Alexander Chernov,
Yan Zhang,
Maria Burdanova
Abstract:
The exceptional charge transport properties of single-walled carbon nanotubes (SWCNTs) enable numerous ultrafast optoelectronic applications. Modifying SWCNTs by introducing defects significantly impacts the performance of nanotube-based devices, making defect characterization crucial. This research tracked these effects in oxygen plasma-treated SWCNT thin films. Sub-picosecond electric fields of…
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The exceptional charge transport properties of single-walled carbon nanotubes (SWCNTs) enable numerous ultrafast optoelectronic applications. Modifying SWCNTs by introducing defects significantly impacts the performance of nanotube-based devices, making defect characterization crucial. This research tracked these effects in oxygen plasma-treated SWCNT thin films. Sub-picosecond electric fields of varying strengths and additional photoexcitation were used to assess how defects influence charge carrier transport. Changes in effective conductivity within the terahertz (THz) range were found to be strongly dependent on impurity levels. The plasmon resonance shift to higher THz frequencies aligns with the defect-induced reduction in conductivity and slowed carrier migration within the network. An increase in THz field strength resulted in diminished conductivity due to intraband absorption bleaching. To address the emergence of hot charge carriers, a modified Drude model, which considers non-equilibrium charge carrier distribution via fielddependent scattering rates, was applied. The dominant charge-impurity scattering rate in plasma-treated samples corresponded with an increase in defects. Additionally, the impact of defects on charge carrier dynamics on a picosecond timescale was examined. The modeled plasma-treated SWCNTs wire-grid polarizer for the THz range reveals the potential for multi-level engineering of THz devices to customize properties through controlled defect populations.
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Submitted 1 July, 2025;
originally announced July 2025.
Tailored Vapor Deposition Unlocks Large-Grain, Wafer-Scale Epitaxial Growth of 2D Magnetic CrCl3
Authors:
Vivek Kumar,
Abhishek Jangid,
Manas Sharma,
Manvi Verma,
Jampala Pasyanthi,
Keerthana S Kumar,
Piyush Sharma,
Emil O. Chiglintsev,
Mikhail I. Panin,
Sudeep N. Punnathanam,
Alexander I. Chernov,
Ananth Govind Rajan,
Akshay Singh
Abstract:
Two-dimensional magnetic materials (2D-MM) are an exciting playground for fundamental research, and for spintronics and quantum sensing. However, their large-grain large-area synthesis using scalable vapour deposition methods is still an unsolved challenge. Here, we develop a tailored approach for centimetre-scale growth of semiconducting 2D-MM CrCl3 films on mica substrate, via physical vapour tr…
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Two-dimensional magnetic materials (2D-MM) are an exciting playground for fundamental research, and for spintronics and quantum sensing. However, their large-grain large-area synthesis using scalable vapour deposition methods is still an unsolved challenge. Here, we develop a tailored approach for centimetre-scale growth of semiconducting 2D-MM CrCl3 films on mica substrate, via physical vapour transport deposition. A controlled synthesis protocol, enabled via innovations concerning light management, very-high carrier-gas flow, precursor flux, and oxygen/moisture removal, is critical for wafer-scale growth. Optical, stoichiometric, structural, and magnetic characterization identify crystalline, phase-pure 2D-MM CrCl3. Substrate temperature tunes thickness of films from few-layers to tens of nanometres. Further, selective-area growth and large-area transfer are demonstrated. Substrate-dependent growth features are explained by density functional theory and state-of-the-art machine learning interatomic potential-based atomic-scale simulations. This scalable vapour deposition approach can be applied for growth of several 2D-MM, and low growth temperature (~500 C) will enable creation of hybrid heterostructures.
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Submitted 22 May, 2025;
originally announced May 2025.
