Showing 1–11 of 11 results for author: Chigarev, S G

Current-induced resonance in a ferromagnet - antiferromagnet junction

Authors: S. G. Chigarev, E. M. Epshtein, Yu. V. Gulyaev, V. D. Kotov, G. M. Mikhailov, P. E. Zilberman

Abstract: We calculate the response of a ferromagnet - antiferromagnet junction to a high-frequency magnetic field as a function of the spin-polarized current through the junction. Conditions are choused under which the response is zero in absence of such a current. It is shown that increasing in the current density leads to proportional increase in the resonance frequency and resonant absorption. A princip… ▽ More We calculate the response of a ferromagnet - antiferromagnet junction to a high-frequency magnetic field as a function of the spin-polarized current through the junction. Conditions are choused under which the response is zero in absence of such a current. It is shown that increasing in the current density leads to proportional increase in the resonance frequency and resonant absorption. A principal possibility is indicated of using ferromagnet - antiferromagnet junction as a terahertz radiation detector. △ Less

Submitted 1 March, 2012; originally announced March 2012.

Comments: 10 pages, 4 figures

Efficiency of spin-injection terahertz oscillator

Authors: Yu. V. Gulyaev, S. G. Chigarev, I. V. Malikov, G. M. Mikhailov, P. E. Zilberman, E. M. Epshtein

Abstract: Energy efficiency in terahertz range is evaluated experimentally of a spin-injection oscillator based on a ferromagnetic rod-film structure with point contact between the components. Choice of the film material influences substantially the efficiency. A magnetic flux concentrator is used to improve the efficiency. It is found from the measurements that the quantum efficiency can exceed unity. The… ▽ More Energy efficiency in terahertz range is evaluated experimentally of a spin-injection oscillator based on a ferromagnetic rod-film structure with point contact between the components. Choice of the film material influences substantially the efficiency. A magnetic flux concentrator is used to improve the efficiency. It is found from the measurements that the quantum efficiency can exceed unity. The latter indicates substantial contribution of stimulated radiative transitions. △ Less

Submitted 28 May, 2011; originally announced May 2011.

Comments: 8 pages, 5 figures

Spin-injection terahertz radiation in magnetic junctions

Authors: S. G. Chigarev, E. M. Epshtein, Yu. V. Gulyaev, I. V. Malikov, G. M. Mikhailov, A. I. Panas, V. G. Shofman, P. E. Zilberman

Abstract: Electromagnetic radiation of 1 - 10 THz range has been found at room temperature in a structure with a point contact between a ferromagnetic rod and a thin ferromagnetic film under electric current of high enough density. The radiation is due to nonequilibrium spin injection between the structure components. By estimates, the injection can lead to inverted population of the spin subbands. The radi… ▽ More Electromagnetic radiation of 1 - 10 THz range has been found at room temperature in a structure with a point contact between a ferromagnetic rod and a thin ferromagnetic film under electric current of high enough density. The radiation is due to nonequilibrium spin injection between the structure components. By estimates, the injection can lead to inverted population of the spin subbands. The radiation power exceeds by orders of magnitude the thermal background (with the Joule heating taking into account) and follows the current without inertia. △ Less

Submitted 29 January, 2011; originally announced January 2011.

Comments: 8 pages, 5 figures

Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures

Authors: S. G. Chigarev, E. M. Epshtein, I. V. Malikov, G. M. Mikhailov, P. E. Zilberman

Abstract: A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magneti… ▽ More A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching. △ Less

Submitted 18 December, 2010; originally announced December 2010.

Comments: 7 pages, 3 figures

Spintronics of metal ferromagnetic structures: New approaches in the theory and experiments

Authors: S. G. Chigarev, E. M. Epshtein, Yu. V. Gulyaev, P. E. Zilberman

Abstract: Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal spins with magnetization. We show the longitudinal channel leads to a number of significant effects: 1) drastic lowering of the current instability threshold down t… ▽ More Two channels of the sd exchange interaction are considered in magnetic junctions. The first channel describes the interaction of transversal spins with the lattice magnetization. The second one describes the interaction of longitudinal spins with magnetization. We show the longitudinal channel leads to a number of significant effects: 1) drastic lowering of the current instability threshold down to three (or even more) orders of magnitude; 2) creation of large enough distortion of equilibrium due to current driven spin injection leading to inversion of energy spin subband populations and laser-like instability in THz frequency range at room temperature. External magnetic field may tend to lower additionally the instability threshold due to the proximity effect of purely magnetic reorientation phase transition. This effect demonstrates the new properties: the giant magnetoresistance (GMR) becomes strongly current dependent and the exchange switching becomes of very low threshold. We derived some matching condition that should be satisfied to achieve high spin injection level. Some characteristic quantities were appeared in the condition. We investigated also the junctions having variable lateral dimensions of the layers, for example, a ferromagnetic rod contacting with a very thin ferromagnetic film. Large enhancement of the current density may appear near the contact region leading to the spin injection luminescence. △ Less

Submitted 21 October, 2010; originally announced October 2010.

Comments: 13 pages, 7 figures

Switching magnetic junction by joint action of current pulse and magnetic field: Numerical simulation

Authors: S. G. Chigarev, E. M. Epshtein, Yu. V. Gulyaev, P. E. Zilberman

Abstract: The results are presented of a numerical simulation of the switching magnetic junction by a spin-polarized current pulse under applied magnetic field with the current density and field below the threshold values. A possibility is shown of the switching with controllable time delay relative to the current pulse. The results are presented of a numerical simulation of the switching magnetic junction by a spin-polarized current pulse under applied magnetic field with the current density and field below the threshold values. A possibility is shown of the switching with controllable time delay relative to the current pulse. △ Less

Submitted 22 July, 2010; originally announced July 2010.

Comments: 7 pages, 3 figures

Current-induced exchange switching magnetic junctions with cubic anisotropy of the free layer

Authors: S. G. Chigarev, E. M. Epshtein, Yu. V. Gulyaev, P. E. Zilberman

Abstract: The stability is analyzed of the equilibrium configurations of a magnetic junction with a free layer that has cubic symmetry and two anisotropy axes in the layer plane. Different variants of the switching between various configurations are considered. A possibility is shown of the substantial lowering of the threshold current density needed for the switching. Numerical simulation is made of the sw… ▽ More The stability is analyzed of the equilibrium configurations of a magnetic junction with a free layer that has cubic symmetry and two anisotropy axes in the layer plane. Different variants of the switching between various configurations are considered. A possibility is shown of the substantial lowering of the threshold current density needed for the switching. Numerical simulation is made of the switching dynamics for various configurations. △ Less

Submitted 13 July, 2010; originally announced July 2010.

Comments: 14 pages, 7 figures

Spin-polarized current in ferromagnetic rod-to-film structure

Authors: S. G. Chigarev, E. M. Epshtein, Yu. V. Gulyaev, P. E. Zilberman

Abstract: Properties are discussed of a ferromagnetic junction of the type "rod contacting with film". Very high current density of the order of $10^9$ A/cm$^2$ may be achieved in the contact region. We show it can lead to inversion of population of the spin energy subbands. Spin injection depends strongly on the direction of the current (forward or backward). We prepared experimentally a rod-to-film struct… ▽ More Properties are discussed of a ferromagnetic junction of the type "rod contacting with film". Very high current density of the order of $10^9$ A/cm$^2$ may be achieved in the contact region. We show it can lead to inversion of population of the spin energy subbands. Spin injection depends strongly on the direction of the current (forward or backward). We prepared experimentally a rod-to-film structure and investigated high density current flowing through it. Current dependent radiation has been observed by means of a THz receiver. In particular, the radiation becomes different for forward and backward currents. It shows the radiation includes not only heating but also non-thermal (spin-injection) effects. △ Less

Submitted 10 May, 2010; v1 submitted 29 April, 2010; originally announced April 2010.

Comments: 10 pages, 9 figures

Current-driven spin injection from a probe to a ferromagnetic film

Authors: S. G. Chigarev, E. M. Epshtein, Yu. V. Gulyaev, A. I. Panas, V. G. Shofman, P. E. Zilberman

Abstract: The distribution is calculated of the electron spin polarization under current-driven spin injection from a probe to a ferromagnetic film. It is shown that the main parameters determining difference of the spin polarization from the equilibrium value are the current density and the spin polarization of the probe material, while the relation between the probe diameter and the spin diffusion lengt… ▽ More The distribution is calculated of the electron spin polarization under current-driven spin injection from a probe to a ferromagnetic film. It is shown that the main parameters determining difference of the spin polarization from the equilibrium value are the current density and the spin polarization of the probe material, while the relation between the probe diameter and the spin diffusion length influences the result very weakly, to a certain extent. A possibility is shown of reaching inverse population of the spin subbands at distances from the probe boundary comparable with the spin diffusion length. △ Less

Submitted 14 December, 2009; originally announced December 2009.

Comments: 8 pages, 2 figures

Tunnel magnetoresistance of magnetic junctions with cubic symmetry of the layers

Authors: S. G. Chigarev, E. M. Epshtein, P. E. Zilberman

Abstract: A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching is analyzed of the layers by a magnetic field perpendicular to the initial magnetizations. In such a situation, an additional peak of the TMR ratio appears at the magnetic field value lower substantially than the anisotropy energy of the soft layer. A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching is analyzed of the layers by a magnetic field perpendicular to the initial magnetizations. In such a situation, an additional peak of the TMR ratio appears at the magnetic field value lower substantially than the anisotropy energy of the soft layer. △ Less

Submitted 10 August, 2009; originally announced August 2009.

Comments: 7 pages, 3 figures

Lower current-driven exchange switching threshold in noncollinear magnetic junctions under high spin injection

Authors: S. G. Chigarev, E. M. Epshtein, P. E. Zilberman

Abstract: Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization reversal threshold can be lowered up to two times when the axes of the layers are noncollinear. Current-induced switching is considered in a magnetic junction. The junction includes pinned and free ferromagnetic layers which work in the regime of the high spin injection. It is shown that in such a regime the exchange magnetization reversal threshold can be lowered up to two times when the axes of the layers are noncollinear. △ Less

Submitted 30 March, 2009; originally announced March 2009.

Comments: 5 pages, 1 figure