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High-performance and reliable probabilistic Ising machine based on simulated quantum annealing
Authors:
Eleonora Raimondo,
Esteban Garzón,
Yixin Shao,
Andrea Grimaldi,
Stefano Chiappini,
Riccardo Tomasello,
Noraica Davila-Melendez,
Jordan A. Katine,
Mario Carpentieri,
Massimo Chiappini,
Marco Lanuzza,
Pedram Khalili Amiri,
Giovanni Finocchio
Abstract:
Probabilistic computing with pbits is emerging as a computational paradigm for machine learning and for facing combinatorial optimization problems (COPs) with the so-called probabilistic Ising machines (PIMs). From a hardware point of view, the key elements that characterize a PIM are the random number generation, the nonlinearity, the network of coupled pbits, and the energy minimization algorith…
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Probabilistic computing with pbits is emerging as a computational paradigm for machine learning and for facing combinatorial optimization problems (COPs) with the so-called probabilistic Ising machines (PIMs). From a hardware point of view, the key elements that characterize a PIM are the random number generation, the nonlinearity, the network of coupled pbits, and the energy minimization algorithm. Regarding the latter, in this work we show that PIMs using the simulated quantum annealing (SQA) schedule exhibit better performance as compared to simulated annealing and parallel tempering in solving a number of COPs, such as maximum satisfiability problems, planted Ising problem, and travelling salesman problem. Additionally, we design and simulate the architecture of a fully connected CMOS based PIM able to run the SQA algorithm having a spin-update time of 8 ns with a power consumption of 0.22 mW. Our results also show that SQA increases the reliability and the scalability of PIMs by compensating for device variability at an algorithmic level enabling the development of their implementation combining CMOS with different technologies such as spintronics. This work shows that the characteristics of the SQA are hardware agnostic and can be applied in the co-design of any hybrid analog digital Ising machine implementation. Our results open a promising direction for the implementation of a new generation of reliable and scalable PIMs.
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Submitted 17 March, 2025;
originally announced March 2025.
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Spintronics-compatible approach to solving maximum satisfiability problems with probabilistic computing, invertible logic and parallel tempering
Authors:
Andrea Grimaldi,
Luis Sánchez-Tejerina1,
Navid Anjum Aadit,
Stefano Chiappini,
Mario Carpentieri,
Kerem Camsari,
Giovanni Finocchio
Abstract:
The search of hardware-compatible strategies for solving NP-hard combinatorial optimization problems (COPs) is an important challenge of today s computing research because of their wide range of applications in real world optimization problems. Here, we introduce an unconventional scalable approach to face maximum satisfiability problems (Max-SAT) which combines probabilistic computing with p-bits…
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The search of hardware-compatible strategies for solving NP-hard combinatorial optimization problems (COPs) is an important challenge of today s computing research because of their wide range of applications in real world optimization problems. Here, we introduce an unconventional scalable approach to face maximum satisfiability problems (Max-SAT) which combines probabilistic computing with p-bits, parallel tempering, and the concept of invertible logic gates. We theoretically show the spintronic implementation of this approach based on a coupled set of Landau-Lifshitz-Gilbert equations, showing a potential path for energy efficient and very fast (p-bits exhibiting ns time scale switching) architecture for the solution of COPs. The algorithm is benchmarked with hard Max-SAT instances from the 2016 Max-SAT competition (e.g., HG-4SAT-V150-C1350-1.cnf which can be described with 2851 p-bits), including weighted Max-SAT and Max-Cut problems.
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Submitted 30 January, 2022;
originally announced January 2022.
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Magnetization Reversal Signatures of Hybrid and Pure Néel Skyrmions in Thin Film Multilayers
Authors:
Nghiep Khoan Duong,
Riccardo Tomasello,
M. Raju,
Alexander P. Petrović,
Stefano Chiappini,
Giovanni Finocchio,
Christos Panagopoulos
Abstract:
We report a study of the magnetization reversals and skyrmion configurations in two systems - Pt/Co/MgO and Ir/Fe/Co/Pt multilayers, where magnetic skyrmions are stabilized by a combination of dipolar and Dzyaloshinskii-Moriya interactions (DMI). First Order Reversal Curve (FORC) diagrams of low-DMI Pt/Co/MgO and high-DMI Ir/Fe/Co/Pt exhibit stark differences, which are identified by micromagnetic…
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We report a study of the magnetization reversals and skyrmion configurations in two systems - Pt/Co/MgO and Ir/Fe/Co/Pt multilayers, where magnetic skyrmions are stabilized by a combination of dipolar and Dzyaloshinskii-Moriya interactions (DMI). First Order Reversal Curve (FORC) diagrams of low-DMI Pt/Co/MgO and high-DMI Ir/Fe/Co/Pt exhibit stark differences, which are identified by micromagnetic simulations to be indicative of hybrid and pure Néel skyrmions, respectively. Tracking the evolution of FORC features in multilayers with dipolar interactions and DMI, we find that the negative FORC valley, typically accompanying the positive FORC peak near saturation, disappears under both reduced dipolar interactions and enhanced DMI. As these conditions favor the formation of pure Neel skyrmions, we propose that the resultant FORC feature - a single positive FORC peak near saturation - can act as a fingerprint for pure Néel skyrmions in multilayers. Our study thus expands on the utility of FORC analysis as a tool for characterizing spin topology in multilayer thin films.
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Submitted 26 March, 2021;
originally announced March 2021.
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Spin-orbit torque based physical unclonable function
Authors:
G. Finocchio,
T. Moriyama,
R. De Rose,
G. Siracusano,
M. Lanuzza,
V. Puliafito,
S. Chiappini,
F. Crupi,
Z. Zeng,
T. Ono,
M. Carpentieri
Abstract:
This paper introduces the concept of spin-orbit-torque-MRAM (SOT-MRAM) based physical unclonable function (PUF). The secret of the PUF is stored into a random state of a matrix of perpendicular SOT-MRAMs. Here, we show experimentally and with micromagnetic simulations that this random state is driven by the intrinsic nonlinear dynamics of the free layer of the memory excited by the SOT. In detail,…
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This paper introduces the concept of spin-orbit-torque-MRAM (SOT-MRAM) based physical unclonable function (PUF). The secret of the PUF is stored into a random state of a matrix of perpendicular SOT-MRAMs. Here, we show experimentally and with micromagnetic simulations that this random state is driven by the intrinsic nonlinear dynamics of the free layer of the memory excited by the SOT. In detail, a large enough current drives the magnetization along an in-plane direction. Once the current is removed, the in-plane magnetic state becomes unstable evolving towards one of the two perpendicular stable configurations randomly. In addition, an hybrid CMOS/spintronics model is used to evaluate the electrical characteristics of a PUF realized with an array of 16x16 SOT-MRAM cells. Beyond robustness against voltage and temperature variations, hardware authentication based on this PUF scheme has additional advantages over other PUF technologies such as non-volatility (no power consumption in standby mode), reconfigurability (the secret can be rewritten), and scalability. We believe that this work is a step forward the design of spintronic devices for application in security.
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Submitted 28 October, 2019;
originally announced October 2019.
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Micromagnetic understanding of the skyrmion Hall angle current dependence in perpendicular magnetized ferromagnets
Authors:
Riccardo Tomasello,
Anna Giordano,
Stefano Chiappini,
Roberto Zivieri,
Giulio Siracusano,
Vito Puliafito,
Israa Medlej,
Aurelio La Corte,
Bruno Azzerboni,
Mario Carpentieri,
Zhongming Zeng,
Giovanni Finocchio
Abstract:
The understanding of the dynamical properties of skyrmion is a fundamental aspect for the realization of a competitive skyrmion based technology beyond CMOS. Most of the theoretical approaches are based on the approximation of a rigid skyrmion. However, thermal fluctuations can drive a continuous change of the skyrmion size via the excitation of thermal modes. Here, by taking advantage of the Hilb…
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The understanding of the dynamical properties of skyrmion is a fundamental aspect for the realization of a competitive skyrmion based technology beyond CMOS. Most of the theoretical approaches are based on the approximation of a rigid skyrmion. However, thermal fluctuations can drive a continuous change of the skyrmion size via the excitation of thermal modes. Here, by taking advantage of the Hilbert-Huang transform, we demonstrate that at least two thermal modes can be excited which are non-stationary in time. In addition, one limit of the rigid skyrmion approximation is that this hypothesis does not allow for correctly describing the recent experimental evidence of skyrmion Hall angle dependence on the amplitude of the driving force, which is proportional to the injected current. In this work, we show that, in an ideal sample, the combined effect of field-like and damping-like torques on a breathing skyrmion can indeed give rise to such a current dependent skyrmion Hall angle. While here we design and control the breathing mode of the skyrmion, our results can be linked to the experiments by considering that the thermal fluctuations and/or disorder can excite the breathing mode. We also propose an experiment to validate our findings.
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Submitted 4 August, 2018;
originally announced August 2018.
