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Influence of Structural Defects on Charge Density Waves in 1T-TaS2
Authors:
I. Lutsyk,
K. Szalowski,
P. Krukowski,
P. Dabrowski,
M. Rogala,
W. Kozlowski,
M. Le Ster,
M. Piskorski,
D. A. Kowalczyk,
W. Rys,
R. Dunal,
A. Nadolska,
K. Toczek,
P. Przybysz,
E. Lacinska,
J. Binder,
A. Wysmolek,
N. Olszowska,
J. J. Kolodziej,
M. Gmitra,
T. Hattori,
Y. Kuwahara,
G. Bian,
T. -C. Chiang,
P. J. Kowalczyk
Abstract:
The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectivel…
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The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectively behaves as a dopant, leading to band bending and affecting multiple neighboring sites. While only one type of defect can be observed by STM topographic imaging, all defects are easily resolved by local density of states (LDOS) mapping with STS. We correlate atomically-resolved STM periodicity of defect-free 1T-TaS2 to top sulfur atoms and introduce tiling of the surface using equiangular hexagon. DFT calculations (with included Coulomb interactions) are used to investigate the electronic structure by introducing sulfur vacancy or substituting sulfur with oxygen. The sulfur vacancy is characterized by metallic properties and is identified as an origin of one of observed experimentally defects. Whereas in the case of the latter, the oxidation of 1T-TaS2 is found to result in the loss of magnetic properties expected in defect-free material.
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Submitted 1 March, 2023;
originally announced March 2023.
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Dimensional crossover and symmetry transformation of the charge density waves in VSe2
Authors:
P. Chen,
Y. -H. Chan,
R. -Y. Liu,
H. T. Zhang,
Q. Gao,
A. -V. Fedorov,
M. Y. Chou,
T. -C. Chiang
Abstract:
Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe2, which shows a (r7 x r3) charge density wave (CDW) in the single layer with the three-fold symmetry in the normal phase spontaneously broken, in contrast to the (4 x 4) in-plane CDW in the bulk. Angle-resolved photoemission spectroscopy (ARPES) from VSe2 ranging from a single lay…
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Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe2, which shows a (r7 x r3) charge density wave (CDW) in the single layer with the three-fold symmetry in the normal phase spontaneously broken, in contrast to the (4 x 4) in-plane CDW in the bulk. Angle-resolved photoemission spectroscopy (ARPES) from VSe2 ranging from a single layer to the bulk reveals the evolution of the electronic structure including the Fermi surface contours and the CDW gap. At a thickness of two layers, the ARPES maps are already nearly bulklike, but the transition temperature TC for the (4 x 4) CDW is much higher than the bulk value of 110 K. These results can be understood as a result of dimensional crossover of phonon instability driven by a competition of nesting vectors. Our study provides key insights into the CDW mechanisms and offers a perspective in the search and control of emergent phases in quantum materials.
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Submitted 20 February, 2023;
originally announced February 2023.
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Massive suppression of proximity pairing in topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on niobium
Authors:
Joseph A. Hlevyack,
Sahand Najafzadeh,
Meng-Kai Lin,
Takahiro Hashimoto,
Tsubaki Nagashima,
Akihiro Tsuzuki,
Akiko Fukushima,
Cédric Bareille,
Yang Bai,
Peng Chen,
Ro-Ya Liu,
Yao Li,
David Flötotto,
José Avila,
James N. Eckstein,
Shik Shin,
Kozo Okazaki,
T. -C. Chiang
Abstract:
Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evid…
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Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evidenced by ultrahigh-resolution band mappings and by contrasting quantified superconducting gaps with those of heavily n-doped topological Bi$_2$Se$_3$/Nb. The results underscore the limitations of using superconducting proximity effects to realize topological superconductivity in nearly intrinsic systems.
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Submitted 2 June, 2020;
originally announced June 2020.
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Comment on "Chiral Phase Transition in Charge Ordered 1T-TiSe2" and Supplementary Material on "First-order Forbidden X-ray Diffraction"
Authors:
Meng-Kai Lin,
Joseph A. Hlevyack,
Peng Chen,
Ro-Ya Liu,
T. -C. Chiang
Abstract:
A prior report of the emergence of chirality for the (2x2x2) charge density wave (CDW) in TiSe2 has attracted much interest; the drastic symmetry breaking is highly unusual with few precedents [1]. In that study, key evidence was provided by x-ray diffraction measurements of two superlattice reflections, (1.5 1.5 0.5) and (2.5 1 0). The (2.5 1 0) reflection appeared to show an anomalously large in…
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A prior report of the emergence of chirality for the (2x2x2) charge density wave (CDW) in TiSe2 has attracted much interest; the drastic symmetry breaking is highly unusual with few precedents [1]. In that study, key evidence was provided by x-ray diffraction measurements of two superlattice reflections, (1.5 1.5 0.5) and (2.5 1 0). The (2.5 1 0) reflection appeared to show an anomalously large intensity and a transition onset at ~7 K below that of the (1.5 1.5 0.5) reflection. These observations, aided by modeling, were cited as evidence for a separate chiral transition. In this Comment, we show that the prior conclusions based on x-ray diffraction are erroneous. There is just one transition, and it is achiral.
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Submitted 13 May, 2019; v1 submitted 26 March, 2019;
originally announced March 2019.
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Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms
Authors:
S. Ito,
M. Arita,
J. Haruyama,
B. Feng,
W. -C. Chen,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
G. Bian,
S. -J. Tang,
T. -C. Chiang,
O. Sugino,
F. Komori,
I. Matsuda
Abstract:
The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we…
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The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.
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Submitted 30 January, 2020; v1 submitted 16 March, 2019;
originally announced March 2019.
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Unique gap structure and symmetry of the charge density wave in single-layer VSe$_2$
Authors:
P. Chen,
W. -W. Pai,
Y. -H. Chan,
V. Madhavan,
M. Y. Chou,
S. -K. Mo,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projection of the corresponding bulk CDWs because of the quasi-two-dimensional nature of TMDCs; a different C…
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Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projection of the corresponding bulk CDWs because of the quasi-two-dimensional nature of TMDCs; a different CDW symmetry is unexpected. We report herein the successful creation of pristine single-layer VSe$_2$, which shows a ($\sqrt7 \times \sqrt3$) CDW in contrast to the (4 $\times$ 4) CDW for the layers in bulk VSe$_2$. Angle-resolved photoemission spectroscopy (ARPES) from the single layer shows a sizable ($\sqrt7 \times \sqrt3$) CDW gap of $\sim$100 meV at the zone boundary, a 220 K CDW transition temperature twice the bulk value, and no ferromagnetic exchange splitting as predicted by theory. This robust CDW with an exotic broken symmetry as the ground state is explained via a first-principles analysis. The results illustrate a unique CDW phenomenon in the two-dimensional limit.
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Submitted 14 November, 2018;
originally announced November 2018.
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Quantum-spin-Hall insulator with a large gap: single-layer 1T' WSe$_2$
Authors:
P. Chen,
W. -W. Pai,
Y. -H. Chan,
W. -L. Sun,
C. -Z. Xu,
D. -S. Lin,
M. Y. Chou,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe$_2$ single layer with th…
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Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe$_2$ single layer with the 1T' structure that does not exist in the bulk form of WSe$_2$. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observed a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.
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Submitted 21 May, 2018;
originally announced May 2018.
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Emergence of charge density waves and a pseudogap in single-layer TiTe2
Authors:
P. Chen,
Woei Wu Pai,
Y. -H. Chan,
A. Takayama,
C. -Z. Xu,
A. Karn,
S. Hasegawa,
M. Y. Chou,
S. -K. Mo,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Two-dimensional materials constitute a promising platform for developing nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe$_2$ from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscop…
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Two-dimensional materials constitute a promising platform for developing nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe$_2$ from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscopy and scanning tunneling microscopy and spectroscopy, we observed the emergence of a (2 x 2) charge density wave order in single-layer TiTe$_2$ with a transition temperature of 92 $\pm$ 3 K. Also observed was a pseudogap of about 28 meV at the Fermi level at 4.2 K. Surprisingly, no charge density wave transitions were observed in 2- and multi-layer TiTe$_2$, despite the quasi-two-dimensional nature of the material in the bulk. The unique charge density wave phenomenon in the single layer raises intriguing questions that challenge the prevailing thinking about the mechanisms of charge density wave formation.
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Submitted 14 May, 2018;
originally announced May 2018.
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Band Topology and Dichroic Signature of Bismuth
Authors:
Guang Bian,
Tay-Rong Chang,
Xiaoxiong Wang,
Hsin Lin,
T. Miller,
T. -C. Chiang
Abstract:
Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi. To…
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Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi. To address this issue, we study the band structure of Bi and Sb films by ARPES and first-principles calculations. By tuning tight binding parameters, we show that Bi quantum films in topologically trivial and nontrivial phases response differently to surface perturbations. Therefore, we establish an experimental route for detecting the band topology of Bi by spectroscopic methods. In addition, our circular dichroic photoemission illuminates the rich surface states and complex spin texture of the Bi(111) surface.
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Submitted 2 October, 2017;
originally announced October 2017.
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Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in Ultrathin Bi2Te3 Films
Authors:
C. -Z. Xu,
Y. Liu,
R. Yukawa,
L. -X. Zhang,
I. Matsuda,
T. Miller,
T. -C. Chiang
Abstract:
Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit)…
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Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit) to twelve layers (bulk limit) over a wide range of incident photon energy. The data show complex variations in magnitude and sign reversals, which are nevertheless well described by a theoretical calculation including all three photoemission mechanisms: dipole transition, surface photoemission, and spin-orbit coupling. The results establish the nontrivial connection between the spin-orbit texture and CD.
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Submitted 26 May, 2017;
originally announced May 2017.
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Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement
Authors:
S. Ito,
B. Feng,
M. Arita,
A. Takayama,
R. -Y. Liu,
T. Someya,
W. -C. Chen,
T. Iimori,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
S. -J. Tang,
F. Komori,
K. Kobayashi,
T. -C. Chiang,
I. Matsuda
Abstract:
The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave…
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The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.
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Submitted 3 December, 2016; v1 submitted 11 May, 2016;
originally announced May 2016.
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Direct Transition Resonance in Atomically Uniform Topological Sb(111) Thin Films
Authors:
Guang Bian,
Caizhi Xu,
Tay-Rong Chang,
Xiaoxiong Wang,
Saavanth Velury,
Jie Ren,
Hao Zheng,
Horng-Tay Jeng,
T. Miller,
M. Zahid Hasan,
T. -C. Chiang
Abstract:
Atomically uniform Sb(111) films are fabricated by the method of molecular beam epitaxy on an optimized Si(111) surface. Two dimensional quantum well states and topological surface states in these films are well resolved as measured by angle-resolved photoemission spectroscopy. We observe an evolution of direct transition resonances by varying the excitation photon energy (and thus the perpendicul…
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Atomically uniform Sb(111) films are fabricated by the method of molecular beam epitaxy on an optimized Si(111) surface. Two dimensional quantum well states and topological surface states in these films are well resolved as measured by angle-resolved photoemission spectroscopy. We observe an evolution of direct transition resonances by varying the excitation photon energy (and thus the perpendicular crystal momentum). The experimental results are reproduced in a comprehensive model calculation taking into account first-principles calculated initial states and time-reversed low-energy-electron-diffraction final states in the photoexcitation process. The resonant behavior illustrates that the topological surface states and the quantum well states are analytically connected in momentum space in all three dimensions.
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Submitted 7 November, 2015;
originally announced November 2015.
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Engineering electronic structure of a 2D topological insulator Bi(111) bilayer on Sb nanofilms by quantum confinement effect
Authors:
Guang Bian,
Z. F. Wang,
Xiaoxiong Wang,
Caizhi Xu,
Su-Yang Xu,
T. Miller,
M. Zahid Hasan,
Feng Liu,
T. -C. Chiang
Abstract:
We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron…
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We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron gas within the top Bi bilayer. Interestingly, Our first-principles calculation extrapolating the observed band structure shows that, by tuning down the thickness of the supporting Sb films into the quantum dimension regime, a pair of isolated topological edge states emerges in a partial energy gap at 0.32 eV above the Fermi level as a consequence of quantum confinement effect. Our results and methodology of fabricating nanoscale heterostructures establish the Bi bilayer/Sb heterostructure as a platform of great potential for both ultralow-energy-cost electronics and surface-based spintronics.
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Submitted 7 November, 2015;
originally announced November 2015.
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Surface collective modes in the topological insulators Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3-x}$Se$_{x}$
Authors:
A. Kogar,
S. Vig,
A. Thaler,
M. H. Wong,
Y. Xiao,
D. Reig-i-Plessis,
G. Y. Cho,
T. Valla,
Z. Pan,
J. Schneeloch,
R. Zhong,
G. Gu,
T. L. Hughes,
G. J. MacDougall,
T. -C. Chiang,
P. Abbamonte
Abstract:
We used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3-x}$Se$_{x}$. Our goal was to identify the "spin plasmon" predicted by Raghu and co-workers [S. Raghu, et al., Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a su…
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We used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3-x}$Se$_{x}$. Our goal was to identify the "spin plasmon" predicted by Raghu and co-workers [S. Raghu, et al., Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carrers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface, $χ"(\textbf{q},ω)$, at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.
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Submitted 16 December, 2015; v1 submitted 14 May, 2015;
originally announced May 2015.
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Quantum Melting of the Charge Density Wave State in 1T-TiSe2
Authors:
C. S. Snow,
J. F. Karpus,
S. L. Cooper,
T. E. Kidd,
T. -C. Chiang
Abstract:
We report a Raman scattering study of low-temperature, pressure-induced melting of the CDW phase of 1T-TiSe2. Our Raman scattering measurements reveal that the collapse of the CDW state occurs in three stages: (i) For P<5 kbar, the pressure dependence of the CDW amplitude mode energies and intensities are indicative of a ``crystalline'' CDW regime; (ii) for 5 < P < 25 kbar, there is a decrease i…
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We report a Raman scattering study of low-temperature, pressure-induced melting of the CDW phase of 1T-TiSe2. Our Raman scattering measurements reveal that the collapse of the CDW state occurs in three stages: (i) For P<5 kbar, the pressure dependence of the CDW amplitude mode energies and intensities are indicative of a ``crystalline'' CDW regime; (ii) for 5 < P < 25 kbar, there is a decrease in the CDW amplitude mode energies and intensities with increasing pressure that suggests a regime in which the CDW softens, and may decouple from the lattice; and (iii) for P>25 kbar, the absence of amplitude modes reveals a melted CDW regime.
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Submitted 11 April, 2003;
originally announced April 2003.
