Quantum-Ready Microwave Detection with Scalable Graphene Bolometers in the Strong Localization Regime
Authors:
Yu-Cheng Chang,
Federico Chianese,
Naveen Shetty,
Johanna Huhtasaari,
Aditya Jayaraman,
Joonas T. Peltonen,
Samuel Lara-Avila,
Bayan Karimi,
Andrey Danilov,
Jukka P. Pekola,
Sergey Kubatkin
Abstract:
Exploiting quantum interference of charge carriers, epitaxial graphene grown on silicon carbide emerges as a game-changing platform for ultra-sensitive bolometric sensing, featuring an intrinsic resistive thermometer response unmatched by any other graphene variant. By achieving low and uniform carrier densities, we have accessed a new regime of strong charge localization that dramatically reduces…
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Exploiting quantum interference of charge carriers, epitaxial graphene grown on silicon carbide emerges as a game-changing platform for ultra-sensitive bolometric sensing, featuring an intrinsic resistive thermometer response unmatched by any other graphene variant. By achieving low and uniform carrier densities, we have accessed a new regime of strong charge localization that dramatically reduces thermal conductance, significantly enhancing bolometer performance. Here we present scalable graphene-based bolometers engineered for detecting GHz-range photons, a frequency domain essential for superconducting quantum processors. Our devices deliver a state-of-the-art noise equivalent power of 40 zW$/\sqrt{\rm Hz}$ at $T=40~$mK, enabled by the steep temperature dependence of thermal conductance, $G_{\rm th}\sim T^4$ for $T<100~$mK. These results establish epitaxial graphene bolometers as versatile and low-back-action detectors, unlocking new possibilities for next-generation quantum processors and pioneering investigations into the thermodynamics and thermalization pathways of strongly entangled quantum systems.
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Submitted 9 June, 2025; v1 submitted 30 May, 2025;
originally announced May 2025.
Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes
Authors:
F. Chianese,
A. Candini,
M. Affronte,
N. Mishra,
C. Coletti,
A. Cassinese
Abstract:
In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough comparison with short channel transistors made with reference gold electrodes, we found that the output characteristics of the graphene-based devices respond lin…
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In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough comparison with short channel transistors made with reference gold electrodes, we found that the output characteristics of the graphene-based devices respond linearly to the applied biases, in contrast with the supra-linear trend of gold-based transistors. Moreover, short channel effects are considerably suppressed in graphene electrodes devices. More specifically, current on/off ratios independent of the channel length (L) and enhanced response for high longitudinal biases are demonstrated for L down to ~140 nm. These results are rationalized taking into account the morphological and electronic characteristics of graphene, showing that the use of graphene electrodes may help to overcome the problem of Space Charge Limited Current (SCLC) in short channel OFETs.
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Submitted 30 October, 2018;
originally announced October 2018.
