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Gate tunable spin-charge interconversion in a graphene/ReS$_{2}$ heterostructure up to room temperature
Authors:
Eoin Dolan,
Zhendong Chi,
Haozhe Yang,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also limits the capacity for manipulating spin current. A key strategy to address this limitation is to induce SOC in graphene via proximity to other two-dimensional (…
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Graphene is a material with great potential in the field of spintronics, combining good conductivity with low spin--orbit coupling (SOC), which allows for the transport of spin currents over long distances. However, this lack of SOC also limits the capacity for manipulating spin current. A key strategy to address this limitation is to induce SOC in graphene via proximity to other two-dimensional (2D) materials. Such proximity-induced SOC can enable spin--charge interconversion (SCI) in graphene, with potential applications in next-generation logic devices. Here, we place graphene in close proximity to the room-temperature ferroelectric candidate ReS$_\mathrm{2}$, inducing SCI for both in-plane and out-of-plane polarized spin current. We attribute the SCI for in-plane polarized current to either the Rashba--Edelstein effect (REE) or the unconventional spin Hall effect (SHE) at the graphene/ReS$_\mathrm{2}$ interface, and the SCI for out-of-plane polarized current to either the conventional SHE in the proximitised graphene, or the unconventional SHE in the bulk of the ReS$_\mathrm{2}$. SCI due to in-plane spin is characterised over a wide range of temperature, up to 300 K and a range of gate voltages.
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Submitted 18 August, 2025; v1 submitted 11 August, 2025;
originally announced August 2025.
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Electron beam irradiation-induced transport and recombination in p-type Gallium Oxide grown on (001) \b{eta}-Ga2O3 substrate
Authors:
Gabriel Marciaga,
Jian-Sian Li,
Chao-Ching Chiang,
Fan Ren,
Stephen J. Pearton,
Corinne Sartel,
Zeyu Chi,
Yves Dumont,
Ekaterine Chikoidze,
Alfons Schulte,
Arie Ruzin,
Leonid Chernyak
Abstract:
This study investigates minority electron diffusion length and carrier recombination phenomena within p-type, 300 nm-thick Ga2O3 epitaxial films. Utilizing Electron Beam-Induced Current (EBIC) and Cathodoluminescence (CL) spectroscopy, these characteristics were examined as a function of both temperature and the duration of electron beam excitation. While the electron diffusion length in these p-G…
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This study investigates minority electron diffusion length and carrier recombination phenomena within p-type, 300 nm-thick Ga2O3 epitaxial films. Utilizing Electron Beam-Induced Current (EBIC) and Cathodoluminescence (CL) spectroscopy, these characteristics were examined as a function of both temperature and the duration of electron beam excitation. While the electron diffusion length in these p-Ga2O3 films diminish with increasing temperature, a continuous electron beam excitation of a particular location on the surface of a p-Ga2O3 epitaxial layer leads to an elongation of the diffusion length. and decay of cathodoluminescence intensity in that location under beam exposure. These latter two effects are attributed to non-equilibrium electrons, generated by an electron beam, being captured at acceptor-related point defect levels in Gallium Oxide. The activation energies characterizing these processes were obtained from the independent EBIC and CL experiments to garner insight into defect landscape and its influence on transport and recombination dynamics.
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Submitted 20 June, 2025;
originally announced June 2025.
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Fe contribution to the magnetic anisotropy of $L{1_0}$-ordered FePt thin films studied by angle-dependent x-ray magnetic circular dichroism
Authors:
Goro Shibata,
Keisuke Ikeda,
Takeshi Seki,
Shoya Sakamoto,
Yosuke Nonaka,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Tsuneharu Koide,
Hiroki Wadati,
Koki Takanashi,
Atsushi Fujimori
Abstract:
Among magnetic thin films with perpendicular magnetic anisotropy (PMA), $L1_0$-ordered FePt has attracted significant attention because of its exceptionally strong PMA. However, the microscopic origin of its strong PMA has not been elucidated experimentally. We have investigated the contribution of the Fe $3d$ electrons to its magnetic anisotropy energy by angle-dependent x-ray magnetic circular d…
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Among magnetic thin films with perpendicular magnetic anisotropy (PMA), $L1_0$-ordered FePt has attracted significant attention because of its exceptionally strong PMA. However, the microscopic origin of its strong PMA has not been elucidated experimentally. We have investigated the contribution of the Fe $3d$ electrons to its magnetic anisotropy energy by angle-dependent x-ray magnetic circular dichroism at the Fe $L_{2,3}$ edge. By this technique, one can deduce the magnetic dipole moment $m_\text{T}$, which represents the anisotropic spatial distribution of spin-polarized electrons, and the orbital moment anisotropy (OMA) of Fe $3d$ electrons. Detected finite $m_\text{T}$ indicates that the spin-polarized Fe $3d$ electrons are distributed preferentially in the out-of-plane direction of the films. This $m_\text{T}$ of Fe overwhelms the positive contribution of OMA to PMA, and reduces the PMA of $L1_0$-ordered FePt thin films, consistent with a previous first-principles calculation. The present result implies that a large positive contribution of the non-magnetic element Pt rather than Fe governs the PMA of $L1_0$-ordered FePt thin films.
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Submitted 30 May, 2025;
originally announced May 2025.
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Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Authors:
Haozhe Yang,
Zhendong Chi,
Garen Avedissian,
Eoin Dolan,
Muthumalai Karuppasamy,
Beatriz Martín-García,
Marco Gobbi,
Zdenek Sofer,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin-orbit coupling materials in close contact to graph…
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Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin-orbit coupling materials in close contact to graphene leading to spin-orbit proximity and, consequently, efficient spin-to-charge conversion through mechanisms such as the spin Hall effect. Here, we report and quantify the gate-dependent spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS), a group-IV monochalcogenide which has recently been predicted to be a viable alternative to transition-metal dichalcogenides for inducing strong spin-orbit coupling in graphene. The spin Hall angle exhibits a maximum around the charge neutrality point of graphene up to room temperature. Our findings expand the library of materials that induce spin-orbit coupling in graphene to a new class, group-IV monochalcogenides, thereby highlighting the potential of two-dimensional materials to pave the way for the development of innovative spin-based devices and future technological applications.
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Submitted 12 December, 2024;
originally announced December 2024.
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Dissipation Driven Coherent Dynamics Observed in Bose-Einstein Condensates
Authors:
Ye Tian,
Yajuan Zhao,
Yue Wu,
Jilai Ye,
Shuyao Mei,
Zhihao Chi,
Tian Tian,
Ce Wang,
Zhe-Yu Shi,
Yu Chen,
Jiazhong Hu,
Hui Zhai,
Wenlan Chen
Abstract:
We report the first experimental observation of dissipation-driven coherent quantum many-body oscillation, and this oscillation is manifested as the coherent exchange of atoms between the thermal and the condensate components in a three-dimensional partially condensed Bose gas. Firstly, we observe that the dissipation leads to two different atom loss rates between the thermal and the condensate co…
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We report the first experimental observation of dissipation-driven coherent quantum many-body oscillation, and this oscillation is manifested as the coherent exchange of atoms between the thermal and the condensate components in a three-dimensional partially condensed Bose gas. Firstly, we observe that the dissipation leads to two different atom loss rates between the thermal and the condensate components, such that the thermal fraction increases as dissipation time increases. Therefore, this dissipation process serves as a tool to uniformly ramp up the system's temperature without introducing extra density excitation. Subsequently, a coherent pair exchange of atoms between the thermal and the condensate components occurs, resulting in coherent oscillation of atom numbers in both components. This oscillation, permanently embedded in the atom loss process, is revealed clearly when we inset a duration of dissipation-free evolution into the entire dynamics, manifested as an oscillation of total atom number at the end. Finally, we also present a theoretical calculation to support this physical mechanism, which simultaneously includes dissipation, interaction, finite temperature, and harmonic trap effects. Our work introduces a highly controllable dissipation as a new tool to control quantum many-body dynamics.
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Submitted 7 August, 2024;
originally announced August 2024.
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A Free Energy Model for the Plateau Shear Modulus in Thermosensitive Microgel Suspensions
Authors:
Maxime Bergman,
Yixuan Xu,
José Muñéton Díaz,
Zhang Chi,
Thomas G. Mason,
Frank Scheffold
Abstract:
Polymer microgels exhibit intriguing macroscopic flow properties arising from their unique microscopic structure. Microgel colloids usually comprise a crosslinked polymer network with a radially decaying density profile, resulting in a dense core surrounded by a fuzzy corona. Notably, microgels synthesized from poly(N-isopropyl acrylamide) (PNIPAM) are thermoresponsive, capable of adjusting their…
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Polymer microgels exhibit intriguing macroscopic flow properties arising from their unique microscopic structure. Microgel colloids usually comprise a crosslinked polymer network with a radially decaying density profile, resulting in a dense core surrounded by a fuzzy corona. Notably, microgels synthesized from poly(N-isopropyl acrylamide) (PNIPAM) are thermoresponsive, capable of adjusting their size and density profile based on temperature. Above the lower critical solution temperature ($T_\text{LCST} \sim 33$ $^\circ$C), the microgel's polymer network collapses, expulsing water through a reversible process. Conversely, below $33$ $^\circ$C, the microgel's network swells, becoming highly compressible and allowing overpacking to effective volume fractions exceeding one. Under conditions of dense packing, microgels undergo deformation in distinct stages: corona compression and faceting, interpenetration, and finally, isotropic compression. Each stage exhibits a characteristic signature in the dense microgel suspensions' yield stress and elastic modulus. Here, we introduce a model for the linear elastic shear modulus by minimizing a quasi-equilibrium free energy, encompassing all relevant energetic contributions. We validate our model by comparing its predictions to experimental results from oscillatory shear rheology tests on microgel suspensions at different densities and temperatures. Our findings demonstrate that combining macroscopic rheological measurements with the model allows for temperature-dependent characterization of polymer interaction parameters.
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Submitted 7 February, 2025; v1 submitted 12 March, 2024;
originally announced March 2024.
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Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves
Authors:
Zhendong Chi,
Seungjun Lee,
Haozhe Yang,
Eoin Dolan,
C. K. Safeer,
Josep Ingla-Aynés,
Franz Herling,
Nerea Ontoso,
Beatriz Martín-García,
Marco Gobbi,
Tony Low,
Luis E. Hueso,
Fèlix Casanova
Abstract:
A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin inte…
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A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS$_2$ van der Waals heterostructures by manipulating the distinct CDW phases in 1T-TaS$_2$. Whereas CSI from spins polarized in all three directions are observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains are at the origin of the switching of CSI. Our results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices.
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Submitted 24 June, 2024; v1 submitted 16 January, 2024;
originally announced January 2024.
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Twist-angle tunable spin texture in WSe$_2$/graphene van der Waals heterostructures
Authors:
Haozhe Yang,
Beatriz Martín-García,
Jozef Kimák,
Eva Schmoranzerová,
Eoin Dolan,
Zhendong Chi,
Marco Gobbi,
Petr Němec,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion…
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Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe$_2$/graphene heterostructures by using spin precession experiments. For specific twist angles, we experimentally detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by angle twisting, highlighting its critical role on the spin-orbit properties of WSe$_2$/graphene heterostructures and paving the way for the development of novel spin-twistronic devices.
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Submitted 15 December, 2023;
originally announced December 2023.
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Observation of universal dissipative dynamics in strongly correlated quantum gas
Authors:
Yajuan Zhao,
Ye Tian,
Jilai Ye,
Yue Wu,
Zihan Zhao,
Zhihao Chi,
Tian Tian,
Hepeng Yao,
Jiazhong Hu,
Yu Chen,
Wenlan Chen
Abstract:
Dissipation is unavoidable in quantum systems. It usually induces decoherences and changes quantum correlations. To access the information of strongly correlated quantum matters, one has to overcome or suppress dissipation to extract out the underlying quantum phenomena. However, here we find an opposite effect that dissipation can be utilized as a powerful tool to probe the intrinsic correlations…
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Dissipation is unavoidable in quantum systems. It usually induces decoherences and changes quantum correlations. To access the information of strongly correlated quantum matters, one has to overcome or suppress dissipation to extract out the underlying quantum phenomena. However, here we find an opposite effect that dissipation can be utilized as a powerful tool to probe the intrinsic correlations of quantum many-body systems. Applying highly-controllable dissipation in ultracold atomic systems, we observe a universal dissipative dynamics in strongly correlated one-dimensional quantum gases. The total particle number of this system follows a universal stretched-exponential decay, and the stretched exponent measures the anomalous dimension of the spectral function, a critical exponent characterizing strong quantum fluctuations of this system. This method could have broad applications in detecting strongly correlated features, including spin-charge separations and Fermi arcs in quantum materials.
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Submitted 18 September, 2023;
originally announced September 2023.
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Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity
Authors:
Zeyu Chi,
Corinne Sartel,
Yunlin Zheng,
Sushrut Modak,
Leonid Chernyak,
Christian M Schaefer,
Jessica Padilla,
Jose Santiso,
Arie Ruzin,
Anne-Marie Goncalves,
Jurgen von Bardeleben,
Gerard Guillot,
Yves Dumont,
Amador Perez-Tomas,
Ekaterine Chikoidze
Abstract:
The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperatu…
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The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperature. A low activation energy of conductivity as Ea2=170 meV was determined, associated to the oxygen - gallium native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV.
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Submitted 1 June, 2023;
originally announced June 2023.
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Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide
Authors:
Haozhe Yang,
Maider Ormaza,
Zhendong Chi,
Eoin Dolan,
Josep Ingla-Aynés,
C. K. Safeer,
Franz Herling,
Nerea Ontoso,
Marco Gobbi,
Beatriz Martin-Garcia,
Frederik Schiller,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin…
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Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin Hall effect. Its efficiency, given by the product of the spin Hall angle and the spin diffusion length, can be tuned with the Fermi level position, exhibiting a maximum (1.8 $\pm$ 0.6 nm at 100 K) around the charge neutrality point. This all-light-element heterostructure shows a larger efficiency than conventional spin Hall materials. The gate-tunable spin Hall effect is observed up to room temperature. Our experimental demonstration provides an efficient spin-to-charge conversion system free from heavy metals and compatible with large-scale fabrication.
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Submitted 20 February, 2024; v1 submitted 2 May, 2023;
originally announced May 2023.
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Origin of magnetically dead layers in spinel ferrites $M\text{Fe}_2\text{O}_4$ grown on $\text{Al}_2\text{O}_3$: Effects of post-deposition annealing studied by XMCD
Authors:
Yosuke Nonaka,
Yuki K. Wakabayashi,
Goro Shibata,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Arata Tanaka,
Masaaki Tanaka,
Atsushi Fujimori
Abstract:
We study the electronic and magnetic states of as-grown and annealed $M\text{Fe}_2\text{O}_4$(111)/$\text{Al}_2\text{O}_3$(111) ($M=\text{Co, Ni}$) thin films with various thicknesses grown on Si(111) substrates with the $γ$-$\text{Al}_2\text{O}_3$(111) buffer layers by using x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD), to investigate magnetically dead layers i…
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We study the electronic and magnetic states of as-grown and annealed $M\text{Fe}_2\text{O}_4$(111)/$\text{Al}_2\text{O}_3$(111) ($M=\text{Co, Ni}$) thin films with various thicknesses grown on Si(111) substrates with the $γ$-$\text{Al}_2\text{O}_3$(111) buffer layers by using x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD), to investigate magnetically dead layers in these films. Although the magnetically dead layers in the as-grown samples are formed near the interface with the $\text{Al}_2\text{O}_3$ buffer layer, we reveal that ferrimagnetic order is partially recovered by post-deposition annealing at 973 K for 48 hours in air. By analyzing the line shapes of the XAS and XMCD spectra, we conclude that, in the dead layers, there are a significant number of vacancies at the $T_d$ sites of the spinel structure, which may be the microscopic origin of the degraded ferrimagnetic order in the $M\text{Fe}_2\text{O}_4$(111) thin films.
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Submitted 5 February, 2023;
originally announced February 2023.
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Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures
Authors:
Nerea Ontoso,
C. K. Safeer,
Franz Herling,
Josep Ingla-Aynés,
Haozhe Yang,
Zhendong Chi,
Iñigo Robredo,
Maia G. Vergniory,
Fernando de Juan,
M. Reyes Calvo,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are those where the spin current, charge current and spin polarization directions are orthogonal to each other. Consequently, standard SCI experiments are designed…
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Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are those where the spin current, charge current and spin polarization directions are orthogonal to each other. Consequently, standard SCI experiments are designed to maximize the signals arising from the SCI processes with conventional mutually orthogonal geometry. However, in low-symmetry materials, certain non-orthogonal SCI processes are also allowed. Since the standard SCI experiment is limited to charge current flowing only in one direction in the SOC material, certain allowed SCI configurations remain unexplored. In this work, we performed a thorough SCI study in a graphene-based lateral spin valve combined with low-symmetry MoTe$_2$. Due to a very low contact resistance between the two materials, we could detect SCI signals using both a standard configuration, where the charge current is applied along the MoTe$_2$, and a recently introduced (3D-current) configuration, where the charge current flow can be controlled in three directions within the heterostructure. As a result, we observed three different SCI components, one orthogonal and two non-orthogonal, giving new insight into the SCI processes in low-symmetry materials. The large SCI signals obtained at room temperature, along with the versatility of the 3D-current configuration, provide feasibility and flexibility to the design of the next generation of spin-based devices.
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Submitted 16 November, 2022;
originally announced November 2022.
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Failure behaviors and processing maps with failure domains for hot compression of a powder metallurgy Ni-based superalloy
Authors:
Zonglin Chi,
Shuai Ren,
Jingbo Qiao,
Jinglong Qu,
Chengbin Yang,
Zhuanye Xie,
Wei Chen,
Hua Zhang,
Liang Jiang,
Shuying Chen,
Fanchao Meng
Abstract:
Processing maps are key to guiding the thermo-mechanical processing (TMP) of superalloys. However, traditional processing maps are incapable of delimiting failure, which is an essential factor to be concerned about during the TMP of superalloys. Employing isothermal hot compression experiments and finite element analysis (FEA), the present study examined the failure behaviors of a powder metallurg…
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Processing maps are key to guiding the thermo-mechanical processing (TMP) of superalloys. However, traditional processing maps are incapable of delimiting failure, which is an essential factor to be concerned about during the TMP of superalloys. Employing isothermal hot compression experiments and finite element analysis (FEA), the present study examined the failure behaviors of a powder metallurgy (P/M) Ni-based superalloy and constructed processing maps with failure domains based on the predicted failure threshold. The micromechanical Gurson-Tvergaard-Needleman (GTN) damage model was employed in the FEA to model the cavity-driven intergranular fracture of the superalloy. Deformation temperature and strain rate were considered in the range of 1050 ~ 1150 C and 0.001 ~ 1 s-1, respectively. The FEA results reveal that the maximum tensile stress locates at the outer budging surfaces of the samples, which causes failure initiation and subsequent propagation into longitudinal cracks, being consistent with the experiments. It is further demonstrated that the failure is strain-controlled and the critical failure strain remains nearly insensitive to the range of strain rates considered while increasing with the increase of temperature in a third-order polynomial. Finally, an optimized processing window for hot deformation of the superalloy is formulated to warrant good hot workability while avoiding flow instability and failure. The present study offers direct insights into the failure behaviors of P/M Ni-based superalloys and details a modeling strategy to delineate optimized parametric spaces for the TMP of superalloys.
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Submitted 22 August, 2022;
originally announced August 2022.
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Evidencing non-Bloch dynamics in temporal topolectrical circuits
Authors:
Maopeng Wu,
Qian Zhao,
Lei Kang,
Mingze Weng,
Zhonghai Chi,
Ruiguang Peng,
Jingquan Liu,
Douglas H. Werner,
Yonggang Meng,
Ji Zhou
Abstract:
One of the core concepts from the non-Hermitian skin effect is the extended complex wavevectors (CW) in the generalized Brillouin zone (GBZ), while the origin of CW remains elusive, and further experimental demonstration of GBZ is still lacking. We show that the bulk states of an open quantum system dynamically governed by the Lindblad master equation exhibit non-Bloch evolution which results in C…
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One of the core concepts from the non-Hermitian skin effect is the extended complex wavevectors (CW) in the generalized Brillouin zone (GBZ), while the origin of CW remains elusive, and further experimental demonstration of GBZ is still lacking. We show that the bulk states of an open quantum system dynamically governed by the Lindblad master equation exhibit non-Bloch evolution which results in CW. Experimentally, we present temporal topolectrical circuits to serve as simulators for the dynamics of an open system. By reconstructing the correspondence between the bulk states of an open system and circuit voltage modes through gauge scale potentials in the circuit, the non-Bloch evolution is demonstrated. Facilitated by the simulators and proper approach to characterize the non-Bloch band proposed here, the GBZ is confirmed. Our work may advance the investigation of the dissipative topological modes and provide a versatile platform for exploring the unique evolution and topology for both closed and open systems.
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Submitted 23 June, 2022;
originally announced June 2022.
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Charge-to-spin conversion in twisted graphene/WSe$_2$ heterostructures
Authors:
Seungjun Lee,
D. J. P. de Sousa,
Young-Kyun Kwon,
Fernando de Juan,
Zhendong Chi,
Fèlix Casanova,
Tony Low
Abstract:
We investigate the twist angle dependence of spin-orbit coupling (SOC) proximity effects and charge-to-spin conversion (CSC) in graphene/WSe$_2$ heterostructures from first principles. The CSC is shown to strongly depend on the twist angle, with both the spin Hall and standard Rashba-Edelstein efficiencies optimized at or near 30° twisting. Symmetry breaking due to twisting also gives rise to an u…
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We investigate the twist angle dependence of spin-orbit coupling (SOC) proximity effects and charge-to-spin conversion (CSC) in graphene/WSe$_2$ heterostructures from first principles. The CSC is shown to strongly depend on the twist angle, with both the spin Hall and standard Rashba-Edelstein efficiencies optimized at or near 30° twisting. Symmetry breaking due to twisting also gives rise to an unconventional Rashba-Edelstein effect, with electrically generated non-equilibrium spin densities possessing spins collinear to the applied electric field. We further discuss how the carrier doping concentration and band broadening control the crossover between the Fermi-sea and -surface spin response, which reconciles the seemingly disparate experimental observations of different CSC phenomena.
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Submitted 19 June, 2022;
originally announced June 2022.
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Spin Hall effect driven by the spin magnetic moment current in Dirac materials
Authors:
Zhendong Chi,
Guanxiong Qu,
Yong-Chang Lau,
Masashi Kawaguchi,
Junji Fujimoto,
Koki Takanashi,
Masao Ogata,
Masamitsu Hayashi
Abstract:
The spin Hall effect of a Dirac Hamiltonian system is studied using semiclassical analyses and the Kubo formula. In this system, the spin Hall conductivity is dependent on the definition of spin current. All components of the spin Hall conductivity vanish when spin current is defined as the flow of spin angular momentum. In contrast, the off-diagonal components of the spin Hall conductivity are no…
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The spin Hall effect of a Dirac Hamiltonian system is studied using semiclassical analyses and the Kubo formula. In this system, the spin Hall conductivity is dependent on the definition of spin current. All components of the spin Hall conductivity vanish when spin current is defined as the flow of spin angular momentum. In contrast, the off-diagonal components of the spin Hall conductivity are non-zero and scale with the carrier velocity (and the effective $g$-factor) when spin current consists of the flow of spin magnetic moment. We derive analytical formula of the conductivity, carrier mobility and the spin Hall conductivity to compare with experiments. In experiments, we use Bi as a model system that can be characterized by the Dirac Hamiltonian. Te and Sn are doped into Bi to vary the electron and hole concentration, respectively. We find the spin Hall conductivity ($σ_\mathrm{SH}$) takes a maximum near the Dirac point and decreases with increasing carrier density ($n$). The sign of $σ_\mathrm{SH}$ is the same regardless of the majority carrier type. The spin Hall mobility, proportional to $σ_\mathrm{SH}/n$, increases with increasing carrier mobility with a scaling coefficient of $\sim$1.4. These features can be accounted for quantitatively using the derived analytical formula. The results demonstrate that the giant spin magnetic moment, with an effective $g$-factor that approaches 100, is responsible for the spin Hall effect in Bi.
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Submitted 1 September, 2022; v1 submitted 23 May, 2022;
originally announced May 2022.
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Magnetic anisotropy of the van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ studied by angular-dependent XMCD
Authors:
M. Suzuki,
B. Gao,
G. Shibata,
S. Sakamoto,
Y. Nonaka,
K. Ikeda,
Z. Chi,
Y. -X. Wan,
T. Takeda,
Y. Takeda,
T. Koide,
A. Tanaka,
M. Kobayashi,
S. -W. Cheong,
A. Fujimori
Abstract:
The van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) has a two-dimensional crystal structure where each layer is stacked through van der Waals force. We have investigated the nature of the ferromagnetism and the weak perpendicular magnetic anisotropy (PMA) of CGT by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of CGT single crystals. The XMCD spectr…
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The van der Waals ferromagnet Cr$_2$Ge$_2$Te$_6$ (CGT) has a two-dimensional crystal structure where each layer is stacked through van der Waals force. We have investigated the nature of the ferromagnetism and the weak perpendicular magnetic anisotropy (PMA) of CGT by means of X-ray absorption spectroscopy and X-ray magnetic circular dichroism (XMCD) studies of CGT single crystals. The XMCD spectra at the Cr $L_{2,3}$ edge for different magnetic field directions were analyzed on the basis of the cluster-model multiplet calculation. The Cr valence is confirmed to be 3+ and the orbital magnetic moment is found to be nearly quenched, as expected for the high-spin $t_{2g}$$^3$ configuration of the Cr$^{3+}$ ion. A large ($\sim 0.2$ eV) trigonal crystal-field splitting of the $t_{2g}$ level caused by the distortion of the CrTe$_6$ octahedron has been revealed, while the single-ion anisotropy (SIA) of the Cr atom is found to have a sign {\it opposite} to the observed PMA and too weak compared to the reported anisotropy energy. The present result suggests that anisotropic exchange coupling between the Cr atoms through the ligand Te $5p$ orbitals having strong spin-orbit coupling has to be invoked to explain the weak PMA of CGT, as in the case of the strong PMA of CrI$_3$.
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Submitted 13 September, 2021;
originally announced September 2021.
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Reduced magnetocrystalline anisotropy of CoFe$_2$O$_4$ thin films studied by angle-dependent x-ray magnetic circular dichroism
Authors:
Yosuke Nonaka,
Yuki K. Wakabayashi,
Goro Shibata,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Tsuneharu Koide,
Masaaki Tanaka,
Ryosho Nakane,
Atsushi Fujimori
Abstract:
Spinel-type CoFe$_2$O$_4$ is a ferrimagnetic insulator with the Néel temperature exceeding 790 K, and shows a strong cubic magnetocrystalline anisotropy (MCA) in bulk materials. However, when a CoFe$_2$O$_4$ film is grown on other materials, its magnetic properties are degraded so that so-called magnetically dead layers are expected to be formed in the interfacial region. We investigate how the ma…
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Spinel-type CoFe$_2$O$_4$ is a ferrimagnetic insulator with the Néel temperature exceeding 790 K, and shows a strong cubic magnetocrystalline anisotropy (MCA) in bulk materials. However, when a CoFe$_2$O$_4$ film is grown on other materials, its magnetic properties are degraded so that so-called magnetically dead layers are expected to be formed in the interfacial region. We investigate how the magnetic anisotropy of CoFe$_2$O$_4$ is modified at the interface of CoFe$_2$O$_4$/Al$_2$O$_3$ bilayers grown on Si(111) using x-ray magnetic circular dichroism (XMCD). We find that the thinner CoFe$_2$O$_4$ films have significantly smaller MCA values than bulk materials. The reduction of MCA is explained by the reduced number of Co$^{2+}$ ions at the $O_h$ site reported by a previous study [Y. K. Wakabayashi $\textit{et al.}$, Phys. Rev. B $\textbf{96}$, 104410 (2017)].
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Submitted 23 July, 2021;
originally announced July 2021.
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On the relationship between orbital moment anisotropy, magnetocrystalline anisotropy, and Dzyaloshinskii-Moriya interaction in W/Co/Pt trilayers
Authors:
Zhendong Chi,
Yong-Chang Lau,
Vanessa Li Zhang,
Goro Shibata,
Shoya Sakamoto,
Yosuke Nonaka,
Keisuke Ikeda,
Yuxuan Wan,
Masahiro Suzuki,
Masashi Kawaguchi,
Masako Suzuki-Sakamaki,
Kenta Amemiya,
Naomi Kawamura,
Masaichiro Mizumaki,
Motohiro Suzuki,
Hyunsoo Yang,
Masamitsu Hayashi,
Atsushi Fujimori
Abstract:
We have studied the Co layer thickness dependences of magnetocrystalline anisotropy (MCA), Dzyaloshinskii-Moriya interaction (DMI), and orbital moment anisotropy (OMA) in W/Co/Pt trilayers, in order to clarify their correlations with each other. We find that the MCA favors magnetization along the film normal and monotonically increases with decreasing effective magnetic layer thickness (…
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We have studied the Co layer thickness dependences of magnetocrystalline anisotropy (MCA), Dzyaloshinskii-Moriya interaction (DMI), and orbital moment anisotropy (OMA) in W/Co/Pt trilayers, in order to clarify their correlations with each other. We find that the MCA favors magnetization along the film normal and monotonically increases with decreasing effective magnetic layer thickness ($t_\mathrm{eff}$). The magnitude of the Dzyaloshinskii-Moriya exchange constant ($|D|$) increases with decreasing $t_\mathrm{eff}$ until $t_\mathrm{eff} \sim$1 nm, below which $|D|$ decreases. The MCA and $|D|$ scale with $1/t_\mathrm{eff}$ for $t_\mathrm{eff}$ larger than $\sim$1 nm, indicating an interfacial origin. The increase of MCA with decreasing $t_\mathrm{eff}$ continues below $t_\mathrm{eff}$ $\sim$ 1 nm, but with a slower rate. To clarify the cause of the $t_\mathrm{eff}$ dependences of MCA and DMI, the OMA of Co in W/Co/Pt trilayers is studied using x-ray magnetic circular dichroism (XMCD). We find non-zero OMA when $t_\mathrm{eff}$ is smaller than $\sim$0.8 nm. The OMA increases with decreasing $t_\mathrm{eff}$ more rapidly than what is expected from the MCA, indicating that factors other than OMA contribute to the MCA at small $t_\mathrm{eff}$. The $t_\mathrm{eff}$ dependence of the OMA also suggests that $|D|$ at $t_\mathrm{eff}$ smaller than $\sim$1 nm is not related to the OMA at the interface. We propose that the growth of Co on W results in a strain and/or texture that reduces the interfacial DMI, and, to some extent, MCA at small $t_\mathrm{eff}$.
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Submitted 10 October, 2024; v1 submitted 1 February, 2021;
originally announced February 2021.
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Monoclinic EuSn$_2$As$_2$: A Novel High-Pressure Network Structure
Authors:
Lin Zhao,
Changjiang Yi,
Chang-Tian Wang,
Zhenhua Chi,
Yunyu Yin,
Xiaoli Ma,
Jianhong Dai,
Pengtao Yang,
Binbin Yue,
Jinguang Cheng,
Fang Hong,
Jian-Tao Wang,
Yonghao Han,
Youguo Shi,
Xiaohui Yu
Abstract:
The layered crystal of EuSn$_2$As$_2$ has a Bi$_2$Te$_3$-type structure in rhombohedral ($R\bar{3}m$) symmetry and has been confirmed to be an intrinsic magnetic topological insulator at ambient conditions. Combining {\it ab initio} calculations and \emph{in-situ} x-ray diffraction measurements, we identify a new monoclinic EuSn$_2$As$_2$ structure in $C2/m$ symmetry above $\sim$14 GPa. It has a t…
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The layered crystal of EuSn$_2$As$_2$ has a Bi$_2$Te$_3$-type structure in rhombohedral ($R\bar{3}m$) symmetry and has been confirmed to be an intrinsic magnetic topological insulator at ambient conditions. Combining {\it ab initio} calculations and \emph{in-situ} x-ray diffraction measurements, we identify a new monoclinic EuSn$_2$As$_2$ structure in $C2/m$ symmetry above $\sim$14 GPa. It has a three-dimensional network made up of honeycomb-like Sn sheets and zigzag As chains, transformed from the layered EuSn$_2$As$_2$ via a two-stage reconstruction mechanism with the connecting of Sn-Sn and As-As atoms successively between the buckled SnAs layers. Its dynamic structural stability has been verified by phonon mode analysis. Electrical resistance measurements reveal an insulator-metal-superconductor transition at low temperature around 5 and 15 GPa, respectively, according to the structural conversion, and the superconductivity with a \textit{T}${\rm {_C}}$ value of $\sim 4$ K is observed up to 30.8 GPa. These results establish a high-pressure EuSn$_2$As$_2$ phase with intriguing structural and electronic properties and expand our understandings about the layered magnetic topological insulators.
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Submitted 8 March, 2021; v1 submitted 31 January, 2021;
originally announced February 2021.
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Anisotropic spin distribution and perpendicular magnetic anisotropy in the layered ferromagnetic semiconductor (Ba,K)(Zn,Mn)$_{2}$As$_{2}$
Authors:
Shoya Sakamoto,
Guoqiang Zhao,
Goro Shibata,
Zheng Deng,
Kan Zhao,
Xiancheng Wang,
Yosuke Nonaka,
Keisuke Ikeda,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Tsuneharu Koide,
Arata Tanaka,
Sadamichi Maekawa,
Yasutomo J. Uemura,
Changqing Jin,
Atsushi Fujimori
Abstract:
Perpendicular magnetic anisotropy of the new ferromagnetic semiconductor (Ba,K)(Zn,Mn)$_{2}$As$_{2}$ is studied by angle-dependent x-ray magnetic circular dichroism measurements. The large magnetic anisotropy with the anisotropy field of 0.85 T is deduced by fitting the Stoner-Wohlfarth model to the magnetic-field-angle dependence of the projected magnetic moment. Transverse XMCD spectra highlight…
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Perpendicular magnetic anisotropy of the new ferromagnetic semiconductor (Ba,K)(Zn,Mn)$_{2}$As$_{2}$ is studied by angle-dependent x-ray magnetic circular dichroism measurements. The large magnetic anisotropy with the anisotropy field of 0.85 T is deduced by fitting the Stoner-Wohlfarth model to the magnetic-field-angle dependence of the projected magnetic moment. Transverse XMCD spectra highlights the anisotropic distribution of Mn 3$d$ electrons, where the $d_{xz}$ and $d_{yz}$ orbitals are less populated than the $d_{xy}$ state because of the $D_{2d}$ splitting arising from the elongated MnAs$_{4}$ tetrahedra. It is suggested that the magnetic anisotropy originates from the degeneracy lifting of $p$-$d_{xz}$, $d_{yz}$ hybridized states at the Fermi level and resulting energy gain due to spin-orbit coupling when spins are aligned along the $z$ direction.
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Submitted 30 September, 2020;
originally announced October 2020.
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Giant inverse Faraday effect in Dirac semimetals
Authors:
Masashi Kawaguchi,
Hana Hirose,
Zhendong Chi,
Yong-Chang Lau,
Frank Freimuth,
Masamitsu Hayashi
Abstract:
We have studied helicity dependent photocurrent (HDP) in Bi-based Dirac semimetal thin films. HDP increases with film thickness before it saturates, changes its sign when the majority carrier type is changed from electrons to holes and takes a sharp peak when the Fermi level lies near the charge neutrality point. These results suggest that irradiation of circularly polarized light to Dirac semimet…
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We have studied helicity dependent photocurrent (HDP) in Bi-based Dirac semimetal thin films. HDP increases with film thickness before it saturates, changes its sign when the majority carrier type is changed from electrons to holes and takes a sharp peak when the Fermi level lies near the charge neutrality point. These results suggest that irradiation of circularly polarized light to Dirac semimetals induces an effective magnetic field that aligns the carrier spin along the light spin angular momentum and generates a spin current along the film normal. The effective magnetic field is estimated to be orders of magnitude larger than that caused by the inverse Faraday effect (IFE) in typical transition metals. We consider the small effective mass and the large $g$-factor, characteristics of Dirac semimetals with strong spin orbit coupling, are responsible for the giant IFE, opening pathways to develop systems with strong light-spin coupling.
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Submitted 2 September, 2020;
originally announced September 2020.
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The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons
Authors:
Zhendong Chi,
Yong-Chang Lau,
Xiandong Xu,
Tadakatsu Ohkubo,
Kazuhiro Hono,
Masamitsu Hayashi
Abstract:
We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ allo…
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We have studied the charge to spin conversion in Bi$_{1-x}$Sb$_x$/CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi$_{1-x}$Sb$_x$ alloy. The SHC increases with increasing thickness of the Bi$_{1-x}$Sb$_x$ alloy before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present in the films, play little role. Surprisingly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of Dirac-like, thermally-excited electrons in the $L$ valley of the narrow gap Bi$_{1-x}$Sb$_x$ alloy.
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Submitted 28 October, 2019;
originally announced October 2019.
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Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers
Authors:
Yong-Chang Lau,
Zhendong Chi,
Tomohiro Taniguchi,
Masashi Kawaguchi,
Goro Shibata,
Naomi Kawamura,
Motohiro Suzuki,
Shunsuke Fukami,
Atsushi Fujimori,
Hideo Ohno,
Masamitsu Hayashi
Abstract:
We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are grown to study the effect of broken structural inversion symmetry. We compare the perpendicular magnetic anisotropy (PMA) energy of symmetric Pt/Co/Pt, Ir/Co/Ir…
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We have studied the magnetic properties of multilayers composed of ferromagnetic metal Co and heavy metals with strong spin orbit coupling (Pt and Ir). Multilayers with symmetric (ABA stacking) and asymmetric (ABC stacking) structures are grown to study the effect of broken structural inversion symmetry. We compare the perpendicular magnetic anisotropy (PMA) energy of symmetric Pt/Co/Pt, Ir/Co/Ir multilayers and asymmetric Pt/Co/Ir, Ir/Co/Pt multilayers. First, the interface contribution to the PMA is studied using the Co layer thickness dependence of the effective PMA energy. Comparison of the interfacial PMA between the Ir/Co/Pt, Pt/Co/Ir asymmetric structures and Pt/Co/Pt, Ir/Co/Ir symmetric structures indicate that the broken structural inversion symmetry induced PMA is small compared to the overall interfacial PMA. Second, we find the magnetic anisotropy field is significantly increased in multilayers when the ferromagnetic layers are antiferromagnetically coupled via interlayer exchange coupling (IEC). Macrospin model calculations can qualitatively account for the relation between the anisotropy field and the IEC. Among the structures studied, IEC is the largest for the asymmetric Ir/Co/Pt multilayers: the exchange coupling field exceeds 3 T and consequently, the anisotropy field approaches 10 T. Third, comparing the asymmetric Ir/Co/Pt and Pt/Co/Ir structures, we find the IEC and, to some extent, the interface PMA are stronger for the former than the latter. X-ray magnetic circular dichroism studies suggest that the proximity induced magnetization in Pt is larger for the Ir/Co/Pt multilayers than the inverted structure, which may partly account for the difference in the magnetic properties. These results show the intricate relation between PMA, IEC and the proximity induced magnetization that can be exploited to design artificial structures with unique magnetic characteristics.
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Submitted 20 October, 2019; v1 submitted 3 October, 2019;
originally announced October 2019.
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Plasmonic Light Illumination Creates a Channel to Achieve Fast Degradation of Ti3C2Tx Nanosheets
Authors:
Jiebo Li,
Ruzhan Qin,
Li Yan,
Zhen Chi,
Zhihao Yu,
Mingjun Hu,
Hailong Chen,
Guangcun Shan
Abstract:
Two-dimensional (2D) material-controllable degradation under light radiation is crucial for their photonics and medical-related applications, which are yet to be investigated. In this paper, we first report the laser illumination method to regulate the degradation rate of Ti3C2Tx nanosheets in aqueous solution. Comprehensive characterization of intermediates and final products confirmed that plasm…
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Two-dimensional (2D) material-controllable degradation under light radiation is crucial for their photonics and medical-related applications, which are yet to be investigated. In this paper, we first report the laser illumination method to regulate the degradation rate of Ti3C2Tx nanosheets in aqueous solution. Comprehensive characterization of intermediates and final products confirmed that plasmonic laser promoting the oxidation was strikingly different from heating the aqueous solution homogeneously. Laser illumination would nearly 10 times accelerate the degradation of Ti3C2Tx nanosheets in initial stage and create many smaller-sized oxidized products in a short time. Laser-induced fast degradation was principally ascribed to surface plasmonic resonance effect of Ti3C2Tx nanosheets. The degradation ability of such illumination could be controlled either by tuning the excitation wavelength or changing the excitation power. Furthermore, the laser- or thermal-induced degradation could be retarded by surface protection of Ti3C2Tx nanosheets. Our results suggest that plasmonic electron excitation of Ti3C2Tx nanosheets could build a new reaction channel and lead to the fast oxidation of nanosheets in aqueous solution, potentially enabling a series of water-based applications.
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Submitted 2 June, 2019; v1 submitted 26 May, 2019;
originally announced May 2019.
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Pressure-Induced Modification of Anomalous Hall Effect in Layered Fe$_3$GeTe$_2$
Authors:
Xiangqi Wang,
Zeyu Li,
Min Zhang,
Tao Hou,
Jinggeng Zhao,
Lin Li,
Azizur Rahman,
Zilong Xu,
Junbo Gong,
Zhenhua Chi,
Rucheng Dai,
Zhongping Wang,
Zhenhua Qiao,
Zengming Zhang
Abstract:
We systematically investigate the influence of high pressure on the electronic transport properties of layered ferromagnetic materials, in particular, those of Fe$_3$GeTe$_2$. Its crystal sustains a hexagonal phase under high pressures up to 25.9 GPa, while the Curie temperature decreases monotonously with the increasing pressure. By applying appropriate pressures, the experimentally measured anom…
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We systematically investigate the influence of high pressure on the electronic transport properties of layered ferromagnetic materials, in particular, those of Fe$_3$GeTe$_2$. Its crystal sustains a hexagonal phase under high pressures up to 25.9 GPa, while the Curie temperature decreases monotonously with the increasing pressure. By applying appropriate pressures, the experimentally measured anomalous Hall conductivity, $σ_{xy}^A$, can be efficiently controlled. Our theoretical study reveals that this finding can be attributed to the shift of the spin--orbit-coupling-induced splitting bands of Fe atoms. With loading compression, $σ_{xy}^A$ reaches its maximal value when the Fermi level lies inside the splitting bands and then attenuates when the splitting bands float above the Fermi level. Further compression leads to a prominent suppression of the magnetic moment, which is another physical cause of the decrease in $σ_{xy}^A$ at high pressure. These results indicate that the application of pressure is an effective approach in controlling the anomalous Hall conductivity of layered magnetic materials, which elucidates the physical mechanism of the large intrinsic anomalous Hall effect.
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Submitted 10 May, 2019;
originally announced May 2019.
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Magnetization process of the insulating ferromagnetic semiconductor (Al,Fe)Sb
Authors:
Shoya Sakamoto,
Le Duc Anh,
Pham Nam Hai,
Yukiharu Takeda,
Masaki Kobayashi,
Yuki K. Wakabayashi,
Yosuke Nonaka,
Keisuke Ikeda,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori
Abstract:
We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the ex…
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We have studied the magnetization process of the new insulating ferromagnetic semiconductor (Al,Fe)Sb by means of x-ray magnetic circular dichroism. For an optimally doped sample with 10% Fe, a magnetization was found to rapidly increase at low magnetic fields and to saturate at high magnetic fields at room temperature, well above the Curie temperature of 40 K. We attribute this behavior to the existence of nanoscale Fe-rich ferromagnetic domains acting as superparamagnets. By fitting the magnetization curves using the Langevin function representing superparamagnetism plus the paramagnetic linear function, we estimated the average magnetic moment of the nanoscale ferromagnetic domain to be 300-400 $μ_{B}$, and the fraction of Fe atoms participating in the nano-scale ferromagnetism to be $\sim$50%. Such behavior was also reported for (In,Fe)As:Be and Ge:Fe, and seems to be a universal characteristic of the Fe-doped ferromagnetic semiconductors. Further Fe doping up to 14% led to the weakening of the ferromagnetism probably because antiferromagnetic superexchange interaction between nearest-neighbor Fe-Fe pairs becomes dominant.
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Submitted 11 February, 2019;
originally announced February 2019.
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Systematic study of the electronic structure and the magnetic properties of a few-nm-thick epitaxial (Ni1-xCox)Fe2O4 (x = 0 - 1) layers grown on Al2O3(111)/Si(111) using soft X-ray magnetic circular dichroism: effects of cation distribution
Authors:
Yuki K. Wakabayashi,
Yosuke Nonaka,
Yukiharu Takeda,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Goro Shibata,
Arata Tanaka,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori,
Ryosho Nakane
Abstract:
We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling…
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We study the electronic structure and the magnetic properties of epitaxial (Ni1-xCox)Fe2O4(111) layers (x = 0 - 1) with thicknesses d = 1.7 - 5.2 nm grown on Al2O3(111)/Si(111) structures, to achieve a high value of inversion parameter y, which is the inverse-to-normal spinel-structure ratio, and hence to obtain good magnetic properties even when the thickness is thin enough for electron tunneling as a spin filter. We revealed the crystallographic (octahedral Oh or tetrahedral Td) sites and the valences of the Fe, Co, and Ni cations using experimental soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism spectra and configuration-interaction cluster-model calculation. In all the (Ni1-xCox)Fe2O4 layers with d = about 4 nm, all Ni cations occupy the Ni2+ (Oh) site, whereas Co cations occupy the three different Co2+ (Oh), Co2+ (Td), and Co3+ (Oh) sites with constant occupancies. According to these features, the occupancy of the Fe3+ (Oh) cations decreases and that of the Fe3+ (Td) cations increases with decreasing x. Consequently, we obtained a systematic increase of y with decreasing x and achieved the highest y value of 0.91 for the NiFe2O4 layer with d = 3.5 nm. From the d dependences of y and magnetization in the d range of 1.7 - 5.2 nm, a magnetically dead layer is present near the NiFe2O4/Al2O3 interface, but its influence on the magnetization was significantly suppressed compared with the case of CoFe2O4 layers reported previously [Y. K. Wakabayasi et al., Phys. Rev. B 96, 104410 (2017)], due to the high site selectivity of the Ni cations. Since our epitaxial NiFe2O4 layer with d = 3.5 nm has a high y values (0.91) and a reasonably large magnetization (180 emu/cc), it is expected to exhibit a strong spin filter effect, which can be used for efficient spin injection into Si.
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Submitted 8 August, 2018;
originally announced August 2018.
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Electronic States and Possible Origin of the Orbital-Glass State in a Nearly Metallic Spinel Cobalt Vanadate: An X-ray Magnetic Circular Dichroism Study
Authors:
Yosuke Nonaka,
Goro Shibata,
Rui Koborinai,
Keisuke Ishigami,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Tsuneharu Koide,
Arata Tanaka,
Takuro Katsufuji,
Atsushi Fujimori
Abstract:
We have investigated the orbital states of the orbital-glassy (short-range orbital ordered) spinel vanadate Co$_{1.21}$V$_{1.79}$O$_{4}$ using x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and subsequent configuration-interaction cluster-model calculation. From the sign of the XMCD spectra, it was found that the spin magnetic moment of the Co ion is aligned paralle…
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We have investigated the orbital states of the orbital-glassy (short-range orbital ordered) spinel vanadate Co$_{1.21}$V$_{1.79}$O$_{4}$ using x-ray absorption spectroscopy (XAS), x-ray magnetic circular dichroism (XMCD), and subsequent configuration-interaction cluster-model calculation. From the sign of the XMCD spectra, it was found that the spin magnetic moment of the Co ion is aligned parallel to the applied magnetic field and that of the V ion anti-parallel to it, consistent with neutron scattering studies. It was revealed that the excess Co ions at the octahedral site take the trivalent low-spin state, and induce a random potential to the V sublattice. The orbital magnetic moment of the V ion is small although finite, suggesting that the ordered orbitals mainly consists of real-number orbitals.
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Submitted 20 February, 2018;
originally announced February 2018.
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Effect(s) of Cobalt Substitution in $L1_{0}$-(Fe,Co)Pt Thin Films
Authors:
Shoya Sakamoto,
Kumar Srinivasan,
Rui Zhang,
Oleg Krupin,
Keisuke Ikeda,
Goro Shibata,
Yosuke Nonaka,
Zhendong Chi,
Masako Sakamaki,
Kenta Amemiya,
Atsushi Fujimori,
Antony Ajan
Abstract:
We have studied the effect of cobalt substitution in $L1_{0}$-Fe$_{1-x}$Co$_{x}$Pt films by means of x-ray magnetic circular dichroism (XMCD) and first-principles calculations. The magnetic moments of Fe ($\sim$2.5 $μ_{\rm B}$) and Co ($\sim$1.5 $μ_{\rm B}$) deduced using XMCD were almost unchanged upon Co doping, and the net magnetization decreases with increasing Co content. Calculation also sho…
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We have studied the effect of cobalt substitution in $L1_{0}$-Fe$_{1-x}$Co$_{x}$Pt films by means of x-ray magnetic circular dichroism (XMCD) and first-principles calculations. The magnetic moments of Fe ($\sim$2.5 $μ_{\rm B}$) and Co ($\sim$1.5 $μ_{\rm B}$) deduced using XMCD were almost unchanged upon Co doping, and the net magnetization decreases with increasing Co content. Calculation also showed that the 3$d$ electrons that have been added by Co substitution occupy only spin-down bands.
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Submitted 11 October, 2017;
originally announced October 2017.
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Pressure-induced Superconductivity in the Three-component Fermion Topological Semimetal Molybdenum Phosphide
Authors:
Zhenhua Chi,
Xuliang Chen,
Chao An,
Liuxiang Yang,
Jinggeng Zhao,
Zili Feng,
Yonghui Zhou,
Ying Zhou,
Chuanchuan Gu,
Bowen Zhang,
Yifang Yuan,
Curtis Kenney-Benson,
Wenge Yang,
Gang Wu,
Xiangang Wan,
Youguo Shi,
Xiaoping Yang,
Zhaorong Yang
Abstract:
Topological semimetal, a novel state of quantum matter hosting exotic emergent quantum phenomena dictated by the non-trivial band topology, has emerged as a new frontier in condensed-matter physics. Very recently, a coexistence of triply degenerate points of band crossing and Weyl points near the Fermi level was theoretically predicted and immediately experimentally verified in single crystalline…
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Topological semimetal, a novel state of quantum matter hosting exotic emergent quantum phenomena dictated by the non-trivial band topology, has emerged as a new frontier in condensed-matter physics. Very recently, a coexistence of triply degenerate points of band crossing and Weyl points near the Fermi level was theoretically predicted and immediately experimentally verified in single crystalline molybdenum phosphide (MoP). Here we show in this material the high-pressure electronic transport and synchrotron X-ray diffraction (XRD) measurements, combined with density functional theory (DFT) calculations. We report the emergence of pressure-induced superconductivity in MoP with a critical temperature Tc of about 2 K at 27.6 GPa, rising to 3.7 K at the highest pressure of 95.0 GPa studied. No structural phase transitions is detected up to 60.6 GPa from the XRD. Meanwhile, the Weyl points and triply degenerate points topologically protected by the crystal symmetry are retained at high pressure as revealed by our DFT calculations. The coexistence of three-component fermion and superconductivity in heavily pressurized MoP offers an excellent platform to study the interplay between topological phase of matter and superconductivity.
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Submitted 1 October, 2017;
originally announced October 2017.
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Anisotropic spin-density distribution and magnetic anisotropy of strained La$_{1-x}$Sr$_x$MnO$_3$ thin films: Angle-dependent x-ray magnetic circular dichroism
Authors:
G. Shibata,
M. Kitamura,
M. Minohara,
K. Yoshimatsu,
T. Kadono,
K. Ishigami,
T. Harano,
Y. Takahashi,
S. Sakamoto,
Y. Nonaka,
K. Ikeda,
Z. Chi,
M. Furuse,
S. Fuchino,
M. Okano,
J. -i. Fujihira,
A. Uchida,
K. Watanabe,
H. Fujihira,
S. Fujihira,
A. Tanaka,
H. Kumigashira,
T. Koide,
A. Fujimori
Abstract:
Magnetic anisotropies of ferromagnetic thin films are induced by epitaxial strain from the substrate via strain-induced anisotropy in the orbital magnetic moment and that in the spatial distribution of spin-polarized electrons. However, the preferential orbital occupation in ferromagnetic metallic La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films studied by x-ray linear dichroism (XLD) has always been fou…
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Magnetic anisotropies of ferromagnetic thin films are induced by epitaxial strain from the substrate via strain-induced anisotropy in the orbital magnetic moment and that in the spatial distribution of spin-polarized electrons. However, the preferential orbital occupation in ferromagnetic metallic La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) thin films studied by x-ray linear dichroism (XLD) has always been found out-of-plane for both tensile and compressive epitaxial strain and hence irrespective of the magnetic anisotropy. In order to resolve this mystery, we directly probed the preferential orbital occupation of spin-polarized electrons in LSMO thin films under strain by angle-dependent x-ray magnetic circular dichroism (XMCD). Anisotropy of the spin-density distribution was found to be in-plane for the tensile strain and out-of-plane for the compressive strain, consistent with the observed magnetic anisotropy. The ubiquitous out-of-plane preferential orbital occupation seen by XLD is attributed to the occupation of both spin-up and spin-down out-of-plane orbitals in the surface magnetic dead layer.
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Submitted 31 January, 2018; v1 submitted 16 June, 2017;
originally announced June 2017.
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Electronic structure and magnetic properties of magnetically dead layers in epitaxial CoFe2O4/Al2O3/Si(111) films studied by X-ray magnetic circular dichroism
Authors:
Yuki K. Wakabayashi,
Yosuke Nonaka,
Yukiharu Takeda,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Goro Shibata,
Arata Tanaka,
Yuji Saitoh,
Hiroshi Yamagami,
Masaaki Tanaka,
Atsushi Fujimori,
Ryosho Nakane
Abstract:
Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O…
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Epitaxial CoFe2O4/Al2O3 bilayers are expected to be highly efficient spin injectors into Si owing to the spin filter effect of CoFe2O4. To exploit the full potential of this system, understanding the microscopic origin of magnetically dead layers at the CoFe2O4/Al2O3 interface is necessary. In this paper, we study the crystallographic and electronic structures and the magnetic properties of CoFe2O4(111) layers with various thicknesses (thickness d = 1.4, 2.3, 4, and 11 nm) in the epitaxial CoFe2O4(111)/Al2O3(111)/Si(111) structures using soft X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) combined with cluster-model calculation. The magnetization of CoFe2O4 measured by XMCD gradually decreases with decreasing thickness d and finally a magnetically dead layer is clearly detected at d = 1.4 nm. The magnetically dead layer has frustration of magnetic interactions which is revealed from comparison between the magnetizations at 300 and 6 K. From analysis using configuration-interaction cluster-model calculation, the decrease of d leads to a decrease in the inverse-to-normal spinel structure ratio and also a decrease in the average valence of Fe at the octahedral sites. These results strongly indicate that the magnetically dead layer at the CoFe2O4/Al2O3 interface originates from various complex networks of superexchange interactions through the change in the crystallographic and electronic structures. Furthermore, from comparison of the magnetic properties between d = 1.4 and 2.3 nm, it is found that ferrimagnetic order of the magnetically dead layer at d = 1.4 nm is restored by the additional growth of the 0.9-nm-thick CoFe2O4 layer on it.
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Submitted 6 April, 2017;
originally announced April 2017.
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Pressure-induced semimetal to superconductor transition in a three-dimensional topological material ZrTe5
Authors:
Yonghui Zhou,
Juefei Wu,
Wei Ning,
Nana Li,
Yongping Du,
Xuliang Chen,
Ranran Zhang,
Zhenhua Chi,
Xuefei Wang,
Xiangde Zhu,
Pengchao Lu,
Cheng Ji,
Xiangang Wan,
Zhaorong Yang,
Jian Sun,
Wenge Yang,
Mingliang Tian,
Yuheng Zhang
Abstract:
As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Utilizing resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges surprisingly. The superconducting transition temperature Tc increases with applied pressure,…
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As a new type of topological materials, ZrTe5 shows many exotic properties under extreme conditions. Utilizing resistance and ac magnetic susceptibility measurements under high pressure, while the resistance anomaly near 128 K is completely suppressed at 6.2 GPa, a fully superconducting transition emerges surprisingly. The superconducting transition temperature Tc increases with applied pressure, and reaches a maximum of 4.0 K at 14.6 GPa, followed by a slight drop but remaining almost constant value up to 68.5 GPa. At pressures above 21.2 GPa, a second superconducting phase with the maximum Tc of about 6.0 K appears and coexists with the original one to the maximum pressure studied in this work. In situ high-pressure synchrotron X-ray diffraction and Raman spectroscopy combined with theoretical calculations indicate the observed two-stage superconducting behavior is correlated to the structural phase transition from ambient Cmcm phase to high-pressure C2/m phase around 6 GPa, and to a mixture of two high-pressure phases of C2/m and P-1 above 20 GPa. The combination of structure, transport measurement and theoretical calculations enable a complete understanding of the emerging exotic properties in three-dimensional topological materials happened under extreme environments.
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Submitted 20 September, 2015; v1 submitted 11 May, 2015;
originally announced May 2015.
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Ultrahigh Pressure Superconductivity in Molybdenum Disulfide
Authors:
Zhenhua Chi,
Feihsiang Yen,
Feng Peng,
Jinlong Zhu,
Yijin Zhang,
Xuliang Chen,
Zhaorong Yang,
Xiaodi Liu,
Yanming Ma,
Yusheng Zhao,
Tomoko Kagayama,
Yoshihiro Iwasa
Abstract:
Superconductivity commonly appears under pressure in charge density wave (CDW)-bearing transition metal dichalcogenides (TMDs), but has emerged so far only via either intercalation with electron donors or electrostatic doping in CDW-free TMDs. Theoretical calculations have predicted that the latter should be metallized through bandgap closure under pressure, but superconductivity remained elusive…
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Superconductivity commonly appears under pressure in charge density wave (CDW)-bearing transition metal dichalcogenides (TMDs), but has emerged so far only via either intercalation with electron donors or electrostatic doping in CDW-free TMDs. Theoretical calculations have predicted that the latter should be metallized through bandgap closure under pressure, but superconductivity remained elusive in pristine 2H-MoS2 upon substantial compression, where a pressure of up to 60 GPa only evidenced the metallic state. Here we report the emergence of superconductivity in pristine 2H-MoS2 at 90 GPa. The maximum onset transition temperature Tc(onset) of 11.5 K, the highest value among TMDs and nearly constant from 120 up to 200 GPa, is well above that obtained by chemical doping but comparable to that obtained by electrostatic doping. Tc(onset) is more than an order of magnitude larger than present theoretical expectations, raising questions on either the current calculation methodologies or the mechanism of the pressure-induced pairing state. Our findings strongly suggest further experimental and theoretical efforts directed toward the study of the pressure-induced superconductivity in all CDW-free TMDs.
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Submitted 18 March, 2015;
originally announced March 2015.
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Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride
Authors:
Xing-Chen Pan,
Xuliang Chen,
Huimei Liu,
Yanqing Feng,
Zhongxia Wei,
Yonghui Zhou,
Zhenhua Chi,
Li Pi,
Fei Yen,
Fengqi Song,
Xiangang Wan,
Zhaorong Yang,
Baigeng Wang,
Guanghou Wang,
Yuheng Zhang
Abstract:
Tungsten ditelluride has attracted intense research interest due to the recent discovery of its large unsaturated magnetoresistance up to 60 Tesla. Motivated by the presence of a small, sensitive Fermi surface of 5d electronic orbitals, we boost the electronic properties by applying a high pressure, and introduce superconductivity successfully. Superconductivity sharply appears at a pressure of 2.…
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Tungsten ditelluride has attracted intense research interest due to the recent discovery of its large unsaturated magnetoresistance up to 60 Tesla. Motivated by the presence of a small, sensitive Fermi surface of 5d electronic orbitals, we boost the electronic properties by applying a high pressure, and introduce superconductivity successfully. Superconductivity sharply appears at a pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of 7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasing pressure, thereby exhibiting the typical dome-shaped superconducting phase. From theoretical calculations, we interpret the low-pressure region of the superconducting dome to an enrichment of the density of states at the Fermi level and attribute the high-pressure decrease in Tc to possible structural instability. Thus, Tungsten ditelluride may provide a new platform for our understanding of superconductivity phenomena in transition metal dichalcogenides.
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Submitted 23 July, 2015; v1 submitted 29 January, 2015;
originally announced January 2015.
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Interplay between grain boundary grooving, stress, and dealloying in the agglomeration of NiSi1-xGex films
Authors:
H. B. Yao,
M. Bouville,
D. Z. Chi,
H. P. Sun,
X. Q. Pan,
D. J. Srolovitz,
D. Mangelinck
Abstract:
Germanosilicides, especially those formed on compressive substrates, are less stable than silicides against agglomeration. By studying the solid-state reaction of Ni thin film on strained Si0.8Ge0.2(001), we show that nickel germanosilicide is different from nickel silicide and nickel germanide in several respects: the grains are smaller and faceted, the groove angle is sharper, and dealloying t…
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Germanosilicides, especially those formed on compressive substrates, are less stable than silicides against agglomeration. By studying the solid-state reaction of Ni thin film on strained Si0.8Ge0.2(001), we show that nickel germanosilicide is different from nickel silicide and nickel germanide in several respects: the grains are smaller and faceted, the groove angle is sharper, and dealloying takes place. The germanium out-diffusion creates a stress in the film which favors grooving and agglomeration.
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Submitted 18 May, 2006;
originally announced May 2006.
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Pyramidal structural defects in erbium silicide thin films
Authors:
Eu Jin Tan,
Mathieu Bouville,
Dong Zhi Chi,
Kin Leong Pey,
Pooi See Lee,
David J. Srolovitz,
Chih Hang Tung,
Lei Jun Tang
Abstract:
A new pyramidal structural defect, 5 to 8 micron wide, has been discovered in thin films of epitaxial erbium disilicide formed by annealing thin Er films on Si(001) substrates at temperatures of 500 to 800C. Since these defects form even upon annealing in vacuum of TiN-capped films their formation is not due to oxidation. The pyramidal defects are absent when the erbium disilicide forms on amorp…
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A new pyramidal structural defect, 5 to 8 micron wide, has been discovered in thin films of epitaxial erbium disilicide formed by annealing thin Er films on Si(001) substrates at temperatures of 500 to 800C. Since these defects form even upon annealing in vacuum of TiN-capped films their formation is not due to oxidation. The pyramidal defects are absent when the erbium disilicide forms on amorphous substrates, which suggests that epitaxial strains play an important role in their formation. We propose that these defects form as a result of the separation of the silicide film from the substrate and its buckling in order to relieve the compressive, biaxial epitaxial stresses. Silicon can then diffuse through the silicide or along the interface to fully or partially fill the void between the buckled erbium disilicide film and the substrate.
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Submitted 10 October, 2005;
originally announced October 2005.
