Showing 1–30 of 30 results for author: Cheng, K

Massively multiplexed nanoscale magnetometry with diamond quantum sensors

Authors: Kai-Hung Cheng, Zeeshawn Kazi, Jared Rovny, Bichen Zhang, Lila Nassar, Jeff D. Thompson, Nathalie P. de Leon

Abstract: Single nitrogen vacancy (NV) centers in diamond have been used extensively for high-sensitivity nanoscale sensing, but conventional approaches use confocal microscopy to measure individual centers sequentially, limiting throughput and access to non-local physical properties. Here we design and implement a multiplexed NV sensing platform that allows us to read out many single NV centers simultaneou… ▽ More Single nitrogen vacancy (NV) centers in diamond have been used extensively for high-sensitivity nanoscale sensing, but conventional approaches use confocal microscopy to measure individual centers sequentially, limiting throughput and access to non-local physical properties. Here we design and implement a multiplexed NV sensing platform that allows us to read out many single NV centers simultaneously using a low-noise camera. Using this platform, we coherently manipulate and read out the spin states of hundreds of individual NV centers in parallel, achieving comparable magnetic field sensitivity to confocal measurements. We also implement a parallelized version of spin-to-charge-conversion readout for low NV center spin state readout noise and use it to demonstrate multiplexed covariance magnetometry, in which we measure six two-point magnetic field correlators from four NV centers simultaneously. The number of correlators we can measure is limited only by the available laser power, opening the door to massively multiplexed covariance magnetometry. Our platform significantly increases the throughput and broadens the applications of nanoscale sensing using diamond quantum sensors. △ Less

Submitted 25 August, 2024; v1 submitted 21 August, 2024; originally announced August 2024.

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Authors: Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla

Abstract: Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O… ▽ More Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O2 at 1000-1100 C. Using a novel finite difference scheme for the diffusion equation with time- and space-varying diffusion constant, we extract diffusion constants for Al, Fe, and cation vacancies under the given conditions, including the vacancy concentration dependence for Al. indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on Sn-doped beta-gallium oxide substrates, gradients observed in the extent of Al diffusion indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on (010) Fe-doped substrates, the Al diffusion is uniform through the SLs, indicating a depth-uniform concentration of vacancies. We find no evidence in either case for the introduction of gallium vacancies from the free surface at rates sufficient to affect Al diffusion down to ppm concentrations, which has important bearing on the validity of typically-made assumptions of vacancy equilibration. Additionally, we show that unintentional impurities in Sn-doped gallium oxide such as Fe, Ni, Mn, Cu, and Li also diffuse towards the surface and accumulate. Many of these likely have fast interstitial diffusion modes capable of destabilizing devices over time, thus highlighting the importance of controlling unintentional impurities in beta-gallium oxide wafers. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Comments: 11 pages, 4 figures, references a supplimental which will be submitted seperately

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Authors: Kun Cheng, Tianyi Tang, Wenkang Zhan, Zhenyu Sun, Bo Xu, Chao Zhao, Zhanguo Wang

Abstract: The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations (TDs), antiphase boundaries (APBs), and thermal cracks, significantly impacting device performance. Current processes struggle to suppress these defects simultaneous… ▽ More The direct growth of III-V semiconductors on silicon holds tremendous potential for photonics applications. However, the inherent differences in their properties lead to defects in the epitaxial layer, including threading dislocations (TDs), antiphase boundaries (APBs), and thermal cracks, significantly impacting device performance. Current processes struggle to suppress these defects simultaneously, necessitating the development of methods to inhibit TDs and APBs in a thin buffer on silicon. This study introduces a GaSb buffer layer during GaAs epitaxy on a silicon (001) substrate. This approach successfully suppresses defect formation by promoting the formation of interfacial misfit dislocation (IMF) arrays at both the AlSb/Si and GaAs/GaSb interfaces. The resulting GaAs layer exhibits a step-flow surface with a rough mean square of approximately 3.8 nm and a full width at half maximum of 158 arcsec. Remarkably, the growth is achieved without any observable interfacial intermixing. Building on this platform, InAs/GaAs quantum dots (QDs) are grown with a density of 3.8E10/cm2, emitting at a wavelength of 1288 nm. This breakthrough holds immense promise for developing high-quality GaAs films with reduced defect densities on silicon for O band lasers, laying the foundation for the mass production of silicon-based integrated circuits. △ Less

Submitted 22 February, 2024; v1 submitted 23 December, 2023; originally announced December 2023.

Piezoelectric altermagnetism and spin-valley polarization in Janus monolayer $\mathrm{Cr_2SO}$

Authors: San-Dong Guo, Xiao-Shu Guo, Kai Cheng, Ke Wang, Yee Sin Ang

Abstract: The altermagnetism can achieve spin-split bands in collinear symmetry-compensated antiferromagnets. Here, we predict altermagnetic order in Janus monolayer $\mathrm{Cr_2SO}$ with eliminated inversion symmetry, which can realize the combination of piezoelectricity and altermagnetism in a two-dimensional material, namely 2D piezoelectric altermagnetism. It is found that $\mathrm{Cr_2SO}$ is an alter… ▽ More The altermagnetism can achieve spin-split bands in collinear symmetry-compensated antiferromagnets. Here, we predict altermagnetic order in Janus monolayer $\mathrm{Cr_2SO}$ with eliminated inversion symmetry, which can realize the combination of piezoelectricity and altermagnetism in a two-dimensional material, namely 2D piezoelectric altermagnetism. It is found that $\mathrm{Cr_2SO}$ is an altermagnetic semiconductor, and the spin-split bands of both valence and conduction bands are near the Fermi level. The $\mathrm{Cr_2SO}$ has large out-of-plane piezoelectricity ($|d_{31}|$$=$0.97 pm/V), which is highly desirable for ultrathin piezoelectric device application. Due to spin-valley locking, both spin and valley can be polarized by simply breaking the corresponding crystal symmetry with uniaxial strain. Our findings provide a platform to integrate spin, piezoelectricity and valley in a single material, which is useful for multi-functional device applications. △ Less

Submitted 6 June, 2023; originally announced June 2023.

Comments: 6 pages, 5 figures

Synthesis and physical properties of Ce$_2$Rh$_{3+δ}$Sb$_4$ single crystals

Authors: Kangqiao Cheng, Shuo Zou, Huanpeng Bu, Jiawen Zhang, Shijie Song, Hanjie Guo, Huiqiu Yuan, Yongkang Luo

Abstract: Millimeter-sized Ce$_2$Rh$_{3+δ}$Sb$_4$ ($δ\approx 1/8$) single crystals were synthesized by a Bi-flux method and their physical properties were studied by a combination of electrical transport, magnetic and thermodynamic measurements. The resistivity anisotropy $ρ_{a,b}/ρ_{c}\sim2$, manifesting a quasi-one-dimensional electronic character. Magnetic susceptibility measurements confirm… ▽ More Millimeter-sized Ce$_2$Rh$_{3+δ}$Sb$_4$ ($δ\approx 1/8$) single crystals were synthesized by a Bi-flux method and their physical properties were studied by a combination of electrical transport, magnetic and thermodynamic measurements. The resistivity anisotropy $ρ_{a,b}/ρ_{c}\sim2$, manifesting a quasi-one-dimensional electronic character. Magnetic susceptibility measurements confirm $\mathbf{ab}$ as the magnetic easy plane. A long-range antiferromagnetic transition occurs at $T_N=1.4$ K, while clear short-range ordering can be detected well above $T_N$. The low ordering temperature is ascribed to the large Ce-Ce distance as well as the geometric frustration. Kondo scale is estimated to be about 2.4 K, comparable to the strength of magnetic exchange. Ce$_2$Rh$_{3+δ}$Sb$_4$, therefore, represents a rare example of dense Kondo lattice whose Ruderman-Kittel-Kasuya-Yosida exchange and Kondo coupling are both weak but competing. △ Less

Submitted 16 August, 2023; v1 submitted 15 May, 2023; originally announced May 2023.

Comments: 7 pages, 4 figures, 2 tables

Journal ref: Phys. Rev. Mater. 7. 084404 (2023)

Janus monolayer ScXY (X$\neq$Y=Cl, Br and I) for piezoelectric and valleytronic application: a first-principle prediction

Authors: San-Dong Guo, Xiao-Shu Guo, Shuo-Ning Si, Kai Cheng, Ke Wang, Yee Sin Ang

Abstract: Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X$\neq$Y=Cl, Br and I) monolayers are predicted to be in-plane piezoelectric ferromagnetic (FM) semiconductors with dynamical, mechanical and thermal stabilities. The predicted piezoelectric strain coefficients $d_{11}$ and… ▽ More Coexistence of ferromagnetism, piezoelectricity and valley in two-dimensional (2D) materials is crucial to advance multifunctional electronic technologies. Here, Janus ScXY (X$\neq$Y=Cl, Br and I) monolayers are predicted to be in-plane piezoelectric ferromagnetic (FM) semiconductors with dynamical, mechanical and thermal stabilities. The predicted piezoelectric strain coefficients $d_{11}$ and $d_{31}$ (absolute values) are higher than ones of most 2D materials. Moreover, the $d_{31}$ (absolute value) of ScClI reaches up to 1.14 pm/V, which is highly desirable for ultrathin piezoelectric device application. To obtain spontaneous valley polarization, charge doping are explored to tune the direction of magnetization of ScXY. By appropriate hole doping, their easy magnetization axis can change from in-plane to out-of-plane, resulting in spontaneous valley polarization. Taking ScBrI with 0.20 holes per f.u. as a example, under the action of an in-plane electric field, the hole carriers of K valley turn towards one edge of the sample, which will produce anomalous valley Hall effect (AVHE), and the hole carriers of $Γ$ valley move in a straight line. These findings could pave the way for designing piezoelectric and valleytronic devices. △ Less

Submitted 19 March, 2023; originally announced March 2023.

Comments: 7 pages,7 figures

$^{75}$As NMR study of the antiferromagnetic Kondo lattice compound CeNiAsO

Authors: Fangjun Lu, Xiaobo He, Kangqiao Cheng, Zhuo Wang, Jian Zhang, Yongkang Luo

Abstract: We revisit the magnetic properties of the antiferromagnetic Kondo lattice CeNiAsO by $^{75}$As nuclear magnetic resonance measurements. Our results confirm two successive antiferromagnetic transitions of Ce moments at $T_{N1}=9.0(3)$ K and $T_{N2}=7.0(3)$ K. Incommensurate and commensurate antiferromagnetic orders are suggested for $T_{N2}<T<T_{N1}$ and $T<T_{N2}$ respectively, consistent with pre… ▽ More We revisit the magnetic properties of the antiferromagnetic Kondo lattice CeNiAsO by $^{75}$As nuclear magnetic resonance measurements. Our results confirm two successive antiferromagnetic transitions of Ce moments at $T_{N1}=9.0(3)$ K and $T_{N2}=7.0(3)$ K. Incommensurate and commensurate antiferromagnetic orders are suggested for $T_{N2}<T<T_{N1}$ and $T<T_{N2}$ respectively, consistent with previous neutron and muon experiments. A Knight shift anomaly, characterized by the failure of $K(T)-χ(T)$ scaling, is observed below $T^*\sim15$ K, which gives a measure of the onset of coherent $c-f$ correlations. This energy scale is further confirmed by the spin-lattice relaxation rate ($1/T_1$). The analysis of spin dynamics also reveals a quasi-two-dimensional character of spin fluctuations in CeNiAsO. This work paves the way for further $^{75}$As nuclear magnetic resonance studies under pressure. △ Less

Submitted 4 January, 2023; v1 submitted 14 September, 2022; originally announced September 2022.

Comments: 8 pages, 6 figures, 1 table

Journal ref: Phys. Rev. B 107, 045104 (2023)

Interfacial superconductivity and zero bias peak in quasi-one-dimensional Bi2Te3/Fe1+yTe heterostructure nanostructures

Authors: Man Kit Cheng, Cheuk Yin Ng, Sui Lun Ho, Omargeldi Atanov, Wai Ting Tai, Jing Liang, Rolf Lortz, Iam Keong Sou

Abstract: Bi2Te3/Fe1+yTe heterostructures are known to exhibit interfacial superconductivity between two non-superconducting materials: Fe1+yTe as the parent compound of Fe-based superconducting materials and the topological insulator Bi2Te3. Here, we present a top-down approach starting from two-dimensional (2D) heterostructures to fabricate one-dimensional (1D) Bi2Te3/Fe1+yTe nanowires or narrow nanoribbo… ▽ More Bi2Te3/Fe1+yTe heterostructures are known to exhibit interfacial superconductivity between two non-superconducting materials: Fe1+yTe as the parent compound of Fe-based superconducting materials and the topological insulator Bi2Te3. Here, we present a top-down approach starting from two-dimensional (2D) heterostructures to fabricate one-dimensional (1D) Bi2Te3/Fe1+yTe nanowires or narrow nanoribbons. We demonstrate that the Bi2Te3/Fe1+yTe heterostructure remains intact in nanostructures of widths on the order of 100 nm and the interfacial superconductivity is preserved, as evidenced by electrical transport and Andreev reflection point contact spectroscopy experiments measured at the end of the nanowire. The differential conductance shows a similar superconducting twin-gap structure as in two-dimensional heterostructures, but with enhanced fluctuation effects due to the lower dimensionality. A zero-bias conductance peak indicates the presence of an Andreev bound state and given the involvement of the topological Bi2Te3 surface state, we discuss a possible topological nature of superconductivity with strong interplay with an emerging ferromagnetism due to the interstitial excess iron in the Fe1+yTe layer, developing in parallel with superconductivity at low temperatures. △ Less

Submitted 1 December, 2022; v1 submitted 8 August, 2022; originally announced August 2022.

Electric-field induced magnetic-anisotropy transformation to achieve spontaneous valley polarization

Authors: San-Dong Guo, Xiao-Shu Guo, Guang-Zhao Wang, Kai Cheng, Yee-Sin Ang

Abstract: Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA) transformation. Through the first-principle calculations, our idea is illustrated by a concrete example of $\mathrm{VSi_2P_4}$ monolayer. The increasing electric… ▽ More Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA) transformation. Through the first-principle calculations, our idea is illustrated by a concrete example of $\mathrm{VSi_2P_4}$ monolayer. The increasing electric field can induce a transition of MA from in-plane to out-of-plane by changing magnetic anisotropy energy (MAE) from negative to positive value, which is mainly due to increasing magnetocrystalline anisotropy (MCA) energy. The out-of-plane magnetization is in favour of spontaneous valley polarization in $\mathrm{VSi_2P_4}$. Within considered electric field range, $\mathrm{VSi_2P_4}$ is always ferromagnetic (FM) ground state. In a certain range of electric field, the coexistence of semiconductor and out-of-plane magnetization makes $\mathrm{VSi_2P_4}$ become a true ferrovalley (FV) material. The anomalous valley Hall effect (AVHE) can be observed under in-plane and out-of-plane electrical field in $\mathrm{VSi_2P_4}$. Our works pave the way to design the ferrovalley material by electric field. △ Less

Submitted 3 August, 2022; originally announced August 2022.

Comments: 6 pages, 6 figures. arXiv admin note: text overlap with arXiv:2207.13420

Importance of magnetic shape anisotropy in determining magnetic and electronic properties of monolayer $\mathrm{VSi_2P_4}$

Authors: San-Dong Guo, Yu-Ling Tao, Kai Cheng, Bing Wang, Yee-Sin Ang

Abstract: Two-dimensional (2D) ferromagnets have been a fascinating subject of research, and magnetic anisotropy (MA) is indispensable for stabilizing the 2D magnetic order. Here, we investigate magnetic anisotropy energy (MAE), magnetic and electronic properties of $\mathrm{VSi_2P_4}$ by using the generalized gradient approximation plus $U$ (GGA+$U$) approach. For large $U$, the magnetic shape anisotropy (… ▽ More Two-dimensional (2D) ferromagnets have been a fascinating subject of research, and magnetic anisotropy (MA) is indispensable for stabilizing the 2D magnetic order. Here, we investigate magnetic anisotropy energy (MAE), magnetic and electronic properties of $\mathrm{VSi_2P_4}$ by using the generalized gradient approximation plus $U$ (GGA+$U$) approach. For large $U$, the magnetic shape anisotropy (MSA) energy has a more pronounced contribution to the MAE, which can overcome the magnetocrystalline anisotropy (MCA) energy to evince an easy-plane. For fixed out-of-plane MA, monolayer $\mathrm{VSi_2P_4}$ undergoes ferrovalley (FV), half-valley-metal (HVM), valley-polarized quantum anomalous Hall insulator (VQAHI), HVM and FV states with increasing $U$. However, for assumptive in-plane MA, there is no special quantum anomalous Hall (QAH) state and spontaneous valley polarization within considered $U$ range. According to the MAE and electronic structure with fixed out-of-plane or in-plane MA, the intrinsic phase diagram shows common magnetic semiconductor (CMS), FV and VQAHI in monolayer $\mathrm{VSi_2P_4}$. At representative $U$$=$3 eV widely used in references, $\mathrm{VSi_2P_4}$ can be regarded as a 2D-$XY$ magnet, not Ising-like 2D long-range order magnets predicted in previous works with only considering MCA energy. Our findings shed light on importance of MSA in determining magnetic and electronic properties of monolayer $\mathrm{VSi_2P_4}$. △ Less

Submitted 27 July, 2022; originally announced July 2022.

Comments: 7 pages,7 figures. arXiv admin note: text overlap with arXiv:2205.07012

La$_2$Rh$_{3+δ}$Sb$_4$: A new ternary superconducting rhodium-antimonide

Authors: Kangqiao Cheng, Wei Xie, Shuo Zou, Huanpeng Bu, Jin-Ke Bao, Zengwei Zhu, Hanjie Guo, Chao Cao, Yongkang Luo

Abstract: Rhodium-containing compounds offer a fertile playground to explore novel materials with superconductivity and other fantastic electronic correlation effects. A new ternary rhodium-antimonide La$_2$Rh$_{3+δ}$Sb$_4$ ($δ\approx 1/8$) has been synthesized by a Bi-flux method. It crystallizes in the orthorhombic Pr$_2$Ir$_3$Sb$_4$-like structure, with the space group $Pnma$ (No. 62). The crystalline st… ▽ More Rhodium-containing compounds offer a fertile playground to explore novel materials with superconductivity and other fantastic electronic correlation effects. A new ternary rhodium-antimonide La$_2$Rh$_{3+δ}$Sb$_4$ ($δ\approx 1/8$) has been synthesized by a Bi-flux method. It crystallizes in the orthorhombic Pr$_2$Ir$_3$Sb$_4$-like structure, with the space group $Pnma$ (No. 62). The crystalline structure appears as stacking the two dimensional RhSb$_4$- and RhSb$_5$-polyhedra networks along $\mathbf{b}$ axis, and the La atoms embed in the cavities of these networks. Band structure calculations confirm it as a multi-band metal with a van-Hove singularity like feature at the Fermi level, whose density of states are mainly of Rh-4$d$ and Sb-5$p$ characters. The calculations also imply that the redundant Rh acts as charge dopant. Superconductivity is observed in this material with onset transition at $T_c^{on}\approx$ 0.8 K. Ultra-low temperature magnetic susceptibility and specific heat measurements suggest that it is an s-wave type-II superconductor. Our work may also imply that the broad $Ln_2$$Tm_{3+δ}$Sb$_4$ ($Ln$=Rare earth, $Tm$=Rh, Ir...) family may host new material bases where new superconductors, quantum magnetism and other electronic correlation effects could be found. △ Less

Submitted 13 October, 2022; v1 submitted 11 June, 2022; originally announced June 2022.

Comments: 15+1 pages, 7+1 figures, 2+1 tables

Journal ref: Materials Futures 1, 045201 (2022)

Uniaxial stress effect on the quasi-one-dimensional Kondo lattice CeCo$_2$Ga$_8$

Authors: Kangqiao Cheng, Binjie Zhou, Cuixiang Wang, Shuo Zou, Yupeng Pan, Xiaobo He, Jian Zhang, Fangjun Lu, Le Wang, Youguo Shi, Yongkang Luo

Abstract: Quantum critical phenomena in the quasi-one-dimensional limit remains an open issue. We report the uniaxial stress effect on the quasi-one-dimensional Kondo lattice CeCo$_2$Ga$_8$ by electric transport and AC heat capacity measurements. CeCo$_2$Ga$_8$ is speculated to sit in close vicinity but on the quantum-disordered side of a quantum critical point. Upon compressing the ${c}$ axis, parallel to… ▽ More Quantum critical phenomena in the quasi-one-dimensional limit remains an open issue. We report the uniaxial stress effect on the quasi-one-dimensional Kondo lattice CeCo$_2$Ga$_8$ by electric transport and AC heat capacity measurements. CeCo$_2$Ga$_8$ is speculated to sit in close vicinity but on the quantum-disordered side of a quantum critical point. Upon compressing the ${c}$ axis, parallel to the Ce-Ce chain, the onset of coherent Kondo effect is enhanced. In contrast, the electronic specific heat diverges more rapidly at low temperature when the intra-chain distance is elongated by compressions along {a} or {b} axes. These results suggest that a tensile intra-chain strain ($\varepsilon_c >0$) pushes CeCo$_2$Ga$_8$ closer to a quantum critical point, while a compressive intra-chain strain ($\varepsilon_c <0$) likely causes departure. Our work provides a rare paradigm of manipulation near a quantum critical point in a quasi-1D Kondo lattice by uniaxial stress, and paves the way for further investigations on the unique feature of quantum criticality in the quasi-1D limit. △ Less

Submitted 10 June, 2022; v1 submitted 10 February, 2022; originally announced February 2022.

Comments: 5 pages, 4 figures

Journal ref: Chin. Phys. B 31, 067104 (2022)

Single-crystal epitaxial europium iron garnet films with strain-induced perpendicular magnetic anisotropy: structural, strain, magnetic, and spin transport properties

Authors: M. X. Guo, C. K. Cheng, Y. C. Liu, C. N. Wu, W. N. Chen, T. Y Chen, C. T. Wu, C. H. Hsu, S. Q. Zhou, C. F. Chang, L. H. Tjeng, S. F. Lee, C. F. Pai, M. Hong, J. Kwo

Abstract: Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, part… ▽ More Single-crystal europium iron garnet (EuIG) thin films epitaxially strain-grown on gadolinium gallium garnet (GGG)(100) substrates using off-axis sputtering have strain-induced perpendicular magnetic anisotropy (PMA). By varying the sputtering conditions, we have tuned the europium/iron (Eu/Fe) composition ratios in the films to tailor the film strains. The films exhibited an extremely smooth, particle-free surface with roughness as low as 0.1 nm as observed using atomic force microscopy. High-resolution x-ray diffraction analysis and reciprocal space maps showed in-plane epitaxial film growth, very smooth film/substrate interface, excellent film crystallinity with a small full width at half maximum of 0.012$^{\circ}$ in the rocking curve scans, and an in-plane compressive strain without relaxation. In addition, spherical aberration-corrected scanning transmission electron microscopy showed an atomically abrupt interface between the EuIG film and GGG. The measured squarish out-of-plane magnetization-field hysteresis loops by vibrating sample magnetometry in conjunction with the measurements from angle-dependent x-ray magnetic dichroism demonstrated the PMA in the films. We have tailored the magnetic properties of the EuIG thin films, including saturation magnetization ranging from 71.91 to 124.51 emu/c.c. (increase with the (Eu/Fe) ratios), coercive field from 27 to 157.64 Oe, and the strength of PMA field ($H_\bot$) increasing from 4.21 to 18.87 kOe with the in-plane compressive strain from -0.774 to -1.044%. We have also investigated spin transport in Pt/EuIG bi-layer structure and evaluated the real part of spin mixing conductance to be $3.48\times10^{14} Ω^{-1}m^{-2}$. We demonstrated the current-induced magnetization switching with a low critical switching current density of $3.5\times10^6 A/cm^2$, showing excellent potential for low-dissipation spintronic devices. △ Less

Submitted 11 January, 2022; originally announced January 2022.

Comments: 29 pages, 9 figures, 1 table

High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing

Authors: Ru Xu, Peng Chen, Jing Zhou, Yimeng Li, Yuyin Li, Tinggang Zhu, Kai Cheng, Dunjun Chen, Zili Xie, Jiandong Ye, Bin Liu, Xiangqian Xiu, Ping Han, Yi Shi, Rong Zhang, Youdou Zheng

Abstract: GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra-high voltage (UHV) applications. Then, a golden question is wheth… ▽ More GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. However, the breakdown voltage (BV) of the SBDs are far from exploiting the material advantages of GaN at present, limiting the desire to use GaN for ultra-high voltage (UHV) applications. Then, a golden question is whether the excellent properties of GaN-based materials can be practically used in the UHV field? Here we demonstrate UHV AlGaN/GaN SBDs on sapphire with a BV of 10.6 kV, a specific on-resistance of 25.8 mΩ.cm2, yielding a power figure of merit of more than 3.8 GW/cm2. These devices are designed with single channel and 85-μm anode-to-cathode spacing, without other additional electric field management, demonstrating its great potential for the UHV application in power electronics. △ Less

Submitted 15 August, 2021; originally announced August 2021.

Comments: 18 pages, 7 figures. This work has ever been successfully submitted to Nature Electronics for possible publication in July 2021, and the manuscript ID is NATELECTRON-21074250

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

Authors: Guangnan Zhou, Fanming Zeng, Rongyu Gao, Qing Wang, Kai Cheng, Guangrui Xia, Hongyu Yu

Abstract: We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold… ▽ More We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6 V with negligible influence on the threshold voltage and on-resistance. Time-dependent gate breakdown measurements reveal that the maximum gate drive voltage increases from 6.2 to 10.6 V for a 10-year lifetime with a 1% gate failure rate. This method effectively expands the operating voltage margin of the p-GaN gate HEMTs without any other additional process steps. △ Less

Submitted 2 June, 2021; originally announced June 2021.

Ion-induced nanopatterning of a bacterial cellulose hydrogel

Authors: Sandra L. Arias, Ming Kit Cheng, Ana Civantos, Joshua Devorkin, Camilo Jaramillo, Jean Paul Allain

Abstract: Hydrogels provide a solution-mimicking environment for the interaction with living systems that make them desirable for various biomedical and technological applications. Because relevant biological processes in living tissues occur at the biomolecular scale, hydrogel nanopatterning can be leveraged to attain novel material properties and functionalities. However, the fabrication of high aspect ra… ▽ More Hydrogels provide a solution-mimicking environment for the interaction with living systems that make them desirable for various biomedical and technological applications. Because relevant biological processes in living tissues occur at the biomolecular scale, hydrogel nanopatterning can be leveraged to attain novel material properties and functionalities. However, the fabrication of high aspect ratio (HAR) nanostructures in hydrogels capable of self-standing in aqueous environments, with fine control of the size and shape distribution, remains challenging. Here, we report the synthesis of nanostructures with a HAR in bacterial cellulose (BC) hydrogel via directed plasma nanosynthesis using argon ions. The nanostructures in BC are reproducible, stable to sterilization, and liquid immersion. Using in-situ surface characterization and semi-empirical modeling, we discovered that pattern formation was linked to the formation of graphite-like clusters composed of a mixture of C-C and C=C bonds. Moreover, our model predicts that reactive species at the onset of the argon irradiation accelerate the bond breaking of weak bonds, contributing to the formation of an amorphous carbon layer and nanopattern growth. △ Less

Submitted 21 June, 2020; v1 submitted 14 November, 2019; originally announced December 2019.

Comments: This paper is now published on ACS Applied Nano Materials 2020

Robust boundary flow in chiral active fluid

Authors: Xiang Yang, Chenyang Ren, Kangjun Cheng, H. P. Zhang

Abstract: We perform experiments on an active chiral fluid system of self-spinning rotors in confining boundary. Along the boundary, actively rotating rotors collectively drives a unidirectional material flow. We systematically vary rotor density and boundary shape; boundary flow robustly emerges under all conditions. Flow strength initially increases then decreases with rotor density (quantified by area fr… ▽ More We perform experiments on an active chiral fluid system of self-spinning rotors in confining boundary. Along the boundary, actively rotating rotors collectively drives a unidirectional material flow. We systematically vary rotor density and boundary shape; boundary flow robustly emerges under all conditions. Flow strength initially increases then decreases with rotor density (quantified by area fraction $φ$); peak strength appears around a density $φ=0.65$. Boundary curvature plays an important role: flow near a concave boundary is stronger than that near a flat or convex boundary in the same confinements. Our experimental results in all cases can be reproduced by a continuum theory with single free fitting parameter, which describes the frictional property of the boundary. Our results support the idea that boundary flow in active chiral fluid is topologically protected; such robust flow can be used to develop materials with novel functions. △ Less

Submitted 31 October, 2019; originally announced October 2019.

Comments: 14 pages, 5 figures

Journal ref: Phys. Rev. E 101, 022603 (2020)

Interdiffusion between gadolinia doped ceria and yttria stabilized zirconia in solid oxide fuel cells: experimental investigation and kinetic modeling

Authors: Huixia Xu, Kaiming Cheng, Ming Chen, Lijun Zhang, Karen Brodersen, Yong Du

Abstract: Interdiffusion between the yttria stabilized zirconia (YSZ) electrolyte and the gadolinia doped ceria (CGO) barrier layer is one of the major causes to the degradation of solid oxide fuel cells (SOFCs). We present in this work experimental investigations on CGO-YSZ bi-layer electrolyte sintered at 1250 C or 1315 C and element transport as a function of sintering temperature and dwelling time. In o… ▽ More Interdiffusion between the yttria stabilized zirconia (YSZ) electrolyte and the gadolinia doped ceria (CGO) barrier layer is one of the major causes to the degradation of solid oxide fuel cells (SOFCs). We present in this work experimental investigations on CGO-YSZ bi-layer electrolyte sintered at 1250 C or 1315 C and element transport as a function of sintering temperature and dwelling time. In order to quantitatively simulate the experimental observations, the CALPHAD-type thermodynamic assessment of the CGO-YSZ system is performed by simplifying the system to a CeO2-ZrO2 quasi-binary system, and the kinetic descriptions (atomic mobilities) are constructed based on critical review of literature data. The CGO-YSZ interdiffusion is then modeled with the DICTRA software and the simulation results are compared with the experimental data under different sintering or long-term operating conditions. The corresponding ohmic resistance of the bi-layer electrolyte is predicted based on the simulated concentration profile. The results implies that the interdiffusion across the CGO-YSZ interface happens mainly during sintering at high temperature, while during long-term operation at relatively lower temperature the impact of interdiffusion on cell degradation is negligible. △ Less

Submitted 21 November, 2019; v1 submitted 25 October, 2019; originally announced October 2019.

Comments: Postprint, 30 pages, 8 figures

Journal ref: Journal of Power Sources, 441 227152 (2019)

Role of ferroelectric polarization during growth of highly strained ferroelectrics revealed by in-situ x-ray diffraction

Authors: Rui Liu, Jeffrey G. Ulbrandt, Hsiang-Chun Hsing, Anna Gura, Benjamin Bein, Alec Sun, Charles Pan, Giulia Bertino, Amanda Lai, Kaize Cheng, Eli Doyle, Kenneth Evans-Lutterodt, Randall L. Headrick, Matthew Dawber

Abstract: Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical prope… ▽ More Strain engineering of perovskite oxide thin films has proven to be an extremely powerful method for enhancing and inducing ferroelectric behavior. In ferroelectric thin films and superlattices, the polarization is intricately linked to crystal structure, but we show here that it can also play an important role in the growth process, influencing growth rates, relaxation mechanisms, electrical properties and domain structures. We have studied this effect in detail by focusing on the properties of BaTiO$_{3}$ thin films grown on very thin layers of PbTiO$_{3}$ using a combination of x-ray diffraction, piezoforce microscopy, electrical characterization and rapid in-situ x-ray diffraction reciprocal space maps during the growth using synchrotron radiation. Using a simple model we show that the changes in growth are driven by the energy cost for the top material to sustain the polarization imposed upon it by the underlying layer, and these effects may be expected to occur in other multilayer systems where polarization is present during growth. Our research motivates the concept of polarization engineering during the growth process as a new and complementary approach to strain engineering. △ Less

Submitted 26 September, 2019; originally announced September 2019.

Synthesis and physical properties of CeRu$_2$As$_2$ and CeIr$_2$As$_2$

Authors: Kangqiao Cheng, Xiaobo He, Haiyang Yang, Binjie Zhou, Yuke Li, Yongkang Luo

Abstract: We studied the physical properties of two Kondo-lattice compounds, CeRu$_2$As$_2$ and CeIr$_2$As$_2$, by a combination of electric transport, magnetic and thermodynamic measurements. They are of ThCr$_2$Si$_2$-type and CaBe$_2$Ge$_2$-type crystalline structures, respectively. CeRu$_2$As$_2$ shows localized long-range antiferromagnetic ordering below $T_N$=4.3 K, with a moderate electronic Sommerfe… ▽ More We studied the physical properties of two Kondo-lattice compounds, CeRu$_2$As$_2$ and CeIr$_2$As$_2$, by a combination of electric transport, magnetic and thermodynamic measurements. They are of ThCr$_2$Si$_2$-type and CaBe$_2$Ge$_2$-type crystalline structures, respectively. CeRu$_2$As$_2$ shows localized long-range antiferromagnetic ordering below $T_N$=4.3 K, with a moderate electronic Sommerfeld coefficient $γ_0$=35 mJ/mol$\cdot$K$^2$. A field-induced metamagnetic transition is observed near 2 T below $T_N$. Magnetic susceptibility measurements on aligned CeRu$_2$As$_2$ powders suggest that it has an easy axis and that the cerium moments align uniaxially along $\mathbf{c}$ axis. In contrast, CeIr$_2$As$_2$ is a magnetically nonordered heavy-fermion metal with enhanced $γ_0$$>$300 mJ/mol$\cdot$K$^2$. The initial onset Kondo temperatures of the two compounds are respectively 6 K and 30 K. We discuss the role of the crystal structure to the strength of Kondo coupling. This work provides two new dense Kondo-lattice materials for further investigations on electronic correlation, quantum criticality and heavy-electron effects. △ Less

Submitted 14 November, 2019; v1 submitted 10 September, 2019; originally announced September 2019.

Comments: 8 pages, 5+2 figures, 1 table

Journal ref: Phys. Rev. B 100, 205121 (2019)

PrBi: Topology meets quadrupolar degrees of freedom

Authors: Xiaobo He, Chuanwen Zhao, Haiyang Yang, Jinhua Wang, Kangqiao Cheng, Shan Jiang, Lingxiao Zhao, Yuke Li, Chao Cao, Shun Wang, Zengwei Zhu, Yongkang Luo, Liang Li

Abstract: Novel materials incorporating electronic degrees of freedom other than charge, including spin, orbital or valley \textit{et al} have manifested themselves to be of the great interests and applicable potentials. Recently, the multipolar degrees of freedom have attracted remarkable attention in the electronic correlated effects. In this work, we systematically studied the transport, magnetic and the… ▽ More Novel materials incorporating electronic degrees of freedom other than charge, including spin, orbital or valley \textit{et al} have manifested themselves to be of the great interests and applicable potentials. Recently, the multipolar degrees of freedom have attracted remarkable attention in the electronic correlated effects. In this work, we systematically studied the transport, magnetic and thermodynamic properties of the topological semimetal candidate PrBi in the framework of crystalline electric field theory. Our results demonstrate the $Γ_3$ non-Kramers doublet as the ground state of Pr$^{3+}$ (4$f^2$) ions. This ground state is nonmagnetic but carries a non-zero quadrupolar moment $\langle\hat{O}_2^0\rangle$. A quadrupolar phase transition is inferred below 0.08 K. No obvious quadrupolar Kondo effect can be identified. Ultrahigh-field quantum oscillation measurements confirm PrBi as a semimetal with non-trivial Berry phase and low total carrier density 0.06 /f.u. We discuss the interplay between low carrier density and $4f^2$ quadrupolar moment, and ascribe the weak quadrupolar ordering and Kondo effect to consequences of the low carrier density. PrBi, thus, opens a new window to the physics of topology and strongly correlated effect with quadrupolar degrees of freedom in the low-carrier-density limit, evoking the need for a reexamination of the Nozières exhaustion problem in the context of multi-channel Kondo effect. △ Less

Submitted 6 February, 2020; v1 submitted 10 September, 2019; originally announced September 2019.

Comments: 8 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 101, 075106 (2020)

Realization of Kondo chain in CeCo$_2$Ga$_8$

Authors: Kangqiao Cheng, Le Wang, Yuanji Xu, Feng Yang, Haipeng Zhu, Jiezun Ke, Xiufang Lu, Zhengcai Xia, Junfeng Wang, Youguo Shi, Yifeng Yang, Yongkang Luo

Abstract: We revisited the anisotropy of the heavy-fermion material CeCo$_2$Ga$_8$ by measuring the electrical resistivity and magnetic susceptibility along all the principal $\mathbf{a}$-, $\mathbf{b}$- and $\mathbf{c}$-axes. Resistivity along $\mathbf{c}$-axis ($ρ_c$) shows clear Kondo coherence below about 17 K, while both $ρ_{a}$ and $ρ_{b}$ remain incoherent down to 2 K. The magnetic anisotropy is well… ▽ More We revisited the anisotropy of the heavy-fermion material CeCo$_2$Ga$_8$ by measuring the electrical resistivity and magnetic susceptibility along all the principal $\mathbf{a}$-, $\mathbf{b}$- and $\mathbf{c}$-axes. Resistivity along $\mathbf{c}$-axis ($ρ_c$) shows clear Kondo coherence below about 17 K, while both $ρ_{a}$ and $ρ_{b}$ remain incoherent down to 2 K. The magnetic anisotropy is well understood within the theoretical frame of crystalline electric field effect in combination with magnetic exchange interactions. We found the anisotropy ratio of these magnetic exchange interactions, $|J_{ex}^c/J_{ex}^{a,b}|$, reaches a large value of 4-5. We, therefore, firmly demonstrate that CeCo$_2$Ga$_8$ is a quasi-one-dimensional heavy-fermion compound both electrically and magnetically, and thus provide a realistic example of \textit{Kondo chain}. △ Less

Submitted 28 February, 2019; v1 submitted 2 January, 2019; originally announced January 2019.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. Materials 3, 021402 (2019)

Topological insulator Bi2Se3 films on rare earth iron garnets and their high-quality interfaces

Authors: C. C. Chen, K. H. M. Chen, Y. T. Fanchiang, C. C. Tseng, S. R. Yang, C. N. Wu, M. X. Guo, C. K. Cheng, C. T. Wu, M. Hong, J. Kwo

Abstract: The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with… ▽ More The integration of quantum materials like topological insulators (TIs) with magnetic insulators (MIs) has important technological implications for spintronics and quantum computing. Here we report excellent crystallinity of c-axis oriented epitaxial TI films Bi2Se3 grown on MI films, a rare earth iron garnet (ReIG), such as thulium iron garnet (Tm3Fe5O12, TmIG) by molecular beam epitaxy (MBE) with a Se-buffered low-temperature (SBLT) growth technique. We demonstrated a streaky reflection high-energy electron diffraction pattern starting from the very first quintuple layer of Bi2Se3, indicating the high-quality interface between TmIG and Bi2Se3, a prerequisite for studying interfacial exchange coupling effects. The strong interfacial exchange interaction was manifested by observations of anomalous Hall effect in the Bi2Se3/TmIG bilayer and a shift of ferromagnetic resonance field of TmIG induced by Bi2Se3. We have reproducibly grown high-quality Bi2Se3/ReIG and interfaces using this new TI growth method, which may be applied to grow other types of van der Waals (vdW) hetero-structures. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: 17 pages, 4 figures

Journal ref: Appl. Phys. Lett. 114, 031601 (2019)

Strong Visible Absorption and Photoluminescence of Titanic Acid Nanotubes by Hydrothermal Method

Authors: Baoli Tian, Xing Zhang, Shuxi Dai, Ke Cheng, Zhensheng Jin, Yabin Huang, Zuliang Du, Guangtian Zou, Bingsuo Zou

Abstract: Titanic acid nanotubes (with a chemical formula H2Ti2O4(OH)2, abbreviated as TANTs) were synthesized by the hydrothermal method using commercial TiO2 nanoparticle powder (P25, Degussa, Germany) including anatase and rutile phase as a starting material. Conversion from nanoparticles to nanotubes was achieved by treating the nanoparticle powder with 10 M NaOH aqueous solution. Absorption and photolu… ▽ More Titanic acid nanotubes (with a chemical formula H2Ti2O4(OH)2, abbreviated as TANTs) were synthesized by the hydrothermal method using commercial TiO2 nanoparticle powder (P25, Degussa, Germany) including anatase and rutile phase as a starting material. Conversion from nanoparticles to nanotubes was achieved by treating the nanoparticle powder with 10 M NaOH aqueous solution. Absorption and photoluminescence (PL) data indicate that the nanotubes obtained under slow and suitable drying and heating conditions had very strong and stable visible absorption with three peaks at 515, 575, and 675 nm and photoluminescence at room temperature in air. △ Less

Submitted 13 June, 2011; originally announced June 2011.

Comments: 4 pages, 6 figures

Journal ref: Journal of physical chemistry. C , 2008, vol. 112, no14, pp. 5361-5364

Probing semiclassical magneto-oscillations in the low-field quantum Hall effect

Authors: D. R. Hang, C. F. Huang, K. A. Cheng

Abstract: The low-field quantum Hall effect is investigated on a two-dimensional electron system in an AlGaAs/GaAs heterostructure. Magneto-oscillations following the semiclassical Shubnikov-de Haas formula are observed even when the emergence of the mobility gap shows the importance of quantum localization effects. Moreover, the Lifshitz-Kosevich formula can survive as the oscillating amplitude becomes l… ▽ More The low-field quantum Hall effect is investigated on a two-dimensional electron system in an AlGaAs/GaAs heterostructure. Magneto-oscillations following the semiclassical Shubnikov-de Haas formula are observed even when the emergence of the mobility gap shows the importance of quantum localization effects. Moreover, the Lifshitz-Kosevich formula can survive as the oscillating amplitude becomes large enough for the deviation to the Dingle factor. The crossover from the semiclassical transport to the description of quantum diffusion is discussed. From our study, the difference between the mobility and cyclotron gaps indicates that some electron states away from the Landau-band tails can be responsible for the semiclassical behaviors under low-field Landau quantization. △ Less

Submitted 18 April, 2009; originally announced April 2009.

Comments: 14 pages, 6 figures

Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system

Authors: Kuang Yao Chen, Y. H. Chang, C. -T. Liang, N. Aoki, Y. Ochiai, C. F. Huang, Li-Hung Lin, K. A. Cheng, H. H. Cheng, H. H. Lin, Jau-Yang Wu, Sheng-Di Lin

Abstract: Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and tra… ▽ More Magneto-transport measurements are performed on the two-dimensional electron system (2DES) in an AlGaAs/GaAs heterostructure. By increasing the magnetic field perpendicular to the 2DES, magnetoresistivity oscillations due to Landau quantisation can be identified just near the direct insulator-quantum Hall (I-QH) transition. However, different mobilities are obtained from the oscillations and transition point. Our study shows that the direct I-QH transition does not always correspond to the onset of strong localisation. △ Less

Submitted 11 February, 2008; originally announced February 2008.

Comments: 11 pages, 7 figures

Journal ref: J. Phys.: Condens. Matter 20 (2008) 295223.

Characterization of one-dimensional quantum channels in InAs/AlSb

Authors: C. H. Yang, M. J. Yang, K. A. Cheng, J. C. Culbertson

Abstract: We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong latera… ▽ More We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width. △ Less

Submitted 13 August, 2002; originally announced August 2002.

Comments: pdf-file, 8 figures, to be published in Phys. Rev. B

Quantum Beating in Ring Conductance: Observation of Spin Chiral States and Berry's phase

Authors: M. J. Yang, C. H. Yang, K. A. Cheng, Y. B. Lyanda-Geller

Abstract: Using singly connected rings with a collimating contact to current leads, we have observed the spin quantum beating in the Aharonov-Bohm conductance oscillations. We demonstrate that the beating is a result of the superposition of two independent interference patterns associated with two orthogonal spin chiral states arising from intrinsic spin-orbit interactions. Our work provides the conclusiv… ▽ More Using singly connected rings with a collimating contact to current leads, we have observed the spin quantum beating in the Aharonov-Bohm conductance oscillations. We demonstrate that the beating is a result of the superposition of two independent interference patterns associated with two orthogonal spin chiral states arising from intrinsic spin-orbit interactions. Our work provides the conclusive evidence of the spin Berry's phase in the conductance of quantum rings. △ Less

Submitted 15 August, 2002; v1 submitted 13 August, 2002; originally announced August 2002.

Comments: pdf-file, 4 figures attached, submitted to Physical Review Letters

Statistics Of The Burst Model At Super-critical Phase

Authors: T. C. Chan, H. F. Chau, K. S. Cheng

Abstract: We investigate the statistics of a model of type-I X-ray burst [Phys. Rev. E, {\bf 51}, 3045 (1995)] in its super-critical phase. The time evolution of the burnable clusters, places where fire can pass through, is studied using simple statistical arguments. We offer a simple picture for the time evolution of the percentage of space covered by burnable clusters. A relation between the time-averag… ▽ More We investigate the statistics of a model of type-I X-ray burst [Phys. Rev. E, {\bf 51}, 3045 (1995)] in its super-critical phase. The time evolution of the burnable clusters, places where fire can pass through, is studied using simple statistical arguments. We offer a simple picture for the time evolution of the percentage of space covered by burnable clusters. A relation between the time-average and the peak percentage of space covered by burnable clusters is also derived. △ Less

Submitted 24 July, 1995; originally announced July 1995.

Comments: 11 Pages in Revtex 3.0. Two figures available by sending request to [email protected]

Report number: IASSNS-HEP-95/62

A Cellular Automaton Model for Diffusive and Dissipative Systems

Authors: T. C. Chan, H. F. Chau, K. S. Cheng

Abstract: We study a cellular automaton model, which allows diffusion of energy (or equivalently any other physical quantities such as mass of a particular compound) at every lattice site after each timestep. Unit amount of energy is randomly added onto a site. Whenever the local energy content of a site reaches a fixed threshold $E_{c1}$, energy will be dissipated. Dissipation of energy propagates to the… ▽ More We study a cellular automaton model, which allows diffusion of energy (or equivalently any other physical quantities such as mass of a particular compound) at every lattice site after each timestep. Unit amount of energy is randomly added onto a site. Whenever the local energy content of a site reaches a fixed threshold $E_{c1}$, energy will be dissipated. Dissipation of energy propagates to the neighboring sites provided that the energy contents of those sites are greater than or equal to another fixed threshold $E_{c2} (\leq E_{c1})$. Under such dynamics, the system evolves into three different types of states depending on the values of $E_{c1}$ and $E_{c2}$ as reflected in their dissipation size distributions, namely: localized peaks, power laws, or exponential laws. This model is able to describe the behaviors of various physical systems including the statistics of burst sizes and burst rates in type-I X-ray bursters. Comparisons between our model and the famous forest-fire model (FFM) are made. △ Less

Submitted 22 January, 1995; v1 submitted 4 October, 1994; originally announced October 1994.

Comments: in REVTEX 3.0. Figures available on request. Extensively revised. Accepted by Phys.Rev.E