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Terahertz-infrared dielectric properties of lead-aluminum double-cation substituted single-crystalline barium hexaferrite
Authors:
Asmaa Ahmed,
Anatoly S. Prokhorov,
Vladimir Anzin,
Denis Vinnik,
Sergei Ivanov,
Adam Stash,
Y. S. Chen,
Alexander Bush,
Boris Gorshunov,
Liudmila Alyabyeva
Abstract:
Hexaferrite materials are highly demanded to develop and manufacture electronic devices operating at radio- and microwave frequencies. In the light of the prospects for their use in the forthcoming terahertz electronics, here, we present our results on the terahertz and infrared dielectric response of a typical representative of hexaferrites family, lead-substituted M-type barium hexaferrite doped…
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Hexaferrite materials are highly demanded to develop and manufacture electronic devices operating at radio- and microwave frequencies. In the light of the prospects for their use in the forthcoming terahertz electronics, here, we present our results on the terahertz and infrared dielectric response of a typical representative of hexaferrites family, lead-substituted M-type barium hexaferrite doped with aluminum, Ba0.2Pb0.8AlxFe12-xO19, x(Al)=0.0, 3.0, and 3.3. We studied uniquely large and high-quality single crystals of the. Systematic and detailed investigations of the dependences of terahertz-infrared (frequencies 8 - 8000 cm-1) spectra of complex dielectric permittivity on the temperature, 4 - 300 K, and on the chemical composition, x(Al)=0.0, 1.2, 3.0, 3.3, were performed for polarizations of the electric field E-vector of the probing radiation normal and parallel to the crystallographic c-axis. A number of resonance absorption bands are discovered at infrared-terahertz frequencies and assigned to polar phonons and transitions between energy levels of the fine-structured ground state of Fe2+ (5E) ions. In contrast to undoped BaFe12O19, no softening of the lowest frequency A2u phonon is observed, indicating suppression of a displacive phase transition in substituted compounds. Basing on dielectric data and detailed X-ray experiments, we find that for all concentrations of Al3+ ions, x(Al)=0.0, 1.2, 3.0, and 3.3, they mainly occupy the 2a and 12k octahedral site positions and that the degree of substitution of iron in tetrahedral positions is not substantial. Along with fundamental findings, the obtained data on broad-band dielectric properties of Ba0.2Pb0.8AlxFe12-xO19 crystals provides the information that can be used for development and manufacture of electronic devices with operating frequencies lying in the terahertz spectral band.
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Submitted 19 August, 2021;
originally announced August 2021.
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arXiv:2002.12465
[pdf]
physics.chem-ph
cond-mat.mes-hall
cond-mat.mtrl-sci
physics.optics
quant-ph
Optical projection and spatial separation of spin entangled triplet-pairs from the S1 (21Ag-) state of pi-conjugated systems
Authors:
Raj Pandya,
Qifei Gu,
Alexandre Cheminal,
Richard Y. S. Chen,
Edward P. Booker,
Richard Soucek,
Michel Schott,
Laurent Legrand,
Fabrice Mathevet,
Neil C. Greenham,
Thierry Barisien,
Andrew J. Musser,
Alex W. Chin,
Akshay Rao
Abstract:
The S1 (21Ag-) state is an optically dark state of natural and synthetic pi-conjugated materials that can play a critical role in optoelectronic processes such as, energy harvesting, photoprotection and singlet fission. Despite this widespread importance, direct experimental characterisations of the electronic structure of the S1 (21Ag-) wavefunction have remained scarce and uncertain, although ad…
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The S1 (21Ag-) state is an optically dark state of natural and synthetic pi-conjugated materials that can play a critical role in optoelectronic processes such as, energy harvesting, photoprotection and singlet fission. Despite this widespread importance, direct experimental characterisations of the electronic structure of the S1 (21Ag-) wavefunction have remained scarce and uncertain, although advanced theory predicts it to have a rich multi-excitonic character. Here, studying an archetypal polymer, polydiacetylene, and carotenoids, we experimentally demonstrate that S1 (21Ag-) is a superposition state with strong contributions from spin-entangled pairs of triplet excitons (1(TT)). We further show that optical manipulation of the S1 (21Ag-) wavefunction using triplet absorption transitions allows selective projection of the 1(TT) component into a manifold of spatially separated triplet-pairs with lifetimes enhanced by up to one order of magnitude and whose yield is strongly dependent on the level of inter-chromophore coupling. Our results provide a unified picture of 21Ag-states in pi-conjugated materials and open new routes to exploit their dynamics in singlet fission, photobiology and for the generation of entangled (spin-1) particles for molecular quantum technologies.
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Submitted 6 January, 2021; v1 submitted 27 February, 2020;
originally announced February 2020.
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Ultrafast Tracking of Exciton and Charge Carrier Transport in Optoelectronic Materials on the Nanometer Scale
Authors:
Christoph Schnedermann,
Jooyoung Sung,
Raj Pandya,
Sachin Dev Verma,
Richard Y. S. Chen,
Nicolas Gauriot,
Hope M. Bretscher,
Philipp Kukura,
Akshay Rao
Abstract:
We present a novel optical transient absorption and reflection microscope based on a diffraction-limited pump pulse in combination with a wide-field probe pulse, for the spatio-temporal investigation of ultrafast population transport in thin films. The microscope achieves a temporal resolution down to 12 fs and simultaneously provides sub-10 nm spatial accuracy. We demonstrate the capabilities of…
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We present a novel optical transient absorption and reflection microscope based on a diffraction-limited pump pulse in combination with a wide-field probe pulse, for the spatio-temporal investigation of ultrafast population transport in thin films. The microscope achieves a temporal resolution down to 12 fs and simultaneously provides sub-10 nm spatial accuracy. We demonstrate the capabilities of the microscope by revealing an ultrafast excited-state exciton population transport of up to 32 nm in a thin film of pentacene and by tracking the carrier motion in p-doped silicon. The use of few-cycle optical excitation pulses enables impulsive stimulated Raman micro-spectroscopy, which is used for in-situ verification of the chemical identity in the 100 - 2000 cm-1 spectral window. Our methodology bridges the gap between optical microscopy and spectroscopy allowing for the study of ultrafast transport properties down to the nanometer length scale.
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Submitted 11 December, 2019;
originally announced December 2019.
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Visible light enhanced field effect at LaAlO3/SrTiO3 interface
Authors:
Y. Lei,
Y. Z. Chen,
Y. W. Xie,
Y. Li,
Y. S. Chen,
S. H. Wang,
J. Wang,
B. G. Shen,
N. Pryds,
H. Y. Hwang,
J. R. Sun
Abstract:
Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a qu…
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Electrical field and light-illumination have been two most widely used stimuli in tuning the conductivity of semiconductor devices. Via capacitive effect electrical field modifies the carrier density of the devices, while light-illumination generates extra carriers by exciting trapped electrons into conduction band1. Here, we report on an unexpected light illumination enhanced field effect in a quasi-two-dimensional electron gas (q2DEG) confined at the LaAlO3/SrTiO3 (LAO/STO) interface which has been the focus of emergent phenomenon exploration2-14. We found that light illumination greatly accelerates and amplifies the field effect, driving the field-induced resistance growth which originally lasts for thousands of seconds into an abrupt resistance jump more than two orders of magnitude. Also, the field-induced change in carrier density is much larger than that expected from the capacitive effect, and can even be opposite to the conventional photoelectric effect. This work expands the space for novel effect exploration and multifunctional device design at complex oxide interfaces.
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Submitted 23 May, 2014;
originally announced May 2014.
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Scaling theory of continuum dislocation dynamics in three dimensions: Self-organized fractal pattern formation
Authors:
Yong S. Chen,
Woosong Choi,
Stefanos Papanikolaou,
Matthew Bierbaum,
James P. Sethna
Abstract:
We focus on mesoscopic dislocation patterning via a continuum dislocation dynamics theory (CDD) in three dimensions (3D). We study three distinct physically motivated dynamics which consistently lead to fractal formation in 3D with rather similar morphologies, and therefore we suggest that this is a general feature of the 3D collective behavior of geometrically necessary dislocation (GND) ensemble…
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We focus on mesoscopic dislocation patterning via a continuum dislocation dynamics theory (CDD) in three dimensions (3D). We study three distinct physically motivated dynamics which consistently lead to fractal formation in 3D with rather similar morphologies, and therefore we suggest that this is a general feature of the 3D collective behavior of geometrically necessary dislocation (GND) ensembles. The striking self-similar features are measured in terms of correlation functions of physical observables, such as the GND density, the plastic distortion, and the crystalline orientation. Remarkably, all these correlation functions exhibit spatial power-law behaviors, sharing a single underlying universal critical exponent for each type of dynamics.
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Submitted 8 January, 2013; v1 submitted 1 June, 2011;
originally announced June 2011.
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Is dislocation flow turbulent in deformed crystals?
Authors:
Woosong Choi,
Yong S. Chen,
Stefanos Papanikolaou,
James P. Sethna
Abstract:
Intriguing analogies were found between a model of plastic deformation in crystals and turbulence in fluids. A study of this model provides remarkable explanations of known experiments and predicts fractal dislocation pattern formation. Further, the challenges encountered resemble those in turbulence, which is exemplified in a comparison with the Rayleigh-Taylor instability.
Intriguing analogies were found between a model of plastic deformation in crystals and turbulence in fluids. A study of this model provides remarkable explanations of known experiments and predicts fractal dislocation pattern formation. Further, the challenges encountered resemble those in turbulence, which is exemplified in a comparison with the Rayleigh-Taylor instability.
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Submitted 18 January, 2012; v1 submitted 26 May, 2011;
originally announced May 2011.
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Bending crystals: Emergence of fractal dislocation structures
Authors:
Yong S. Chen,
Woosong Choi,
Stefanos Papanikolaou,
James P. Sethna
Abstract:
We provide a minimal continuum model for mesoscale plasticity, explaining the cellular dislocation structures observed in deformed crystals. Our dislocation density tensor evolves from random, smooth initial conditions to form self-similar structures strikingly similar to those seen experimentally - reproducing both the fractal morphologies and some features of the scaling of cell sizes and misori…
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We provide a minimal continuum model for mesoscale plasticity, explaining the cellular dislocation structures observed in deformed crystals. Our dislocation density tensor evolves from random, smooth initial conditions to form self-similar structures strikingly similar to those seen experimentally - reproducing both the fractal morphologies and some features of the scaling of cell sizes and misorientations analyzed experimentally. Our model provides a framework for understanding emergent dislocation structures on the mesoscale, a bridge across a computationally demanding mesoscale gap in the multiscale modeling program, and a new example of self-similar structure formation in non-equilibrium systems.
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Submitted 18 August, 2010; v1 submitted 28 January, 2010;
originally announced January 2010.
