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Spontaneous exciton dissociation enables spin state interconversion in delayed fluorescence organic semiconductors
Authors:
Alexander J. Gillett,
Claire Tonnelé,
Giacomo Londi,
Gaetano Ricci,
Manon Catherin,
Darcy M. L. Unson,
David Casanova,
Frédéric Castet,
Yoann Olivier,
Weimin M. Chen,
Elena Zaborova,
Emrys W. Evans,
Bluebell H. Drummond,
Patrick J. Conaghan,
Lin-Song Cui,
Neil C. Greenham,
Yuttapoom Puttisong,
Frédéric Fages,
David Beljonne,
Richard H. Friend
Abstract:
Engineering a low singlet-triplet energy gap (ΔEST) is necessary for efficient reverse intersystem crossing (rISC) in delayed fluorescence (DF) organic semiconductors, but results in a small radiative rate that limits performance in LEDs. Here, we study a model DF material, BF2, that exhibits a strong optical absorption (absorption coefficient =3.8x10^5 cm^-1) and a relatively large ΔEST of 0.2 eV…
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Engineering a low singlet-triplet energy gap (ΔEST) is necessary for efficient reverse intersystem crossing (rISC) in delayed fluorescence (DF) organic semiconductors, but results in a small radiative rate that limits performance in LEDs. Here, we study a model DF material, BF2, that exhibits a strong optical absorption (absorption coefficient =3.8x10^5 cm^-1) and a relatively large ΔEST of 0.2 eV. In isolated BF2 molecules, intramolecular rISC is slow (260 μs), but in aggregated films, BF2 generates intermolecular CT (inter-CT) states on picosecond timescales. In contrast to the microsecond intramolecular rISC that is promoted by spin-orbit interactions in most isolated DF molecules, photoluminescence-detected magnetic resonance shows that these inter-CT states undergo rISC mediated by hyperfine interactions on a ~24 ns timescale and have an average electron-hole separation of >1.5 nm. Transfer back to the emissive singlet exciton then enables efficient DF and LED operation. Thus, access to these inter-CT states resolves the conflicting requirements of fast radiative emission and low ΔEST.
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Submitted 29 June, 2021;
originally announced June 2021.
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Electron paramagnetic resonance signatures of Co2+ and Cu2+ in b-Ga2O3
Authors:
Jan E. Stehr,
Detlev M. Hofmann,
Weimin M. Chen,
Irina A. Buyanova
Abstract:
Gallium oxide (b-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ~ 4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices and power electronics. However, all of these applications require a reliable and precise control of electrical and optical properties of the material, which can…
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Gallium oxide (b-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ~ 4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices and power electronics. However, all of these applications require a reliable and precise control of electrical and optical properties of the material, which can be largely affected by impurities, such as transition metals commonly present during the growth. In this work we employ electron paramagnetic resonance (EPR) spectroscopy to obtain EPR signatures of the 3d-transition metals Co2+ and Cu2+ in b-Ga2O3 bulk crystals and powders that were unknown so far. Furthermore, we show that Co2+ and Cu2+ both preferentially reside on the octahedral gallium lattice site.
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Submitted 12 September, 2019;
originally announced September 2019.
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Measurements of strain and bandgap of coherently epitaxially grown wurtzite InAsP-InP core-shell nanowires
Authors:
D. J. O. Göransson,
M. T. Borgström,
Y. Q. Huang,
M. E. Messing,
D. Hessman,
I. A. Buyanova,
W. M. Chen,
H. Q. Xu
Abstract:
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence ($μ$PL) spectroscopy and micro-Raman ($μ$-Raman) spectroscopy measurements. W…
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We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence ($μ$PL) spectroscopy and micro-Raman ($μ$-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained, with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core-shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the $μ$PL measurements of individual core-shell nanowires. The coherently strained core-shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.
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Submitted 12 April, 2019;
originally announced April 2019.
