Skip to main content

Showing 1–3 of 3 results for author: Chen, W M

Searching in archive cond-mat. Search in all archives.
.
  1. arXiv:2106.15512  [pdf

    physics.app-ph cond-mat.mtrl-sci

    Spontaneous exciton dissociation enables spin state interconversion in delayed fluorescence organic semiconductors

    Authors: Alexander J. Gillett, Claire Tonnelé, Giacomo Londi, Gaetano Ricci, Manon Catherin, Darcy M. L. Unson, David Casanova, Frédéric Castet, Yoann Olivier, Weimin M. Chen, Elena Zaborova, Emrys W. Evans, Bluebell H. Drummond, Patrick J. Conaghan, Lin-Song Cui, Neil C. Greenham, Yuttapoom Puttisong, Frédéric Fages, David Beljonne, Richard H. Friend

    Abstract: Engineering a low singlet-triplet energy gap (ΔEST) is necessary for efficient reverse intersystem crossing (rISC) in delayed fluorescence (DF) organic semiconductors, but results in a small radiative rate that limits performance in LEDs. Here, we study a model DF material, BF2, that exhibits a strong optical absorption (absorption coefficient =3.8x10^5 cm^-1) and a relatively large ΔEST of 0.2 eV… ▽ More

    Submitted 29 June, 2021; originally announced June 2021.

    Comments: 102 pages, 4 main-text figures

  2. arXiv:1909.05781  [pdf

    cond-mat.mtrl-sci

    Electron paramagnetic resonance signatures of Co2+ and Cu2+ in b-Ga2O3

    Authors: Jan E. Stehr, Detlev M. Hofmann, Weimin M. Chen, Irina A. Buyanova

    Abstract: Gallium oxide (b-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ~ 4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices and power electronics. However, all of these applications require a reliable and precise control of electrical and optical properties of the material, which can… ▽ More

    Submitted 12 September, 2019; originally announced September 2019.

    Comments: 13 pages, 3 figures

  3. Measurements of strain and bandgap of coherently epitaxially grown wurtzite InAsP-InP core-shell nanowires

    Authors: D. J. O. Göransson, M. T. Borgström, Y. Q. Huang, M. E. Messing, D. Hessman, I. A. Buyanova, W. M. Chen, H. Q. Xu

    Abstract: We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence ($μ$PL) spectroscopy and micro-Raman ($μ$-Raman) spectroscopy measurements. W… ▽ More

    Submitted 12 April, 2019; originally announced April 2019.

    Comments: 18 pages, 5 figures, Supporting Information

    Journal ref: Nano Letters 19, 2674 (2019)