Showing 1–8 of 8 results for author: Chen, J K

Large non-reciprocal charge transport in Pt2MnGe up to room temperature

Authors: K. K. Meng, K. Wang, N. N. Zhang, Z. G. Fu, J. K. Chen, Y. Wu, X. G. Xu, J. Miao, Y. Jiang

Abstract: Non-reciprocal charge transport that is strongly associated with the structural or magnetic chirality of the quantum materials system is one of the most exotic properties of condensed matter physics. Here, using magnetic alloys film Pt2MnGe, we have realized the large non-reciprocal charge transport up to room temperature, which roots in the organic combination of chirality dependent carrier scatt… ▽ More Non-reciprocal charge transport that is strongly associated with the structural or magnetic chirality of the quantum materials system is one of the most exotic properties of condensed matter physics. Here, using magnetic alloys film Pt2MnGe, we have realized the large non-reciprocal charge transport up to room temperature, which roots in the organic combination of chirality dependent carrier scattering and special magnetic configurations. In this framework, the conduction electrons are scattered asymmetrically by the emerging non-zero vector spin chirality under in-plane magnetic field, resulting in robust non-reciprocal response. More astonishingly, the vector spin chirality in Pt2MnGe film can be reversed by a spin-polarized current through spin Hall effect in a junction with Pt layer. Our work resolves the general limitation of non-reciprocal charge transport to cryogenic temperatures, and paves the way for extending its applications in the emerging field of chiral spintronics. △ Less

Submitted 16 June, 2022; originally announced June 2022.

Interface-driven electrical magnetochiral anisotropy in Pt/PtMnGa bilayers

Authors: K. K. Meng, J. K. Chen, J. Miao, X. G. Xu, Y. Jiang

Abstract: Nonreciprocal charge transport, which is frequently termed as electrical magnetochiral anisotropy (EMCA) in chiral conductors, touches the most important elements of modern condensed matter physics. Here, we have investigated the EMCA in Pt/PtMnGa (PMG) bilayers with the assitance of nonequilibrium fluctuation theorems. Large EMCA in the Pt/PMG bilayers can be attributed to nonreciprocal response… ▽ More Nonreciprocal charge transport, which is frequently termed as electrical magnetochiral anisotropy (EMCA) in chiral conductors, touches the most important elements of modern condensed matter physics. Here, we have investigated the EMCA in Pt/PtMnGa (PMG) bilayers with the assitance of nonequilibrium fluctuation theorems. Large EMCA in the Pt/PMG bilayers can be attributed to nonreciprocal response of an interface-driven chiral transport channel. Due to the presence of large charge fluctuations for small current region, higher order EMCA coefficients should be added and they are all functions of current. A combination of asymmetrical electron scattering and spin-dependent scattering furnish the PMG thickness dependent chiral transport behaviors in Pt/PMG bilayers. The dramatically enhanced anomalous Hall angle of PMG further demonstrates the modified surface state properties by strong spin-orbit coupling. △ Less

Submitted 13 April, 2021; v1 submitted 6 November, 2020; originally announced November 2020.

Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction

Authors: Q. Liu, J. Miao, Z. D. Xu, P. F. Liu, Q. H. Zhang, L. Gu, K. K. Meng, X. G. Xu, J. K. Chen, Y. Wu, Y. Jiang

Abstract: Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide four distinct resistive states in a single memory cell. Here we show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3 /La0.7Te0.3MnO3 (LSMO/… ▽ More Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide four distinct resistive states in a single memory cell. Here we show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3 /La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p-type and n-type electrodes, the intrinsic rectification is observed and can be modified by the ferroelectric polarization of PZT. Owing to the combined TMR, TER and diode effects, two different groups of four resistive states under opposite reading biases are performed. With two parallel asymmetric junctions and the appropriate series resistance, the coexistence of logic units and quaternary memory cells can be realized in the same array devices. The asymmetric MFTJ structure enables more possibilities for designing next generation of multi-states memory and logical devices with higher storage density, lower energy consumption and significantly increased integration level. △ Less

Submitted 24 June, 2019; originally announced June 2019.

Controlling spin-orbit torque by polarization field in multiferroic BiFeO3 based heterostructures

Authors: P. F. Liu, J. Miao, Q. Liu, Z. D. Xu, Z. Y. Ren, K. K. Meng, Y. Wu, J. K. Chen, X. G. Xu, Y. Jiang

Abstract: In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is being intensely pursued. Especially, how to control the switching current density, which is expected to enrich device functionalities, has aroused much interes… ▽ More In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is being intensely pursued. Especially, how to control the switching current density, which is expected to enrich device functionalities, has aroused much interest among researchers all over the world. In this paper, a novel method to adjust the switching current is proposed, and the BiFeO3 (BFO) based heterostructures with opposite spontaneous polarizations fields show huge changes in both perpendicular magnetic anisotropy and the SOT-induced magnetization switching. The damping-like torques were estimated by using harmonic Hall voltage measurement, and the variation of effective spin Hall angles for the heterostructures with opposite polarizations was calculated to be 272%. At the end of this paper, we have also demonstrated the possible applications of our structure in memory and reconfigurable logic devices. △ Less

Submitted 25 March, 2019; originally announced March 2019.

Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer

Authors: Yang Ji, J. Miao, K. K. Meng, X. G. Xu, J. K. Chen, Y. Wu, Y. Jiang

Abstract: The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta bilayers have been investigated. Temperature dependence of longitudinal and transverse resistances measurements confirm the relationship between SMR and AHE signals in Cr2O3/Ta structure. By means of temperature dependent magnetoresistance me… ▽ More The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) are observed in a Cr2O3/Ta structure. The structural and surface morphology of Cr2O3/Ta bilayers have been investigated. Temperature dependence of longitudinal and transverse resistances measurements confirm the relationship between SMR and AHE signals in Cr2O3/Ta structure. By means of temperature dependent magnetoresistance measurements, the physical origin of SMR in the Cr2O3/Ta structure is revealed, and the contribution to the SMR from the spin current generated by AHE has been proved. The so-called boundary magnetization due to the bulk antiferromagnetic order in Cr2O3 film may be responsible for the relationship of SMR and AHE in the Cr2O3/Ta bilayer. △ Less

Submitted 27 October, 2018; v1 submitted 4 June, 2018; originally announced June 2018.

Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region

Authors: Y. Ji, J. Miao, Y. M. Zhu, K. K. Meng, X. G. Xu, J. K. Chen, Y. Wu, Y. Jiang

Abstract: We investigate the observation of negative spin Hall magnetoresistance (SMR) in antiferromagnetic Cr2O3/Ta bilayers at low temperature. The sign of the SMR signals is changed from positive to negative monotonously from 300 K to 50 K. The change of the signs for SMR is related with the competitions between the surface ferromagnetism and bulky antiferromagnetic of Cr2O3. The surface magnetizations o… ▽ More We investigate the observation of negative spin Hall magnetoresistance (SMR) in antiferromagnetic Cr2O3/Ta bilayers at low temperature. The sign of the SMR signals is changed from positive to negative monotonously from 300 K to 50 K. The change of the signs for SMR is related with the competitions between the surface ferromagnetism and bulky antiferromagnetic of Cr2O3. The surface magnetizations of Cr2O3 (0001) is considered to be dominated at higher temperature, while the bulky antiferromagnetics gets to be robust with decreasing of temperature. The slopes of the abnormal Hall curves coincide with the signs of SMR, confirming variational interface magnetism of Cr2O3 at different temperature. From the observed SMR ratio under 3 T, the spin mixing conductance at Cr2O3/Ta interface is estimated to be 1.12*10^14 (ohm^-1*m^-2), which is comparable to that of YIG/Pt structures and our early results of Cr2O3/W. (Appl. Phys. Lett. 110, 262401 (2017)) △ Less

Submitted 8 January, 2018; originally announced January 2018.

Journal ref: Applied Physics Letters 112, 232404 (2018)

Micro- and Nanoscale Heat Transfer in Femtosecond Laser Processing of Metals

Authors: Yuwen Zhang, D. Y. Tzou, J. K. Chen

Abstract: Ultrafast laser material processing has received significant attention due to a growing need for the fabrication of miniaturized devices at micro- and nanoscales. The traditional phenomenological laws, such as Fourier's law of heat conduction, are challenged in the microscale regime and a hyperbolic or dual phase lag model should be employed. During ultrafast laser interaction with metal, the elec… ▽ More Ultrafast laser material processing has received significant attention due to a growing need for the fabrication of miniaturized devices at micro- and nanoscales. The traditional phenomenological laws, such as Fourier's law of heat conduction, are challenged in the microscale regime and a hyperbolic or dual phase lag model should be employed. During ultrafast laser interaction with metal, the electrons and lattices are not in equilibrium. Various two-temperature models that can be used to describe the nonequilibrium heat transfer are presented. A semi-classical two-step heating model to investigate thermal transport in metals caused by ultrashort laser heating is also presented. The main difference between the semiclassical and the phenomenological two-temperature models is that the former includes the effects of electron drifting, which could result in significantly different electron and lattice temperature response from the latter for higher-intensity and shorter-pulse laser heating. Under higher laser fluence and/or short pulse, the lattice temperature can exceed the melting point and melting takes place. The liquid phase will be resolidified when the lattice is cooled by conducting heat away. Ultrafast melting and resolidification of the thin gold film and microparticles were investigated. At even shorter pulse width, femtosecond laser heating on metals produces a blasting force from hot electrons in the sub-picosecond domain, which exerts on the metal lattices along with the non-equilibrium heat flow. Our work that employs the parabolic two-step heating model to study the effect of the hot-electron blast in multi-layered thin metal films is also presented. △ Less

Submitted 8 November, 2015; originally announced November 2015.

Journal ref: High-Power and Femtosecond Lasers: Properties, Materials and Applications, Barret, P.H., and Palmerm, M., eds., Nova Science Publishers, Inc., Hauppauge, NY, 2009, Chapter 5, pp. 159-206

Uncertainty Analysis of Melting and Resolidification of Gold Film Irradiated by Nano- to Femtosecond Lasers Using Stochastic Method

Authors: Nazia Afrin, Yuwen Zhang, J. K. Chen

Abstract: A sample-based stochastic model is presented to investigate the effects of uncertainties of various input parameters, including laser fluence, laser pulse duration, thermal conductivity constants for electron, and electron-lattice coupling factor, on solid-liquid phase change of gold film under nano- to femtosecond laser irradiation. Rapid melting and resolidification of a free standing gold film… ▽ More A sample-based stochastic model is presented to investigate the effects of uncertainties of various input parameters, including laser fluence, laser pulse duration, thermal conductivity constants for electron, and electron-lattice coupling factor, on solid-liquid phase change of gold film under nano- to femtosecond laser irradiation. Rapid melting and resolidification of a free standing gold film subject to nano- to femtosecond laser are simulated using a two-temperature model incorporated with the interfacial tracking method. The interfacial velocity and temperature are obtained by solving the energy equation in terms of volumetric enthalpy for control volume. The convergence of variance (COV) is used to characterize the variability of the input parameters, and the interquartile range (IQR) is used to calculate the uncertainty of the output parameters. The IQR analysis shows that the laser fluence and the electron-lattice coupling factor have the strongest influences on the interfacial location, velocity, and temperatures. △ Less

Submitted 18 February, 2016; v1 submitted 1 October, 2015; originally announced October 2015.

Journal ref: J. Heat Transfer, 138(6), p. 062301, 2016