Origin and the role of device physics in the magnetic field effect in organic semiconductor devices
Authors:
B. K. Li,
H. T. He,
W. J. Chen,
M. K. Lam,
K. W. Cheah,
J. N. Wang
Abstract:
A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest sur…
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A small magnetic field (~30 mT) can effectively modulate the electroluminescence, conductance and/or photocurrent of organic semiconductor based devices, up to 10% at room temperature. This organic magnetic field effect (OMFE) is one of the most unusual phenomena of both organic electronics and, more basically, magnetism, since all device components are nonmagnetic. However, in spite of latest surge of research interest, its underlying mechanism is still hotly debated. Here we experimentally identify that the magnetic field induced increase of intersystem crossing rate (between either excitons or polaron pairs), and decrease of triplet exciton-polaron quenching rate are responsible for the observed OMFEs. The diversity of observed OMFE results, such as sign change and operating condition dependence, originates from the difference of devices physics.
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Submitted 24 March, 2010;
originally announced March 2010.
Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
Authors:
C. C. Ling,
W. K. Mui,
C. H. Lam,
C. D. Beling,
S. Fung,
M. K. Lui,
K. W. Cheah,
K. F. Li,
Y. W. Zhao,
M. Gong
Abstract:
Positron lifetime, Photoluminescence and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314ps lifetime component, attributed to $V_{Ga}$ related defect, was identified in the positron lifetime measurement. In the PL measurement, a $778meV$ and a $797meV$ peaks were observed. Isochronal annealing studies were performed and at the temperature of…
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Positron lifetime, Photoluminescence and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314ps lifetime component, attributed to $V_{Ga}$ related defect, was identified in the positron lifetime measurement. In the PL measurement, a $778meV$ and a $797meV$ peaks were observed. Isochronal annealing studies were performed and at the temperature of $300^{o}C$, both the 314ps positron lifetime component and the two PL signals disappeared, which gives a clear and strong evidence for their correlation. However, the hole concentration ($\sim 2\times 10^{17}cm^{-3}$) was observed to be constant throughout the whole annealing temperature range up to $500^{o}C$. Contradictory to general belief, this implies, at least for samples with annealing temperatures above $300^{o}C$, the Ga vacancy is not the acceptor responsible for the p-type conduction.
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Submitted 17 January, 2002;
originally announced January 2002.
