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Vapor-liquid-solid growth of highly-mismatched semiconductor nanowires with high-fidelity van der Waals layer stacking
Authors:
Edy Cardona,
Matthew K. Horton,
Daniel Paulo-Wach,
Anthony C. Salazar,
Andre Palacios Duran,
James Chavez,
Shaul Aloni,
Junqiao Wu,
Oscar D. Dubon
Abstract:
Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered alloys made from the gallium monochalcogenides GaS, GaSe, and GaTe, near-continuous tuning of the energy bandgap across the full composition range has been achiev…
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Nanobelts, nanoribbons and other quasi-one-dimensional nanostructures formed from layered, so-called, van der Waals semiconductors have garnered much attention due to their high-performance, tunable optoelectronic properties. For layered alloys made from the gallium monochalcogenides GaS, GaSe, and GaTe, near-continuous tuning of the energy bandgap across the full composition range has been achieved in GaSe1-xSx and GaSe1-xTex alloys. Gold-catalyzed vapor-liquid-solid (VLS) growth of these alloys yields predominantly nanobelts, nanoribbons and other nanostructures for which the fast crystal growth front consists of layer edges in contact with the catalyst. We demonstrate that in the S-rich, GaS1-xTex system, unlike GaSe1-xSx and GaSe1-xTex, the Au-catalyzed VLS process yields van der Waals nanowires for which the fast growth direction is normal to the layers. The high mismatch between S and Te leads to extraordinary bowing of the GaS1-xTex alloy's energy bandgap, decreasing by at least 0.6 eV for x as small as 0.03. Calculations using density functional theory confirm the significant decrease in bandgap in S-rich GaS1-xTex. The nanowires can exceed fifty micrometers in length, consisting of tens of thousands of van der Waals-bonded layers with triangular or hexagonal cross-sections of uniform dimensions along the length of the nanowire. We propose that the low solubility of Te in GaS results in an enhancement in Te coverage around the Au catalyst-nanowire interface, confining the catalyst to the chalcogen-terminated basal plane (rather than the edges) and thereby enabling layer-by-layer, c-axis growth.
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Submitted 7 November, 2022;
originally announced November 2022.
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Defect formation dynamics during CdTe overlayer growth
Authors:
J. J. Chavez,
D. K. Ward,
B. M. Wong,
F. P. Doty,
J. L. Cruz-Campa,
G. N. Nielson,
V. P. Gupta,
D. Zubia,
J. McClure,
X. W. Zhou
Abstract:
The presence of atomic-scale defects at multilayer interfaces significantly degrades performance in CdTe-based photovoltaic technologies. The ability to accurately predict and understand defect formation mechanisms during overlayer growth is, therefore, a rational approach for improving the efficiencies of CdTe materials. In this work, we utilize a recently developed CdTe bond-order potential (BOP…
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The presence of atomic-scale defects at multilayer interfaces significantly degrades performance in CdTe-based photovoltaic technologies. The ability to accurately predict and understand defect formation mechanisms during overlayer growth is, therefore, a rational approach for improving the efficiencies of CdTe materials. In this work, we utilize a recently developed CdTe bond-order potential (BOP) to enable accurate molecular dynamics (MD) simulations for predicting defect formation during multilayer growth. A detailed comparison of our MD simulations to high-resolution transmission electron microscopy experiments verifies the accuracy and predictive power of our approach. Our simulations further indicate that island growth can reduce the lattice mismatch induced defects. These results highlight the use of predictive MD simulations to gain new insight on defect reduction in CdTe overlayers, which directly addresses efforts to improve these materials.
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Submitted 22 June, 2012;
originally announced June 2012.
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High-fidelity simulations of CdTe vapor deposition from a new bond-order potential-based molecular dynamics method
Authors:
X. W. Zhou,
D. Ward,
B. M. Wong,
F. P. Doty,
J. A. Zimmerman,
G. N. Nielson,
J. L. Cruz-Campa,
V. P. Gupta,
J. E. Granata,
J. J. Chavez,
D. Zubia
Abstract:
CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below the theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth…
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CdTe has been a special semiconductor for constructing the lowest-cost solar cells and the CdTe-based Cd1-xZnxTe alloy has been the leading semiconductor for radiation detection applications. The performance currently achieved for the materials, however, is still far below the theoretical expectations. This is because the property-limiting nanoscale defects that are easily formed during the growth of CdTe crystals are difficult to explore in experiments. Here we demonstrate the capability of a bond order potential-based molecular dynamics method for predicting the crystalline growth of CdTe films during vapor deposition simulations. Such a method may begin to enable defects generated during vapor deposition of CdTe crystals to be accurately explored.
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Submitted 19 June, 2012;
originally announced June 2012.
