Showing 1–6 of 6 results for author: Chauveau, J

Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO

Authors: N. Temahuki, F. Jomard, A. Lusson, I. Stenger, S. Hassani, J. Chevallier, J. M. Chauveau, C. Morhain, J. Barjon

Abstract: Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room… ▽ More Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room temperature. Deuterium diffusion is observed in all epilayers while its penetration depth decreases as the nitrogen concentration increases. This is a strong evidence of a diffusion mechanism limited by the trapping of deuterium on a nitrogen-related trap. The SIMS profiles are analyzed using a two-trap model including a shallow trap, associated with a fast diffusion, and a deep trap, related to nitrogen. The capture radius of the nitrogen-related trap is determined to be 20 times smaller than the value expected for nitrogen-deuterium pairs formed by coulombic attraction between D+ and nitrogen-related acceptors. The (N2)O deep donor is proposed as the deep trapping site for deuterium and accounts well for the small capture radius and the observed photoluminescence quenching and recovery after deuteration of the ZnO:N epilayers. It is also found that this defect is by far the N-related defect with the highest concentration in the studied samples. △ Less

Submitted 9 March, 2021; originally announced March 2021.

A Photonic Atom Probe coupling 3D Atomic Scale Analysis with in situ Photoluminescence Spectroscopy

Authors: Jonathan Houard, Antoine Normand, Enrico Di Russo, Christian Bacchi, Pradip Dalapati, Georges Beainy, Simona Moldovan, Gerald Da Costa, Fabien Delaroche, Charly Vaudolon, Jean Michel Chauveau, Maxime Hugues, Didier Blavette, Bernard Deconihout, Angela Vella, François Vurpillot, Lorenzo Rigutti

Abstract: Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence (μPL) bench that can be operated during APT analysis. The Photonic Atom Probe inst… ▽ More Laser enhanced field evaporation of surface atoms in Laser-assisted Atom Probe Tomography (La-APT) can simultaneously excite phtotoluminescence in semiconductor or insulating specimens. An atom probe equipped with appropriate focalization and collection optics has been coupled with an in-situ micro-Photoluminescence (μPL) bench that can be operated during APT analysis. The Photonic Atom Probe instrument we have developped operates at frequencies up to 500 kHz and is controlled by 150 fs laser pulses tunable in energy in a large spectral range (spanning from deep UV to near IR). Micro-PL spectroscopy is performed using a 320 mm focal length spectrometer equipped with a CCD camera for time-integrated and with a streak camera for time-resolved acquisitions. An exemple of application of this instrument on a multi-quantum well oxide heterostructure sample illustrates the potential of this new generation of tomographic atom probe. △ Less

Submitted 23 July, 2020; originally announced July 2020.

Comments: 22 pages, 4 figures. The following article has been accepted by the Review of Scientific Instruments. After it is published, it will be found at https://publishing.aip.org/resources/librarians/products/journals/

Intersubband polarons in oxides

Authors: M. Montes Bajo, J. Tamayo-Arriola, M. Hugues, J. M. Ulloa, N. Le Biavan, R. Peretti, F. H. Julien, J. Faist, J. M. Chauveau, A. Hierro

Abstract: Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequ… ▽ More Intersubband (ISB) polarons result from the interaction of an ISB transition and the longitudinal optical (LO) phonons in a semiconductor quantum well (QW). Their observation requires a very dense two dimensional electron gas (2DEG) in the QW and a polar or highly ionic semiconductor. Here we show that in ZnO/MgZnO QWs the strength of such a coupling can be as high as 1.5 times the LO-phonon frequency due to the very dense 2DEG achieved and the large difference between the static and high-frequency dielectric constants in ZnO. The ISB polaron is observed optically in multiple QW structures with 2DEG densities ranging from $5\times 10^{12}$ to $5\times 10^{13}$ cm$^{-2}$, where an unprecedented regime is reached in which the frequency of the upper ISB polaron branch is three times larger than that of the bare ISB transition. This study opens new prospects to the exploitation of oxides in phenomena happening in the ultrastrong coupling regime. △ Less

Submitted 22 March, 2017; originally announced March 2017.

Demonstrating the decoupling regime of the electron-phonon interaction in a quantum dot using chirped optical excitation

Authors: Timo Kaldewey, Sebastian Lüker, Andreas V. Kuhlmann, Sascha R. Valentin, Jean-Michel Chauveau, Arne Ludwig, Andreas D. Wieck, Doris E. Reiter, Tilmann Kuhn, Richard J. Warburton

Abstract: Excitation of a semiconductor quantum dot with a chirped laser pulse allows excitons to be created by rapid adiabatic passage. In quantum dots this process can be greatly hindered by the coupling to phonons. Here we add a high chirp rate to ultra-short laser pulses and use these pulses to excite a single quantum dot. We demonstrate that we enter a regime where the exciton-phonon coupling is effect… ▽ More Excitation of a semiconductor quantum dot with a chirped laser pulse allows excitons to be created by rapid adiabatic passage. In quantum dots this process can be greatly hindered by the coupling to phonons. Here we add a high chirp rate to ultra-short laser pulses and use these pulses to excite a single quantum dot. We demonstrate that we enter a regime where the exciton-phonon coupling is effective for small pulse areas, while for higher pulse areas a decoupling of the exciton from the phonons occurs. We thus discover a reappearance of rapid adiabatic passage, in analogy to the predicted reappearance of Rabi rotations at high pulse areas. The measured results are in good agreement with theoretical calculations. △ Less

Submitted 16 March, 2017; v1 submitted 5 January, 2017; originally announced January 2017.

Comments: Main manuscript 5 pages and 4 figures, Supplementary Information 5 pages and 3 figures, submitted to PRL

Journal ref: Phys. Rev. B 95, 241306 (2017)

Transport of indirect excitons in ZnO quantum wells

Authors: Yuliya Kuznetsova, Fedor Fedichkin, Peristera Andreakou, Eric Calman, Leonid Butov, Pierre Lefebvre, Thierry Bretagnon, Thierry Guillet, Maria Vladimirova, C. Morhain, Jean-Michel Chauveau

Abstract: We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells. We report on spatially- and time-resolved emission measurements and observation of transport of indirect excitons in ZnO/MgZnO wide single quantum wells. △ Less

Submitted 23 July, 2015; v1 submitted 10 March, 2015; originally announced March 2015.

Journal ref: Optics Letters 40, 3667-3670 (2015)

Low temperature reflectivity study of ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substrates

Authors: Luc Beaur, Thierry Bretagnon, Christelle Brimont, Thierry Guillet, Bernard Gil, Dimitri Tainoff, M. Teisseire, J. M. Chauveau

Abstract: We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good interface morphologies. Signatures ofc onfined excitons… ▽ More We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good interface morphologies. Signatures ofc onfined excitons built from the spin-orbit split-off valence band, the analog of exciton C in bulk ZnO are detected in normal incidence reflectivity experiments using a photon polarized along the c axis of the wurtzite lattice. Experiments performed in the context of an orthogonal photon polarization, at 90^{\circ}; of this axis, reveal confined states analogs of A and B bulk excitons. Envelope function calculations which include excitonic interaction nicely account for the experimental report. △ Less

Submitted 17 October, 2011; v1 submitted 10 January, 2011; originally announced January 2011.

Journal ref: Applied Physics Letters 98 (2011) 101913