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Ultra-large mutually synchronized networks of 10 nm spin Hall nano-oscillators
Authors:
Nilamani Behera,
Avinash Kumar Chaurasiya,
Akash Kumar,
Roman Khymyn,
Artem Litvinenko,
Lakhan Bainsla,
Ahmad A. Awad,
Johan Åkerman
Abstract:
While mutually interacting spin Hall nano-oscillators (SHNOs) hold great promise for wireless communication, neural networks, neuromorphic computing, and Ising machines, the highest number of synchronized SHNOs remains limited to $N$ = 64. Using ultra-narrow 10 and 20-nm nano-constrictions in W-Ta/CoFeB/MgO trilayers, we demonstrate mutually synchronized SHNO networks of up to $N$ = 105,000. The m…
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While mutually interacting spin Hall nano-oscillators (SHNOs) hold great promise for wireless communication, neural networks, neuromorphic computing, and Ising machines, the highest number of synchronized SHNOs remains limited to $N$ = 64. Using ultra-narrow 10 and 20-nm nano-constrictions in W-Ta/CoFeB/MgO trilayers, we demonstrate mutually synchronized SHNO networks of up to $N$ = 105,000. The microwave power and quality factor scale as $N$ with new record values of 9 nW and $1.04 \times 10^6$, respectively. An unexpectedly strong array size dependence of the frequency-current tunability is explained by magnon exchange between nano-constrictions and magnon losses at the array edges, further corroborated by micromagnetic simulations and Brillouin light scattering microscopy. Our results represent a significant step towards viable SHNO network applications in wireless communication and unconventional computing.
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Submitted 30 January, 2025;
originally announced January 2025.
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Spin wave-driven variable-phase mutual synchronization in spin Hall nano-oscillators
Authors:
Akash Kumar,
Avinash kumar Chaurasiya,
Victor H. González,
Nilamani Behera,
Roman Khymyn,
Ahmad A. Awad,
Johan Åkerman
Abstract:
Spin-orbit torque can drive auto-oscillations of propagating spin wave (PSW) modes in nano-constriction spin Hall nano-oscillators (SHNOs). These modes allow both long-range coupling and the potential of controlling its phase -- critical aspect for nano-magnonics, spin wave logic, and Ising machines. Here, we demonstrate PSW-driven variable-phase coupling between two nano-constriction SHNOs and st…
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Spin-orbit torque can drive auto-oscillations of propagating spin wave (PSW) modes in nano-constriction spin Hall nano-oscillators (SHNOs). These modes allow both long-range coupling and the potential of controlling its phase -- critical aspect for nano-magnonics, spin wave logic, and Ising machines. Here, we demonstrate PSW-driven variable-phase coupling between two nano-constriction SHNOs and study how their separation and the PSW wave vector impact their mutual synchronization. In addition to ordinary in-phase mutual synchronization, we observe, using both electrical measurements and phase-resolved $μ-$Brillouin Light Scattering microscopy, mutual synchronization with a phase that can be tuned from 0 to $π$ using the drive current or the applied field. Micromagnetic simulations corroborate the experiments and visualize how the PSW patterns in the bridge connecting the two nano-constrictions govern the coupling. These results advance the capabilities of mutually synchronized SHNOs and open up new possibilities for applications in spin wave logic, unconventional computing, and Ising Machines.
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Submitted 1 February, 2024;
originally announced February 2024.
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Ultra-low-current-density single-layer magnetic Weyl semimetal spin Hall nano-oscillators
Authors:
Lakhan Bainsla,
Yuya Sakuraba,
Avinash Kumar Chaurasiya,
Akash Kumar,
Keisuke Masuda,
Ahmad A. Awad,
Nilamani Behera,
Roman Khymyn,
Saroj Prasad Dash,
Johan Åkerman
Abstract:
Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall…
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Topological quantum materials can exhibit unconventional surface states and anomalous transport properties. Still, their applications in spintronic devices are restricted as they require the growth of high-quality thin films with bulk-like properties. Here, we study 10--30 nm thick epitaxial ferromagnetic Co$_{\rm 2}$MnGa films with high structural order and very high values of the anomalous Hall conductivity, $σ_{\rm xy}=1.35\times10^{5}$ $Ω^{-1} m^{-1}$ and the anomalous Hall angle, $θ_{\rm H}=15.8\%$, both comparable to bulk values. We observe a dramatic crystalline orientation dependence of the Gilbert damping constant of a factor of two and a giant intrinsic spin Hall conductivity, $\mathit{σ_{\rm SHC}}=(6.08\pm 0.02)\times 10^{5}$ ($\hbar/2e$) $Ω^{-1} m^{-1}$, an order of magnitude higher than literature values of multilayer Co$_{\rm 2}$MnGa stacks [1-3] and single-layer Ni, Co, Fe [4], and Ni$_{\rm 80}$Fe$_{\rm 20}$~[4,5]. As a consequence, spin-orbit-torque driven auto-oscillations of a 30 nm thick magnetic film are observed for the first time, at an ultralow threshold current density of $J_{th}=6.2\times10^{11}$ $Am^{-2}$. Theoretical calculations of the intrinsic spin Hall conductivity, originating from a strong Berry curvature, corroborate the results and yield values comparable to the experiment. Our results open up for the design of spintronic devices based on single layers of magnetic topological quantum materials.
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Submitted 19 April, 2024; v1 submitted 14 November, 2023;
originally announced November 2023.
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Ultra-low current 10 nm spin Hall nano-oscillators
Authors:
Nilamani Behera,
Avinash Kumar Chaurasiya,
Victor H. González,
Artem Litvinenko,
Lakhan Bainsla,
Akash Kumar,
Ahmad A. Awad,
Himanshu Fulara,
Johan Åkerman
Abstract:
Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, we show that current shunting through the Si substrate is the origin of…
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Nano-constriction based spin Hall nano-oscillators (SHNOs) are at the forefront of spintronics research for emerging technological applications such as oscillator-based neuromorphic computing and Ising Machines. However, their miniaturization to the sub-50 nm width regime results in poor scaling of the threshold current. Here, we show that current shunting through the Si substrate is the origin of this problem and study how different seed layers can mitigate it. We find that an ultra-thin Al$_{2}$O$_{3}$ seed layer and SiN (200 nm) coated p-Si substrates provide the best improvement, enabling us to scale down the SHNO width to a truly nanoscopic dimension of 10 nm, operating at threshold currents below 30 $μ$A. In addition, the combination of electrical insulation and high thermal conductivity of the Al$_{2}$O$_{3}$ seed will offer the best conditions for large SHNO arrays, avoiding any significant temperature gradients within the array. Our state-of-the-art ultra-low operational current SHNOs hence pave an energy-efficient route to scale oscillator-based computing to large dynamical neural networks of linear chains or two-dimensional arrays.
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Submitted 11 May, 2023;
originally announced May 2023.
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Controlling degeneracy and magnetization switching in an artificial spin ice system of peanut-shaped nanomagnets
Authors:
Avinash Chaurasiya,
Manish Anand,
Rajdeep Singh Rawat
Abstract:
Using extensive numerical simulations, we probe the magnetization switching in two-dimensional artificial spin ice (ASI) system consisting of peanut-shaped nanomagnets. We also investigated the effect of the external magnetic field on the degeneracy of the magnetic states in such a system. The switching field is found to be one order smaller in the proposed ASI system with peanut-shaped nanomagnet…
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Using extensive numerical simulations, we probe the magnetization switching in two-dimensional artificial spin ice (ASI) system consisting of peanut-shaped nanomagnets. We also investigated the effect of the external magnetic field on the degeneracy of the magnetic states in such a system. The switching field is found to be one order smaller in the proposed ASI system with peanut-shaped nanomagnets as compared to the conventionally used highly-anisotropic nanoisland such as elliptically shaped nanomagnets. The metastable 2-in/2-out (Type II) magnetic state is robust at the remanence. We are also able to access the other possible microstates corresponding to Type II magnetic configurations by carefully varying the external magnetic field. It implies that one can control the degeneracy of the magnetic state by the application of a suitable magnetic field. Interestingly, the magnetic charge neutrality breaks due to the defects induced by removing nanomagnets. In such a case, the system also appears to have a 1-out/3-in or 3-out/1-in (Type III) spin state, reminiscent of a magnetic monopole. We believe that our study is highly desirable in the context of developing the next-generation spintronics-based devices for future technologies.
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Submitted 19 February, 2022;
originally announced February 2022.
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Mechanism of Spin-Orbit Torques in Platinum Oxide Systems
Authors:
Jayshankar Nath,
Alexandru Vladimir Trifu,
Mihai Sebastian Gabor,
Ali Hallal,
Stephane Auffret,
Sebastien Labau,
Aymen Mahjoub,
Edmond Chan,
Avinash Kumar Chaurasiya,
Amrit Kumar Mondal,
Haozhe Yang,
Eva Schmoranzerova,
Mohamed Ali Nsibi,
Isabelle Joumard,
Anjan Barman,
Bernard Pelissier,
Mairbek Chshiev,
Gilles Gaudin,
Ioan Mihai Miron
Abstract:
Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of for…
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Spin-Orbit Torque (SOT) Magnetic Random-Access Memories (MRAM) have shown promising results towards the realization of fast, non-volatile memory systems. Oxidation of the heavy-metal (HM) layer of the SOT-MRAM has been proposed as a method to increase its energy efficiency. But the results are widely divergent due to the difficulty in controlling the HM oxidation because of its low enthalpy of formation. Here, we reconcile these differences by performing a gradual oxidation procedure, which allows correlating the chemical structure to the physical properties of the stack. As an HM layer, we chose Pt because of the strong SOT and the low enthalpy of formation of its oxides. We find evidence of an oxide inversion layer at the FM/HM interface: the oxygen is drawn into the FM, while the HM remains metallic near the interface. We further demonstrate that the oxygen migrates in the volume of the FM layer rather than being concentrated at the interface. Consequently, we find that the intrinsic magnitude of the SOT is unchanged compared to the fully metallic structure. The previously reported apparent increase of SOTs is not intrinsic to platinum oxide and instead arises from systemic changes produced by oxidation.
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Submitted 13 December, 2021;
originally announced December 2021.
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Active Magnetoelectric Control of Terahertz Spin Current
Authors:
Avinash Chaurasiya,
Ziqi Li,
Rohit Medwal,
Surbhi Gupta,
John Rex Mohan,
Yasuhiro Fukuma,
Hironori Asada,
Elbert E. M. Chia,
Rajdeep Singh Rawat
Abstract:
Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and ferromagnet heterostructure provides the potential avenue to control the spin dynamics efficiently utilizing the magnetoelectric coupling. The demonstration of the…
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Electrical control of photogenerated THz spin current pulses from a spintronic emitter has been at the forefront for the development of scalable, cost-efficient, wideband opto-spintronics devices. Artificially combined ferroelectric and ferromagnet heterostructure provides the potential avenue to control the spin dynamics efficiently utilizing the magnetoelectric coupling. The demonstration of the electric field control of spin dynamics has so far been limited up to gigahertz frequencies. Here, we demonstrate the electric field mediated piezoelectric strain control of photogenerated THz spin current pulse from a multiferroic spintronic emitter. The phase reversal of the THz spin current pulse is obtained from the combined effect of piezoelectric strain and a small constant magnetic field applied opposite to the initial magnetization of the ferromagnet. The piezoelectric strain-controlled phase switching of THz spin current thus opens a door to develop efficient strain engineered scalable on-chip THz spintronics devices.
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Submitted 27 November, 2021;
originally announced November 2021.
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Angle Selective Piezoelectric Strain Controlled Magnetization Switching in Artificial Spin Ice Based Multiferroic System
Authors:
Avinash Chaurasiya,
Manish Anand,
Rajdeep Singh Rawat
Abstract:
The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the electric field-induced strain mediated magnetization switching in artificial spin ice (ASI) based multiferroic system, which is proposed to have a significant decr…
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The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the electric field-induced strain mediated magnetization switching in artificial spin ice (ASI) based multiferroic system, which is proposed to have a significant decrease in Joule heating losses compared to electric current based methods. As the piezo electric strain-based system cannot switch the magnetization by $180^\circ$ in ferromagnets, we propose an ASI multiferroic system consisting of the peanut-shaped nanomagnets on ferroelectric substrate with the angle between the easy axis and hard axis of magnetization less than $90^\circ$. Here the piezoelectric strain-controlled magnetization switching has been studied by applying the electric field pulse at different angles with respect to the axes of the system. Remarkably, magnetization switches by $180^\circ$ only if the external electric field pulse is applied at some specific angles, close to the anisotropy axis of the system ( $\sim 30^\circ - 60^\circ$). Our detailed analysis of the demagnetization energy variation reveals that the energy barrier becomes antisymmetric in such cases, facilitating the complete magnetization reversal. Moreover, we have also proposed a possible magnetization reversal mechanism with two sequential electric field pulses of relatively smaller magnitude. We believe that the present work could pave the way for future ASI-based multiferroic system for scalable magnetic field-free low power spintronics devices.
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Submitted 21 August, 2021;
originally announced August 2021.
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Comparison of Spin-Wave Modes in Connected and Disconnected Artificial Spin Ice Nanostructures Using Brillouin Light Scattering Spectroscopy
Authors:
Avinash Kumar Chaurasiya,
Amrit Kumar Mondal,
Jack C. Gartside,
Kilian D. Stenning,
Alex Vanstone,
Saswati Barman,
Will R. Branford,
Anjan Barman
Abstract:
Artificial spin ice systems have seen burgeoning interest due to their intriguing physics and potential applications in reprogrammable memory, logic and magnonics. Integration of artificial spin ice with functional magnonics is a relatively recent research direction, with a host of promising results. As the field progresses, direct in-depth comparisons of distinct artificial spin systems are cruci…
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Artificial spin ice systems have seen burgeoning interest due to their intriguing physics and potential applications in reprogrammable memory, logic and magnonics. Integration of artificial spin ice with functional magnonics is a relatively recent research direction, with a host of promising results. As the field progresses, direct in-depth comparisons of distinct artificial spin systems are crucial to advancing the field. While studies have investigated the effects of different lattice geometries, little comparison exists between systems comprising continuously connected nanostructures, where spin-waves propagate via dipole-exchange interaction, and systems with nanobars disconnected at vertices where spin-wave propagation occurs via stray dipolar-field. Gaining understanding of how these very different coupling methods affect both spin-wave dynamics and magnetic reversal is key for the field to progress and provides crucial system-design information including for future systems containing combinations of connected and disconnected elements. Here, we study the magnonic response of two kagome spin ices via Brillouin light scattering, a continuously connected system and a disconnected system with vertex gaps. We observe distinct high-frequency dynamics and magnetization reversal regimes between the systems, with key distinctions in spin-wave localization and mode quantization, microstate-trajectory during reversal and internal field-profiles. These observations are pertinent for the fundamental understanding of artificial spin systems and broader design and engineering of reconfigurable functional magnonic crystals.
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Submitted 18 October, 2021; v1 submitted 29 January, 2021;
originally announced January 2021.
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Direct measurement of interfacial Dzyaloshinskii-Moriya interaction at the MoS$_{\rm 2}$/Ni$_{80}$Fe$_{20}$ interface
Authors:
Akash Kumar,
Avinash Kumar Chaurasiya,
Niru Chowdhury,
Amrit Kumar Mondal,
Rajni Bansal,
Arun Barvat,
Suraj P Khanna,
Prabir Pal,
Sujeet Chaudhary,
Anjan Barman,
P. K. Muduli
Abstract:
We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/T…
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We report on a direct measurement of sizable interfacial Dzyaloshinskii-Moriya interaction (iDMI) at the interface of two-dimensional transition metal dichalcogenide (2D-TMD), MoS$_{\rm 2}$ and Ni$_{80}$Fe$_{20}$ (Py) using Brillouin light scattering spectroscopy. A clear asymmetry in spin-wave dispersion is measured in MoS$_{\rm 2}$/Py/Ta, while no such asymmetry is detected in the reference Py/Ta system. A linear scaling of the DMI constant with the inverse of Py thickness indicates the interfacial origin of the observed DMI. We further observe an enhancement of DMI constant in three to four layer MoS$_{\rm 2}$/Py system (by 56$\%$) as compared to 2 layer MoS$_{\rm 2}$/Py which is caused by a higher density of MoO$_{\rm 3}$ defect species in the case of three to four layer MoS$_{\rm 2}$. The results open possibilities of spin-orbitronic applications utilizing the 2D-TMD based heterostructures.
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Submitted 15 June, 2020; v1 submitted 14 April, 2020;
originally announced April 2020.
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Direct Observation of Unusual Interfacial Dzyaloshinskii-Moriya Interaction in Graphene/NiFe/Ta Heterostructure
Authors:
Avinash Kumar Chaurasiya,
Akash Kumar,
Rahul Gupta,
Sujeet Chaudhary,
Pranaba Kishor Muduli,
Anjan Barman
Abstract:
Graphene/ferromagnet interface promises a plethora of new science and technology. The interfacial Dzyaloshinskii Moriya interaction (iDMI) is essential for stabilizing chiral spin textures, which are important for future spintronic devices. Here, we report direct observation of iDMI in graphene/Ni80Fe20/Ta heterostructure from non-reciprocity in spin-wave dispersion using Brillouin light scatterin…
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Graphene/ferromagnet interface promises a plethora of new science and technology. The interfacial Dzyaloshinskii Moriya interaction (iDMI) is essential for stabilizing chiral spin textures, which are important for future spintronic devices. Here, we report direct observation of iDMI in graphene/Ni80Fe20/Ta heterostructure from non-reciprocity in spin-wave dispersion using Brillouin light scattering (BLS) technique. Linear scaling of iDMI with the inverse of Ni80Fe20 thicknesses suggests primarily interfacial origin of iDMI. Both iDMI and spin-mixing conductance increase with the increase in defect density of graphene obtained by varying argon pressure during sputter deposition of Ni80Fe20. This suggests that the observed iDMI originates from defect-induced extrinsic spin-orbit coupling at the interface. The direct observation of iDMI at graphene/ferromagnet interface without perpendicular magnetic anisotropy opens new route in designing thin film heterostructures based on 2-D materials for controlling chiral spin structure such as skyrmions and bubbles, and magnetic domain-wall-based storage and memory devices.
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Submitted 31 January, 2019;
originally announced January 2019.
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Observation of Skyrmions at Room Temperature in Co2FeAl Heusler Alloy Ultrathin Films
Authors:
Sajid Husain,
Naveen Sisodia,
Avinash Kumar Chaurasiya,
Ankit Kumar,
Serkan Akanse,
Anjan Barman,
P. K. Mudulli,
Peter Svedlindh,
Sujeet Chaudhary
Abstract:
Magnetic skyrmions are topological spin structures having immense potential for energy efficient spintronic devices. However, observations of skyrmions at room temperature are limited to patterned nanostructures. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature and in zero external magnetic field employing magneti…
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Magnetic skyrmions are topological spin structures having immense potential for energy efficient spintronic devices. However, observations of skyrmions at room temperature are limited to patterned nanostructures. Here, we report the observation of stable skyrmions in unpatterned Ta/Co2FeAl(CFA)/MgO thin film heterostructures at room temperature and in zero external magnetic field employing magnetic force microscopy. The skyrmions are observed in a trilayer structure comprised of heavy metal (HM)/ferromagnet (FM)/Oxide interfaces which result in strong interfacial Dzyaloshinskii-Moriya interaction (i-DMI) as evidenced by Brillouin light scattering measurements, in agreement with the results of micromagnetic simulations. We also emphasize on room temperature observation of multiple skyrmions which can be stabilized for suitable choices of CFA layer thickness, perpendicular magnetic anisotropy, and i-DMI. These results open up a new paradigm for designing room temperature spintronic devices based on skyrmions in FM continuous thin films.
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Submitted 29 March, 2017;
originally announced March 2017.
