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Altermagnetic band splitting in 10 nm epitaxial CrSb thin films
Authors:
Sandra Santhosh,
Paul Corbae,
Wilson J. Yanez-Parreno,
Supriya Ghosh,
Christopher J. Jensen,
Alexei V. Fedorov,
Makoto Hashimoto,
Donghui Lu,
Julie A. Borchers,
Alexander J. Grutter,
Timothy R. Charlton,
Saurav Islam,
Anthony Richardella,
K. Andre Mkhoyan,
Christopher J. Palmstrøm,
Yongxi Ou,
Nitin Samarth
Abstract:
Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K.…
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Altermagnets are a newly identified family of collinear antiferromagnets with momentum-dependent spin-split band structure of non-relativistic origin, derived from spin-group symmetry-protected crystal structures. Among candidate altermagnets, CrSb is attractive for potential applications because of a large spin-splitting near the Fermi level and a high Neel transition temperature of around 700 K. We use molecular beam epitaxy to synthesize CrSb (0001) thin films with thicknesses ranging from 10 nm to 100 nm. Structural characterization, using reflection high energy electron diffraction, scanning transmission electron microscopy, and X-ray diffraction, demonstrates the growth of epitaxial films with good crystallinity. Polarized neutron reflectometry shows the absence of any net magnetization, consistent with antiferromagnetic order. In vacuo angle resolved photoemission spectroscopy (ARPES) measurements probe the band structure in a previously unexplored regime of film thickness, down to 10 nm. These ARPES measurements show a three-dimensional momentum-dependent band splitting of up to 0.7 eV with g-wave symmetry, consistent with that seen in prior studies of bulk single crystals. The distinct altermagnetic band structure required for potential spin-transport applications survives down to the 10 nm thin film limit at room temperature.
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Submitted 12 May, 2025; v1 submitted 30 April, 2025;
originally announced May 2025.
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Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe
Authors:
Michael Chilcote,
Alessandro R. Mazza,
Qiangsheng Lu,
Isaiah Gray,
Qi Tian,
Qinwen Deng,
Duncan Moseley,
An-Hsi Chen,
Jason Lapano,
Jason S. Gardner,
Gyula Eres,
T. Zac Ward,
Erxi Feng,
Huibo Cao,
Valeria Lauter,
Michael A. McGuire,
Raphael Hermann,
David Parker,
Myung-Geun Han,
Asghar Kayani,
Gaurab Rimal,
Liang Wu,
Timothy R. Charlton,
Robert G. Moore,
Matthew Brahlek
Abstract:
The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/In…
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The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.
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Submitted 6 June, 2024;
originally announced June 2024.
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Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure
Authors:
Arpita Mitra,
Run Xiao,
Wilson Yanez,
Yongxi Ou,
Juan Chamorro,
Tyrel McQueen,
Alexander J. Grutter,
Julie A. Borchers,
Michael R. Fitzsimmons,
Timothy R. Charlton,
Nitin Samarth
Abstract:
Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through doping with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn…
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Breaking time-reversal symmetry in a Dirac semimetal Cd$_3$As$_2$ through doping with magnetic ions or by the magnetic proximity effect is expected to cause a transition to other topological phases (such as a Weyl semimetal). To this end, we investigate the possibility of proximity-induced ferromagnetic ordering in epitaxial Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructures grown by molecular beam epitaxy. We report the comprehensive characterization of these heterostructures using structural probes (atomic force microscopy, x-ray diffraction, scanning transmission electron microscopy), angle-resolved photoemission spectroscopy, electrical magneto-transport, magnetometry, and polarized neutron reflectometry. Measurements of the magnetoresistance and Hall effect in the temperature range 2 K - 20 K show signatures that could be consistent with either a proximity effect or spin-dependent scattering of charge carriers in the Cd$_3$As$_2$ channel. Polarized neutron reflectometry sets constraints on the interpretation of the magnetotransport studies by showing that (at least for temperatures above 6 K) any induced magnetization in the Cd$_3$As$_2$ itself must be relatively small ($<$ 14 emu/cm$^3$).
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Submitted 1 June, 2023;
originally announced June 2023.
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Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces
Authors:
Qiao Jin,
Qinghua Zhang,
He Bai,
Amanda Huon,
Timothy Charlton,
Shengru Chen,
Shan Lin,
Haitao Hong,
Ting Cui,
Can Wang,
Haizhong Guo,
Lin Gu,
Tao Zhu,
Michael R. Fitzsimmons,
Kui-juan Jin,
Shanmin Wang,
Er-Jia Guo
Abstract:
Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. He…
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Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. Here we report the fabrication of single-crystalline ferromagnetic Fe3N thin films with precisely controlled thickness. As film thickness decreasing, the magnetization deteriorates dramatically, and electronic state transits from metallic to insulating. Strikingly, the high-temperature ferromagnetism maintains in a Fe3N layer with a thickness down to 2 u. c. (~ 8 Å). The magnetoresistance exhibits a strong in-plane anisotropy and meanwhile the anomalous Hall resistance reserves its sign when Fe3N layer thickness exceeds 5 u. c. Furthermore, we observe a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using cylinder diameter engineering (CDE) technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives towards the practical applications.
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Submitted 12 September, 2022;
originally announced September 2022.
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Atomically engineered cobaltite layers for robust ferromagnetism
Authors:
Shengru Chen,
Qinghua Zhang,
Xujing Li,
Jiali Zhao,
Shan Lin,
Qiao Jin,
Haitao Hong,
Amanda Huon,
Timothy Charlton,
Qian Li,
Wensheng Yan,
Jiaou Wang,
Chen Ge,
Can Wang,
Baotian Wang,
Michael R. Fitzsimmons,
Haizhong Guo,
Lin Gu,
Wen Yin,
Kuijuan Jin,
Er Jia Guo
Abstract:
Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedr…
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Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining significant misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers triggers the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transits to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.
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Submitted 7 July, 2022;
originally announced July 2022.
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Surface-Driven Evolution of the Anomalous Hall Effect in Magnetic Topological Insulator MnBi2Te4 Thin Films
Authors:
Alessandro R. Mazza,
Jason Lapano,
Harry M. Meyer III,
Christopher T. Nelson,
Tyler Smith,
Yun-Yi Pai,
Kyle Noordhoek,
Benjamin J. Lawrie,
Timothy R. Charlton,
Robert G. Moore,
T. Zac Ward,
Mao-Hua Du,
Gyula Eres,
Matthew Brahlek
Abstract:
Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface ox…
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Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we report that a large electronic and magnetic response is induced in the intrinsic magnetic topological insulator MnBi2Te4 by controlling the propagation of surface oxidation. We show that the formation of the surface oxide layer is confined to the top 1-2 unit cells but drives large changes in the overall magnetic response. Specifically, we observe a dramatic reversal of the sign of the anomalous Hall effect driven by finite thickness magnetism, which indicates that the film splits into distinct magnetic layers each with a unique electronic signature. These data reveal a delicate dependence of the overall magnetic and electronic response of MnBi2Te4 on the stoichiometry of the top layers. Our study suggests that perturbations resulting from surface oxidation may play a non-trivial role in the stabilization of the quantum anomalous Hall effect in this system and that understanding targeted modifications to the surface may open new routes for engineering novel topological and magnetic responses in this fascinating material.
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Submitted 22 May, 2022;
originally announced May 2022.
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Room-Temperature Valence Transition in a Strain-Tuned Perovskite Oxide
Authors:
Vipul Chaturvedi,
Supriya Ghosh,
Dominique Gautreau,
William M. Postiglione,
John E. Dewey,
Patrick Quarterman,
Purnima P. Balakrishnan,
Brian J. Kirby,
Hua Zhou,
Huikai Cheng,
Amanda Huon,
Timothy Charlton,
Michael R. Fitzsimmons,
Caroline Korostynski,
Andrew Jacobson,
Lucca Figari,
Javier Garcia Barriocanal,
Turan Birol,
K. Andre Mkhoyan,
Chris Leighton
Abstract:
Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transitio…
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Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr1-xCaxCoO3). Here, we show that in thin films of the complex perovskite (Pr1-yYy)1-xCaxCoO3-δ, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point.
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Submitted 9 June, 2022; v1 submitted 20 December, 2021;
originally announced December 2021.
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Incommensurate-commensurate magnetic phase transition in the double tungstate Li2Co(WO4)2
Authors:
Xiyu Chen,
Ning Ding,
Meifeng Liu,
Tao Zou,
V. Ovidiu Garlea,
Jingwen Gong,
Fei Liu,
Yunlong Xie,
Lun Yang,
Shuhan Zheng,
Xiuzhang Wang,
Shuai Dong,
T. Charlton,
Jun-Ming Liu
Abstract:
Magnetic susceptibility, specific heat, and neutron powder diffraction measurements have been performed on polycrystalline Li2Co(WO4)2 samples. Under zero magnetic field, two successive magnetic transitions at TN1 ~ 9.4 K and TN2 ~ 7.4 K are observed. The magnetic ordering temperatures gradually decrease as the magnetic field increases. Neutron diffraction reveals that Li2Co(WO4)2 enters an incomm…
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Magnetic susceptibility, specific heat, and neutron powder diffraction measurements have been performed on polycrystalline Li2Co(WO4)2 samples. Under zero magnetic field, two successive magnetic transitions at TN1 ~ 9.4 K and TN2 ~ 7.4 K are observed. The magnetic ordering temperatures gradually decrease as the magnetic field increases. Neutron diffraction reveals that Li2Co(WO4)2 enters an incommensurate magnetic state with a temperature dependent k between TN1 and TN2. The magnetic propagation vector locks-in to a commensurate value k = (1/2, 1/4, 1/4) below TN2. The antiferromagnetic structure is refined at 1.7 K with Co2+ magnetic moment 2.8(1) uB, consistent with our first-principles calculations.
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Submitted 8 November, 2021;
originally announced November 2021.
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Magnetic structure and multiferroicity of Sc-substituted hexagonal YbFeO$_3$
Authors:
Y. S. Tang,
S. M. Wang,
L. Lin,
V. Ovidiu Garlea,
Tao Zou,
S. H. Zheng,
H. -M. Zhang,
J. T. Zhou,
Z. L. Luo,
Z. B. Yan,
S. Dong,
T. Charlton,
J. -M. Liu
Abstract:
Hexagonal rare-earth ferrite RFeO$_3$ family represents a unique class of multiferroics exhibiting weak ferromagnetism, and a strong coupling between magnetism and structural trimerization is predicted. However, the hexagonal structure for RFeO$_3$ remains metastable in conventional condition. We have succeeded in stabilizing the hexagonal structure of polycrystalline YbFeO$_3$ by partial Sc subst…
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Hexagonal rare-earth ferrite RFeO$_3$ family represents a unique class of multiferroics exhibiting weak ferromagnetism, and a strong coupling between magnetism and structural trimerization is predicted. However, the hexagonal structure for RFeO$_3$ remains metastable in conventional condition. We have succeeded in stabilizing the hexagonal structure of polycrystalline YbFeO$_3$ by partial Sc substitution of Yb. Using bulk magnetometry and neutron diffraction, we find that Yb$_{0.42}$Sc$_{0.58}$FeO$_3$ orders into a canted antiferromagnetic state with the Neel temperature $T_N$ ~ 165 K, below which the $Fe^{3+}$ moments form the triangular configuration in the $ab$-plane and their in-plane projections are parallel to the [100] axis, consistent with magnetic space group $P$6$_{3}$$c'm'$. It is determined that the spin-canting is aligned along the $c$-axis, giving rise to the weak ferromagnetism. Furthermore, the $Fe^{3+}$ moments reorient toward a new direction below reorientation temperature $T_R$ ~ 40 K, satisfying magnetic subgroup $P$6$_{3}$, while the $Yb^{3+}$ moments order independently and ferrimagnetically along the $c$-axis at the characteristic temperature $T_{Yb}$ ~ 15 K. Interestingly, reproducible modulation of electric polarization induced by magnetic field at low temperature is achieved, suggesting that the delicate structural distortion associated with two-up/one-down buckling of the Yb/Sc-planes and tilting of the FeO$_5$ bipyramids may mediate the coupling between ferroelectric and magnetic orders under magnetic field. The present work represents a substantial progress to search for high-temperature multiferroics in hexagonal ferrites and related materials.
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Submitted 19 May, 2021;
originally announced May 2021.
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Designer Magnetism in High Entropy Oxides
Authors:
Alessandro R. Mazza,
Elizabeth Skoropata,
Yogesh Sharma,
Jason Lapano,
Thomas W. Heitmann,
Brianna L. Musico,
Veerle Keppens,
Zheng Gai,
John W. Freeland,
Timothy R. Charlton,
Matthew J. Brahlek,
Adriana Moreo,
Elbio Dagotto,
Thomas Z. Ward
Abstract:
Disorder can have a dominating influence on correlated and quantum materials leading to novel behaviors which have no clean limit counterparts. In magnetic systems, spin and exchange disorder can provide access to quantum criticality, frustration, and spin dynamics, but broad tunability of these responses and a deeper understanding of strong limit disorder is lacking. In this work, we demonstrate…
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Disorder can have a dominating influence on correlated and quantum materials leading to novel behaviors which have no clean limit counterparts. In magnetic systems, spin and exchange disorder can provide access to quantum criticality, frustration, and spin dynamics, but broad tunability of these responses and a deeper understanding of strong limit disorder is lacking. In this work, we demonstrate that high entropy oxides present an unexplored route to designing quantum materials in which the presence of strong local compositional disorder hosted on a positionally ordered lattice can be used to generate highly tunable emergent magnetic behavior--from macroscopically ordered states to frustration-driven dynamic spin interactions. Single crystal La(Cr0.2Mn0.2Fe0.2Co0.2Ni0.2)O3 films are used as a structurally uniform model system hosting a magnetic sublattice with massive microstate disorder in the form of site-to-site spin and exchange type inhomogeneity. A classical Heisenberg model is found to be sufficient to describe how compositionally disordered systems can paradoxically host long-range magnetic uniformity and demonstrates that balancing the populating elements based on their discrete quantum parameters can be used to give continuous control over ordering types and critical temperatures. Theory-guided experiments show that composite exchange values derived from the complex mix of microstate interactions can be used to design the required compositional parameters for a desired response. These predicted materials are synthesized and found to possess an incipient quantum critical point when magnetic ordering types are designed to be in direct competition; this leads to highly controllable exchange bias sensitivity in the monolithic single crystal films previously accessible only in intentionally designed bilayer heterojunctions.
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Submitted 12 August, 2021; v1 submitted 12 April, 2021;
originally announced April 2021.
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Determining the Proximity Effect Induced Magnetic Moment in Graphene by Polarized Neutron Reflectivity and X-ray Magnetic Circular Dichroism
Authors:
R. O. M. Aboljadayel,
C. J. Kinane,
C. A. F. Vaz,
D. M. Love,
R. S. Weatherup,
P. Braeuninger-Weimer,
M. -B. Martin,
A. Ionescu,
A. J. Caruana,
T. R. Charlton,
J. Llandro,
P. M. S. Monteiro,
C. H. W. Barnes,
S. Hofmann,
S. Langridge
Abstract:
We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to…
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We report the magnitude of the induced magnetic moment in CVD-grown epitaxial and rotated-domain graphene in proximity with a ferromagnetic Ni film, using polarized neutron reflectivity (PNR) and X-ray magnetic circular dichroism (XMCD). The XMCD spectra at the C K-edge confirms the presence of a magnetic signal in the graphene layer and the sum rules give a magnetic moment of up to $\sim\,0.47\,μ$_B/C atom induced in the graphene layer. For a more precise estimation, we conducted PNR measurements. The PNR results indicate an induced magnetic moment of $\sim$ 0.53 $μ$_B/C atom at 10 K for rotated graphene and $\sim$ 0.38 $μ$_B/C atom at 10 K for epitaxial graphene. Additional PNR measurements on graphene grown on a non-magnetic Ni_9Mo_1 substrate, where no magnetic moment in graphene is measured, suggest that the origin of the induced magnetic moment is due to the opening of the graphene's Dirac cone as a result of the strong C pz-3d hybridization.
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Submitted 21 March, 2022; v1 submitted 25 January, 2021;
originally announced January 2021.
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Large Gap Quantum Anomalous Hall Effect in a Type-I Heterostructure Between a Magnetically Doped Topological Insulator and Antiferromagnetic Insulator
Authors:
Anh Pham,
Ling-Jie Zhou,
Yi-Fan Zhao,
Cui-Zu Chang,
Timothy Charlton,
P. Ganesh
Abstract:
Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of thermodynamic, magnetic and topological properties of heterostructures, we demonstrate that forming a type-I heterostructure between a wide gap antiferromagnetic insulato…
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Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of thermodynamic, magnetic and topological properties of heterostructures, we demonstrate that forming a type-I heterostructure between a wide gap antiferromagnetic insulator Cr$_2$O$_3$ and a TI-film, such as Sb$_2$Te$_3$, can lead to pinning of the Fermi-level at the center of the gap, even when magnetically doped. Cr-doping in the heterostructure increases the gap to $\sim$ 64.5 meV, with a large Zeeman energy from the interfacial Cr dopants, thus overcoming potential metallicity due to band bending effects. By fitting the band-structure around the Fermi-level to a 4-band k.p model Hamiltonian, we show that Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ is a Chern insulator with a Chern number C = -1. Transport calculations further show chiral edge-modes localized at the top/bottom of the TI-film to be the dominant current carriers in the material. Our predictions of a large interfacial magnetism due to Cr-dopants, that coupled antiferromagnetically to the AFM substrate is confirmed by our polarised neutron reflectometry measurements on MBE grown Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructures, and is consistent with a positive exchange bias measured in such systems recently. Consequently, Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructure represents a promising platform for the development of functional topological magnetic devices, with high tunability.
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Submitted 24 January, 2021;
originally announced January 2021.
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Antiferromagnetism of Double Molybdate LiFe(MoO$_4$)$_2$
Authors:
Meifeng Liu,
Yang Zhang,
Tao Zou,
V. Ovidiu Garlea,
T. Charlton,
Yu Wang,
Fei Liu,
Yunlong Xie,
Xiang Li,
Lun Yang,
Biwen Li,
Xiuzhang Wang,
Shuai Dong,
Jun-Ming Liu
Abstract:
The magnetic properties of the spin-5/2 double molybdate LiFe(MoO$_4$)$_2$ have been characterized by heat capacity, magnetic susceptibility, and neutron powder diffraction techniques. Unlike the multiferroic system LiFe(MoO$_4$)$_2$ which exhibits two successive magnetic transitions, LiFe(MoO$_4$)$_2$ undergoes only one antiferromagnetic transition at $T_N$ ~ 23.8 K. Its antiferromagnetic magneti…
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The magnetic properties of the spin-5/2 double molybdate LiFe(MoO$_4$)$_2$ have been characterized by heat capacity, magnetic susceptibility, and neutron powder diffraction techniques. Unlike the multiferroic system LiFe(MoO$_4$)$_2$ which exhibits two successive magnetic transitions, LiFe(MoO$_4$)$_2$ undergoes only one antiferromagnetic transition at $T_N$ ~ 23.8 K. Its antiferromagnetic magnetic structure with the commensurate propagation vector k = (0, 0.5, 0) has been determined. Density functional theory calculations confirm the antiferromagnetic ground state and provide a numerical estimate of the relevant exchange coupling constants.
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Submitted 20 July, 2020;
originally announced July 2020.
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Study of magnetic interface and its effect in Fe/NiFe bilayers of alternating order
Authors:
Sagarika Nayak,
Sudhansu Sekhar Das,
Braj Bhusan Singh,
Timothy R. Charlton,
Christy J. Kinane,
Subhankar Bedanta
Abstract:
We present a comprehensive study on the magnetization reversal in Fe/NiFe bilayer system by alternating the order of the magnetic layers. All the samples show growth-induced uniaxial magnetic anisotropy due to oblique angle deposition technique. Strong interfacial exchange coupling between the Fe and NiFe layers leads to the single-phase hysteresis loops in the bilayer system. The strength of coup…
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We present a comprehensive study on the magnetization reversal in Fe/NiFe bilayer system by alternating the order of the magnetic layers. All the samples show growth-induced uniaxial magnetic anisotropy due to oblique angle deposition technique. Strong interfacial exchange coupling between the Fe and NiFe layers leads to the single-phase hysteresis loops in the bilayer system. The strength of coupling being dependent on the interface changes upon alternating the order of magnetic layers. The magnetic parameters such as coercivity HC, and anisotropy field HK become almost doubled when NiFe layer is grown over the Fe layers. This enhancement in the magnetic parameters is primarily dependent on the increase of the thickness and magnetic moment of Fe-NiFe interfacial layer as revealed from the polarized neutron reectivity (PNR) data of the bilayer samples. The difference in the thickness and magnetization of the Fe-NiFe interfacial layer indicates the modification of the microstructure by alternating the order of the magnetic layers of the bilayers. The interfacial magnetic moment increased by almost 18 % when NiFe layer is grown over the Fe layer. In spite of the different values of anisotropy fields and modified interfacial exchange coupling, the Gilbert damping constant values of the ferromagnetic bilayers remain similar to single NiFe layer.
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Submitted 10 June, 2020;
originally announced June 2020.
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Exploiting symmetry-mismatch to control magnetism in a ferroelastic heterostructure
Authors:
Er-Jia Guo,
Ryan Desautels,
Dongkyu Lee,
Manuel A. Roldan,
Zhaoliang Liao,
Timothy Charlton,
Haile Ambaye,
Jamie Molaison,
Reinhard Boehler,
David Keavney,
Andreas Herklotz,
T. Zac Ward,
Ho Nyung Lee,
Michael R. Fitzsimmons
Abstract:
In the bulk, LaCoO3 (LCO) is a paramagnet, yet in tensile strained thin films at low temperature ferromagnetism (FM) is observed, and its origin remains unresolved. Polarized neutron reflectometry (PNR) is a powerful tool to determine the depth profiles of the structure and magnetization simultaneously and thus the evolution of the interfacial FM with strain can be accurately revealed. Here we qua…
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In the bulk, LaCoO3 (LCO) is a paramagnet, yet in tensile strained thin films at low temperature ferromagnetism (FM) is observed, and its origin remains unresolved. Polarized neutron reflectometry (PNR) is a powerful tool to determine the depth profiles of the structure and magnetization simultaneously and thus the evolution of the interfacial FM with strain can be accurately revealed. Here we quantitatively measured the distribution of atomic density and magnetization in LCO films by PNR and found that the LCO layers near the heterointerfaces exhibit a reduced magnetization but an enhanced atomic density, whereas the interior shows the opposite trend. We attribute the nonuniformity to the symmetry mismatch at the interface, which induces a structural distortion related to the ferroelasticity of LCO. This assertion is tested by systematic application of hydrostatic pressure during the PNR experiments. These results provide unique insights into mechanisms driving FM in strained LCO films while offering a tantalizing observation that tunable deformation of the CoO6 octahedra in combination with the ferroelastic order parameter.
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Submitted 8 March, 2019;
originally announced March 2019.
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Nanoscale ferroelastic twins formed in strained LaCoO3 films
Authors:
Er-Jia Guo,
Ryan Desautels,
David Keavney,
Manue A. Roldan,
Brian J. Kirby,
Dongkyu Lee,
Zhaoliang Liao,
Timothy Charlton,
Andreas Herklotz,
T. Zac Ward,
Michael R. Fitzsimmons,
Ho Nyung Lee
Abstract:
The coexistence and coupling of ferroelasticity and magnetic ordering in a single material offers a great opportunity to realize novel devices with multiple tuning knobs. Complex oxides are a particularly promising class of materials to find multiferroic interactions as they often possess rich phase diagrams and the interactions are very sensitive to external perturbations. Still, there are very f…
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The coexistence and coupling of ferroelasticity and magnetic ordering in a single material offers a great opportunity to realize novel devices with multiple tuning knobs. Complex oxides are a particularly promising class of materials to find multiferroic interactions as they often possess rich phase diagrams and the interactions are very sensitive to external perturbations. Still, there are very few examples of these systems. Here we report the observation of twinning domains in ferroelastic LaCoO3 epitaxial thin films and their geometric control of structural symmetry that are intimately linked to the material electronic and magnetic states. A unidirectional structural modulation is achieved by selective choice of substrates possessing two-fold rotational symmetry. This modulation perturbs the crystal field splitting energy, leading to unexpected in plane anisotropy of orbital configuration and magnetization. These findings demonstrate the utilization of structural modulation to control multiferroic interactions and may enable a great potential for stimulation of exotic phenomena through artificial domain engineering.
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Submitted 31 January, 2019;
originally announced February 2019.
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Giant Electrostatic Modification of Magnetism via Electrolyte-Gate-Induced Cluster Percolation in La$_{1-x}$Sr$_x$CoO$_{3-δ}$
Authors:
Jeff Walter,
T. Charlton,
H. Ambaye,
M. R. Fitzsimmons,
Peter P. Orth,
R. M. Fernandes,
Chris Leighton
Abstract:
Electrical control of magnetism is a long-standing goal in physics and technology, recently developed electrolyte gating techniques providing a promising route to realization. Validating a recent theoretical prediction, here we demonstrate large enhancement of electrostatic modulation of ferromagnetic order in ion-gel-gated ultrathin La$_{0.5}$Sr$_{0.5}$CoO$_{3-δ}$ by thickness-tuning to the brink…
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Electrical control of magnetism is a long-standing goal in physics and technology, recently developed electrolyte gating techniques providing a promising route to realization. Validating a recent theoretical prediction, here we demonstrate large enhancement of electrostatic modulation of ferromagnetic order in ion-gel-gated ultrathin La$_{0.5}$Sr$_{0.5}$CoO$_{3-δ}$ by thickness-tuning to the brink of a magnetic percolation transition. Application of only 3-4 V then drives a transition from a short-range-ordered insulator to a robust long-range ferromagnetic metal, realizing giant electrostatic Curie temperature modulation over a 150 K window. In operando polarized neutron reflectometry confirms gate-controlled ferromagnetism, also demonstrating unusually deep penetration of induced magnetization, in further agreement with theory.
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Submitted 24 July, 2018;
originally announced July 2018.
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Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films
Authors:
Charles S. Spencer,
Jacob Gayles,
Nicholas A. Porter,
Satoshi Sugimoto,
Zabeada Aslam,
Christian J. Kinane,
Timothy R. Charlton,
Frank Freimuth,
Stanislav Chadov,
Sean Langridge,
Jairo Sinova,
Claudia Felser,
Stefan Blügel,
Yuriy Mokrousov,
Christopher H. Marrows
Abstract:
Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for non-magnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed usin…
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Epitaxial films of the B20-structure alloy Fe$_{1-y}$Co$_y$Ge were grown by molecular beam epitaxy on Si (111) substrates. The magnetization varied smoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe to zero for non-magnetic CoGe. The chiral lattice structure leads to a Dzyaloshinskii-Moriya interaction (DMI), and the films' helical magnetic ground state was confirmed using polarized neutron reflectometry measurements. The pitch of the spin helix, measured by this method, varies with Co content $y$ and diverges at $y \sim 0.45$. This indicates a zero-crossing of the DMI, which we reproduced in calculations using first principle methods. We also measured the longitudinal and Hall resistivity of our films as a function of magnetic field, temperature, and Co content $y$. The Hall resistivity is expected to contain contributions from the ordinary, anomalous, and topological Hall effects. Both the anomalous and topological Hall resistivities show peaks around $y \sim 0.5$. Our first principles calculations show a peak in the topological Hall constant at this value of $y$, related to the strong spin-polarisation predicted for intermediate values of $y$. Half-metallicity is predicted for $y = 0.6$, consistent with the experimentally observed linear magnetoresistance at this composition. Whilst it is possible to reconcile theory with experiment for the various Hall effects for FeGe, the large topological Hall resistivities for $y \sim 0.5$ are much larger then expected when the very small emergent fields associated with the divergence in the DMI are taken into account.
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Submitted 8 June, 2018; v1 submitted 8 March, 2018;
originally announced March 2018.
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Manipulation of the spin helix in FeGe thin films and FeGe/Fe multilayers
Authors:
Nicholas A. Porter,
Charles S. Spencer,
Rowan C. Temple,
Christian J. Kinane,
Timothy R. Charlton,
Sean Langridge,
Christopher H. Marrows
Abstract:
Magnetic materials without structural inversion symmetry can display the Dzyaloshinskii-Moriya interaction, which manifests itself as chiral magnetic ground states. These chiral states can interact in complex ways with applied fields and boundary conditions provided by finite sample sizes that are of the order of the lengthscale of the chiral states. Here we study epitaxial thin films of FeGe with…
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Magnetic materials without structural inversion symmetry can display the Dzyaloshinskii-Moriya interaction, which manifests itself as chiral magnetic ground states. These chiral states can interact in complex ways with applied fields and boundary conditions provided by finite sample sizes that are of the order of the lengthscale of the chiral states. Here we study epitaxial thin films of FeGe with a thickness close to the helix pitch of the helimagnetic ground state, which is about 70 nm, by conventional magnetometry and polarized neutron reflectometry. We show that the helix in an FeGe film reverses under the application of a field by deforming into a helicoidal form, with twists in the helicoid being forced out of the film surfaces on the way to saturation. An additional boundary condition was imposed by exchange coupling a ferromagnetic Fe layer to one of the interfaces of an FeGe layer. This forces the FeGe spins at the interface to point in the same direction as the Fe, preventing node expulsion and giving a handle by which the reversal of the helical magnet may be controlled.
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Submitted 4 June, 2015;
originally announced June 2015.
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Temperature controlled motion of an antiferromagnet-ferromagnet interface within a dopant-graded FeRh epilayer
Authors:
C. Le Graët,
T. R. Charlton,
M. McLaren,
M. Loving,
S. A. Morley,
C. J. Kinane,
R. M. D. Brydson,
L. H. Lewis,
S. Langridge,
C. H. Marrows
Abstract:
Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by doping other metals onto the Rh site. We have taken advantage of thi…
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Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by doping other metals onto the Rh site. We have taken advantage of this to yield control over the transition process by preparing an epilayer with oppositely directed doping gradients of Pd and Ir throughout its height, yielding a gradual transition that occurs between 350~K and 500~K. As the sample is heated, a horizontal antiferromagnetic-ferromagnetic phase boundary domain wall moves gradually up through the layer, its position controlled by the temperature. This mobile magnetic domain wall affects the magnetisation and resistivity of the layer in a way that can be controlled, and hence exploited, for novel device applications.
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Submitted 23 December, 2014;
originally announced December 2014.
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Observation of a temperature dependent asymmetry in the domain structure of a Pd doped FeRh epilayer
Authors:
C. J. Kinane,
M. Loving,
M. A. de Vries,
R. Fan,
T. R. Charlton,
J. S. Claydon,
D. A. Arena,
F. Maccherozzi,
S. S. Dhesi,
D. Heiman,
C. H. Marrows,
L. H. Lewis,
Sean Langridge
Abstract:
Using X-ray photoelectron emission microscopy we have observed the coexistence of ferromagnetic and antiferromagnetic phases in a (3 at.%)Pd-doped FeRh epilayer. By quantitatively analyzing the resultant images we observe that as the epilayer transforms there is a change in magnetic domain symmetry from predominantly twofold at lower temperatures through to an equally weighted combination of both…
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Using X-ray photoelectron emission microscopy we have observed the coexistence of ferromagnetic and antiferromagnetic phases in a (3 at.%)Pd-doped FeRh epilayer. By quantitatively analyzing the resultant images we observe that as the epilayer transforms there is a change in magnetic domain symmetry from predominantly twofold at lower temperatures through to an equally weighted combination of both four and twofold symmetries at higher temperature. It is postulated that the lowered symmetry Ising-like nematic phase resides at the near-surface of the epilayer. This behavior is different to that of undoped FeRh suggesting that the variation in symmetry is driven by the competing structural and electronic interactions in the nanoscale FeRh film coupled with the effect of the chemical doping disorder.
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Submitted 8 July, 2014;
originally announced July 2014.
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Giant topological Hall effect in strained Fe$_{0.7}$Co$_{0.3}$Si epilayers
Authors:
Nicholas A. Porter,
Priyasmita Sinha,
Michael B. Ward,
Alexey N. Dobrynin,
Rik M. D. Brydson,
Timothy R. Charlton,
Christian J. Kinane,
Michael D. Robertson,
Sean Langridge,
Christopher H. Marrows
Abstract:
The coupling of electron spin to real-space magnetic textures leads to a variety of interesting magnetotransport effects. The skyrmionic spin textures often found in chiral B20-lattice magnets give rise, via real-space Berry phases, to the topological Hall effect, but it is typically rather small. Here, B20-ordered Fe$_{0.7}$Co$_{0.3}$Si epilayers display a giant topological Hall effect due to the…
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The coupling of electron spin to real-space magnetic textures leads to a variety of interesting magnetotransport effects. The skyrmionic spin textures often found in chiral B20-lattice magnets give rise, via real-space Berry phases, to the topological Hall effect, but it is typically rather small. Here, B20-ordered Fe$_{0.7}$Co$_{0.3}$Si epilayers display a giant topological Hall effect due to the combination of three favourable properties: they have a high spin-polarisation, a large ordinary Hall coefficient, and dense chiral spin textures. The topological Hall resistivity is as large as 820 n$Ω$cm at helium temperatures. Moreover, we observed a drop in the longitudinal resistivity of 100 n$Ω$cm at low temperatures in the same field range, suggesting that it is also of topological origin. That such strong effects can be found in material grown in thin film form on commercial silicon wafer bodes well for skyrmion-based spintronics.
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Submitted 5 December, 2013;
originally announced December 2013.
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Thickness-dependent magnetic properties of oxygen-deficient EuO
Authors:
M. Barbagallo,
T. Stollenwerk,
J. Kroha,
N. -J. Steinke,
N. D. M. Hine,
J. F. K. Cooper,
C. H. W. Barnes,
A. Ionescu,
P. M. D. S. Monteiro,
J. -Y. Kim,
K. R. A. Ziebeck,
C. J. Kinane,
R. M. Dalgliesh,
T. R. Charlton,
S. Langridge
Abstract:
We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that…
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We have studied how the magnetic properties of oxygen-deficient EuO sputtered thin films vary as a function of thickness. The magnetic moment, measured by polarized neutron reflectometry, and the Curie temperature are found to decrease with reducing thickness. Our results indicate that the reduced number of nearest neighbors, band bending and the partial depopulation of the electronic states that carry the spins associated with the 4f orbitals of Eu are all contributing factors in the surface-induced change of the magnetic properties of EuO$_{1-x}$.
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Submitted 21 April, 2011;
originally announced April 2011.
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Neutron Reflection from the Surface of Liquid 4He with and without a Layer of 3He
Authors:
T. R. Charlton,
R. M. Dalgliesh,
A. Ganshin,
O. Kirichek,
S. Langridge,
P. V. E. McClintock
Abstract:
We report and discuss the first neutron reflection measurements from the free surface of normal and superfluid 4He and of liquid 3He-4He mixture. In case of liquid 4He the surface roughness is different above and below the lambda transition, being smoother in the superfluid state. For the superfluid, we also observe the formation of a surface layer ~200 A thick which has a subtly different neutr…
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We report and discuss the first neutron reflection measurements from the free surface of normal and superfluid 4He and of liquid 3He-4He mixture. In case of liquid 4He the surface roughness is different above and below the lambda transition, being smoother in the superfluid state. For the superfluid, we also observe the formation of a surface layer ~200 A thick which has a subtly different neutron scattering cross-section. The results can be interpreted as an enhancement of Bose-Einstein condensate fraction close to the helium surface. We find that the addition of 3He isotopic impurities leads to the formation of Andreev levels at low temperatures.
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Submitted 19 November, 2008;
originally announced November 2008.
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Neutron reflection from the surface of normal and superfluid 4He
Authors:
T. R. Charlton,
R. M. Dalgliesh,
A. Ganshin,
O. Kirichek,
S. Langridge,
P. V. E. McClintock
Abstract:
The reflection of neutrons from a helium surface has been observed for the first time. The 4He surface is smoother in the superfluid state at 1.54 K than in the case of the normal liquid at 2.3 K. In the superfluid state we also observe a surface layer ~200 Angstroms thick which has a subtly different neutron scattering cross-section, which may be explained by an enhanced Bose-Einstein condensat…
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The reflection of neutrons from a helium surface has been observed for the first time. The 4He surface is smoother in the superfluid state at 1.54 K than in the case of the normal liquid at 2.3 K. In the superfluid state we also observe a surface layer ~200 Angstroms thick which has a subtly different neutron scattering cross-section, which may be explained by an enhanced Bose-Einstein condensate fraction close to the helium surface.
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Submitted 5 December, 2007;
originally announced December 2007.
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Evidence for nonmonotonic magnetic field penetration in a type-I superconductor
Authors:
V. F. Kozhevnikov,
C. V. Giuraniuc,
M. J. Van Bael,
K. Temst,
C. Van Haesendonck,
T. M. Mishonov,
T. Charlton,
R. M. Dalgliesh,
Yu. N. Khaidukov,
Yu. V. Nikitenko,
V. L. Aksenov,
V. N. Gladilin,
V. M. Fomin,
J. T. Devreese,
J. O. Indekeu
Abstract:
Polarized neutron reflectometry (PNR) provides evidence that nonlocal electrodynamics governs the magnetic field penetration in an extreme low-k superconductor. The sample is an indium film with a large elastic mean free path (11 mkm) deposited on a silicon oxide wafer. It is shown that PNR can resolve the difference between the reflected neutron spin asymmetries predicted by the local and nonlo…
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Polarized neutron reflectometry (PNR) provides evidence that nonlocal electrodynamics governs the magnetic field penetration in an extreme low-k superconductor. The sample is an indium film with a large elastic mean free path (11 mkm) deposited on a silicon oxide wafer. It is shown that PNR can resolve the difference between the reflected neutron spin asymmetries predicted by the local and nonlocal theories of superconductivity. The experimental data support the nonlocal theory, which predicts a nonmonotonic decay of the magnetic field.
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Submitted 5 December, 2007; v1 submitted 14 April, 2007;
originally announced April 2007.
