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High-kinetic inductance NbN films for high-quality compact superconducting resonators
Authors:
Simone Frasca,
Ivo Nikolaev Arabadzhiev,
Sebastien Yves Bros de Puechredon,
Fabian Oppliger,
Vincent Jouanny,
Roberto Musio,
Marco Scigliuzzo,
Fabrizio Minganti,
Pasquale Scarlino,
Edoardo Charbon
Abstract:
Niobium nitride (NbN) is a particularly promising material for quantum technology applications, as entails the degree of reproducibility necessary for large-scale of superconducting circuits. We demonstrate that resonators based on NbN thin films present a one-photon internal quality factor above 10$^5$ maintaining a high impedance (larger than 2k$Ω$), with a footprint of approximately 50x100 $μ$m…
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Niobium nitride (NbN) is a particularly promising material for quantum technology applications, as entails the degree of reproducibility necessary for large-scale of superconducting circuits. We demonstrate that resonators based on NbN thin films present a one-photon internal quality factor above 10$^5$ maintaining a high impedance (larger than 2k$Ω$), with a footprint of approximately 50x100 $μ$m$^2$ and a self-Kerr nonlinearity of few tenths of Hz. These quality factors, mostly limited by losses induced by the coupling to two-level systems, have been maintained for kinetic inductances ranging from tenths to hundreds of pH/square. We also demonstrate minimal variations in the performance of the resonators during multiple cooldowns over more than nine months. Our work proves the versatility of niobium nitride high-kinetic inductance resonators, opening perspectives towards the fabrication of compact, high-impedance and high-quality multimode circuits, with sizable interactions.
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Submitted 27 February, 2023;
originally announced February 2023.
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Resolving the controversy in biexciton binding energy of cesium lead halide perovskite nanocrystals through heralded single-particle spectroscopy
Authors:
Gur Lubin,
Gili Yaniv,
Miri Kazes,
Arin Can Ulku,
Ivan Michel Antolovic,
Samuel Burri,
Claudio Bruschini,
Edoardo Charbon,
Venkata Jayasurya Yallapragada,
Dan Oron
Abstract:
Understanding exciton-exciton interaction in multiply-excited nanocrystals is crucial to their utilization as functional materials. Yet, for lead halide perovskite nanocrystals, which are promising candidates for nanocrystal-based technologies, numerous contradicting values have been reported for the strength and sign of their exciton-exciton interaction. In this work we unambiguously determine th…
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Understanding exciton-exciton interaction in multiply-excited nanocrystals is crucial to their utilization as functional materials. Yet, for lead halide perovskite nanocrystals, which are promising candidates for nanocrystal-based technologies, numerous contradicting values have been reported for the strength and sign of their exciton-exciton interaction. In this work we unambiguously determine the biexciton binding energy in single cesium lead halide perovskite nanocrystals at room temperature. This is enabled by the recently introduced SPAD array spectrometer, capable of temporally isolating biexciton-exciton emission cascades while retaining spectral resolution. We demonstrate that CsPbBr$_3$ nanocrystals feature an attractive exciton-exciton interaction, with a mean biexciton binding energy of 10 meV. For CsPbI$_3$ nanocrystals we observe a mean biexciton binding energy that is close to zero, and individual nanocrystals show either weakly attractive or weakly repulsive exciton-exciton interaction. We further show that within ensembles of both materials, single-nanocrystal biexciton binding energies are correlated with the degree of charge-carrier confinement.
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Submitted 31 July, 2021;
originally announced August 2021.
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Heralded spectroscopy reveals exciton-exciton correlations in single colloidal quantum dots
Authors:
Gur Lubin,
Ron Tenne,
Arin Can Ulku,
Ivan Michel Antolovic,
Samuel Burri,
Sean Karg,
Venkata Jayasurya Yallapragada,
Claudio Bruschini,
Edoardo Charbon,
Dan Oron
Abstract:
Multiply-excited states in semiconductor quantum dots feature intriguing physics and play a crucial role in nanocrystal-based technologies. While photoluminescence provides a natural probe to investigate these states, room temperature single-particle spectroscopy of their emission has so far proved elusive due to the temporal and spectral overlap with emission from the singly-excited and charged s…
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Multiply-excited states in semiconductor quantum dots feature intriguing physics and play a crucial role in nanocrystal-based technologies. While photoluminescence provides a natural probe to investigate these states, room temperature single-particle spectroscopy of their emission has so far proved elusive due to the temporal and spectral overlap with emission from the singly-excited and charged states. Here we introduce biexciton heralded spectroscopy, enabled by a single-photon avalanche diode array based spectrometer. This allows us to directly observe biexciton-exciton emission cascades and measure the biexciton binding energy of single quantum dots at room temperature, even though it is well below the scale of thermal broadening and spectral diffusion. Furthermore, we uncover correlations hitherto masked in ensembles, of the biexciton binding energy with both charge-carrier confinement and fluctuations of the local electrostatic potential. Heralded spectroscopy has the potential of greatly extending our understanding of charge-carrier dynamics in multielectron systems and of parallelization of quantum optics protocols.
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Submitted 31 July, 2021;
originally announced August 2021.
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Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip
Authors:
Andrea Ruffino,
Tsung-Yeh Yang,
John Michniewicz,
Yatao Peng,
Edoardo Charbon,
Miguel Fernando Gonzalez-Zalba
Abstract:
Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quan…
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Solid-state quantum computers require classical electronics to control and readout individual qubits and to enable fast classical data processing [1-3]. Integrating both subsystems at deep cryogenic temperatures [4], where solid-state quantum processors operate best, may solve some major scaling challenges, such as system size and input/output (I/O) data management [5]. Spin qubits in silicon quantum dots (QDs) could be monolithically integrated with complementary metal-oxide-semiconductor (CMOS) electronics using very-large-scale integration (VLSI) and thus leveraging over wide manufacturing experience in the semiconductor industry [6]. However, experimental demonstrations of integration using industrial CMOS at mK temperatures are still in their infancy. Here we present a cryogenic integrated circuit (IC) fabricated using industrial CMOS technology that hosts three key ingredients of a silicon-based quantum processor: QD arrays (arranged here in a non-interacting 3x3 configuration), digital electronics to minimize control lines using row-column addressing and analog LC resonators for multiplexed readout, all operating at 50 mK. With the microwave resonators (6-8 GHz range), we show dispersive readout of the charge state of the QDs and perform combined time- and frequency-domain multiplexing, enabling scalable readout while reducing the overall chip footprint. This modular architecture probes the limits towards the realization of a large-scale silicon quantum computer integrating quantum and classical electronics using industrial CMOS technology.
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Submitted 20 January, 2021;
originally announced January 2021.
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Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
Authors:
M. F. Gonzalez-Zalba,
S. de Franceschi,
E. Charbon,
T. Meunier,
M. Vinet,
A. S. Dzurak
Abstract:
Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in compu…
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Complementary metal-oxide semiconductor (CMOS) technology has radically reshaped the world by taking humanity to the digital age. Cramming more transistors into the same physical space has enabled an exponential increase in computational performance, a strategy that has been recently hampered by the increasing complexity and cost of miniaturization. To continue achieving significant gains in computing performance, new computing paradigms, such as quantum computing, must be developed. However, finding the optimal physical system to process quantum information, and scale it up to the large number of qubits necessary to build a general-purpose quantum computer, remains a significant challenge. Recent breakthroughs in nanodevice engineering have shown that qubits can now be manufactured in a similar fashion to silicon field-effect transistors, opening an opportunity to leverage the know-how of the CMOS industry to address the scaling challenge. In this article, we focus on the analysis of the scaling prospects of quantum computing systems based on CMOS technology.
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Submitted 8 April, 2023; v1 submitted 23 November, 2020;
originally announced November 2020.
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CMOS-based cryogenic control of silicon quantum circuits
Authors:
Xiao Xue,
Bishnu Patra,
Jeroen P. G. van Dijk,
Nodar Samkharadze,
Sushil Subramanian,
Andrea Corna,
Charles Jeon,
Farhana Sheikh,
Esdras Juarez-Hernandez,
Brando Perez Esparza,
Huzaifa Rampurawala,
Brent Carlton,
Surej Ravikumar,
Carlos Nieva,
Sungwon Kim,
Hyung-Jin Lee,
Amir Sammak,
Giordano Scappucci,
Menno Veldhorst,
Fabio Sebastiano,
Masoud Babaie,
Stefano Pellerano,
Edoardo Charbon,
Lieven M. K. Vandersypen
Abstract:
The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, a major bottleneck appears between the quantum chip in a dilution refrigerator and the room temperature electronics. Advanced l…
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The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, a major bottleneck appears between the quantum chip in a dilution refrigerator and the room temperature electronics. Advanced lithography supports the fabrication of both CMOS control electronics and qubits in silicon. When the electronics are designed to operate at cryogenic temperatures, it can ultimately be integrated with the qubits on the same die or package, overcoming the wiring bottleneck. Here we report a cryogenic CMOS control chip operating at 3K, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20mK. We first benchmark the control chip and find electrical performance consistent with 99.99% fidelity qubit operations, assuming ideal qubits. Next, we use it to coherently control actual silicon spin qubits and find that the cryogenic control chip achieves the same fidelity as commercial instruments. Furthermore, we highlight the extensive capabilities of the control chip by programming a number of benchmarking protocols as well as the Deutsch-Josza algorithm on a two-qubit quantum processor. These results open up the path towards a fully integrated, scalable silicon-based quantum computer.
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Submitted 29 September, 2020;
originally announced September 2020.
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Avalanche photodiodes based on MoS2/Si heterojunctions
Authors:
Oriol Lopez-Sanchez,
Dumitru Dumcenco,
Edoardo Charbon,
Andras Kis
Abstract:
Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2, biological imaging3, and medical imaging4 where they offer speed and sensitivity superior to those of classical p-n junction-based photodetectors. The APD principle…
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Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2, biological imaging3, and medical imaging4 where they offer speed and sensitivity superior to those of classical p-n junction-based photodetectors. The APD principle of operation is based on photocurrent multiplication through impact ionization in reverse-biased p-n junctions. APDs can either operate in proportional mode, where the bias voltage is below breakdown, or in Geiger mode, where the bias voltage is above breakdown. In proportional mode, the multiplication gain is finite, thus allowing for photon energy discrimination, while in Geiger mode of operation the multiplication gain is virtually infinite and a self-sustaining avalanche may be triggered, thus allowing detection of single photons5. Here, we demonstrate APDs based on vertically stacked monolayer MoS2 and p-Si, forming an abrupt p-n heterojunction. With this device, we demonstrate carrier multiplication exceeding 1000. Even though such multiplication factors in APDs are commonly accompanied by high noise, our devices show extremely low noise levels comparable with those in regular photodiodes. These heterostructures allow the realization of simple and inexpensive high-performance and low-noise photon counters based on transition metal dichalcogenides.
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Submitted 12 November, 2014;
originally announced November 2014.
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Fast fluorescence dynamics in non-ratiometric calcium indicators
Authors:
M. Gersbach,
D. L. Boiko,
C. Niclass,
C. Petersen,
E. Charbon
Abstract:
A fluorescence decay of high-affinity non-ratiometric Ca2+ indicator Oregon Green BAPTA-1 (OGB-1) is analyzed with unprecedented temporal resolution in the two-photon excitation regime. A triple exponential decay is shown to best fit the fluorescence dynamics of OGB-1. We provide a new model for accurate measurements of the free Ca2+ concentration and dissociation constants of non-ratiometric ca…
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A fluorescence decay of high-affinity non-ratiometric Ca2+ indicator Oregon Green BAPTA-1 (OGB-1) is analyzed with unprecedented temporal resolution in the two-photon excitation regime. A triple exponential decay is shown to best fit the fluorescence dynamics of OGB-1. We provide a new model for accurate measurements of the free Ca2+ concentration and dissociation constants of non-ratiometric calcium indicators.
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Submitted 13 November, 2008; v1 submitted 17 July, 2008;
originally announced July 2008.
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A Solid-State System for High Temporal Resolution Fluorescence Lifetime Measurements
Authors:
M. Gersbach,
D. L. Boiko,
C. Niclass,
C. Petersen,
E. Charbon
Abstract:
A system for time-correlated single photon counting applications based on CMOS single photon avalanche diodes is presented. An instrument response function of 79 ps allows a fluorescence decay of high-affinity Ca2+ indicator Oregon Green BAPTA-1 to be analyzed with unprecedented temporal resolution in the two-photon excitation regime. A triple exponential decay model is shown to best fit the flu…
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A system for time-correlated single photon counting applications based on CMOS single photon avalanche diodes is presented. An instrument response function of 79 ps allows a fluorescence decay of high-affinity Ca2+ indicator Oregon Green BAPTA-1 to be analyzed with unprecedented temporal resolution in the two-photon excitation regime. A triple exponential decay model is shown to best fit the fluorescence dynamics of OGB-1.
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Submitted 20 March, 2008;
originally announced March 2008.