Mechanism for Switchability in Electron-Doped Ferroelectric Interfaces
Authors:
Kelsey S. Chapman,
W. A. Atkinson
Abstract:
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities afforded by polar interfaces. In this work, we explore a simple model for such an interface and demonstrate a mechanism by which a metallic ferroelectric substra…
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With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities afforded by polar interfaces. In this work, we explore a simple model for such an interface and demonstrate a mechanism by which a metallic ferroelectric substrate may be switched by a bias voltage. This finding is in contrast to the reasonable expectation that hysteresis is prevented by screening of external fields in ferroelectric metals. Instead, the electron gas binds to polarization gradients to form a compensated state. Uncompensated electrons, which may screen external fields, are generated either when the electron density exceeds the ferroelectric polarization or when the bias voltage exceeds a "spillover" threshold. We propose that switchable thin films may be optimized by choosing an electron density that is slightly less than the lattice polarization. In addition to the high-polarization states, we find that thin metallic films also have a low-polarization state with average polarization near zero. Unlike in insulating films, where the polarization is small everywhere in this state, the low-polarization state in the metallic films consists of two head-to-head domains of opposite polarization. This domain formation is enabled by the screening of depolarizing fields by the electron gas.
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Submitted 9 February, 2022; v1 submitted 16 August, 2021;
originally announced August 2021.
Modified transverse Ising model for the dielectric properties of SrTiO$_3$ films and interfaces
Authors:
Kelsey S. Chapman,
W. A. Atkinson
Abstract:
The transverse Ising model (TIM), with pseudospins representing the lattice polarization, is often used as a simple description of ferroelectric materials. However, we demonstrate that the TIM, as it is usually formulated, provides an incorrect description of SrTiO$_{3}$ films and interfaces because of its inadequate treatment of spatial inhomogeneity. We correct this deficiency by adding a pseudo…
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The transverse Ising model (TIM), with pseudospins representing the lattice polarization, is often used as a simple description of ferroelectric materials. However, we demonstrate that the TIM, as it is usually formulated, provides an incorrect description of SrTiO$_{3}$ films and interfaces because of its inadequate treatment of spatial inhomogeneity. We correct this deficiency by adding a pseudospin anisotropy to the model. We demonstrate the physical need for this term by comparison of the TIM to a typical Landau-Ginzburg-Devonshire model. We then demonstrate the physical consequences of the modification for two model systems: a ferroelectric thin film, and a metallic LaAlO$_{3}$/SrTiO$_{3}$ interface. We show that, in both cases, the modified TIM has a substantially different polarization profile than the conventional TIM. In particular, at low temperatures the formation of quantized states at LaAlO$_{3}$/SrTiO$_{3}$ interfaces only occurs in the modified TIM.
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Submitted 15 January, 2020; v1 submitted 17 May, 2019;
originally announced May 2019.
