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Chirality-dependent terahertz topological resonance and inertial dynamics of magnetic skyrmions
Authors:
X. D. Wang,
Y. F. Duan,
H. M. Dong,
Kai Chang
Abstract:
We present a theoretical investigation of the terahertz (THz) optical response of magnetic skyrmions governed by an inertial-modified Thiele equation. By incorporating the inertial mass term, we derive analytical expressions for the THz absorption spectrum of skyrmions, revealing a topological resonance phenomenon tunable via the skyrmion's topological charge $Q$, damping factor $α$, and effective…
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We present a theoretical investigation of the terahertz (THz) optical response of magnetic skyrmions governed by an inertial-modified Thiele equation. By incorporating the inertial mass term, we derive analytical expressions for the THz absorption spectrum of skyrmions, revealing a topological resonance phenomenon tunable via the skyrmion's topological charge $Q$, damping factor $α$, and effective mass $m$. The resonance frequency $ω_0 \propto Q/m$ emerges from the interplay between gyroscopic coupling and inertial mass, enabling precise control over skyrmion dynamics through circularly polarized THz fields. Our results demonstrate that the helical motion trajectories and velocity components of skyrmions depend on the chirality of light and the topological charge $Q$, with critical damping $α_c$ marking the transition to overdamped regimes. Our findings establish an optical method for designing tunable THz devices, such as topological filters and detectors, by exploiting the interplay between magnetic skyrmion topology and the chirality of THz light coupling.
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Submitted 4 July, 2025;
originally announced July 2025.
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The interplay of ferroelectricity and magneto-transport in non-magnetic moiré superlattices
Authors:
Siqi Jiang,
Renjun Du,
Jiawei Jiang,
Gan Liu,
Jiabei Huang,
Yu Du,
Yaqing Han,
Jingkuan Xiao,
Di Zhang,
Fuzhuo Lian,
Wanting Xu,
Siqin Wang,
Lei Qiao,
Kenji Watanabe,
Takashi Taniguchi,
Xiaoxiang Xi,
Wei Ren,
Baigeng Wang,
Alexander S. Mayorov,
Kai Chang,
Hongxin Yang,
Lei Wang,
Geliang Yu
Abstract:
The coupling of ferroelectricity and magnetic order provides rich tunability for engineering material properties and demonstrates great potential for uncovering novel quantum phenomena and multifunctional devices. Here, we report interfacial ferroelectricity in moiré superlattices constructed from graphene and hexagonal boron nitride. We observe ferroelectric polarization in an across-layer moiré…
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The coupling of ferroelectricity and magnetic order provides rich tunability for engineering material properties and demonstrates great potential for uncovering novel quantum phenomena and multifunctional devices. Here, we report interfacial ferroelectricity in moiré superlattices constructed from graphene and hexagonal boron nitride. We observe ferroelectric polarization in an across-layer moiré superlattice with an intercalated layer, demonstrating a remnant polarization comparable to its non-intercalated counterpart. Remarkably, we reveal a magnetic-field enhancement of ferroelectric polarization that persists up to room temperature, showcasing an unconventional amplification of ferroelectricity in materials lacking magnetic elements. This phenomenon, consistent across devices with varying layer configurations, arises purely from electronic rather than ionic contributions. Furthermore, the ferroelectric polarization in turn modulates quantum transport characteristics, suppressing Shubnikov-de Haas oscillations and altering quantum Hall states in polarized phases. This interplay between ferroelectricity and magneto-transport in non-magnetic materials is crucial for exploring magnetoelectric effects and advancing two-dimensional memory and logic applications.
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Submitted 1 July, 2025;
originally announced July 2025.
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Taming Flat Bands with Breathing Superlattices
Authors:
Moru Song,
Jingyu Hu,
Lina Shi,
YongliangZhang,
Kai Chang
Abstract:
Flat bands have become a pillar of modern condensed matter physics and photonics owing to the vanishing group velocity and diverging density of states. Here, we present a paradigmatic scheme to construct arbitrary flat bands on demand by introducing a new type breathing superlattice, where both the number and spectral positions of isolated flat bands can be continuously tailored by simply controll…
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Flat bands have become a pillar of modern condensed matter physics and photonics owing to the vanishing group velocity and diverging density of states. Here, we present a paradigmatic scheme to construct arbitrary flat bands on demand by introducing a new type breathing superlattice, where both the number and spectral positions of isolated flat bands can be continuously tailored by simply controlling the breathing strength. Microscopically, the momentum-independent interband scatterings near the band edge protect them robust against weak intra-cell disorder. By dimensional reduction, we establish a duality between the one-dimensional (1D) breathing superlattice and the 2D Harper-Hofstadter model, where cascade flat bands naturally emerge as the different orders of Landau levels in the weak magnetic flux limit. As a proof of concept, photonic flat bands at optical frequencies are experimentally demonstrated with all-dielectric photonic crystal slabs. Finally, we generalize our scheme to 2D systems to realize partial and omnidirectional flat bands, and discuss the achievement of high-quality factors. Our findings shed new light on the manipulation of flat bands with high band flatness and large usable bandwidth, paving the way for the development of advanced optical devices.
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Submitted 7 April, 2025;
originally announced April 2025.
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Ultralow-pressure mechanical-motion switching of ferroelectric polarization
Authors:
Baoyu Wang,
Xin He,
Jianjun Luo,
Yitong Chen,
Zhixiang Zhang,
Ding Wang,
Shangui Lan,
Peijian Wang,
Xun Han,
Yuda Zhao,
Zheng Li,
Huan Hu,
Yang Xu,
Zhengdong Luo,
Weijin Hu,
Bowen Zhu,
Jian Sun,
Yan Liu,
Genquan Han,
Xixiang Zhang,
Bin Yu,
Kai Chang,
Fei Xue
Abstract:
Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced flexoelectricity with large strain gradients. However, this approach usually requires huge mechanical pressures, which greatly impedes device applications. Here,…
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Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applications. The prevailing mechanical approach is locally induced flexoelectricity with large strain gradients. However, this approach usually requires huge mechanical pressures, which greatly impedes device applications. Here, we report an approach of using triboelectric effect to mechanically, reversibly switch ferroelectric polarization across α-In2Se3 ferroelectric memristors. Through contact electrification and electrostatic induction effects, triboelectric units are used to sensitively detect mechanical forces and generate electrical voltage pulses to trigger α-In2Se3 resistance switching. We realize multilevel resistance states under different mechanical forces, by which a neuromorphic stress system is demonstrated. Strikingly, we achieve the reversal of α-In2Se3 ferroelectric polarization with a record-low mechanical pressure of ~ 10 kPa, and even with tactile touches. Our work provides a fundamental but pragmatic strategy for creating mechanical-tactile ferroelectric memory devices.
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Submitted 24 March, 2025;
originally announced March 2025.
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Anomalous Meets Topological Hall Effect in Cr2Ge2Te6 Heterostructures
Authors:
Xiaofan Cai,
Yaqing Han,
Jiawei Jiang,
Renjun Du,
Di Zhang,
Jiabei Huang,
Siqi Jiang,
Jingkuan Xiao,
Zihao Wang,
Qian Guo,
Wanting Xu,
Fuzhuo Lian,
Siqing Wang,
Bingxian Ou,
Yongqiang Yang,
Kenji Watanabe,
Takashi Taniguchi,
Alexander S. Mayorov,
Konstantin S. Novoselov,
Baigeng Wang,
Kai Chang,
Hongxin Yang,
Lei Wang,
Geliang Yu
Abstract:
Introducing topologically protected skyrmions in graphene holds significant importance for developing high-speed, low-energy spintronic devices. Here, we present a centrosymmetric ferromagnetic graphene/trilayer Cr2Ge2Te6/graphene heterostructure, demonstrating the anomalous and topological Hall effect due to the magnetic proximity effect. Through gate voltage control, we effectively tune the emer…
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Introducing topologically protected skyrmions in graphene holds significant importance for developing high-speed, low-energy spintronic devices. Here, we present a centrosymmetric ferromagnetic graphene/trilayer Cr2Ge2Te6/graphene heterostructure, demonstrating the anomalous and topological Hall effect due to the magnetic proximity effect. Through gate voltage control, we effectively tune the emergence and size of skyrmions. Micromagnetic simulations reveal the formation of skyrmions and antiskyrmions, which respond differently to external magnetic fields, leading to oscillations in the topological Hall signal. Our findings provide a novel pathway for the formation and manipulation of skyrmions in centrosymmetric two-dimensional magnetic systems, offering significant insights for developing topological spintronics.
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Submitted 11 March, 2025; v1 submitted 10 March, 2025;
originally announced March 2025.
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Bicircular Light Induced Multi-State Geometric Current
Authors:
Zhichao Guo,
Zhuocheng Lu,
Hua Wang,
Kai Chang
Abstract:
We investigate the photocurrent induced by bicircular light (BCL) in materials, with a focus on its multi-state geometric nature. BCL, a combination of left- and right-circularly polarized light, can generate both injection and shift currents, originating from the geometric properties of gauge-invariant shift vectors, quantum geometric tensors, and triple-phase products. Crucially, the real parts…
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We investigate the photocurrent induced by bicircular light (BCL) in materials, with a focus on its multi-state geometric nature. BCL, a combination of left- and right-circularly polarized light, can generate both injection and shift currents, originating from the geometric properties of gauge-invariant shift vectors, quantum geometric tensors, and triple-phase products. Crucially, the real parts of the quantum geometric tensors and triple-phase products remain nonzero in centrosymmetric systems, facilitating photocurrent generation in contrast to the traditional shift current bulk photovoltaic effect. Using a diagrammatic approach, we systematically analyze the BCL-induced photocurrents and demonstrate the multi-state geometric nature within a one-dimensional three-site Rice-Mele model. Our findings provide a quantum geometric understanding of BCL-induced photocurrents, underscoring the importance of considering multi-band contributions in real materials.
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Submitted 5 March, 2025;
originally announced March 2025.
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Pure momentum-shift bulk photovoltaic effect in ferroelectric flat-band Mott insulators
Authors:
Zhuocheng Lu,
Zhihao Gong,
Jingshan Qi,
Hua Wang,
Kai Chang
Abstract:
The shift current photovoltaic effect is conventionally understood as the real-space displacement of a wave packet induced by photoexcitation. However, this interpretation becomes insufficient in flat-band systems, where quasiparticles are too massive to accelerate in real space under the optical electric field. Here, we developed a physically consistent method to decompose the shift current into…
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The shift current photovoltaic effect is conventionally understood as the real-space displacement of a wave packet induced by photoexcitation. However, this interpretation becomes insufficient in flat-band systems, where quasiparticles are too massive to accelerate in real space under the optical electric field. Here, we developed a physically consistent method to decompose the shift current into real-space and momentum-space components. A surprising pure momentum-space shift current is found theoretically in flat-band Mott insulator Nb$_3$X$_8$ (X = Cl, Br, I) monolayers. This work underscores that significant shift current responses can emerge even in systems with minimal interband polarization differences, highlighting the potential for exploring novel bulk photovoltaic effects in flat-band Mott insulators.
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Submitted 24 February, 2025; v1 submitted 6 February, 2025;
originally announced February 2025.
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Quantum Geometric Origin of Strain-Induced Ferroelectric Phase Transitions
Authors:
Jiaming Hu,
Ziye Zhu,
Yubo Yuan,
Wenbin Li,
Hua Wang,
Kai Chang
Abstract:
Strain-regulated ferroelectric (FE) materials have long attracted significant attention due to their diverse applications. While soft-phonon theory and the (pseudo) Jahn-Teller effect have achieved considerable success in providing phenomenological descriptions and general understanding, the detailed connection between these perspectives and their microscopic dependence on strain regulation remain…
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Strain-regulated ferroelectric (FE) materials have long attracted significant attention due to their diverse applications. While soft-phonon theory and the (pseudo) Jahn-Teller effect have achieved considerable success in providing phenomenological descriptions and general understanding, the detailed connection between these perspectives and their microscopic dependence on strain regulation remains unclear. Here, under the framework of density-functional perturbation theory (DFPT), we demonstrate that the Berry curvature of electron-phonon coupling (EPC) plays a pivotal role in the interatomic force matrix (IFM). A subsequent model analysis shows that external strain can reverse the polarity of the EPC Berry curvature in (quasi)-degenerate electronic subsystems through band inversion, thereby directly leading to phonon softening. The general theory is then applied to the BiOCl monolayer as a benchmark, which offers an accurate description of the density functional theory (DFT) calculations. This mechanism is further observed across a broad range of materials through ab initio calculations, providing an insightful perspective on EPC quantum geometry in lattice dynamics and FE phase transitions.
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Submitted 6 February, 2025; v1 submitted 3 February, 2025;
originally announced February 2025.
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Spin-polarized STM measurement scheme for quantum geometric tensor
Authors:
Shu-Hui Zhang,
Jin Yang,
Ding-Fu Shao,
Jia-Ji Zhu,
Wen-Long You,
Wen Yang,
Kai Chang
Abstract:
Quantum geometric tensor (QGT) reflects the geometry of the eigenstates of a system's Hamiltonian. The full characterization of QGT is essential for various quantum systems. However, it is challenging to characterize the QGT of the solid-state systems. Here we present a scheme by using spin-polarized STM to measure QGT of two-dimensional solid-state systems, in which the spin texture is extracted…
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Quantum geometric tensor (QGT) reflects the geometry of the eigenstates of a system's Hamiltonian. The full characterization of QGT is essential for various quantum systems. However, it is challenging to characterize the QGT of the solid-state systems. Here we present a scheme by using spin-polarized STM to measure QGT of two-dimensional solid-state systems, in which the spin texture is extracted from geometric amplitudes of Friedel oscillations induced by the intentionally introduced magnetic impurity and then the QGT is derived from the momentum differential of spin texture. The surface states of topological insulator (TISS), as a model spin system, is promising to demonstrate the scheme. In a TI slab, the gapped TISS host finite quantum metric and Berry curvature as the symmetric real part and the antisymmetric imaginary part of QGT, respectively. Thus, a detailed calculations guide the use of the developed scheme to measure the QGT of gapped TISS with or without an external in-plane magnetic field. This study provides a feasible scheme for measuring QGT of two-dimensional solid-state systems, and hints at the great potential of the information extraction from the geometric amplitudes of STM and other measurement.
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Submitted 23 January, 2025;
originally announced January 2025.
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Stretching the Printability Metric in Direct-ink Writing with Highly Extensible Yield-Stress Fluids
Authors:
Chaimongkol Saengow,
Samya Sen,
Joaquin Yus,
Eliza E. Lovrich,
Amanda G. Hoika,
Kelly M. Chang,
Arielle A. Pfeil,
Nellie Haug,
Amy J. Wagoner Johnson,
Randy H. Ewoldt
Abstract:
Direct-ink writing leverages the rheological complexity of yield-stress fluids to construct complex geometries, particularly those with large gaps across internal structures. However, extensional rheological properties have rarely been considered in work that studies rheology-printability correlations. Here, we test our hypothesis that extensional properties correlate with drawability, a key indic…
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Direct-ink writing leverages the rheological complexity of yield-stress fluids to construct complex geometries, particularly those with large gaps across internal structures. However, extensional rheological properties have rarely been considered in work that studies rheology-printability correlations. Here, we test our hypothesis that extensional properties correlate with drawability, a key indicator of printability that signifies speed robustness, printing resolution, and gap-spanning performance. We formulated cementitious suspensions using hydroxyapatite (HAp) particles, independently tuning them for yield stress and extensibility, two crucial rheological properties, and test-printed. To enhance extensibility, we incorporated hydroxypropyl methylcellulose as a polymeric modifier, but this enhancement may decrease as yield stress increases, presenting a challenge in materials design. We modulated particle interactions to achieve a wide range of yield stress and extensibility, allowing for rigorous testing of our hypothesis. This approach created inks with high extensibility and high yield stress, generally considered mutually exclusive properties. We evaluated correlations between drawability and key rheological properties, finding the strongest positive correlation with extensional failure strains (strain-to-break) rather than yield stress. We establish a bijective property-manufacturing relationship (one-on-one mapping of shear yield stress to buildability and extensional strain-to-break to drawability) by combining our findings on drawability with previous studies on buildability. This relationship provides a comprehensive framework for designing high-performance inks that can be self-supporting, capable of high-speed printing, and allow gap-spanning features.
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Submitted 21 January, 2025;
originally announced January 2025.
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Tilted chiral spin textures in confined nanostructures with in-plane magnetic anisotropy
Authors:
Wenlei Fu,
Haiming Dong,
Kai Chang
Abstract:
We demonstrate that nanoconfinement effects and in-plane magnetic anisotropy (IMA) can lead to tilted chiral spin textures in magnetic nanostructures, based on the analysis and simulation of theoretical models of micromagnetism. The tilted skyrmions are induced in confined nanoscale magnets with IMA under perpendicular magnetic fields. The chiral magnetic structures depend significantly on the siz…
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We demonstrate that nanoconfinement effects and in-plane magnetic anisotropy (IMA) can lead to tilted chiral spin textures in magnetic nanostructures, based on the analysis and simulation of theoretical models of micromagnetism. The tilted skyrmions are induced in confined nanoscale magnets with IMA under perpendicular magnetic fields. The chiral magnetic structures depend significantly on the size of the nanostructures. A controlled string of periodic skyrmion states emerges within the central magnetic domain wall, which can be tuned by the steady magnetic fields and the size of the nanostructures. Non-trivial topological states with non-integer topological charges are achieved by tuning the magnetic fields or the sizes of the nanostructures. Importantly, the periodic switching between the trivial and the non-trivial topological configurations is realized using an alternating magnetic field. Our study reveals an important mechanism for controlling novel skyrmion states via nanoconfinement effects and the IMA in magnetic nanostructures, and also provides a new approach for the development of magnetic field-modulated spin nanodevices.
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Submitted 7 January, 2025;
originally announced January 2025.
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Second Harmonic Generation in Topological Insulators under Quantizing Magnetic Fields
Authors:
Kainan Chang,
Muhammad Zubair,
Jin Luo Cheng,
Wang-Kong Tse
Abstract:
We theoretically investigate the second harmonic generation (SHG) of topological insulator surface states in a perpendicular magnetic field. Our theory is based on the microscopic expression of the second-order magneto-optical conductivity developed from the density matrix formalism, taking into account hexagonal warping effects on the surface states' band structure. Using numerically exact Landau…
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We theoretically investigate the second harmonic generation (SHG) of topological insulator surface states in a perpendicular magnetic field. Our theory is based on the microscopic expression of the second-order magneto-optical conductivity developed from the density matrix formalism, taking into account hexagonal warping effects on the surface states' band structure. Using numerically exact Landau level energies and wavefunctions including hexagonal warping, we calculate the spectrum of SHG conductivities under normal incidence for different values of magnetic field and chemical potential. The imaginary parts of the SHG conductivities show prominent resonant peaks corresponding to one-photon and two-photon inter-Landau level transitions. Treating the hexagonal warping term perturbatively, these transitions are clarified analytically within a perturbation theory from which approximate selection rules for the allowable optical transitions for SHG are determined. Our results show extremely high SHG susceptibility that is easily tunable by magnetic field and doping level for topological surface states in the far-infrared regime, exceeding that of many conventional nonlinear materials. This work highlights the key role of hexagonal warping effects in generating second-order optical responses and provides new insights on the nonlinear magneto-optical properties of the topological insulators.
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Submitted 26 November, 2024;
originally announced November 2024.
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Semiconductive and Ferromagnetic Lanthanide MXenes Derived from Carbon Intercalated Two-dimensional Halides
Authors:
Qian Fang,
Liming Wang,
Kai Chang,
Hongxin Yang,
Pu Yan,
Kecheng Cao,
Mian Li,
Zhifang Chai,
Qing Huang
Abstract:
Two-dimensional (2D) magnetic semiconductors are a key focus in developing next-generation information storage technologies. MXenes, as emerging 2D early transition metal carbides and nitrides, offer versatile compositions and tunable chemical structures. Incorporating lanthanide metals, with their unique role of 4f-electrons in engineering physical properties, into MXenes holds potential for adva…
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Two-dimensional (2D) magnetic semiconductors are a key focus in developing next-generation information storage technologies. MXenes, as emerging 2D early transition metal carbides and nitrides, offer versatile compositions and tunable chemical structures. Incorporating lanthanide metals, with their unique role of 4f-electrons in engineering physical properties, into MXenes holds potential for advancing technological applications. However, the scarcity of lanthanide-containing ternary MAX phase precursors and the propensity of lanthanides to oxidize pose significant challenges to obtain lanthanide MXenes (Ln2CT2) via the top-down etching method. Here, we propose a general bottom-up methodology for lanthanide MXenes, that derive from carbon intercalated van der Waals building blocks of 2D halides. Compared to conventional MXenes conductors, the synthesized Ln2CT2 exhibit tunable band gaps spanning 0.32 eV to 1.22 eV that cover typical semiconductors such as Si (1.12 eV) and Ge (0.67 eV). Additionally, the presence of unpaired f-electrons endows Ln2CT2 with intrinsic ferromagnetism, with Curie temperatures ranging between 36 K and 60 K. Theoretical calculations reveal that, in contrast to traditional MXenes, the number of d-electrons states around the Fermi level are largely diminishes in bare Ln2C MXenes, and the halogen terminals can further exhaust these electrons to open band gaps. Meanwhile, the Ln-4f electrons in Ln2CT2 are highly localized and stay away from the Fermi level, contributing to the spin splitting for the observed ferromagnetic behavior. Lanthanide MXenes hold immense promise for revolutionizing future applications in spintronic devices.
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Submitted 23 October, 2024;
originally announced October 2024.
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Intercalation of Functional Materials with Phase Transitions for Neuromorphic Applications
Authors:
Xin He,
Hua Wang,
Jian Sun,
Xixiang Zhang,
Kai Chang,
Fei Xue
Abstract:
Introducing foreign ions, atoms, or molecules into emerging functional materials is crucial for manipulating material physical properties and innovating device applications. The intercalation of emerging new materials can induce multiple intrinsic changes, such as charge doping, chemical bonding, and lattice expansion, which facilitates the exploration of structural phase transformations, the tuni…
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Introducing foreign ions, atoms, or molecules into emerging functional materials is crucial for manipulating material physical properties and innovating device applications. The intercalation of emerging new materials can induce multiple intrinsic changes, such as charge doping, chemical bonding, and lattice expansion, which facilitates the exploration of structural phase transformations, the tuning of symmetry-breaking-related physics, and the creation of brain-inspired advanced devices. Moreover, incorporating various hosts and intercalants enables a series of crystal structures with a rich spectrum of characteristics, greatly expanding the scope and fundamental understanding of existing materials. Herein, we summarize the methods typically used for the intercalation of functional materials. We highlight recent progress in intercalation-based phase transitions and their emerging physics, i.e., ferroelectric, magnetic, insulator-metal, superconducting, and charge-density-wave phase transitions. We discuss prospective device applications for intercalation-based phase transitions, i.e., neuromorphic devices. Finally, we provide potential future research lines for promoting its further development.
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Submitted 14 October, 2024;
originally announced October 2024.
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Optical Manifestations of Quantum Geometry in Electron-Phonon Coupling
Authors:
Jiaming Hu,
Wenbin Li,
Zhichao Guo,
Hua Wang,
Kai Chang
Abstract:
Quantum geometry is crucial for understanding intricate condensed matter systems, governing transport phenomena and optical responses. However, traditional studies predominantly consider a static crystal lattice, focusing exclusively on the pure-electronic quantum geometry of the Hilbert space parameterized by electronic wave vectors, thereby overlooking the dynamic effects arising from phonons an…
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Quantum geometry is crucial for understanding intricate condensed matter systems, governing transport phenomena and optical responses. However, traditional studies predominantly consider a static crystal lattice, focusing exclusively on the pure-electronic quantum geometry of the Hilbert space parameterized by electronic wave vectors, thereby overlooking the dynamic effects arising from phonons and their coupling with electrons. In this work, we reveal the intrinsic quantum geometry of the electron-phonon coupling (EPC), which resides in the hybrid Hilbert space parameterized by both the electronic wave vectors and phonon displacements. The EPC quantum metric, EPC Berry curvature and EPC shift vector, as central elements, quantify the EPC-induced velocity, polarization, and anomalous charge-center shift, respectively. We further connect this geometry to phonon-mediated optical responses, particularly in-gap resonances, enabling experimental detection and characterization of EPC quantum geometry.
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Submitted 26 May, 2025; v1 submitted 12 October, 2024;
originally announced October 2024.
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Ultrafast manipulations of nanoscale skyrmioniums
Authors:
Haiming Dong,
Panpan Fu,
Yifeng Duan,
Kai Chang
Abstract:
The advancement of next-generation magnetic devices depends on fast manipulating magnetic microstructures on the nanoscale. A universal method is presented for rapidly and reliably generating, controlling, and driving nano-scale skyrmioniums, through high-throughput micromagnetic simulations. Ultrafast switches are realized between skyrmionium and skyrmion states and rapidly change their polaritie…
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The advancement of next-generation magnetic devices depends on fast manipulating magnetic microstructures on the nanoscale. A universal method is presented for rapidly and reliably generating, controlling, and driving nano-scale skyrmioniums, through high-throughput micromagnetic simulations. Ultrafast switches are realized between skyrmionium and skyrmion states and rapidly change their polarities in monolayer magnetic nanodiscs by perpendicular magnetic fields. The transition mechanism by alternating magnetic fields differs from that under steady magnetic fields. New skyrmionic textures, such as flower-like and windmill-like skyrmions, are discovered. Moreover, this nanoscale skyrmionium can move rapidly and stably in nanoribbons using weaker spin-polarized currents. Explicit discussions are held regarding the physical mechanisms involved in ultrafast manipulations of skyrmioniums. This work provides further physical insight into the manipulation and applications of topological skyrmionic structures for developing low-power consumption and nanostorage devices.
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Submitted 1 September, 2024;
originally announced September 2024.
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Circularly polarised electroluminescence from chiral excitons in vacuum-sublimed supramolecular semiconductor thin films
Authors:
Rituparno Chowdhury,
Marco D. Preuss,
Hwan-Hee Cho,
Joshua J. P. Thompson,
Samarpita Sen,
Tomi Baikie,
Pratyush Ghosh,
Yorrick Boeije,
Xian-Wei Chua,
Kai-Wei Chang,
Erjuan Guo,
Joost van der Tol,
Bart W. L. van den Bersselaar,
Andrea Taddeucci,
Nicolas Daub,
Daphne M. Dekker,
Scott T. Keene,
Ghislaine Vantomme,
Bruno Ehrler,
Stefan C. J. Meskers,
Akshay Rao,
Bartomeu Monserrat,
E. W. Meijer,
Richard H. Friend
Abstract:
Materials with chiral electronic structures are of great interest. We report a triazatruxene, TAT, molecular semiconductor with chiral alkyl side chains that crystallises from solution to form chirally-stacked columns with a helical pitch of 6 TATs (2.3 nm). These crystals show strong circularly polarised, CP, green photoluminescence, with dissymmetry of 24%. Electronic structure calculations usin…
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Materials with chiral electronic structures are of great interest. We report a triazatruxene, TAT, molecular semiconductor with chiral alkyl side chains that crystallises from solution to form chirally-stacked columns with a helical pitch of 6 TATs (2.3 nm). These crystals show strong circularly polarised, CP, green photoluminescence, with dissymmetry of 24%. Electronic structure calculations using the full crystal structure, show that this chiral stacking associates angular momentum to the valence and conduction states and thus gives rise to the observed CP luminescence. Free-standing crystals are not useful for active semiconductor devices, but we have discovered that co-sublimation of TAT as the guest in a structurally mismatched host enables the fabrication of thin films where the chiral crystallization is achieved in-situ by thermally-triggered nano-phase segregation of dopant and host whilst preserving the integrity of the film. This enables fabrication of bright (green) organic light-emitting diodes with unexpectedly high external quantum efficiencies of up to 16% and electroluminescence dissymmetries above 10%. These materials and this process method offer significant application potential in spintronics, optical displays and multidimensional optoelectronics.
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Submitted 25 August, 2024;
originally announced August 2024.
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Geodesic nature and quantization of shift vector
Authors:
Hua Wang,
Kai Chang
Abstract:
We present the geodesic nature and quantization of geometric shift vector in quantum systems, with the parameter space defined by the Bloch momentum, using the Wilson loop approach. Our analysis extends to include bosonic phonon drag shift vectors with non-vertical transitions. We demonstrate that the gauge invariant shift vector can be quantized as integer values, analogous to the Euler character…
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We present the geodesic nature and quantization of geometric shift vector in quantum systems, with the parameter space defined by the Bloch momentum, using the Wilson loop approach. Our analysis extends to include bosonic phonon drag shift vectors with non-vertical transitions. We demonstrate that the gauge invariant shift vector can be quantized as integer values, analogous to the Euler characteristic based on the Gauss-Bonnet theorem for a manifold with a smooth boundary. We reveal intricate relationships among geometric quantities such as the shift vector, Berry curvature, and quantum metric. Our findings demonstrate that the loop integral of the shift vector in the quantized interband formula contributes to the non-quantized component of the trace of conductivity in the circular photogalvanic effect. The Wilson loop method facilitates first-principles calculations, providing insights in the geometric underpinnings of these interband gauge invariant quantities and shedding light on their nonlinear optical manifestations in real materials.
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Submitted 17 June, 2024; v1 submitted 22 May, 2024;
originally announced May 2024.
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Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces
Authors:
Xu Zhang,
Tongshuai Zhu,
Shuai Zhang,
Zhongqiang Chen,
Anke Song,
Chong Zhang,
Rongzheng Gao,
Wei Niu,
Yequan Chen,
Fucong Fei,
Yilin Tai,
Guoan Li,
Binghui Ge,
Wenkai Lou,
Jie Shen,
Haijun Zhang,
Kai Chang,
Fengqi Song,
Rong Zhang,
Xuefeng Wang
Abstract:
Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and e…
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Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices.
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Submitted 7 March, 2024;
originally announced March 2024.
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Data-driven compression of electron-phonon interactions
Authors:
Yao Luo,
Dhruv Desai,
Benjamin K. Chang,
Jinsoo Park,
Marco Bernardi
Abstract:
First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon (e-ph) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e-ph interactions, existing interpolation techniques lev…
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First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon (e-ph) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e-ph interactions, existing interpolation techniques leverage locality in real space, but the high dimensionality of the data remains a bottleneck to balance cost and accuracy. Here we show an efficient way to compress e-ph interactions based on singular value decomposition (SVD), a widely used matrix / image compression technique. Leveraging (un)constrained SVD methods, we accurately predict material properties related to e-ph interactions - including charge mobility, spin relaxation times, band renormalization, and superconducting critical temperature - while using only a small fraction (1-2%) of the interaction data. These findings unveil the hidden low-dimensional nature of e-ph interactions. Furthermore, they accelerate state-of-the-art first-principles e-ph calculations by about two orders of magnitudes without sacrificing accuracy. Our Pareto-optimal parametrization of e-ph interactions can be readily generalized to electron-electron and electron-defect interactions, as well as to other couplings, advancing quantitative studies of condensed matter.
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Submitted 31 March, 2024; v1 submitted 20 January, 2024;
originally announced January 2024.
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First-Principles Electron-Phonon Interactions and Polarons in the Parent Cuprate La$_2$CuO$_4$
Authors:
Benjamin K. Chang,
Iurii Timrov,
Jinsoo Park,
Jin-Jian Zhou,
Nicola Marzari,
Marco Bernardi
Abstract:
Understanding electronic interactions in high-temperature superconductors is an outstanding challenge. In the widely studied cuprate materials, experimental evidence points to strong electron-phonon ($e$-ph) coupling and broad photoemission spectra. Yet, the microscopic origin of this behavior is not fully understood. Here we study $e$-ph interactions and polarons in a prototypical parent (undoped…
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Understanding electronic interactions in high-temperature superconductors is an outstanding challenge. In the widely studied cuprate materials, experimental evidence points to strong electron-phonon ($e$-ph) coupling and broad photoemission spectra. Yet, the microscopic origin of this behavior is not fully understood. Here we study $e$-ph interactions and polarons in a prototypical parent (undoped) cuprate, La$_2$CuO$_4$ (LCO), by means of first-principles calculations. Leveraging parameter-free Hubbard-corrected density functional theory, we obtain a ground state with band gap and Cu magnetic moment in nearly exact agreement with experiments. This enables a quantitative characterization of $e$-ph interactions. Our calculations reveal two classes of longitudinal optical (LO) phonons with strong $e$-ph coupling to hole states. These modes consist of Cu-O plane bond-stretching and bond-bending as well as vibrations of apical O atoms. The hole spectral functions, obtained with a cumulant method that can capture strong $e$-ph coupling, exhibit broad quasiparticle peaks with a small spectral weight ($Z\approx0.25$) and pronounced LO-phonon sidebands characteristic of polaron effects. Our calculations predict features observed in photoemission spectra, including a 40-meV peak in the $e$-ph coupling distribution function not explained by existing models. These results show that the universal strong $e$-ph coupling found experimentally in lanthanum cuprates is an intrinsic feature of the parent compound, and elucidates its microscopic origin.
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Submitted 20 January, 2024;
originally announced January 2024.
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One-dimensional Multiferroic Semiconductor WOI3: Unconventional Anisotropic d^1 Rule and Bulk Photovoltaic Effect
Authors:
Zhihao Gong,
Yechen Xun,
Zhuang Qian,
Kai Chang,
Jingshan Qi,
Hua Wang
Abstract:
The pursuit of multiferroic magnetoelectrics, combining simultaneous ferroelectric and magnetic orders, remains a central focus in condensed matter physics. Here we report the centrosymmetric, one-dimensional (1D) antiferromagnetic WOI$_3$ undergoes a strain-induced ferroelectric distortion. The paraelectric-ferroelectric transition is originated from the unconventional anisotropic $d^1$ mechanism…
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The pursuit of multiferroic magnetoelectrics, combining simultaneous ferroelectric and magnetic orders, remains a central focus in condensed matter physics. Here we report the centrosymmetric, one-dimensional (1D) antiferromagnetic WOI$_3$ undergoes a strain-induced ferroelectric distortion. The paraelectric-ferroelectric transition is originated from the unconventional anisotropic $d^1$ mechanism, where an unpaired d electron of each W$^{5+}$ ion contributes to magnetic orders. Employing a Heisenberg model with Dzyaloshinskii-Moriya interaction, we predict an antiferromagnetic spin configuration as the paraelectric ground state, transitioning to a ferroelectric phase with noncollinear spin arrangement under uniaxial strain. The ferroelectric polarization and noncollinear spin arrangement can be manipulated by varying the applied strain. While the energy barriers for switching ferroelectric polarizations with magnetic orders are on the order of a few dozen of meV, the shift current bulk photovoltaic effect (BPVE) exhibits remarkable differences, providing a precise and valuable tool for experimentally probing the interplay of ferroelectric and magnetic orders in 1D WOI$_3$.
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Submitted 13 March, 2024; v1 submitted 7 January, 2024;
originally announced January 2024.
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Strain effects in twisted spiral antimonene
Authors:
Ding-Ming Huang,
Xu Wu,
Kai Chang,
Hao Hu,
Ye-Liang Wang,
H. Q. Xu,
Jian-Jun Zhang
Abstract:
van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation in their physical properties can be deduced from a tiny change in inter-layer spacing, twist angle, or in-plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain eff…
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van der Waals (vdW) layered materials exhibit fruitful novel physical properties. The energy band of such materials depends strongly on their structures and a tremendous variation in their physical properties can be deduced from a tiny change in inter-layer spacing, twist angle, or in-plane strain. In this work, a kind of vdW layered material of spiral antimonene is constructed, and the strain effects in the material are studied. The spiral antimonene is grown on a germanium (Ge) substrate and is induced by a helical dislocation penetrating through few-atomic-layers of antimonene (\b{eta}-phase). The as-grown spiral is intrinsically strained and the lattice distortion is found to be pinned around the dislocation. Both spontaneous inter-layer twist and in-plane anisotropic strain are observed in scanning tunneling microscope (STM) measurements. The strain in the spiral antimonene can be significantly modified by STM tip interaction, leading to a variation in the surface electronic density of states (DOS) and a large modification in the work function of up to a few hundreds of milli-electron-volts (meV). Those strain effects are expected to have potential applications in building up novel piezoelectric devices.
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Submitted 26 October, 2023;
originally announced October 2023.
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Topological phase transition in a narrow bandgap semiconductor nanolayer
Authors:
Zhi-Hai Liu,
Wenkai Lou,
Kai Chang,
H. Q. Xu
Abstract:
Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development toward…
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Narrow bandgap semiconductor nanostructures have been explored for realization of topological superconducting quantum devices in which Majorana states can be created and employed for constructing topological qubits. However, a prerequisite to achieve the topological phase transition in these nanostructures is application of a magnetic field, which could complicate the technology development towards topological quantum computing. Here we demonstrate that a topological phase transition can be achieved in a narrow bandgap semiconductor nanolayer under application of a perpendicular electric field. Based on full band structure calculations, it is shown that the topological phase transition occurs at an electric-field induced band inversion and is accompanied by a sharp change of the $\mathbb{Z}_{2}$ invariant at the critical field. We also demonstrate that the nontrivial topological phase is manifested by the quantum spin Hall edge states in a band-inverted nanolayer Hall-bar structure. We present the phase diagram of the nanolayer in the space of layer thickness and electric field strength, and discuss the optimal conditions to achieve a large topological bandgap in the electric-field induced topological phase of a semiconductor nanolayer.
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Submitted 26 October, 2023;
originally announced October 2023.
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Electronic Structure Modulation from Configuring Anatase TiO2 into a Bicontinuous Mesostructure
Authors:
Ying-Hao Lu,
Bor Kae Chang,
Yi-Fan Chen
Abstract:
Configuring TiO2 into bicontinuous mesostructures greatly improves its photocatalytic efficiency. This is often ascribed to the expanded surface area. Yet, whether mesostructuring modulates TiO2's electronic structure and how that contributes to the improvement are rarely discussed. Here, we employed spectroscopic and density functional theory approaches to address the question. It is found that t…
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Configuring TiO2 into bicontinuous mesostructures greatly improves its photocatalytic efficiency. This is often ascribed to the expanded surface area. Yet, whether mesostructuring modulates TiO2's electronic structure and how that contributes to the improvement are rarely discussed. Here, we employed spectroscopic and density functional theory approaches to address the question. It is found that the improved efficacy could arise from an expansion in surface area and elevation in density of states, both of which might collectively lead to the observed reduction in charge-carrier recombination.
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Submitted 20 October, 2023;
originally announced October 2023.
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Ferroelastic twin wall mediated ferro-flexoelectricity and bulk photovoltaic effect in SrTiO$_3$
Authors:
Ri He,
Haowei Xu,
Peijun Yang,
Kai Chang,
Hua Wang,
Zhicheng Zhong
Abstract:
Ferroelastic twin walls in nonpolar materials can give rise to a spontaneous polarization due to symmetry breaking. Nevertheless, the bi-stable polarity of twin walls and its reversal have not yet been demonstrated. Here, we report that the polarity of SrTiO$_3$ twin walls can be switched by ultra-low strain gradient. Using first-principles-based machine-learning potential, we demonstrate that the…
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Ferroelastic twin walls in nonpolar materials can give rise to a spontaneous polarization due to symmetry breaking. Nevertheless, the bi-stable polarity of twin walls and its reversal have not yet been demonstrated. Here, we report that the polarity of SrTiO$_3$ twin walls can be switched by ultra-low strain gradient. Using first-principles-based machine-learning potential, we demonstrate that the twin walls can be deterministically rotated and realigned in specific directions under strain gradient, which breaks the inversion symmetry of a sequence of walls and leads to a macroscopic polarization. The system can maintain polarity even after the strain gradient is removed. As a result, the polarization of twin walls can exhibit ferroelectric-like hysteresis loop upon cyclic bending, namely ferro-flexoelectricity. Finally, we propose a scheme to experimentally detect the polarity of twin wall by measuring the bulk photovoltaic responses. Our findings suggest a twin-wall-mediated ferro-flexoelectricity in SrTiO$_3$, which could be potentially exploited as functional elements in nano-electronic devices design.
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Submitted 16 October, 2023;
originally announced October 2023.
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Geometric density of states of electronic structures for local responses: Phase information from the amplitudes of STM measurement
Authors:
Shu-Hui Zhang,
Jin Yang,
Ding-Fu Shao,
Jia-Ji Zhu,
Wen Yang,
Kai Chang
Abstract:
Electronic band structures underlie the physical properties of crystalline materials, their geometrical exploration renovates the conventional cognition and brings about novel applications. Inspired by geometry phases, we introduce a geometric amplitude named as the geometric density of states (GDOS) dictated by the differential curvature of the constant-energy contour. The GDOS determines the amp…
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Electronic band structures underlie the physical properties of crystalline materials, their geometrical exploration renovates the conventional cognition and brings about novel applications. Inspired by geometry phases, we introduce a geometric amplitude named as the geometric density of states (GDOS) dictated by the differential curvature of the constant-energy contour. The GDOS determines the amplitude of the real-space Green's function making it attain the ultimate expression with transparent physics. The local responses of crystalline materials are usually formulated by the real-space Green's function, so the relevant physics should be refreshed by GDOS. As an example of local responses, we suggest using scanning tunneling microscopy (STM) to characterize the surface states of three-dimensional topological insulator under an in-plane magnetic field. The GDOS favors the straightforward simulation of STM measurement without resorting to Fourier transform of the real-space measurement, and also excavates the unexplored potential of STM measurement to extract the phase information of wavefunction through its amplitude, i.e., the spin and curvature textures. Therefore, the proposed GDOS deepens the understanding of electronic band structures and is indispensable in local responses, and it should be universal for any periodic systems.
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Submitted 25 September, 2023;
originally announced September 2023.
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Giant Apparent Flexoelectricity in Semiconductors Driven by Insulator-to-metal Transition
Authors:
Ya-Xun Wang,
Jian-Gao Li,
Gotthard Seifert,
Kai Chang,
Dong-Bo Zhang
Abstract:
We elucidate the flexoelectricity of materials in the high strain gradient regime, of which the underlying mechanism is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high strain gradient-induced insulator-to-metal transition. We show that an unusual type-II band alignment is formed between the compress…
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We elucidate the flexoelectricity of materials in the high strain gradient regime, of which the underlying mechanism is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high strain gradient-induced insulator-to-metal transition. We show that an unusual type-II band alignment is formed between the compressed and elongated sides of the bent film, resulting in a spatial separation of electron and hole. Therefore, upon the insulator-to-metal transition, electrons transfer from the compressed side to the elongated side to reach the thermodynamic equilibrium, leading to pronounced polarization along the film thickness dimension. The obtained transverse flexoelectric coefficients are unexpectedly high, with a quadratic dependence on the film thickness. This new mechanism is extendable to other semiconductor materials with moderate energy gaps. Our findings have important implications for the future applications of flexoelectricity in semiconductor materials.
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Submitted 7 September, 2023;
originally announced September 2023.
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Gate voltage induced injection and shift currents in AA- and AB-stacked bilayer graphene
Authors:
Ze Zheng,
Kainan Chang,
Jin Luo Cheng
Abstract:
Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for developing passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric two-dimensional materials, AA- and AB-stacked bilayer graphene, by applying an external gate voltage to break the symmetry. Using a tight-binding model to describe t…
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Generating photogalvanic effects in centrosymmetric materials can provide new opportunities for developing passive photodetectors and energy harvesting devices. In this work, we investigate the photogalvanic effects in centrosymmetric two-dimensional materials, AA- and AB-stacked bilayer graphene, by applying an external gate voltage to break the symmetry. Using a tight-binding model to describe the electronic states, the injection coefficients for circular photogalvanic effects and shift conductivities for linear photogalvanic effects are calculated for both materials with light wavelengths ranging from THz to visible. We find that gate voltage induced photogalvanic effects can be very significant for AB-stacked bilayer graphene, with generating a maximal dc current in the order of mA for a 1 $μ$m wide sample illuminated by a light intensity of 0.1 GW/cm$^2$, which is determined by the optical transition around the band gap and van Hove singularity points. Although such effects in AA-stacked bilayer graphene are about two orders of magnitude smaller than those in AB-stacked bilayer graphene, the spectrum is interestingly limited in a very narrow photon energy window, which is associated with the interlayer coupling strength. A detailed analysis of the light polarization dependence is also performed. The gate voltage and chemical potential can be used to effectively control the photogalvanic effects.
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Submitted 11 July, 2023;
originally announced July 2023.
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Self-supervised Representations and Node Embedding Graph Neural Networks for Accurate and Multi-scale Analysis of Materials
Authors:
Jian-Gang Kong,
Ke-Lin Zhao,
Jian Li,
Qing-Xu Li,
Yu Liu,
Rui Zhang,
Jia-Ji Zhu,
Kai Chang
Abstract:
Supervised machine learning algorithms, such as graph neural networks (GNN), have successfully predicted material properties. However, the superior performance of GNN usually relies on end-to-end learning on large material datasets, which may lose the physical insight of multi-scale information about materials. And the process of labeling data consumes many resources and inevitably introduces erro…
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Supervised machine learning algorithms, such as graph neural networks (GNN), have successfully predicted material properties. However, the superior performance of GNN usually relies on end-to-end learning on large material datasets, which may lose the physical insight of multi-scale information about materials. And the process of labeling data consumes many resources and inevitably introduces errors, which constrains the accuracy of prediction. We propose to train the GNN model by self-supervised learning on the node and edge information of the crystal graph. Compared with the popular manually constructed material descriptors, the self-supervised atomic representation can reach better prediction performance on material properties. Furthermore, it may provide physical insights by tuning the range information. Applying the self-supervised atomic representation on the magnetic moment datasets, we show how they can extract rules and information from the magnetic materials. To incorporate rich physical information into the GNN model, we develop the node embedding graph neural networks (NEGNN) framework and show significant improvements in the prediction performance. The self-supervised material representation and the NEGNN framework may investigate in-depth information from materials and can be applied to small datasets with increased prediction accuracy.
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Submitted 5 June, 2024; v1 submitted 19 October, 2022;
originally announced November 2022.
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Theory of Optical Activity in Doped Systems with Application to Twisted Bilayer Graphene
Authors:
K. Chang,
Z. Zheng,
J. E. Sipe,
J. L. Cheng
Abstract:
We theoretically study the optical activity in a doped system and derive the optical activity tensor from a light wavevector-dependent linear optical conductivity. Although the light-matter interaction is introduced through the velocity gauge from a minimal coupling Hamiltonian, we find that the well-known ``false divergences'' problem can be avoided in practice if the electronic states are descri…
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We theoretically study the optical activity in a doped system and derive the optical activity tensor from a light wavevector-dependent linear optical conductivity. Although the light-matter interaction is introduced through the velocity gauge from a minimal coupling Hamiltonian, we find that the well-known ``false divergences'' problem can be avoided in practice if the electronic states are described by a finite band effective Hamiltonian, such as a few-band tight-binding model. The expression we obtain for the optical activity tensor is in good numerical agreement with a recent theory derived for an undoped topologically trivial gapped system. We apply our theory to the optical activity of a gated twisted bilayer graphene, with a detailed discussion of the dependence of the results on twist angle, chemical potential, gate voltage, and location of rotation center forming the twisted bilayer graphene.
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Submitted 8 October, 2022;
originally announced October 2022.
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Temperature-Induced Magnonic Chern Insulator in Collinear Antiferromagnets
Authors:
Yun-Mei Li,
Xi-Wang Luo,
Kai Chang
Abstract:
Thermal fluctuation in magnets will bring temperature-dependent self-energy corrections to the magnons, however, their effects on the topological orders of magnons is not well explored. Here we demonstrate that such corrections can induce a Chern insulating phase in two-dimensional collinear antiferromagnets with sublattice asymmetries by increasing temperature. We present the phase diagram of the…
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Thermal fluctuation in magnets will bring temperature-dependent self-energy corrections to the magnons, however, their effects on the topological orders of magnons is not well explored. Here we demonstrate that such corrections can induce a Chern insulating phase in two-dimensional collinear antiferromagnets with sublattice asymmetries by increasing temperature. We present the phase diagram of the system and show that the trivial magnon bands at zero temperature exhibit Chern insulating phase above a critical temperature before the paramagnetic phase transition. The self-energy corrections close and reopen the bandgap at Γ or K points, accompanied by a magnon chirality switch and nontrivial Berry curvature transition. The thermal Hall effect of magnons or detecting the magnon polarization can give experimentally prominent signatures of topological transitions. We include the numerical results based on van der Waals magnet MnPS3, calling for experimental implementation. Our work presents a new paradigm for constructing topological phase that is beyond the linear spin wave theory.
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Submitted 4 February, 2023; v1 submitted 21 September, 2022;
originally announced September 2022.
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Selectively controlled ferromagnets by electric fields in van der Waals ferromagnetic heterojunctions
Authors:
Zi-Ao Wang,
Weishan Xue,
Faguang Yan,
Wenkai Zhu,
Yi Liu,
Xinhui Zhang,
Zhongming Wei,
Kai Chang,
Zhe Yuan,
Kaiyou Wang
Abstract:
Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface formed. Here, we report electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be…
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Charge transfer plays a key role at the interfaces of heterostructures, which can affect electronic structures and ultimately the physical properties of the materials. However, charge transfer is difficult to manipulate externally once the interface formed. Here, we report electrically tunable charge transfer in Fe3GeTe2/Cr2Ge2Te6/Fe3GeTe2 all-magnetic van der Waals heterostructures, which can be exploited to selectively modify the magnetic properties of the top or bottom Fe3GeTe2 electrodes. The directional charge transfer from metallic Fe3GeTe2 to semiconducting Cr2Ge2Te6 remarkably modifies magnetic anisotropy energy of Fe3GeTe2, leading to the dramatically suppressed coercivity. The electrically selective control of ferromagnets demonstrated in this study could stimulate the development of spintronic devices based on van der Waals magnets.
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Submitted 27 July, 2022;
originally announced July 2022.
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Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction
Authors:
Chong Liu,
Kai Chang,
Ke Zou
Abstract:
Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic…
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Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic theory, we find out the exact geometric transformation in this model that determines the positions of diffraction spots. The program can deal with many forms of surface structures, including surface reconstructions or domains. The simulations exhibit great agreement with the experimental results in various cases. This program will benefit the structure analysis in thin film growth and surface science studies.
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Submitted 24 August, 2022; v1 submitted 13 July, 2022;
originally announced July 2022.
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Comparison of the canonical transformation and energy functional formalisms for ab initio calculations of self-localized polarons
Authors:
Yao Luo,
Benjamin K. Chang,
Marco Bernardi
Abstract:
In materials with strong electron-phonon (e-ph) interactions, charge carriers can distort the surrounding lattice and become trapped, forming self-localized (small) polarons. We recently developed an ab initio approach based on canonical transformations to efficiently compute the formation and energetics of small polarons[1]. A different approach based on a Landau-Pekar energy functional has been…
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In materials with strong electron-phonon (e-ph) interactions, charge carriers can distort the surrounding lattice and become trapped, forming self-localized (small) polarons. We recently developed an ab initio approach based on canonical transformations to efficiently compute the formation and energetics of small polarons[1]. A different approach based on a Landau-Pekar energy functional has been proposed in the recent literature [2,3]. In this work, we analyze and compare these two methods in detail. We show that the small polaron energy is identical in the two formalisms when using the same polaron wave function. We also show that our canonical transformation formalism can predict polaron band structures and can properly treat zero- and finite-temperature lattice vibration effects, although at present using a fixed polaron wave function. Conversely, the energy functional approach can compute the polaron wave function, but as we show here it neglects lattice vibrations and cannot address polaron self-localization and thermal band narrowing. Taken together, this work relates two different methods developed recently to study polarons from first-principles, highlighting their merits and shortcomings and discussing them both in a unified formalism.
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Submitted 1 March, 2022;
originally announced March 2022.
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Higher-order Topological Phases of Magnons in van der Waals Honeycomb Ferromagnets
Authors:
Yun-Mei Li,
Ya-Jie Wu,
Xi-Wang Luo,
Yongwei Huang,
Kai Chang
Abstract:
We theoretically propose a second-order topological magnon insulator by stacking the van der Waals honeycomb ferromagnets with antiferromagnetic interlayer coupling. The system exhibits Z$_{2}$ topological phase, protected by pseudo-time-reversal symmetry (PTRS). An easy-plane anisotropy term breaks PTRS and destroys the topological phase. Nevertheless, it respects a magnetic two-fold rotational s…
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We theoretically propose a second-order topological magnon insulator by stacking the van der Waals honeycomb ferromagnets with antiferromagnetic interlayer coupling. The system exhibits Z$_{2}$ topological phase, protected by pseudo-time-reversal symmetry (PTRS). An easy-plane anisotropy term breaks PTRS and destroys the topological phase. Nevertheless, it respects a magnetic two-fold rotational symmetry which protects a second-order topological phase with corner modes in bilayer and hinge modes along stacking direction. Moreover, an introduced staggered interlayer coupling establishes a Z$_{2}$$\times$Z topology, giving rise to gapped topological surface modes carrying non-zero Chern numbers. Consequently, chiral hinge modes propagate along the horizontal hinges in a cuboid geometry and are robust against disorders. Our work bridges the higher-order topology and magnons in van der Waals platforms, and could be used for constructing topological magnonic devices.
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Submitted 16 February, 2022;
originally announced February 2022.
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Imaging of sub-$μ$A currents in bilayer graphene using a scanning diamond magnetometer
Authors:
M. L. Palm,
W. S. Huxter,
P. Welter,
S. Ernst,
P. J. Scheidegger,
S. Diesch,
K. Chang,
P. Rickhaus,
T. Taniguchi,
K. Wantanabe,
K. Ensslin,
C. L. Degen
Abstract:
Nanoscale electronic transport gives rise to a number of intriguing physical phenomena that are accompanied by distinct spatial patterns of current flow. Here, we report on sensitive magnetic imaging of two-dimensional current distributions in bilayer graphene at room temperature. By combining dynamical modulation of the source-drain current with ac quantum sensing of a nitrogen-vacancy center in…
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Nanoscale electronic transport gives rise to a number of intriguing physical phenomena that are accompanied by distinct spatial patterns of current flow. Here, we report on sensitive magnetic imaging of two-dimensional current distributions in bilayer graphene at room temperature. By combining dynamical modulation of the source-drain current with ac quantum sensing of a nitrogen-vacancy center in a diamond probe, we acquire magnetic field and current density maps with excellent sensitivities of 4.6 nT and 20 nA/$μ$m, respectively. The spatial resolution is 50-100 nm. We further introduce a set of methods for increasing the technique's dynamic range and for mitigating undesired back-action of magnetometry operation on the electronic transport. Current density maps reveal local variations in the flow pattern and global tuning of current flow via the back-gate potential. No signatures of hydrodynamic transport are observed. Our experiments demonstrate the feasibility for imaging subtle features of nanoscale transport in two-dimensional materials and conductors.
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Submitted 18 January, 2022;
originally announced January 2022.
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Picocavity-controlled Sub-nanometer Resolved Single Molecule Non-linear Fluorescence
Authors:
Siyuan Lyu,
Yuan Zhang,
Yao Zhang,
Kainan Chang,
Guangchao Zheng,
Luxia Wang
Abstract:
In this article, we address fluorescence of single molecule inside a plasmonic picocavity by proposing a semi-classical theory via combining the macroscopic quantum electrodynamics theory and the open quantum system theory. To gain insights into the experimental results [Nat. Photonics, 14, 693 (2020)], we have further equipped this theory with the classical electromagnetic simulation of the pico-…
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In this article, we address fluorescence of single molecule inside a plasmonic picocavity by proposing a semi-classical theory via combining the macroscopic quantum electrodynamics theory and the open quantum system theory. To gain insights into the experimental results [Nat. Photonics, 14, 693 (2020)], we have further equipped this theory with the classical electromagnetic simulation of the pico-cavity, formed by single atom decorated silver STM tip and a silver substrate, and the time-dependent density functional theory calculation of zinc phthalocyanine molecule. Our simulations not only reproduce the fluorescence spectrum as measured in the experiment, confirming the influence of extreme field confinement afforded by the picocavity, but also reveal Rabi oscillation dynamics and Mollow triplets spectrum for moderate laser excitation. Thus, our study highlights the possibility of coherently manipulating the molecular state and exploring non-linear optical phenomena with the plasmonic picocavity.
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Submitted 17 December, 2021;
originally announced December 2021.
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Quantum Hall phase in graphene engineered by interfacial charge coupling
Authors:
Yaning Wang,
Xiang Gao,
Kaining Yang,
Pingfan Gu,
Xin Lu,
Shihao Zhang,
Yuchen Gao,
Naijie Ren,
Baojuan Dong,
Yuhang Jiang,
Kenji Watanabe,
Takashi Taniguchi,
Jun Kang,
Wenkai Lou,
Jinhai Mao,
Jianpeng Liu,
Yu Ye,
Zheng Vitto Han,
Kai Chang,
Jing Zhang,
Zhidong Zhang
Abstract:
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this paradigm of interaction remain ch…
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Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted to exhibit exotic topological states. Yet the understanding of the underlying physics and the controllable engineering of this paradigm of interaction remain challenging. Here we demonstrate the observation of an unusual QHE, which differs markedly from the known picture, in graphene samples in contact with an anti-ferromagnetic insulator CrOCl equipped with dual gates. Owing to the peculiar interfacial coupling, Landau levels in monolayer graphene remain intact at negative filling fractions, but largely deviated for the positive gate-doping range. The latter QHE phase even presents in the limit of zero magnetic field, with the consequential Landau quantization following a parabolic relation between the displacement field $D$ and the magnetic field $B$. This characteristic prevails up to 100 K in a sufficiently wide effective doping range from 0 to 10$^{13}$ cm$^{-2}$. Our findings thus open up new routes for manipulating the quantum electronic states, which may find applications in such as quantum metrology.
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Submitted 25 September, 2022; v1 submitted 6 October, 2021;
originally announced October 2021.
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Intermediate Polaronic Charge Transport in Organic Crystals from a Many-Body First-Principles Approach
Authors:
Benjamin K. Chang,
Jin-Jian Zhou,
Nien-En Lee,
Marco Bernardi
Abstract:
Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes $-$ band transport, characterized by weak e-ph interactions, and charge hopping due to localized polarons formed by strong e-ph interactions. However…
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Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes $-$ band transport, characterized by weak e-ph interactions, and charge hopping due to localized polarons formed by strong e-ph interactions. However, between these two limiting cases there is a less well understood intermediate regime where polarons are present but transport does not occur via hopping. Here we show a many-body first-principles approach that can accurately predict the carrier mobility in OMCs in the intermediate regime and shed light on its microscopic origin. Our approach combines a finite-temperature cumulant method to describe strong e-ph interactions with Green-Kubo transport calculations. We apply this parameter-free framework to naphthalene crystal, demonstrating electron mobility predictions within a factor of 1.5$-$2 of experiment between 100$-$300 K. Our analysis reveals that electrons couple strongly with both inter- and intramolecular phonons in the intermediate regime, as evidenced by the formation of a broad polaron satellite peak in the electron spectral function and the failure of the Boltzmann equation. Our study advances quantitative modeling of charge transport in complex organic crystals.
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Submitted 7 January, 2022; v1 submitted 17 June, 2021;
originally announced June 2021.
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Dynamical prediction of two meteorological factors using the deep neural network and the long short-term memory $(2)$
Authors:
Ki-Hong Shin,
Jae-Won Jung,
Ki-Ho Chang,
Dong-In Lee,
Cheol-Hwan You,
Kyungsik Kim
Abstract:
This paper presents the predictive accuracy using two-variate meteorological factors, average temperature and average humidity, in neural network algorithms. We analyze result in five learning architectures such as the traditional artificial neural network, deep neural network, and extreme learning machine, long short-term memory, and long-short-term memory with peephole connections, after manipul…
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This paper presents the predictive accuracy using two-variate meteorological factors, average temperature and average humidity, in neural network algorithms. We analyze result in five learning architectures such as the traditional artificial neural network, deep neural network, and extreme learning machine, long short-term memory, and long-short-term memory with peephole connections, after manipulating the computer-simulation. Our neural network modes are trained on the daily time-series dataset during seven years (from 2014 to 2020). From the trained results for 2500, 5000, and 7500 epochs, we obtain the predicted accuracies of the meteorological factors produced from outputs in ten metropolitan cities (Seoul, Daejeon, Daegu, Busan, Incheon, Gwangju, Pohang, Mokpo, Tongyeong, and Jeonju). The error statistics is found from the result of outputs, and we compare these values to each other after the manipulation of five neural networks. As using the long-short-term memory model in testing 1 (the average temperature predicted from the input layer with six input nodes), Tonyeong has the lowest root mean squared error (RMSE) value of 0.866 $(%)$ in summer from the computer-simulation in order to predict the temperature. To predict the humidity, the RMSE is shown the lowest value of 5.732 $(%)$, when using the long short-term memory model in summer in Mokpo in testing 2 (the average humidity predicted from the input layer with six input nodes). Particularly, the long short-term memory model is is found to be more accurate in forecasting daily levels than other neural network models in temperature and humidity forecastings. Our result may provide a computer-simuation basis for the necessity of exploring and develping a novel neural network evaluation method in the future.
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Submitted 28 April, 2021;
originally announced April 2021.
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Dynamical prediction of two meteorological factors using the deep neural network and the long short term memory $(1)$
Authors:
Ki Hong Shin,
Jae Won Jung,
Sung Kyu Seo,
Cheol Hwan You,
Dong In Lee,
Jisun Lee,
Ki Ho Chang,
Woon Seon Jung,
Kyungsik Kim
Abstract:
It is important to calculate and analyze temperature and humidity prediction accuracies among quantitative meteorological forecasting. This study manipulates the extant neural network methods to foster the predictive accuracy. To achieve such tasks, we analyze and explore the predictive accuracy and performance in the neural networks using two combined meteorological factors (temperature and humid…
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It is important to calculate and analyze temperature and humidity prediction accuracies among quantitative meteorological forecasting. This study manipulates the extant neural network methods to foster the predictive accuracy. To achieve such tasks, we analyze and explore the predictive accuracy and performance in the neural networks using two combined meteorological factors (temperature and humidity). Simulated studies are performed by applying the artificial neural network (ANN), deep neural network (DNN), extreme learning machine (ELM), long short-term memory (LSTM), and long short-term memory with peephole connections (LSTM-PC) machine learning methods, and the accurate prediction value are compared to that obtained from each other methods. Data are extracted from low frequency time-series of ten metropolitan cities of South Korea from March 2014 to February 2020 to validate our observations. To test the robustness of methods, the error of LSTM is found to outperform that of the other four methods in predictive accuracy. Particularly, as testing results, the temperature prediction of LSTM in summer in Tongyeong has a root mean squared error (RMSE) value of 0.866 lower than that of other neural network methods, while the mean absolute percentage error (MAPE) value of LSTM for humidity prediction is 5.525 in summer in Mokpo, significantly better than other metropolitan cities.
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Submitted 16 January, 2021;
originally announced January 2021.
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Development of Si based anodes for Li-ion batteries from a rational component design
Authors:
Keke Chang,
Yong Du
Abstract:
Inspired by the wisdom of metallurgists in designing new alloys, the Integrated Computational Materials Engineering (ICME) based design strategy is proposed for development of Si based anodes for Li-ion batteries (LIBs). The strategy starts with a rational component design of Si-X, where X is the additive component(s) helping to overcome the problems of the pure Si anodes. An optimization of the c…
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Inspired by the wisdom of metallurgists in designing new alloys, the Integrated Computational Materials Engineering (ICME) based design strategy is proposed for development of Si based anodes for Li-ion batteries (LIBs). The strategy starts with a rational component design of Si-X, where X is the additive component(s) helping to overcome the problems of the pure Si anodes. An optimization of the composition, structure, property and performance of the Si-X anode is followed to fulfill the requirements for its commercialization. In addition to the widely applied designing scheme for the nanostructured Si anodes, the presently proposed one from the ICME based rational component design is expected to accelerate the discovery of the promising Si based anodes for commercial LIBs.
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Submitted 7 December, 2020;
originally announced December 2020.
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Exciton vortices in two-dimensional hybrid perovskite monolayers
Authors:
Yingda Chen,
Dong Zhang,
Kai Chang
Abstract:
We study theoretically the exciton Bose-Einstein condensation and exciton vortices in a two-dimensional (2D) perovskite (PEA)2PbI4 monolayer. Combining the first-principles calculations and the Keldysh model, the exciton binding energy of (PEA)2PbI4 in a monolayer can approach hundreds meV, which make it possible to observe the excitonic effect at room temperature. Due to the large exciton binding…
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We study theoretically the exciton Bose-Einstein condensation and exciton vortices in a two-dimensional (2D) perovskite (PEA)2PbI4 monolayer. Combining the first-principles calculations and the Keldysh model, the exciton binding energy of (PEA)2PbI4 in a monolayer can approach hundreds meV, which make it possible to observe the excitonic effect at room temperature. Due to the large exciton binding energy, and hence the high density of excitons, we find that the critical temperature of the exciton condensation could approach the liquid nitrogen regime. In presence of perpendicular electric fields, the dipole-dipole interaction between excitons is found to drive the condensed excitons into patterned vortices, as the evolution time of vortex patterns is comparable to the exciton lifetime.
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Submitted 5 November, 2020;
originally announced November 2020.
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Colloquium: Physical properties of group-IV monochalcogenide monolayers
Authors:
Salvador Barraza-Lopez,
Benjamin M. Fregoso,
John W. Villanova,
Stuart S. P. Parkin,
Kai Chang
Abstract:
We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally-driven two-dimensional structural transformations. Additionally, these 2D materials also d…
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We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous polarization, soft elastic constants, structural degeneracies, and thermally-driven two-dimensional structural transformations. Additionally, these 2D materials also display selective valley excitations, valley Hall effects, and persistent spin helix behavior. After a description of their Raman spectra, a discussion of optical properties arising from their lack of centrosymmetry---such as an unusually strong second-harmonic intensity, large bulk photovoltaic effects, photostriction, and tunable exciton binding energies---is provided as well. The physical properties observed in these materials originate from (correlate with) their intrinsic and switchable electric polarization, and the physical behavior hereby reviewed could be of use in non-volatile memory, valleytronic, spintronic, and optoelectronic devices: these 2D multiferroics enrich and diversify the 2D materials toolbox.
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Submitted 9 September, 2020;
originally announced September 2020.
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Giant Flexoelectricity in Bent Silicon Thinfilms
Authors:
Dong-Bo Zhang,
Kai Chang
Abstract:
We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variatio…
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We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear response theory, we illustrate such charge migration that is driven by an electric field effect in bent silicon thinfilms. Due to such charge migration, the variation of atomic charge no longer represents a linear response to strain gradient and the resulting giant flexoelectric coeffcients being size dependent cannot be treated as a bulk property. The obtained flexoelectric coefficients compare well with the typical experimental values as reported in various ceramics. Our results shed light on elucidating the discrepancy between theory and experiment,and pave a new way to discover excellent flexoelectric performance in conventional materials.
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Submitted 26 August, 2020;
originally announced August 2020.
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Geometric photon-drag effect and nonlinear shift current in centrosymmetric crystals
Authors:
Li-kun Shi,
Dong Zhang,
Kai Chang,
Justin C. W. Song
Abstract:
The nonlinear shift current, also known as the bulk photovoltaic current generated by linearly polarized light, has long been known to be absent in crystals with inversion symmetry. Here we argue that a non-zero shift current in centrosymmetric crystals can be activated by a photon-drag effect. Photon-drag shift current proceeds from a `shift current dipole' (a geometric quantity characterizing in…
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The nonlinear shift current, also known as the bulk photovoltaic current generated by linearly polarized light, has long been known to be absent in crystals with inversion symmetry. Here we argue that a non-zero shift current in centrosymmetric crystals can be activated by a photon-drag effect. Photon-drag shift current proceeds from a `shift current dipole' (a geometric quantity characterizing interband transitions) and manifests a purely transverse response in centrosymmetric crystals. This transverse nature proceeds directly from the shift-vector's pseudovector nature under mirror operation and underscores its intrinsic geometric origin. Photon-drag shift current can greatly enhanced by coupling to polaritons and provides a new and sensitive tool to interrogate the subtle interband coherences of materials with inversion symmetry previously thought to be inaccessible via photocurrent probes.
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Submitted 11 June, 2020;
originally announced June 2020.
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Intrinsic 2D-XY ferromagnetism in a van der Waals monolayer
Authors:
Amilcar Bedoya-Pinto,
Jing-Rong Ji,
Avanindra Pandeya,
Pierluigi Gargiani,
Manuel Valvidares,
Paolo Sessi,
Florin Radu,
Kai Chang,
Stuart Parkin
Abstract:
Long before the recent fascination with two-dimensional materials, the critical behaviour and universality scaling of phase transitions in low-dimensional systems has been a topic of great interest. Particularly intriguing is the case of long-range magnetic order in two dimensions, once considered to be excluded in systems with continuous symmetry by the Hohenberg-Mermin-Wagner theorem. While an o…
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Long before the recent fascination with two-dimensional materials, the critical behaviour and universality scaling of phase transitions in low-dimensional systems has been a topic of great interest. Particularly intriguing is the case of long-range magnetic order in two dimensions, once considered to be excluded in systems with continuous symmetry by the Hohenberg-Mermin-Wagner theorem. While an out-of-plane anisotropy has been shown to stabilize 2D magnetic order, this proof has remained elusive for a 2D magnet with in-plane rotational symmetry. Here, we construct a nearly ideal easy-plane system, a CrCl3 monolayer grown on Graphene/6H-SiC (0001), and unambiguously demonstrate robust in-plane ferromagnetic ordering with a critical scaling behaviour characteristic of a 2D-XY system. These observations suggest the first realization of a finite-size Berezinskii-Kosterlitz-Thouless (BKT) phase transition in a large-area, quasi-freestanding, van der Waals monolayer magnet with a XY universality class; and further constitute an ideal platform to study exotic phenomena like superfluid spin transport or 2D topological in-plane spin textures -- such as merons.
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Submitted 16 February, 2021; v1 submitted 13 June, 2020;
originally announced June 2020.
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Experimental formation of monolayer group-IV monochalcogenides
Authors:
Kai Chang,
Stuart S. P. Parkin
Abstract:
Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A fu…
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Monolayer group-IV monochalcogenides (MX, M = Ge, Sn, Pb; X = S, Se, Te) are a family of novel two-dimensional (2D) materials that have atomic structures closely related to that of the staggered black phosphorus lattice. The structure of most monolayer MX materials exhibits a broken inversion symmetry, and many of them exhibit ferroelectricity with a reversible in-plane electric polarization. A further consequence of the noncentrosymmetric structure is that when coupled with strong spin-orbit coupling, many MX materials are promising for the future applications in non-linear optics, photovoltaics, spintronics and valleytronics. Nevertheless, because of the relatively large exfoliation energy, the creation of monolayer MX materials is not easy, which hinders the integration of these materials into the fast-developing field of 2D material heterostructures. In this Perspective, we review recent developments in experimental routes to the creation of monolayer MX, including molecular beam epitaxy and two-step etching methods. Other approaches that could be used to prepare monolayer MX are also discussed, such as liquid phase exfoliation and solution phase synthesis. A quantitative comparison between these different methods is also presented.
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Submitted 12 June, 2020;
originally announced June 2020.
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Direct observation of handedness-dependent quasiparticle interference in the two enantiomers of topological chiral semimetal PdGa
Authors:
Paolo Sessi,
Feng-Ren Fan,
Felix Küster,
Kaustuv Manna,
Niels B. M. Schröter,
Jing-Rong Ji,
Samuel Stolz,
Jonas A. Krieger,
Ding Pei,
Timur K. Kim,
Pavel Dudin,
Cephise Cacho,
Roland Widmer,
Horst Borrmann,
Wujun Shi,
Kai Chang,
Yan Sun,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they…
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It has recently been proposed that combining chirality with topological band theory may result in a totally new class of fermions. These particles have distinct properties: they appear at high symmetry points of the reciprocal lattice, they are connected by helicoidal surface Fermi arcs spanning the entire Brillouin zone, and they are expected to exist over a large energy range. Additionally, they are expected to give rise to totally new effects forbidden in other topological classes. Understanding how these unconventional quasiparticles propagate and interact is crucial for exploiting their potential in innovative chirality-driven device architectures. These aspects necessarily rely on the detection of handedness-dependent effects in the two enantiomers and remain largely unexplored so far. Here, we use scanning tunnelling microscopy to visualize the electronic properties of both enantiomers of the prototypical chiral topological semimetal PdGa at the atomic scale. We reveal that the surface-bulk connectivity goes beyond ensuring the existence of topological Fermi arcs, but also determines how quasiparticles propagate and scatter at impurities, giving rise to chiral quantum interference patterns of opposite handedness and opposite spiralling direction for the two different enantiomers, a direct manifestation of the change of sign of their Chern number. Additionally, we demonstrate that PdGa remains topologically non-trivial over a large energy range, experimentally detecting Fermi arcs in an energy window of more than 1.6 eV symmetrically centerd around the Fermi level. These results are rationalized in terms of the deep connection between chirality in real and reciprocal space in this class of materials, and they allow to identify PdGa as an ideal topological chiral semimetal.
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Submitted 6 May, 2020;
originally announced May 2020.