Showing 1–20 of 20 results for author: Chang, C S

Pulsed-mode metalorganic vapor-phase epitaxy of GaN on graphene-coated c-sapphire for freestanding GaN thin films

Authors: Seokje Lee, Muhammad S. Abbas, Dongha Yoo, Keundong Lee, Tobiloba G. Fabunmi, Eunsu Lee, Han Ik Kim, Imhwan Kim, Daniel Jang, Sangmin Lee, Jusang Lee, Ki-Tae Park, Changgu Lee, Miyoung Kim, Yun Seog Lee, Celesta S. Chang, Gyu-Chul Yi

Abstract: We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off using thermal… ▽ More We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films. These films, exhibiting excellent single crystallinity, were utilized to fabricate transferable GaN LEDs by heteroepitaxially growing InxGa1-xN/GaN multiple quantum wells and a p-GaN layer on the GaN films, showing their potential application in advanced optoelectronic devices. △ Less

Submitted 5 December, 2023; v1 submitted 8 October, 2023; originally announced October 2023.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright 2023 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c03333

Investigations of Graphene on SrTiO3 Single-Crystal using Confocal Raman Spectroscopy

Authors: S. Shrestha, C. S. Chang, S. Lee, N. L. Kothalawala, D. Y. Kim, M. Minola, J. Kim, A. Seo

Abstract: Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samp… ▽ More Graphene layers placed on SrTiO3 single-crystal substrates were investigated using temperature-dependent confocal Raman spectroscopy. This approach successfully resolved distinct Raman modes of graphene that are often untraceable in conventional measurements due to the strong Raman scattering background of SrTiO3. Information on defects and strain states was obtained for a few graphene/SrTiO3 samples that were synthesized by different techniques. This confocal Raman spectroscopic approach can shed light on the investigation of not only this graphene/SrTiO3 system but also various two-dimensional layered materials whose Raman modes interfere with their substrates. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Comments: 6 pages, 3 figures

Multiplication of freestanding semiconductor membranes from a single wafer by advanced remote epitaxy

Authors: Hyunseok Kim, Yunpeng Liu, Kuangye Lu, Celesta S. Chang, Kuan Qiao, Ki Seok Kim, Bo-In Park, Junseok Jeong, Menglin Zhu, Jun Min Suh, Yongmin Baek, You Jin Ji, Sungsu Kang, Sangho Lee, Ne Myo Han, Chansoo Kim, Chanyeol Choi, Xinyuan Zhang, Haozhe Wang, Lingping Kong, Jungwon Park, Kyusang Lee, Geun Young Yeom, Sungkyu Kim, Jinwoo Hwang , et al. (4 additional authors not shown)

Abstract: Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to… ▽ More Freestanding single-crystalline membranes are an important building block for functional electronics. Especially, compounds semiconductor membranes such as III-N and III-V offer great opportunities for optoelectronics, high-power electronics, and high-speed computing. Despite huge efforts to produce such membranes by detaching epitaxial layers from donor wafers, however, it is still challenging to harvest epitaxial layers using practical processes. Here, we demonstrate a method to grow and harvest multiple epitaxial membranes with extremely high throughput at the wafer scale. For this, 2D materials are directly formed on III-N and III-V substrates in epitaxy systems, which enables an advanced remote epitaxy scheme comprised of multiple alternating layers of 2D materials and epitaxial layers that can be formed by a single epitaxy run. Each epilayer in the multi-stack structure is then harvested by layer-by-layer peeling, producing multiple freestanding membranes with unprecedented throughput from a single wafer. Because 2D materials allow peeling at the interface without damaging the epilayer or the substrate, wafers can be reused for subsequent membrane production. Therefore, this work represents a meaningful step toward high-throughput and low-cost production of single-crystal membranes that can be heterointegrated. △ Less

Submitted 7 April, 2022; originally announced April 2022.

Momentum-resolved electronic band structure and offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction

Authors: Tianlun Yu, John Wright, Guru Khalsa, Betül Pamuk, Celesta S. Chang, Yury Matveyev, Thorsten Schmitt, Donglai Feng, David Muller, Grace Xing, Debdeep Jena, Vladimir N. Strocov

Abstract: The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituen… ▽ More The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituents of this Schottky heterointerface, and determine their momentum-dependent interfacial band offset as well as the band-bending profile into GaN. We find, in particular, that the Fermi states in NbN are aligned against the band gap in GaN, which excludes any significant electronic cross-talk of the superconducting states in NbN through the interface to GaN. We support the experimental findings with first-principles calculations for bulk NbN and GaN. The Schottky barrier height obtained from photoemission is corroborated by electronic transport and optical measurements. The momentum-resolved understanding of electronic properties elucidated by the combined materials advances and experimental methods in our work opens up new possibilities in systems where interfacial states play a defining role. △ Less

Submitted 11 March, 2021; originally announced March 2021.

Transferring Orbital Angular Momentum to an Electron Beam Reveals Toroidal and Chiral Order

Authors: Kayla X. Nguyen, Yi Jiang, Michael C. Cao, Prafull Purohit, Ajay K. Yadav, Pablo García-Fernández, Mark W. Tate, Celesta S. Chang, Pablo Aguado-Puente, Jorge Íñiguez, Fernando Gomez-Ortiz, Sol M. Gruner, Javier Junquera, Lane W. Martin, Ramamoorthy Ramesh, D. A. Muller

Abstract: Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not coupl… ▽ More Orbital angular momentum and torque transfer play central roles in a wide range of magnetic textures and devices including skyrmions and spin-torque electronics(1-4). Analogous topological structures are now also being explored in ferroelectrics, including polarization vortex arrays in ferroelectric/dielectric superlattices(5). Unlike magnetic toroidal order, electric toroidal order does not couple directly to linear external fields. To develop a mechanism that can control switching in polarization vortices, we utilize a high-energy electron beam and show that transverse currents are generated by polar order in the ballistic limit. We find that the presence of an electric toroidal moment in a ferro-rotational phase transfers a measurable torque and orbital angular momentum to the electron beam. Furthermore, we find that the complex polarization patterns, observed in these heterostructures, are microscopically chiral with a non-trivial axial component of the polarization. This chirality opens the door for the coupling of ferroelectric and optical properties. △ Less

Submitted 9 December, 2020; v1 submitted 7 December, 2020; originally announced December 2020.

$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films

Authors: Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller

Abstract: $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3$ films grown by molecular beam epitaxy. For undoped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films we observe $γ$-phase inclusions between nucleating islands of the $β$-phase at lower growth temperatures (~400-600 $^{\circ}$C). In doped $β$-Ga$_2$O$_3$, a thin layer of the $γ$-phase is observed on the surfaces of films grown with a wide range of n-type dopants and dopant concentrations. The thickness of the $γ$-phase layer was most strongly correlated with the growth temperature, peaking at about 600 $^{\circ}$C. Ga interstitials are observed in $β$-phase, especially near the interface with the $γ$-phase. By imaging the same region of the surface of a Sn-doped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ after ex-situ heating up to 400 $^{\circ}$C, a $γ$-phase region is observed to grow above the initial surface, accompanied by a decrease in Ga interstitials in the $β$-phase. This suggests that the diffusion of Ga interstitials towards the surface is likely the mechanism for growth of the surface $γ$-phase, and more generally that the more-open $γ$-phase may offer diffusion pathways to be a kinetically-favored and early-forming phase in the growth of Ga$_2$O$_3$. △ Less

Submitted 30 November, 2020; originally announced December 2020.

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

Abstract: This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the a… ▽ More This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 micrometer per hour for Ga2O3--Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 micrometer. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. △ Less

Submitted 30 October, 2020; originally announced November 2020.

Comments: 15 pages, 12 figures

Journal ref: APL Mater. 9, 031101 (2021)

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Authors: Riena Jinno, Celesta S. Chang, Takeyoshi Onuma, Yongjin Cho, Shao-Ting Ho, Michael C. Cao, Kevin Lee, Vladimir Protasenko, Darrell G. Schlom, David A. Muller, Huili G. Xing, Debdeep Jena

Abstract: Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi… ▽ More Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date. △ Less

Submitted 16 July, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 22 pages, 8 figures

In situ modification of delafossite type PdCoO2 bulk single crystal for reversible hydrogen sorption and fast hydrogen evolution

Authors: Guowei Li, Seunghyun Khim, Celesta S. Chang, Chenguang Fu, Nabhanila Nandi, Fan Li, Qun Yang, Graeme R. Blake, Stuart Parkin, Gudrun Auffermann, Yan Sun, David A. Muller, Andrew P. Mackenzie, Claudia Felser

Abstract: The observation of extraordinarily high conductivity in delafossite-type PdCoO2 is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO2. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single crystal PdCoO2 as a promising… ▽ More The observation of extraordinarily high conductivity in delafossite-type PdCoO2 is of great current interest, and there is some evidence that electrons behave like a fluid when flowing in bulk crystals of PdCoO2. Thus, this material is an ideal platform for the study of the electron transfer processes in heterogeneous reactions. Here, we report the use of bulk single crystal PdCoO2 as a promising electrocatalyst for hydrogen evolution reactions (HERs). An overpotential of only 31 mV results in a current density of 10 mA cm^(-2), accompanied by high long-term stability. We have precisely determined that the crystal surface structure is modified after electrochemical activation with the formation of strained Pd nanoclusters in the surface layer. These nanoclusters exhibit reversible hydrogen sorption and desorption, creating more active sites for hydrogen access. The bulk PdCoO2 single crystal with ultra-high conductivity, which acts as a natural substrate for the Pd nanoclusters, provides a high-speed channel for electron transfer △ Less

Submitted 25 March, 2020; originally announced March 2020.

Disentangling magnetic and grain contrast in polycrystalline FeGe thin films using four-dimensional Lorentz scanning transmission electron microscopy

Authors: Kayla X. Nguyen, Xiyue S. Zhang, Emrah Turgut, Michael C. Cao, Jack Glaser, Zhen Chen, Matthew J. Stolt, Celesta S. Chang, Yu-Tsun Shao, Song Jin, Gregory D. Fuchs, David A. Muller

Abstract: The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable materi… ▽ More The study of nanoscale chiral magnetic order in polycrystalline materials with a strong Dzyaloshinkii-Moriya interaction (DMI) is interesting for the observation of magnetic phenomena at grain boundaries and interfaces. One such material is sputter-deposited B20 FeGe on Si, which has been actively investigated as the basis for low-power, high-density magnetic memory technology in a scalable material platform. Although conventional Lorentz electron microscopy provides the requisite spatial resolution to probe chiral magnetic textures in single-crystal FeGe, probing the magnetism of sputtered B20 FeGe is more challenging because the sub-micron crystal grains add confounding contrast. We address the challenge of disentangling magnetic and grain contrast by applying 4-dimensional Lorentz scanning transmission electron microscopy using an electron microscope pixel array detector. Supported by analytical and numerical models, we find that the most important parameter for imaging magnetic materials with polycrystalline grains is the ability for the detector to sustain large electron doses, where having a high-dynamic range detector becomes extremely important. Despite the small grain size in sputtered B20 FeGe on Si, using this approach we are still able to observe helicity switching of skyrmions and magnetic helices across two adjacent grains as they thread through neighboring grains. We reproduce this effect using micromagnetic simulations by assuming that the grains have distinct orientation and magnetic chirality and find that magnetic helicity couples to crystal chirality. Our methodology for imaging magnetic textures is applicable to other thin-film magnets used for spintronics and memory applications, where an understanding of how magnetic order is accommodated in polycrystalline materials is important. △ Less

Submitted 7 March, 2022; v1 submitted 19 January, 2020; originally announced January 2020.

Comments: 22 pages, 8 figures, 2 appendix figures

Controlled introduction of defects to delafossite metals by electron irradiation

Authors: V. Sunko, P. H. McGuinness, C. S. Chang, E. Zhakina, S. Khim, C. E. Dreyer, M. Konczykowski, M. König, D. A. Muller, A. P. Mackenzie

Abstract: The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence o… ▽ More The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence of highly unusual levels of crystalline perfection. We report the results of experiments in which high energy electron irradiation was used to introduce point disorder to the Pd and Pt layers in which the conduction occurs. We obtain the cross-section for formation of Frenkel pairs in absolute units, and cross-check our analysis with first principles calculations of the relevant atomic displacement energies. We observe an increase of resistivity that is linear in defect density with a slope consistent with scattering in the unitary limit. Our results enable us to deduce that the as-grown crystals contain extremely low levels of in-plane defects of approximately $0.001\%$. This confirms that crystalline perfection is the most important factor in realizing the long mean free paths, and highlights how unusual these delafossite metals are in comparison with the vast majority of other multi-component oxides and alloys. We discuss the implications of our findings for future materials research. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. X 10, 021018 (2020)

Stability, bifurcation, and softening in discrete systems: A conceptual approach for granular materials

Authors: Matthew R. Kuhn, Ching S. Chang

Abstract: Matrix stiffness expressions are derived for the particle movements in an assembly of rigid granules having compliant contacts. The derivations include stiffness terms that arise from the particle shapes at their contacts. These geometric stiffness terms may become significant during granular failure. The geometric stiffness must be added to the mechanical stiffnesses of the contacts to produce th… ▽ More Matrix stiffness expressions are derived for the particle movements in an assembly of rigid granules having compliant contacts. The derivations include stiffness terms that arise from the particle shapes at their contacts. These geometric stiffness terms may become significant during granular failure. The geometric stiffness must be added to the mechanical stiffnesses of the contacts to produce the complete stiffness. With frictional contacts, this stiffness expression is incrementally nonlinear, having multiple loading branches. To aid the study of material behavior, a modified stiffness is derived for isolated granular clusters that are considered detached from the rest of a granular body. Criteria are presented for bifurcation, instability, and softening of such isolated and discrete granular sub-regions. Examples show that instability and softening can result entirely from the geometric terms in the matrix stiffness. △ Less

Submitted 31 December, 2018; originally announced January 2019.

Journal ref: International Journal of Solids and Structures, 43(20):6026-6051, 2006

Exceptionally high, strongly temperature dependent, spin Hall conductivity of SrRuO3

Authors: Yongxi Ou, Zhe Wang, Celesta S. Chang, Hari P. Nair, Hanjong Paik, Neal Reynolds, D. C. Ralph, D. A. Muller, D. G. Schlom, R. A. Buhrman

Abstract: Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite S… ▽ More Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current as the result of extrinsic spin-dependent, skew or/and side-jump, scattering, or in the intrinsic case due to Berry curvature in the conduction band. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO3 has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO3 has a strongly temperature (T) dependent spin Hall conductivity which becomes particularly high at low T, e.g. σ_{SH} \geqslant (\hbar/2e)3x10^{5} Ω^{-1}m^{-1} at 60 K. Below the SrRuO3 ferromagnetic transition, non-standard SOT components develop associated with the magnetic characteristics of the oxide, but these do not dominate as with spin currents from a conventional ferromagnet. Our results establish a new approach for the study of SOI in epitaxial conducting oxide heterostructures and confirm SrRuO3 as a promising candidate material for achieving new and enhanced spintronics functionalities. △ Less

Submitted 25 October, 2018; originally announced October 2018.

Comments: 3 Figures

Journal ref: Nano Lett. 2019, 19, 6, 3663-3670

Measurement of higher-order stress-strain effects in granular materials undergoing non-uniform deformation

Authors: Matthew R. Kuhn, Ching S. Chang

Abstract: Discrete element (DEM) simulations demonstrate that granular materials are non-simple, meaning that the incremental stiffness of a granular assembly depends on the gradients of the strain increment as well as on the strain increment itself. In quasi-static simulations, two-dimensional granular assemblies were stiffer when the imposed deformation was non-uniform than for uniform deformation. The co… ▽ More Discrete element (DEM) simulations demonstrate that granular materials are non-simple, meaning that the incremental stiffness of a granular assembly depends on the gradients of the strain increment as well as on the strain increment itself. In quasi-static simulations, two-dimensional granular assemblies were stiffer when the imposed deformation was non-uniform than for uniform deformation. The contacts between particles were modeled as linear-frictional contacts with no contact moments. The results are interpreted in the context of a higher-order micro-polar continuum, which admits the possibility of higher-order stress and couple-stress. Although the behavior was non-simple, no evidence was found for a couple-stress or an associated stiffness. The experimental results apply consistently to three particle shapes (circles, ovals, and a non-convex cluster shape), to assemblies of three sizes (ranging from 250 to 4000 particles), and at pre-peak and post-peak strains. △ Less

Submitted 30 July, 2018; originally announced July 2018.

Comments: In press, Mechanics Research Communications, 2018

Ultrafast Generation of Pseudo-magnetic Field for Valley Excitons in WSe2 Monolayers

Authors: Jonghwan Kim, Xiaoping Hong, Chenhao Jin, Su-Fei Shi, Chih-Yuan S. Chang, Ming-Hui Chiu, Lain-Jong Li, Feng Wang

Abstract: A new degree of freedom, the valley pseudospin, emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2) and has attracted great scientific interest. The capability to manipulate the valley pseudospin, in analogy to the control of spin in spintronics, can open up exciting opportunities in valleytronics. Here we demonstrate that an ultrafast and ultrahigh valley pseudomagne… ▽ More A new degree of freedom, the valley pseudospin, emerges in atomically thin two-dimensional transition metal dichalcogenides (MX2) and has attracted great scientific interest. The capability to manipulate the valley pseudospin, in analogy to the control of spin in spintronics, can open up exciting opportunities in valleytronics. Here we demonstrate that an ultrafast and ultrahigh valley pseudomagnetic field can be generated using circularly polarized femtosecond pulses to selectively control the valley degree of freedom in monolayer MX2. Employing ultrafast pump-probe spectroscopy, we observed a pure and valley-selective optical Stark effect in WSe2 monolayers from the non-resonant pump, which instantaneously lift the degeneracy of valley exciton transitions without any dissipation. The strength of the optical Stark effect scales linearly with both the pump intensity and the inverse of pump detuning. An energy splitting more than 10 meV between the K and K_prime valley transitions can be achieved, which corresponds to an effective pseudomagnetic field over 170 Tesla. Our study demonstrates efficient and ultrafast control of the valley excitons with optical light, and opens up the possibility to coherent manipulate the valley polarization for quantum information applications. △ Less

Submitted 8 July, 2014; originally announced July 2014.

Journal ref: Science, 346 (2014) 1205-1208

Determination of band alignment in the single layer MoS2/WSe2 heterojunction

Authors: Ming-Hui Chiu, Chendong Zhang, Hung Wei Shiu, Chih-Piao Chuu, Chang-Hsiao Chen, Chih-Yuan S. Chang, Chia-Hao Chen, Mei-Yin Chou, Chih-Kang Shih, Lain-Jong Li

Abstract: The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD heterostructures by using microbeam X-ray photoelectron spectroscopy (μ-XPS) and scanning tunneling microscopy/spectroscopy (STM/S). We determine a type-II alignme… ▽ More The emergence of transition metal dichalcogenides (TMDs) as 2D electronic materials has stimulated proposals of novel electronic and photonic devices based on TMD heterostructures. Here we report the determination of band offsets in TMD heterostructures by using microbeam X-ray photoelectron spectroscopy (μ-XPS) and scanning tunneling microscopy/spectroscopy (STM/S). We determine a type-II alignment between $\textrm{MoS}_2$ and $\textrm{WSe}_2$ with a valence band offset (VBO) value of 0.83 eV and a conduction band offset (CBO) of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of $\textrm{WSe}_2$ and $\textrm{MoS}_2$ are well retained in their respective layers due to a weak interlayer coupling. Moreover, a VBO of 0.94 eV is obtained from density functional theory (DFT), consistent with the experimental determination. △ Less

Submitted 13 April, 2015; v1 submitted 19 June, 2014; originally announced June 2014.

Comments: ^ These authors contributed equally. *Corresponding author E-mail: [email protected], [email protected] 20 pages, 4 figures in main text

Journal ref: Nature Communications 6:7666 (2015)

Metallic spintronic nanofilm as a hydrogen sensor

Authors: Crosby S. Chang, Mikhail Kostylev, Eugene Ivanov

Abstract: We investigate the response of palladium-cobalt bi-layer thin films to hydrogen charging at atmospheric pressure for spintronic applications. We find that hydrogen absorption by the palladium layer results in the narrowing and shifting of the ferromagnetic resonance line for the material. We explain the observed phenomena as originating from reduction in spin pumping effect and from variation in t… ▽ More We investigate the response of palladium-cobalt bi-layer thin films to hydrogen charging at atmospheric pressure for spintronic applications. We find that hydrogen absorption by the palladium layer results in the narrowing and shifting of the ferromagnetic resonance line for the material. We explain the observed phenomena as originating from reduction in spin pumping effect and from variation in the magnetic anisotropy of the cobalt film through an interface effect. The shift of the resonance frequency or field is the easiest to detect. We utilize it to demonstrate functionality of the bi-layer films as a hydrogen sensor. △ Less

Submitted 6 February, 2013; v1 submitted 6 January, 2013; originally announced January 2013.

Study of ageing in Al-Mg-Si alloys by positron annihilation spectroscopy

Authors: J. Banhart, M. Liu, Y. Yan, Z. Liang, C. S. T. Chang, M. Elsayed, M. D. H. Lay

Abstract: In many common Al-Mg-Si alloys (6000 series) intermediate storage at or near 'room temperature' after solutionising leads to pronounced changes of the precipitation kinetics during the ensuing artificial ageing step at \approx 180°C. This is not only an annoyance in production, but also a challenge for researchers. We studied the kinetics of natural 'room temperature' ageing (NA) in Al-Mg-Si alloy… ▽ More In many common Al-Mg-Si alloys (6000 series) intermediate storage at or near 'room temperature' after solutionising leads to pronounced changes of the precipitation kinetics during the ensuing artificial ageing step at \approx 180°C. This is not only an annoyance in production, but also a challenge for researchers. We studied the kinetics of natural 'room temperature' ageing (NA) in Al-Mg-Si alloys by means of various different techniques, namely electrical resistivity and hardness measurement, thermoanalysis and positron lifetime and Doppler broadening (DB) spectroscopy to identify the stages in which the negative effect of NA on artificial ageing might appear. Positron lifetime measurements were carried out in a fast mode, allowing us to measure average lifetimes in below 1 minute. DB measurements were carried out with a single detector and a 68Ge positron source by employing high momentum analysis. The various measurements show that NA is much more complex than anticipated and at least four different stages can be distinguished. The nature of these stages cannot be given with certainty, but a possible sequence includes vacancy diffusion to individual solute atoms, nucleation of solute clusters, Mg agglomeration to clusters and coarsening or ordering of such clusters. Positron lifetime measurements after more complex ageing treatments involving storage at 0°C, 20°C and 180°C have also been carried out and help to understand the mechanisms involved. △ Less

Submitted 11 July, 2012; v1 submitted 9 September, 2011; originally announced September 2011.

Journal ref: Physica B: Physics of Condensed Matter 407, 2689--2696 (2012)

Enhancement of the response of non-uniform resonance modes of a nanostructure in the Picoprobe microwave-current injection ferromagnetic resonance

Authors: C. S. Chang, A. O. Adeyeye, M. Kostylev, S. Samarin

Abstract: The non-uniform standing spin-wave modes in thin magnetic films and nanostructures provide important information about surfaces and buried interfaces. Very often they are lacking in the recorded ferromagnetic resonance spectra for symmetry reasons. In this work we experimentally demonstrate that by direct injection of microwave currents into an array of Permalloy nanostripes using a microscopic mi… ▽ More The non-uniform standing spin-wave modes in thin magnetic films and nanostructures provide important information about surfaces and buried interfaces. Very often they are lacking in the recorded ferromagnetic resonance spectra for symmetry reasons. In this work we experimentally demonstrate that by direct injection of microwave currents into an array of Permalloy nanostripes using a microscopic microwave coaxial to coplanar adaptor one can efficiently excite non-uniform standing spin wave modes with odd symmetry. The proposed method is quick and allows easy spatial mapping of magnetic properties with the resolution down to 100 microns. We have validated this method using an example from a periodical array of nanostripes. The results from direct current injection are compared to that of microstrip-based FMR measurements. △ Less

Submitted 14 March, 2011; v1 submitted 9 February, 2011; originally announced February 2011.

Kinetics of natural aging in Al-Mg-Si alloys studied by positron annihilation lifetime spectroscopy

Authors: J. Banhart, M. D. H. Lay, C. S. T. Chang, A. J. Hill

Abstract: The process of natural aging in pure ternary Al-Mg-Si alloys was studied by positron annihilation lifetime spectroscopy in real time in order to clarify the sequence and kinetics of clustering and precipitation. It was found that natural aging takes place in at least five stages in these alloys, four of which were directly observed. This is interpreted as the result of complex interactions between… ▽ More The process of natural aging in pure ternary Al-Mg-Si alloys was studied by positron annihilation lifetime spectroscopy in real time in order to clarify the sequence and kinetics of clustering and precipitation. It was found that natural aging takes place in at least five stages in these alloys, four of which were directly observed. This is interpreted as the result of complex interactions between vacancies and solute atoms or clusters. One of the early stages of positron lifetime evolution coincides with a clustering process observed by differential scanning calorimetry (DSC) and involves the formation of a positron trap with \sim 0.200 ns lifetime. In later stages, a positron trap with a higher lifetime develops in coincidence with the DSC signal of a second clustering reaction. Mg governs both the kinetics and the lifetime change in this stage. Within the first 10 min after quenching, a period of nearly constant positron lifetime was found for those Mg-rich alloys that later show an insufficient hardness response to artificial aging, the so-called "negative effect." The various processes observed could be described by two effective activation energies that were found by varying the aging temperature from 10 to 37\degree C. △ Less

Submitted 11 July, 2012; v1 submitted 24 June, 2010; originally announced June 2010.

Comments: arXiv admin note: same as v2, to correct mistaken v3

Journal ref: Physical Review B 83, 014101 (2011)