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Showing 1–5 of 5 results for author: Chandrasena, R U

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  1. Electronic structure of a graphene-like artificial crystal of $NdNiO_3$

    Authors: Arian Arab, Xiaoran Liu, O. Köksal, W. Yang, R. U. Chandrasena, S. Middey, M. Kareev, S. Kumar, M. -A. Husanu, Z. Yang, L. Gu, V. N. Strocov, T. -L. Lee, J. Minár, R. Pentcheva, J. Chakhalian, A. X. Gray

    Abstract: Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an imme… ▽ More

    Submitted 27 May, 2019; originally announced May 2019.

  2. Probing single unit-cell resolved electronic structure modulations in oxide superlattices with standing-wave photoemission

    Authors: W. Yang, R. U. Chandrasena, M. Gu, R. M. S. dos Reis, E. J. Moon, Arian Arab, M. -A. Husanu, J. Ciston, V. N. Strocov, J. M. Rondinelli, S. J. May, A. X. Gray

    Abstract: Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomen… ▽ More

    Submitted 11 January, 2019; originally announced January 2019.

    Journal ref: Phys. Rev. B 100, 125119 (2019)

  3. arXiv:1806.07224  [pdf

    cond-mat.mtrl-sci

    Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films

    Authors: M. Golalikhani, Q. Lei, R. U. Chandrasena, L. Kasaei, H. Park, J. Bai, P. Orgiani, J. Ciston, G. E. Sterbinsky, D. A. Arena, P. Shafer, E. Arenholz, B. A. Davidson, A. J. Millis, A. X. Gray, X. X. Xi

    Abstract: The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect th… ▽ More

    Submitted 19 June, 2018; originally announced June 2018.

    Journal ref: Nat Commun. 2018; 9: 2206

  4. arXiv:1801.05374  [pdf, other

    cond-mat.mtrl-sci cond-mat.str-el

    Electronic structure of negative charge transfer CaFeO3 across the metal-insulator transition

    Authors: Paul C. Rogge, Ravini U. Chandrasena, Antonio Cammarata, Robert J. Green, Padraic Shafer, Benjamin M. Lefler, Amanda Huon, Arian Arab, Elke Arenholz, Ho Nyung Lee, Tien-Lin Lee, Slavomír Nemšák, James M. Rondinelli, Alexander X. Gray, Steven J. May

    Abstract: We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functi… ▽ More

    Submitted 1 February, 2018; v1 submitted 16 January, 2018; originally announced January 2018.

    Comments: Minor typographic changes made

    Journal ref: Phys. Rev. Mater. 2, 015002 (2018)

  5. arXiv:1610.06885  [pdf

    cond-mat.mes-hall

    Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

    Authors: Qingyu Lei, Maryam Golalikhani, Bruce A. Davidson, Guozhen Liu, D. G. Schlom, Qiao Qiao, Yimei Zhu, Ravini U. Chandrasena, Weibing Yang, Alexander X. Gray, Elke Arenholz, Andrew K. Farrar, Dmitri A. Tenne, Minhui Hu, Jiandong Guo, Rakesh K. Singh, X. X. Xi

    Abstract: Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-… ▽ More

    Submitted 21 October, 2016; originally announced October 2016.