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Electronic structure of a graphene-like artificial crystal of $NdNiO_3$
Authors:
Arian Arab,
Xiaoran Liu,
O. Köksal,
W. Yang,
R. U. Chandrasena,
S. Middey,
M. Kareev,
S. Kumar,
M. -A. Husanu,
Z. Yang,
L. Gu,
V. N. Strocov,
T. -L. Lee,
J. Minár,
R. Pentcheva,
J. Chakhalian,
A. X. Gray
Abstract:
Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an imme…
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Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Angstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of $NdNiO_3$ confined between two 4-unit cell-thick layers of insulating $LaAlO_3$. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.
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Submitted 27 May, 2019;
originally announced May 2019.
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Probing single unit-cell resolved electronic structure modulations in oxide superlattices with standing-wave photoemission
Authors:
W. Yang,
R. U. Chandrasena,
M. Gu,
R. M. S. dos Reis,
E. J. Moon,
Arian Arab,
M. -A. Husanu,
J. Ciston,
V. N. Strocov,
J. M. Rondinelli,
S. J. May,
A. X. Gray
Abstract:
Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomen…
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Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomena with depth-dependent atomic resolution as well as element- and orbital selectivity. Here, we utilize a combination of core-level and valence-band soft x-ray standing-wave photoemission spectroscopy, in conjunction with scanning transmission electron microscopy, to probe the depth-dependent and single-unit-cell resolved electronic structure of an isovalent manganite superlattice [Eu0.7Sr0.3MnO3/La0.7Sr0.3MnO3]x15 wherein the electronic-structural properties are intentionally modulated with depth via engineered oxygen octahedra rotations/tilts and A-site displacements. Our unit-cell resolved measurements reveal significant transformations in the local chemical and electronic valence-band states, which are consistent with the layer-resolved first-principles theoretical calculations, thus opening the door for future depth-resolved studies of a wide variety of hetero-engineered material systems.
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Submitted 11 January, 2019;
originally announced January 2019.
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Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
Authors:
M. Golalikhani,
Q. Lei,
R. U. Chandrasena,
L. Kasaei,
H. Park,
J. Bai,
P. Orgiani,
J. Ciston,
G. E. Sterbinsky,
D. A. Arena,
P. Shafer,
E. Arenholz,
B. A. Davidson,
A. J. Millis,
A. X. Gray,
X. X. Xi
Abstract:
The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect th…
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The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect the observable properties in the ultrathin films. Here we report results obtained for near-ideal LaNiO3 films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO3 substrates. We find that the room-temperature metallic behavior persists until the film thickness is reduced to an unprecedentedly small 1.5 unit cells (NiO2 termination). Electronic structure measurements using x-ray absorption spectroscopy and first-principles calculation suggest that oxygen vacancies existing in the films also contribute to the metal insulator transition.
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Submitted 19 June, 2018;
originally announced June 2018.
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Electronic structure of negative charge transfer CaFeO3 across the metal-insulator transition
Authors:
Paul C. Rogge,
Ravini U. Chandrasena,
Antonio Cammarata,
Robert J. Green,
Padraic Shafer,
Benjamin M. Lefler,
Amanda Huon,
Arian Arab,
Elke Arenholz,
Ho Nyung Lee,
Tien-Lin Lee,
Slavomír Nemšák,
James M. Rondinelli,
Alexander X. Gray,
Steven J. May
Abstract:
We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functi…
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We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functional calculations, we resolve the element-specific changes to the electronic structure across the metal-insulator transition. We demonstrate that the Fe electron valence undergoes no observable change between the metallic and insulating states, whereas the O electronic configuration undergoes significant changes. This strongly supports the bond-disproportionation model of the metal-insulator transition for CaFeO3 and highlights the importance of ligand holes in its electronic structure. By sensitively measuring the ligand hole density, however, we find that it increases by ~5-10% in the insulating state, which we ascribe to a further localization of electron charge on the Fe sites. These results provide detailed insight into the metal-insulator transition of negative charge transfer compounds and should prove instructive for understanding metal-insulator transitions in other late transition metal compounds such as the nickelates.
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Submitted 1 February, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.
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Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy
Authors:
Qingyu Lei,
Maryam Golalikhani,
Bruce A. Davidson,
Guozhen Liu,
D. G. Schlom,
Qiao Qiao,
Yimei Zhu,
Ravini U. Chandrasena,
Weibing Yang,
Alexander X. Gray,
Elke Arenholz,
Andrew K. Farrar,
Dmitri A. Tenne,
Minhui Hu,
Jiandong Guo,
Rakesh K. Singh,
X. X. Xi
Abstract:
Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-…
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Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With ALL-Laser MBE we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.
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Submitted 21 October, 2016;
originally announced October 2016.
