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Isotope Exchange Raman Spectroscopy (IERS): a novel technique to probe physicochemical processes $in$ $situ$
Authors:
Alexander Stangl,
Dolors Pla,
Caroline Pirovano,
Odette Chaix-Pluchery,
Federico Baiutti,
Francesco Chiabrera,
Albert Tarancón,
Carmen Jiménez,
Michel Mermoux,
Mónica Burriel
Abstract:
We have developed a novel in situ methodology for the direct study of mass transport properties in oxides with spatial and unprecedented time resolution, based on Raman spectroscopy coupled to isothermal isotope exchanges. Changes in the isotope concentration, resulting in a Raman frequency shift, can be followed in real time, not accessible by conventional methods, enabling complementary insights…
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We have developed a novel in situ methodology for the direct study of mass transport properties in oxides with spatial and unprecedented time resolution, based on Raman spectroscopy coupled to isothermal isotope exchanges. Changes in the isotope concentration, resulting in a Raman frequency shift, can be followed in real time, not accessible by conventional methods, enabling complementary insights for the study of ion transport properties of electrode and electrolyte materials for advanced solid-state electrochemical devices. The proof of concept and strengths of isotope exchange Raman spectroscopy (IERS) are demonstrated by studying the oxygen isotope back-exchange in gadolinium-doped ceria (CGO) thin films. Resulting oxygen self-diffusion and surface exchange coefficients are compared to conventional time-of-flight secondary ion mass spectrometry (ToF-SIMS) characterisation and literature values, showing good agreement, while at the same time providing additional insight, challenging established assumptions. IERS captivates through its rapidity, simple setup, non-destructive nature, cost effectiveness and versatile fields of application and thus can readily be integrated as new standard tool for in situ and operando characterization in many laboratories worldwide. The applicability of this method is expected to consolidate our understanding of elementary physicochemical processes and impact various emerging fields including solid oxide cells, battery research and beyond.
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Submitted 7 April, 2023;
originally announced April 2023.
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Al4SiC4 vibrational properties: Density Functional Theory calculations compared to Raman and Infrared spectroscopy measurements
Authors:
L. Pedesseau,
O. Chaix-Pluchery,
M. Modreanu,
D. Chaussende,
E. Sarigiannidou,
A. Rolland,
J. Even,
O. Durand
Abstract:
Al4SiC4 is a wide band gap semiconductor with numerous potential technological applications. We report here the first thorough experimental Raman and Infrared (IR) investigation of vibrational properties of Al4SiC4 single crystals grown by high temperature solution growth method. The experimental results are compared with the full theoretical analysis of vibrational properties based on Density Fun…
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Al4SiC4 is a wide band gap semiconductor with numerous potential technological applications. We report here the first thorough experimental Raman and Infrared (IR) investigation of vibrational properties of Al4SiC4 single crystals grown by high temperature solution growth method. The experimental results are compared with the full theoretical analysis of vibrational properties based on Density Functional Theory calculations that are revisited here. We have obtained a good agreement between the experimental and calculated Raman phonon modes and this allowed the symmetry assignment of all the measured Raman modes. We have revisited the DFT calculation of the IR active phonon modes and our results for LO-TO splitting indicate a substantial decrease of the variation of omega(LO-TO) compared with the previous reported calculation. Moreover, most of the IR modes have been symmetry assigned from the comparison of the experimental IR spectra with the corresponding Raman spectra and the Al4SiC4 calculated phonon modes.
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Submitted 16 December, 2016;
originally announced December 2016.
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Al4SiC4 würtzite crystal: structural, optoelectronic, elastic and piezoelectric properties
Authors:
L. Pedesseau,
J. Even,
M. Modreanu,
D. Chaussende,
O. Chaix-Pluchery,
O. Durand
Abstract:
New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4). A state of the art implementation of the Density Functional Theory is used to analyze the experimental crystal structure, the Born charges, the elastic and piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band s…
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New experimental results supported by theoretical analyses are proposed for aluminum silicon carbide (Al4SiC4). A state of the art implementation of the Density Functional Theory is used to analyze the experimental crystal structure, the Born charges, the elastic and piezoelectric properties. The Born charge tensor is correlated to the local bonding environment for each atom. The electronic band structure is computed including self-consistent many-body corrections. Al4SiC4 material properties are compared to other wide band gap Würtzite materials. From a comparison between an ellipsometry study of the optical properties and theoretical results, we conclude that the Al4SiC4 material has indirect and direct band gap energies of about 2.5eV and 3.2 eV respectively.
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Submitted 3 August, 2015; v1 submitted 24 July, 2015;
originally announced July 2015.
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Phase transition close to room temperature in BiFeO3 thin films
Authors:
J. Kreisel,
P. Jadhav,
O. Chaix-Pluchery,
M. Varela,
N. Dix,
F. Sanchez,
J. Fontcuberta
Abstract:
BiFeO3 (BFO) multiferroic oxide has a complex phase diagram that can be mapped by appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, displays a reversible temperature-induced phase transition at about 100\circ, thus close to room temperature.
BiFeO3 (BFO) multiferroic oxide has a complex phase diagram that can be mapped by appropriately substrate-induced strain in epitaxial films. By using Raman spectroscopy, we conclusively show that films of the so-called supertetragonal T-BFO phase, stabilized under compressive strain, displays a reversible temperature-induced phase transition at about 100\circ, thus close to room temperature.
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Submitted 28 July, 2011;
originally announced July 2011.
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Strain analysis of multiferroic BiFeO3-CoFe2O4 nanostructures by Raman scattering
Authors:
O. Chaix-Pluchery,
C. Cochard,
P. Jadhav,
J. Kreisel,
N. Dix,
F. Sanchez,
J. Fontcuberta
Abstract:
We report a Raman scattering investigation of columnar BiFeO3-CoFe2O4 (BFO-CFO) epitaxial thin film nanostructures, where BFO pillars are embedded in a CFO matrix. The feasibility of a strain analysis is illustrated through an investigation of two nanostructures with different BFO-CFO ratios. We show that the CFO matrix presents the same strain state in both nanostructures, while the strain state…
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We report a Raman scattering investigation of columnar BiFeO3-CoFe2O4 (BFO-CFO) epitaxial thin film nanostructures, where BFO pillars are embedded in a CFO matrix. The feasibility of a strain analysis is illustrated through an investigation of two nanostructures with different BFO-CFO ratios. We show that the CFO matrix presents the same strain state in both nanostructures, while the strain state of the BFO pillars depends on the BFO/CFO ratio with an increasing tensile strain along the out-of-plane direction with decreasing BFO content. Our results demonstrate that Raman scattering allows monitoring strain states in complex 3D multiferroic pillar/matrix composites.
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Submitted 23 July, 2011;
originally announced July 2011.
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Raman scattering of perovskite SmScO3 and NdScO3 single crystals
Authors:
O. Chaix-Pluchery,
J. Kreisel
Abstract:
We report an investigation of perovskite-type SmScO3 and NdScO3 single crystals by Raman scattering in various scattering configurations and at different wavelengths. The reported Raman spectra, together with the phonon mode assignment, set the basis for the use of Raman scattering for the structural investigation of RE-scandates. Further to the phonon signature, a fluorescence signal is observed…
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We report an investigation of perovskite-type SmScO3 and NdScO3 single crystals by Raman scattering in various scattering configurations and at different wavelengths. The reported Raman spectra, together with the phonon mode assignment, set the basis for the use of Raman scattering for the structural investigation of RE-scandates. Further to the phonon signature, a fluorescence signal is observed for both scandates and is particularly intense for NdScO3 when using a 488 or 514 nm excitation line. A comparison of Raman spectra of RE-scandates with literature Raman data on orthorhombic perovskites shows that the frequency of particular modes scales with the orthorhombic distortion in terms of the rotation (or tilt) angle of the ScO6 octahedra
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Submitted 24 May, 2010;
originally announced May 2010.
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Temperature-dependent Raman scattering of DyScO3 and GdScO3 single crystals
Authors:
O. Chaix-Pluchery,
D. Sauer,
J. Kreisel
Abstract:
We report a temperature-dependent Raman scattering investigation of DyScO3 and GdScO3 single crystals from room temperature up to 1200 °C. With increasing temperature, all modes decrease monotonously in wavenumber without anomaly, which attests the absence of a structural phase transition. The high temperature spectral signature and extrapolation of band positions to higher temperatures suggest a…
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We report a temperature-dependent Raman scattering investigation of DyScO3 and GdScO3 single crystals from room temperature up to 1200 °C. With increasing temperature, all modes decrease monotonously in wavenumber without anomaly, which attests the absence of a structural phase transition. The high temperature spectral signature and extrapolation of band positions to higher temperatures suggest a decreasing orthorhombic distortion towards the ideal cubic structure. Our study indicates that this orthorhombic-to-cubic phase transition is close to or higher than the melting point of both rare-earth scandates (\approx 2100 °C), which might exclude the possibility of the experimental observation of such a phase transition before melting. The temperature-dependent shift of Raman phonons is also discussed in the context of thermal expansion.
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Submitted 12 April, 2010;
originally announced April 2010.
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Raman scattering of perovskite DyScO3 and GdScO3 single crystals
Authors:
O. Chaix-Pluchery,
J. Kreisel
Abstract:
We report an investigation of DyScO3 and GdScO3 single crystals by Raman scattering in various scattering configurations and at various wavelengths. The Raman spectra are well-defined and the reported spectral signature together with the mode assignment sets the basis for the use of Raman scattering for the investigation of RE-scandates. The observed positions of Raman modes for DyScO3 are for m…
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We report an investigation of DyScO3 and GdScO3 single crystals by Raman scattering in various scattering configurations and at various wavelengths. The Raman spectra are well-defined and the reported spectral signature together with the mode assignment sets the basis for the use of Raman scattering for the investigation of RE-scandates. The observed positions of Raman modes for DyScO3 are for most bands in reasonable agreement with recent theoretical ab initio predictions of the vibrational spectrum for the same material. Further to the phonon signature, a luminescence signal is observed for both scandates. While the luminescence is weak for DyScO3, it is very intense for GdScO3 when using a 488 or 514 nm excitation line, which in turn inhibits full analysis of the phonon spectrum. We show that a meaningful phonon Raman analysis of GdScO3 samples can be done by using a 633 nm excitation.
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Submitted 24 April, 2009;
originally announced April 2009.
