Local energy landscape drives long exciton diffusion in 2D halide perovskite semiconductors
Authors:
Alan Baldwin,
Géraud Delport,
Kai Leng,
Rosemonde Chahbazian,
Krzysztof Galkowski,
Kian Ping Loh,
Samuel D. Stranks
Abstract:
Halide perovskites have emerged as disruptive semiconductors for applications including photovoltaics and light emitting devices, with modular optoelectronic properties realisable through composition and dimensionality tuning. Layered Ruddlesden-Popper perovskites of the form BA2MAn-1PbnI3n+1, where n is the number of lead-halide and methylammonium (MA) sheets spaced by longer butylammonium (BA) c…
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Halide perovskites have emerged as disruptive semiconductors for applications including photovoltaics and light emitting devices, with modular optoelectronic properties realisable through composition and dimensionality tuning. Layered Ruddlesden-Popper perovskites of the form BA2MAn-1PbnI3n+1, where n is the number of lead-halide and methylammonium (MA) sheets spaced by longer butylammonium (BA) cations, are particularly interesting due to their unique two-dimensional character and charge carrier dynamics dominated by strongly bound excitons. However, long-range energy transport through exciton diffusion in these materials is not understood or realised. Here, we employ local time-resolved luminescence mapping techniques to visualise exciton transport in high-quality exfoliated flakes of the BA2MAn-1PbnI3n+1 perovskite family. We uncover two distinct transport regimes, depending on the temperature range studied. At temperatures above 100 K, diffusion is mediated by thermally activated hopping processes between localised states. At lower temperatures, a non-uniform energetic landscape emerges in which exciton transport is dominated by energy funnelling processes to lower energy states, leading to long range transport over hundreds of nanometres even in the absence of exciton-phonon coupling and in the presence of local optoelectronic heterogeneity. Efficient, long-range and switchable excitonic funnelling offers exciting possibilities of controlled directional long-range transport in these 2D materials for new device applications.
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Submitted 29 October, 2020;
originally announced October 2020.
Visualizing buried local carrier diffusion in halide perovskite crystals via two-photon microscopy
Authors:
Camille Stavrakas,
Géraud Delport,
Ayan A. Zhumekenov,
Miguel Anaya,
Rosemonde Chahbazian,
Osman M. Bakr,
Edward S. Barnard,
Samuel D. Stranks
Abstract:
Halide perovskites have shown great potential for light emission and photovoltaic applications due to their remarkable electronic properties and compatibility with cost-effective fabrication techniques. Although the device performances are promising, they are still limited by microscale heterogeneities in their photophysical properties. In particular, the relation between local heterogeneities and…
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Halide perovskites have shown great potential for light emission and photovoltaic applications due to their remarkable electronic properties and compatibility with cost-effective fabrication techniques. Although the device performances are promising, they are still limited by microscale heterogeneities in their photophysical properties. In particular, the relation between local heterogeneities and the diffusion of charge carriers at the surface and in the bulk, crucial for efficient collection of charges in a light harvesting device, is not well understood. Here, a photoluminescence tomography technique is developed in a confocal microscope using one- and two-photon excitation to distinguish between local surface and bulk diffusion of charge carriers in methylammonium lead bromide single crystals. The local temporal diffusion is probed at various excitation depths to build statistics of local electronic diffusion coefficients. The measured values range between 0.3 to 2 $cm^2.s^{-1}$ depending on the local trap density and the morphological environment - a distribution that would be missed from analogous macroscopic or surface-measurements. Tomographic images of carrier diffusion were reconstructed to reveal buried crystal defects that act as barriers to carrier transport. This work reveals a new framework to understand and homogenise diffusion pathways, which are extremely sensitive to local properties and buried defects.
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Submitted 28 September, 2019;
originally announced September 2019.