Showing 1–11 of 11 results for author: Chèze, C

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Authors: Jonas Lähnemann, Vladimir M. Kaganer, Karl K. Sabelfeld, Anastasya E. Kireeva, Uwe Jahn, Caroline Chèze, Raffaella Calarco, Oliver Brandt

Abstract: We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a GaN(0001) layer with a deeply buried (In,Ga)N quantum well. Varying the acceleration voltage of the primary electrons and compari… ▽ More We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well as in the bulk. To this end, we utilize cathodoluminescence imaging of the top surface of a GaN(0001) layer with a deeply buried (In,Ga)N quantum well. Varying the acceleration voltage of the primary electrons and comparing the signal from the layer and the quantum well enables us to probe carrier recombination at depths ranging from the close vicinity of the surface to the position of the quantum well. Our experiments are accompanied by fully three-dimensional Monte Carlo simulations of carrier drift, diffusion, and recombination in the presence of the surface, the quantum well, and the dislocation, taking into account the dislocation strain field and the resulting piezoelectric field at the dislocation outcrop. Near the surface, this field establishes an exciton dead zone around the dislocation, the extent of which is not related to the carrier diffusion length. However, reliable values of the carrier diffusion length can be extracted from the dipole-like energy shift observed in hyperspectral cathodoluminescence maps recorded around the dislocation outcrop at low acceleration voltages. For high acceleration voltages, allowing us to probe a depth where carrier recombination is unaffected by surface effects, we observe a much stronger contrast than expected from the piezoelectric field alone. This finding provides unambiguous experimental evidence for the strong nonradiative activity of edge threading dislocations in bulk GaN and hence also in buried heterostructures. △ Less

Submitted 23 November, 2021; v1 submitted 30 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 17, 024019 (2022)

Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion

Authors: Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann, Timur Flissikowski, Carsten Pfüller, Karl K. Sabelfeld, Anastasya E. Kireeva, Caroline Chèze, Raffaella Calarco, Holger T. Grahn, Uwe Jahn

Abstract: We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatur… ▽ More We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier sink. Monochromatic intensity profiles across the quantum well are recorded for temperatures between 10 and 300 K. A classical diffusion model accounts for the profiles acquired between 120 and 300 K, while for temperatures lower than 120 K, a quantum capture process has to be taken into account in addition. Combining the diffusion length extracted from these profiles and the effective carrier lifetime measured by time-resolved photoluminescence experiments, we deduce the carrier diffusivity as a function of temperature. The experimental values are found to be close to theoretical ones for the ambipolar diffusivity of free carriers limited only by intrinsic phonon scattering. This agreement is shown to be fortuitous. The high diffusivity at low temperatures instead originates from an increasing participation of excitons in the diffusion process. △ Less

Submitted 23 November, 2021; v1 submitted 29 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Applied 17, 024018 (2022)

Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Authors: Erdi Kuşdemir, Caroline Chèze, Raffaella Calarco

Abstract: We present a detailed investigation of the mechanisms at play for the incorporation of In and Mg on the GaN(0001) surface during plasma-assisted molecular beam epitaxy (PAMBE). First, we have studied the kinetics of In desorption in the presence of Mg either without or with N supply from the plasma cell by quadrupole mass spectrometry (QMS) in the line of sight. Second, we have explored the effect… ▽ More We present a detailed investigation of the mechanisms at play for the incorporation of In and Mg on the GaN(0001) surface during plasma-assisted molecular beam epitaxy (PAMBE). First, we have studied the kinetics of In desorption in the presence of Mg either without or with N supply from the plasma cell by quadrupole mass spectrometry (QMS) in the line of sight. Second, we have explored the effect of Mg doping at a different time along the cycle of (InN/GaN) supply repeated 10 times to form (In,Ga)N/GaN superlattices (SLs). By the complementary ex-situ investigation of these SLs by X-ray diffraction (XRD) and secondary ion mass spectrometry (SIMS), we found that in monolayer-thick (In,Ga)N layer, the In content was maximized when Mg was not supplied simultaneously to In, but it drastically decreased otherwise. In contrast, the Mg concentration strongly increased in the (In,Ga)N monolayers compared to the GaN barriers. We attribute this finding to the surfactant effect of In for Mg, which decreases the binding energy of Mg in GaN in presence of N. △ Less

Submitted 25 June, 2020; originally announced June 2020.

Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume

Authors: Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld, Anastasya E. Kireeva, Jonas Lähnemann, Carsten Pfüller, Timur Flissikowski, Caroline Chèze, Klaus Biermann, Raffaella Calarco, Oliver Brandt

Abstract: The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated carriers for sample temperatures between 10 and 300 K, we utilize cathodoluminescence intensity profiles measured across single quantum wells embedded… ▽ More The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of generated carriers for sample temperatures between 10 and 300 K, we utilize cathodoluminescence intensity profiles measured across single quantum wells embedded in thick GaN and GaAs layers. Thin (Al,Ga)N and (Al,Ga)As barriers, respectively, prevent carriers diffusing in the GaN and GaAs layers to reach the well, which would broaden the profiles. The experimental cathodoluminescence profiles are found to be systematically wider than the energy loss distributions calculated by means of the Monte Carlo program CASINO, with the width monotonically increasing with decreasing temperature. This effect is observed for both GaN and GaAs and becomes more pronounced for higher acceleration voltages. We discuss this phenomenon in terms of both, the electron-phonon interaction controlling the energy relaxation of hot carriers, and the shape of the initial carrier distribution. Finally, we present a phenomenological approach to simulate the carrier generation volume that can be used for the investigation of the temperature dependence of carrier diffusion. △ Less

Submitted 23 November, 2021; v1 submitted 20 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. Applied 17, 024017 (2022)

InN and GaN/InN monolayers grown on ZnO {0001}

Authors: Torsten Ernst, Caroline Chèze, Raffaella Calarco

Abstract: Thin InN and GaN/InN films were grown on oxygen-polar (O) (000-1) and zinc-polar (Zn) (0001) zinc oxide (ZnO) by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the growth rate (GR) and the substrate polarity on the growth mode and the surface morphology of InN and GaN/InN was investigated in situ by reflection high-energy electron diffraction (RHEED) and ex situ by atomic force m… ▽ More Thin InN and GaN/InN films were grown on oxygen-polar (O) (000-1) and zinc-polar (Zn) (0001) zinc oxide (ZnO) by plasma-assisted molecular beam epitaxy (PAMBE). The influence of the growth rate (GR) and the substrate polarity on the growth mode and the surface morphology of InN and GaN/InN was investigated in situ by reflection high-energy electron diffraction (RHEED) and ex situ by atomic force microscopy (AFM). During InN deposition, a transition from two dimensional to three dimensional (2D-3D) growth mode is observed in RHEED. The critical thickness for relaxation increases with decreasing GR and varies from 0.6 ML (GR: 1.0 ML/s) to 1.2 MLs (GR: 0.2 ML/s) on O-ZnO and from 1.2 MLs (GR: 0.5 ML/s) to 1.7 MLs (GR: 0.2 ML/s) on Zn-ZnO. The critical thickness for relaxation of GaN on top of 1.2 MLs and 1.5 MLs thick InN is close to zero on O-ZnO and 1.6 MLs on Zn-ZnO, respectively. △ Less

Submitted 29 May, 2018; originally announced May 2018.

Comments: 18 pages, 3 figures, The following article has been submitted to JOURNAL OF APPLIED PHYSICS

Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature

Authors: C. Chèze, F. Feix, J. Lähnemann, T. Flissikowski, O. Brandt, M. Kryśko, P. Wolny, H. Turski, C. Skierbiszewski, O. Brandt

Abstract: N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperatur… ▽ More N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially homogeneous green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Comments: 10 pages, 2 figures, 1 table

MSC Class: 00A79; 74A35

Journal ref: Appl. Phys. Lett. 112, 022102 (2018)

In/GaN(0001)-$\boldsymbol{{\mathsf{\left(\!\sqrt{3}\times\!\sqrt{3}\right)\!R30^{\circ}}}}$ adsorbate structure as a template for embedded (In,Ga)N/GaN monolayers and short-period superlattices

Authors: C. Chèze, F. Feix, M. Anikeeva, T. Schulz, M. Albrecht, H. Riechert, O. Brandt, R. Calarco

Abstract: We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 mo… ▽ More We explore an alternative way to fabricate (In,Ga)N/GaN short-period superlattices on GaN(0001) by plasma-assisted molecular beam epitaxy. We exploit the existence of an In adsorbate structure manifesting itself by a $(\sqrt{3}\times\!\sqrt{3})\text{R}30^{\circ}$ surface reconstruction observed in-situ by reflection high-energy electron diffraction. This In adlayer accommodates a maximum of 1/3 monolayer of In on the GaN surface and, under suitable conditions, can be embedded into GaN to form an In$_{0.33}$Ga$_{0.67}$N quantum sheet whose width is naturally limited to a single monolayer. Periodically inserting these quantum sheets, we synthesize (In,Ga)N/GaN short-period superlattices with abrupt interfaces and high periodicity as demonstrated by x-ray diffractometry and scanning transmission electron microscopy. The embedded quantum sheets are found to consist of single monolayers with an In content of 0.25-0.29. For a barrier thickness of 6 monolayers, the superlattice gives rise to a photoluminescence band at 3.16 eV, close to the theoretically predicted values for these structures. △ Less

Submitted 17 January, 2017; originally announced January 2017.

Comments: 9 pages, 2 figures Submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 110 (2017) 072104

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

Authors: Felix Feix, Timur Flissikowski, Caroline Chèze, Raffaella Calarco, Holger T. Grahn, Oliver Brandt

Abstract: We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power la… ▽ More We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission. We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model. △ Less

Submitted 19 July, 2016; v1 submitted 3 May, 2016; originally announced May 2016.

Comments: 10 pages, 3 figures

Journal ref: Appl. Phys. Lett. 109, 042104 (2016)

Comparison of the luminous efficiency of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells grown by plasma-assisted molecular beam epitaxy

Authors: Sergio Fernández-Garrido, Jonas Lähnemann, Christian Hauswald, Maxim Korytov, Martin Albrecht, Caroline Chèze, Czesław Skierbiszewski, Oliver Brandt

Abstract: We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar counterparts, the N-polar QWs prepared on freestanding GaN do not exhibit any detectable photoluminescence. Theoretical simulations of the band profiles… ▽ More We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar counterparts, the N-polar QWs prepared on freestanding GaN do not exhibit any detectable photoluminescence. Theoretical simulations of the band profiles combined with resonant excitation of the QWs allow us to rule out carrier escape and subsequent surface recombination as the reason for the absence of luminescence. To explore the hypothesis of a high concentration of nonradiative defects at the interfaces between wells and barriers, we analyze Ga- and N-polar QWs prepared on 6H-SiC as a function of the well width. Intense luminescence is observed for both Ga- and N polar samples. As expected, the luminescence of the Ga-polar QWs quenches and red-shifts with increasing well width due to the quantum confined Stark effect. In contrast, both the intensity and the energy of the luminescence from the N-polar samples are essentially independent of well width. Transmission electron microscopy reveals that the N-polar QWs exhibit abrupt interfaces and homogeneous composition, excluding emission from In-rich clusters as the reason for this anomalous behavior. The microscopic origin of the luminescence in the N-polar QWs is elucidated using spatially resolved cathodoluminescence spectroscopy. Regardless of well width, the luminescence is found to not originate from the N-polar QWs, but from the semipolar facets of v-pit defects. These results cast serious doubts on the potential of N-polar QWs grown by plasma-assisted molecular beam epitaxy for the development of long-wavelength light emitting diodes. What remains to be seen is whether unconventional growth conditions may enable a significant reduction in the concentration of nonradiative defects. △ Less

Submitted 22 October, 2015; originally announced October 2015.

Comments: 12 pages, 10 figures

Journal ref: Phys. Rev. Applied 6, 034017 (2016)

Statistical analysis of the shape of one-dimensional nanostructures: determining the coalescence degree of spontaneously formed GaN nanowires

Authors: Oliver Brandt, Sergio Fernández-Garrido, Johannes K. Zettler, Esperanza Luna, Uwe Jahn, Caroline Chèze, Vladimir M. Kaganer

Abstract: Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus formed GaN nanowire ensembles, individual nanowires coalesce with others in their immediate vicinity. This coalescence process may introduce strain and structural defects, foiling the idea of defect-free material due to the… ▽ More Single GaN nanowires formed spontaneously on a given substrate represent nanoscopic single crystals free of any extended defects. However, due to the high area density of thus formed GaN nanowire ensembles, individual nanowires coalesce with others in their immediate vicinity. This coalescence process may introduce strain and structural defects, foiling the idea of defect-free material due to the nanowire geometry. To investigate the consequences of this process, a quantitative measure of the coalescence of nanowire ensembles is required. We derive objective criteria to determine the coalescence degree of GaN nanowire ensembles. These criteria are based on the area-perimeter relationship of the cross-sectional shapes observed, and in particular on their circularity. Employing these criteria, we distinguish single nanowires from coalesced aggregates in an ensemble, determine the diameter distribution of both, and finally analyze the coalescence degree of nanowire ensembles with increasing fill factor. △ Less

Submitted 15 April, 2014; v1 submitted 21 February, 2014; originally announced February 2014.

Journal ref: Cryst. Growth Des. 14, 2246 (2014)

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Authors: Walter M. Weber, Georg S. Duesberg, Andrew P. Graham, Maik Liebau, Eugen Unger, Caroline Cheze, Lutz Geelhaar, Paolo Lugli, Henning Riechert, Franz Kreupl

Abstract: Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field… ▽ More Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 10 to 30 nm thin nominally undoped Si-NWs as the active region. Various silicides were investigated as Schottky-barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p-type behavior. A FET consisting of a single Si-NW with 20 nanometers diameter and 2.5 micrometer gate-length delivers as much as 0.15 microA on-current at 1 volt bias voltage and has an on/off current ratio of 10^7. This is in contrast to recent reports of low conductance in undoped Si. △ Less

Submitted 13 September, 2006; originally announced September 2006.

Comments: accepted for publication in phys. stat. sol. (c)(C) (2006) WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim