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Flopping-mode electron dipole spin resonance in the strong-driving regime
Authors:
Julian D. Teske,
Friederike Butt,
Pascal Cerfontaine,
Guido Burkard,
Hendrik Bluhm
Abstract:
Achieving high fidelity control of spin qubits with conventional electron dipole spin resonance (EDSR) requires large magnetic field gradients of about 1 mT/nm, which also couple the qubit to charge noise, and large drive amplitudes of order 1 mV. The flopping-mode is an alternative method to drive EDSR of an electron in a double quantum dot, where the large displacement between both dots increase…
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Achieving high fidelity control of spin qubits with conventional electron dipole spin resonance (EDSR) requires large magnetic field gradients of about 1 mT/nm, which also couple the qubit to charge noise, and large drive amplitudes of order 1 mV. The flopping-mode is an alternative method to drive EDSR of an electron in a double quantum dot, where the large displacement between both dots increases the driving efficiency. We propose to operate the flopping-mode in the strong-driving regime to use the full magnetic field difference between the two dots. In simulations, the reduced required magnetic field gradients suppress the infidelity contribution of charge noise by more than two orders of magnitude, while providing Rabi frequencies of up to 60 MHz. However, the near degeneracy of the conduction band in silicon introduces a valley degree of freedom that can degrade the performance of the strong-driving mode. This necessitates a valley-dependent pulse optimization and makes operation to the strong-driving regime questionable.
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Submitted 22 August, 2022;
originally announced August 2022.
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Closed-loop control of a GaAs-based singlet-triplet spin qubit with 99.5% gate fidelity and low leakage
Authors:
Pascal Cerfontaine,
Tim Botzem,
Julian Ritzmann,
Simon Sebastian Humpohl,
Arne Ludwig,
Dieter Schuh,
Dominique Bougeard,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses…
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Semiconductor spin qubits have recently seen major advances in coherence time and control fidelities, leading to a single-qubit performance that is on par with other leading qubit platforms. Most of this progress is based on microwave control of single spins in devices made of isotopically purified silicon. For controlling spins, the exchange interaction is an additional key ingredient which poses new challenges for high-fidelity control. Here, we demonstrate exchange-based single-qubit gates of two-electron spin qubits in GaAs double quantum dots. Using careful pulse optimization and closed-loop tuning, we achieve a randomized benchmarking fidelity of $(99.50 \pm 0.04)\%$ and a leakage rate of $0.13\%$ out of the computational subspace. These results open new perspectives for microwave-free control of singlet-triplet qubits in GaAs and other materials.
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Submitted 22 January, 2021; v1 submitted 12 June, 2019;
originally announced June 2019.
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Self-Consistent Calibration of Quantum Gate Sets
Authors:
Pascal Cerfontaine,
René Otten,
Hendrik Bluhm
Abstract:
The precise and automated calibration of quantum gates is a key requirement for building a reliable quantum computer. Unlike errors from decoherence, systematic errors can in principle be completely removed by tuning experimental parameters. Here, we present an iterative calibration routine which can remove systematic gate errors on several qubits. A central ingredient is the construction of pulse…
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The precise and automated calibration of quantum gates is a key requirement for building a reliable quantum computer. Unlike errors from decoherence, systematic errors can in principle be completely removed by tuning experimental parameters. Here, we present an iterative calibration routine which can remove systematic gate errors on several qubits. A central ingredient is the construction of pulse sequences that extract independent indicators for every linearly independent error generator. We show that decoherence errors only moderately degrade the achievable infidelity due to systematic errors. Furthermore, we investigate the convergence properties of our approach by performing simulations for a specific qubit encoded in a pair of spins. Our results indicate that a gate set with 230 gate parameters can be calibrated in about ten iterations, after which incoherent errors limit the gate fidelity.
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Submitted 22 January, 2021; v1 submitted 3 June, 2019;
originally announced June 2019.
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A Machine Learning Approach for Automated Fine-Tuning of Semiconductor Spin Qubits
Authors:
Julian D. Teske,
Simon Humpohl,
René Otten,
Patrick Bethke,
Pascal Cerfontaine,
Jonas Dedden,
Arne Ludwig,
Andreas D. Wieck,
Hendrik Bluhm
Abstract:
While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for quantum computing, one remaining hurdle is the need to tune each of them into a good operating regime by adjusting the voltages applied to electrostatic gates. The automation of these tuning procedures is a necessary requirement for the operation of a quantum processor based on gate-defined quantum…
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While spin qubits based on gate-defined quantum dots have demonstrated very favorable properties for quantum computing, one remaining hurdle is the need to tune each of them into a good operating regime by adjusting the voltages applied to electrostatic gates. The automation of these tuning procedures is a necessary requirement for the operation of a quantum processor based on gate-defined quantum dots, which is yet to be fully addressed. We present an algorithm for the automated fine-tuning of quantum dots, and demonstrate its performance on a semiconductor singlet-triplet qubit in GaAs. The algorithm employs a Kalman filter based on Bayesian statistics to estimate the gradients of the target parameters as function of gate voltages, thus learning the system response. The algorithm's design is focused on the reduction of the number of required measurements. We experimentally demonstrate the ability to change the operation regime of the qubit within 3 to 5 iterations, corresponding to 10 to 15 minutes of lab-time.
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Submitted 8 March, 2019; v1 submitted 7 January, 2019;
originally announced January 2019.
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High-fidelity gate set for exchange-coupled singlet-triplet qubits
Authors:
Pascal Cerfontaine,
René Otten,
M. A. Wolfe,
Patrick Bethke,
Hendrik Bluhm
Abstract:
In order to enable semiconductor-based quantum computing with many qubits, issues like residual interqubit coupling and constraints from scalable control hardware need to be tackled to retain the high gate fidelities demonstrated in current single-qubit devices. Here, we focus on two exchange-coupled singlet-triplet spin qubits, considering realistic control hardware as well as Coulomb and exchang…
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In order to enable semiconductor-based quantum computing with many qubits, issues like residual interqubit coupling and constraints from scalable control hardware need to be tackled to retain the high gate fidelities demonstrated in current single-qubit devices. Here, we focus on two exchange-coupled singlet-triplet spin qubits, considering realistic control hardware as well as Coulomb and exchange coupling that cannot be fully turned off. Using measured noise spectra, we optimize realistic control pulses and show that two-qubit (single-qubit) gate fidelities of 99.90\% ($\ge 99.69\%$) can be reached in GaAs, while 99.99\% ($\ge 99.95\%$) can be achieved in Si.
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Submitted 22 January, 2021; v1 submitted 3 January, 2019;
originally announced January 2019.
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Transfer of a quantum state from a photonic qubit to a gate-defined quantum dot
Authors:
Benjamin Joecker,
Pascal Cerfontaine,
Federica Haupt,
Lars R. Schreiber,
Beata E. Kardynał,
Hendrik Bluhm
Abstract:
Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the state of a photonic qubit to a single-spin and to a two-spin qubit hosted in gate-defined quantum dots (GDQD). Both protocols are based on using a localized ex…
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Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the state of a photonic qubit to a single-spin and to a two-spin qubit hosted in gate-defined quantum dots (GDQD). Both protocols are based on using a localized exciton as intermediary between the photonic and the spin qubit. We use effective Hamiltonian models to describe the hybrid systems formed by the the exciton and the GDQDs and apply simple but realistic noise models to analyze the viability of the proposed protocols. Using realistic parameters, we find that the protocols can be completed with a success probability ranging between 85-97%.
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Submitted 16 December, 2018;
originally announced December 2018.
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Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems
Authors:
Jan Klos,
Fabian Hassler,
Pascal Cerfontaine,
Hendrik Bluhm,
Lars R. Schreiber
Abstract:
Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initialization bandwidth for energy-resolved spin-to-charge conversion and is essential to tune single-electron transistors commonly used as charge detecto…
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Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initialization bandwidth for energy-resolved spin-to-charge conversion and is essential to tune single-electron transistors commonly used as charge detectors. Potential disorder and the increasing complexity of the two-dimensional gate-defined quantum computing devices sets high demands on the gate design and the voltage tuning of the tunnel barriers. We present a Green's formalism approach for the calculation of tunnel-couplings between a quantum dot and a reservoir. Our method takes into account in full detail the two-dimensional electrostatic potential of the quantum dot, the tunnel barrier and reservoir. A Markov approximation is only employed far away from the tunnel barrier region where the density of states is sufficiently large. We calculate the tunnel-coupling including potential disorder effects, which become increasingly important for large-scale silicon-based spin-qubit devices. Studying the tunnel-couplings of a single-electron transistor in Si/SiGe as a showcase, we find that charged defects are the dominant source of disorder leading to variations in the tunnel-coupling of four orders of magnitude.
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Submitted 4 May, 2018;
originally announced May 2018.
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Tuning methods for semiconductor spin--qubits
Authors:
Tim Botzem,
Michael D. Shulman,
Sandra Foletti,
Shannon P. Harvey,
Oliver E. Dial,
Patrick Bethke,
Pascal Cerfontaine,
Robert P. G. McNeil,
Diana Mahalu,
Vladimir Umansky,
Arne Ludwig,
Andreas Wieck,
Dieter Schuh,
Dominique Bougeard,
Amir Yacoby,
Hendrik Bluhm
Abstract:
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to t…
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We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to other quantum-dot-like qubit systems. These tuning procedures include the characterization of the inter-dot tunnel coupling, the tunnel coupling to the surrounding leads and the identification of the various fast initialization points for the operation of the qubit. Since semiconductor-based spin qubits are compatible with standard semiconductor process technology and hence promise good prospects of scalability, the challenge of efficiently tuning the dot's parameters will only grow in the near future, once the multi-qubit stage is reached. With the anticipation of being used as the basis for future automated tuning protocols, all measurements presented here are fast-to-execute and easy-to-analyze characterization methods. They result in quantitative measures of the relevant qubit parameters within a couple of seconds, and require almost no human interference.
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Submitted 11 January, 2018;
originally announced January 2018.
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Feedback-tuned noise-resilient gates for encoded spin qubits
Authors:
Pascal Cerfontaine,
Tim Botzem,
Simon Sebastian Humpohl,
Dieter Schuh,
Dominique Bougeard,
Hendrik Bluhm
Abstract:
Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace…
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Two level quantum mechanical systems like spin 1/2 particles lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins reduces the resources necessary for qubit control and can protect from decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Here, we realize high-fidelity single qubit operations for a qubit encoded in two electron spins in GaAs quantum dots by iterative tuning of the all-electrical control pulses. Using randomized benchmarking, we find an average gate fidelity of $\mathcal{F} = (98.5 \pm 0.1)\,\%$ and determine the leakage rate between the computational subspace and other states to $\mathcal{L} = (0.4\pm0.1)\,\%$. These results also demonstrate that high fidelity gates can be realized even in the presence of nuclear spins as in III-V semiconductors.
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Submitted 6 June, 2016;
originally announced June 2016.
