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Highly efficient field-free switching by orbital Hall torque in a MoS2-based device operating at room temperature
Authors:
Antonio Bianco,
Michele Ceccardi,
Raimondo Cecchini,
Daniele Marre',
Chanchal K. Barman,
Fabio Bernardini,
Alessio Filippetti,
Federico Caglieris,
Ilaria Pallecchi
Abstract:
Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In this work, we propose a novel memory device based on the semiconducting two-dimensional centrosymmetric transition metal dichalcogenide (TMD) MoS2, that operat…
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Charge-to-spin and spin-to-charge conversion mechanisms in high spin-orbit materials are the new frontier of memory devices. They operate via spin-orbit torque (SOT) switching of a magnetic electrode, driven by an applied charge current. In this work, we propose a novel memory device based on the semiconducting two-dimensional centrosymmetric transition metal dichalcogenide (TMD) MoS2, that operates as a SOT device in the writing process and a spin valve in the reading process. We demonstrate that stable voltage states at room temperature can be deterministically controlled by a switching current density as low as 3.2x10^4 A/cm^2 even in zero field, owed to a tilted geometry and a differential voltage architecture. An applied field of 50-100 Oe can be used as a characterizing control parameter for the state switching. Ab initio calculations of spin Hall effect (SHE) and orbital Hall effect (OHE) point to the latter as the most likely responsible for the generation of the SOT in the magnetic electrode. The large value of OHC in bulk MoS2 makes our device competitive in terms of energetic efficiency and could be integrated in TMD heterostructures to design memory devices with multiple magnetization states for non-Boolean computation.
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Submitted 10 April, 2025; v1 submitted 12 February, 2025;
originally announced February 2025.
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Tailoring the Dimensionality of Tellurium Nanostructures via Vapor Transport Growth
Authors:
Sara Ghomi,
Pinaka Pani Tummala,
Raimondo Cecchini,
Carlo S. Casari,
Alessio Lamperti,
Carlo Grazianetti,
Christian Martella,
Alessandro Molle
Abstract:
The interest in tellurium nanostructures is on the rise due to their outstanding physical properties including high carrier mobility, anisotropic charge conduction, photoconductivity, thermoelectricity, and piezoelectricity. Applications in related technologies require tailoring the synthesis of tellurium from its preferred vertical growth toward the lateral growth. Here, the synthesis of pillar-l…
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The interest in tellurium nanostructures is on the rise due to their outstanding physical properties including high carrier mobility, anisotropic charge conduction, photoconductivity, thermoelectricity, and piezoelectricity. Applications in related technologies require tailoring the synthesis of tellurium from its preferred vertical growth toward the lateral growth. Here, the synthesis of pillar-like and pennette-like structures of tellurium through a powder vapor deposition technique has been discussed. It has been shown that exploiting salt additives such as NaCl in vapor deposition technique can enhance tellurium pillar dimensionality toward large planar grains. Further, we report on the synthesis of hexagonal ultrathin tellurium nanoflakes, namely tellurene, from few-layer to monolayer thickness by optimizing the growth kinetics without the usage of any additives. In addition, we explore the surface quality and physical properties of as-grown two-dimensional (2D) tellurium, using a variety of characterization techniques, including Raman spectroscopy, scanning electron microscopy, atomic force microscopy, and Kelvin probe force microscopy. This study provides a pivotal scheme for enabling scalable 2D tellurium integration in numerous potential applications for electronics and optoelectronic devices.
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Submitted 18 September, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Fabrication of nanopatterned metal layers on silicon by nanoindentation / nanoscratching and electrodeposition
Authors:
R. Cecchini,
A. Fabrizi,
C. Paternoster,
W. Zhang,
G. Roventi
Abstract:
The present work illustrates a novel approach for the maskless and resistless fabrication of nanopatterned metal layers on Si substrates, based on the combination of nanomechanical surface modification techniques (such as nanoindentation and nanoscratching) and electrodeposition. Single crystal (100) n-doped Si substrates were first cleaned from native oxide. Nanoindentation and nanoscratching wer…
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The present work illustrates a novel approach for the maskless and resistless fabrication of nanopatterned metal layers on Si substrates, based on the combination of nanomechanical surface modification techniques (such as nanoindentation and nanoscratching) and electrodeposition. Single crystal (100) n-doped Si substrates were first cleaned from native oxide. Nanoindentation and nanoscratching were then used to locally change the substrate microstructure and create regions with reduced electrical conductivity. The substrates were finally mounted as cathode electrodes in a three electrode electrochemical cell to potentiostatically deposit a Ni layer. Electrodeposition was prevented in regions with modified microstructure, enabling the formation of a patterned Ni layer. The fabrication of several patterns including continuous Ni lines of 200 nm width and several microns length was obtained.
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Submitted 15 July, 2023;
originally announced July 2023.
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Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Authors:
Raimondo Cecchini,
Christian Martella,
Claudia Wiemer,
Alessio Lamperti,
Alberto Debernardi,
Lucia Nasi,
Laura Lazzarini,
Alessandro Molle,
Massimo Longo
Abstract:
Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However…
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Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However, the exploitation of monolayer or few-layer antimonene and other 2D materials in novel opto-electronic devices is still hurdled by the lack of scalable processes. Here, we demonstrated the viability of a bottom-up process for the epitaxial growth of antimonene-like nanocrystals (ANCs), based on a Metal-Organic Chemical Vapor Deposition (MOCVD) process, assisted by gold nanoparticles (Au NPs) on commensurate (111)-terminated Ge surfaces. The growth mechanism was investigated by large- and local-area microstructural analysis, revealing that the etching of germanium, catalyzed by the Au NPs, led to the ANCs growth on the exposed Ge (111) planes. As a supportive picture, ab-initio calculations rationalized this epitaxial relationship in terms of compressively strained \b{eta}-phase ANCs. Our process could pave the way to the realization of large-area antimonene layers by a deposition process compatible with the current semiconductor manufacturing technology.
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Submitted 15 July, 2023;
originally announced July 2023.
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Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon
Authors:
Emanuele Longo,
Matteo Belli,
Mario Alia,
Martino Rimoldi,
Raimondo Cecchini,
Massimo Longo,
Claudia Wiemer,
Lorenzo Locatelli,
Gianluca Gubbiotti,
Marco Fanciulli,
Roberto Mantovan
Abstract:
Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2T…
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Spin-charge interconversion phenomena at the interface between magnetic materials and topological insulators (TIs) are attracting enormous interest in the research effort towards the development of fast and ultra-low power devices for the future information and communication technology. We report a large spin-to-charge conversion efficiency in Au/Co/Au/Sb2Te3/Si(111) heterostructures based on Sb2Te3 TIs grown by metal organic chemical vapor deposition on 4 inches Si(111) substrates. By conducting room temperature spin pumping ferromagnetic resonance, we measure an inverse Edelstein Effect length λIEE up to 0.75 nm, a record value for 3-dimensional chalcogenide-based TIs heterostructures. Our results open the path toward the use of chemical methods to produce TIs on large area Si substrates and characterized by highly performing spin-charge conversion, thus marking a milestone toward future technology-transfer.
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Submitted 16 April, 2021;
originally announced April 2021.
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Hanle effect missing in a prototypical organic spintronic device
Authors:
Alberto Riminucci,
Mirko Prezioso,
Chiara Pernechele,
Patrizio Graziosi,
Ilaria Bergenti,
Raimondo Cecchini,
Marco Calbucci,
Massimo Solzi,
Alek Dediu
Abstract:
We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed in measurements taken by sweeping a magnetic field at different angles from the plane of the device. As possible explanations we discuss the tilting out of plane of the magnetization o…
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We investigate spin precession (Hanle effect) in the prototypical organic spintronic giant magnetoresistance (GMR) device La0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co. The Hanle effect is not observed in measurements taken by sweeping a magnetic field at different angles from the plane of the device. As possible explanations we discuss the tilting out of plane of the magnetization of the electrodes, exceptionally high mobility or hot spots. Our results call for a greater understanding of spin injection and transport in such devices.
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Submitted 4 December, 2012; v1 submitted 16 November, 2012;
originally announced November 2012.
