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Electron irradiation: from test to material tailoring
Authors:
A. Alessi,
O. Cavani,
R. Grasset,
H. -J. Drouhin,
V. I. Safarov,
M. Konczykowski
Abstract:
In this article, we report some examples of how high-energy electron irradiation can be used as a tool for shaping material properties turning the generation of point-defects into an advantage beyond the presumed degradation of the properties. Such an approach is radically different from what often occurs when irradiation is used as a test for radiation hard materials or devices degradation in har…
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In this article, we report some examples of how high-energy electron irradiation can be used as a tool for shaping material properties turning the generation of point-defects into an advantage beyond the presumed degradation of the properties. Such an approach is radically different from what often occurs when irradiation is used as a test for radiation hard materials or devices degradation in harsh environments. We illustrate the potential of this emerging technique by results obtained on two families of materials, namely semiconductors and superconductors.
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Submitted 1 September, 2023; v1 submitted 18 April, 2023;
originally announced April 2023.
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Effect of controlled point-like disorder induced by 2.5 MeV electron irradiation on nematic resistivity anisotropy of hole-doped (Ba,K)Fe$_2$As$_2$
Authors:
M. A. Tanatar,
Erik I. Timmons,
M. Ko'nczykowski,
O. Cavani,
Kyuil Cho,
Yong Liu,
T. A. Lograsso,
R. Prozorov
Abstract:
In-plane anisotropy of electrical resistivity was studied in samples of the hole-doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ in the composition range $0.21 \leq x \leq 0.26$ where anisotropy changes sign. Low-temperature ($\sim$20~K) irradiation with relativistic 2.5 MeV electrons was used to control the level of disorder and residual resistivity of the samples. Modification of the stress-detwinning techniq…
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In-plane anisotropy of electrical resistivity was studied in samples of the hole-doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ in the composition range $0.21 \leq x \leq 0.26$ where anisotropy changes sign. Low-temperature ($\sim$20~K) irradiation with relativistic 2.5 MeV electrons was used to control the level of disorder and residual resistivity of the samples. Modification of the stress-detwinning technique enabled measurements of the same samples before and after irradiation, leading to conclusion of anisotropic character of predominantly inelastic scattering processes. Our main finding is that the resistivity anisotropy is of the same sign irrespective of residual resistivity, and remains the same in the orthorhombic $C_2$ phase above the re-entrant tetragonal transition. Unusual $T$-linear dependence of the anisotropy $Δρ\equiv ρ_a(T)-ρ_b(T)$ is found in pristine samples with $x=$0.213 and $x=$0.219, without similar signatures in either $ρ_a(T)$ or $ρ_b(T)$. We show that this feature can be reproduced by a phenomenological model of R.~M.~Fernandes {\it et al.} Phys. Rev. Lett. {\bf 107},217002 (2011). We speculate that onset of fluctuations of nematic order on approaching the instability towards the re-entrant tetragonal phase contributes to this unusual dependence.
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Submitted 14 September, 2020;
originally announced September 2020.
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Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics
Authors:
C. Weiss,
S. Park,
J. Lefèvre,
B. Boizot,
C. Mohr,
O. Cavani,
S. Picard,
R. Kurstjens,
T. Niewelt,
S. Janz
Abstract:
We report on the effect of electron and proton irradiation on effective minority carrier lifetimes ($τ_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay ($μ$W-PCD) method. We examine the dependence of $τ_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured $τ_{eff}$ before and a…
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We report on the effect of electron and proton irradiation on effective minority carrier lifetimes ($τ_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay ($μ$W-PCD) method. We examine the dependence of $τ_{eff}$ on the p-type doping level and on electron and proton radiation fluences at 1 MeV. The measured $τ_{eff}$ before and after irradiation are used to estimate the minority carriers diffusion lengths, which is an important parameter for solar cell operation. We observe $τ_{eff}$ ranging from 50 to 230 $μ$s for Ge doping levels between 1E17 and 1E16 at.cm$^{-3}$, corresponding to diffusion lengths of 500-1400 $μ$m. A separation of $τ_{eff}$ in Ge bulk lifetime and surface recombination velocity is conducted by irradiating Ge lifetime samples of different thicknesses. The possible radiation-induced defects are discussed on the basis of literature.
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Submitted 15 May, 2020;
originally announced May 2020.
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Electron irradiation effects on superconductivity in PdTe$_2$: an application of a generalized Anderson theorem
Authors:
E. I. Timmons,
S. Teknowijoyo,
M. Kończykowski,
O. Cavani,
M. A. Tanatar,
Sunil Ghimire,
Kyuil Cho,
Yongbin Lee,
Liqin Ke,
Na Hyun Jo,
S. L. Bud'ko,
P. C. Canfield,
Peter P. Orth,
Mathias S. Scheurer,
R. Prozorov
Abstract:
Low temperature ($\sim$ 20~K) electron irradiation with 2.5 MeV relativistic electrons was used to study the effect of controlled non-magnetic disorder on the normal and superconducting properties of the type-II Dirac semimetal PdTe$_2$. We report measurements of longitudinal and Hall resistivity, thermal conductivity and London penetration depth using tunnel-diode resonator technique for various…
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Low temperature ($\sim$ 20~K) electron irradiation with 2.5 MeV relativistic electrons was used to study the effect of controlled non-magnetic disorder on the normal and superconducting properties of the type-II Dirac semimetal PdTe$_2$. We report measurements of longitudinal and Hall resistivity, thermal conductivity and London penetration depth using tunnel-diode resonator technique for various irradiation doses. The normal state electrical resistivity follows Matthiessen rule with an increase of the residual resistivity at a rate of $\sim$0.77$ μΩ$cm/$(\textrm{C}/\textrm{cm}^2)$. London penetration depth and thermal conductivity results show that the superconducting state remains fully gapped. The superconducting transition temperature is suppressed at a non-zero rate that is about sixteen times slower than described by the Abrikosov-Gor'kov dependence, applicable to magnetic impurity scattering in isotropic, single-band $s$-wave superconductors. To gain information about the gap structure and symmetry of the pairing state, we perform a detailed analysis of these experimental results based on insight from a generalized Anderson theorem for multi-band superconductors. This imposes quantitative constraints on the gap anisotropies for each of the possible pairing candidate states. We conclude that the most likely pairing candidate is an unconventional $A_{1g}^{+-}$ state. While we cannot exclude the conventional $A_{1g}^{++}$ and the triplet $A_{1u}$, we demonstrate that these states require additional assumptions about the orbital structure of the disorder potential to be consistent with our experimental results, e.g., a ratio of inter- to intra-band scattering for the singlet state significantly larger than one. Due to the generality of our theoretical framework, we think that it will also be useful for irradiation studies in other spin-orbit-coupled multi-orbital systems.
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Submitted 14 January, 2020;
originally announced January 2020.
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Competition between orthorhombic and re-entrant tetragonal phases in underdoped Ba$_{1-x}$K$_x$Fe$_2$As$_2$ probed by the response to controlled disorder
Authors:
E. I. Timmons,
M. A. Tanatar,
K. Willa,
S. Teknowijoyo,
K. Cho,
M. Konczykowski,
O. Cavani,
Y. Liu,
T. A. Lograsso,
U. Welp,
R. Prozorov
Abstract:
Low-temperature (22~K) irradiation with 2.5~MeV electrons was used to study the competition between stripe ${\rm C_2}$ and tetragonal ${\rm C_4}$ antiferromagnetic phases which exist in a narrow doping range around $x=$0.25 in hole-doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$. In nearby compositions outside of this range, at $x=$0.22 and $x=$0.19, the temperatures of both the concomitant orthorhombic/stripe…
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Low-temperature (22~K) irradiation with 2.5~MeV electrons was used to study the competition between stripe ${\rm C_2}$ and tetragonal ${\rm C_4}$ antiferromagnetic phases which exist in a narrow doping range around $x=$0.25 in hole-doped Ba$_{1-x}$K$_x$Fe$_2$As$_2$. In nearby compositions outside of this range, at $x=$0.22 and $x=$0.19, the temperatures of both the concomitant orthorhombic/stripe antiferromagnetic transition $T_{\rm C2}$ and the superconducting transition $T_{\rm c}$ are monotonically suppressed by added disorder at similar rates of about 0.1~K/$μΩ$cm, as revealed through using resistivity variation as an intrinsic measure of scattering rate. In a stark contrast, a rapid suppression of the ${\rm C_4}$ phase at the rate of 0.24 K/$μΩ\cdot$cm is found at $x=$0.25. Moreover, this suppression of the ${\rm C_4}$ phase is accompanied by unusual disorder-induced stabilization of the ${\rm C_2}$ phase, determined by resistivity and specific heat measurements. The rate of the ${\rm C_4}$ phase suppression is notably higher than the suppression rate of the spin-vortex phase in the Ni-doped CaKFe$_4$As$_4$ (0.16 K/$μΩ$cm).
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Submitted 19 October, 2018;
originally announced October 2018.
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Enhancement of Tc by point-like disorder and anisotropic gap in FeSe
Authors:
S. Teknowijoyo,
K. Cho,
M. A. Tanatar,
J. Gonzales,
A. E. Böhmer,
O. Cavani,
V. Mishra,
P. J. Hirschfeld,
S. L. Bud'ko,
P. C. Canfield,
R. Prozorov
Abstract:
A highly anisotropic superconducting gap is found in single crystals of FeSe by studying the London penetration depth, $Δλ$, measured down to 50 mK in samples before and after 2.5 MeV electron irradiation. The gap minimum increases with introduced point - like disorder, indicating the absence of symmetry - imposed nodes. Surprisingly, the superconducting transition temperature, $T_c$, \textit{incr…
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A highly anisotropic superconducting gap is found in single crystals of FeSe by studying the London penetration depth, $Δλ$, measured down to 50 mK in samples before and after 2.5 MeV electron irradiation. The gap minimum increases with introduced point - like disorder, indicating the absence of symmetry - imposed nodes. Surprisingly, the superconducting transition temperature, $T_c$, \textit{increases} by 0.4 K from $T_{c0} \approx$ 8.8 K while the structural transition temperature, $T_s$, \textit{decreases} by 0.9 K from $T_{s0} \approx$91.2 K after electron irradiation. We discuss several explanations for the $T_c$ enhancement, and propose that local strengthening of the pair interaction by irradiation-induced Frenkel defects most likely explains the phenomenon.
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Submitted 13 May, 2016;
originally announced May 2016.
