Investigation of Low Frequency Noise in CryoCMOS devices through Statistical Single Defect Spectroscopy
Authors:
Edoardo Catapano,
Anirudh Varanasi,
Philippe Roussel,
Robin Degraeve,
Yusuke Higashi,
Ruben Asanovski,
Ben Kaczer,
Javier Diaz Fortuny,
Michael Waltl,
Valeri Afanasiev,
Kristiaan De Greve,
Alexander Grill
Abstract:
High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide defects are expected to freeze out at cryogenic temperatures. Nevertheless, it has been repeatedly observed that 1/f noise deviates from the predicted behaviour a…
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High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide defects are expected to freeze out at cryogenic temperatures. Nevertheless, it has been repeatedly observed that 1/f noise deviates from the predicted behaviour and that gate oxide defects are still active around 4.2 K, producing random telegraph noise. In this paper, we probe single gate oxide defects in 2500 nMOS devices down to 5 K in order to investigate the origin of 1/f noise in CryoCMOS devices. From our results, it is clear that the number of defects active at cryogenic temperatures resulting in random telegraph noise is larger than at 300 K. Threshold voltage shifts due to charged defects are shown to be exponentially distributed, with different modalities across temperatures and biases: from monomodal at 300 K to trimodal below 100 K. The third mode is interpreted in the framework of percolation theory. By fitting these distributions, it is shown that more than 80% of the detected defects belongs to the oxide bulk. Afterwards, starting from the raw data in time domain, we reconstruct the low frequency noise spectra, highlighting the contributions of defects belonging to different branches and, therefore, to different oxide layers. This analysis shows that, although interface traps and large defects associated with the third mode are the main sources of 1/f noise at 5 K, bulk oxide defects still contribute significantly to low-frequency noise at cryogenic temperatures. Finally, we show that defect time constants and step heights are uncorrelated, proving that elastic tunnelling model for charge trapping is not accurate.
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Submitted 6 May, 2025;
originally announced May 2025.
A new FDSOI spin qubit platform with 40nm effective control pitch
Authors:
T. Bédécarrats,
B. Cardoso Paz,
B. Martinez Diaz,
H. Niebojewski,
B. Bertrand1,
N. Rambal,
C. Comboroure,
A. Sarrazin,
F. Boulard,
E. Guyez,
J. -M. Hartmann,
Y. Morand,
A. Magalhaes-Lucas,
E. Nowak,
E. Catapano,
M. Cassé,
M. Urdampilleta,
Y. -M. Niquet,
F. Gaillard,
S. De Franceschi,
T. Meunier,
M. Vinet
Abstract:
Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides…
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Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature.
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Submitted 7 April, 2023;
originally announced April 2023.
