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Ultra-clean assembly of van der Waals heterostructures
Authors:
Wendong Wang,
Nicholas Clark,
Matthew Hamer,
Amy Carl,
Endre Tovari,
Sam Sullivan-Allsop,
Evan Tillotson,
Yunze Gao,
Hugo de Latour,
Francisco Selles,
James Howarth,
Eli G. Castanon,
Mingwei Zhou,
Haoyu Bai,
Xiao Li,
Astrid Weston,
Kenji Watanabe,
Takashi Taniguchi,
Cecilia Mattevi,
Thomas H. Bointon,
Paul V. Wiper,
Andrew J. Strudwick,
Leonid A. Ponomarenko,
Andrey Kretinin,
Sarah J. Haigh
, et al. (2 additional authors not shown)
Abstract:
Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we…
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Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current 2D material (2DM) transfer techniques rely on the use of polymers which limit the cleanliness, ultimate electronic performance, and potential for optoelectronic applications of the heterostructures. In this article, we present a novel polymer-free platform for rapid and facile heterostructure assembly which utilises re-usable flexible silicon nitride membranes. We demonstrate that this allows fast and reproducible production of 2D heterostructures using both exfoliated and CVD-grown materials with perfect interfaces free from interlayer contamination and correspondingly excellent electronic behaviour, limited only by the size and intrinsic quality of the crystals used. Furthermore, removing the need for polymeric carriers allows new possibilities for vdW heterostructure fabrication: assembly at high temperatures up to 600°C, and in different environments including ultra-high vacuum (UHV) and when the materials are fully submerged in liquids. We demonstrate UHV heterostructure assembly for the first time, and show the reliable creation of graphene moiré superlattices with more than an order of magnitude improvement in their structural homogeneity. We believe that broad adaptation of our novel inorganic 2D materials assembly strategy will allow realisation of the full potential of vdW heterostructures as a platform for new physics and advanced optoelectronic technologies.
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Submitted 25 August, 2023;
originally announced August 2023.
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Interfacial ferroelectricity in marginally twisted 2D semiconductors
Authors:
Astrid Weston,
Eli G Castanon,
Vladimir Enaldiev,
Fabio Ferreira,
Shubhadeep Bhattacharjee,
Shuigang Xu,
Hector Corte-Leon,
Zefei Wu,
Nickolas Clark,
Alex Summerfield,
Teruo Hashimoto,
Yunze Gao,
Wendong Wang,
Matthew Hamer,
Harriet Read,
Laura Fumagalli,
Andrey V Kretinin,
Sarah J. Haigh,
Olga Kazakova,
A. K. Geim,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crysta…
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Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.
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Submitted 14 August, 2021;
originally announced August 2021.
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Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
Authors:
Tom Vincent,
Jiayun Liang,
Simrjit Singh,
Eli G. Castanon,
Xiaotian Zhang,
Amber McCreary,
Deep Jariwala,
Olga Kazakova,
Zakaria Y. Al Balushi
Abstract:
The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions and excitons with large, tunable binding energies that al…
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The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions and excitons with large, tunable binding energies that all can be controlled and modulated through electrical means has given rise to many device applications. In addition, these materials exhibit both room-temperature spin and valley polarization, magnetism, superconductivity, piezoelectricity that are intricately dependent on the composition, crystal structure, stacking, twist angle, layer number and phases of these materials. Initial results on graphene exfoliated from single bulk crystals motivated the development of wide-area, high purity synthesis and heterojunctions with atomically clean interfaces. Now by opening this design space to new synthetic two-dimensional materials "beyond graphene", it is possible to explore uncharted opportunities in designing novel heterostructures for electrical tunable devices. To fully reveal the emerging functionalities and opportunities of these atomically thin materials in practical applications, this review highlights several representative and noteworthy research directions in the use of electrical means to tune these aforementioned physical and structural properties, with an emphasis on discussing major applications of beyond graphene 2D materials in tunable devices in the past few years and an outlook of what is to come in the next decade.
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Submitted 25 March, 2021;
originally announced March 2021.
