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Showing 1–28 of 28 results for author: Cassabois, G

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  1. arXiv:2501.03640  [pdf, other

    cond-mat.mtrl-sci

    Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure

    Authors: Z. Mu, J. Fraunié, A. Durand, S. Clément, A. Finco, J. Rouquette, A. Hadj-Azzem, N. Rougemaille, J. Coraux, J. Li, T. Poirier, J. H. Edgar, I. C. Gerber, X. Marie, B. Gil, G. Cassabois, C. Robert, V. Jacques

    Abstract: Pressure is a powerful thermodynamic parameter for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of emerging materials. Here we introduce a method enabling in situ magnetic imaging of van der Waals magnets under high pressure with sub-micron s… ▽ More

    Submitted 7 January, 2025; originally announced January 2025.

    Comments: 10 pages, 5 figures

  2. Growth of hexagonal BN crystals by traveling-solvent floating zone

    Authors: Eli Zoghlin, Juliette Plo, Gaihua Ye, Cynthia Nnokwe, Reina Gomez, Austin Ferrenti, Satya Kushwaha, Rui He, Stephen D. Wilson, Pierre Valvin, Bernard Gil, Guillaume Cassabois, James H. Edgar, Tyrel M. McQueen

    Abstract: Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 - 5 mm with lengths from 2 - 10 mm. Tomography indicat… ▽ More

    Submitted 8 April, 2025; v1 submitted 22 December, 2024; originally announced December 2024.

    Comments: 14 pages, 6 figures + supplementary information. Published in J. Cryst. Growth

    Journal ref: J. Cryst. Growth 661, 128164(2025)

  3. arXiv:2405.20837  [pdf, other

    cond-mat.mtrl-sci

    Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride

    Authors: J. Plo, A. Pershin, S. Li, T. Poirier, E. Janzen, H. Schutte, M. Tian, M. Wynn, S. Bernard, A. Rousseau, A. Ibanez, P. Valvin, W. Desrat, T. Michel, V. Jacques, B. Gil, A. Kaminska, N. Wan, J. H. Edgar, A. Gali, G. Cassabois

    Abstract: Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the deve… ▽ More

    Submitted 31 May, 2024; originally announced May 2024.

  4. arXiv:2404.14155  [pdf, other

    cond-mat.mtrl-sci

    Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride

    Authors: T. Clua-Provost, Z. Mu, A. Durand, C. Schrader, J. Happacher, J. Bocquel, P. Maletinsky, J. Fraunié, X. Marie, C. Robert, G. Seine, E. Janzen, J. H. Edgar, B. Gil, G. Cassabois, V. Jacques

    Abstract: The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing application… ▽ More

    Submitted 22 April, 2024; originally announced April 2024.

    Comments: 11 pages, 9 figures

  5. arXiv:2404.08875  [pdf

    cond-mat.mtrl-sci

    Layer-by-layer connection for large area single crystal boron nitride multilayer films

    Authors: Hui Shi, Mingyuan Wang, Hongying Chen, Adrien Rousseau, Junpeng Shu, Ming Tian, Ruowang Chen, Juliette Plo, Pierre Valvin, Bernard Gil, Jiajie Qi, Qinghe Wang, Kaihui Liu, Mingliang Zhang, Guillaume Cassabois, Di Wu, Neng Wan

    Abstract: Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of th… ▽ More

    Submitted 12 April, 2024; originally announced April 2024.

  6. arXiv:2307.06774  [pdf, other

    quant-ph cond-mat.mtrl-sci

    Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

    Authors: T. Clua-Provost, A. Durand, Z. Mu, T. Rastoin, J. Fraunié, E. Janzen, H. Schutte, J. H. Edgar, G. Seine, A. Claverie, X. Marie, C. Robert, B. Gil, G. Cassabois, V. Jacques

    Abstract: We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results… ▽ More

    Submitted 13 July, 2023; originally announced July 2023.

    Comments: 6 pages, 3 figure

    Journal ref: Phys. Rev. Lett. 131, 126901 (2023)

  7. arXiv:2306.13358  [pdf

    cond-mat.mtrl-sci

    Boron and nitrogen isotope effects on hexagonal boron nitride properties

    Authors: E. Janzen, H. Schutte, J. Plo, A. Rousseau, T. Michel, W. Desrat, P. Valvin, V. Jacques, G. Cassabois, B. Gil, J. H. Edgar

    Abstract: The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifyin… ▽ More

    Submitted 23 June, 2023; originally announced June 2023.

    Comments: 13 pages, 7 figures

  8. arXiv:2305.09952  [pdf

    cond-mat.mtrl-sci

    Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

    Authors: K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, S. F. Chichibu

    Abstract: Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence (PL) spectra. However, direct CL measurements of atomically thin two-dimensional materials, su… ▽ More

    Submitted 17 May, 2023; originally announced May 2023.

    Comments: 7 pages, 3 figures

  9. arXiv:2304.12071  [pdf, other

    quant-ph cond-mat.mtrl-sci

    Optically-active spin defects in few-layer thick hexagonal boron nitride

    Authors: A. Durand, T. Clua-Provost, F. Fabre, P. Kumar, J. Li, J. H. Edgar, P. Udvarhelyi, A. Gali, X. Marie, C. Robert, J. M. Gérard, B. Gil, G. Cassabois, V. Jacques

    Abstract: Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_\text{B}^-$) can be detected optically in the limit of few-atomic-layer thick hBN flake… ▽ More

    Submitted 9 May, 2023; v1 submitted 24 April, 2023; originally announced April 2023.

    Comments: 7 pages, 3 figures

    Journal ref: Phys. Rev. Lett. 131, 116902 (2023)

  10. arXiv:2304.00492  [pdf, other

    quant-ph cond-mat.mtrl-sci physics.atom-ph

    A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields

    Authors: P. Udvarhelyi, T. Clua-Provost, A. Durand, J. Li, J. H. Edgar, B. Gil, G. Cassabois, V. Jacques, A. Gali

    Abstract: The boron-vacancy spin defect ($\text{V}_\text{B}^{-}$) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first principles calculations to determine the coupling of the $\text{V}_\text{B}^{-}$ electronic spin to strain… ▽ More

    Submitted 2 April, 2023; originally announced April 2023.

    Comments: 9 pages, 5 figures

  11. Magnetic imaging with spin defects in hexagonal boron nitride

    Authors: P. Kumar, F. Fabre, A. Durand, T. Clua-Provost, J. Li, J. H. Edgar, N. Rougemaille, J. Coraux, X. Marie, P. Renucci, C. Robert, I. Robert-Philip, B. Gil, G. Cassabois, A. Finco, V. Jacques

    Abstract: Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$,… ▽ More

    Submitted 21 July, 2022; originally announced July 2022.

    Comments: 5 pages, 3 figures, supplemental material as ancillary file

    Journal ref: Phys. Rev. Applied 18, L061002 (2022)

  12. arXiv:2112.10176  [pdf, other

    cond-mat.mtrl-sci quant-ph

    Decoherence of V$_{\rm B}^{-}$ spin defects in monoisotopic hexagonal boron nitride

    Authors: A. Haykal, R. Tanos, N. Minotto, A. Durand, F. Fabre, J. Li, J. H. Edgar, V. Ivady, A. Gali, T. Michel, A. Dréau, B. Gil, G. Cassabois, V. Jacques

    Abstract: Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure… ▽ More

    Submitted 19 December, 2021; originally announced December 2021.

    Comments: 8 pages, 5 figures

    Journal ref: Nature Communications 13, 4347 (2022)

  13. arXiv:2107.07950  [pdf, other

    cond-mat.mes-hall cond-mat.mtrl-sci

    Band gap measurements of monolayer h-BN and insights into carbon-related point defects

    Authors: Ricardo Javier Peña Román, Fábio J R Costa Costa, Alberto Zobelli, Christine Elias, Pierre Valvin, Guillaume Cassabois, Bernard Gil, Alex Summerfield, Tin S Cheng, Christopher J Mellor, Peter H Beton, Sergei V Novikov, Luiz F Zagonel

    Abstract: Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of th… ▽ More

    Submitted 16 July, 2021; originally announced July 2021.

    Comments: 50 Pages, 8 Figures, 100+ references

    Journal ref: 2D Material 8 044001 (2021)

  14. arXiv:2001.02136  [pdf, other

    physics.app-ph cond-mat.mes-hall quant-ph

    Single artificial atoms in silicon emitting at telecom wavelengths

    Authors: W. Redjem, A. Durand, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Yu. Kuznetsov, H. S. Nguyen, S. Cueff, J. -M. Gérard, I. Robert-Philip, B. Gil, D. Caliste, P. Pochet, M. Abbarchi, V. Jacques, A. Dréau, G. Cassabois

    Abstract: Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exch… ▽ More

    Submitted 7 January, 2020; originally announced January 2020.

    Journal ref: Nature Electronics 3, 738-743 (2020)

  15. arXiv:1906.11708  [pdf

    physics.app-ph cond-mat.mes-hall

    InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

    Authors: Ali Jaffal, Walid Redjem, Philippe Regreny, Hai Son Nguyen, Sébastien Cueff, Xavier Letartre, Gilles Patriarche, Emmanuel Rousseau, Guillaume Cassabois, Michel Gendry, Nicolas Chauvin

    Abstract: Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter t… ▽ More

    Submitted 26 November, 2019; v1 submitted 27 June, 2019; originally announced June 2019.

    Journal ref: Nanoscale 11, 21847-21855 (2019)

  16. arXiv:1905.07985  [pdf

    cond-mat.mtrl-sci

    Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure

    Authors: Kamil Koronski, Agata Kaminska, Nikolai D. Zhigadlo, Christine Elias, Guillaume Cassabois, Bernard Gil

    Abstract: The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of level… ▽ More

    Submitted 20 May, 2019; originally announced May 2019.

    Comments: 16 pages, 3 figures

    Journal ref: Superlattices and Microstructures (2019)

  17. arXiv:1806.07105  [pdf

    cond-mat.mtrl-sci

    Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

    Authors: Debora Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Bernard Gil, Alex Summerfield, Peter H. Beton, Sergei V. Novikov, Guillaume Cassabois, Julien E. Rault, Abdelkarim Ouerghi

    Abstract: We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflec… ▽ More

    Submitted 19 June, 2018; originally announced June 2018.

    Comments: 9 pages, 4 figures SI 5 pages 2 figures

    Journal ref: Applied Physics Letters 112, 253102 (2018)

  18. Exciton-phonon interaction in the strong coupling regime in hexagonal boron nitride

    Authors: T. Q. P. Vuong, G. Cassabois, P. Valvin, S. Liu, J. H. Edgar, B. Gil

    Abstract: The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic line has a Lorentzian profile resulting from motional narrowing, with a width increasing linearly with the lattice temperature $T$. In contrast, when the exciton-lattice coupling is strong, the lineshape is Gaussian with… ▽ More

    Submitted 4 May, 2017; originally announced May 2017.

    Comments: submitted

    Journal ref: Phys. Rev. B 95, 201202 (2017)

  19. Efficient single photon emission from a high-purity hexagonal boron nitride crystal

    Authors: L. J. Martínez, T. Pelini, V. Waselowski, J. R. Maze, B. Gil, G. Cassabois, V. Jacques

    Abstract: Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here we study the optical response of a high-purity hBN crystal under green laser illumination. By means of photon correlation measurements, we identify individual de… ▽ More

    Submitted 13 June, 2016; originally announced June 2016.

    Comments: 5 pages, 4 figures

    Journal ref: Phys. Rev. B 94, 121405 (2016)

  20. arXiv:1512.02962  [pdf, ps, other

    cond-mat.mtrl-sci

    Hexagonal boron nitride is an indirect bandgap semiconductor

    Authors: G. Cassabois, P. Valvin, B. Gil

    Abstract: Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this material for deep ultraviolet emission, with an intense emission around 215 nm. In the last few years, hexagonal boron nitride has been raising even more atten… ▽ More

    Submitted 9 December, 2015; originally announced December 2015.

    Comments: To appear in Nature Photonics

  21. Unifying the low-temperature photoluminescence spectra of carbon nanotubes: the role of acoustic phonon confinement

    Authors: Fabien Vialla, Yannick Chassagneux, Robson Ferreira, Cyrielle Roquelet, Carole Diederichs, Guillaume Cassabois, Philippe Roussignol, Jean-Sébastien Lauret, Christophe Voisin

    Abstract: At low temperature the photoluminescence of single-wall carbon nanotubes show a large variety of spectral profiles ranging from ultra narrow lines in suspended nanotubes to broad and asymmetrical line-shapes that puzzle the current interpretation in terms of exciton-phonon coupling. Here, we present a complete set of photoluminescence profiles in matrix embedded nanotubes including unprecedented n… ▽ More

    Submitted 3 June, 2014; originally announced June 2014.

    Journal ref: Phys. Rev. Lett. 113, 057402 (2014)

  22. arXiv:1212.3212  [pdf, ps, other

    cond-mat.mes-hall

    Photo-draining and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

    Authors: Hai Son Nguyen, Gregory Sallen, Marco Abbarchi, Robson Ferreira, Christophe Voisin, Philippe Roussignol, Guillaume Cassabois, Carole Diederichs

    Abstract: We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral exciton is blocked. The influence of the residual doping on the initial quantum dots charge state is analyzed, and the resonant emission quenching is interprete… ▽ More

    Submitted 8 February, 2013; v1 submitted 13 December, 2012; originally announced December 2012.

  23. arXiv:1111.1621  [pdf, ps, other

    cond-mat.mes-hall

    Ultra-coherent single photon source

    Authors: Hai Son Nguyen, Gregory Sallen, Christophe Voisin, Philippe Roussignol, Carole Diederichs, Guillaume Cassabois

    Abstract: We present a novel type of single photon source in solid state, based on the coherent laser light scattering by a single InAs quantum dot. We demonstrate that the coherence of the emitted single photons is tailored by the resonant excitation with a spectral linewidth below the radiative limit. Our ultra-coherent source opens the way for integrated quantum devices dedicated to the generation of sin… ▽ More

    Submitted 7 November, 2011; originally announced November 2011.

  24. arXiv:1109.4304  [pdf, ps, other

    cond-mat.mes-hall

    Optically-gated resonant emission in single quantum dots

    Authors: Hai Son Nguyen, Gregory Sallen, Christophe Voisin, Philippe Roussignol, Carole Diederichs, Guillaume Cassabois

    Abstract: We report on the resonant emission in coherently-driven single semiconductor quantum dots. We demonstrate that an ultra-weak non-resonant laser acts as an optical gate for the quantum dot resonant response. We show that the gate laser suppresses Coulomb blockade at the origin of a resonant emission quenching, and that the optically-gated quantum dots systematically behave as ideal two-level system… ▽ More

    Submitted 20 September, 2011; originally announced September 2011.

  25. Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes

    Authors: S. Berger, C. Voisin, G. Cassabois, C. Delalande, Philippe Roussignol, X. Marie

    Abstract: We study the excitonic recombination dynamics in an ensemble of (9,4) semiconducting single-wall carbon nanotubes by high sensitivity time-resolved photo-luminescence experiments. Measurements from cryogenic to room temperature allow us to identify two main contributions to the recombination dynamics. The initial fast decay is temperature independent and is attributed to the presence of small re… ▽ More

    Submitted 8 January, 2007; originally announced January 2007.

    Journal ref: Nanoletters (2007) 8

  26. Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot

    Authors: Alice Berthelot, Ivan Favero, Guillaume Cassabois, Christophe Voisin, Claude Delalande, Philippe Roussignol, Robson Ferreira, Jean-Michel Gérard

    Abstract: Motional narrowing refers to the striking phenomenon where the resonance line of a system coupled to a reservoir becomes narrower when increasing the reservoir fluctuation. A textbook example is found in nuclear magnetic resonance, where the fluctuating local magnetic fields created by randomly oriented nuclear spins are averaged when the motion of the nuclei is thermally activated. The existenc… ▽ More

    Submitted 12 October, 2006; originally announced October 2006.

    Journal ref: Nature Physics (08/10/2006) ?

  27. Fast exciton spin relaxation in single quantum dots

    Authors: I. Favero, Guillaume Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, R. Ferreira, C. Couteau, J. P. Poizat, J. M. Gérard

    Abstract: Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal emitted by isolated quantum dots under steady-state or pulsed non-resonant excitation. We find that the longitudinal exciton spin relaxation time is strikingly sh… ▽ More

    Submitted 9 May, 2005; originally announced May 2005.

  28. Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble

    Authors: I. Favero, Guillaume Cassabois, A. Jankovic, R. Ferreira, D. Darson, C. Voisin, C. Delalande, Ph. Roussignol, A. Badolato, P. M. Petroff, J. M. Gerard

    Abstract: We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another, in sign and in magnitude with absolute values up to 82%. Systematic measurements on hundreds of quantum dots coming from two different laboratories demonstrat… ▽ More

    Submitted 18 November, 2004; originally announced November 2004.

    Comments: submitted to Applied Physics Letters