Showing 1–28 of 28 results for author: Cassabois, G

Magnetic imaging under high pressure with a spin-based quantum sensor integrated in a van der Waals heterostructure

Authors: Z. Mu, J. Fraunié, A. Durand, S. Clément, A. Finco, J. Rouquette, A. Hadj-Azzem, N. Rougemaille, J. Coraux, J. Li, T. Poirier, J. H. Edgar, I. C. Gerber, X. Marie, B. Gil, G. Cassabois, C. Robert, V. Jacques

Abstract: Pressure is a powerful thermodynamic parameter for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of emerging materials. Here we introduce a method enabling in situ magnetic imaging of van der Waals magnets under high pressure with sub-micron s… ▽ More Pressure is a powerful thermodynamic parameter for tuning the magnetic properties of van der Waals magnets owing to their weak interlayer bonding. However, local magnetometry measurements under high pressure still remain elusive for this important class of emerging materials. Here we introduce a method enabling in situ magnetic imaging of van der Waals magnets under high pressure with sub-micron spatial resolution. Our approach relies on a quantum sensing platform based on boron-vacancy (V$_\text{B}^-$) centers in hexagonal boron nitride (hBN), which can be placed in atomic contact of any type of two-dimensional (2D) material within a van der Waals heterostructure. We first show that the V$_\text{B}^-$ center can be used as a magnetic field sensor up to pressures of a few GPa, a pressure range for which the properties of a wide variety of van der Waals magnets are efficiently altered. We then use V$_\text{B}^-$ centers in a thin hBN layer to perform magnetic imaging of a van der Waals magnet under pressure. As a proof of concept, we study the pressure-dependent magnetization in micrometer-sized flakes of $1T$-CrTe$_2$, whose evolution is explained by a shift of the Curie temperature. Besides providing a new path for studying pressure-induced phase transitions in van der Waals magnets, this work also opens up interesting perspectives for exploring the physics of 2D superconductors under pressure via local measurements of the Meissner effect. △ Less

Submitted 7 January, 2025; originally announced January 2025.

Comments: 10 pages, 5 figures

Growth of hexagonal BN crystals by traveling-solvent floating zone

Authors: Eli Zoghlin, Juliette Plo, Gaihua Ye, Cynthia Nnokwe, Reina Gomez, Austin Ferrenti, Satya Kushwaha, Rui He, Stephen D. Wilson, Pierre Valvin, Bernard Gil, Guillaume Cassabois, James H. Edgar, Tyrel M. McQueen

Abstract: Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 - 5 mm with lengths from 2 - 10 mm. Tomography indicat… ▽ More Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography, X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 - 5 mm with lengths from 2 - 10 mm. Tomography indicates variable grain sizes within the boules, with the largest having areas of $\approx$ 1 mm $\times$ 2 mm and thickness $\approx$ 0.5 mm. Although the boules contain macroscale flux inclusions, the h-BN lattice itself is of high quality for samples grown under optimized conditions. The currently optimized growth procedure employs an Fe flux, moderate N$_2$ pressure ($P_{N2} \approx$ 6 bar), and a growth rate of 0.1 mm/h. Raman spectroscopy for an optimized sample gives an average linewidth of 7.7(2) cm$^{-1}$ for the E$_{\mathrm{2g}}$ intralayer mode at 1365.46(4) cm$^{-1}$ and 1.0(1) cm$^{-1}$ for the E$_{\mathrm{2g}}$ interlayer shear mode at 51.78(9) cm$^{-1}$. The corresponding photoluminescence spectrum shows sharp phonon-assisted free exciton peaks and minimal signal in the energy range corresponding to carbon-related defects ($E$ = 3.9 4.1 eV). Our work demonstrates the viability of growing h-BN by the TSFZ technique, thereby opening a new route towards larger, high-quality crystals and advancing the state of h-BN related research. △ Less

Submitted 8 April, 2025; v1 submitted 22 December, 2024; originally announced December 2024.

Comments: 14 pages, 6 figures + supplementary information. Published in J. Cryst. Growth

Journal ref: J. Cryst. Growth 661, 128164(2025)

Isotope substitution and polytype control for point defects identification: the case of the ultraviolet color center in hexagonal boron nitride

Authors: J. Plo, A. Pershin, S. Li, T. Poirier, E. Janzen, H. Schutte, M. Tian, M. Wynn, S. Bernard, A. Rousseau, A. Ibanez, P. Valvin, W. Desrat, T. Michel, V. Jacques, B. Gil, A. Kaminska, N. Wan, J. H. Edgar, A. Gali, G. Cassabois

Abstract: Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the deve… ▽ More Defects in crystals can have a transformative effect on the properties and functionalities of solid-state systems. Dopants in semiconductors are core components in electronic and optoelectronic devices. The control of single color centers is at the basis of advanced applications for quantum technologies. Unintentional defects can also be detrimental to the crystalline structure and hinder the development of novel materials. Whatever the research perspective, the identification of defects is a key but complicated, and often long-standing issue. Here, we present a general methodology to identify point defects by combining isotope substitution and polytype control, with a systematic comparison between experiments and first-principles calculations. We apply this methodology to hexagonal boron nitride (hBN) and its ubiquitous color center emitting in the ultraviolet spectral range. From isotopic purification of the host hBN matrix, a local vibrational mode of the defect is uncovered, and isotope-selective carbon doping proves that this mode belongs to a carbon-based center. Then, by varying the stacking sequence of the host hBN matrix, we unveil different optical responses to hydrostatic pressure for the non-equivalent configurations of this ultraviolet color center. We conclude that this defect is a carbon dimer in the honeycomb lattice of hBN. Our results show that tuning the stacking sequence in different polytypes of a given crystal provides unique fingerprints contributing to the identification of defects in 2D materials. △ Less

Submitted 31 May, 2024; originally announced May 2024.

Spin-dependent photodynamics of boron-vacancy centers in hexagonal boron nitride

Authors: T. Clua-Provost, Z. Mu, A. Durand, C. Schrader, J. Happacher, J. Bocquel, P. Maletinsky, J. Fraunié, X. Marie, C. Robert, G. Seine, E. Janzen, J. H. Edgar, B. Gil, G. Cassabois, V. Jacques

Abstract: The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing application… ▽ More The negatively-charged boron vacancy (V$_\text{B}^-$) center in hexagonal boron nitride (hBN) is currently garnering considerable attention for the design of two-dimensional (2D) quantum sensing units. Such developments require a precise understanding of the spin-dependent optical response of V$_\text{B}^-$ centers, which still remains poorly documented despite its key role for sensing applications. Here we investigate the spin-dependent photodynamics of V$_\text{B}^-$ centers in hBN by a series of time-resolved photoluminescence (PL) measurements. We first introduce a robust all-optical method to infer the spin-dependent lifetime of the excited states and the electron spin polarization of V$_\text{B}^-$ centers under optical pumping. Using these results, we then analyze PL time traces recorded at different optical excitation powers with a seven-level model of the V$_\text{B}^-$ center and we extract all the rates involved in the spin-dependent optical cycles, both under ambient conditions and at liquid helium temperature. These findings are finally used to study the impact of a vector magnetic field on the optical response. More precisely, we analyze PL quenching effects resulting from electron spin mixing induced by the magnetic field component perpendicular to the V$_\text{B}^-$ quantization axis. All experimental results are well reproduced by the seven-level model, illustrating its robustness to describe the spin-dependent photodymanics of V$_\text{B}^-$ centers. This work provides important insights into the properties of V$_\text{B}^-$ centers in hBN, which are valuable for future developments of 2D quantum sensing units. △ Less

Submitted 22 April, 2024; originally announced April 2024.

Comments: 11 pages, 9 figures

Layer-by-layer connection for large area single crystal boron nitride multilayer films

Authors: Hui Shi, Mingyuan Wang, Hongying Chen, Adrien Rousseau, Junpeng Shu, Ming Tian, Ruowang Chen, Juliette Plo, Pierre Valvin, Bernard Gil, Jiajie Qi, Qinghe Wang, Kaihui Liu, Mingliang Zhang, Guillaume Cassabois, Di Wu, Neng Wan

Abstract: Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of th… ▽ More Boron nitride (BN) is today considered as one of the most promising materials for many novel applications including bright single photon emission, deep UV opto-electronics, small sized solid-state neutron detector, and high-performance two-dimensional materials, etc. Despite the recent successful fabrication of large-area BN single-crystals (typically <= 5 atomic layers), the scalable growth of thicker single-crystalline BN films still constitutes a great challenge. In this work, we demonstrate an approach to grow large-area multilayer single-crystal BN films by chemical vapor deposition on face-centered cubic Fe-Ni (111) single crystal alloy thin films with different stoichiometric phases. We show that the BN growth is greatly tunable and improved by increasing the Fe content in single-crystal Fe-Ni (111). The formation of pyramid-shaped multilayer BN domains with aligned orientation enables a continuous connection following a layer-by-layer, 'first-meet-first-connect', mosaic stitching mechanism. By means of selected area electron diffraction, micro-photoluminescence spectroscopy in the deep UV and high-resolution transmission electron microscopy, the layer-by-layer connection mechanism is unambiguously evidenced, and the stacking order has been verified to occur as unidirectional AB and ABC stackings, i.e., in the Bernal and rhombohedral BN phase. △ Less

Submitted 12 April, 2024; originally announced April 2024.

Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

Authors: T. Clua-Provost, A. Durand, Z. Mu, T. Rastoin, J. Fraunié, E. Janzen, H. Schutte, J. H. Edgar, G. Seine, A. Claverie, X. Marie, C. Robert, B. Gil, G. Cassabois, V. Jacques

Abstract: We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results… ▽ More We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results establish isotopically-purified h$^{10}$B$^{15}$N crystals as the optimal host material for future use of V$_\text{B}^-$ spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically-induced polarization of $^{15}$N nuclei in h$^{10}$B$^{15}$N, whose mechanism relies on electron-nuclear spin mixing in the V$_\text{B}^-$ ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform. △ Less

Submitted 13 July, 2023; originally announced July 2023.

Comments: 6 pages, 3 figure

Journal ref: Phys. Rev. Lett. 131, 126901 (2023)

Boron and nitrogen isotope effects on hexagonal boron nitride properties

Authors: E. Janzen, H. Schutte, J. Plo, A. Rousseau, T. Michel, W. Desrat, P. Valvin, V. Jacques, G. Cassabois, B. Gil, J. H. Edgar

Abstract: The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifyin… ▽ More The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelectronic, nanophotonic, and quantum devices. Here we report on the changes in hBN's properties induced by isotopic purification in both boron and nitrogen. Previous studies on isotopically pure hBN have focused on purifying the boron isotope concentration in hBN from its natural concentration (approximately 20 at$\%$ $^{10}$B, 80 at$\%$ $^{11}$B) while using naturally abundant nitrogen (99.6 at$\%$ $^{14}$N, 0.4 at$\%$ $^{15}$N), i.e. almost pure $^{14}$N. In this study, we extend the class of isotopically-purified hBN crystals to $^{15}$N. Crystals in the four configurations, namely h$^{10}$B$^{14}$N, h$^{11}$B$^{14}$N, h$^{10}$B$^{15}$N, and h$^{11}$B$^{15}$N, were grown by the metal flux method using boron and nitrogen single isotope ($>99\%$) enriched sources, with nickel plus chromium as the solvent. In-depth Raman and photoluminescence spectroscopies demonstrate the high quality of the monoisotopic hBN crystals with vibrational and optical properties of the $^{15}$N-purified crystals at the state of the art of currently available $^{14}$N-purified hBN. The growth of high-quality h$^{10}$B$^{14}$N, h$^{11}$B$^{14}$N, h$^{10}$B$^{15}$N, and h$^{11}$B$^{15}$N opens exciting perspectives for thermal conductivity control in heat management, as well as for advanced functionalities in quantum technologies. △ Less

Submitted 23 June, 2023; originally announced June 2023.

Comments: 13 pages, 7 figures

Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride

Authors: K. Shima, T. S. Cheng, C. J. Mellor, P. H. Beton, C. Elias, P. Valvin, B. Gil, G. Cassabois, S. V. Novikov, S. F. Chichibu

Abstract: Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence (PL) spectra. However, direct CL measurements of atomically thin two-dimensional materials, su… ▽ More Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence (PL) spectra. However, direct CL measurements of atomically thin two-dimensional materials, such as transition metal dichalcogenides and hexagonal boron nitride (hBN), have been difficult due to the small excitation volume that interacts with high-energy electron beams (e-beams). Herein, distinct CL signals from a monolayer hBN, namely mBN, epitaxial film grown on a highly oriented pyrolytic graphite substrate are shown by using a home-made CL system capable of large-area and surface-sensitive excitation by an e-beam. The spatially resolved CL spectra at 13 K exhibited a predominant 5.5-eV emission band, which has been ascribed to originate from multilayered aggregates of hBN, markedly at thicker areas formed on the step edges of the substrate. Conversely, a faint peak at 6.04 eV was routinely observed from atomically flat areas. Since the energy agreed with the PL peak of 6.05 eV at 10 K that has been assigned as being due to the recombination of phonon-assisted direct excitons of mBN by Elias et al. [Nat. Commun. 10, 2639 (2019)], the CL peak at 6.04 eV is attributed to originate from the mBN epilayer. The CL results support the transition from indirect bandgap in bulk hBN to direct bandgap in mBN, in analogy with molybdenum disulfide. The results also encourage to elucidate emission properties of other low-dimensional materials with reduced excitation volumes by using the present CL configuration. △ Less

Submitted 17 May, 2023; originally announced May 2023.

Comments: 7 pages, 3 figures

Optically-active spin defects in few-layer thick hexagonal boron nitride

Authors: A. Durand, T. Clua-Provost, F. Fabre, P. Kumar, J. Li, J. H. Edgar, P. Udvarhelyi, A. Gali, X. Marie, C. Robert, J. M. Gérard, B. Gil, G. Cassabois, V. Jacques

Abstract: Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_\text{B}^-$) can be detected optically in the limit of few-atomic-layer thick hBN flake… ▽ More Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to the sample being probed. In this work, we first demonstrate that the electron spin resonance frequencies of boron vacancy centres (V$_\text{B}^-$) can be detected optically in the limit of few-atomic-layer thick hBN flakes despite the nanoscale proximity of the crystal surface that often leads to a degradation of the stability of solid-state spin defects. We then analyze the variations of the electronic spin properties of V$_\text{B}^-$ centres with the hBN thickness with a focus on (i) the zero-field splitting parameters, (ii) the optically-induced spin polarization rate and (iii) the longitudinal spin relaxation time. This work provides important insights into the properties of V$_\text{B}^-$ centres embedded in ultrathin hBN flakes, which are valuable for future developments of foil-based quantum sensing technologies. △ Less

Submitted 9 May, 2023; v1 submitted 24 April, 2023; originally announced April 2023.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. Lett. 131, 116902 (2023)

A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields

Authors: P. Udvarhelyi, T. Clua-Provost, A. Durand, J. Li, J. H. Edgar, B. Gil, G. Cassabois, V. Jacques, A. Gali

Abstract: The boron-vacancy spin defect ($\text{V}_\text{B}^{-}$) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first principles calculations to determine the coupling of the $\text{V}_\text{B}^{-}$ electronic spin to strain… ▽ More The boron-vacancy spin defect ($\text{V}_\text{B}^{-}$) in hexagonal boron nitride (hBN) has a great potential as a quantum sensor in a two-dimensional material that can directly probe various external perturbations in atomic-scale proximity to the quantum sensing layer. Here, we apply first principles calculations to determine the coupling of the $\text{V}_\text{B}^{-}$ electronic spin to strain and electric fields. Our work unravels the interplay between local piezoelectric and elastic effects contributing to the final response to the electric fields. The theoretical predictions are then used to analyse optically detected magnetic resonance (ODMR) spectra recorded on hBN crystals containing different densities of $\text{V}_\text{B}^{-}$ centres. We prove that the orthorhombic zero-field splitting parameter results from local electric fields produced by surrounding charge defects. By providing calculations of the spin-strain and spin-electric field couplings, this work paves the way towards applications of $\text{V}_\text{B}^{-}$ centres for quantitative electric field imaging and quantum sensing under pressure. △ Less

Submitted 2 April, 2023; originally announced April 2023.

Comments: 9 pages, 5 figures

Magnetic imaging with spin defects in hexagonal boron nitride

Authors: P. Kumar, F. Fabre, A. Durand, T. Clua-Provost, J. Li, J. H. Edgar, N. Rougemaille, J. Coraux, X. Marie, P. Renucci, C. Robert, I. Robert-Philip, B. Gil, G. Cassabois, A. Finco, V. Jacques

Abstract: Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$,… ▽ More Optically-active spin defects hosted in hexagonal boron nitride (hBN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with hBN flakes doped with negatively-charged boron-vacancy (V$_{\rm B}^-$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by CrTe$_2$, a van der Waals ferromagnet with a Curie temperature slightly above $300$ K. Compared to other quantum sensors embedded in 3D materials, the advantages of the hBN-based magnetic sensor described in this work are its ease of use, high flexibility and, more importantly, its ability to be placed in close proximity to a target sample. Such a sensing unit will likely find numerous applications in 2D materials research by offering a simple way to probe the physics of van der Waals heterostructures. △ Less

Submitted 21 July, 2022; originally announced July 2022.

Comments: 5 pages, 3 figures, supplemental material as ancillary file

Journal ref: Phys. Rev. Applied 18, L061002 (2022)

Decoherence of V$_{\rm B}^{-}$ spin defects in monoisotopic hexagonal boron nitride

Authors: A. Haykal, R. Tanos, N. Minotto, A. Durand, F. Fabre, J. Li, J. H. Edgar, V. Ivady, A. Gali, T. Michel, A. Dréau, B. Gil, G. Cassabois, V. Jacques

Abstract: Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure… ▽ More Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first unambiguously confirm that it corresponds to the negatively-charged boron-vacancy center (${\rm V}_{\rm B}^-$). We then show that its spin coherence properties are slightly improved in $^{10}$B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using cross-relaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of ${\rm V}_{\rm B}^-$ spin defects, which are valuable for the future development of hBN-based quantum sensing foils. △ Less

Submitted 19 December, 2021; originally announced December 2021.

Comments: 8 pages, 5 figures

Journal ref: Nature Communications 13, 4347 (2022)

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Authors: Ricardo Javier Peña Román, Fábio J R Costa Costa, Alberto Zobelli, Christine Elias, Pierre Valvin, Guillaume Cassabois, Bernard Gil, Alex Summerfield, Tin S Cheng, Christopher J Mellor, Peter H Beton, Sergei V Novikov, Luiz F Zagonel

Abstract: Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of th… ▽ More Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer. Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regions is $(6.8\pm0.2)$ eV. Using optical spectroscopy to obtain the h-BN optical band gap, the exciton binding energy is determined as being of $(0.7\pm0.2)$ eV. In addition, the locally excited cathodoluminescence and photoluminescence show complex spectra that are typically associated to intragap states related to carbon defects. Moreover, in some regions of the monolayer h-BN we identify, using STM, point defects which have intragap electronic levels around 2.0 eV below the Fermi level. △ Less

Submitted 16 July, 2021; originally announced July 2021.

Comments: 50 Pages, 8 Figures, 100+ references

Journal ref: 2D Material 8 044001 (2021)

Single artificial atoms in silicon emitting at telecom wavelengths

Authors: W. Redjem, A. Durand, T. Herzig, A. Benali, S. Pezzagna, J. Meijer, A. Yu. Kuznetsov, H. S. Nguyen, S. Cueff, J. -M. Gérard, I. Robert-Philip, B. Gil, D. Caliste, P. Pochet, M. Abbarchi, V. Jacques, A. Dréau, G. Cassabois

Abstract: Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exch… ▽ More Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms either formed by impurities or quantum dots have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface needed for large-distance exchange of information have not yet been isolated in such a prevailing semiconductor. Here we show the isolation of single optically-active point defects in a commercial silicon-on-insulator wafer implanted with carbon atoms. These artificial atoms exhibit a bright, linearly polarized single-photon emission at telecom wavelengths suitable for long-distance propagation in optical fibers. Our results demonstrate that despite its small bandgap (~ 1.1 eV) a priori unfavorable towards such observation, silicon can accommodate point defects optically isolable at single scale, like in wide-bandgap semiconductors. This work opens numerous perspectives for silicon-based quantum technologies, from integrated quantum photonics to quantum communications and metrology. △ Less

Submitted 7 January, 2020; originally announced January 2020.

Journal ref: Nature Electronics 3, 738-743 (2020)

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Authors: Ali Jaffal, Walid Redjem, Philippe Regreny, Hai Son Nguyen, Sébastien Cueff, Xavier Letartre, Gilles Patriarche, Emmanuel Rousseau, Guillaume Cassabois, Michel Gendry, Nicolas Chauvin

Abstract: Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter t… ▽ More Realizing single photon sources emitting in the telecom band on silicon substrates is essential to reach complementary-metal-oxide-semiconductor (CMOS) compatible devices that secure communications over long distances. In this work, we propose the monolithic growth of needlelike tapered InAs/InP quantum dot-nanowires (QD-NWs) on silicon substrates with a small taper angle and a nanowire diameter tailored to support a single mode waveguide. Such a NW geometry is obtained by a controlled balance over axial and radial growths during the gold-catalyzed growth of the NWs by molecular beam epitaxy. This allows us to investigate the impact of the taper angle on the emission properties of a single InAs/InP QD-NW. At room temperature, a Gaussian far-field emission profile in the telecom O-band with a 30° beam divergence angle is demonstrated from a single InAs QD embedded in a 2° tapered InP NW. Moreover, single photon emission is observed at cryogenic temperature for an off-resonant excitation and the best result, $g^2(0) = 0.05$, is obtained for a 7° tapered NW. This all-encompassing study paves the way for the monolithic growth on silicon of an efficient single photon source in the telecom band based on InAs/InP QD-NWs. △ Less

Submitted 26 November, 2019; v1 submitted 27 June, 2019; originally announced June 2019.

Journal ref: Nanoscale 11, 21847-21855 (2019)

Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure

Authors: Kamil Koronski, Agata Kaminska, Nikolai D. Zhigadlo, Christine Elias, Guillaume Cassabois, Bernard Gil

Abstract: The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of level… ▽ More The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of levels that vary differently under pressure (smaller increase of the emission wavelength compared to the rest of the levels in this energy region or even decrease of it) with pressure. This discovery enriches the physics of the color centers operating in the UV in hBN. △ Less

Submitted 20 May, 2019; originally announced May 2019.

Comments: 16 pages, 3 figures

Journal ref: Superlattices and Microstructures (2019)

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Authors: Debora Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Bernard Gil, Alex Summerfield, Peter H. Beton, Sergei V. Novikov, Guillaume Cassabois, Julien E. Rault, Abdelkarim Ouerghi

Abstract: We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflec… ▽ More We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN. △ Less

Submitted 19 June, 2018; originally announced June 2018.

Comments: 9 pages, 4 figures SI 5 pages 2 figures

Journal ref: Applied Physics Letters 112, 253102 (2018)

Exciton-phonon interaction in the strong coupling regime in hexagonal boron nitride

Authors: T. Q. P. Vuong, G. Cassabois, P. Valvin, S. Liu, J. H. Edgar, B. Gil

Abstract: The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic line has a Lorentzian profile resulting from motional narrowing, with a width increasing linearly with the lattice temperature $T$. In contrast, when the exciton-lattice coupling is strong, the lineshape is Gaussian with… ▽ More The temperature-dependent optical response of excitons in semiconductors is controlled by the exciton-phonon interaction. When the exciton-lattice coupling is weak, the excitonic line has a Lorentzian profile resulting from motional narrowing, with a width increasing linearly with the lattice temperature $T$. In contrast, when the exciton-lattice coupling is strong, the lineshape is Gaussian with a width increasing sublinearly with the lattice temperature, proportional to $\sqrt{T}$. While the former case is commonly reported in the literature, here the latter is reported for the first time, for hexagonal boron nitride. Thus the theoretical predictions of Toyozawa [Progr. Theor. Phys. 20, 53 (1958)] are supported by demonstrating that the exciton-phonon interaction is in the strong coupling regime in this Van der Waals crystal. △ Less

Submitted 4 May, 2017; originally announced May 2017.

Comments: submitted

Journal ref: Phys. Rev. B 95, 201202 (2017)

Efficient single photon emission from a high-purity hexagonal boron nitride crystal

Authors: L. J. Martínez, T. Pelini, V. Waselowski, J. R. Maze, B. Gil, G. Cassabois, V. Jacques

Abstract: Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here we study the optical response of a high-purity hBN crystal under green laser illumination. By means of photon correlation measurements, we identify individual de… ▽ More Among a variety of layered materials used as building blocks in van der Waals heterostructures, hexagonal boron nitride (hBN) appears as an ideal platform for hosting optically-active defects owing to its large bandgap ($\sim 6$ eV). Here we study the optical response of a high-purity hBN crystal under green laser illumination. By means of photon correlation measurements, we identify individual defects emitting a highly photostable fluorescence under ambient conditions. A detailed analysis of the photophysical properties reveals a high quantum efficiency of the radiative transition, leading to a single photon source with very high brightness. These results illustrate how the wide range of applications offered by hBN could be further extended to photonic-based quantum information science and metrology. △ Less

Submitted 13 June, 2016; originally announced June 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 94, 121405 (2016)

Hexagonal boron nitride is an indirect bandgap semiconductor

Authors: G. Cassabois, P. Valvin, B. Gil

Abstract: Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this material for deep ultraviolet emission, with an intense emission around 215 nm. In the last few years, hexagonal boron nitride has been raising even more atten… ▽ More Hexagonal boron nitride is a wide bandgap semiconductor with a very high thermal and chemical stability often used in devices operating under extreme conditions. The growth of high-purity crystals has recently revealed the potential of this material for deep ultraviolet emission, with an intense emission around 215 nm. In the last few years, hexagonal boron nitride has been raising even more attention with the emergence of two-dimensional atomic crystals and Van der Waals heterostructures, initiated with the discovery of graphene. Despite this growing interest and a seemingly simple structure, the basic questions of the bandgap nature and value are still controversial. Here, we resolve this long-debated issue by bringing the evidence for an indirect bandgap at 5.955 eV by means of optical spectroscopy. We demonstrate the existence of phonon-assisted optical transitions, and we measure an exciton binding energy of about 130 meV by two-photon spectroscopy. △ Less

Submitted 9 December, 2015; originally announced December 2015.

Comments: To appear in Nature Photonics

Unifying the low-temperature photoluminescence spectra of carbon nanotubes: the role of acoustic phonon confinement

Authors: Fabien Vialla, Yannick Chassagneux, Robson Ferreira, Cyrielle Roquelet, Carole Diederichs, Guillaume Cassabois, Philippe Roussignol, Jean-Sébastien Lauret, Christophe Voisin

Abstract: At low temperature the photoluminescence of single-wall carbon nanotubes show a large variety of spectral profiles ranging from ultra narrow lines in suspended nanotubes to broad and asymmetrical line-shapes that puzzle the current interpretation in terms of exciton-phonon coupling. Here, we present a complete set of photoluminescence profiles in matrix embedded nanotubes including unprecedented n… ▽ More At low temperature the photoluminescence of single-wall carbon nanotubes show a large variety of spectral profiles ranging from ultra narrow lines in suspended nanotubes to broad and asymmetrical line-shapes that puzzle the current interpretation in terms of exciton-phonon coupling. Here, we present a complete set of photoluminescence profiles in matrix embedded nanotubes including unprecedented narrow emission lines. We demonstrate that the diversity of the low-temperature luminescence profiles in nanotubes originates in tiny modifications of their low-energy acoustic phonon modes. When low energy modes are locally suppressed, a sharp photoluminescence line as narrow as 0.7 meV is restored. Furthermore, multi-peak luminescence profiles with specific temperature dependence show the presence of confined phonon modes. △ Less

Submitted 3 June, 2014; originally announced June 2014.

Journal ref: Phys. Rev. Lett. 113, 057402 (2014)

Photo-draining and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

Authors: Hai Son Nguyen, Gregory Sallen, Marco Abbarchi, Robson Ferreira, Christophe Voisin, Philippe Roussignol, Guillaume Cassabois, Carole Diederichs

Abstract: We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral exciton is blocked. The influence of the residual doping on the initial quantum dots charge state is analyzed, and the resonant emission quenching is interprete… ▽ More We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral exciton is blocked. The influence of the residual doping on the initial quantum dots charge state is analyzed, and the resonant emission quenching is interpreted as a Coulomb blockade effect. The use of an additional non-resonant laser in a specific low power regime leads to the carrier draining in quantum dots and allows an efficient optical gating of the exciton resonant emission. A detailed population evolution model, developed to describe the carrier draining and the optical gate effect, perfectly fits the experimental results in the steady state and dynamical regimes of the optical gate with a single set of parameters. We deduce that ultra-slow Auger- and phonon-assisted capture processes govern the carrier draining in quantum dots with relaxation times in the 1 - 100 microsecond range. We conclude that the optical gate acts as a very sensitive probe of the quantum dots population relaxation in an unprecedented slow-capture regime. △ Less

Submitted 8 February, 2013; v1 submitted 13 December, 2012; originally announced December 2012.

Ultra-coherent single photon source

Authors: Hai Son Nguyen, Gregory Sallen, Christophe Voisin, Philippe Roussignol, Carole Diederichs, Guillaume Cassabois

Abstract: We present a novel type of single photon source in solid state, based on the coherent laser light scattering by a single InAs quantum dot. We demonstrate that the coherence of the emitted single photons is tailored by the resonant excitation with a spectral linewidth below the radiative limit. Our ultra-coherent source opens the way for integrated quantum devices dedicated to the generation of sin… ▽ More We present a novel type of single photon source in solid state, based on the coherent laser light scattering by a single InAs quantum dot. We demonstrate that the coherence of the emitted single photons is tailored by the resonant excitation with a spectral linewidth below the radiative limit. Our ultra-coherent source opens the way for integrated quantum devices dedicated to the generation of single photons with high degrees of indistinguishability. △ Less

Submitted 7 November, 2011; originally announced November 2011.

Optically-gated resonant emission in single quantum dots

Authors: Hai Son Nguyen, Gregory Sallen, Christophe Voisin, Philippe Roussignol, Carole Diederichs, Guillaume Cassabois

Abstract: We report on the resonant emission in coherently-driven single semiconductor quantum dots. We demonstrate that an ultra-weak non-resonant laser acts as an optical gate for the quantum dot resonant response. We show that the gate laser suppresses Coulomb blockade at the origin of a resonant emission quenching, and that the optically-gated quantum dots systematically behave as ideal two-level system… ▽ More We report on the resonant emission in coherently-driven single semiconductor quantum dots. We demonstrate that an ultra-weak non-resonant laser acts as an optical gate for the quantum dot resonant response. We show that the gate laser suppresses Coulomb blockade at the origin of a resonant emission quenching, and that the optically-gated quantum dots systematically behave as ideal two-level systems in both regimes of coherent and incoherent resonant emission. △ Less

Submitted 20 September, 2011; originally announced September 2011.

Temperature dependence of exciton recombination in semiconducting single-wall carbon nanotubes

Authors: S. Berger, C. Voisin, G. Cassabois, C. Delalande, Philippe Roussignol, X. Marie

Abstract: We study the excitonic recombination dynamics in an ensemble of (9,4) semiconducting single-wall carbon nanotubes by high sensitivity time-resolved photo-luminescence experiments. Measurements from cryogenic to room temperature allow us to identify two main contributions to the recombination dynamics. The initial fast decay is temperature independent and is attributed to the presence of small re… ▽ More We study the excitonic recombination dynamics in an ensemble of (9,4) semiconducting single-wall carbon nanotubes by high sensitivity time-resolved photo-luminescence experiments. Measurements from cryogenic to room temperature allow us to identify two main contributions to the recombination dynamics. The initial fast decay is temperature independent and is attributed to the presence of small residual bundles that create external non-radiative relaxation channels. The slow component shows a strong temperature dependence and is dominated by non-radiative processes down to 40 K. We propose a quantitative phenomenological modeling of the variations of the integrated photoluminescence intensity over the whole temperature range. We show that the luminescence properties of carbon nanotubes at room temperature are not affected by the dark/bright excitonic state coupling. △ Less

Submitted 8 January, 2007; originally announced January 2007.

Journal ref: Nanoletters (2007) 8

Unconventional motional narrowing in the optical spectrum of a semiconductor quantum dot

Authors: Alice Berthelot, Ivan Favero, Guillaume Cassabois, Christophe Voisin, Claude Delalande, Philippe Roussignol, Robson Ferreira, Jean-Michel Gérard

Abstract: Motional narrowing refers to the striking phenomenon where the resonance line of a system coupled to a reservoir becomes narrower when increasing the reservoir fluctuation. A textbook example is found in nuclear magnetic resonance, where the fluctuating local magnetic fields created by randomly oriented nuclear spins are averaged when the motion of the nuclei is thermally activated. The existenc… ▽ More Motional narrowing refers to the striking phenomenon where the resonance line of a system coupled to a reservoir becomes narrower when increasing the reservoir fluctuation. A textbook example is found in nuclear magnetic resonance, where the fluctuating local magnetic fields created by randomly oriented nuclear spins are averaged when the motion of the nuclei is thermally activated. The existence of a motional narrowing effect in the optical response of semiconductor quantum dots remains so far unexplored. This effect may be important in this instance since the decoherence dynamics is a central issue for the implementation of quantum information processing based on quantum dots. Here we report on the experimental evidence of motional narrowing in the optical spectrum of a semiconductor quantum dot broadened by the spectral diffusion phenomenon. Surprisingly, motional narrowing is achieved when decreasing incident power or temperature, in contrast with the standard phenomenology observed for nuclear magnetic resonance. △ Less

Submitted 12 October, 2006; originally announced October 2006.

Journal ref: Nature Physics (08/10/2006) ?

Fast exciton spin relaxation in single quantum dots

Authors: I. Favero, Guillaume Cassabois, C. Voisin, C. Delalande, Ph. Roussignol, R. Ferreira, C. Couteau, J. P. Poizat, J. M. Gérard

Abstract: Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal emitted by isolated quantum dots under steady-state or pulsed non-resonant excitation. We find that the longitudinal exciton spin relaxation time is strikingly sh… ▽ More Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in order to test the expected spin relaxation quenching in this system. We study the polarization anisotropy of the photoluminescence signal emitted by isolated quantum dots under steady-state or pulsed non-resonant excitation. We find that the longitudinal exciton spin relaxation time is strikingly short ($\leq$100 ps) even at low temperature. This result breaks down the picture of a frozen exciton spin in quantum dots. △ Less

Submitted 9 May, 2005; originally announced May 2005.

Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble

Authors: I. Favero, Guillaume Cassabois, A. Jankovic, R. Ferreira, D. Darson, C. Voisin, C. Delalande, Ph. Roussignol, A. Badolato, P. M. Petroff, J. M. Gerard

Abstract: We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another, in sign and in magnitude with absolute values up to 82%. Systematic measurements on hundreds of quantum dots coming from two different laboratories demonstrat… ▽ More We present the experimental evidence of giant optical anisotropy in single InAs quantum dots. Polarization-resolved photoluminescence spectroscopy reveals a linear polarization ratio with huge fluctuations, from one quantum dot to another, in sign and in magnitude with absolute values up to 82%. Systematic measurements on hundreds of quantum dots coming from two different laboratories demonstrate that the giant optical anisotropy is an intrinsic feature of dilute quantum-dot arrays. △ Less

Submitted 18 November, 2004; originally announced November 2004.

Comments: submitted to Applied Physics Letters