Showing 1–50 of 97 results for author: Casanova, F

Second-Order Conductivity Probes a Cascade of Singularities in a Moiré Superlattice

Authors: Tanweer Ahmed, Bao Q. Tu, Kenji Watanabe, Takashi Taniguchi, Marco Gobbi, Fèlix Casanova, Luis E. Hueso

Abstract: Systems lacking inversion symmetry inherently demonstrate a nonlinear electrical response (NLER) to an applied electric bias, emerging through extrinsic mechanisms. This response is highly sensitive to the electronic band structure, which can be engineered with remarkable precision in moiré superlattices formed from atomically thin quantum materials. Moiré superlattices host complex Fermi surface… ▽ More Systems lacking inversion symmetry inherently demonstrate a nonlinear electrical response (NLER) to an applied electric bias, emerging through extrinsic mechanisms. This response is highly sensitive to the electronic band structure, which can be engineered with remarkable precision in moiré superlattices formed from atomically thin quantum materials. Moiré superlattices host complex Fermi surface reconstructions near van Hove singularities (vHSs) in the electronic density of states. However, the role of these reconstructions in shaping NLER remains insufficiently understood. In this work, we systematically explore NLER in moiré superlattices of twisted double bilayer graphene (tDBLG) by tuning the Fermi level across multiple moiré bands on both sides of the charge neutrality point. We observe sharp variations and sign reversals in the NLER appearing via extrinsic pathways near mid-band vHSs. The second-order conductivity close to the vHSs demonstrates a much higher value than previous reports of extrinsic NLER in any other material. Our results demonstrate that NLER can serve as a sensitive probe of Fermi surface reconstructions and establish tDBLG as a versatile and highly efficient platform for generating and controlling the nonlinear electrical response. △ Less

Submitted 8 July, 2025; originally announced July 2025.

Comments: This is the pre-peer reviewed version, which has been published in final form in ACS Nano. The published article and the supporting information can be obtained from https://doi.org/10.1021/acsnano.5c03684. This article may be used for non-commercial purposes

Detecting Lifshitz Transitions Using Nonlinear Conductivity in Bilayer Graphene

Authors: Tanweer Ahmed, Harsh Varshney, Bao Q. Tu, Kenji Watanabe, Takashi Taniguchi, Marco Gobbi, Fèlix Casanova, Amit Agarwal, Luis E. Hueso

Abstract: The second-order nonlinear electrical response (NLER) is an intrinsic property of inversion symmetry-broken systems which can provide deep insights into the electronic band structures of atomically thin quantum materials. However, the impact of Fermi surface reconstructions, also known as Lifshitz transitions, on the NLER has remained elusive. We investigated NLER in bilayer graphene (BLG), where… ▽ More The second-order nonlinear electrical response (NLER) is an intrinsic property of inversion symmetry-broken systems which can provide deep insights into the electronic band structures of atomically thin quantum materials. However, the impact of Fermi surface reconstructions, also known as Lifshitz transitions, on the NLER has remained elusive. We investigated NLER in bilayer graphene (BLG), where the low-energy bands undergo Lifshitz transitions. Here, NLER undergoes a sign change near the Lifshitz transitions even at elevated temperatures $T\gtrsim10~$K. At the band edge, NLER in BLG is modulated by both extrinsic scattering and interfacial-strain-induced intrinsic Berry curvature dipole, both of which can be finely tuned externally by varying doping and interlayer potential. Away from the band edge, BLG exhibits second-order conductivity exceeding $30~μ$mV$^{-1}Ω^{-1}$ at 3K higher than any previous report. Our work establishes NLER as a reliable tool to probe Lifshitz transitions in quantum materials. △ Less

Submitted 8 July, 2025; originally announced July 2025.

Comments: This is the pre-peer reviewed version of the following article: Ahmed, T. et al., Small 2025, 21 (21), 2501426, which has been published in final form at https://doi.org/10.1002/smll.202501426. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions

Journal ref: Small 2025, 21 (21), 2501426

Orbital Hall conductivity and orbital diffusion length of Vanadium thin films by Hanle magnetoresistance

Authors: M. Xochitl Aguilar-Pujol, Isabel C. Arango, Eoin Dolan, Marco Gobbi, Luis E. Hueso, Fèlix Casanova

Abstract: In spintronics, the spin Hall effect has been widely used to generate and detect spin currents in materials with strong spin-orbit coupling such as Pt and Ta. Recently, its orbital counterpart has drawn attention as a new tool to generate and detect orbital currents and thus investigate orbital transport parameters. In this study, we investigate vanadium (V), a $3d$ transition metal with weak spin… ▽ More In spintronics, the spin Hall effect has been widely used to generate and detect spin currents in materials with strong spin-orbit coupling such as Pt and Ta. Recently, its orbital counterpart has drawn attention as a new tool to generate and detect orbital currents and thus investigate orbital transport parameters. In this study, we investigate vanadium (V), a $3d$ transition metal with weak spin-orbit coupling but with a theoretically large orbital Hall conductivity. We measure a large Hanle magnetoresistance in V thin films with a magnitude comparable to that of heavy metals and at least one order of magnitude higher than the spin Hall magnetoresistance observed in a Y$_3$Fe$_5$O$_{12}$/V bilayer, pointing to the orbital Hall origin of the effect. A fit of the magnetic-field dependence and thickness dependence of the Hanle magnetoresistance to the standard diffusion model allows us to quantify the orbital diffusion length (~2 nm) and the orbital Hall conductivity (~78 ($\hbar/2e$) $Ω^{-1}$cm$^{-1}$) of V. The obtained orbital Hall conductivity is two orders of magnitude smaller than theoretical calculations of the intrinsic value, suggesting there is an important role of disorder. △ Less

Submitted 6 June, 2025; originally announced June 2025.

Comments: 13 pages, 5 figures, Supplemental Material

Unconventional magnon transport in antiferromagnet NiPS$_3$ induced by an anisotropic spin-flop transition

Authors: Peisen Yuan, Beatriz Martín-García, Evgeny Modin, M. Xochitl Aguilar-Pujol, Fèlix Casanova, Luis E. Hueso

Abstract: Nonlocal magnon transport can provide valuable insight into the magnetic properties of magnetic insulators (MIs). A spin-flop transition, a typical magnetic reorientation in antiferromagnets, is expected to affect mag non transport, but studies on this topic are still rare and remain challenging, especially for van der Waals materials. Here we demonstrate the unconventional magnon transport driven… ▽ More Nonlocal magnon transport can provide valuable insight into the magnetic properties of magnetic insulators (MIs). A spin-flop transition, a typical magnetic reorientation in antiferromagnets, is expected to affect mag non transport, but studies on this topic are still rare and remain challenging, especially for van der Waals materials. Here we demonstrate the unconventional magnon transport driven by an anisotropic spin-flop transition in the van der Waals antiferromagnet NiPS$_3$. Examining the nonlocal voltage from thermally driven magnons reveals sharp jumps at certain directions when an inplane magnetic field aligns with the b-axis of NiPS$_3$, attributed to an in-plane anisotropic spin-flop transition. Furthermore, thermally driven magnon signal exhibits a 1/d$^2$ decay in thin NiPS$_3$, evidencing that it is dominated by the intrinsic spin Seebeck effect. Our findings highlight that the electrical detection of magnon currents in a nonlocal device geometry serves as a powerful approach for studying magnetic phase transitions in MIs. △ Less

Submitted 29 May, 2025; originally announced May 2025.

Comments: 16 pages, 5 figures, and Supporting Information

Journal ref: Nano Letters 25, 5350-5357 (2025)

Nonvolatile Electric Control of Antiferromagnet CrSBr

Authors: Junhyeon Jo, Samuel Mañas-Valero, Eugenio Coronado, Fèlix Casanova, Marco Gobbi, Luis E. Hueso

Abstract: van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components which would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antife… ▽ More van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components which would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200 % change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way. △ Less

Submitted 21 February, 2025; originally announced February 2025.

Journal ref: Nano Letters 24, 15, 4471 (2024)

Galvanic molecular intercalation

Authors: Daniel Tezze, Covadonga Álvarez, Daniel Margineda, José Manuel Pereira, Umer Ahsan, Vlastimil Mazanek, Yogesh Kumar Maurya, Aurelio Mateo-Alonso, Frederik M. Schiller, Fèlix Casanova, Samuel Mañas-Valero, Eugenio Coronado, Iván Rivilla, Zdenek Sofer, Beatriz Martín-García, Maider Ormaza, Luis E. Hueso, Marco Gobbi

Abstract: The intercalation of molecular species between the layers of van der Waals (vdW) materials has recently emerged as a powerful approach to combine the remarkable electronic and magnetic properties of vdW materials with the chemical flexibility of organic molecules. However, the full transformative potential of molecular intercalation remains underexplored, largely due to the lack of simple, broadly… ▽ More The intercalation of molecular species between the layers of van der Waals (vdW) materials has recently emerged as a powerful approach to combine the remarkable electronic and magnetic properties of vdW materials with the chemical flexibility of organic molecules. However, the full transformative potential of molecular intercalation remains underexplored, largely due to the lack of simple, broadly applicable methods that preserve high crystalline quality down to the few-layer limit. Here, we introduce a simple galvanic approach to intercalate different molecules into various vdW materials under ambient conditions, leveraging the low reduction potential of selected metals to enable a spontaneous molecular insertion. We employ our method, which is particularly well-suited for the in-situ intercalation of few-layer-thick crystals, to intercalate nine vdW materials, including magnets and superconductors, with molecules ranging from conventional alkylammonium ions to metallorganic and bio-inspired chiral cations. Notably, intercalation leads to a molecule-dependent enhancement of the superconducting transition in 2H-TaS2, reaching a critical temperature of 4.7 K, higher than TaS2 monolayers. Additionally, RuCl3 exhibits an unprecedented transition from antiferromagnetic to ferrimagnetic ordering upon intercalation with cobaltocenium. These results establish our approach as a versatile technique for engineering atomically thin quantum materials and heterostructures, unlocking the transformative effects of molecular intercalation. △ Less

Submitted 9 January, 2025; originally announced January 2025.

Unveiling intrinsic bulk photovoltaic effect in atomically thin ReS2

Authors: Maria Ramos, Tanweer Ahmed, Bao Q. Tu, Eleni Chatzikyriakou, Lucía Olano-Vegas, Beatriz Martín-García, M. Reyes Calvo, Stepan S. Tsirkin, Ivo Souza, Félix Casanova, Fernando de Juan, Marco Gobbi, Luis E. Hueso

Abstract: The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguis… ▽ More The bulk photovoltaic effect (BPVE) offers a promising avenue to surpass the efficiency limitations of current solar cell technology. However, disentangling intrinsic and extrinsic contributions to photocurrent remains a significant challenge. Here, we fabricate high-quality, lateral devices based on atomically thin ReS2 with minimal contact resistance, providing an optimal platform for distinguishing intrinsic bulk photovoltaic signals from other extrinsic photocurrent contributions originating from interfacial effects. Our devices exhibit large bulk photovoltaic performance with intrinsic responsivities of 1 mA/W in the visible range, without the need for external tuning knobs such as strain engineering. Our experimental findings are supported by theoretical calculations. Furthermore, our approach can be extrapolated to investigate the intrinsic BPVE in other non-centrosymmetric van der Waals materials, paving the way for a new generation of efficient light-harvesting devices. △ Less

Submitted 18 December, 2024; originally announced December 2024.

Journal ref: Nano Letters 24, 46, 14728-14735 (2024)

Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures

Authors: Haozhe Yang, Zhendong Chi, Garen Avedissian, Eoin Dolan, Muthumalai Karuppasamy, Beatriz Martín-García, Marco Gobbi, Zdenek Sofer, Luis E. Hueso, Fèlix Casanova

Abstract: Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin-orbit coupling materials in close contact to graph… ▽ More Spintronic devices require materials that facilitate effective spin transport, generation, and detection. In this regard, graphene emerges as an ideal candidate for long-distance spin transport owing to its minimal spin-orbit coupling, which, however, limits its capacity for effective spin manipulation. This problem can be overcome by putting spin-orbit coupling materials in close contact to graphene leading to spin-orbit proximity and, consequently, efficient spin-to-charge conversion through mechanisms such as the spin Hall effect. Here, we report and quantify the gate-dependent spin Hall effect in trilayer graphene proximitized with tin sulfide (SnS), a group-IV monochalcogenide which has recently been predicted to be a viable alternative to transition-metal dichalcogenides for inducing strong spin-orbit coupling in graphene. The spin Hall angle exhibits a maximum around the charge neutrality point of graphene up to room temperature. Our findings expand the library of materials that induce spin-orbit coupling in graphene to a new class, group-IV monochalcogenides, thereby highlighting the potential of two-dimensional materials to pave the way for the development of innovative spin-based devices and future technological applications. △ Less

Submitted 12 December, 2024; originally announced December 2024.

Comments: 26 pages, 11 figures. arXiv admin note: text overlap with arXiv:2305.01787, arXiv:2312.10227

Journal ref: Adv. Funct. Mater. 2404872 (2024)

Non-linear Transport in Non-centrosymmetric Systems: From Fundamentals to Applications

Authors: Manuel Suárez-Rodríguez, Fernando De Juan, Ivo Souza, Marco Gobbi, Fèlix Casanova, Luis E. Hueso

Abstract: Ohm's law has been a cornerstone of electronics since its experimental discovery. This law establishes that in a conductive system, the voltage is directly proportional to the current. Even when time-reversal symmetry is disrupted, leading to the emergence of magnetoresistance and Hall effects, the linear relationship between voltage and current remains intact. However, recent experiments have dem… ▽ More Ohm's law has been a cornerstone of electronics since its experimental discovery. This law establishes that in a conductive system, the voltage is directly proportional to the current. Even when time-reversal symmetry is disrupted, leading to the emergence of magnetoresistance and Hall effects, the linear relationship between voltage and current remains intact. However, recent experiments have demonstrated a breakdown of Ohm's law in non-centrosymmetric structures. In these systems, non-linear transport effects are permitted with quadratic scaling between voltages and currents. Here, we review the main demonstrations of non-linear transport in non-centrosymmetric systems, analyzing the connection between non-linear behavior and the system's symmetry. Additionally, we delve into the microscopic mechanisms driving these effects, such as Berry curvature dipole and Berry connection polarizability. Finally, we highlight potential applications of non-linear transport in spintronics and energy harvesting. △ Less

Submitted 20 May, 2025; v1 submitted 6 December, 2024; originally announced December 2024.

Comments: 19 pages, 4 figures, 4 tables

Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet

Authors: Mayank Sharma, Garen Avedissian, Witold Skowroński, Junhyeon Jo, Andrey Chuvilin, Fèlix Casanova, Marco Gobbi, Luis E. Hueso

Abstract: The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exc… ▽ More The discovery of van der Waals magnets has established a new domain in the field of magnetism, opening novel pathways for the electrical control of magnetic properties. In this context, Fe3GeTe2 (FGT) emerges as an exemplary candidate owing to its intrinsic metallic properties, which facilitate the interplay of both charge and spin degrees of freedom. Here, the bidirectional voltage control of exchange bias (EB) effect in a perpendicularly magnetized all-van der Waals FGT/O-FGT/hBN heterostructure is demonstrated. The antiferromagnetic O-FGT layer is formed by naturally oxidizing the FGT surface. The observed EB magnitude reaches 1.4 kOe with a blocking temperature (150 K) reaching close to the Curie temperature of FGT. Both the exchange field and the blocking temperature values are among the highest in the context of layered materials. The EB modulation exhibits a linear dependence on the gate voltage and its polarity, observable in both positive and negative field cooling (FC) experiments. Additionally, gate voltage-controlled magnetization switching, highlighting the potential of FGT-based heterostructures is demonstrated in advanced spintronic devices. These findings display a methodology to modulate the magnetism of van der Waals magnets offering new avenues for the development of high-performance magnetic devices. △ Less

Submitted 27 November, 2024; originally announced November 2024.

Comments: This project has received funding from the European Union's H2020 research and innovation programme under grant agreement Nos. 965046 (INTERFAST) and 964396 (SINFONIA), and Marie Skłodowska-Curie grant agreement No. 955671 (SPEAR). To be published in Advanced Materials Interfaces (Early View: 2400678)

A seamless graphene spin valve based on proximity to van der Waals magnet Cr$_2$Ge$_2$Te$_6$

Authors: Haozhe Yang, Marco Gobbi, Franz Herling, Van Tuong Pham, Francesco Calavalle, Beatriz Martín-García, Albert Fert, Luis E. Hueso, Fèlix Casanova

Abstract: Pristine graphene is potentially an ideal medium to transport spin information. Proximity effects, where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions, can also be used in graphene to generate and detect spins by acquiring spin-orbit coupling or magnetic exchange coupling. However, the development of seamless spintronic devices that are… ▽ More Pristine graphene is potentially an ideal medium to transport spin information. Proximity effects, where a neighbouring material is used to alter the properties of a material in adjacent (or proximitized) regions, can also be used in graphene to generate and detect spins by acquiring spin-orbit coupling or magnetic exchange coupling. However, the development of seamless spintronic devices that are based uniquely on proximity effects remains challenging. Here, we report a two-dimensional graphene spin valve that is enabled by proximity to the van der Waals magnet Cr$_2$Ge$_2$Te$_6$. Spin precession measurements show that graphene acquires both spin-orbit coupling and magnetic exchange coupling when interfaced with the Cr$_2$Ge$_2$Te$_6$. This leads to spin generation by both electrical spin injection and the spin Hall effect, while retaining long-distance spin transport. The simultaneous presence of spin-orbit coupling and magnetic exchange coupling also leads to a sizeable anomalous Hall effect. △ Less

Submitted 11 August, 2024; originally announced August 2024.

Comments: 21 pages, 4 figures, and Supplementary information

Symmetry Origin and Microscopic Mechanism of Electrical Magnetochiral Anisotropy in Tellurium

Authors: Manuel Suárez-Rodríguez, Beatriz Martín-García, Francesco Calavalle, Stepan S. Tsirkin, Ivo Souza, Fernando De Juan, Albert Fert, Marco Gobbi, Luis E. Hueso, Fèlix Casanova

Abstract: Non-linear transport effects in response to external magnetic fields, i.e. electrical magnetochiral anisotropy (eMChA), have attracted much attention for their importance to study quantum and spin-related phenomena. Indeed, they have permitted the exploration of topological surface states and charge-to-spin conversion processes in low-symmetry systems. Nevertheless, despite the inherent correlatio… ▽ More Non-linear transport effects in response to external magnetic fields, i.e. electrical magnetochiral anisotropy (eMChA), have attracted much attention for their importance to study quantum and spin-related phenomena. Indeed, they have permitted the exploration of topological surface states and charge-to-spin conversion processes in low-symmetry systems. Nevertheless, despite the inherent correlation between the symmetry of the material under examination and its non-linear transport characteristics, there is a lack of experimental demonstration to delve into this relationship and to unveil their microscopic mechanisms. Here, we study eMChA in chiral elemental Tellurium (Te) along different crystallographic directions, establishing the connection between the different eMChA components and the crystal symmetry of Te. We observed different longitudinal eMChA components with collinear current and magnetic field, demonstrating experimentally the radial angular momentum texture of Te. We also measured a transverse non-linear resistance which, as the longitudinal counterpart, scales bilinearly with current and magnetic fields, illustrating that they are different manifestations of the same effect. Finally, we study the scaling law of the eMChA, evidencing that extrinsic scattering from dynamic sources is the dominant microscopic mechanism. These findings underscore the efficacy of symmetry-based investigations in understanding and predicting non-linear transport phenomena, with potential applications in spintronics and energy harvesting. △ Less

Submitted 15 January, 2025; v1 submitted 25 June, 2024; originally announced June 2024.

Comments: 8 pages, 4 figures, and Supplemental Material

Journal ref: Phys. Rev. B 111, 024405 (2025)

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Authors: C. K. Safeer, Paul S. Keatley, Witold Skowroński, Jakub Mojsiejuk, Kay Yakushiji, Akio Fukushima, Shinji Yuasa, Daniel Bedau, Fèlix Casanova, Luis E. Hueso, Robert J. Hicken, Daniele Pinna, Gerrit van der Laan, Thorsten Hesjedal

Abstract: Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In… ▽ More Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of frequency-dependent capacitive current effect in CoFeB/MgO-based MTJs and its influence on magnetization dynamics using time-resolved magneto-optical Kerr effect technique. In our device operating at gigahertz frequencies, we find a large displacement current of the order of mA's, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high frequency magnetotransport techniques. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Journal ref: Phys. Rev. Applied 22, 024019 (2024)

Tailoring Photoluminescence by Strain-Engineering in Layered Perovskite Flakes

Authors: Davide Spirito, María Barra-Burillo, Francesco Calavalle, Costanza Lucia Manganelli, Marco Gobbi, Rainer Hillenbrand, Fèlix Casanova, Luis E. Hueso, Beatriz Martín-García

Abstract: Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D $(C_6H_5CH_2CH_2NH_3)_2Cs_3Pb_4Br_{13}$ HOIP subject to biaxia… ▽ More Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical properties. Here, we investigate the temperature-dependent microphotoluminescence (PL) of 2D $(C_6H_5CH_2CH_2NH_3)_2Cs_3Pb_4Br_{13}$ HOIP subject to biaxial strain induced by a $SiO_2$ ring platform on which flakes are placed by viscoelastic stamping. At 80 K, we found that a strain of <1% can change the PL emission from a single peak (unstrained) to three well-resolved peaks. Supported by micro-Raman spectroscopy, we show that the thermomechanically generated strain modulates the bandgap due to changes in the octahedral tilting and lattice expansion. Mechanical simulations demonstrate the coexistence of tensile and compressive strain along the flake. The observed PL peaks add an interesting feature to the rich phenomenology of photoluminescence in 2D HOIPs, which can be exploited in tailored sensing and optoelectronic devices. △ Less

Submitted 21 April, 2024; originally announced April 2024.

Comments: 4 figures

Journal ref: Nano Lett. 2022, 22 (10), 4153-4160

Magnetic properties of layered hybrid organic-inorganic metal-halide perovskites: transition metal, organic cation and perovskite phase effects

Authors: Yaiza Asensio, Sergio Marras, Davide Spirito, Marco Gobbi, Mihail Ipatov, Fèlix Casanova, Aurelio Mateo-Alonso, Luis E. Hueso, Beatriz Martín-García

Abstract: Understanding the structural and magnetic properties in layered hybrid organic-inorganic metal halide perovskites (HOIPs) is key for their design and integration in spin-electronic devices. Here, we have conducted a systematic study on ten compounds to understand the effect of the transition metal (Cu$^{2+}$, Mn$^{2+}$, Co$^{2+}$), organic spacer (alkyl- and aryl-ammonium) and perovskite phase (Ru… ▽ More Understanding the structural and magnetic properties in layered hybrid organic-inorganic metal halide perovskites (HOIPs) is key for their design and integration in spin-electronic devices. Here, we have conducted a systematic study on ten compounds to understand the effect of the transition metal (Cu$^{2+}$, Mn$^{2+}$, Co$^{2+}$), organic spacer (alkyl- and aryl-ammonium) and perovskite phase (Ruddlesden-Popper and Dion-Jacobson) on the properties of these materials. Temperature-dependent Raman measurements show that the crystals' structural phase transitions are triggered by the motional freedom of the organic cations as well as by the flexibility of the inorganic metal-halide lattice. In the case of Cu$^{2+}$ HOIPs, an increase of the in-plane anisotropy and a reduction of the octahedra interlayer distance is found to change the behavior of the HOIP from that of a 2D ferromagnet to that of a quasi-3D antiferromagnet. Mn$^{2+}$ HOIPs show inherent antiferromagnetic octahedra intralayer interactions and a phenomenologically rich magnetism, presenting spin-canting, spin-flop transitions and metamagnetism controlled by the crystal anisotropy. Co$^{2+}$ crystals with non-linked tetrahedra show a dominant paramagnetic behavior irrespective of the organic spacer and the perovskite phase. This work demonstrates that the chemical flexibility of HOIPs can be exploited to develop novel layered magnetic materials with tailored magnetic properties. △ Less

Submitted 20 April, 2024; originally announced April 2024.

Comments: 5 figures

Journal ref: Adv. Funct. Mater. 2022, 32, 2207988

Percolating Superconductivity in Air-Stable Organic-Ion Intercalated MoS2

Authors: Jose M. Pereira, Daniel Tezze, Iris Niehues, Yaiza Asensio, Haozhe Yang, Lars Mester, Shu Chen, Felix Casanova, Alexander M. Bittner, Maider Ormaza, Frederik Schiller, Beatriz Martin-Garcia, Rainer Hillenbrand, Luis E. Hueso, Marco Gobbi

Abstract: When doped into a certain range of charge carrier concentrations, MoS2 departs from its pristine semiconducting character to become a strongly correlated material characterized by exotic phenomena such as charge density waves or superconductivity. However, the required doping levels are typically achieved using ionic-liquid gating or air-sensitive alkali-ion intercalation, which are not compatible… ▽ More When doped into a certain range of charge carrier concentrations, MoS2 departs from its pristine semiconducting character to become a strongly correlated material characterized by exotic phenomena such as charge density waves or superconductivity. However, the required doping levels are typically achieved using ionic-liquid gating or air-sensitive alkali-ion intercalation, which are not compatible with standard device fabrication processes. Here, we report on the emergence of superconductivity and a charge density wave phase in air-stable organic cation intercalated MoS2 crystals. By selecting two different molecular guests, we show that these correlated electronic phases depend dramatically on the intercalated cation, demonstrating the potential of organic ion intercalation to finely tune the properties of 2D materials. Moreover, we find that a fully developed zero-resistance state is not reached in few-nm-thick flakes, indicating the presence of three-dimensional superconductive paths which are severed by the mechanical exfoliation. We ascribe this behavior to an inhomogeneous charge carrier distribution, which we probe at the nanoscale using scanning near-field optical microscopy. Our results establish organic-ion intercalated MoS2 as a platform to study the emergence and modulation of correlated electronic phases. △ Less

Submitted 27 February, 2024; originally announced February 2024.

Journal ref: J Adv. Funct. Mater. 2022, 32, 2208761

Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves

Authors: Zhendong Chi, Seungjun Lee, Haozhe Yang, Eoin Dolan, C. K. Safeer, Josep Ingla-Aynés, Franz Herling, Nerea Ontoso, Beatriz Martín-García, Marco Gobbi, Tony Low, Luis E. Hueso, Fèlix Casanova

Abstract: A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin inte… ▽ More A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS$_2$ van der Waals heterostructures by manipulating the distinct CDW phases in 1T-TaS$_2$. Whereas CSI from spins polarized in all three directions are observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains are at the origin of the switching of CSI. Our results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices. △ Less

Submitted 24 June, 2024; v1 submitted 16 January, 2024; originally announced January 2024.

Comments: Funding information: Marie Sklodowska-Curie Actions, H2020-MSCA-ITN-2020; Project Acronym SPEAR; Grant Agreement No. 955671

Twist-angle tunable spin texture in WSe$_2$/graphene van der Waals heterostructures

Authors: Haozhe Yang, Beatriz Martín-García, Jozef Kimák, Eva Schmoranzerová, Eoin Dolan, Zhendong Chi, Marco Gobbi, Petr Němec, Luis E. Hueso, Fèlix Casanova

Abstract: Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion… ▽ More Angle-twisting engineering has emerged as a powerful tool for modulating electronic properties in van der Waals heterostructures. Recent theoretical works have predicted the modulation of spin texture in graphene-based heterostructures by twist angle, although an experimental verification is missing. Here, we demonstrate the tunability of the spin texture and associated spin-charge interconversion with twist angle in WSe$_2$/graphene heterostructures by using spin precession experiments. For specific twist angles, we experimentally detect a spin component radial with the electron's momentum, in addition to the standard orthogonal component. Our results show that the helicity of the spin texture can be reversed by angle twisting, highlighting its critical role on the spin-orbit properties of WSe$_2$/graphene heterostructures and paving the way for the development of novel spin-twistronic devices. △ Less

Submitted 15 December, 2023; originally announced December 2023.

Comments: 14 pages, 5 figures and Supplementary Information

Journal ref: Nature Materials 23, 1502-1508 (2024)

Electrical control of magnetism by electric field and current-induced torques

Authors: Albert Fert, Ramamoorthy Ramesh, Vincent Garcia, Fèlix Casanova, Manuel Bibes

Abstract: While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current may switch the magnetization of a ferroma… ▽ More While early magnetic memory designs relied on magnetization switching by locally generated magnetic fields, key insights in condensed matter physics later suggested the possibility to do it electrically. In the 1990s, Slonczewzki and Berger formulated the concept of current-induced spin torques in magnetic multilayers through which a spin-polarized current may switch the magnetization of a ferromagnet. This discovery drove the development of spin-transfer-torque magnetic random-access memories (STT-MRAMs). More recent research unveiled spin-orbit-torques (SOTs) and will lead to a new generation of devices including SOT-MRAMs. Parallel to these advances, multiferroics and their magnetoelectric coupling experienced a renaissance, leading to novel device concepts for information and communication technology such as the MESO transistor. The story of the electrical control of magnetization is that of a dance between fundamental research (in spintronics, condensed matter physics, and materials science) and technology (MRAMs, MESO, microwave emitters, spin-diodes, skyrmion-based devices, components for neuromorphics, etc). This pas de deux led to major breakthroughs over the last decades (pure spin currents, magnetic skyrmions, spin-charge interconversion, etc). As a result, this field has propelled MRAMs into consumer electronics products but also fueled discoveries in adjacent research areas such as ferroelectrics or magnonics. Here, we cover recent advances in the control of magnetism by electric fields and by current-induced torques. We first review fundamental concepts in these two directions, then discuss their combination, and finally present various families of devices harnessing the electrical control of magnetic properties for various application fields. We conclude by giving perspectives in terms of both emerging fundamental physics concepts and new directions in materials science. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Comments: Final version accepted for publication in Reviews of Modern Physics

Journal ref: Rev. Mod. Phys. 96, 015005 (2024)

Odd non-linear conductivity under spatial inversion in chiral Tellurium

Authors: Manuel Suárez-Rodríguez, Beatriz Martín-García, Witold Skowroński, F. Calavalle, Stepan S. Tsirkin, Ivo Souza, Fernando De Juan, Andrey Chuvilin, Albert Fert, Marco Gobbi, Fèlix Casanova, Luis E. Hueso

Abstract: Electrical transport in non-centrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a non-linear conductivity emerges along specific crystallographic directions. This non-linear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an in… ▽ More Electrical transport in non-centrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a non-linear conductivity emerges along specific crystallographic directions. This non-linear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the non-linear conductivity remain to be explored. Here, we report on a large, non-linear conductivity in chiral Tellurium. By measuring samples with opposite handedness, we demonstrate that the non-linear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the non-linear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral Te as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and non-linear transport, but also to develop wireless rectifiers and energy-harvesting chiral devices. △ Less

Submitted 16 April, 2024; v1 submitted 14 November, 2023; originally announced November 2023.

Comments: 7 pages, 4 figures, Supplemental Material

Journal ref: Phys. Rev. Lett. 132, 046303 (2024)

Quantification of spin-charge interconversion in highly resistive sputtered Bi$_x$Se$_{1-x}$ with non-local spin valves

Authors: Isabel C. Arango, Won Young Choi, Van Tuong Pham, Inge Groen, Diogo C. Vaz, Punyashloka Debashis, Hai Li, Mahendra DC, Kaan Oguz, Andrey Chuvilin, Luis E. Hueso, Ian A. Young, Fèlix Casanova

Abstract: The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se… ▽ More The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se$_{1-x}$ have often been overestimated due to spurious effects related to local currents combined with a lack of understanding of the effect of the interfaces and the use of approximations for unknown parameters, such as the spin diffusion length. In the present study, non-local spin valves are used to inject pure spin currents into Bi$_x$Se$_{1-x}$, allowing us to directly obtain its spin diffusion length as well as its spin Hall angle, from 10 K up to 300 K. These values, which are more accurate than those previously reported in sputtered Bi$_x$Se$_{1-x}$, evidence that the efficiency of this material is not exceptional. Indeed, the figure of merit for spin-charge interconversion, given by the product of these two parameters, is slightly under 1 nm. Our work demonstrates the importance of considering all material parameters and interfaces when quantifying the spin transport properties of materials with strong spin-orbit coupling. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 12 pages, 4 figures, 1 table, and Supplemental Material

Journal ref: Physical Review B 108, 104425 (2023)

All-electrical detection of the spin-charge conversion in nanodevices based on SrTiO3 two-dimensional electron gases

Authors: Fernando Gallego, Felix Trier, Srijani Mallik, Julien Bréhin, Sara Varotto, Luis Moreno Vicente-Arche, Tanay Gosavy, Chia-Ching Lin, Jean-René Coudevylle, Lucía Iglesias, Félix Casanova, Ian Young, Laurent Vila, Jean-Philippe Attané, Manuel Bibes

Abstract: The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large sp… ▽ More The Magnetoelectric Spin-Orbit (MESO) technology aims to bring logic into memory by combining a ferromagnet with a magnetoelectric (ME) element for information writing, and a spin-orbit (SO) element for information read-out through spin-charge conversion. Among candidate SO materials to achieve a large MESO output signal, oxide Rashba two-dimensional electron gases (2DEGs) have shown very large spin-charge conversion efficiencies, albeit mostly in spin-pumping experiments. Here, we report all-electrical spin-injection and spin-charge conversion experiments in nanoscale devices harnessing the inverse Edelstein effect of SrTiO3 2DEGs. We have designed, patterned and fabricated nanodevices in which a spin current injected from a cobalt layer into the 2DEG is converted into a charge current. We optimized the spin-charge conversion signal by applying back-gate voltages, and studied its temperature evolution. We further disentangled the inverse Edelstein contribution from spurious effects such as the planar Hall effect, the anomalous Hall effect or the anisotropic magnetoresistance. The combination of non-volatility and high energy efficiency of these devices could potentially lead to new technology paradigms for beyond-CMOS computing architectures. △ Less

Submitted 25 September, 2023; originally announced September 2023.

Out-of-plane spin-to-charge conversion at low temperatures in graphene/MoTe$_2$ heterostructures

Authors: Nerea Ontoso, C. K. Safeer, Josep Ingla-Aynés, Franz Herling, Luis E. Hueso, M. Reyes Calvo, Fèlix Casanova

Abstract: Multi-directional spin-to-charge conversion - in which spin polarizations with different orientations can be converted into a charge current in the same direction - has been demonstrated in low-symmetry materials and interfaces. This is possible because, in these systems, spin to charge conversion can occur in unconventional configurations in which spin polarization and charge current where charge… ▽ More Multi-directional spin-to-charge conversion - in which spin polarizations with different orientations can be converted into a charge current in the same direction - has been demonstrated in low-symmetry materials and interfaces. This is possible because, in these systems, spin to charge conversion can occur in unconventional configurations in which spin polarization and charge current where charge current, spin current and polarization do not need to be mutually orthogonal. Here, we explore, in the low temperature regime, the spin-to-charge conversion in heterostructures of graphene with the low-symmetry 1T' phase of MoTe$_2$. First, we observe the emergence of charge conversion for out-of-plane spins at temperatures below 100 K. This unconventional component is allowed by the symmetries of both MoTe$_2$ and graphene and likely arises from spin Hall effect in the spin-orbit proximitized graphene. Moreover, we examine the low-temperature evolution of non-local voltage signals arising from the charge conversion of the two in-plane spin polarizations, which have been previously observed at higher temperature. As a result, we report omni-directional spin-to-charge conversion - for all spin polarization orientations - in graphene/MoTe${_2}$ heterostructures at low temperatures. △ Less

Submitted 2 September, 2023; originally announced September 2023.

Comments: 7 pages, 4 figures

Journal ref: Applied Physics Letters 2023, 123:032401

Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide

Authors: Haozhe Yang, Maider Ormaza, Zhendong Chi, Eoin Dolan, Josep Ingla-Aynés, C. K. Safeer, Franz Herling, Nerea Ontoso, Marco Gobbi, Beatriz Martin-Garcia, Frederik Schiller, Luis E. Hueso, Fèlix Casanova

Abstract: Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin… ▽ More Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance the spin Hall angle in graphene while retaining a long spin diffusion length. Here, we combine a light metal oxide (oxidized Cu) with graphene to induce the spin Hall effect. Its efficiency, given by the product of the spin Hall angle and the spin diffusion length, can be tuned with the Fermi level position, exhibiting a maximum (1.8 $\pm$ 0.6 nm at 100 K) around the charge neutrality point. This all-light-element heterostructure shows a larger efficiency than conventional spin Hall materials. The gate-tunable spin Hall effect is observed up to room temperature. Our experimental demonstration provides an efficient spin-to-charge conversion system free from heavy metals and compatible with large-scale fabrication. △ Less

Submitted 20 February, 2024; v1 submitted 2 May, 2023; originally announced May 2023.

Comments: 15 pages, 4 figures, and Supporting Information. Minor typos corrected in this version. Funding information: Marie Sklodowska-Curie Actions, H2020-MSCA-ITN-2020; Project Acronym SPEAR; Grant Agreement No. 955671

Journal ref: Nano Lett. 23, 4406-4414 (2023)

Magnon currents excited by the spin Seebeck effect in ferromagnetic EuS thin films

Authors: M. Xochitl Aguilar-Pujol, Sara Catalano, Carmen González-Orellana, Witold Skowronski, Juan M. Gómez-Pérez, Maxim Ilyn, Celia Rogero, Marco Gobbi, Luis E. Hueso, Fèlix Casanova

Abstract: A magnetic insulator is an ideal platform to propagate spin information by exploiting magnon currents. However, until now, most studies have focused on Y$_3$Fe$_5$O$_{12}$ (YIG) and a few other ferri- and antiferromagnetic insulators, but not on pure ferromagnets. In this study, we demonstrate for the first time that magnon currents can propagate in ferromagnetic insulating thin films of EuS. By p… ▽ More A magnetic insulator is an ideal platform to propagate spin information by exploiting magnon currents. However, until now, most studies have focused on Y$_3$Fe$_5$O$_{12}$ (YIG) and a few other ferri- and antiferromagnetic insulators, but not on pure ferromagnets. In this study, we demonstrate for the first time that magnon currents can propagate in ferromagnetic insulating thin films of EuS. By performing both local and non-local transport measurements in 18-nm-thick films of EuS using Pt electrodes, we detect magnon currents arising from thermal generation by the spin Seebeck effect. By comparing the dependence of the local and non-local signals with the temperature (< 30 K) and magnetic field (< 9 T), we confirm the magnon transport origin of the non-local signal. Finally, we extract the magnon diffusion length in the EuS film (~140 nm), a short value in good correspondence with the large Gilbert damping measured in the same film. △ Less

Submitted 14 November, 2023; v1 submitted 7 March, 2023; originally announced March 2023.

Comments: 17 pages, 5 figures, and Supplemental Material

Journal ref: Phys. Rev. B 108, 224420 (2023)

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

Authors: Diogo C. Vaz, Chia-Ching Lin, John J. Plombon, Won Young Choi, Inge Groen, Isabel C. Arango, Andrey Chuvilin, Luis E. Hueso, Dmitri E. Nikonov, Hai Li, Punyashloka Debashis, Scott B. Clendenning, Tanay A. Gosavi, Yen-Lin Huang, Bhagwati Prasad, Ramamoorthy Ramesh, Aymeric Vecchiola, Manuel Bibes, Karim Bouzehouane, Stephane Fusil, Vincent Garcia, Ian A. Young, Fèlix Casanova

Abstract: As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstra… ▽ More As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that upon the electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies. △ Less

Submitted 30 October, 2024; v1 submitted 23 February, 2023; originally announced February 2023.

Comments: 16 pages, 5 figures and Supplementary Information

Journal ref: Nature Communications 15, 1902 (2024)

Exchange bias in molecule/Fe3GeTe2 van der Waals heterostructures via spinterface effects

Authors: Junhyeon Jo, Francesco Calavalle, Beatriz Martín-García, Fèlix Casanova, Andrey Chuvilin, Luis E. Hueso, Marco Gobbi

Abstract: The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to tailor magnetic materials is molecular functionalization, which leads to hybrid interface states with peculiar magnetic p… ▽ More The exfoliation of layered magnetic materials generates atomically thin flakes characterized by an ultrahigh surface sensitivity, which makes their magnetic properties tunable via external stimuli, such as electrostatic gating and proximity effects. Another powerful approach to tailor magnetic materials is molecular functionalization, which leads to hybrid interface states with peculiar magnetic properties, called spinterfaces. However, spinterface effects have not yet been explored on layered magnetic materials. Here, we demonstrate the emergence of spinterface effects at the interface between flakes of the prototypical layered magnetic metal Fe3GeTe2 and thin films of paramagnetic Co-phthalocyanine. Magnetotransport measurements show that the molecular layer induces a magnetic exchange bias in Fe3GeTe2, indicating that the unpaired spins in Co-phthalocyanine develop antiferromagnetic ordering by proximity and pin the magnetization reversal of Fe3GeTe2. The effect is strongest for a Fe3GeTe2 thickness of 20 nm, for which the exchange bias field reaches -840 Oe and is measurable up to approximately 110 K. This value compares very favorably with previous exchange bias fields reported for Fe3GeTe2 in all-inorganic van der Waals heterostructures, demonstrating the potential of molecular functionalization to tailor the magnetism of van der Waals layered materials. △ Less

Submitted 24 February, 2023; v1 submitted 21 February, 2023; originally announced February 2023.

Journal ref: Adv. Mater. 34, 2200474 (2022)

Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction

Authors: Jakub Pawlak, Witold Skowroński, Piotr Kuświk, Félix Casanova, Marek Przybylski

Abstract: The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization precession of Co upon radio-frequency charge current injection. The utilization of a BTO ferroelectric tunnel barrier separating the Co and LSMO ferromagnetic el… ▽ More The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization precession of Co upon radio-frequency charge current injection. The utilization of a BTO ferroelectric tunnel barrier separating the Co and LSMO ferromagnetic electrodes gives rise to both tunneling-magnetoresistance and electroresistance. Using the spin-orbit torque ferromagnetic resonance, the maganetization dynamics of the Co/Pt bilayers was studied at room temperature. Unexpectedly the magnetization dynamics study in the same geometry performed at low temperature reveals the existence of both Co and LSMO resonance peaks indicating efficient spin current generation both using the spin Hall effect in Pt and spin pumping in LSMO that tunnel via the BTO barrier. △ Less

Submitted 1 January, 2023; originally announced January 2023.

Comments: 6 pages, 4 figures

Journal ref: Advanced Electronic Materials 9, 2300122 (2023)

Spin-to-charge conversion by spin pumping in sputtered polycrystalline Bi$_x$Se$_{1-x}$

Authors: Isabel C Arango, Alberto Anadón, Silvestre Novoa, Van Tuong Pham, Won Young Choi, Junior Alegre, Laurent Badie, Andrey Chuvilin, Sébastien Petit-Watelot, Luis E Hueso, Fèlix Casanova, Juan-Carlos Rojas-Sánchez

Abstract: Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin H… ▽ More Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin Hall angle. We study the spin-to-charge conversion in Bi$_x$Se$_{1-x}$ using the spin pumping technique coming from the ferromagnetic resonance in a contiguous permalloy thin film. We put a special emphasis on the interfacial properties of the system. Our results show that the spin Hall angle of Bi$_x$Se$_{1-x}$ has an opposite sign to the one of Pt. The charge current arising from the spin-to-charge conversion is, in contrast, lower than Pt by more than one order of magnitude. We ascribe this to the interdiffusion of Bi$_x$Se$_{1-x}$ and permalloy and the changes in chemical composition produced by this effect, which is an intrinsic characteristic of the system and is not considered in many other studies. △ Less

Submitted 16 June, 2023; v1 submitted 24 December, 2022; originally announced December 2022.

Journal ref: Phys. Rev. Materials 7, 075402 (2023)

Emergence of large spin-charge interconversion at an oxidized Cu/W interface

Authors: Inge Groen, Van Tuong Pham, Stefan Ilić, Won Young Choi, Andrey Chuvilin, Edurne Sagasta, Diogo C. Vaz, Isabel C. Arango, Nerea Ontoso, F. Sebastian Bergeret, Luis E. Hueso, Ilya V. Tokatly, Fèlix Casanova

Abstract: Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study t… ▽ More Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WO$_x$). We determine that the SCI occurs at the Cu/WO$_x$ interface with a temperature-independent interfacial spin-loss conductance of $G_{||} \approx$ 20 $\times$ 10$^{13} Ω^{-1}m^{-2}$ and an interfacial spin-charge conductivity $σ_{SC}=-$1610 $Ω^{-1}cm^{-1}$ at 10 K ($-$830 $Ω^{-1}cm^{-1}$ at 300 K). This corresponds to an efficiency given by the inverse Edelstein length $λ_{IEE}=-$0.76 nm at 10 K ($-$0.4 nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface is a promising candidate for the magnetic readout in MESO logic devices. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: 11 pages, 3 figures, and Supplemental Material

Journal ref: Phys. Rev. B 107, 184438 (2023)

Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures

Authors: Nerea Ontoso, C. K. Safeer, Franz Herling, Josep Ingla-Aynés, Haozhe Yang, Zhendong Chi, Iñigo Robredo, Maia G. Vergniory, Fernando de Juan, M. Reyes Calvo, Luis E. Hueso, Fèlix Casanova

Abstract: Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are those where the spin current, charge current and spin polarization directions are orthogonal to each other. Consequently, standard SCI experiments are designed… ▽ More Spin-charge interconversion (SCI) is a central phenomenon to the development of spintronic devices from materials with strong spin-orbit coupling (SOC). In the case of materials with high crystal symmetry, the only allowed SCI processes are those where the spin current, charge current and spin polarization directions are orthogonal to each other. Consequently, standard SCI experiments are designed to maximize the signals arising from the SCI processes with conventional mutually orthogonal geometry. However, in low-symmetry materials, certain non-orthogonal SCI processes are also allowed. Since the standard SCI experiment is limited to charge current flowing only in one direction in the SOC material, certain allowed SCI configurations remain unexplored. In this work, we performed a thorough SCI study in a graphene-based lateral spin valve combined with low-symmetry MoTe$_2$. Due to a very low contact resistance between the two materials, we could detect SCI signals using both a standard configuration, where the charge current is applied along the MoTe$_2$, and a recently introduced (3D-current) configuration, where the charge current flow can be controlled in three directions within the heterostructure. As a result, we observed three different SCI components, one orthogonal and two non-orthogonal, giving new insight into the SCI processes in low-symmetry materials. The large SCI signals obtained at room temperature, along with the versatility of the 3D-current configuration, provide feasibility and flexibility to the design of the next generation of spin-based devices. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: 11 pages, 4 figures

Journal ref: Phys. Rev. Applied 19, 014053 (2023)

All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$

Authors: Won Young Choi, Isabel C. Arango, Van Tuong Pham, Diogo C. Vaz, Haozhe Yang, Inge Groen, Chia-Ching Lin, Emily S. Kabir, Kaan Oguz, Punyashloka Debashis, John J. Plombon, Hai Li, Dmitri E. Nikonov, Andrey Chuvilin, Luis E. Hueso, Ian A. Young, Fèlix Casanova

Abstract: One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charg… ▽ More One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies is easily neglected or underestimated. Here, we demonstrate all electrical spin-to-charge conversion in Bi$_x$Se$_{1-x}$ nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed. △ Less

Submitted 18 October, 2022; originally announced October 2022.

Comments: Main text (18 pages, 3 figures, 2 tables) and supporting information (18 pages)

Journal ref: Nano Lett. 22, 7992-7999 (2022)

Charge-to-spin conversion in twisted graphene/WSe$_2$ heterostructures

Authors: Seungjun Lee, D. J. P. de Sousa, Young-Kyun Kwon, Fernando de Juan, Zhendong Chi, Fèlix Casanova, Tony Low

Abstract: We investigate the twist angle dependence of spin-orbit coupling (SOC) proximity effects and charge-to-spin conversion (CSC) in graphene/WSe$_2$ heterostructures from first principles. The CSC is shown to strongly depend on the twist angle, with both the spin Hall and standard Rashba-Edelstein efficiencies optimized at or near 30° twisting. Symmetry breaking due to twisting also gives rise to an u… ▽ More We investigate the twist angle dependence of spin-orbit coupling (SOC) proximity effects and charge-to-spin conversion (CSC) in graphene/WSe$_2$ heterostructures from first principles. The CSC is shown to strongly depend on the twist angle, with both the spin Hall and standard Rashba-Edelstein efficiencies optimized at or near 30° twisting. Symmetry breaking due to twisting also gives rise to an unconventional Rashba-Edelstein effect, with electrically generated non-equilibrium spin densities possessing spins collinear to the applied electric field. We further discuss how the carrier doping concentration and band broadening control the crossover between the Fermi-sea and -surface spin response, which reconciles the seemingly disparate experimental observations of different CSC phenomena. △ Less

Submitted 19 June, 2022; originally announced June 2022.

Comments: 5 pages, 4 figures, Supplementary Information (13 pages, 7 figures)

Journal ref: Phys. Rev. B 106, (2022) 165420

Omnidirectional spin-to-charge conversion in graphene/NbSe$_2$ van der Waals heterostructures

Authors: Josep Ingla-Aynés, Inge Groen, Franz Herling, Nerea Ontoso, C. K. Safeer, Fernando de Juan, Luis E. Hueso, Marco Gobbi, Fèlix Casanova

Abstract: The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by performing nonlocal spin precession experiments, we demonstrate the spin-to-charge conversion (SCC) of spins oriented in all three directions (x, y, and z). By… ▽ More The conversion of spin currents polarized in different directions into charge currents is a keystone for novel spintronic devices. Van der Waals heterostructures with tailored symmetry are a very appealing platform for such a goal. Here, by performing nonlocal spin precession experiments, we demonstrate the spin-to-charge conversion (SCC) of spins oriented in all three directions (x, y, and z). By analyzing the magnitude and temperature dependence of the signal in different configurations, we argue that the different SCC components measured are likely due to spin-orbit proximity and broken symmetry at the twisted graphene/NbSe$_2$ interface. Such efficient omnidirectional SCC opens the door to the use of new architectures in spintronic devices, from spin-orbit torques that can switch any magnetization to the magnetic state readout of magnetic elements pointing in any direction. △ Less

Submitted 16 May, 2022; originally announced May 2022.

Journal ref: 2D Mater. 9, 045001 (2022)

Spin Hall magnetoresistance effect from a disordered interface

Authors: Sara Catalano, Juan M. Gomez-Perez, M. Xochitl Aguilar-Pujol, Andrey Chuvilin, Marco Gobbi, Luis E. Hueso, Fèlix Casanova

Abstract: The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize Van der Waals magnetic materials, which support long range magnetic order in atomically thin layers. However, realistic surfaces can… ▽ More The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize Van der Waals magnetic materials, which support long range magnetic order in atomically thin layers. However, realistic surfaces can be affected by defects and disorder, which may result in unexpected artifacts in the SMR, rather than the sole appearance of electrical noise. Here, we study the SMR response of heterostructures combining a platinum (Pt) thin film with the Van der Waals antiferromagnet MnPSe3 and observe a robust SMR-like signal, which turns out to originate from the presence of strong interfacial disorder in the system. We use transmission electron microscopy (TEM) to characterize the interface between MnPSe3 and Pt, revealing the formation of a few-nanometer-thick platinum-chalcogen amorphous layer. The analysis of the transport and TEM measurements suggests that the signal arises from a disordered magnetic system formed at the Pt/MnPSe3 interface, washing out the interaction between the spins of the Pt electrons and the MnPSe3 magnetic lattice. Our results show that damaged interfaces can yield an important contribution to SMR, questioning a widespread assumption on the role of disorder in such measurements. △ Less

Submitted 11 February, 2022; originally announced February 2022.

Journal ref: ACS Appl. Mater. Interfaces 14, 8598-8604 (2022)

Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires

Authors: Francesco Calavalle, Manuel Suárez-Rodríguez, Beatriz Martín-García, Annika Johansson, Diogo C. Vaz, Haozhe Yang, Igor V. Maznichenko, Sergey Ostanin Aurelio Mateo-Alonso, Andrey Chuvilin, Ingrid Mertig, Marco Gobbi, Fèlix Casanova, Luis E. Hueso

Abstract: Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as… ▽ More Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as Tellurium are excellent electrical transport materials, but have not been explored to enable the electrical control of spin polarization in devices. Here, we demonstrate the all-electrical generation, manipulation, and detection of spin polarization in chiral single-crystalline Tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices. △ Less

Submitted 2 January, 2022; originally announced January 2022.

Journal ref: Nature Materials 21, 526-532 (2022)

Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves

Authors: C. K. Safeer, Franz Herling, Won Young Choi, Nerea Ontoso, Josep Ingla-Aynés, Luis E. Hueso, Fèlix Casanova

Abstract: Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and… ▽ More Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments. △ Less

Submitted 3 November, 2021; v1 submitted 9 September, 2021; originally announced September 2021.

Comments: 14 pages, 5 figures, Supplementary Information

Journal ref: 2D Mater. 9, 015024 (2022)

Large spin-charge interconversion induced by interfacial spin-orbit coupling in a highly conducting all-metallic system

Authors: Van Tuong Pham, Haozhe Yang, Won Young Choi, Alain Marty, Inge Groen, Andrey Chuvilin, F. Sebastian Bergeret, Luis E. Hueso, Ilya V. Tokatly, Fèlix Casanova

Abstract: Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has bee… ▽ More Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has been a common issue to properly quantify the spin-charge interconversion in these systems, being the case of Au paradigmatic. Here, we obtain a large spin-charge interconversion at a highly conducting Au/Cu interface which is experimentally shown to arise from the inverse spin galvanic effect of the interface and not from the spin Hall effect of bulk Au. We use two parameters independent of the microscopic details to properly quantify the spin-charge interconversion and the spin losses due to the interfacial spin-orbit coupling, providing an adequate benchmarking to compare with any spin-charge interconversion system. The good performance of this metallic interface, not based in Bi, opens the path to the use of much simpler light/heavy metal systems. △ Less

Submitted 27 June, 2024; v1 submitted 23 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. B 104, 184410 (2021)

Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature

Authors: Josep Ingla-Aynés, Franz Herling, Jaroslav Fabian, Luis E. Hueso, Fèlix Casanova

Abstract: The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic state… ▽ More The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic states in 2D materials provide unique control knobs to manipulate spin precession. Here, by manipulating the anisotropic spin-orbit coupling in bilayer graphene by the proximity effect to WSe$_2$, we achieve coherent spin precession in the absence of an external magnetic field, even in the diffusive regime. Remarkably, the sign of the precessing spin polarization can be tuned by a back gate voltage and by a drift current. Our realization of a spin field-effect transistor at room temperature is a cornerstone for the implementation of energy-efficient spin-based logic. △ Less

Submitted 27 June, 2021; originally announced June 2021.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. Lett. 127, 047202 (2021)

Disentangling spin, anomalous and planar Hall effects in ferromagnetic/heavy metal nanostructures

Authors: Inge Groen, Van Tuong Pham, Naëmi Leo, Alain Marty, Luis E. Hueso, Fèlix Casanova

Abstract: Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin H… ▽ More Ferromagnetic (FM)/heavy metal (HM) nanostructures can be used for the magnetic state readout in the proposed magneto-electric spin-orbit logic by locally injecting a spin-polarized current and measure the spin-to-charge conversion via the spin Hall effect. However, this local configuration is prone to spurious signals. In this work, we address spurious Hall effects that can contaminate the spin Hall signal in these FM/HM T-shaped nanostructures. The most pronounced Hall effects in our Co50Fe50/Pt nanostructures are the planar Hall effect and the anomalous Hall effect generated in the FM nanowire. We find that the planar Hall effect, induced by misalignment between magnetization and current direction in the FM wire, is manifested as a shift in the measured baseline resistance, but does not alter the spin Hall signal. In contrast, the anomalous Hall effect, arising from the charge current distribution within the FM, adds to the spin Hall signal. However, the effect can be made insignificant by minimizing the shunting effect via proper design of the device. We conclude that local spin injection in FM/HM nanostructures is a suitable tool for measuring spin Hall signals and, therefore, a valid method for magnetic state readout in prospective spin-based logic. △ Less

Submitted 6 March, 2021; originally announced March 2021.

Comments: 18 pages, 7 figures

Journal ref: Phys. Rev. Applied 15, 044010 (2021)

Tailoring Superconductivity in Large-Area Single-Layer NbSe2 via Self-Assembled Molecular Adlayers

Authors: Francesco Calavalle, Paul Dreher, Ananthu P. Surdendran, Wen Wan, Melanie Timpel, Roberto Verucchi, Celia Rogero, Thilo Bauch, Floriana Lombardi, Fèlix Casanova, Marco Vittorio Nardi, Miguel M. Ugeda, Luis E. Hueso, Marco Gobbi

Abstract: Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular functionalization. However, the impact of molecules on intrinsic physical properties of TMDs, such as superconductivity, remains largely unexplored. In this work, the critical… ▽ More Two-dimensional transition metal dichalcogenides (TMDs) represent an ideal testbench for the search of materials by design, because their optoelectronic properties can be manipulated through surface engineering and molecular functionalization. However, the impact of molecules on intrinsic physical properties of TMDs, such as superconductivity, remains largely unexplored. In this work, the critical temperature (TC) of large-area NbSe2 monolayers is manipulated, employing ultrathin molecular adlayers. Spectroscopic evidence indicates that aligned molecular dipoles within the self-assembled layers act as a fixed gate terminal, collectively generating a macroscopic electrostatic field on NbSe2. This results in an \sim 55\% increase and a 70\% decrease in TC depending on the electric field polarity, which is controlled via molecular selection. The reported functionalization, which improves the air stability of NbSe2, is efficient, practical, up-scalable, and suited to functionalize large-area TMDs. Our results indicate the potential of hybrid 2D materials as a novel platform for tunable superconductivity. △ Less

Submitted 7 December, 2020; originally announced December 2020.

Paramagnetic spin Hall magnetoresistance

Authors: Koichi Oyanagi, Juan M. Gomez-Perez, Xian-Peng Zhang, Takashi Kikkawa, Yao Chen, Edurne Sagasta, Andrey Chuvilin, Luis E. Hueso, Vitaly N. Golovach, F. Sebastian Bergeret, Fèlix Casanova, Eiji Saitoh

Abstract: Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been li… ▽ More Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins and magnetization at the interface. SMR has been used to read out information written in a small magnet and to detect magnetization dynamics, but it has been limited to magnets; magnetic ordered phases or instability of magnetic phase transition has been believed to be indispensable. Here, we report the observation of SMR in a paramagnetic insulator Gd$_{3}$Ga$_{5}$O$_{12}$ (GGG) without spontaneous magnetization combined with a Pt film. The paramagnetic SMR can be attributed to spin-transfer torque acting on localized spins in GGG. We determine the efficiencies of spin torque and spin-flip scattering at the Pt/GGG interface, and demonstrate these quantities can be tuned with external magnetic fields. The results clarify the mechanism of spin-transport at a metal/paramagnetic insulator interface, which gives new insight into the spintronic manipulation of spin states in paramagnetic systems. △ Less

Submitted 8 October, 2021; v1 submitted 6 August, 2020; originally announced August 2020.

Comments: 40 pages, 15 figures

Journal ref: Physical Review B 104, 134428 (2021)

Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions

Authors: Cristina Sanz-Fernández, Van Tuong Pham, Edurne Sagasta, Luis E. Hueso, Ilya V. Tokatly, Fèlix Casanova, F. Sebastián Bergeret

Abstract: We present and verify experimentally a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin-orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such sys… ▽ More We present and verify experimentally a universal theoretical framework for the description of spin-charge interconversion in non-magnetic metal/insulator structures with interfacial spin-orbit coupling (ISOC). Our formulation is based on drift-diffusion equations supplemented with generalized boundary conditions. The latter encode the effects of ISOC and relate the electronic transport in such systems to spin loss and spin-charge interconversion at the interface, which are parameterized, respectively, by $G_{\parallel/\perp}$ and $σ_{\rm{sc/cs}}$. We demonstrate that the conversion efficiency depends solely on these interfacial parameters. We apply our formalism to two typical spintronic devices that exploit ISOC: a lateral spin valve and a multilayer Hall bar, for which we calculate the non-local resistance and the spin Hall magnetoresistance, respectively. Finally, we perform measurements on these two devices with a BiO$_x$/Cu interface and verify that transport properties related to the ISOC are quantified by the same set of interfacial parameters. △ Less

Submitted 3 July, 2020; originally announced July 2020.

Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe$_2$

Authors: Franz Herling, C. K. Safeer, Josep Ingla-Aynés, Nerea Ontoso, Luis E. Hueso, Fèlix Casanova

Abstract: The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quan… ▽ More The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe$_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Comments: 12 pages, 4 figures, 1 table, Supplementary Material

Journal ref: APL Materials 8, 071103 (2020)

Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature

Authors: C. K. Safeer, Josep Ingla-Aynés, Nerea Ontoso, Franz Herling, Wenjing Yan, Luis E. Hueso, Fèlix Casanova

Abstract: Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition meta… ▽ More Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge current conversion phenomenon of technological relevance, it has sparked wide research interest. However, it has only been measured in graphene/transition metal dichalcogenide van der Waals heterostructures with limited scalability. Here, we experimentally demonstrate spin Hall effect up to room temperature in bilayer graphene combined with a nonmagnetic insulator, an evaporated bismuth oxide layer. The measured spin Hall effect raises most likely from an extrinsic mechanism. With a large spin-to-charge conversion efficiency, scalability, and ease of integration to electronic devices, we show a promising material heterostructure suitable for spin-based device applications. △ Less

Submitted 14 May, 2020; originally announced May 2020.

Comments: 12 pages, 4 figures, supporting information

Journal ref: Nano Lett. 20, 4573-4579 (2020)

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

Authors: Kaushik Bairagi, Sara Catalano, Francesco Calavalle, Elisabetta Zuccatti, Roger Llopis, Fèlix Casanova, Luis E. Hueso

Abstract: Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene. Here, we demonstrate the tuning of the ambipolar nature of the semiconductor polymer N2200 from Polyera ActiveInk by incorporat… ▽ More Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme thinness and flexibility of graphene. Here, we demonstrate the tuning of the ambipolar nature of the semiconductor polymer N2200 from Polyera ActiveInk by incorporating graphene electrodes in a transistor geometry. Our devices show a balanced ambipolar behavior with high current ON-OFF ratio and charge carrier mobilities. These effects are caused by both the effective energy barrier modulation and by the weak electric field screening effect at the graphene-polymer interface. Our results provide a strategy to integrate 2D graphene electrodes in ambipolar transistors in order to improve and modulate their characteristics, paving the way for the design of novel organic electronic devices. △ Less

Submitted 12 May, 2020; originally announced May 2020.

Comments: 16 pages, 4 figures, Accepted Manuscript

Journal ref: J. Mater. Chem. C, 2020

Room-temperature operation of a molecular spin photovoltaic device on a transparent substrate

Authors: Kaushik Bairagi, David Garcia Romero, Francesco Calavalle, Sara Catalano, Elisabetta Zuccatti, Roger Llopis, Fèlix Casanova, Luis E. Hueso

Abstract: Incorporating multifunctionality along with the spin-related phenomenon in a single device is of great interest for the development of next generation spintronic devices. One of these challenges is to couple the photo-response of the device together with its magneto-response to exploit the multifunctional operation at room temperature. Here, the multifunctional operation of a single layer p-type m… ▽ More Incorporating multifunctionality along with the spin-related phenomenon in a single device is of great interest for the development of next generation spintronic devices. One of these challenges is to couple the photo-response of the device together with its magneto-response to exploit the multifunctional operation at room temperature. Here, the multifunctional operation of a single layer p-type molecular spin valve is presented, where the device shows a photovoltaic effect at the room temperature on a transparent glass substrate. The generated photovoltage is almost three times larger than the applied bias to the device which facilitates the modulation of the magnetic response of the device both with bias and light. It is observed that the photovoltage modulation with light and magnetic field is linear with the light intensity. The device shows an increase in power conversion efficiency under magnetic field, an ability to invert the current with magnetic field and under certain conditions it can act as a spin-photodetector with zero power consumption in the standby mode. The room temperature exploitation of the interplay among light, bias and magnetic field in the single device with a p-type molecule opens a way towards more complex and efficient operation of a complete spin-photovoltaic cell. △ Less

Submitted 15 November, 2021; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 17 pages, 7 Figures, included supplementary

Journal ref: Adv. Mater. 2020, 32, 1906908

Top Dielectric Induced Ambipolarity in an n-channel dual-gated Organic Field Effect Transistor

Authors: Kaushik Bairagi, Elisabetta Zuccatti, Francesco Calavalle, Sara Catalano, Subir Parui, Roger Llopis, Frank Ortmann, Fèlix Casanova, Luis E. Hueso

Abstract: The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trapping or limited by the injection barrier with the electrodes. Here we show that only the pres… ▽ More The realization of both p-type and n-type operations in a single organic field effect transistor (OFET) is critical for simplifying the design of complex organic circuits. Typically, only p-type or n-type operation is realized in an OFET, while the respective counterpart is either suppressed by charge trapping or limited by the injection barrier with the electrodes. Here we show that only the presence of a top dielectric turns an n-type polymer semiconductor (N2200, Polyera ActiveInk) into an ambipolar one, as detected from both bottom and top gated OFET operation. The effect is independent of the channel thickness and the top dielectric combinations. Variable temperature transfer characteristics show that both the electrons and holes can be equally transported through the bulk of the polymer semiconductor. △ Less

Submitted 6 May, 2020; originally announced May 2020.

Comments: 16 pages, 3 figures

Journal ref: J. Mater. Chem. C, 2019,7, 10389-10393 J. Mater. Chem. C, 2019,7, 10389-10393 J. Mater. Chem. C, 2019,7, 10389-10393

Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance

Authors: Juan M. Gomez-Perez, Xian-Peng Zhang, Francesco Calavalle, Maxim Ilyn, Carmen González-Orellana, Marco Gobbi, Celia Rogero, Andrey Chuvilin, Vitaly N. Golovach, Luis E. Hueso, F. Sebastian Bergeret, Fèlix Casanova

Abstract: Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measu… ▽ More Spin-dependent transport at heavy metal/magnetic insulator interfaces is at the origin of many phenomena at the forefront of spintronics research. A proper quantification of the different interfacial spin conductances is crucial for many applications. Here, we report the first measurement of the spin Hall magnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS). We perform SMR measurements in a wide range of temperatures and fit the results by using a microscopic model. From this fitting procedure we obtain the temperature dependence of the spin conductances ($G_s$, $G_r$ and $G_i$), disentangling the contribution of field-like torque ($G_i$), damping-like torque ($G_r$), and spin-flip scattering ($G_s$). An interfacial exchange field of the order of 1 meV acting upon the conduction electrons of Pt can be estimated from $G_i$, which is at least three times larger than $G_r$ below the Curie temperature. Our work provides an easy method to quantify this interfacial spin-splitting field, which play a key role in emerging fields such as superconducting spintronics and caloritronics, and topological quantum computation. △ Less

Submitted 3 September, 2020; v1 submitted 24 April, 2020; originally announced April 2020.

Comments: 15 pages, 3 figures, Supporting information included at the end

Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures

Authors: Van Tuong Pham, Inge Groen, Sasikanth Manipatruni, Won Young Choi, Dmitri E. Nikonov, Edurne Sagasta, Chia-Ching Lin, Tanay Gosavi, Alain Marty, Luis E. Hueso, Ian Young, Fèlix Casanova

Abstract: Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experim… ▽ More Efficient detection of the magnetic state at nanoscale dimensions is an important step to utilize spin logic devices for computing. Magnetoresistance effects have been hitherto used in magnetic state detection, but they suffer from energetically unfavorable scaling and do not generate an electromotive force that can be used to drive a circuit element for logic device applications. Here, we experimentally show that a favorable miniaturization law is possible via the use of spin-Hall detection of the in-plane magnetic state of a magnet. This scaling law allows us to obtain a giant signal by spin Hall effect in CoFe/Pt nanostructures and quantify an effective spin-to-charge conversion rate for the CoFe/Pt system. The spin-to-charge conversion can be described as a current source with an internal resistance, i.e., it generates an electromotive force that can be used to drive computing circuits. We predict that the spin-orbit detection of magnetic states can reach high efficiency at reduced dimensions, paving the way for scalable spin-orbit logic devices and memories. △ Less

Submitted 24 February, 2020; originally announced February 2020.

Comments: 13 pages, 3 figures, Extended Data, Supplementary Information

Journal ref: Nature Electronics 3, 309-315 (2020)