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Quantum transport in an ambipolar InSb nanowire quantum dot device
Authors:
Mingtang Deng,
Chunlin Yu,
Guangyao Huang,
P. Caroff,
H. Q. Xu
Abstract:
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires, facilitating smooth transitions between the electron transport region and the hole transport region. In this study, we demonstrate quantum transport measurements…
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Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires, facilitating smooth transitions between the electron transport region and the hole transport region. In this study, we demonstrate quantum transport measurements obtained from a high-quality InSb nanowire quantum dot device. By utilizing a back gate, this device can be adjusted from an electron-populated quantum dot regime to a hole-populated one. Within both regimes, we have observed dozens of consecutive quantum levels without any charge rearrangement or impurity-induced interruptions. Our investigations in the electron transport regime have explored phenomena such as Coulomb blockade effect, Zeeman effect,and Kondo effect. Meanwhile, in the hole-transport regime, we have identified conductance peaks induced by lead states. Particularly, we have created a tomographic analysis method of these lead states by tracking the behavior of these conductance peaks across consecutive Coulomb diamond structures.
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Submitted 11 March, 2025; v1 submitted 30 October, 2024;
originally announced October 2024.
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Post-growth shaping and transport anisotropy in 2D InAs nanofins
Authors:
J. Seidl,
J. G. Gluschke,
X. Yuan,
H. H. Tan,
C. Jagadish,
P. Caroff,
A. P. Micolich
Abstract:
We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid based wet etch that enables complex shapes, e.g., van der Pauw cloverleaf structures, with patterning resolution down to 150 nm as well as partial thinning of the nanofin to improve the gate…
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We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid based wet etch that enables complex shapes, e.g., van der Pauw cloverleaf structures, with patterning resolution down to 150 nm as well as partial thinning of the nanofin to improve the gate response. We exploit the high sensitivity of the cloverleaf structures to transport anisotropy to address the fundamental question of whether there is a measurable transport anisotropy arising from wurtzite/zincblende polytypism in 2D InAs nanostructures. We demonstrate a mobility anisotropy of order 2-4 at room temperature arising from polytypic stacking faults in our nanofins. Our work highlights a key materials consideration for devices featuring self-assembled 2D III-V nanostructures using advanced epitaxy methods.
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Submitted 14 May, 2023;
originally announced May 2023.
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InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Authors:
Morteza Aghaee,
Arun Akkala,
Zulfi Alam,
Rizwan Ali,
Alejandro Alcaraz Ramirez,
Mariusz Andrzejczuk,
Andrey E Antipov,
Pavel Aseev,
Mikhail Astafev,
Bela Bauer,
Jonathan Becker,
Srini Boddapati,
Frenk Boekhout,
Jouri Bommer,
Esben Bork Hansen,
Tom Bosma,
Leo Bourdet,
Samuel Boutin,
Philippe Caroff,
Lucas Casparis,
Maja Cassidy,
Anna Wulf Christensen,
Noah Clay,
William S Cole,
Fabiano Corsetti
, et al. (102 additional authors not shown)
Abstract:
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca…
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We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
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Submitted 8 March, 2024; v1 submitted 6 July, 2022;
originally announced July 2022.
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Impact of invasive metal probes on Hall measurements in semiconductor nanostructures
Authors:
J. G. Gluschke,
J. Seidl,
H. H. Tan,
C. Jagadish,
P. Caroff,
A. P. Micolich
Abstract:
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that deviate significantly from the ideal of elongated Hall bars with currentless contacts. Many devices using these new materials have a low aspect ratio a…
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Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that deviate significantly from the ideal of elongated Hall bars with currentless contacts. Many devices using these new materials have a low aspect ratio and feature metal Hall probes that overlap with the semiconductor channel. This can lead to a significant distortion of the current flow. We present experimental data from InAs 2D nanofin devices with different Hall probe geometries to study the influence of Hall probe length and width. We use finite-element simulations to further understand the implications of these aspects and expand the scope to contact resistance and sample aspect ratios. Our key finding is that invasive probes lead to a significant underestimation in the measured Hall voltage, typically of the order of 40-80%. This in turn leads to a subsequent proportional overestimation of carrier concentration and an underestimation of mobility
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Submitted 19 October, 2020;
originally announced October 2020.
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Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy
Authors:
Seyyedesadaf Pournia,
Samuel Linser,
Giriraj Jnawali,
Howard E. Jackson,
Leigh M. Smith,
Amira Ameruddin,
Philippe Caroff,
Jennifer Wong-Leung,
Hark Hoe Tan,
Chennupati Jagadish,
Hannah J. Joyce
Abstract:
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with phot…
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We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is essential to the development of crystal phase engineering of this important III-V semiconductor.
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Submitted 18 February, 2020; v1 submitted 16 September, 2019;
originally announced September 2019.
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Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy
Authors:
J. Seidl,
J. G. Gluschke,
X. Yuan,
S. Naureen,
N. Shahid,
H. H. Tan,
C. Jagadish,
A. P. Micolich,
P. Caroff
Abstract:
We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growt…
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We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and four-terminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density $2.5~-~5 \times 10^{17}$ cm$^{-3}$, corresponding to an approximate surface accumulation layer density $3~-~6 \times 10^{12}$ cm$^{-2}$ that agrees well with previous studies of InAs nanowires. We obtain Hall mobilities as high as $1200$ cm$^{2}$/Vs, field-effect mobilities as high as $4400$ cm$^{2}$/Vs and clear quantum interference structure at temperatures as high as $20$ K. Our devices show excellent prospects for fabrication into more complicated devices featuring multiple ohmic contacts, local gates and possibly other functional elements, e.g., patterned superconductor contacts, that may make them attractive options for future quantum information applications.
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Submitted 28 June, 2019;
originally announced July 2019.
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Strong Hot Carrier Effects Observed in a Single Nanowire Heterostructure
Authors:
Iraj Abbasian Shojaei,
Samuel Linser,
Giriraj Jnawali,
N. Wickramasuriya,
Howard E. Jackson,
Leigh M. Smith,
Fariborz Kargar,
Alexander A. Balandin,
Xiaoming Yuan,
Philip Caroff,
H. Hoe Tan,
Chennupati Jagadish
Abstract:
We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatu…
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We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatures leading to strong hot carrier effects.
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Submitted 16 September, 2019; v1 submitted 29 October, 2018;
originally announced October 2018.
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p-GaAs nanowire MESFETs with near-thermal limit gating
Authors:
A. R. Ullah,
F. Meyer,
J. G. Gluschke,
S. Naureen,
P. Caroff,
P. Krogstrup,
J. Nygard,
A. P. Micolich
Abstract:
Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our d…
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Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire metal-semiconductor field-effect transistor (MESFET) that eliminates the need for a gate insulator by exploiting the Schottky barrier at the metal-GaAs interface. Our device beats the best-performing p-GaSb nanowire metal-oxide-semiconductor field effect transistor (MOSFET), giving a typical sub-threshold swing of 62 mV/dec, within 4% of the thermal limit, on-off ratio $\sim 10^{5}$, on-resistance ~700 k$Ω$, contact resistance ~30 k$Ω$, peak transconductance 1.2 $μ$S/$μ$m and high-fidelity ac operation at frequencies up to 10 kHz. The device consists of a GaAs nanowire with an undoped core and heavily Be-doped shell. We carefully etch back the nanowire at the gate locations to obtain Schottky-barrier insulated gates whilst leaving the doped shell intact at the contacts to obtain low contact resistance. Our device opens a path to all-GaAs nanowire MESFET complementary circuits with simplified fabrication and improved performance.
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Submitted 27 September, 2018;
originally announced September 2018.
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Anomalous negative magnetoresistance in quantum-dot Josephson junctions with Kondo correlations
Authors:
M. -T. Deng,
C. -L. Yu,
G. -Y. Huang,
R. Lopez,
P. Caroff,
S. G. Ghalamestani,
G. Platero,
H. Q. Xu
Abstract:
The interplay between superconductivity and the Kondo effect has stimulated significant interest in condensed matter physics. They compete when their critical temperatures are close and can give rise to a quantum phase transition that can mimic Majorana zero modes. Here, we have fabricated and measured Al-InSb nanowire quantum dot-Al devices. In the Kondo regime, a supercurrent- induced zero-bias…
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The interplay between superconductivity and the Kondo effect has stimulated significant interest in condensed matter physics. They compete when their critical temperatures are close and can give rise to a quantum phase transition that can mimic Majorana zero modes. Here, we have fabricated and measured Al-InSb nanowire quantum dot-Al devices. In the Kondo regime, a supercurrent- induced zero-bias conductance peak emerges. This zero-bias peak shows an anomalous negative magnetoresistance (NMR) at weak magnetic fields. We attribute this anomalous NMR to quasi- particle trapping at vortices in the superconductor leads as a weak magnetic field is applied. The trapping effect lowers the quasiparticle-caused dissipation and thus enhances the Josephson current. This work connects the vortex physics and the supercurrent tunneling in Kondo regimes and can help further understand the physics of Josephson quantum dot system.
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Submitted 19 March, 2024; v1 submitted 21 August, 2018;
originally announced August 2018.
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Study of 0-$π$ phase transition in hybrid superconductor-InSb nanowire quantum dot devices
Authors:
S. Li,
N. Kang,
P. Caroff,
H. Q. Xu
Abstract:
Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusinov (YSR) states, and the Majorana bound states. The competition between Kondo correlations and superconductivity in Josephson quantum dot (QD) devices results in two different ground states and the occurrence of a 0-…
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Hybrid superconductor-semiconducting nanowire devices provide an ideal platform to investigating novel intragap bound states, such as the Andreev bound states (ABSs), Yu-Shiba-Rusinov (YSR) states, and the Majorana bound states. The competition between Kondo correlations and superconductivity in Josephson quantum dot (QD) devices results in two different ground states and the occurrence of a 0-$π$ quantum phase transition. Here we report on transport measurements on hybrid superconductor-InSb nanowire QD devices with different device geometries. We demonstrate a realization of continuous gate-tunable ABSs with both 0-type levels and $π$-type levels. This allow us to manipulate the transition between 0 and $π$ junction and explore charge transport and spectrum in the vicinity of the quantum phase transition regime. Furthermore, we find a coexistence of 0-type ABS and $π$-type ABS in the same charge state. By measuring temperature and magnetic field evolution of the ABSs, the different natures of the two sets of ABSs are verified, being consistent with the scenario of phase transition between the singlet and doublet ground state. Our study provides insights into Andreev transport properties of hybrid superconductor-QD devices and sheds light on the crossover behavior of the subgap spectrum in the vicinity of 0-$π$ transition.
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Submitted 29 December, 2016;
originally announced December 2016.
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Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions
Authors:
S. Li,
N. Kang,
D. X. Fan,
L. B. Wang,
Y. Q. Huang,
P. Caroff,
H. Q. Xu
Abstract:
Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson juncti…
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Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics.
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Submitted 6 April, 2016;
originally announced April 2016.
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Formation of Long Single Quantum Dots in High Quality InSb Nanowires Grown by Molecular Beam Epitaxy
Authors:
Dingxun Fan,
Sen Li,
N. Kang,
Philippe Caroff,
L. B. Wang,
Y. Q. Huang,
M. T. Deng,
C. L. Yu,
H. Q. Xu
Abstract:
We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO$_2$ substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and th…
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We report on realization and transport spectroscopy study of single quantum dots (QDs) made from InSb nanowires grown by molecular beam epitaxy (MBE). The nanowires employed are 50-80 nm in diameter and the QDs are defined in the nanowires between the source and drain contacts on a Si/SiO$_2$ substrate. We show that highly tunable QD devices can be realized with the MBE-grown InSb nanowires and the gate-to-dot capacitance extracted in the many-electron regimes is scaled linearly with the longitudinal dot size, demonstrating that the devices are of single InSb nanowire QDs even with a longitudinal size of ~700 nm. In the few-electron regime, the quantum levels in the QDs are resolved and the Landé g-factors extracted for the quantum levels from the magnetotransport measurements are found to be strongly level-dependent and fluctuated in a range of 18-48. A spin-orbit coupling strength is extracted from the magnetic field evolutions of a ground state and its neighboring excited state in an InSb nanowire QD and is on the order of ~300 $μ$eV. Our results establish that the MBE-grown InSb nanowires are of high crystal quality and are promising for the use in constructing novel quantum devices, such as entangled spin qubits, one-dimensional Wigner crystals and topological quantum computing devices.
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Submitted 13 August, 2015;
originally announced August 2015.
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Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device
Authors:
M. T. Deng,
C. L. Yu,
G. Y. Huang,
M. Larsson,
P. Caroff,
H. Q. Xu
Abstract:
We explore the signatures of Majorana fermions in a nanowire based topological superconductor-quantum dot-topological superconductor hybrid device by charge transport measurements. The device is made from an epitaxially grown InSb nanowire with two superconductor Nb contacts on a Si/SiO$_2$ substrate. At low temperatures, a quantum dot is formed in the segment of the InSb nanowire between the two…
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We explore the signatures of Majorana fermions in a nanowire based topological superconductor-quantum dot-topological superconductor hybrid device by charge transport measurements. The device is made from an epitaxially grown InSb nanowire with two superconductor Nb contacts on a Si/SiO$_2$ substrate. At low temperatures, a quantum dot is formed in the segment of the InSb nanowire between the two Nb contacts and the two Nb contacted segments of the InSb nanowire show superconductivity due to the proximity effect. At zero magnetic field, well defined Coulomb diamonds and the Kondo effect are observed in the charge stability diagram measurements in the Coulomb blockade regime of the quantum dot. Under the application of a finite, sufficiently strong magnetic field, a zero-bias conductance peak structure is observed in the same Coulomb blockade regime. It is found that the zero-bias conductance peak is present in many consecutive Coulomb diamonds, irrespective of the even-odd parity of the quasi-particle occupation number in the quantum dot. In addition, we find that the zero-bias conductance peak is in most cases accompanied by two differential conductance peaks, forming a triple-peak structure, and the separation between the two side peaks in bias voltage shows oscillations closely correlated to the background Coulomb conductance oscillations of the device. The observed zero-bias conductance peak and the associated triple-peak structure are in line with the signatures of Majorana fermion physics in a nanowire based topological superconductor-quantum dot-topological superconductor system, in which the two Majorana bound states adjacent to the quantum dot are hybridized into a pair of quasi-particle states with finite energies and the other two Majorana bound states remain as the zero-energy modes located at the two ends of the entire InSb nanowire.
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Submitted 12 June, 2014;
originally announced June 2014.
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Magneto-transport Subbands Spectroscopy in InAs Nanowires
Authors:
Florian Vigneau,
Vladimir Prudkovkiy,
Ivan Duchemin,
Walter Escoffier,
Philippe Caroff,
Yann-Michel Niquet,
Renaud Leturcq,
Michel Goiran,
Bertrand Raquet
Abstract:
We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic…
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We report on magneto-transport measurements in InAs nanowires under large magnetic field (up to 55T), providing a direct spectroscopy of the 1D electronic band structure. Large modulations of the magneto-conductance mediated by an accurate control of the Fermi energy reveal the Landau fragmentation, carrying the fingerprints of the confined InAs material. Our numerical simulations of the magnetic band structure consistently support the experimental results and reveal key parameters of the electronic confinement.
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Submitted 13 November, 2013;
originally announced November 2013.
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Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
Authors:
Chloé Rolland,
Philippe Caroff,
Christophe Coinon,
Xavier Wallart,
Renaud Leturcq
Abstract:
We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire face…
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We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements showing an increase of the electron density with the Si flux. We also observe an increase of the electron density along the nanowires from the tip to the base, attributed to the dopant incorporation on the nanowire facets whereas no detectable incorporation occurs through the seed. Furthermore the Si incorporation strongly influences the lateral growth of the nanowires without giving rise to significant tapering, revealing the complex interplay between axial and lateral growth.
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Submitted 8 July, 2013;
originally announced July 2013.
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Persistent enhancement of the carrier density in electron irradiated InAs nanowires
Authors:
Corentin Durand,
Maxime Berthe,
Younes Makoudi,
Jean-Philippe Nys,
Renaud Leturcq,
Philippe Caroff,
Bruno Grandidier
Abstract:
We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to…
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We report a significant and persistent enhancement of the conductivity in free-standing non intentionnaly doped InAs nanowires upon irradiation in ultra high vacuum. Combining four-point probe transport measurements performed on nanowires with different surface chemistries, field-effect based measurements and numerical simulations of the electron density, the change of the conductivity is found to be caused by the increase of the surface free carrier concentration. Although an electron beam of a few keV, typically used for the inspection and the processing of materials, propagates through the entire nanowire cross-section, we demonstrate that the nanowire electrical properties are predominantly affected by radiation-induced defects occuring at the nanowire surface and not in the bulk.
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Submitted 2 April, 2013;
originally announced April 2013.
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Superconductor-Nanowire Devices from Tunneling to the Multichannel Regime: Zero-Bias Oscillations and Magnetoconductance Crossover
Authors:
H. O. H. Churchill,
V. Fatemi,
K. Grove-Rasmussen,
M. T. Deng,
P. Caroff,
H. Q. Xu,
C. M. Marcus
Abstract:
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and split away from zero bias as a function of magnetic field and gate voltage. A crossover in magnetoconductance is observed: Magnetic fields above ~ 0.5 T enhance c…
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We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and split away from zero bias as a function of magnetic field and gate voltage. A crossover in magnetoconductance is observed: Magnetic fields above ~ 0.5 T enhance conductance in the low-conductance (tunneling) regime but suppress conductance in the high-conductance (multichannel) regime. We consider these results in the context of Majorana zero modes as well as alternatives, including Kondo effect and analogs of 0.7 structure in a disordered nanowire.
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Submitted 10 March, 2013;
originally announced March 2013.
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Observation of Majorana Fermions in a Nb-InSb Nanowire-Nb Hybrid Quantum Device
Authors:
M. T. Deng,
C. L. Yu,
G. Y. Huang,
M. Larsson,
P. Caroff,
H. Q. Xu
Abstract:
We report on the observation of excitation of Majorana fermions in a Nb-InSb nanowire quantum dot-Nb hybrid system. The InSb nanowire quantum dot is formed between the two Nb contacts by weak Schottky barriers and is thus in the regime of strong couplings to the contacts. Due to the proximity effect, the InSb nanowire segments covered by superconductor Nb contacts turn to superconductors with a su…
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We report on the observation of excitation of Majorana fermions in a Nb-InSb nanowire quantum dot-Nb hybrid system. The InSb nanowire quantum dot is formed between the two Nb contacts by weak Schottky barriers and is thus in the regime of strong couplings to the contacts. Due to the proximity effect, the InSb nanowire segments covered by superconductor Nb contacts turn to superconductors with a superconducting energy gap $Δ^*$. Under an applied magnetic field larger than a critical value for which the Zeeman energy in the InSb nanowire is $E_z\sim Δ^*$, the entire InSb nanowire is found to be in a nontrivial topological superconductor phase, supporting a pair of Majorana fermions, and Cooper pairs can transport between the superconductor Nb contacts via the Majorana fermion states. This transport process will be suppressed when the applied magnetic field becomes larger than a second critical value at which the transition to a trivial topological superconductor phase occurs in the system. This physical scenario has been observed in our experiment. We have found that the measured zero-bias conductance for our hybrid device shows a conductance plateau in a range of the applied magnetic field in quasi-particle Coulomb blockade regions.
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Submitted 18 April, 2012;
originally announced April 2012.
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Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction
Authors:
H. A. Nilsson,
P. Samuelsson,
P. Caroff,
H. Q. Xu
Abstract:
Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices, and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an In…
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Epitaxially grown, high quality semiconductor InSb nanowires are emerging material systems for the development of high performance nanoelectronics and quantum information processing and communication devices, and for the studies of new physical phenomena in solid state systems. Here, we report on measurements of a superconductor-normal conductor-superconductor junction device fabricated from an InSb nanowire with aluminum based superconducting contacts. The measurements show a proximity induced supercurrent flowing through the InSb nanowire segment, with a critical current tunable by a gate, in the current bias configuration and multiple Andreev reflection characteristics in the voltage bias configuration. The temperature dependence and the magnetic field dependence of the critical current and the multiple Andreev reflection characteristics of the junction are also studied. Furthermore, we extract the excess current from the measurements and study its temperature and magnetic field dependences. The successful observation of the superconductivity in the InSb nanowire based Josephson junction device indicates that InSb nanowires provide an excellent material system for creating and observing novel physical phenomena such as Majorana fermions in solid state systems.
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Submitted 17 April, 2012;
originally announced April 2012.
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Correlation-induced conductance suppression at level degeneracy in a quantum dot
Authors:
H. A. Nilsson,
O. Karlström,
M. Larsson,
P. Caroff,
J. N. Pedersen,
L. Samuelson,
A. Wacker,
L. E. Wernersson,
H. Q. Xu
Abstract:
The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing of the conductance is found at the alignment of levels with equal spins. This conductance suppress…
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The large, level-dependent g-factors in an InSb nanowire quantum dot allow for the occurrence of a variety of level crossings in the dot. While we observe the standard conductance enhancement in the Coulomb blockade region for aligned levels with different spins due to the Kondo effect, a vanishing of the conductance is found at the alignment of levels with equal spins. This conductance suppression appears as a canyon cutting through the web of direct tunneling lines and an enclosed Coulomb blockade region. In the center of the Coulomb blockade region, we observe the predicted correlation-induced resonance, which now turns out to be part of a larger scenario. Our findings are supported by numerical and analytical calculations.
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Submitted 6 May, 2010; v1 submitted 11 November, 2009;
originally announced November 2009.
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Controlled growth of InAs nanowires on engineered substrates
Authors:
Stefano Roddaro,
Philippe Caroff,
Giorgio Biasiol,
Francesca Rossi,
Claudio Bocchi,
Kristian Nilsson,
Linus Fröberg,
Jakob B. Wagner,
Lars Samuelson,
Lars-Erik Wernersson,
Lucia Sorba
Abstract:
We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam epitaxy and a $2 {\rm μm}$-thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires a…
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We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam epitaxy and a $2 {\rm μm}$-thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures.
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Submitted 24 March, 2009;
originally announced March 2009.
