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Using Electrical Impedance Spectroscopy to Separately Quantify the Effect of Strain on Nanosheet and Junction Resistance in Printed Nanosheet Networks
Authors:
Eoin Caffrey,
Tian Carey,
Luke Doolan,
Anthony Dawson,
Emmet Coleman,
Zdenek Sofer,
Oran Cassidy,
Cian Gabbett,
Jonathan N. Coleman
Abstract:
Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding of the effect of strain on the electrical properties of nano-networks. Here we introduce novel AC electrical techniques to fully characterise the effect of strai…
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Many printed electronic applications require strain-independent electrical properties to ensure deformation-independent performance. Thus, developing printed, flexible devices using 2D and other nanomaterials will require an understanding of the effect of strain on the electrical properties of nano-networks. Here we introduce novel AC electrical techniques to fully characterise the effect of strain on the resistance of high mobility printed networks, fabricated from of electrochemically exfoliated MoS2 nanosheets. These devices were initially characterised using DC piezoresistance measurements and showed good cyclability and a linear strain response, consistent with a low gauge factor of G~3. However, AC impedance spectroscopy measurements, performed as a function of strain, allowed the measurement of the effects of strain on both the nanosheets and the inter-nanosheet junctions separately. The junction resistance was found to increase linearly with strain, while the nanosheet resistance remained constant. This response is consistent with strain-induced sliding of the highly-aligned nanosheets past one another, without any strain being transferred to the sheets themselves. Our approach allows us to individually estimate the contributions of dimensional factors (G~1.4) and intrinsic factors (G~1.9) to the total gauge factor. This novel technique may provide insight into other piezoresistive systems.
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Submitted 25 October, 2024;
originally announced October 2024.
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Production of Ultra-Thin and High-Quality Nanosheet Networks via Layer-by-Layer Assembly at Liquid-Liquid Interfaces
Authors:
Joseph Neilson,
Eoin Caffrey,
Oran Cassidy,
Cian Gabbett,
Kevin Synnatchke,
Eileen Schneider,
Jose M. Munuera,
Tian Carey,
Max Rimmer,
Zdenek Sofer,
Janina Maultzsch,
Sarah J. Haigh,
Jonathan N. Coleman
Abstract:
Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximising their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (μNet) as close as possible to that of individual nanosheets (μNS). In practise, the presence of inter-nanosheet junctions generally limits electronic conduction,…
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Solution-processable 2D materials are promising candidates for a range of printed electronics applications. Yet maximising their potential requires solution-phase processing of nanosheets into high-quality networks with carrier mobility (μNet) as close as possible to that of individual nanosheets (μNS). In practise, the presence of inter-nanosheet junctions generally limits electronic conduction, such that the ratio of junction resistance (RJ) to nanosheet resistance (RNS), determines the network mobility via . Hence, achieving RJ/RNS<1 is a crucial step for implementation of 2D materials in printed electronics applications. In this work, we utilise an advanced liquid-interface deposition process to maximise nanosheet alignment and network uniformity, thus reducing RJ. We demonstrate the approach using graphene and MoS2 as model materials, achieving low RJ/RNS values of 0.5 and 0.2, respectively. The resultant graphene networks show a high conductivity of σNet = 5 \times 104 S/m while our semiconducting MoS2 networks demonstrate record mobility of μNet = 30 cm2/Vs, both at extremely low network thickness (tNet <10 nm). Finally, we show that the deposition process is compatible with non-layered quasi-2D materials such as silver nanosheets (AgNS), achieving network conductivity close to bulk silver for networks <100 nm thick. We believe this work is the first to report nanosheet networks with RJ/RNS<1 and serves to guide future work in 2D materials-based printed electronics.
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Submitted 22 October, 2024;
originally announced October 2024.
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Quantifying the contribution of material and junction resistances in nano-networks
Authors:
Cian Gabbett,
Adam G. Kelly,
Emmet Coleman,
Luke Doolan,
Tian Carey,
Kevin Synnatschke,
Shixin Liu,
Anthony Dawson,
Domhnall OSuilleabhain,
Jose Munuera,
Eoin Caffrey,
John B. Boland,
Zdenek Sofer,
Goutam Ghosh,
Sachin Kinge,
Laurens D. A. Siebbeles,
Neelam Yadav,
Jagdish K. Vij,
Muhammad Awais Aslam,
Aleksandar Matkovic,
Jonathan N. Coleman
Abstract:
Networks of nanowires and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the inter-particle junction resistance, a property that is challenging to minimise because it is difficult to measure. Here, we develop a simple model for conduction in networks of 1D or 2D nanomaterials, which allows us to extract j…
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Networks of nanowires and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the inter-particle junction resistance, a property that is challenging to minimise because it is difficult to measure. Here, we develop a simple model for conduction in networks of 1D or 2D nanomaterials, which allows us to extract junction and nanoparticle resistances from particle-size-dependent D.C. resistivity data of conducting and semiconducting materials. We find junction resistances in porous networks to scale with nanoparticle resistivity and vary from 5 Ohm for silver nanosheets to 25 GOhm for WS2 nanosheets. Moreover, our model allows junction and nanoparticle resistances to be extracted from A.C. impedance spectra of semiconducting networks. Impedance data links the high mobility (~7 cm2/Vs) of aligned networks of electrochemically exfoliated MoS2 nanosheets to low junction resistances of ~670 kOhm. Temperature-dependent impedance measurements allow us to quantitatively differentiate intra-nanosheet phonon-limited band-like transport from inter-nanosheet hopping for the first time.
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Submitted 28 November, 2023;
originally announced November 2023.
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Knot Architecture for Biocompatible and Semiconducting Two-Dimensional Electronic Fibre Transistors
Authors:
Tian Carey,
Jack Maughan,
Luke Doolan,
Eoin Caffrey,
James Garcia,
Shixin Liu,
Harneet Kaur,
Cansu Ilhan,
Shayan Seyedin,
Jonathan N. Coleman
Abstract:
In recent years, the rising demand for close interaction with electronic devices has led to a surge in the popularity of wearable gadgets. While wearable gadgets have generally been rigid due to their utilisation of silicon-based technologies, flexible semiconducting fibre-based transistors will be needed for future wearables as active sensing components or within microprocessors to manage and ana…
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In recent years, the rising demand for close interaction with electronic devices has led to a surge in the popularity of wearable gadgets. While wearable gadgets have generally been rigid due to their utilisation of silicon-based technologies, flexible semiconducting fibre-based transistors will be needed for future wearables as active sensing components or within microprocessors to manage and analyse data. Two-dimensional (2D) semiconducting flakes are yet to be investigated in fibre transistors but could offer a route toward high-mobility, biocompatible and flexible fibre-based devices. Here we report the electrochemical exfoliation of semiconducting two-dimensional (2D) flakes of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2). The high aspect ratio (>100) of the flakes achieves aligned and conformal flake-to-flake junctions on polyester fibres enabling transistors with mobilities ~ 1 cm^2 V^-1 s^-1 and a current on/off ratio, Ion/Ioff ~ 10^2 - 10^4. Furthermore, the cytotoxic effects of the MoS2 and WSe2 flakes with human keratinocyte cells are investigated and found to be biocompatible. As an additional step, we create a unique transistor knot architecture by leveraging the fibre diameter to establish the length of the transistor channel, facilitating a route to scale down transistor channel dimensions (100 μm) and utilise it to make MoS2 fibre transistors with a human hair that achieves mobilities as high as μ ~ 15 cm^2 V^-1 s^-1.
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Submitted 4 November, 2023;
originally announced November 2023.
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Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics
Authors:
Tian Carey,
Adrees Arbab,
Luca Anzi,
Helen Bristow,
Fei Hui,
Sivasambu Bohm,
Gwenhivir Wyatt-Moon,
Andrew Flewitt,
Andrew Wadsworth,
Nicola Gasparini,
Jong Min Kim,
Mario Lanza,
Iain McCulloch,
Roman Sordan,
Felice Torrisi
Abstract:
Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type moly…
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Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-dimensional materials have the potential to enable the next generation of high performance, low-cost printed digital electronics. Here we demonstrate air-stable, low voltage (< 5 V) operation of inkjet-printed n-type molybdenum disulfide (MoS2) and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating a switching time of τ ~ 3.3 μs for the MoS2 FETs. We achieve this by engineering high-quality MoS2 and air-stable IDT-BT inks suitable for inkjet-printing complementary pairs of n-type MoS2 and p-type IDT-BT FETs. We then integrate MoS2 and IDT-BT FETs to realise inkjet-printed complementary logic inverters with a voltage gain |Av| ~ 4 when in resistive load configuration and |Av| ~ 1.36 in complementary configuration. These results represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.
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Submitted 24 November, 2020;
originally announced November 2020.
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Terahertz frequency combs exploiting an on-chip solution processed graphene-quantum cascade laser coupled-cavity architecture
Authors:
F. P. Mezzapesa,
K. Garrasi,
J. Schmidt,
L. Salemi,
V. Pistore,
L. Li,
A. G. Davies,
E. H. Linfield,
M. Riesch,
C. Jirauschek,
T. Carey,
F. Torrisi,
A. C. Ferrari,
M. S. Vitiello
Abstract:
The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersu…
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The ability to engineer quantum-cascade-lasers (QCLs) with ultrabroad gain spectra and with a full compensation of the group velocity dispersion, at Terahertz (THz) frequencies, is a fundamental need for devising monolithic and miniaturized optical frequency-comb-synthesizers (FCS) in the far-infrared. In a THz QCL four-wave mixing, driven by the intrinsic third-order susceptibility of the intersubband gain medium, self-lock the optical modes in phase, allowing stable comb operation, albeit over a restricted dynamic range (~ 20% of the laser operational range). Here, we engineer miniaturized THz FCSs comprising a heterogeneous THz QCL integrated with a tightly-coupled on-chip solution-processed graphene saturable-absorber reflector that preserves phase-coherence between lasing modes even when four-wave mixing no longer provides dispersion compensation. This enables a high-power (8 mW) FCS with over 90 optical modes to be demonstrated, over more than 55% of the laser operational range. Furthermore, stable injection-locking is showed, paving the way to impact a number of key applications, including high-precision tuneable broadband-spectroscopy and quantum-metrology.
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Submitted 23 November, 2020;
originally announced November 2020.
