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Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM
Authors:
Tiffany S. Santos,
Goran Mihajlovic,
Neil Smith,
J. -L. Li,
Matthew Carey,
Jordan A. Katine,
Bruce D. Terris
Abstract:
The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $αM_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thicknes…
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The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $αM_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thickness, W in our case, and also splitting the single W layer into two layers of sub-monolayer thickness, we have reduced $t_F$ while minimizing $α$ and maximizing $M_S$, ultimately leading to lower $J_{c0}$ while maintaining high thermal stability. Bottom-pinned MRAM cells with device diameter in the range of 55-130 nm were fabricated, and $J_{c0}$ is lowest for the thinnest (1.2 nm) FLs, down to 4 MA/cm$^2$ for 65 nm devices, $\sim$30% lower than 1.7 nm FLs. The thermal stability factor $Δ_{\mathrm{dw}}$, as high as 150 for the smallest device size, was determined using a domain wall reversal model from field switching probability measurements. With high $Δ_{\mathrm{dw}}$ and lowest $J_{c0}$, the thinnest FLs have the highest spin-transfer torque efficiency.
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Submitted 4 August, 2020;
originally announced August 2020.
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Origin of the resistance-area product dependence of spin transfer torque switching in perpendicular magnetic random access memory cells
Authors:
Goran Mihajlovic,
Neil Smith,
Tiffany Santos,
Jui-Lung Li,
Michael Tran,
Matthew Carey,
Bruce D. Terris,
Jordan A. Katine
Abstract:
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT), current induced self-heating and voltage controlled magnetic anisotropy also contribute to switching and can explain the RA dependencies of switching current density…
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We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT), current induced self-heating and voltage controlled magnetic anisotropy also contribute to switching and can explain the RA dependencies of switching current density and STT efficiency. Our findings suggest that thermal optimization of perpendicular MRAM cells can result in significant reduction of switching currents.
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Submitted 7 May, 2019;
originally announced May 2019.
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Insights into ultrafast demagnetization in pseudo-gap half metals
Authors:
Andreas Mann,
Jakob Walowski,
Markus Münzenberg,
Stefan Maat,
Matthew J. Carey,
Jeffrey R. Childress,
Claudia Mewes,
Daniel Ebke,
Volker Drewello,
Günter Reiss,
Andy Thomas
Abstract:
Interest in femtosecond demagnetization experiments was sparked by Bigot's discovery in 1995. These experiments unveil the elementary mechanisms coupling the electrons' temperature to their spin order. Even though first quantitative models describing ultrafast demagnetization have just been published within the past year, new calculations also suggest alternative mechanisms. Simultaneously, the ap…
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Interest in femtosecond demagnetization experiments was sparked by Bigot's discovery in 1995. These experiments unveil the elementary mechanisms coupling the electrons' temperature to their spin order. Even though first quantitative models describing ultrafast demagnetization have just been published within the past year, new calculations also suggest alternative mechanisms. Simultaneously, the application of fast demagnetization experiments has been demonstrated to provide key insight into technologically important systems such as high spin polarization metals, and consequently there is broad interest in further understanding the physics of these phenomena. To gain new and relevant insights, we perform ultrafast optical pump-probe experiments to characterize the demagnetization processes of highly spin-polarized magnetic thin films on a femtosecond time scale. Previous studies have suggested shifting the Fermi energy into the center of the gap by tuning the number of electrons and thereby to study its influence on spin-flip processes. Here we show that choosing isoelectronic Heusler compounds (Co2MnSi, Co2MnGe and Co2FeAl) allows us to vary the degree of spin polarization between 60% and 86%. We explain this behavior by considering the robustness of the gap against structural disorder. Moreover, we observe that Co-Fe-based pseudo gap materials, such as partially ordered Co-Fe-Ge alloys and also the well-known Co-Fe-B alloys, can reach similar values of the spin polarization. By using the unique features of these metals we vary the number of possible spin-flip channels, which allows us to pinpoint and control the half metals electronic structure and its influence onto the elementary mechanisms of ultrafast demagnetization.
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Submitted 17 February, 2012;
originally announced February 2012.
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Measurement of Gilbert damping parameters in nanoscale CPP-GMR spin-valves
Authors:
Neil Smith,
Matthew J. Carey,
Jeffrey R. Childress
Abstract:
In-situ, device level measurement of thermal mag-noise spectral linewidths in 60nm diameter CPP-GMR spin-valve stacks of IrMn/ref/Cu/free, with reference and free layer of similar CoFe/CoFeGe alloy, are used to simultaneously determine the intrinsic Gilbert damping for both magnetic layers. It is shown that careful alignment at a "magic-angle" between free and reference layer static equilibrium…
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In-situ, device level measurement of thermal mag-noise spectral linewidths in 60nm diameter CPP-GMR spin-valve stacks of IrMn/ref/Cu/free, with reference and free layer of similar CoFe/CoFeGe alloy, are used to simultaneously determine the intrinsic Gilbert damping for both magnetic layers. It is shown that careful alignment at a "magic-angle" between free and reference layer static equilibrium magnetization can allow direct measurement of the broadband intrinsic thermal spectra in the virtual absence of spin-torque effects which otherwise grossly distort the spectral line shapes and require linewidth extrapolations to zero current (which are nonetheless also shown to agree well with the direct method). The experimental magic-angle spectra are shown to be in good qualitative and quantitative agreement with both macrospin calculations and micromagnetic eigenmode analysis. Despite similar composition and thickness, it is repeatedly found that the IrMn exchange pinned reference layer has ten times larger intrinsic Gilbert damping (alpha ~ 0.1) than that of the free-layer (alpha ~ 0.01). It is argued that the large reference layer damping results from strong, off -resonant coupling to to lossy modes of an IrMn/ref couple, rather than commonly invoked two-magnon processes.
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Submitted 17 February, 2010;
originally announced February 2010.
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Rapid Domain Wall Motion in Permalloy Nanowires Excited by Spin-Polarized Current Applied Perpendicular to the Nanowire
Authors:
C. T. Boone,
J. A. Katine,
M. Carey,
J. R. Childress,
X. Cheng,
I. N. Krivorotov
Abstract:
We study domain wall (DW) dynamics in permalloy nanowires excited by alternating spin-polarized current applied perpendicular to the nanowire. Spin torque ferromagnetic resonance measurements reveal that DW oscillations at a pinning site in the nanowire can be excited with velocities as high as 800 m/s at current densities below 10$^7$ A/cm$^2$.
We study domain wall (DW) dynamics in permalloy nanowires excited by alternating spin-polarized current applied perpendicular to the nanowire. Spin torque ferromagnetic resonance measurements reveal that DW oscillations at a pinning site in the nanowire can be excited with velocities as high as 800 m/s at current densities below 10$^7$ A/cm$^2$.
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Submitted 3 March, 2010; v1 submitted 9 September, 2009;
originally announced September 2009.
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Suppression of spin-torque in current perpendicular to the plane spin-valves by addition of Dy cap layers
Authors:
S. Maat,
N. Smith,
M. J. Carey,
J. R. Childress
Abstract:
We demonstrate that the addition of Dy capping layers in current perpendicular to the plane giant magneto-resistive spin-valves can increase the critical current density beyond which spin-torque induced instabilities are observed by about a factor of three. Current densities as high as 5e7 A/cm2 are measured provided that the electron current flows from the free to the reference layer. While Dy…
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We demonstrate that the addition of Dy capping layers in current perpendicular to the plane giant magneto-resistive spin-valves can increase the critical current density beyond which spin-torque induced instabilities are observed by about a factor of three. Current densities as high as 5e7 A/cm2 are measured provided that the electron current flows from the free to the reference layer. While Dy capped samples exhibit nonmagnetic 1/f noise, it is sufficiently small to be unimportant for read head operation at practical data rates.
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Submitted 14 August, 2008;
originally announced August 2008.
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Co-resonant enhancement of spin-torque critical currents in spin-valves with synthetic-ferrimagnet free-layer
Authors:
Neil Smith,
Stefan Maat,
Matthew J. Carey,
Jeffrey R. Childress
Abstract:
It is experimentally shown that the critical current for onset of spin-torque instability in current-perpendicular-to-plane spin-valves can be strongly enhanced using "synthetic ferrimagnet" free-layers of form FM1/Ru/FM2 (FM=ferrromagnet). However, this enhancement occurs for only one polarity of bias current. A two-macrospin model is shown to reproduce the observations. The model suggests that…
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It is experimentally shown that the critical current for onset of spin-torque instability in current-perpendicular-to-plane spin-valves can be strongly enhanced using "synthetic ferrimagnet" free-layers of form FM1/Ru/FM2 (FM=ferrromagnet). However, this enhancement occurs for only one polarity of bias current. A two-macrospin model is shown to reproduce the observations. The model suggests that this phenomenon is related to a polarity-dependent, spin-torque induced co-resonance between the two natural dynamic modes of the FM1/FM2 couple. The resonance condition facilitates energy transfer out of the spin-torque destabilized mode into the other stable mode whose effective damping is actually enhanced by spin-torques, thereby delaying the onset of instability of this coupled system to larger critical currents.
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Submitted 2 September, 2008; v1 submitted 14 August, 2008;
originally announced August 2008.
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High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents
Authors:
M. J. Carey,
Neil Smith,
S. Maat,
J. R. Childress
Abstract:
It is shown that the maximum stable output of a CPP-GMR sensor is increased significantly by using a synthetic ferrimagnet free layer, provided the electron current flows from free layer to reference layer. This free layer allows a larger magnetoresistance ratio for a given free layer magnetic moment, and in addition results in a greater than three-fold increase in the critical current above whi…
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It is shown that the maximum stable output of a CPP-GMR sensor is increased significantly by using a synthetic ferrimagnet free layer, provided the electron current flows from free layer to reference layer. This free layer allows a larger magnetoresistance ratio for a given free layer magnetic moment, and in addition results in a greater than three-fold increase in the critical current above which spin-torque instability of the free layer occurs. In read heads with net free layer moments equivalent to only 4.5nm of Ni80Fe20, this effect is shown to result in sustainable sense current densities above 2e8 A/cm2.
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Submitted 14 August, 2008;
originally announced August 2008.
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Effects of rf Current on Spin Transfer Torque Induced Dynamics
Authors:
S. H. Florez,
J. A. Katine,
M. Carey,
L. Folks,
O. Ozatay,
B. D. Terris
Abstract:
The impact of radiofrequency (rf) currents on the direct current (dc) driven switching dynamics in current-perpendicular-to-plane nanoscale spin valves is demonstrated. The rf currents dramatically alter the dc driven free layer magnetization reversal dynamics as well as the dc switching level. This occurs when the frequency of the rf current is tuned to a frequency range around the dc driven ma…
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The impact of radiofrequency (rf) currents on the direct current (dc) driven switching dynamics in current-perpendicular-to-plane nanoscale spin valves is demonstrated. The rf currents dramatically alter the dc driven free layer magnetization reversal dynamics as well as the dc switching level. This occurs when the frequency of the rf current is tuned to a frequency range around the dc driven magnetization precession frequencies. For these frequencies, interactions between the dc driven precession and the injected rf induce frequency locking and frequency pulling effects that lead to a measurable dependence of the critical switching current on the frequency of the injected rf. Based on macrospin simulations, including dc as well as rf spin torque currents, we explain the origin of the observed effects.
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Submitted 14 April, 2008; v1 submitted 26 March, 2008;
originally announced March 2008.
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Magnetic domain wall propagation in a submicron spin-valve stripe: influence of the pinned layer
Authors:
J. Briones,
F. Montaigne,
Daniel Lacour,
M. Hehn,
M. J. Carey,
J. R. Childress
Abstract:
The propagation of a domain wall in a submicron ferromagnetic spin-valve stripe is investigated using giant magnetoresistance. A notch in the stripe efficiently traps an injected wall stopping the domain propagation. The authors show that the magnetic field at which the wall is depinned displays a stochastic nature. Moreover, the depinning statistics are significantly different for head to head…
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The propagation of a domain wall in a submicron ferromagnetic spin-valve stripe is investigated using giant magnetoresistance. A notch in the stripe efficiently traps an injected wall stopping the domain propagation. The authors show that the magnetic field at which the wall is depinned displays a stochastic nature. Moreover, the depinning statistics are significantly different for head to head and tail-to-tail domain walls. This is attributed to the dipolar field generated in the vicinity of the notch by the pinned layer of the spin-valve.
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Submitted 7 January, 2008;
originally announced January 2008.
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Distribution of the magnetization reversal duration in sub-ns spin-transfer switching
Authors:
T. Devolder,
C. Chappert,
J. A. Katine,
M. J. Carey,
K. Ito
Abstract:
We study the distribution of switching times in spin-transfer switching induced by sub-ns current pulses in pillar-shaped spin-valves. The pulse durations leading to switching follow a comb-like distribution, multiply-peaked at a few most probable, regularly spaced switching durations. These durations reflect the precessional nature of the switching, which occurs through a fluctuating integer nu…
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We study the distribution of switching times in spin-transfer switching induced by sub-ns current pulses in pillar-shaped spin-valves. The pulse durations leading to switching follow a comb-like distribution, multiply-peaked at a few most probable, regularly spaced switching durations. These durations reflect the precessional nature of the switching, which occurs through a fluctuating integer number of precession cycles. This can be modeled considering the thermal variance of the initial magnetization orientations and the occurrence of vanishing total torque in the possible magnetization trajectories. Biasing the spin-valve with a hard axis field prevents some of these occurrences, and can provide an almost perfect reproducibility of the switching duration.
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Submitted 27 September, 2006;
originally announced September 2006.
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Current-driven microwave oscillations in current perpendicular-to-plane spin-valve nanopillars
Authors:
Q. Mistral,
Joo-Von Kim,
T. Devolder,
P. Crozat,
C. Chappert,
J. A. Katine,
M. J. Carey,
K. Ito
Abstract:
We study the current and temperature dependences of the microwave voltage emission of spin-valve nanopillars subjected to an in-plane magnetic field and a perpendicular-to-plane current. Despite the complex multilayer geometry, clear microwave emission is shown to be possible and spectral lines as narrow as 3.8 MHz (at 150 K) are observed.
We study the current and temperature dependences of the microwave voltage emission of spin-valve nanopillars subjected to an in-plane magnetic field and a perpendicular-to-plane current. Despite the complex multilayer geometry, clear microwave emission is shown to be possible and spectral lines as narrow as 3.8 MHz (at 150 K) are observed.
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Submitted 10 March, 2006;
originally announced March 2006.
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Angular Dependence of Spin-Torque Critical Currents in CPP-GMR Read Heads
Authors:
Neil Smith,
J. . A. Katine,
Jeffrey R. Childress,
Matthew J. Carey
Abstract:
This paper derives expressions for the critical current at the onset of spin-transfer-torque (STT) instability in CPP-GMR read heads, as a function of the relative angle (theta) between the free and reference layer magnetizations. Including a general angular dependent STT coefficient B(q=cos(theta)) exclusive of the angular momentum conserving sin(theta) factor, the critical current is found to…
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This paper derives expressions for the critical current at the onset of spin-transfer-torque (STT) instability in CPP-GMR read heads, as a function of the relative angle (theta) between the free and reference layer magnetizations. Including a general angular dependent STT coefficient B(q=cos(theta)) exclusive of the angular momentum conserving sin(theta) factor, the critical current is found to depend on both B(q) and dB/dq in the non-collinear case |q| < 1. The paper also details the experimental measurement of the angular dependent critical currents on 50-nm sized CPP-GMR devices with synthetic antiferromagnet pinned layers, and fabricated using e-beam lithography. The measurements are consistent with prior theoretical models of the form B(q) ~ 1/[1+cnst*q], and indicate perhaps unanticipated implications for read head operation due to the critical current dependence on dB/dq.
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Submitted 5 May, 2005;
originally announced May 2005.
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Spin transfer switching of spin valve nanopillars using nanosecond pulsed currents
Authors:
Shehzaad Kaka,
Matthew Pufall,
William Rippard,
Thomas Silva,
Stephen Russek,
Jordan Katine,
Matthew Carey
Abstract:
Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 mA to 7.8 mA, and varied in duration within the range of 100 ps to 200 ns. The probability of device reversal is measured as a function of the pulse duration for each pulse amplitude. The r…
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Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 mA to 7.8 mA, and varied in duration within the range of 100 ps to 200 ns. The probability of device reversal is measured as a function of the pulse duration for each pulse amplitude. The reciprocal pulse duration required for 95% reversal probability is linearly related to the pulse current amplitude for currents exceeding 1.9 mA. For this device, 1.9 mA marks the crossover between dynamic reversal at larger currents and reversal by thermal activation for smaller currents.
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Submitted 13 November, 2004;
originally announced November 2004.
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Thermal Effects on the Magnetic Field Dependence of Spin Transfer Induced Magnetization Reversal
Authors:
D. Lacour,
J. A. Katine,
N. Smith,
M. J. Carey,
J. R. Childress
Abstract:
We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes dipole coupling to the free layer and field induced rotation of the reference layer. We find that the critical currents for spin transfer induced magnetization…
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We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes dipole coupling to the free layer and field induced rotation of the reference layer. We find that the critical currents for spin transfer induced magnetization reversal of the free layer vary dramatically with relatively small changes the in-plane magnetic field, in contrast to theoretical predictions based on stability analysis of the Gilbert equations of magnetization dynamics including Slonczewski-type spin-torque terms. The discrepancy is believed due to thermal fluctuations over the time scale of the measurements. Once thermal fluctuations are taken into account, we find good quantitative agreement between our experimental results and numerical simulations.
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Submitted 23 June, 2004;
originally announced June 2004.
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Large-angle, gigahertz-rate random telegraph switching induced by spin-momentum transfer
Authors:
Matthew R. Pufall,
William H. Rippard,
Shehzaad Kaka,
Steven E. Russek,
Thomas J. Silva,
Jordan Katine,
Matt Carey
Abstract:
We show that spin-polarized dc current passing through a small magnetic element induces two-state, random telegraph switching of the magnetization via the spin-momentum transfer effect. The resistances of the states differ by up to 50% of the change due to complete magnetization reversal. Fluctuations are seen for a wide range of currents and magnetic fields, with rates that can exceed 2 GHz, an…
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We show that spin-polarized dc current passing through a small magnetic element induces two-state, random telegraph switching of the magnetization via the spin-momentum transfer effect. The resistances of the states differ by up to 50% of the change due to complete magnetization reversal. Fluctuations are seen for a wide range of currents and magnetic fields, with rates that can exceed 2 GHz, and involve collective motion of a large volume (10^4 nm^3) of spins. Switching rate trends with field and current indicate that increasing temperature alone cannot explain the dynamics. The rates approach a stochastic regime wherein dynamics are governed by both precessional motion and thermal perturbations.
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Submitted 5 April, 2004;
originally announced April 2004.
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Experimental measurements of multiple stable trapped domain wall states induced in nanofabricated elements
Authors:
D. Lacour,
J. A. Katine,
L. Folks,
T. Block,
J. R. Childress,
M. J. Carey,
B. A. Gurney
Abstract:
The presence of a domain wall trapped by a sub-micron notch is probed in two ways: through electronic transport measurements and by Magnetic Force Microscopy (MFM). We observe complex magnetic features which are consistent with numerical simulations predicting the existence of multiple magnetic configurations stabilized by the notch structure.
The presence of a domain wall trapped by a sub-micron notch is probed in two ways: through electronic transport measurements and by Magnetic Force Microscopy (MFM). We observe complex magnetic features which are consistent with numerical simulations predicting the existence of multiple magnetic configurations stabilized by the notch structure.
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Submitted 18 June, 2003;
originally announced June 2003.
