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Vibrational and Thermal Properties of ZnX (X=Se, Te): Density Functional Theory (LDA and GGA) versus Experiment
Authors:
R. K. Kremer,
M. Cardona,
R. Lauck,
G. Siegle,
A. H. Romero
Abstract:
We calculated the phonon dispersion relations of ZnX (X=Se, Te) employing ab initio techniques. These relations have been used to evaluate the temperature dependence of the respective specific heats of crystals with varied isotopic compositions. These results have been compared with mea- surements performed on crystals down to 2 K. The calculated and measured data are generally in excellent agreem…
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We calculated the phonon dispersion relations of ZnX (X=Se, Te) employing ab initio techniques. These relations have been used to evaluate the temperature dependence of the respective specific heats of crystals with varied isotopic compositions. These results have been compared with mea- surements performed on crystals down to 2 K. The calculated and measured data are generally in excellent agreement with each other. Trends in the phonon dispersion relations and the correspond- ing densities of states for the zinc chalcogenide series of zincblende-type materials are discussed.
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Submitted 9 December, 2011;
originally announced December 2011.
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Triplet Exciton Generation in Bulk-Heterojunction Solar Cells based on Endohedral Fullerenes
Authors:
Moritz Liedtke,
Andreas Sperlich,
Hannes Kraus,
Andreas Baumann,
Carsten Deibel,
Maarten J. M. Wirix,
Joachim Loos,
Claudia M. Cardona,
Vladimir Dyakonov
Abstract:
Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallic nitride endohedral fullerene 1-[3-(2-ethyl)hexoxy carbonyl]propyl-1-phenyl-Lu3N@C80 (Lu3N@C80-PCBEH) show an open circuit voltage (VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acid methyl ester (PC61BM). To fully exploit the potential of this acceptor molecule with respect to the power conversio…
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Organic bulk-heterojunctions (BHJ) and solar cells containing the trimetallic nitride endohedral fullerene 1-[3-(2-ethyl)hexoxy carbonyl]propyl-1-phenyl-Lu3N@C80 (Lu3N@C80-PCBEH) show an open circuit voltage (VOC) 0.3 V higher than similar devices with [6,6]-phenyl-C[61]-butyric acid methyl ester (PC61BM). To fully exploit the potential of this acceptor molecule with respect to the power conversion efficiency (PCE) of solar cells, the short circuit current (JSC) should be improved to become competitive with the state of the art solar cells. Here, we address factors influencing the JSC in blends containing the high voltage absorber Lu3N@C80-PCBEH in view of both photogeneration but also transport and extraction of charge carriers. We apply optical, charge carrier extraction, morphology, and spin-sensitive techniques. In blends containing Lu3N@C80-PCBEH, we found 2 times weaker photoluminescence quenching, remainders of interchain excitons, and, most remarkably, triplet excitons formed on the polymer chain, which were absent in the reference P3HT:PC61BM blends. We show that electron back transfer to the triplet state along with the lower exciton dissociation yield due to intramolecular charge transfer in Lu3N@C80-PCBEH are responsible for the reduced photocurrent.
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Submitted 18 July, 2011;
originally announced July 2011.
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Electronic and phononic properties of the chalcopyrite CuGaS2
Authors:
A. H. Romero,
M. Cardona,
R. K. Kremer,
R. Lauck,
G. Siegle,
C. Hoch,
A. Munoz,
A. Schindler
Abstract:
The availability of ab initio electronic calculations and the concomitant techniques for deriving the corresponding lattice dynamics have been profusely used for calculating thermodynamic and vibrational properties of semiconductors, as well as their dependence on isotopic masses. The latter have been compared with experimental data for elemental and binary semiconductors with different isotopic c…
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The availability of ab initio electronic calculations and the concomitant techniques for deriving the corresponding lattice dynamics have been profusely used for calculating thermodynamic and vibrational properties of semiconductors, as well as their dependence on isotopic masses. The latter have been compared with experimental data for elemental and binary semiconductors with different isotopic compositions. Here we present theoretical and experimental data for several vibronic and thermodynamic properties of CuGa2, a canonical ternary semiconductor of the chalcopyrite family. Among these properties are the lattice parameters, the phonon dispersion relations and densities of states (projected on the Cu, Ga, and S constituents), the specific heat and the volume thermal expansion coefficient. The calculations were performed with the ABINIT and VASP codes within the LDA approximation for exchange and correlation and the results are compared with data obtained on samples with the natural isotope composition for Cu, Ga and S, as well as for isotope enriched samples.
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Submitted 3 February, 2011;
originally announced February 2011.
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Electronic and phononic properties of cinnabar: ab initio calculations and some experimental results
Authors:
M. Cardona,
R. K. Kremer,
R. Lauck,
G. Siegle,
A. Munoz,
A. H. Romero,
M. Schmidt
Abstract:
We report ab initio calculations of the electronic band structure, the corresponding optical spectra, and the phonon dispersion relations of trigonal alpha-HgS (cinnabar). The calculated dielectric functions are compared with unpublished optical measurements by Zallen and coworkers. The phonon dispersion relations are used to calculate the temperature and isotopic mass dependence of the specific h…
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We report ab initio calculations of the electronic band structure, the corresponding optical spectra, and the phonon dispersion relations of trigonal alpha-HgS (cinnabar). The calculated dielectric functions are compared with unpublished optical measurements by Zallen and coworkers. The phonon dispersion relations are used to calculate the temperature and isotopic mass dependence of the specific heat which has been compared with experimental data obtained on samples with the natural isotope abundances of the elements Hg and S (natural minerals and vapor phase grown samples) and on samples prepared from isotope enriched elements by vapor phase transport. Comparison of the calculated vibrational frequencies with Raman and ir data is also presented. Contrary to the case of cubic beta-HgS (metacinnabar), the spin-orbit splitting of the top valence bands at the Gamma-point of the Brillouin zone (Delta_0) is positive, because of a smaller admixture of 5d core electrons of Hg. Calculations of the lattice parameters, and the pressure dependence of Delta_0 and the corresponding direct gap E_0~2eV are also presented. The lowest absorption edge is confirmed to be indirect.
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Submitted 13 July, 2010;
originally announced July 2010.
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Electronic, vibrational, and thermodynamic properties of ZnS (zincblende and rocksalt structure)
Authors:
M. Cardona,
R. K. Kremer,
R. Lauck,
G. Siegle,
A. Munoz,
A. H. Romero,
A. Schindler
Abstract:
We have measured the specific heat of zincblende ZnS for several isotopic compositions and over a broad temperature range (3 to 1100 K). We have compared these results with calculations based on ab initio electronic band structures, performed using both LDA and GGA exchange- correlation functionals. We have compared the lattice dynamics obtained in this manner with experimental data and have cal…
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We have measured the specific heat of zincblende ZnS for several isotopic compositions and over a broad temperature range (3 to 1100 K). We have compared these results with calculations based on ab initio electronic band structures, performed using both LDA and GGA exchange- correlation functionals. We have compared the lattice dynamics obtained in this manner with experimental data and have calculated the one-phonon and two-phonon densities of states. We have also calculated mode Grueneisen parameters at a number of high symmetry points of the Brillouin zone. The electronic part of our calculations has been used to investigate the effect of the 3d core electrons of zinc on the spin-orbit splitting of the top valence bands. The effect of these core electrons on the band structure of the rock salt modification of ZnS is also discussed.
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Submitted 26 November, 2009;
originally announced November 2009.
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Electronic, vibrational and thermodynamic properties of beta-HgS (metacinnabar), HgSe and HgTe
Authors:
M. Cardona,
R. K. Kremer,
R. Lauck,
G. Siegle,
A. Munoz,
A. H. Romero
Abstract:
We report ab initio calculations of the electronic band structure and the phonon dispersion relations of the zincblende-type mercury chalcogenides (beta-HgS, HgSe, and HgTe). The latter have been used to evaluate the temperature dependence of the specific heat which has been compared with experimental data. The electronic band structure of these materials has been confirmed to have an inverted d…
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We report ab initio calculations of the electronic band structure and the phonon dispersion relations of the zincblende-type mercury chalcogenides (beta-HgS, HgSe, and HgTe). The latter have been used to evaluate the temperature dependence of the specific heat which has been compared with experimental data. The electronic band structure of these materials has been confirmed to have an inverted direct gap of the alpha-tin type, which makes HgSe and HgTe semimetallic. For beta-HgS, however, our calculations predict a negative spin-orbit splitting which restores semiconducting properties to the material in spite of the inverted gap. We have calculated the spin-orbit induced linear terms in k which appear at the Gamma_8 valence bands. We have also investigated the pressure dependence of the crystal structure and the phonons.
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Submitted 26 August, 2009; v1 submitted 18 August, 2009;
originally announced August 2009.
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Electronic and phononic Raman scattering in detwinned YBa$_2$Cu$_3$O$_{6.95}$ and Y$_{0.85}$Ca$_{0.15}$Ba$_2$Cu$_3$O$_{6.95}$: s-wave admixture to the $d_{x^2-y^2}$-wave order parameter
Authors:
M. Bakr,
A. P. Schnyder,
L. Klam,
D. Manske,
C. T. Lin,
B. Keimer,
M. Cardona,
C. Ulrich
Abstract:
Inelastic light (Raman) scattering has been used to study electronic excitations and phonon anomalies in detwinned, slightly overdoped YBa$_2$Cu$_3$O$_{6.95}$ and moderately overdoped Y$_{0.85}$Ca$_{0.15}$Ba$_2$Cu$_3$O$_{6.95}$ single crystals. In both samples modifications of the electronic pair-breaking peaks when interchanging the a- and b-axis were observed. The lineshapes of several phonon…
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Inelastic light (Raman) scattering has been used to study electronic excitations and phonon anomalies in detwinned, slightly overdoped YBa$_2$Cu$_3$O$_{6.95}$ and moderately overdoped Y$_{0.85}$Ca$_{0.15}$Ba$_2$Cu$_3$O$_{6.95}$ single crystals. In both samples modifications of the electronic pair-breaking peaks when interchanging the a- and b-axis were observed. The lineshapes of several phonon modes involving plane and apical oxygen vibrations exhibit pronounced anisotropies with respect to the incident and scattered light field configurations. Based on a theoretical model that takes both electronic and phononic contributions to the Raman spectra into account, we attribute the anisotropy of the superconductivity-induced changes in the phonon lineshapes to a small s-wave admixture to the $d_{x^2-y^2}$ pair wave-function. Our theory allows us to disentangle the electronic Raman signal from the phononic part and to identify corresponding interference terms. We argue that the Raman spectra are consistent with an s-wave admixture with an upper limit of 20 percent.
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Submitted 27 July, 2009;
originally announced July 2009.
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Isotope effects on the lattice parameter of cubic SiC
Authors:
Carlos P. Herrero,
Rafael Ramirez,
Manuel Cardona
Abstract:
Path-integral molecular dynamics simulations in the isothermal-isobaric (NPT) ensemble have been carried out to study the dependence of the lattice parameter of 3C-SiC upon isotope mass. This computational method allows a quantitative and nonperturbative study of such anharmonic effect. Atomic nuclei were treated as quantum particles interacting via a tight-binding-type potential. At 300 K, the…
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Path-integral molecular dynamics simulations in the isothermal-isobaric (NPT) ensemble have been carried out to study the dependence of the lattice parameter of 3C-SiC upon isotope mass. This computational method allows a quantitative and nonperturbative study of such anharmonic effect. Atomic nuclei were treated as quantum particles interacting via a tight-binding-type potential. At 300 K, the difference Delta a between lattice parameters of 3C-SiC crystals with 12C and 13C amounts to 2.1 x 10^{-4} A. The effect due to Si isotopes is smaller, and amounts to 3.5 x 10^{-5} A when replacing 28Si by 29Si. Results of the PIMD simulations are interpreted in terms of a quasiharmonic approximation for the lattice vibrations.
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Submitted 13 July, 2009;
originally announced July 2009.
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Lattice Dynamics and Specific Heat of $α$ - GeTe: a theoretical and experimental study
Authors:
R. Shaltaf,
X. Gonze,
M. Cardona,
R. K. Kremer,
G. Siegle
Abstract:
We extend recent \textit{ab initio} calculations of the electronic band structure and the phonon dispersion relations of rhombohedral GeTe to calculations of the density of phonon states and the temperature dependent specific heat. The results are compared with measurements of the specific heat. It is discovered that the specific heat depends on hole concentration, not only in the very low tempe…
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We extend recent \textit{ab initio} calculations of the electronic band structure and the phonon dispersion relations of rhombohedral GeTe to calculations of the density of phonon states and the temperature dependent specific heat. The results are compared with measurements of the specific heat. It is discovered that the specific heat depends on hole concentration, not only in the very low temperature region (Sommerfeld term) but also at the maximum of $C_p/T^3$ (around 16 K). To explain this phenomenon, we have performed \textit{ab initio} lattice dynamical calculations for GeTe rendered metallic through the presence of a heavy hole concentration ($p$ $\sim$ 2$\times$ 10$^{21}$ cm$^{-3}$). They account for the increase observed in the maximum of $C_p/T^3$.
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Submitted 28 October, 2008; v1 submitted 25 October, 2008;
originally announced October 2008.
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Lattice Properties of PbX (X = S, Se, Te): Experimental Studies and ab initio Calculations Including Spin-Orbit Effects
Authors:
A. H. Romero,
M. Cardona,
R. K. Kremer,
R. Lauck,
G. Siegle,
J. Serrano,
X. C. Gonze
Abstract:
During the past five years the low temperature heat capacity of simple semiconductors and insulators has received renewed attention. Of particular interest has been its dependence on isotopic masses and the effect of spin- orbit coupling in ab initio calculations. Here we concentrate on the lead chalcogenides PbS, PbSe and PbTe. These materials, with rock salt structure, have different natural i…
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During the past five years the low temperature heat capacity of simple semiconductors and insulators has received renewed attention. Of particular interest has been its dependence on isotopic masses and the effect of spin- orbit coupling in ab initio calculations. Here we concentrate on the lead chalcogenides PbS, PbSe and PbTe. These materials, with rock salt structure, have different natural isotopes for both cations and anions, a fact that allows a systematic experimental and theoretical study of isotopic effects e.g. on the specific heat. Also, the large spin-orbit splitting of the 6p electrons of Pb and the 5p of Te allows, using a computer code which includes spin-orbit interaction, an investigation of the effect of this interaction on the phonon dispersion relations and the temperature dependence of the specific heat and on the lattice parameter. It is shown that agreement between measurements and calculations significantly improves when spin-orbit interaction is included.
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Submitted 22 August, 2008;
originally announced August 2008.
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Strain-Induced Conduction Band Spin Splitting in GaAs from First Principles Calculations
Authors:
Athanasios N. Chantis,
Manuel Cardona,
Niels E. Christensen,
Darryl L. Smith,
Mark van Schilfgaarde,
Takao Kotani,
Axel Svane,
Robert C. Albers
Abstract:
We use a recently developed self-consistent GW approximation to present first principles calculations of the conduction band spin splitting in GaAs under [110] strain. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splitting under deformation based on a quasiparticle approach; and…
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We use a recently developed self-consistent GW approximation to present first principles calculations of the conduction band spin splitting in GaAs under [110] strain. The spin orbit interaction is taken into account as a perturbation to the scalar relativistic hamiltonian. These are the first calculations of conduction band spin splitting under deformation based on a quasiparticle approach; and because the self-consistent GW scheme accurately reproduces the relevant band parameters, it is expected to be a reliable predictor of spin splittings. We also discuss the spin relaxation time under [110] strain and show that it exhibits an in-plane anisotropy, which can be exploited to obtain the magnitude and sign of the conduction band spin splitting experimentally.
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Submitted 26 June, 2008; v1 submitted 13 June, 2008;
originally announced June 2008.
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Path-integral molecular dynamics simulation of 3C-SiC
Authors:
Rafael Ramirez,
Carlos P. Herrero,
Eduardo R. Hernandez,
Manuel Cardona
Abstract:
Molecular dynamics simulations of 3C-SiC have been performed as a function of pressure and temperature. These simulations treat both electrons and atomic nuclei by quantum mechanical methods. While the electronic structure of the solid is described by an efficient tight-binding Hamiltonian, the nuclei dynamics is treated by the path integral formulation of statistical mechanics. To assess the re…
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Molecular dynamics simulations of 3C-SiC have been performed as a function of pressure and temperature. These simulations treat both electrons and atomic nuclei by quantum mechanical methods. While the electronic structure of the solid is described by an efficient tight-binding Hamiltonian, the nuclei dynamics is treated by the path integral formulation of statistical mechanics. To assess the relevance of nuclear quantum effects, the results of quantum simulations are compared to others where either the Si nuclei, the C nuclei or both atomic nuclei are treated as classical particles. We find that the experimental thermal expansion of 3C-SiC is realistically reproduced by our simulations. The calculated bulk modulus of 3C-SiC and its pressure derivative at room temperature show also good agreement with the available experimental data. The effect of the electron-phonon interaction on the direct electronic gap of 3C-SiC has been calculated as a function of temperature and related to results obtained for bulk diamond and Si. Comparison to available experimental data shows satisfactory agreement, although we observe that the employed tight-binding model tends to overestimate the magnitude of the electron-phonon interaction. The effect of treating the atomic nuclei as classical particles on the direct gap of 3C-SiC has been assessed. We find that non-linear quantum effects related to the atomic masses are particularly relevant at temperatures below 250 K.
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Submitted 22 April, 2008;
originally announced April 2008.
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Temperature-dependent Raman scattering of natural and isotopically substituted PbS
Authors:
P. G. Etchegoin,
M. Cardona,
R. Lauck,
R. J. H. Clark,
J. Serrano,
A. H. Romero
Abstract:
Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this material because of the forbidden nature of its first order scattering and its opacity to visible lasers. Nevertheless, useful vibrational spectra from two-phonon…
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Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this material because of the forbidden nature of its first order scattering and its opacity to visible lasers. Nevertheless, useful vibrational spectra from two-phonon processes are obtained with red lasers, probably because of a resonance in the concomitant electronic transitions. Here we report temperature dependent spectra, covering the 10-300 K range, for two samples with different sulfur isotopic compositions. The results are analyzed by comparison with ab initio calculations of the lattice dynamics of PbS and the corresponding densities of one and two-phonon states. Emphasis is placed on the analysis of the two phonon band centered at ~430 cm-1.
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Submitted 2 September, 2007;
originally announced September 2007.
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Effect of the spin-orbit interaction on the thermodynamic properties of crystals: The specific heat of bismuth
Authors:
Diaz-Luis,
A. H. Romero,
M. Cardona,
R. K. Kremer,
X. Gonze
Abstract:
In recent years, there has been increasing interest in the specific heat $C$ of insulators and semiconductors because of the availability of samples with different isotopic masses and the possibility of performing \textit{ab initio} calculations of its temperature dependence $C(T)$ using as a starting point the electronic band structure. Most of the crystals investigated are elemental (e.g., ger…
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In recent years, there has been increasing interest in the specific heat $C$ of insulators and semiconductors because of the availability of samples with different isotopic masses and the possibility of performing \textit{ab initio} calculations of its temperature dependence $C(T)$ using as a starting point the electronic band structure. Most of the crystals investigated are elemental (e.g., germanium) or binary (e.g., gallium nitride) semiconductors. The initial electronic calculations were performed in the local density approximation and did not include spin-orbit interaction. Agreement between experimental and calculated results was usually found to be good, except for crystals containing heavy atoms (e.g., PbS) for which discrepancies of the order of 20% existed at the low temperature maximum found for $C/T^3$. It has been conjectured that this discrepancies result from the neglect of spin-orbit interaction which is large for heavy atoms ($Δ_0\sim$1.3eV for the $p$ valence electrons of atomic lead). Here we discuss measurements and \textit{ab initio} calculations of $C(T)$ for crystalline bismuth ($Δ_0\sim$1.7 eV), strictly speaking a semimetal but in the temperature region accessible to us ($T >$ 2K) acting as a semiconductor. We extend experimental data available in the literature and notice that the \textit{ab initio} calculations without spin-orbit interaction exhibit a maximum at $\sim$8K, about 20% lower than the measured one. Inclusion of spin-orbit interaction decreases the discrepancy markedly: The maximum of $C(T)$ is now only 7% larger than the measured one. Exact agreement is obtained if the spin-orbit hamiltonian is reduced by a factor of $\sim$0.8.
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Submitted 17 May, 2007;
originally announced May 2007.
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Heat Capacity of PbS: Isotope Effects
Authors:
M. Cardona,
R. K. Kremer,
R. Lauck,
G. Siegle,
J. Serrano,
A. H. Romero
Abstract:
In recent years, the availability of highly pure stable isotopes has made possible the investigation of the dependence of the physical properties of crystals, in particular semiconductors, on their isotopic composition. Following the investigation of the specific heat ($C_p$, $C_v$) of monatomic crystals such as diamond, silicon, and germanium, similar investigations have been undertaken for the…
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In recent years, the availability of highly pure stable isotopes has made possible the investigation of the dependence of the physical properties of crystals, in particular semiconductors, on their isotopic composition. Following the investigation of the specific heat ($C_p$, $C_v$) of monatomic crystals such as diamond, silicon, and germanium, similar investigations have been undertaken for the tetrahedral diatomic systems ZnO and GaN (wurtzite structure), for which the effect of the mass of the cation differs from that of the anion. In this article we present measurements for a semiconductor with rock salt structure, namely lead sulfide. Because of the large difference in the atomic mass of both constituents ($M_{\rm Pb}$= 207.21 and ($M_{\rm S}$=32.06 a.m.u., for the natural isotopic abundance) the effects of varying the cation and that of the anion mass are very different for this canonical semiconductor. We compare the measured temperature dependence of $C_p \approx C_v$, and the corresponding derivatives with respect to ($M_{\rm Pb}$ and $M_{\rm S}$), with \textit{\textit{ab initio}} calculations based on the lattice dynamics obtained from the local density approximation (LDA) electronic band structure. Quantitative deviations between theory and experiment are attributed to the absence of spin-orbit interaction in the ABINIT program used for the electronic band structure calculations.
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Submitted 12 May, 2007;
originally announced May 2007.
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Albert Einstein as the father of solid state physics
Authors:
Manuel Cardona
Abstract:
Einstein is usually revered as the father of special and general relativity. In this article I demonstrate that he is also the father of Solid State Physics, or even his broader version known as Condensed Matter Physics (including liquids). His 1907 article on the specific heat of solids introduces, for the first time, the effect of lattice vibrations on the thermodynamic properties of crystals,…
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Einstein is usually revered as the father of special and general relativity. In this article I demonstrate that he is also the father of Solid State Physics, or even his broader version known as Condensed Matter Physics (including liquids). His 1907 article on the specific heat of solids introduces, for the first time, the effect of lattice vibrations on the thermodynamic properties of crystals, in particular the specific heat. His 1905 article on the photoelectric effect and photoluminescence opened the fields of photoelectron spectroscopy and photoluminescence spectroscopy. Other important achievements include Bose-Einstein condensation and the Einstein relation between the difussion coefficient an mobility. In this article I discuss Einstein's papers relevant to these topics and their relevance to modern day condensed matter physics.
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Submitted 31 August, 2005;
originally announced August 2005.
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Heat capacity of $α$-GaN: Isotope Effects
Authors:
R. K. Kremer,
M. Cardona,
E. Schmitt,
J. Blumm,
S. K. Estreicher,
M. Sanati,
M. Bockowski,
I. Grzegory,
T. Suski,
A. Jezowski
Abstract:
Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared within the past few years. We present in this article measurements of the heat capacity of hexagonal single crystals of GaN in the 20-1400K temperature range. We find that our data deviate significantly from the literatu…
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Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared within the past few years. We present in this article measurements of the heat capacity of hexagonal single crystals of GaN in the 20-1400K temperature range. We find that our data deviate significantly from the literature values for polycrystalline materials. The dependence of the heat capacity on the isotopic mass has also been investigated recently for monatomic crystals such as diamond, silicon, and germanium. Multi-atomic crystals are expected to exhibit a different dependence of these heat capacities on the masses of each of the isotopes present. These effects have not been investigated in the past. We also present \textit{first-principles} calculations of the dependence of the heat capacities of GaN, as a canonical binary material, on each of the Ga and N masses. We show that they are indeed different, as expected from the fact that the Ga mass affects mainly the acoustic, that of N the optic phonons. It is hoped that these calculations will encourage experimental measurements of the dependence of the heat capacity on isotopic masses in binary and more complex semiconductors.
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Submitted 21 March, 2005;
originally announced March 2005.
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Heat Capacity of Isotopically Enriched 28Si, 29Si and 30Si
Authors:
A. Gibin,
G. G. Devyatykh,
A. V. Gusev,
R. K. Kremer,
M. Cardona,
H. -J. Pohl
Abstract:
The heat capacity of isotopically enriched 28Si, 29Si, 30Si samples has been measured in the temperature range between 4K and 100K. The heat capacity of Si increases with isotopic mass. The values of the Debye temperature for the three isotopic varieties of silicon have been determined. Good agreement with the theoretical dependence of the Debye temperature on isotopic mass has been found.
The heat capacity of isotopically enriched 28Si, 29Si, 30Si samples has been measured in the temperature range between 4K and 100K. The heat capacity of Si increases with isotopic mass. The values of the Debye temperature for the three isotopic varieties of silicon have been determined. Good agreement with the theoretical dependence of the Debye temperature on isotopic mass has been found.
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Submitted 10 December, 2004;
originally announced December 2004.
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Effect of isotopic mass on the photoluminescence spectra of beta zinc sulfide
Authors:
F. J. Manjon,
M. Mollar,
B. Mari,
N. Garro,
A. Cantarero,
R. Lauck,
M. Cardona
Abstract:
Zinc sulfide is a wide bandgap semiconductor which crystallizes in either the wurtzite modification (a-ZnS), the zincblende modification (b-ZnS) or as one of several similar tetrahedrally coordinated polytypes. In this work, we report a photoluminescence study of different samples of isotopically pure b-ZnS crystals, and crystals with the natural isotopic abundances, at 15 and 77 K. The derivati…
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Zinc sulfide is a wide bandgap semiconductor which crystallizes in either the wurtzite modification (a-ZnS), the zincblende modification (b-ZnS) or as one of several similar tetrahedrally coordinated polytypes. In this work, we report a photoluminescence study of different samples of isotopically pure b-ZnS crystals, and crystals with the natural isotopic abundances, at 15 and 77 K. The derivatives of the free and bound exciton energies on isotopic mass have been obtained. They allow us to estimate the contribution of the zinc and sulfur vibrations to the bandgap renormalization energy by electron-phonon interaction. A two-oscillator model based on the zinc and sulfur renormalization energies has been used to account for the temperature dependence of the bandgap energy in ZnS. The results are compared with those found for other tetrahedrally coordinated semiconductors.
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Submitted 11 October, 2004;
originally announced October 2004.
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Electron-Phonon Interaction in Tetrahedral Semiconductors
Authors:
Manuel Cardona
Abstract:
Effects of electron-phonon interactions on the band structure can be experimentally investigated in detail by measuring the temperature dependence of energy gaps or critical points (van Hove singularities) of the optical excitation spectra. These studies have been complemented in recent years by observing the dependence of such spectra on isotopic mass whenever different stable isotopes of a giv…
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Effects of electron-phonon interactions on the band structure can be experimentally investigated in detail by measuring the temperature dependence of energy gaps or critical points (van Hove singularities) of the optical excitation spectra. These studies have been complemented in recent years by observing the dependence of such spectra on isotopic mass whenever different stable isotopes of a given atom are available at affordable prices. In crystals composed of different atoms, the effect of the vibration of each separate atom can thus be investigated by isotopic substitution. Because of the zero-point vibrations, such effects are present even at zero temperature (T = 0). In this paper we discuss state-of-the-art calculations of the dielectric function spectra and compare them with experimental results, with emphasis on the differences introduced by the electron-phonon interaction. The temperature dependence of various optical parameters will be described by means of one or two (in a few cases three) Einstein oscillators, except at the lowest temperatures where the T4 law (contrary to the Varshini T2 result) will be shown to apply. Increasing an isotopic mass increases the energy gaps, except in the case of monovalent Cu (e.g., CuCl) and possibly Ag (e.g., AgGaS2). It will be shown that the gaps of tetrahedral materials containing an element of the first row of the periodic table (C,N,O) are strongly affected by the electron-phonon interaction. It will be conjectured that this effect is related to the superconductivity recently observed in heavily boron-doped carbon.
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Submitted 12 October, 2004; v1 submitted 8 October, 2004;
originally announced October 2004.
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Long-lived optical phonons in ZnO studied with impulsive stimulated Raman scattering
Authors:
C. Aku-Leh,
J. Zhao,
R. Merlin,
J. Menendez,
M. Cardona
Abstract:
The anharmonic properties of the low-frequency E2 phonon in ZnO were measured using impulsive stimulated Raman scattering. At 5 K, the frequency and lifetime are (2.9787 +/- 0.0002) THz and (211 +/- 7) ps. The unusually long lifetime and the high accuracy in the determination of the frequency hold promise for applications in metrology, quantum computation and materials characterization. The temp…
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The anharmonic properties of the low-frequency E2 phonon in ZnO were measured using impulsive stimulated Raman scattering. At 5 K, the frequency and lifetime are (2.9787 +/- 0.0002) THz and (211 +/- 7) ps. The unusually long lifetime and the high accuracy in the determination of the frequency hold promise for applications in metrology, quantum computation and materials characterization. The temperature dependence of the lifetime is determined by two-phonon up-conversion decay contributions, which vanish at zero temperature. Results suggest that the lifetime is limited by isotopic disorder and that values in the nanosecond range may be achievable in isotopically-pure samples.
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Submitted 28 June, 2004;
originally announced June 2004.
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Isotopic disorder in Ge single crystals probed with 73Ge NMR
Authors:
S. V. Verkhovskii,
A. Yu. Yakubovsky,
B. Z. Malkin,
S. K. Saikin,
M. Cardona,
A. Trokiner,
V. I. Ozhogin
Abstract:
NMR spectra of 73 Ge (nuclear spin I = 9/2) in germanium single crystals with different isotopic compositions have been measured at the frequency of 17.4 MHz at room temperature. Due to the small concentration (~0.1%) of the magnetic (73 Ge) isotope, the magnetic dipole-dipole interaction is negligible in the samples studied, and the observed specific features of the resonance lineshapes (a narr…
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NMR spectra of 73 Ge (nuclear spin I = 9/2) in germanium single crystals with different isotopic compositions have been measured at the frequency of 17.4 MHz at room temperature. Due to the small concentration (~0.1%) of the magnetic (73 Ge) isotope, the magnetic dipole-dipole interaction is negligible in the samples studied, and the observed specific features of the resonance lineshapes (a narrow central peak and a wide plateau) are determined mainly by the quadrupole interaction of magnetic nuclei with the random electric field gradient (EFG) induced by the isotopic disorder. The second and fourth moments of the distribution function of the EFG are calculated taking into account local lattice deformations due to mass defects in the close neighborhood of the magnetic nuclei, as well as charge density redistributions and lattice strains induced by distant impurity isotopes. The simulated lineshapes, represented by a superposition of Gaussians corresponding to individual transitions between nuclear Zeeman sublevels, agree reasonably well with the measured spectra.
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Submitted 12 September, 2003; v1 submitted 13 June, 2003;
originally announced June 2003.
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Anharmonic Self-Energy of Phonons: Ab Initio Calculations and Neutron Spin Echo Measurements
Authors:
A. Debernardi,
F. de Geuser,
J. Kulda,
M. Cardona,
E. E. Haller
Abstract:
We have calculated (ab initio) and measured (by spin-echo techniques) the anharmonic self-energy of phonons at the X-point of the Brillouin zone for isotopically pure germanium. The real part agrees with former, less accurate, high temperature data obtained by inelastic neutron scattering on natural germanium. For the imaginary part our results provide evidence that transverse acoustic phonons a…
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We have calculated (ab initio) and measured (by spin-echo techniques) the anharmonic self-energy of phonons at the X-point of the Brillouin zone for isotopically pure germanium. The real part agrees with former, less accurate, high temperature data obtained by inelastic neutron scattering on natural germanium. For the imaginary part our results provide evidence that transverse acoustic phonons at the X-point are very long lived at low temperatures, i.e. their probability of decay approaches zero, as a consequence of an unusual decay mechanism allowed by energy conservation.
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Submitted 10 December, 2002;
originally announced December 2002.
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Evangelos Anastassakis: Scientist, Colleague and Friend
Authors:
M. Cardona
Abstract:
Proceedings contribution to Symposium in Memory of Prof. E. Anastassakis, Publ. Center of Technical University of Athens (2002). (contains no abstract).
Proceedings contribution to Symposium in Memory of Prof. E. Anastassakis, Publ. Center of Technical University of Athens (2002). (contains no abstract).
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Submitted 29 April, 2002;
originally announced April 2002.
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Electron-phonon renormalization of the absorption edge of the cuprous halides
Authors:
J. Serrano,
Ch. Schweitzer,
C. T. Lin,
K. Reimann,
M. Cardona,
D. Froehlich
Abstract:
Compared to most tetrahedral semiconductors, the temperature dependence of the absorption edges of the cuprous halides (CuCl, CuBr, CuI) is very small. CuCl and CuBr show a small increase of the gap $E_0$ with increasing temperature, with a change in the slope of $E_0$ vs. $T$ at around 150 K: above this temperature, the variation of $E_0$ with $T$ becomes even smaller. This unusual behavior has…
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Compared to most tetrahedral semiconductors, the temperature dependence of the absorption edges of the cuprous halides (CuCl, CuBr, CuI) is very small. CuCl and CuBr show a small increase of the gap $E_0$ with increasing temperature, with a change in the slope of $E_0$ vs. $T$ at around 150 K: above this temperature, the variation of $E_0$ with $T$ becomes even smaller. This unusual behavior has been clarified for CuCl by measurements of the low temperature gap vs. the isotopic masses of both constituents, yielding an anomalous negative shift with increasing copper mass. Here we report the isotope effects of Cu and Br on the gap of CuBr, and that of Cu on the gap of CuI. The measured isotope effects allow us to understand the corresponding temperature dependences, which we also report, to our knowledge for the first time, in the case of CuI. These results enable us to develop a more quantitative understanding of the phenomena mentioned for the three halides, and to interpret other anomalies reported for the temperature dependence of the absorption gap in copper and silver chalcogenides; similarities to the behavior observed for the copper chalcopyrites are also pointed out.
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Submitted 25 September, 2001;
originally announced September 2001.
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Dependence of the Excitation Energies of Boron in Diamond on Isotopic Mass
Authors:
M. Cardona
Abstract:
Kim et al. have reported a dependence of the infrared excitation energies of boron acceptors in diamond on the isotopic mass of the carbon atoms. We show that this change can be quantitatively interpreted as induced by a change in the hole effective mass.
Keywords: A. Diamond, A. Stable isotopes, D. Acceptor binding energies, D. Effective masses of holes
Kim et al. have reported a dependence of the infrared excitation energies of boron acceptors in diamond on the isotopic mass of the carbon atoms. We show that this change can be quantitatively interpreted as induced by a change in the hole effective mass.
Keywords: A. Diamond, A. Stable isotopes, D. Acceptor binding energies, D. Effective masses of holes
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Submitted 25 September, 2001;
originally announced September 2001.
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Renormalization of the Optical Response of Semiconductors by Electron-Phonon Interaction
Authors:
Manuel Cardona
Abstract:
In the past five years enormous progress has been made in the ab initio calculations of the optical response of electrons in semiconductors. The calculations include the Coulomb interaction between the excited electron and the hole left behind, as well as local field effects. However, they are performed under the assumption that the atoms occupy fixed equilibrium positions and do not include eff…
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In the past five years enormous progress has been made in the ab initio calculations of the optical response of electrons in semiconductors. The calculations include the Coulomb interaction between the excited electron and the hole left behind, as well as local field effects. However, they are performed under the assumption that the atoms occupy fixed equilibrium positions and do not include effects of the interaction of the lattice vibrations with the electronic states (electron-phonon interaction). This interaction shifts and broadens the energies at which structure in the optical spectra is observed, the corresponding shifts being of the order of the accuracy claimed for the ab initio calculations. These shifts and broadenings can be calculated with various degrees of reliability using a number of semiempirical and ab initio techniques, but no full calculations of the optical spectra including electron-phonon interaction are available to date.
This article discusses experimental and theoretical aspects of the renormalization of optical response functions by electron-phonon interaction, including both temperature and isotopic mass effects. Some of the theoretical techniques used can also be applied to analyze the renormalization of other response functions, such as the phonon spectral functions, the lattice parameters, and the elastic constants.
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Submitted 9 August, 2001;
originally announced August 2001.
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In-plane polarized collective modes in detwinned YBa$_{2}$Cu$_{3}$O$_{6.95}$ observed by spectral ellipsometry
Authors:
C. Bernhard,
T. Holden,
J. Humlíček,
D. Munzar,
A. Golnik,
M. Kläser,
Th. Wolf,
L. Carr,
C. Homes,
B. Keimer,
M. Cardona
Abstract:
The in-plane dielectric response of detwinned YBa$_{2}$Cu$_{3}$O$_{6.95}$ has been studied by far-infared ellipsometry. A surprisingly lare number of in-plane polarized modes are observed. Some of them correspond to pure phonon modes. Others posses a large electronic contribution which strongly increases in the superconducting state. The free carrier response and the collective modes exhibit a p…
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The in-plane dielectric response of detwinned YBa$_{2}$Cu$_{3}$O$_{6.95}$ has been studied by far-infared ellipsometry. A surprisingly lare number of in-plane polarized modes are observed. Some of them correspond to pure phonon modes. Others posses a large electronic contribution which strongly increases in the superconducting state. The free carrier response and the collective modes exhibit a pronounced a-b anisotropy. We discuss our results in terms of a CDW state in the 1-d CuO chains and induced charge density fluctuations within the 2-d CuO$_{2}$ planes.
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Submitted 27 July, 2001;
originally announced July 2001.
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Disorder-induced phonon self-energy of semiconductors with binary isotopic composition
Authors:
F. Widulle,
J. Serrano,
M. Cardona
Abstract:
Self-energy effects of Raman phonons in isotopically disordered semiconductors are deduced by perturbation theory and compared to experimental data. In contrast to the acoustic frequency region, higher-order terms contribute significantly to the self-energy at optical phonon frequencies. The asymmetric dependence of the self-energy of a binary isotope system $m_{1-x} M_x$ on the concentration of…
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Self-energy effects of Raman phonons in isotopically disordered semiconductors are deduced by perturbation theory and compared to experimental data. In contrast to the acoustic frequency region, higher-order terms contribute significantly to the self-energy at optical phonon frequencies. The asymmetric dependence of the self-energy of a binary isotope system $m_{1-x} M_x$ on the concentration of the heavier isotope mass x can be explained by taking into account second- and third-order perturbation terms. For elemental semiconductors, the maximum of the self-energy occurs at concentrations with $0.5<x<0.7$, depending on the strength of the third-order term. Reasonable approximations are imposed that allow us to derive explicit expressions for the ratio of successive perturbation terms of the real and the imaginary part of the self-energy. This basic theoretical approach is compatible with Raman spectroscopic results on diamond and silicon, with calculations based on the coherent potential approximation, and with theoretical results obtained using {\it ab initio} electronic theory. The extension of the formalism to binary compounds, by taking into account the eigenvectors at the individual sublattices, is straightforward. In this manner, we interpret recent experimental results on the disorder-induced broadening of the TO (folded) modes of SiC with a $^{13}{\rm C}$-enriched carbon sublattice. \cite{Rohmfeld00,Rohmfeld01}
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Submitted 5 July, 2001;
originally announced July 2001.
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Correlation between the Josephson coupling energy and the condensation energy in bilayer cuprate superconductors
Authors:
Dominik Munzar,
Christian Bernhard,
Todd Holden,
Andrzej Golnik,
Josef Humlicek,
Manuel Cardona
Abstract:
We review some previous studies concerning the intra-bilayer Josephson plasmons and present new ellipsometric data of the c-axis infrared response of almost optimally doped Bi_{2}Sr_{2}CaCu_{2}O_{8}. The c-axis conductivity of this compound exhibits the same kind of anomalies as that of underdoped YBa_{2}Cu_{3}O_{7-delta}. We analyze these anomalies in detail and show that they can be explained…
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We review some previous studies concerning the intra-bilayer Josephson plasmons and present new ellipsometric data of the c-axis infrared response of almost optimally doped Bi_{2}Sr_{2}CaCu_{2}O_{8}. The c-axis conductivity of this compound exhibits the same kind of anomalies as that of underdoped YBa_{2}Cu_{3}O_{7-delta}. We analyze these anomalies in detail and show that they can be explained within a model involving the intra-bilayer Josephson effect and variations of the electric field inside the unit cell. The Josephson coupling energies of different bilayer compounds obtained from the optical data are compared with the condensation energies and it is shown that there is a reasonable agreement between the values of the two quantities. We argue that the Josephson coupling energy, as determined by the frequency of the intra-bilayer Josephson plasmon, represents a reasonable estimate of the change of the effective c-axis kinetic energy upon entering the superconducting state. It is further explained that this is not the case for the estimate based on the use of the simplest ``tight-binding'' sum rule. We discuss possible interpretations of the remarkable agreement between the Josephson coupling energies and the condensation energies. The most plausible interpretation is that the interlayer tunneling of the Cooper pairs provides the dominant contribution to the condensation energy of the bilayer compounds; in other words that the condensation energy of these compounds can be accounted for by the interlayer tunneling theory. We suggest an extension of this theory, which may also explain the high values of T_{c} in the single layer compounds Tl_{2}Ba_{2}CuO_{6} and HgBa_{2}CuO_{4}, and we make several experimentally verifiable predictions.
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Submitted 7 April, 2001;
originally announced April 2001.
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Far-infrared c-axis conductivity of flux-grown Y$_{1-x}$Pr$_{x}$Ba$_{2}$Cu$_{3}$O$_{7}$ single crystals studied by spectral ellipsometry
Authors:
C. Bernhard,
T. Holden,
A. Golnik,
C. T. Lin,
M. Cardona
Abstract:
The far-infrared c-axis conductivity of flux-grown Y$_{1-x}$Pr$_{x}$Ba$_{2}$Cu$_{3}$O$_{7}$ single crystals with 0.2$\leq $x$\leq $0.5 has been studied by sepectral ellipsometry. We find that the c-axis response exhibits spectral features similar to deoxygenated underdoped YBa$_{2}$Cu$_{3}$O$_{7-δ}$, i.e., a pseudogap develops in the normal state, the phonon mode at 320 cm$^{-1}$ exhibits an ano…
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The far-infrared c-axis conductivity of flux-grown Y$_{1-x}$Pr$_{x}$Ba$_{2}$Cu$_{3}$O$_{7}$ single crystals with 0.2$\leq $x$\leq $0.5 has been studied by sepectral ellipsometry. We find that the c-axis response exhibits spectral features similar to deoxygenated underdoped YBa$_{2}$Cu$_{3}$O$_{7-δ}$, i.e., a pseudogap develops in the normal state, the phonon mode at 320 cm$^{-1}$ exhibits an anomalous T-dependence and an additional absorption peak forms at T. This suggests that the T$_{c}$ suppression in flux grown Pr-substituted crystals is caused by a decrease of the hole content and/or by carrier localization rather than by pair breaking.
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Submitted 11 May, 2000;
originally announced May 2000.
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The anomaly of the oxygen bond-bending mode at 320 cm$^{-1}$ and the additional absorption peak in the c-axis infrared conductivity of underdoped YBa$_{2}$Cu$_{3}$O$_{7-δ}$ single crystals revisited by ellipsometricmeasurements
Authors:
C. Bernhard,
D. Munzar,
A. Golnik,
C. T. Lin,
A. Wittlin,
J. Humlíček,
M. Cardona
Abstract:
We have performed ellipsometric measurements of the far-infrared c-axis dielectric response of underdoped YBa$_{2}$Cu$_{3}$O$_{7-δ}$ single crystals. Here we report a detailed analysis of the temperature-dependent renormalization of the oxygen bending phonon mode at 320 cm$^{-1}$ and the formation of the additional absorption peak around 400-500 cm$^{-1}$. For a strongly underdoped YBa$_{2}$Cu…
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We have performed ellipsometric measurements of the far-infrared c-axis dielectric response of underdoped YBa$_{2}$Cu$_{3}$O$_{7-δ}$ single crystals. Here we report a detailed analysis of the temperature-dependent renormalization of the oxygen bending phonon mode at 320 cm$^{-1}$ and the formation of the additional absorption peak around 400-500 cm$^{-1}$. For a strongly underdoped YBa$_{2}$Cu$_{3}$O$_{6.5}$ crystal with T$_{c}$=52 K we find that, in agreement with previous reports based on conventional reflection measurements, the gradual onset of both features occurs well above T$_{c}$ at T*$\sim $150 K. Contrary to some of these reports, however, our data establish that the phonon anomaly and the formation of the additional peak exhibit very pronounced and steep changes right at T$_{c}$. For a less underdoped YBa$_{2}$Cu$_{3}$O$_{6.75}$ crystal with T$_{c}$=80 K, the onset temperature of the phonon anomaly almost coincides with T$_{c}$. Also in contrast to some previous reports, we find for both crystals that a sizeable fraction of the spectral weight of the additional absorption peak cannot be accounted for by the spectral-weight loss of the phonon modes but instead arises from a redistribution of the electronic continuum. Our ellipsometric data are consistent with a model where the bilayer cuprate compounds are treated as a superlattice of intra- and inter-bilayer Josephson-junctions.
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Submitted 3 August, 1999;
originally announced August 1999.
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Resonant Raman scattering in NaV2O5 as a probe of its electronic structure
Authors:
M. J. Konstantinovic,
Z. V. Popovic,
T. Ruf,
M. Cardona,
A. N. Vasil'ev,
M. Isobe,
Y. Ueda
Abstract:
In order to investigate the origin of the phase transition observed in NaV$_2$O$_5$, as well as its electronic structure, we have measured Raman intensities as a function of the laser wavelength above and below the phase transition temperature. In the polarized Raman spectra at room temperature we observe resonant enhancement of the 969 $cm^{-1}$ phonon mode when the laser energy approaches 2.7…
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In order to investigate the origin of the phase transition observed in NaV$_2$O$_5$, as well as its electronic structure, we have measured Raman intensities as a function of the laser wavelength above and below the phase transition temperature. In the polarized Raman spectra at room temperature we observe resonant enhancement of the 969 $cm^{-1}$ phonon mode when the laser energy approaches 2.7 eV, presumably related to the (p-d) electron hopping band, $O_3$($p_y$)-V($d_{xy}$), at 3.2 eV. The 969 $cm^{-1}$ mode originates from the stretching vibrations along the c-axis involving the V-$O_1$ bonds. Since an ellipsometric determination of the dielectric function $ε_{cc}$ yields no structure in the 1.7 to 5.5 eV photon energy range, we conclude that plane bonds couple strongly with the apical oxygens leading to a large Raman efficiency. In the low-temperature Raman spectra, almost all modes that become active below the phase transition temperature T$_c$=34 K show resonant behavior. The most interesting ones, those at 66 and 106 $cm^{-1}$, possibly of magnetic origin, exhibit a resonant intensity enhancement, approximately by an order of magnitude, for laser photon energies around 1.85 eV with respect to 2.43 eV. This resonance effect may be associated with a weak absorption band around 2 eV. Finally, a destructive interference between the resonant and the nonresonant contribution to the Raman scattering amplitude (i.e. an antiresonance) is found in the spectra for most of the (bb) low-temperature modes.
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Submitted 16 July, 1999;
originally announced July 1999.
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Anomalies of the infrared-active phonons in underdoped YBCO as an evidence for the intra-bilayer Josephson effect
Authors:
D. Munzar,
C. Bernhard,
A. Golnik,
J. Humlicek,
M. Cardona
Abstract:
The spectra of the far-infrared c-axis conductivity of underdoped YBCO crystals exhibit dramatic changes of some of the phonon peaks when going from the normal to the superconducting state. We show that the most striking of these anomalies can be naturally explained by changes of the local fields acting on the ions arising from the onset of inter- and intra-bilayer Josephson effects.
The spectra of the far-infrared c-axis conductivity of underdoped YBCO crystals exhibit dramatic changes of some of the phonon peaks when going from the normal to the superconducting state. We show that the most striking of these anomalies can be naturally explained by changes of the local fields acting on the ions arising from the onset of inter- and intra-bilayer Josephson effects.
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Submitted 18 March, 1999;
originally announced March 1999.
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Electronic Raman scattering in YBCO and other superconducting cuprates
Authors:
Thomas Strohm,
Manuel Cardona
Abstract:
Superconductivity induced structures in the electronic Raman spectra of high-Tc superconductors are computed using the results of ab initio LDA-LMTO three-dimensional band structure calculations via numerical integrations of the mass fluctuations, either in the whole 3D Brillouin zone or limiting the integrations to the Fermi surface. The results of both calculations are rather similar, the Bril…
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Superconductivity induced structures in the electronic Raman spectra of high-Tc superconductors are computed using the results of ab initio LDA-LMTO three-dimensional band structure calculations via numerical integrations of the mass fluctuations, either in the whole 3D Brillouin zone or limiting the integrations to the Fermi surface. The results of both calculations are rather similar, the Brillouin zone integration yielding additional weak structures related to the extended van Hove singularities. Similar calculations have been performed for the normal state of these high-Tc cuprates. Polarization configurations have been investigated and the results have been compared to experimental spectra. The assumption of a simple d_(x^2-y^2)-like gap function allows us to explain a number of experimental features but is hard to reconcile with the relative positions of the A1g and B1g peaks.
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Submitted 16 September, 1996;
originally announced September 1996.
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Magnetic-field-enhanced outgoing excitonic resonance in multi-phonon Raman scattering from polar semiconductors
Authors:
I. G. Lang,
A. V. Prokhorov,
M. Cardona,
V. I. Belitsky,
A. Cantarero,
S. T. Pavlov
Abstract:
A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a…
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A combined scattering mechanism involving the states of free electron-hole pairs (exciton continuum) and discrete excitons as intermediate states in the multi-phonon Raman scattering leads to (1) a strong increase of the scattering efficiency in the presence of a high magnetic field and to (2) an outgoing excitonic resonance: the two features are not compatible when only free pairs (leading to a strong increase of the scattering efficiency under the applied magnetic field) or discrete excitons (resulting in the outgoing resonance at the excitonic gap) are taken into account.
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Submitted 21 February, 1996;
originally announced February 1996.
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Comparison of Bond Character in Hydrocarbons and Fullerenes
Authors:
D. W. Snoke,
M. Cardona,
S. Sanguinetti,
G. Benedek
Abstract:
We present a comparison of the bond polarizabilities for carbon-carbon bonds in hydrocarbons and fullerenes, using two different models for the fullerene Raman spectrum and the results of Raman measurements on ethane and ethylene. We find that the polarizabilities for single bonds in fullerenes and hydrocarbons compare well, while the double bonds in fullerenes have greater polarizability than i…
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We present a comparison of the bond polarizabilities for carbon-carbon bonds in hydrocarbons and fullerenes, using two different models for the fullerene Raman spectrum and the results of Raman measurements on ethane and ethylene. We find that the polarizabilities for single bonds in fullerenes and hydrocarbons compare well, while the double bonds in fullerenes have greater polarizability than in ethylene.
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Submitted 20 February, 1996;
originally announced February 1996.
