Revealing the Anisotropic Thermal Conductivity of Black Phosphorus using the Time-Resolved Magneto-Optical Kerr Effect
Authors:
Jie Zhu,
Haechan Park,
Jun-Yang Chen,
Xiaokun Gu,
Hu Zhang,
Sreejith Karthikeyan,
Nathaniel Wendel,
Stephen A. Campbell,
Matthew Dawber,
Xu Du,
Mo Li,
Jian-Ping Wang,
Ronggui Yang,
Xiaojia Wang
Abstract:
Black phosphorus (BP) has emerged as a direct-bandgap semiconducting material with great application potentials in electronics, photonics, and energy conversion. Experimental characterization of the anisotropic thermal properties of BP, however, is extremely challenging due to the lack of reliable and accurate measurement techniques to characterize anisotropic samples that are micrometers in size.…
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Black phosphorus (BP) has emerged as a direct-bandgap semiconducting material with great application potentials in electronics, photonics, and energy conversion. Experimental characterization of the anisotropic thermal properties of BP, however, is extremely challenging due to the lack of reliable and accurate measurement techniques to characterize anisotropic samples that are micrometers in size. Here, we report measurement results of the anisotropic thermal conductivity of bulk BP along three primary crystalline orientations, using the novel time-resolved magneto-optical Kerr effect (TR-MOKE) with enhanced measurement sensitivities. Two-dimensional beam-offset TR-MOKE signals from BP flakes yield the thermal conductivity along the zigzag crystalline direction to be 84 ~ 101 W/(m*K), nearly three times as large as that along the armchair direction (26 ~ 36 W/(m*K)). The through-plane thermal conductivity of BP ranges from 4.3 to 5.5 W/(m*K). The first-principles calculation was performed for the first time to predict the phonon transport in BP both along the in-plane zigzag and armchair directions and along the through-plane direction. This work successfully unveiled the fundamental mechanisms of anisotropic thermal transport along the three crystalline directions in bulk BP, as demonstrated by the excellent agreement between our first-principles-based theoretical predictions and experimental characterizations on the anisotropic thermal conductivities of bulk BP.
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Submitted 21 December, 2015;
originally announced December 2015.
Impact of nitrogen incorporation on interface states in (100)Si/HfO2
Authors:
Y. G. Fedorenko,
L. Truong,
V. V. Afanas'ev,
A. Stesmans,
Z. Zhang,
S. A. Campbell
Abstract:
The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The nitrogen in the (100)Si/HfO2 entity is found to increase the trap density, most significantly, in the upper part of Si band gap, in which energy range nitrogen incorp…
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The influence of nitrogen incorporation on the energy distribution of interface states in the (100)Si/HfO2 system and their passivation by hydrogen have been studied. The results are compared to those of nominally N-free samples. The nitrogen in the (100)Si/HfO2 entity is found to increase the trap density, most significantly, in the upper part of Si band gap, in which energy range nitrogen incorporation prevents passivation of interface traps by hydrogen. At the same time, passivation of fast interface traps in the lower part of the band gap proceeds efficiently, provided the thickness of the nitrogen containing interlayer is kept within a few monolayers. The minimal interface trap density below the midgap achieved after passivation in H2 is dominated by the presence of slow N-related states, likely located in the insulator. As inferred from capacitance-voltage and ac conductance analysis, the lowest density of electrically active defects [(8-9)x10 10 eV-1cm-2 at 0.4-0.5 eV from the top of the Si valence band edge] is achieved both in the N-free and N-containing (100)Si/HfO2 structuresafter post-deposition anneal at 800C in (N2+5%O2) followed by passivation in molecular hydrogen at 400C for 30 min.
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Submitted 25 June, 2014;
originally announced June 2014.
