Showing 1–35 of 35 results for author: Campbell, M

Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication

Authors: E. M. Anderson, C. R. Allemang, A. J. Leenheer, S. W. Schmucker, J. A. Ivie, D. M. Campbell, W. Lepkowski, X. Gao, P. Lu, C. Arose, T. -M. Lu, C. Halsey, T. D. England, D. R. Ward, D. A. Scrymgeour, S. Misra

Abstract: Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure, and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhanc… ▽ More Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure, and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance, and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show the APAM module has only affected the transistor through the addition of a resistance, and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool which could be introduced into manufacturing environments, greatly expanding access to this technology, and inspiring a new generation of devices with it. △ Less

Submitted 6 May, 2025; originally announced May 2025.

Report number: SAND2025-05438O

Dynamic Carrier Modulation via Nonlinear Acoustoelectric Transport in van der Waals Heterostructures

Authors: Timothy J. McSorley, Kaustubh Simha, James E. Corcoran, Izzie J. Catanzaro, Haochong Zhang, Meitong Yin, Tzu-Ming Lu, Davis Thuillier, Marshall A. Campbell, Thomas Scaffidi, Luis A. Jauregui

Abstract: Dynamically manipulating carriers in van der Waals heterostructures could enable solid-state quantum simulators with tunable lattice parameters. A key requirement is forming deep potential wells to reliably trap excitations. Here, we report the observation of nonlinear acoustoelectric transport and dynamic carrier modulation in boron nitride-encapsulated graphene devices coupled to intense surface… ▽ More Dynamically manipulating carriers in van der Waals heterostructures could enable solid-state quantum simulators with tunable lattice parameters. A key requirement is forming deep potential wells to reliably trap excitations. Here, we report the observation of nonlinear acoustoelectric transport and dynamic carrier modulation in boron nitride-encapsulated graphene devices coupled to intense surface acoustic waves (SAWs) on LiNbO3 substrates. SAWs generate strong acoustoelectric current densities (JAE), transitioning from linear to nonlinear regimes with increasing SAW intensity. In the nonlinear regime, periodic carrier (electrons, holes, or their mixtures) stripes emerge. Using counter-propagating SAWs, we create standing SAWs (SSAWs) to dynamically manipulate charge distributions without static gates. The saturation of JAE, attenuation transitions, and tunable resistance peaks confirm strong carrier localization. These results establish SAWs as a powerful tool for controlling carrier dynamics in two-dimensional (2D) materials, paving the way for the development of time-dependent quantum systems and acoustic lattices for quantum simulation. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Rydberg exciton states and near-infrared light-emitting diode in monolayer MoTe2 devices

Authors: Sebastian Yepez Rodriguez, Marshall A. Campbell, Jinyu Liu, Luis A. Jauregui

Abstract: Excitons, or bound electron-hole pairs, play a crucial role in the optical response of monolayer, 2H-phase transition-metal dichalcogenides (TMDs). They hold significant promise for the development of novel quantum opto-electronic devices due to their large binding energies and strong spin-orbit coupling. Among the monolayer TMDs, MoTe2 stands out because of its bandgap in the near-infrared (NIR)… ▽ More Excitons, or bound electron-hole pairs, play a crucial role in the optical response of monolayer, 2H-phase transition-metal dichalcogenides (TMDs). They hold significant promise for the development of novel quantum opto-electronic devices due to their large binding energies and strong spin-orbit coupling. Among the monolayer TMDs, MoTe2 stands out because of its bandgap in the near-infrared (NIR) regime. Here, we report the experimental observation of NIR Rydberg excitons and conduction band-split charged excitons, in high-quality, boron nitride (BN)-encapsulated monolayer MoTe2 devices, probed by photoluminescence and electroluminescence spectroscopy. By employing a graphite bottom gate, we successfully modulate the emission intensity of various excitonic species. Additionally, our device fabrication process within an argon-filled glove box ensures clean TMD/metal electrode interfaces, enabling the construction of p-n junctions near the electrodes. Our work significantly advances our understanding of excitons in monolayer TMDs and contributes to the application of MoTe2 in NIR quantum opto-electronic devices. △ Less

Submitted 28 March, 2024; originally announced March 2024.

Coherent Spin-Phonon Coupling in the Layered Ferrimagnet Mn3Si2Te6

Authors: L. M. Martinez, Y. Liu, C. Petrovic, S. Haldar, T. Griepe, U. Atxitia, M. Campbell, M. Pettes, R. P. Prasankumar, E. J. G. Santos, S. R. Singamaneni, P. Padmanabhan

Abstract: We utilize ultrafast photoexcitation to drive coherent lattice oscillations in the layered ferrimagnetic crystal Mn3Si2Te6, which significantly stiffen below the magnetic ordering temperature. We suggest that this is due to an exchange-mediated contraction of the lattice, stemming from strong magneto-structural coupling in this material. Additionally, simulations of the transient incoherent dynami… ▽ More We utilize ultrafast photoexcitation to drive coherent lattice oscillations in the layered ferrimagnetic crystal Mn3Si2Te6, which significantly stiffen below the magnetic ordering temperature. We suggest that this is due to an exchange-mediated contraction of the lattice, stemming from strong magneto-structural coupling in this material. Additionally, simulations of the transient incoherent dynamics reveal the importance of spin relaxation channels mediated by optical and acoustic phonon scattering. Our findings highlight the importance of spin-lattice coupling in van der Waals magnets and a promising route for their dynamic optical control through their intertwined electronic, lattice, and spin degrees of freedom. △ Less

Submitted 28 August, 2023; originally announced August 2023.

Spintronic Quantum Phase Transition in a $Graphene/Pb_{0.24}Sn_{0.76}Te$ Heterostructure with Giant Rashba Spin-Orbit Coupling

Authors: Jennifer E. DeMell, Ivan Naumov, Gregory M. Stephen, Nicholas A. Blumenschein, Y. -J. Leo Sun, Adrian Fedorko, Jeremy T. Robinson, Paul M. Campbell, Patrick J. Taylor, Don Heiman, Pratibha Dev, Aubrey T. Hanbicki, Adam L. Friedman

Abstract: Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.76Te and graphene due to contact of a polar with a nonpolar surface and the resulting changes in electronic structure needed to avoid polar catastrophe… ▽ More Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.76Te and graphene due to contact of a polar with a nonpolar surface and the resulting changes in electronic structure needed to avoid polar catastrophe. We study the spintronic properties of this heterostructure with non-local spin valve devices. We observe spin-momentum locking at lower temperatures that transitions to regular spin channel transport only at ~40 K. Hanle spin precession measurements show a spin relaxation time as high as 2.18 ns. Density functional theory calculations confirm that the spin-momentum locking is due to a giant Rashba effect in the material and that the phase transition is a Lifshitz transition. The theoretically predicted Lifshitz transition is further evident in the phase transition-like behavior in the Landé g-factor and spin relaxation time. △ Less

Submitted 24 July, 2023; originally announced July 2023.

Comments: 33 pages, 17 figures, supplemental information included

Journal ref: Adv. Funct. Mat., 2311875 (2023)

Correlated Excitonic Signatures in a Nanoscale van der Waals Antiferromagnet

Authors: Vigneshwaran Chandrasekaran, Christopher R. DeLaney, David Parobek, Christopher A. Lane, Jian-Xin Zhu, Xiangzhi Li, Huan Zhao, Cong Tai Trinh, Marshall A. Campbell, Andrew C. Jones, Matthew M. Schneider, John Watt, Michael T. Pettes, Sergei A. Ivanov, Andrei Piryatinski, David H. Dunlap, Han Htoon

Abstract: Composite quasi-particles with emergent functionalities in spintronic and quantum information science can be realized in correlated materials due to entangled charge, spin, orbital, and lattice degrees of freedom. Here we show that by reducing the lateral dimension of correlated antiferromagnet NiPS3 flakes to tens of nanometers, we can switch-off the bulk spin-orbit entangled exciton in the near-… ▽ More Composite quasi-particles with emergent functionalities in spintronic and quantum information science can be realized in correlated materials due to entangled charge, spin, orbital, and lattice degrees of freedom. Here we show that by reducing the lateral dimension of correlated antiferromagnet NiPS3 flakes to tens of nanometers, we can switch-off the bulk spin-orbit entangled exciton in the near-infrared (1.47 eV) and activate visible-range (1.8 to 2.2 eV) transitions with charge-transfer character. These ultra-sharp lines (<120 ueV at 4.2 K) share the spin-correlated nature of the bulk exciton by displaying a Neel temperature dependent linear polarization. Furthermore, exciton photoluminescence lineshape analysis reveals a polaronic character via coupling with at-least 3 phonon modes and a comb-like Stark effect through discretization of charges in each layer. These findings augment the knowledge on the many-body nature of excitonic quasi-particles in correlated antiferromagnets and also establish the nanoscale platform as promising for maturing integrated magneto-optic devices. △ Less

Submitted 3 June, 2023; originally announced June 2023.

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Authors: Laisi Chen, Amy X. Wu, Naol Tulu, Joshua Wang, Adrian Juanson, Kenji Watanabe, Takashi Taniguchi, Michael T. Pettes, Marshall Campbell, Chaitanya A. Gadre, Yinong Zhou, Hangman Chen, Penghui Cao, Luis A. Jauregui, Ruqian Wu, Xiaoqing Pan, Javier D. Sanchez-Yamagishi

Abstract: Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron n… ▽ More Confining materials to two-dimensional forms changes the behavior of electrons and enables new devices. However, most materials are challenging to produce as uniform thin crystals. Here, we present a new synthesis approach where crystals are grown in a nanoscale mold defined by atomically-flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mold made of hexagonal boron nitride (hBN), we grow ultraflat bismuth crystals less than 10 nanometers thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-molded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov-de Haas quantum oscillations originating from the (111) surface state Landau levels, which have eluded previous studies. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW-mold growth technique establishes a platform for electronic studies and control of bismuth's Rashba surface states and topological boundary modes. Beyond bismuth, the vdW-molding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure. △ Less

Submitted 9 October, 2023; v1 submitted 14 November, 2022; originally announced November 2022.

Journal ref: Nature Materials 23, 741-746 (2024)

Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe

Authors: Gregory M. Stephen, Ivan Naumov, Nicholas A. Blumenschein, Yi-Jan Leo Sun, Jennifer E. DeMell, Sharmila Shirodkar, Pratibha Dev, Patrick J. Taylor, Jeremy T. Robinson, Paul M. Campbell, Aubrey T. Hanbicki, Adam L. Friedman

Abstract: While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb0.24Sn0.7… ▽ More While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb0.24Sn0.76Te (PST) are widely investigated for spintronic applications because graphene's high carrier mobility and PST's topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20,000 cm2/Vs and a magnetoresistance approaching 100 percent, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/non-polar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of remarkable behaviors in these novel materials. △ Less

Submitted 17 October, 2022; v1 submitted 27 July, 2022; originally announced July 2022.

Accelerated Lifetime Testing and Analysis of Delta-doped Silicon Test Structures

Authors: Connor Halsey, Jessica Depoy, DeAnna M. Campbell, Daniel R. Ward, Evan M. Anderson, Scott W. Schmucker, Jeffrey A. Ivie, Xujiao Gao, David A. Scrymgeour, Shashank Misra

Abstract: As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of s… ▽ More As transistor features shrink beyond the 2 nm node, studying and designing for atomic scale effects become essential. Being able to combine conventional CMOS with new atomic scale fabrication routes capable of creating 2D patterns of highly doped phosphorus layers with atomic precision has implications for the future of digital electronics. This work establishes the accelerated lifetime tests of such doped layers, showing that these materials survive high current (>3.0 MA/cm2) and 300$^{\circ}$C for greater than 70 days and are still electrically conductive. The doped layers compare well to failures in traditional metal layers like aluminum and copper where mean time to failure at these temperatures and current densities would occur within hours. It also establishes that these materials are more stable than metal features, paving the way toward their integration with operational CMOS. △ Less

Submitted 24 February, 2022; v1 submitted 22 October, 2021; originally announced October 2021.

Comments: In IEEE Trans. Dev. Mater. Rel. (2022). Copyright 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, including reprinting/republishing this material for advertising or promotional purposes, collecting new collected works for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

Experimental measurement of the intrinsic excitonic wavefunction

Authors: Michael K. L. Man, Julien Madéo, Chakradhar Sahoo, Kaichen Xie, Marshall Campbell, Vivek Pareek, Arka Karmakar, E Laine Wong, Abdullah Al-Mahboob, Nicholas S. Chan, David R. Bacon, Xing Zhu, Mohamed Abdelrasoul, Xiaoquin Li, Tony F. Heinz, Felipe H. da Jornada, Ting Cao, Keshav M. Dani

Abstract: An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoem… ▽ More An exciton, a two-body composite quasiparticle formed of an electron and hole, is a fundamental optical excitation in condensed-matter systems. Since its discovery nearly a century ago, a measurement of the excitonic wavefunction has remained beyond experimental reach. Here, we directly image the excitonic wavefunction in reciprocal space by measuring the momentum distribution of electrons photoemitted from excitons in monolayer WSe2. By transforming to real space, we obtain a visual of the distribution of the electron around the hole in an exciton. Further, by also resolving the energy coordinate, we confirm the elusive theoretical prediction that the photoemitted electron exhibits an inverted energy-momentum dispersion relationship reflecting the valence band where the partner hole remains, rather than that of conduction-band states of the electron. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Comments: 27 pages

Directly visualizing the momentum forbidden dark excitons and their dynamics in atomically thin semiconductors

Authors: Julien Madéo, Michael K. L. Man, Chakradhar Sahoo, Marshall Campbell, Vivek Pareek, E Laine Wong, Abdullah Al Mahboob, Nicholas S. Chan, Arka Karmakar, Bala Murali Krishna Mariserla, Xiaoqin Li, Tony F. Heinz, Ting Cao, Keshav M. Dani

Abstract: Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical t… ▽ More Resolving the momentum degree of freedom of excitons - electron-hole pairs bound by the Coulomb attraction in a photoexcited semiconductor, has remained a largely elusive goal for decades. In atomically thin semiconductors, such a capability could probe the momentum forbidden dark excitons, which critically impact proposed opto-electronic technologies, but are not directly accessible via optical techniques. Here, we probe the momentum-state of excitons in a WSe2 monolayer by photoemitting their constituent electrons, and resolving them in time, momentum and energy. We obtain a direct visual of the momentum forbidden dark excitons, and study their properties, including their near-degeneracy with bright excitons and their formation pathways in the energy-momentum landscape. These dark excitons dominate the excited state distribution - a surprising finding that highlights their importance in atomically thin semiconductors. △ Less

Submitted 1 May, 2020; originally announced May 2020.

Comments: 34 pages

Journal ref: Science, 04 Dec 2020: Vol. 370, Issue 6521, pp. 1199-1204

Atomic Precision Advanced Manufacturing for Digital Electronics

Authors: Daniel R. Ward, Scott W. Schmucker, Evan M. Anderson, Ezra Bussmann, Lisa Tracy, Tzu-Ming Lu, Leon N. Maurer, Andrew Baczewski, Deanna M. Campbell, Michael T. Marshall, Shashank Misra

Abstract: An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progre… ▽ More An exponential increase in the performance of silicon microelectronics and the demand to manufacture in great volumes has created an ecosystem that requires increasingly complex tools to fabricate and characterize the next generation of chips. However, the cost to develop and produce the next generation of these tools has also risen exponentially, to the point where the risk associated with progressing to smaller feature sizes has created pain points throughout the ecosystem. The present challenge includes shrinking the smallest features from nanometers to atoms (10 nm corresponds to 30 silicon atoms). Relaxing the requirement for achieving scalable manufacturing creates the opportunity to evaluate ideas not one or two generations into the future, but at the absolute physical limit of atoms themselves. This article describes recent advances in atomic precision advanced manufacturing (APAM) that open the possibility of exploring opportunities in digital electronics. Doing so will require advancing the complexity of APAM devices and integrating APAM with CMOS. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Electronic Device Failure Analysis, 22 (2020) 1:4-10

Low Thermal Budget High-k/Metal Surface Gate for Buried Donor-Based Devices

Authors: Evan M. Anderson, DeAnna M. Campbell, Leon N. Maurer, Andrew D. Baczewski, Michael T. Marshall, Tzu-Ming Lu, Ping Lu, Lisa A. Tracy, Scott W. Schmucker, Daniel R. Ward, Shashank Misra

Abstract: Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the invest… ▽ More Atomic precision advanced manufacturing (APAM) offers creation of donor devices in an atomically thin layer doped beyond the solid solubility limit, enabling unique device physics. This presents an opportunity to use APAM as a pathfinding platform to investigate digital electronics at the atomic limit. Scaling to smaller transistors is increasingly difficult and expensive, necessitating the investigation of alternative fabrication paths that extend to the atomic scale. APAM donor devices can be created using a scanning tunneling microscope (STM). However, these devices are not currently compatible with industry standard fabrication processes. There exists a tradeoff between low thermal budget (LT) processes to limit dopant diffusion and high thermal budget (HT) processes to grow defect-free layers of epitaxial Si and gate oxide. To this end, we have developed an LT epitaxial Si cap and LT deposited Al2O3 gate oxide integrated with an atomically precise single-electron transistor (SET) that we use as an electrometer to characterize the quality of the gate stack. The surface-gated SET exhibits the expected Coulomb blockade behavior. However, the leverage of the gate over the SET is limited by defects in the layers above the SET, including interfaces between the Si and oxide, and structural and chemical defects in the Si cap. We propose a more sophisticated gate stack and process flow that is predicted to improve performance in future atomic precision devices. △ Less

Submitted 11 June, 2020; v1 submitted 20 February, 2020; originally announced February 2020.

Comments: Version accepted for open access publication in Journal of Physics: Materials. Added keywords, additional text to the abstract, additional discussion of interfaces, and additional references. Consolidated references into one section at the end of the document instead of one part for the main article and one part for the supplementary material

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

Authors: M. J. Curry, M. Rudolph, T. D. England, A. M. Mounce, R. M. Jock, C. Bureau-Oxton, P. Harvey-Collard, P. A. Sharma, J. M. Anderson, D. M. Campbell, J. R. Wendt, D. R. Ward, S. M. Carr, M. P. Lilly, M. S. Carroll

Abstract: High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance o… ▽ More High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/$\sqrt{\textrm{Hz}}$ range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/$\sqrt{\textrm{Hz}}$ and 400 μe/$\sqrt{\textrm{Hz}}$, respectively. For the single-shot readout performed, less than 10 μs is required for both circuits to achieve bit error rates below $10^{-3}$, which is a putative threshold for quantum error correction. △ Less

Submitted 14 January, 2019; originally announced January 2019.

Comments: 11 pages, 13 figures

Moiré Excitons in Van der Waals Heterostructures

Authors: Kha Tran, Galan Moody, Fengcheng Wu, Xiaobo Lu, Junho Choi, Akshay Singh, Jacob Embley, André Zepeda, Marshall Campbell, Kyounghwan Kim, Amritesh Rai, Travis Autry, Daniel A. Sanchez, Takashi Taniguchi, Kenji Watanabe, Nanshu Lu, Sanjay K. Banerjee, Emanuel Tutuc, Li Yang, Allan H. MacDonald, Kevin L. Silverman, Xiaoqin Li

Abstract: In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlati… ▽ More In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moiré potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moiré potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications. △ Less

Submitted 10 July, 2018; originally announced July 2018.

All-optical lithography process for contacting atomically-precise devices

Authors: Daniel R. Ward, Michael T. Marshall, DeAnna M. Campbell, Tzu-Ming Lu, Justin C. Koepke, David A. Scrymgeour, Ezra Bussmann, Shashank Misra

Abstract: We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a pat… ▽ More We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process. △ Less

Submitted 8 August, 2017; originally announced August 2017.

Nonlinear Raman Shift Induced by Exciton-to-Trion Transformation in Suspended Trilayer MoS2

Authors: Hossein Taghinejad, Mohammad Taghinejad, Alexey Tarasov, Meng-Yen Tsai, Amir H. Hosseinnia, Philip M. Campbell, Ali A. Eftekhar, Eric M. Vogel, Ali Adibi

Abstract: Layered two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted remarkable attention because of their unique physical properties. Here, we use photoluminescence (PL) and Raman spectroscopy to study the formation of the so- called trions in a synthesized freestanding trilayer MoS2. A trion is a charged quasi-particle formed by adding one electron or hole to a… ▽ More Layered two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted remarkable attention because of their unique physical properties. Here, we use photoluminescence (PL) and Raman spectroscopy to study the formation of the so- called trions in a synthesized freestanding trilayer MoS2. A trion is a charged quasi-particle formed by adding one electron or hole to a neutral exciton (a bound electron-hole pair). We demonstrate accurate control over the transformation of excitons to trions by tuning the power of the optical pump (laser). Increasing the power of the excitation laser beyond a certain threshold (~ 4 mW) allows modulation of trion-to-exciton PL intensity ratio as well as the spectral linewidth of both trions and excitons. Via a systematic and complementary Raman analysis we disclose a strong coupling between laser induced exciton-to-trion transformation and the characteristic phononic vibrations of MoS2. The onset of such an optical transformation corresponds to the onset of a previously unknown nonlinear Raman shift of the in-plane (E12g) and out-of-plane (A1g) vibrational modes. This coupling directly affects the well-known linear red-shift of the A1g and E12g vibrations due to heating at low laser powers, and changes it to a nonlinear and non-monotonic dependence with a blue-shift in the high laser power regime. Local reduction of the electron density upon exciton-to-trion transformation is found to be the underlying mechanism for the blue-shift at high laser powers. Our findings enrich our knowledge about the strong coupling of photonic and phononic properties in 2D semiconductors, and enable reliable interpretation of PL and Raman spectra in the high laser power regimes. △ Less

Submitted 2 February, 2015; originally announced February 2015.

Comments: 19 pages, 4 figures

Three-dimensional imaging of dislocation propagation during crystal growth and dissolution

Authors: Jesse N. Clark, Johannes Ihli, Anna S. Schenk, Yi-Yeoun Kim, Alexander N. Kulak, James M. Campbell, Gareth Nisbet, Fiona C. Meldrum, Ian K. Robinson

Abstract: Atomic level defects such as dislocations play key roles in determining the macroscopic properties of crystalline materials. Their effects are important and wide-reaching, and range from increased chemical reactivity to enhanced mechanical properties to vastly increased rates of crystal growth. Dislocations have therefore been widely studied using traditional techniques such as X-ray diffraction (… ▽ More Atomic level defects such as dislocations play key roles in determining the macroscopic properties of crystalline materials. Their effects are important and wide-reaching, and range from increased chemical reactivity to enhanced mechanical properties to vastly increased rates of crystal growth. Dislocations have therefore been widely studied using traditional techniques such as X-ray diffraction (XRD) and optical imaging. More recently, advances in microscopy have allowed their direct visualization. Atomic force microscopy (AFM) has enabled the 2D study of single dislocations while transmission electron microscopy (TEM), which was initially limited to 2D projections of thin specimens, can now visualize strain fields in 3D with near atomic resolution. However, these techniques can- not offer in situ, 3D imaging of the formation or movement of dislocations during dynamic processes such as crystal growth and dissolution. Here, we describe how Bragg Coherent Diffraction Imaging (BCDI) can be used to visualize in 3D the entire network of dislocations present within an individual crystal. Using calcite (CaCO3) single crystals, we also use BCDI to monitor the propagation of the dislocation network during repeated growth and dissolution cycles, and show how this is intimately linked to the growth and dissolution mechanisms. These investigations demonstrate the potential of BCDI for studying the mechanisms underlying the response of crystalline materials to external stimuli. △ Less

Submitted 12 January, 2015; originally announced January 2015.

A Trapped Field of 17.6 T in Melt-Processed, Bulk Gd-Ba-Cu-O Reinforced with Shrink-Fit Steel

Authors: John H. Durrell, Anthony R. Dennis, Jan Jaroszynski, Mark D. Ainslie, Kysen G. B. Palmer, Yunhua Shi, Archie M. Campbell, John Hull, Mike Strasik, Eric Hellstrom, David A. Cardwell

Abstract: The ability of large grain, REBa$_{2}$Cu$_{3}$O$_{7-δ}$ [(RE)BCO; RE = rare earth] bulk superconductors to trap magnetic field is determined by their critical current. With high trapped fields, however, bulk samples are subject to a relatively large Lorentz force, and their performance is limited primarily by their tensile strength. Consequently, sample reinforcement is the key to performance impr… ▽ More The ability of large grain, REBa$_{2}$Cu$_{3}$O$_{7-δ}$ [(RE)BCO; RE = rare earth] bulk superconductors to trap magnetic field is determined by their critical current. With high trapped fields, however, bulk samples are subject to a relatively large Lorentz force, and their performance is limited primarily by their tensile strength. Consequently, sample reinforcement is the key to performance improvement in these technologically important materials. In this work, we report a trapped field of 17.6 T, the largest reported to date, in a stack of two, silver-doped GdBCO superconducting bulk samples, each of diameter 25 mm, fabricated by top-seeded melt growth (TSMG) and reinforced with shrink-fit stainless steel. This sample preparation technique has the advantage of being relatively straightforward and inexpensive to implement and offers the prospect of easy access to portable, high magnetic fields without any requirement for a sustaining current source. △ Less

Submitted 7 July, 2014; v1 submitted 3 June, 2014; originally announced June 2014.

Comments: Updated submission to reflect licence change to CC-BY. This is the "author accepted manuscript" and is identical in content to the published version

Journal ref: Supercond. Sci. Technol. 27 082001 (2014)

Feedback-controlled electromigration for the fabrication of point contacts

Authors: J. M. Campbell, R. G. Knobel

Abstract: Lithographically fabricated point contacts serve as important examples of mesoscopic conductors, as electrodes for molecular electronics, and as ultra-sensitive transducers for mechanical motion. We have developed a reproducible technique for fabricating metallic point contacts though electromigration. We employ fast analog feedback in a four-wire configuration in combination with slower computer… ▽ More Lithographically fabricated point contacts serve as important examples of mesoscopic conductors, as electrodes for molecular electronics, and as ultra-sensitive transducers for mechanical motion. We have developed a reproducible technique for fabricating metallic point contacts though electromigration. We employ fast analog feedback in a four-wire configuration in combination with slower computer controlled feedback to avoid catastrophic instability. This hybrid system allows electromigration to proceed while dissipating approximately constant power in the wire. We are able to control the final resistance of the point contact precisely below 5 kΩ and to within a factor of three when the target resistance approaches 12 kΩ where only a single conducting channel remains. △ Less

Submitted 4 October, 2012; originally announced October 2012.

A Trapped Field of >3T in Bulk MgB2 Fabricated by Uniaxial Hot Pressing

Authors: J. H. Durrell, C. E. J. Dancer, A. Dennis, Y. Shi, Z. Xu, A. M. Campbell, N. H. Babu, R. I. Todd, C. R. M. Grovenor, D. A. Cardwell

Abstract: A trapped field of over 3 T has been measured at 17.5 K in a magnetised stack of two disc-shaped bulk MgB2 superconductors of diameter 25 mm and thickness 5.4 mm. The bulk MgB2 samples were fabricated by uniaxial hot pressing, which is a readily scalable, industrial technique, to 91% of their maximum theoretical density. The macroscopic critical current density derived from the trapped field data… ▽ More A trapped field of over 3 T has been measured at 17.5 K in a magnetised stack of two disc-shaped bulk MgB2 superconductors of diameter 25 mm and thickness 5.4 mm. The bulk MgB2 samples were fabricated by uniaxial hot pressing, which is a readily scalable, industrial technique, to 91% of their maximum theoretical density. The macroscopic critical current density derived from the trapped field data using the Biot-Savart law is consistent with the measured local critical current density. From this we conclude that critical current density, and therefore trapped field performance, is limited by the flux pinning available in MgB2, rather than by lack of connectivity. This suggests strongly that both increasing sample size and enhancing pinning through doping will allow further increases in trapped field performance of bulk MgB2. △ Less

Submitted 28 September, 2012; v1 submitted 30 July, 2012; originally announced July 2012.

Comments: 10 pages, 4 figures. Accepted as a Rapid Publication in Superconductor Science and Technology (Final version after peer review)

Journal ref: Supercond. Sci. Technol. 25 112002 (2012)

Exchange bias of mu-metal thin films

Authors: H. F. Kirby, T. M. Eggers, P. B. Jayathilaka, S. M. Campbell, Casey W. Miller

Abstract: The exchange bias of the soft ferromagnet mu-metal, Ni77Fe14Cu5Mo4, with the metallic antiferromagnet Fe50Mn50 has been studied as a function of ferromagnet thickness and buffer layer material. Mu-metal exhibits classic exchange bias behavior: the exchange bias (HEB) and coercive fields scale inversely with the ferromagnet's thickness, with HEB varying as the cosine of the in-plane applied field a… ▽ More The exchange bias of the soft ferromagnet mu-metal, Ni77Fe14Cu5Mo4, with the metallic antiferromagnet Fe50Mn50 has been studied as a function of ferromagnet thickness and buffer layer material. Mu-metal exhibits classic exchange bias behavior: the exchange bias (HEB) and coercive fields scale inversely with the ferromagnet's thickness, with HEB varying as the cosine of the in-plane applied field angle. While the exchange bias, coercivity, and exchange energy are greatest when the buffer layer material is (111) oriented Cu, amorphous Ta buffers allow the mu-metal to retain more of its soft magnetic character. The ability to preserve soft ferromagnetic behavior in an exchange biased heterostructure may be useful for low field sensing and other device applications. △ Less

Submitted 7 December, 2011; originally announced December 2011.

Comments: 9 pages, 6 figures

Theory and experiment testing flux-line-cutting physics

Authors: John R. Clem, Marcus Weigand, J. H. Durrell, A. M. Campbell

Abstract: We discuss predictions of five proposed theories for the critical state of type-II superconductors accounting for both flux cutting and flux transport (depinning). The theories predict different behaviours for the ratio $E_y/E_z$ of the transverse and parallel components of the in-plane electric field produced just above the critical current of a type-II superconducting slab as a function of the a… ▽ More We discuss predictions of five proposed theories for the critical state of type-II superconductors accounting for both flux cutting and flux transport (depinning). The theories predict different behaviours for the ratio $E_y/E_z$ of the transverse and parallel components of the in-plane electric field produced just above the critical current of a type-II superconducting slab as a function of the angle of an in-plane applied magnetic field. We present experimental results measured using an epitaxially grown YBCO thin film favoring one of the five theories: the extended elliptic critical-state model. We conclude that when the current density $\bm J$ is neither parallel nor perpendicular to the local magnetic flux density $\bm B$, both flux cutting and flux transport occur simultaneously when $J$ exceeds the critical current density $J_c$, indicating an intimate relationship between flux cutting and depinning. We also conclude that the dynamical properties of the superconductor when $J$ exceeds $J_c$ depend in detail upon two nonlinear effective resistivities for flux cutting ($ρ_c$) and flux flow ($ρ_f$) and their ratio $r= ρ_c/ρ_f$. △ Less

Submitted 7 March, 2011; originally announced March 2011.

Comments: 19 pages, 12 figures, submitted to Supercond. Sci. Technol

Journal ref: Supercond. Sci. Technol. 24 062002 (2011)

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Authors: Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson, Jennifer K. Hite, Yang Yang, Kevin M. Daniels, Rachael L. Myers-Ward, Charles R. Eddy, Jr., Joshua A. Robinson, Kathleen A. Trumbull, Maxwell T. Wetherington, Paul M. Campbell, D. Kurt Gaskill

Abstract: Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of th… ▽ More Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: 12 pages, 4 figures

Journal ref: Appl. Phys. Lett. 96, 222103 (2010)

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Authors: Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson, Glenn G. Jernigan, Karl D. Hobart, Fritz J. Kub, Marko J. Tadjer, Joseph L. Tedesco, Jennifer K. Hite, Michael A. Mastro, Rachael L. Myers-Ward, Charles R. Eddy Jr., Paul M. Campbell, D. Kurt Gaskill

Abstract: In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr… ▽ More In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts. △ Less

Submitted 14 October, 2009; originally announced October 2009.

Comments: 8 pages, 4 figures and supplementary info regarding procedure for transfer

Journal ref: ACS Nano 4(2), 1108-1114 (2010)

Epitaxial Graphene Growth on SiC Wafers

Authors: D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell, Joseph L. Tedesco, James C. Culbertson, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy, Jr., Jeong Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, Joshua A. Robinson, Mark A. Fanton, Joseph P. Stitt, Thomas Stitt, David Snyder, Xiaojun Weng, Eric Frantz

Abstract: An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm Si… ▽ More An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 215th Meeting of the Electrochemical Society, 8 pages, 8 figures

Journal ref: ECS Trans. 19, 117 (2009)

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, James C. Culbertson, Glenn G. Jernigan, Paul M. Campbell, Joseph M. McCrate, Stephen A. Kitt, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free c… ▽ More Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 215th Meeting of the Electrochemical Society (ECS 215), 14 pages, 6 figures

Journal ref: ECS Trans. 19, 137 (2009)

Graphene formation on SiC substrates

Authors: Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R. Eddy, Jr., Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell, Joseph M. McCrate, Stephen A. Kitt, D. Kurt Gaskill

Abstract: Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A… ▽ More Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports. △ Less

Submitted 28 July, 2009; originally announced July 2009.

Comments: European Conference on Silicon Carbide and Related Materials 2008 (ECSCRM '08), 4 pages, 4 figures

Journal ref: Mater. Sci. Forum 615-617, 211 (2009)

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, Joseph M. McCrate, Stephen A. Kitt, Paul M. Campbell, Glenn G. Jernigan, James C. Culbertson, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carr… ▽ More Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: Accepted for publication in Applied Physics Letters, 10 pages, 2 figures

Journal ref: Appl. Phys. Lett 95, 122102 (2009)

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Authors: Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Paul M. Campbell, Xiaojun Weng, Joseph Stitt, Mark A. Fanton, Eric Frantz, David Snyder, Brenda L. VanMil, Glenn G. Jernigan, Rachael L. Myers-Ward, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the devic… ▽ More We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene. △ Less

Submitted 27 February, 2009; originally announced February 2009.

Comments: 13 pages including supplimental material. Submitted to Nature Materials 2/23/2009

Remagnetization of bulk high-temperature superconductors subjected to crossed and rotating magnetic fields

Authors: P Vanderbemden, Z Hong, T A Coombs, M Ausloos, N Hari Babu, D A Cardwell, A M Campbell

Abstract: Bulk melt-processed Y-Ba-Cu-O (YBCO) has significant potential for a variety of high field permanent magnet-like applications, such as the rotor of a brushless motor. When used in rotating devices of this kind, however, the YBCO can be subjected to both transient and alternating magnetic fields that are not parallel to the direction of magnetization and which have a detrimental effect on the tra… ▽ More Bulk melt-processed Y-Ba-Cu-O (YBCO) has significant potential for a variety of high field permanent magnet-like applications, such as the rotor of a brushless motor. When used in rotating devices of this kind, however, the YBCO can be subjected to both transient and alternating magnetic fields that are not parallel to the direction of magnetization and which have a detrimental effect on the trapped field. These effects may lead to a long-term decay of the magnetization of the bulk sample. In the present work, we analyze both experimentally and numerically the remagnetization process of a melt-processed YBCO single domain that has been partially demagnetized by a magnetic field applied orthogonal to the initial direction of trapped flux. Magnetic torque measurements are used as a tool to probe changes in the remanent magnetization during various sequences of applied field. The application of a small magnetic field between the transverse cycles parallel to the direction of original magnetization results in partial remagnetization of the sample. Rotating the applied field, however, is found to be much more efficient at remagnetizing the bulk material than applying a magnetizing field pulse of the same amplitude. The principal features of the experimental data can be reproduced qualitatively using a two-dimensional finite-element numerical model based on an E-J power law. Finally, the remagnetization process is shown to result from the complex modification of current distribution within the cross-section of the bulk sample. △ Less

Submitted 14 March, 2007; originally announced March 2007.

Comments: 23 pages, 9 figures, submitted

Behavior of bulk high-temperature superconductors of finite thickness subjected to crossed magnetic fields

Authors: Ph. Vanderbemden, Z. Hong, T. A. Coombs, S. Denis, M. Ausloos, J. Schwartz, I. B. Rutel, N. Hari Babu, D. A. Cardwell, A. M. Campbell

Abstract: Crossed magnetic field effects on bulk high-temperature superconductors have been studied both experimentally and numerically. The sample geometry investigated involves finite-size effects along both (crossed) magnetic field directions. The experiments were carried out on bulk melt-processed Y-Ba-Cu-O (YBCO) single domains that had been pre-magnetized with the applied field parallel to their sho… ▽ More Crossed magnetic field effects on bulk high-temperature superconductors have been studied both experimentally and numerically. The sample geometry investigated involves finite-size effects along both (crossed) magnetic field directions. The experiments were carried out on bulk melt-processed Y-Ba-Cu-O (YBCO) single domains that had been pre-magnetized with the applied field parallel to their shortest direction (i.e. the c-axis) and then subjected to several cycles of the application of a transverse magnetic field parallel to the sample ab plane. The magnetic properties were measured using orthogonal pick-up coils, a Hall probe placed against the sample surface and Magneto-Optical Imaging (MOI). We show that all principal features of the experimental data can be reproduced qualitatively using a two-dimensional finite-element numerical model based on an E-J power law and in which the current density flows perpendicularly to the plane within which the two components of magnetic field are varied. The results of this study suggest that the suppression of the magnetic moment under the action of a transverse field can be predicted successfully by ignoring the existence of flux-free configurations or flux-cutting effects. These investigations show that the observed decay in magnetization results from the intricate modification of current distribution within the sample cross-section. It is also shown that the model does not predict any saturation of the magnetic induction, even after a large number (~ 100) of transverse field cycles. These features are shown to be consistent with the experimental data. △ Less

Submitted 10 May, 2007; v1 submitted 13 March, 2007; originally announced March 2007.

Comments: 41 pages, 9 figures, accepted in Phys. Rev. B Changes : 8 references added, a few precisions added, some typos corrected

A Gibbsian approach to potential game theory

Authors: Michael J. Campbell

Abstract: In games for which there exists a potential, the deviation-from-rationality dynamical model for which each agent's strategy adjustment follows the gradient of the potential along with a normally distributed random perturbation, is shown to equilibrate to a Gibbs measure. The standard Cournot model of an oligopoly is shown not to have a phase transition, as it is equivalent to a continuum version… ▽ More In games for which there exists a potential, the deviation-from-rationality dynamical model for which each agent's strategy adjustment follows the gradient of the potential along with a normally distributed random perturbation, is shown to equilibrate to a Gibbs measure. The standard Cournot model of an oligopoly is shown not to have a phase transition, as it is equivalent to a continuum version of the Curie-Weiss model. However, when there is increased local competition among agents, a phase transition will likely occur. If the oligopolistic competition has power-law falloff and there is increased local competition among agents, then the model has a rich phase diagram with an antiferromagnetic checkerboard state, striped states and maze-like states with varying widths, and finally a paramagnetic state. Such phases have economic implications as to how agents compete given various restrictions on how goods are distributed. The standard Cournot model corresponds to a uniform distribution of goods, whereas the power-law variations correspond to goods for which the distribution is more localized. △ Less

Submitted 8 February, 2005; v1 submitted 3 February, 2005; originally announced February 2005.

Comments: 27 pages, 1 figure

Thermal Instability and Current-Voltage Scaling in Superconducting Fault Current Limiters

Authors: Bernhard Zeimetz, K Tadinada, D E Eves, T A Coombs, J E Evetts, A M Campbell

Abstract: We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload voltage, with different possible cooling conditions for the surfaces, and locally variable superconducting and thermal properties. We find that the cryogen bo… ▽ More We have developed a computer model for the simulation of resistive superconducting fault current limiters in three dimensions. The program calculates the electromagnetic and thermal response of a superconductor to a time-dependent overload voltage, with different possible cooling conditions for the surfaces, and locally variable superconducting and thermal properties. We find that the cryogen boil-off parameters critically influence the stability of a limiter. The recovery time after a fault increases strongly with thickness. Above a critical thickness, the temperature is unstable even for a small applied AC voltage. The maximum voltage and maximum current during a short fault are correlated by a simple exponential law. △ Less

Submitted 8 December, 2003; originally announced December 2003.

Comments: submitted to Superconductor Science and Technology (Dec 2003)

Journal ref: Supercond. Sci. Technol. 17 (2004) 657-662

Effects of interlayer coupling on the irreversibility lines of NbN/AlN superconducting multilayers

Authors: E. S. Sadki, Z. H. Barber, S. J. Lloyd, M. G. Blamire, A. M. Campbell

Abstract: We have studied the temperature dependence of the in-plane resistivity of NbN/AlN multilayer samples with varying insulating layer thickness in magnetic fields up to 7 Tesla parallel and perpendicular to the films. The upper critical field shows a crossover from 2D to 3D behavior in parallel fields. The irreversibility lines have the form (1-T/Tc)^alpha, where alpha varies from 4/3 to 2 with inc… ▽ More We have studied the temperature dependence of the in-plane resistivity of NbN/AlN multilayer samples with varying insulating layer thickness in magnetic fields up to 7 Tesla parallel and perpendicular to the films. The upper critical field shows a crossover from 2D to 3D behavior in parallel fields. The irreversibility lines have the form (1-T/Tc)^alpha, where alpha varies from 4/3 to 2 with increasing anisotropy. The results are consistent with simultaneous melting and decoupling transitions for low anisotropy sample, and with melting of decoupled pancakes in the superconducting layers for higher anisotropy samples. △ Less

Submitted 24 October, 2000; v1 submitted 27 March, 2000; originally announced March 2000.

Comments: 12 pages, 5 figures, 1 table

Journal ref: Physical Review Letters, volume 85, pages 4168-4171 (2000)