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Blue-to-green single photons from InGaN/GaN dot-in-a-wire nanowire ordered arrays
Authors:
E. Chernysheva,
Z. Gacevic,
N. Garcia-Lepetit,
H. P. van der Meulen,
M. Muller,
F. Bertram,
P. Veit,
A. Torres-Pardo,
J. M. Gonzalez Calbet,
J. Christen,
E. Calleja,
J. M. Calleja,
S. Lazic
Abstract:
Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical…
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Single-photon emitters (SPEs) are at the basis of many applications for quantum information management. Semiconductor-based SPEs are best suited for practical implementations because of high design flexibility, scalability and integration potential in practical devices. Single-photon emission from ordered arrays of InGaN nano-disks embedded in GaN nanowires is reported. Intense and narrow optical emission lines from quantum dot-like recombination centers are observed in the blue-green spectral range. Characterization by electron microscopy, cathodoluminescence and micro-photoluminescence indicate that single photons are emitted from regions of high In concentration in the nano-disks due to alloy composition fluctuations. Single-photon emission is determined by photon correlation measurements showing deep anti-bunching minima in the second-order correlation function. The present results are a promising step towards the realization of on-site/on-demand single-photon sources in the blue-green spectral range operating in the GHz frequency range at high temperatures.
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Submitted 12 June, 2017;
originally announced June 2017.
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Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters
Authors:
Snezana Lazic,
Ekaterina Chernysheva,
Zarko Gacevic,
Noemi Garcia-Lepetit,
Herko P. van der Meulen,
Marcus Muller,
Frank Bertram,
Peter Veit,
Jürgen Christen,
Almudena Torres-Pardo,
José M. González Calbet,
Enrique Calleja,
Jose M. Calleja
Abstract:
The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epi…
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The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.
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Submitted 12 June, 2017;
originally announced June 2017.
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Investigation of III-V Nanowires by Plan-View Transmission Electron Microscopy: InN Case Study
Authors:
E Luna,
J Grandal,
E Gallardo,
J M Calleja,
M A Sánchez-García,
E Calleja,
A Trampert
Abstract:
We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specific…
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We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2-3 nm thick) around the InN NWs. The shell layer is composed of bcc-In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] || InN [0001] and In2O3 <110> || InN <11-20>.
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Submitted 29 September, 2014; v1 submitted 17 December, 2013;
originally announced December 2013.
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Bichromatic dressing of a quantum dot detected by a remote second quantum dot
Authors:
M. Maragkou,
C. Sánchez-Muñoz,
S. Lazić,
E. Chernysheva,
H. P. van der Meulen,
A. González-Tudela,
C. Tejedor,
L. J. Martínez,
I. Prieto,
P. A. Postigo,
J. M. Calleja
Abstract:
We demonstrate an information transfer mechanism between two dissimilar remote InAs/GaAs quantum dots weakly coupled to a common photonic crystal microcavity. Bichromatic excitation in the s-state of one of the dots leads to the formation of dressed states due to the coherent coupling to the laser field, in resonance with the quantum dot. Information on the resulting dressed structure is read out…
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We demonstrate an information transfer mechanism between two dissimilar remote InAs/GaAs quantum dots weakly coupled to a common photonic crystal microcavity. Bichromatic excitation in the s-state of one of the dots leads to the formation of dressed states due to the coherent coupling to the laser field, in resonance with the quantum dot. Information on the resulting dressed structure is read out through the photo-luminescence spectrum of the other quantum dot, as well as the cavity mode. The effect is also observed upon exchange of the excitation and detection quantum dots. This quantum dot inter-talk is interpreted in terms of a cavity-mediated coupling involving acoustic phonons. A master equation for a three level system coherently pumped by the two lasers quantitatively describes the behavior of our system. Our results present an important step towards scalable solid-state quantum networking based on coupled multi-quantum-dot-cavity systems, without the need of using identical quantum emitters.
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Submitted 17 September, 2013;
originally announced September 2013.
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Microcavity-mediated Coupling of Two Distant Semiconductor Qubits
Authors:
E. Gallardo,
L. J. Martinez,
A. K. Nowak,
H. P. van der Meulen,
J. M. Calleja,
C. Tejedor,
I. Prieto,
D. Granados,
A. G. Taboada,
J. M. Garcia,
P. A. Postigo
Abstract:
Long distance (1.4 micron) interaction of two different InAs/GaAs quantum dots in a photonic crystal microcavity is observed. Resonant optical excitation in the p-state of any of the quantum dots, results in an increase of the s-state emission of both quantum dots and the cavity mode. The cavity-mediated coupling can be controlled by varying the excitation intensity. These results represent an e…
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Long distance (1.4 micron) interaction of two different InAs/GaAs quantum dots in a photonic crystal microcavity is observed. Resonant optical excitation in the p-state of any of the quantum dots, results in an increase of the s-state emission of both quantum dots and the cavity mode. The cavity-mediated coupling can be controlled by varying the excitation intensity. These results represent an experimental step towards the realization of quantum logic operations using distant solid state qubits.
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Submitted 8 August, 2009;
originally announced August 2009.
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Piezoelectric exciton-acoustic phonon coupling in single quantum dots
Authors:
D. Sarkar,
H. P. van der Meulen,
J. M. Calleja,
J. M. Meyer,
R. J. Haug,
K. Pierz
Abstract:
Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attribute…
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Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton-acoustic phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers.
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Submitted 14 October, 2008;
originally announced October 2008.
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Carrier and Light Trapping in Graded Quantum Well Laser Structures
Authors:
G. Aichmayr,
M. D. Martin,
H. van der Meulen,
C. Pascual,
L. Vina,
J. M. Calleja,
F. Schafer,
J. P. Reithmaier,
A. Forchel
Abstract:
We investigated the carrier and light trapping in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity impr…
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We investigated the carrier and light trapping in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity improves considerably both carrier and light trapping in the quantum well, and that the trapping efficiency is enhanced by increasing the graded confining potential.
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Submitted 26 April, 2000;
originally announced April 2000.
