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Fast high-fidelity single-qubit gates for flip-flop qubits in silicon
Authors:
Fernando A. Calderon-Vargas,
Edwin Barnes,
Sophia E. Economou
Abstract:
The flip-flop qubit, encoded in the states with antiparallel donor-bound electron and donor nuclear spins in silicon, showcases long coherence times, good controllability, and, in contrast to other donor-spin-based schemes, long-distance coupling. Electron spin control near the interface, however, is likely to shorten the relaxation time by many orders of magnitude, reducing the overall qubit qual…
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The flip-flop qubit, encoded in the states with antiparallel donor-bound electron and donor nuclear spins in silicon, showcases long coherence times, good controllability, and, in contrast to other donor-spin-based schemes, long-distance coupling. Electron spin control near the interface, however, is likely to shorten the relaxation time by many orders of magnitude, reducing the overall qubit quality factor. Here, we theoretically study the multilevel system that is formed by the interacting electron and nuclear spins and derive analytical effective two-level Hamiltonians with and without periodic driving. We then propose an optimal control scheme that produces fast and robust single-qubit gates in the presence of low-frequency noise without relying on parametrically restrictive sweet spots. This scheme increases considerably both the relaxation time and the qubit quality factor.
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Submitted 10 October, 2022; v1 submitted 27 January, 2021;
originally announced January 2021.
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Precise high-fidelity electron-nuclear spin entangling gates in NV centers via hybrid dynamical decoupling sequences
Authors:
Wenzheng Dong,
F. A. Calderon-Vargas,
Sophia E. Economou
Abstract:
Color centers in solids, such as the nitrogen-vacancy center in diamond, offer well-protected and well-controlled localized electron spins that can be employed in various quantum technologies. Moreover, the long coherence time of the surrounding spinful nuclei can enable a robust quantum register controlled through the color center. We design pulse sequence protocols that drive the electron spin t…
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Color centers in solids, such as the nitrogen-vacancy center in diamond, offer well-protected and well-controlled localized electron spins that can be employed in various quantum technologies. Moreover, the long coherence time of the surrounding spinful nuclei can enable a robust quantum register controlled through the color center. We design pulse sequence protocols that drive the electron spin to generate robust entangling gates with these nuclear memory qubits. We find that compared to using Carr-Purcell-Meiboom-Gill (CPMG) alone, Uhrig decoupling sequence and hybrid protocols composed of CPMG and Uhrig sequences improve these entangling gates in terms of fidelity, spin control range, and spin selectivity. We provide analytical expressions for the sequence protocols and also show numerically the efficacy of our method on nitrogen-vacancy centers in diamond. Our results are broadly applicable to color centers weakly coupled to a small number of nuclear spin qubits.
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Submitted 8 August, 2020; v1 submitted 4 February, 2020;
originally announced February 2020.
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Fast noise-resistant control of donor nuclear spin qubits in silicon
Authors:
James Simon,
F. A. Calderon-Vargas,
Edwin Barnes,
Sophia E. Economou
Abstract:
A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates remain outstanding challenges for these systems. Here, following recent proposals for long-distance coupling via dipole-dipole interactions, we present a simple…
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A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates remain outstanding challenges for these systems. Here, following recent proposals for long-distance coupling via dipole-dipole interactions, we present a simple method to implement fast, high-fidelity arbitrary single- and two-qubit gates in the absence of charge noise. Moreover, we provide a method to make the single-qubit gates robust to moderate levels of charge noise to well within an error bound of $10^{-3}$.
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Submitted 20 May, 2020; v1 submitted 27 January, 2020;
originally announced January 2020.
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Microwave-based Arbitrary CPHASE Gates for Transmon Qubits
Authors:
George S. Barron,
F. A. Calderon-Vargas,
Junling Long,
David Pappas,
Sophia E. Economou
Abstract:
Superconducting transmon qubits are of great interest for quantum computing and quantum simulation. A key component of quantum chemistry simulation algorithms is breaking up the evolution into small steps, which naturally leads to the need for non-maximally entangling, arbitrary CPHASE gates. Here we design such microwave-based gates using an analytically solvable approach leading to smooth, simpl…
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Superconducting transmon qubits are of great interest for quantum computing and quantum simulation. A key component of quantum chemistry simulation algorithms is breaking up the evolution into small steps, which naturally leads to the need for non-maximally entangling, arbitrary CPHASE gates. Here we design such microwave-based gates using an analytically solvable approach leading to smooth, simple pulses. We use the local invariants of the evolution operator in $SU(4)$ to develop a method of constructing pulse protocols, which allows for the continuous tuning of the phase. We find CPHASE fidelities of more than $0.999$ and gate times as low as $100\text{ ns}$.
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Submitted 21 August, 2019; v1 submitted 3 March, 2019;
originally announced March 2019.
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Fast high-fidelity entangling gates for spin qubits in Si double quantum dots
Authors:
F. A. Calderon-Vargas,
George S. Barron,
Xiu-Hao Deng,
A. J. Sigillito,
Edwin Barnes,
Sophia E. Economou
Abstract:
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work, we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses…
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Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work, we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate CNOT, CPHASE, and CZ gates with average fidelities greater than 99.99\% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we show that a simple square pulse generates a CNOT gate in less than 27 ns and with a fidelity greater than 99.99\%. Last, we use the same analytical methods to generate two-qubit gates locally equivalent to $\sqrt{\mathrm{CNOT}}$ and $\sqrt{\mathrm{CZ}}$ that are used to implement simple two-piece pulse sequences that produce high-fidelity CNOT and CZ gates in the presence of low-frequency noise.
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Submitted 12 July, 2019; v1 submitted 6 February, 2019;
originally announced February 2019.
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Negative exchange interactions in coupled few-electron quantum dots
Authors:
Kuangyin Deng,
F. A. Calderon-Vargas,
Nicholas J. Mayhall,
Edwin Barnes
Abstract:
It has been experimentally shown that negative exchange interactions can arise in a linear three-dot system when a two-electron double quantum dot is exchange coupled to a larger quantum dot containing on the order of one hundred electrons. The origin of this negative exchange can be traced to the larger quantum dot exhibiting a spin triplet-like rather than singlet-like ground state. Here, we sho…
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It has been experimentally shown that negative exchange interactions can arise in a linear three-dot system when a two-electron double quantum dot is exchange coupled to a larger quantum dot containing on the order of one hundred electrons. The origin of this negative exchange can be traced to the larger quantum dot exhibiting a spin triplet-like rather than singlet-like ground state. Here, we show using a microscopic model based on the configuration interaction (CI) method that both triplet-like and singlet-like ground states are realized depending on the number of electrons. In the case of only four electrons, a full CI calculation reveals that triplet-like ground states occur for sufficiently large dots. These results hold for symmetric and asymmetric quantum dots in both Si and GaAs, showing that negative exchange interactions are robust in few-electron double quantum dots and do not require large numbers of electrons.
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Submitted 4 June, 2018; v1 submitted 15 December, 2017;
originally announced December 2017.
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A robust operating point for capacitively coupled singlet-triplet qubits
Authors:
M. A. Wolfe,
F. A. Calderon-Vargas,
J. P. Kestner
Abstract:
Singlet-triplet qubits in lateral quantum dots in semiconductor heterostructures exhibit high-fidelity single-qubit gates via exchange interactions and magnetic field gradients. High-fidelity two-qubit entangling gates are challenging to generate since weak interqubit interactions result in slow gates that accumulate error in the presence of noise. However, the interqubit electrostatic interaction…
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Singlet-triplet qubits in lateral quantum dots in semiconductor heterostructures exhibit high-fidelity single-qubit gates via exchange interactions and magnetic field gradients. High-fidelity two-qubit entangling gates are challenging to generate since weak interqubit interactions result in slow gates that accumulate error in the presence of noise. However, the interqubit electrostatic interaction also produces a shift in the local double well detunings, effectively changing the dependence of exchange on the gate voltages. We consider an operating point where the effective exchange is first order insensitive to charge fluctuations while maintaining nonzero interactions. This "sweet spot" exists only in the presence of interactions. We show that working at the interacting sweet spot can directly produce maximally entangling gates and we simulate the gate evolution under realistic 1/f noise. We report theoretical two-qubit gate fidelities above 99% in GaAs and Si systems.
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Submitted 30 November, 2017; v1 submitted 26 September, 2017;
originally announced September 2017.
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Entanglement dynamics of two Ising-coupled qubits with nonperpendicular local driving fields
Authors:
F. A. Calderon-Vargas,
J. P. Kestner
Abstract:
We present an approximate analytical solution to the dynamic equation of two Ising-coupled qubits with oscillating classical control fields that are nonperpendicular to the static drift fields. This is a situation that has recently arisen in some solid-state experiments. With our solution we derive the analytical expressions for the local invariants as well as the local rotations needed to isolate…
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We present an approximate analytical solution to the dynamic equation of two Ising-coupled qubits with oscillating classical control fields that are nonperpendicular to the static drift fields. This is a situation that has recently arisen in some solid-state experiments. With our solution we derive the analytical expressions for the local invariants as well as the local rotations needed to isolate a purely nonlocal gate. This determines the set of parameters that are required to generate any entangling gate. Moreover, we use our results to describe a recent experimental work on capacitively coupled singlet-triplet qubits in GaAs and discuss possible differences for a similar device in silicon.
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Submitted 10 April, 2018; v1 submitted 11 September, 2017;
originally announced September 2017.
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Directly accessible entangling gates for capacitively coupled singlet-triplet qubits
Authors:
Fernando A. Calderon-Vargas,
Jason P. Kestner
Abstract:
The recent experimental advances in capacitively coupled singlet-triplet qubits, particularly the demonstration of entanglement, opens the question of what type of entangling gates the system's Hamiltonian can produce directly via a single square pulse. We address this question by considering the system's Hamiltonian from first principles and using the representation of its nonlocal properties in…
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The recent experimental advances in capacitively coupled singlet-triplet qubits, particularly the demonstration of entanglement, opens the question of what type of entangling gates the system's Hamiltonian can produce directly via a single square pulse. We address this question by considering the system's Hamiltonian from first principles and using the representation of its nonlocal properties in terms of local invariants. In the analysis we include the three different ways in which the system can be biased and their effect on the generation of entangling gates. We find that, in one of the possible biasing modes, the Hamiltonian has an especially simple form, which can directly generate a wide range of different entangling gates including the iSWAP gate. Moreover, using the complete form of the Hamiltonian we find that, for any biasing mode, a CNOT gate can be generated directly.
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Submitted 9 January, 2015; v1 submitted 22 September, 2014;
originally announced September 2014.
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Noise-compensating pulses for electrostatically controlled silicon spin qubits
Authors:
Xin Wang,
Fernando A. Calderon-Vargas,
Muhed S. Rana,
Jason P. Kestner,
Edwin Barnes,
Sankar Das Sarma
Abstract:
We study the performance of SUPCODE---a family of dynamically correcting pulses designed to cancel simultaneously both Overhauser and charge noise for singlet-triplet spin qubits---adapted to silicon devices with electrostatic control. We consider both natural Si and isotope-enriched Si systems, and in each case we investigate the behavior of individual gates under static noise and perform randomi…
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We study the performance of SUPCODE---a family of dynamically correcting pulses designed to cancel simultaneously both Overhauser and charge noise for singlet-triplet spin qubits---adapted to silicon devices with electrostatic control. We consider both natural Si and isotope-enriched Si systems, and in each case we investigate the behavior of individual gates under static noise and perform randomized benchmarking to obtain the average gate error under realistic 1/f noise. We find that in most cases SUPCODE pulses offer roughly an order of magnitude reduction in gate error, and especially in the case of isotope-enriched Si, SUPCODE yields gate operations of very high fidelity. We also develop a version of SUPCODE that cancels the charge noise only, "$δJ$-SUPCODE", which is particularly beneficial for isotope-enriched Si devices where charge noise dominates Overhauser noise, offering a level of error reduction comparable to the original SUPCODE while yielding gate times that are 30% to 50% shorter. Our results show that the SUPCODE noise-compensating pulses provide a fast, simple, and effective approach to error suppression, bringing gate errors well below the quantum error correction threshold in principle.
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Submitted 20 October, 2014; v1 submitted 6 July, 2014;
originally announced July 2014.
