Showing 1–50 of 92 results for author: Cai, J

Giant elastoresistance in magic-angle twisted bilayer graphene

Authors: Xuetao Ma, Zhaoyu Liu, Jiaqi Cai, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Jiun-Haw Chu, Matthew Yankowitz

Abstract: Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle (… ▽ More Strongly correlated and topological phases in moiré materials are exquisitely sensitive to lattice geometry at both atomic and superlattice length scales. Twist angle, pressure, and strain directly modify the lattice, and thus act as highly effective tuning parameters. Here we examine electrical transport in twisted bilayer graphene subjected to continuous uniaxial strain. Near the magic angle ($\approx 1.1^{\circ}$), devices exhibit a pronounced elastoresistance that depends on band filling and temperature, with a gauge factor more than two orders of magnitude larger than that of conventional metals. In selected doping regimes the elastoresistance exhibits a Curie-Weiss-like temperature divergence. We discuss possible microscopic origins, including nematic fluctuations and enhanced electronic entropy from fluctuating isospin moments. Our work establishes uniaxial strain as a versatile probe of correlated physics in a moiré material. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Comments: 21 pages, 16 figures

Phase stabilization of In2Se3 by disordered Ni intercalation and its enhanced thermoelectrical performance

Authors: Zengguang Shi, Yukun Xiao, Mian Li, Jianfeng Cai, Yanmei Chen, Jun Jiang, Xiaoping Ouyang, Zhifang Chai, Qing Huang

Abstract: Van der Waals (vdW) layered materials have gained significant attention owing to their distinctive structure and unique properties. The weak interlayer bonding in vdW layered materials enables guest atom intercalation, allowing precise tuning of their physical and chemical properties. In this work, a ternary compound, NixIn2Se3 (x = 0-0.3), with Ni randomly occupying the interlayers of In2Se3, was… ▽ More Van der Waals (vdW) layered materials have gained significant attention owing to their distinctive structure and unique properties. The weak interlayer bonding in vdW layered materials enables guest atom intercalation, allowing precise tuning of their physical and chemical properties. In this work, a ternary compound, NixIn2Se3 (x = 0-0.3), with Ni randomly occupying the interlayers of In2Se3, was synthesized via an intercalation route driven by electron injection. The intercalated Ni atoms act as anchor points within the interlayer of In2Se3, which effectively suppresses the phase transition of In2Se3 at elevated temperatures. Furthermore, the disordered Ni intercalation significantly enhanced the electrical conductivity of In2Se3 through electron injection, while reducing the thermal conductivity due to the interlayer phonon scattering, leading to an improved thermoelectric performance. For instance, the thermoelectric figure of merit (ZT) of Ni0.3In2Se3 increased by 86% (in-plane) and 222% (out-of-plane) compared to In2Se3 at 500 oC. These findings not only provide an effective strategy to enhance the performance of layered thermoelectric materials, but also demonstrate the potential of intercalation chemistry for expanding the application scope of van der Waals (vdW) layered materials. △ Less

Submitted 23 April, 2025; originally announced April 2025.

Optical control of orbital magnetism in magic angle twisted bilayer graphene

Authors: Eylon Persky, Minhao He, Jiaqi Cai, Takashi Taniguchi, Kenji Watanabe, Xiaodong Xu, Aharon Kapitulnik

Abstract: Flat bands in graphene-based moiré structures host a wide range of emerging strongly correlated and topological phenomena. Optically probing and controlling them can reveal important information such as symmetry and dynamics, but have so far been challenging due to the small energy gap compared to optical wavelengths. Here, we report near infrared optical control of orbital magnetism and associate… ▽ More Flat bands in graphene-based moiré structures host a wide range of emerging strongly correlated and topological phenomena. Optically probing and controlling them can reveal important information such as symmetry and dynamics, but have so far been challenging due to the small energy gap compared to optical wavelengths. Here, we report near infrared optical control of orbital magnetism and associated anomalous Hall effects (AHE) in a magic angle twisted bilayer graphene (MATBG) on monolayer WSe$_2$ device. We show that the properties of the AHE, such as hysteresis and amplitude, can be controlled by light near integer moiré fillings, where spontaneous ferromagnetism exists. By modulating the light helicity, we observe periodic modulation of the transverse resistance in a wide range of fillings, indicating light induced orbital magnetization through a large inverse Faraday effect. At the transition between metallic and AHE regimes, we also reveal large and random switching of the Hall resistivity, which are attributed to optical control of percolating cluster of magnetic domains. Our results open the door to optical manipulation of correlation and topology in MATBG and related structures. △ Less

Submitted 27 March, 2025; originally announced March 2025.

Comments: 16 pages, 9 figures

Magnetoelectric Control of Helical Light Emission in a Moiré Chern Magnet

Authors: Eric Anderson, Heonjoon Park, Kaijie Yang, Jiaqi Cai, Takashi Taniguchi, Kenji Watanabe, Liang Fu, Ting Cao, Di Xiao, Xiaodong Xu

Abstract: Magnetoelectric effects and their coupling to light helicity are important for both fundamental science and applications in sensing, communication, and data storage. Traditional approaches require complex device architectures, involving separate spin-injection, ferromagnetic, and optically active layers. Recently, the emergence of 2D semiconductor moiré superlattices with flat Chern bands and stro… ▽ More Magnetoelectric effects and their coupling to light helicity are important for both fundamental science and applications in sensing, communication, and data storage. Traditional approaches require complex device architectures, involving separate spin-injection, ferromagnetic, and optically active layers. Recently, the emergence of 2D semiconductor moiré superlattices with flat Chern bands and strong light-matter interactions has established a simple yet powerful platform for exploring the coupling between photon, electron, and spin degrees of freedom. Here, we report efficient current control of spontaneous ferromagnetism and associated helicity of light emission in moiré MoTe2 bilayer - a system which hosts a rich variety of topological phases, including newly discovered zero-field fractional Chern insulators. We show that the current control is effective over a wide range of doping of the first moiré Chern band, implying the uniformity of the Berry curvature distribution over the flat band. By setting the system into the anomalous Hall metal phase, a current as small as 10nA is sufficient to switch the magnetic order, a substantial improvement over both conventional spin torque architectures and other moiré systems. The realized current control of ferromagnetism leads to continuous tuning of trion photoluminescence helicity from left to right circular via spin/valley Hall torque at zero magnetic field. Our results pave the way for topological opto-spintronics based on semiconductors with synthetic flat Chern bands. △ Less

Submitted 4 March, 2025; originally announced March 2025.

Comments: 16 pages, 4 figures, plus supplementary material

Isotropic superconductivity in pressurized trilayer nickelate La4Ni3O10

Authors: Di Peng, Yaolong Bian, Zhenfang Xing, Lixing Chen, Jiaqiang Cai, Tao Luo, Fujun Lan, Yuxin Liu, Yinghao Zhu, Enkang Zhang, Zhaosheng Wang, Yuping Sun, Yuzhu Wang, Xingya Wang, Chenyue Wang, Yuqi Yang, Yanping Yang, Hongliang Dong, Hongbo Lou, Zhidan Zeng, Zhi Zeng, Mingliang Tian, Jun Zhao, Qiaoshi Zeng, Jinglei Zhang , et al. (1 additional authors not shown)

Abstract: Evidence of superconductivity (SC) has recently been reported in pressurized La3Ni2O7 and La4Ni3O10, providing a new platform to explore high-temperature superconductivity. However, while zero resistance state has been observed, experimental characterization of the superconducting properties of pressurized nickelates is still limited and experimentally challenging. Here, we present the first full… ▽ More Evidence of superconductivity (SC) has recently been reported in pressurized La3Ni2O7 and La4Ni3O10, providing a new platform to explore high-temperature superconductivity. However, while zero resistance state has been observed, experimental characterization of the superconducting properties of pressurized nickelates is still limited and experimentally challenging. Here, we present the first full temperature dependence of the upper critical field Hc2 measurement in La4Ni3O10 single crystal, achieved by combining high magnetic field and high-pressure techniques. Remarkably, the Hc2 of La4Ni3O10 is nearly isotropic, with the anisotropic parameter monotonically increasing from 1.4 near Tc to 1 at lower temperatures. By analyzing the Hc2 using the two-band model, we uncover that the anisotropic diffusivity of the bands, primarily originating from d(z2 ) and d(x2-y2 ) orbitals, is well compensated, resulting in an unusually isotropic superconducting state. These findings provide critical experimental evidence that underscores the significant role of the d(z2 ) orbital in enabling superconductivity in pressurized Ruddlesden-Popper nickelates. △ Less

Submitted 20 February, 2025; originally announced February 2025.

Comments: 20 pages, 9 figures

Two-dimensional superconductivity and anomalous vortex dissipation in newly-discovered transition metal dichalcogenide-based superlattices

Authors: Mengzhu Shi, Kaibao Fan, Houpu Li, Senyang Pan, Jiaqiang Cai, Nan Zhang, Hongyu Li, Tao Wu, Jinglei Zhang, Chuanying Xi, Ziji Xiang, Xianhui Chen

Abstract: Properties of layered superconductors can vary drastically when thinned down from bulk to monolayer, owing to the reduced dimensionality and weakened interlayer coupling. In transition metal dichalcogenides (TMDs), the inherent symmetry breaking effect in atomically thin crystals prompts novel states of matter, such as Ising superconductivity with an extraordinary in-plane upper critical field. He… ▽ More Properties of layered superconductors can vary drastically when thinned down from bulk to monolayer, owing to the reduced dimensionality and weakened interlayer coupling. In transition metal dichalcogenides (TMDs), the inherent symmetry breaking effect in atomically thin crystals prompts novel states of matter, such as Ising superconductivity with an extraordinary in-plane upper critical field. Here, we demonstrate that two-dimensional (2D) superconductivity resembling those in atomic layers but with more fascinating behaviours can be realized in the bulk crystals of two new TMD-based superconductors Ba0.75ClTaS2 and Ba0.75ClTaSe2. They comprise an alternating stack of H-type TMD layers and Ba-Cl layers. In both materials, intrinsic 2D superconductivity develops below a Berezinskii-Kosterlitz-Thouless transition. The upper critical field along ab plane exceeds the Pauli limit (Hp); in particular, Ba0.75ClTaSe2 exhibits an extremely high in plane Hc2 (14Hp) and a colossal superconducting anisotropy of 150. Moreover, the temperature-field phase diagram of Ba0.75ClTaSe2 under an in-plane magnetic field contains a large phase regime of vortex dissipation, which can be ascribed to the Josephson vortex motion, signifying an unprecedentedly strong fluctuation effect in TMD-based superconductors. Our results provide a new path towards the establishment of 2D superconductivity and novel exotic quantum phases in bulk crystals of TMD-based superconductors. △ Less

Submitted 18 November, 2024; originally announced November 2024.

Comments: Accepted by JACS

Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing

Authors: Ruijun Zhang, Mingkun Zhang, Guoliang Zhang, Yujian Chen, Jia Liu, Ziqian Tian, Ye Yu, Peng Zhao, Shaoxiong Wu, Yuning Zhang, Dingqu Lin, Xiaping Chen, Jiafa Cai, Rongdun Hong, Feng Zhang

Abstract: A minority carrier lifetime of 25.46 $μ$s in a P-type 4H-SiC epilayer has been attained through sequential thermal oxidation and hydrogen annealing. Thermal oxidation can enhance the minority carrier lifetime in the 4H-SiC epilayer by reducing carbon vacancies. However, this process also generates carbon clusters with limited diffusivity and contributes to the enlargement of surface pits on the 4H… ▽ More A minority carrier lifetime of 25.46 $μ$s in a P-type 4H-SiC epilayer has been attained through sequential thermal oxidation and hydrogen annealing. Thermal oxidation can enhance the minority carrier lifetime in the 4H-SiC epilayer by reducing carbon vacancies. However, this process also generates carbon clusters with limited diffusivity and contributes to the enlargement of surface pits on the 4H-SiC. High-temperature hydrogen annealing effectively reduces stacking fault and dislocation density. Moreover, electron spin resonance analysis indicates a significant reduction in carbon vacancy defects after hydrogen annealing. The mechanisms of the elimination of carbon vacancies by hydrogen annealing include the decomposition of carbon clusters formed during thermal oxidation and the low-pressure selective etching by hydrogen, which increases the carbon content on the 4H-SiC surface and facilitates carbon diffusion. Consequently, the combination of thermal oxidation and hydrogen annealing eliminates carbon vacancies more effectively, substantially enhancing the minority carrier lifetime in P-type 4H-SiC. This improvement is advantageous for the application of high-voltage SiC bipolar devices. △ Less

Submitted 15 December, 2024; v1 submitted 16 November, 2024; originally announced November 2024.

Theory of vibrational Stark effect for adsorbates and diatomic molecules

Authors: Sang Yang, Jun Cai, Yanxia Chen, Ming Gong

Abstract: Nowadays the vibrational Stark effect (VSE) of adsorbates at the electrochemical interfaces is generally investigated using the Lambert theory, in which the strong electric field across the interfaces can be treated as some kind of perturbation. Lambert found that the VSE arises mainly from the classical effect, and the quantum effect is negligible. This idea is accepted by almost all current firs… ▽ More Nowadays the vibrational Stark effect (VSE) of adsorbates at the electrochemical interfaces is generally investigated using the Lambert theory, in which the strong electric field across the interfaces can be treated as some kind of perturbation. Lambert found that the VSE arises mainly from the classical effect, and the quantum effect is negligible. This idea is accepted by almost all current first-principle calculations for this issue. Here we revisit this problem by addressing the fundamental question that to what extent the quantum effect is important for VSE, and if it is observable, then which physical quantity determines this effect. We use the Morse, Lennard-Jones and Dunham potentials as basic potentials to explore this problem using quantum perturbation theory. We define the relative difference between quantum and classical VSE slopes to define the quantum effect, $η$, and show that for CO, $η\sim $ 2 - 3\%, while for adsorbed hydrogen on Pt electrode, $η\sim$ 8 - 10\%, using the experimental data. We find that $η$ is determined by the anharmonic coefficient $χ_e$. Without results we present a new understanding of the VSE as a function of electric field and potential in electrochemical experiments, showing that the nonlinear slope of VSE as a function of potential should arise from the nonlinear relation between electric field and potential across the interfaces, which may resolve the long-standing controversial in experiments. △ Less

Submitted 29 October, 2024; originally announced October 2024.

Comments: 12 pages and 5 figures

Effect of UV light irradiation on charge neutralization in XPS measurements

Authors: Lei Zhu, Yunguo Yang, Jianhua Cai, Xuefeng Xu, Liran Ma, Jianbin Luo

Abstract: When XPS analyses are performed on insulator surfaces, shift and deformation of spectra peaks typically take place due to the surface charging. To achieve reliable XPS measurements, neutralization techniques have been widely adopted but their effectiveness are still limited, and thus, new neutralization technologies are urgently needed. Here, stable XPS spectra in which all the peaks undergo a red… ▽ More When XPS analyses are performed on insulator surfaces, shift and deformation of spectra peaks typically take place due to the surface charging. To achieve reliable XPS measurements, neutralization techniques have been widely adopted but their effectiveness are still limited, and thus, new neutralization technologies are urgently needed. Here, stable XPS spectra in which all the peaks undergo a reduced and nearly constant shift without significant deformation and broadening were obtained by introducing the UV light irradiation, implying that the introduction of the UV light can not only greatly attenuate the strength but also significantly improve both the temporal stability and the spatial uniformity of the surface charging during XPS measurements. This phenomenon, referred to as UV-assisted neutralization in this article, was found as effective as the most commonly used dual beam charge neutralization. Further observations show that the suppression of the charging issue comes from the adsorption of the UV-excited photoelectrons onto the X-ray irradiation region. This neutralization method, combined with the binding energy referencing, can be expected to become a promising alternative technique for solving the charging issues in XPS measurements. △ Less

Submitted 25 September, 2024; v1 submitted 1 September, 2024; originally announced September 2024.

Strongly interacting Hofstadter states in magic-angle twisted bilayer graphene

Authors: Minhao He, Xiaoyu Wang, Jiaqi Cai, Jonah Herzog-Arbeitman, Takashi Taniguchi, Kenji Watanabe, Ady Stern, B. Andrei Bernevig, Matthew Yankowitz, Oskar Vafek, Xiaodong Xu

Abstract: Magic-angle twisted bilayer graphene (MATBG) hosts a multitude of strongly correlated states at partial fillings of its flat bands. In a magnetic field, these flat bands further evolve into a unique Hofstadter spectrum renormalized by strong Coulomb interactions. Here, we study the interacting Hofstadter states spontaneously formed within the topological magnetic subbands of an ultraclean MATBG de… ▽ More Magic-angle twisted bilayer graphene (MATBG) hosts a multitude of strongly correlated states at partial fillings of its flat bands. In a magnetic field, these flat bands further evolve into a unique Hofstadter spectrum renormalized by strong Coulomb interactions. Here, we study the interacting Hofstadter states spontaneously formed within the topological magnetic subbands of an ultraclean MATBG device, notably including symmetry-broken Chern insulator (SBCI) states and fractional quantum Hall (FQH) states. The observed SBCI states form a cascade with their Chern numbers mimicking the main sequence correlated Chern insulators. The FQH states in MATBG form in Jain sequence; however, they disappear at high magnetic field, distinct from conventional FQH states which strengthen with increasing magnetic field. We reveal a unique magnetic field-driven phase transition from composite fermion phases to a dissipative Fermi liquid. Our theoretical analysis of the magnetic subbands hosting FQH states predicts non uniform quantum geometric properties far from the lowest Landau level. This points towards a more natural interpretation of these FQH states as in-field fractional Chern insulators of the magnetic subbands. △ Less

Submitted 2 August, 2024; originally announced August 2024.

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Xiao-Wei Zhang, Xiaoyu Liu, William Holtzmann, Weijie Li, Chong Wang, Chaowei Hu, Yuzhou Zhao, Takashi Taniguchi, Kenji Watanabe, Jihui Yang, David Cobden, Jiun-Haw Chu, Nicolas Regnault, B. Andrei Bernevig, Liang Fu, Ting Cao, Di Xiao, Xiaodong Xu

Abstract: The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to engineer higher flat Chern bands that mimic higher Landau levels. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband i… ▽ More The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators provides an opportunity to investigate zero magnetic field anyons. To potentially realize non-Abelian anyons, one approach is to engineer higher flat Chern bands that mimic higher Landau levels. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayers. At half filling of the second miniband, we observe spontaneous ferromagnetism and an incipient Chern insulator state. The Chern numbers of the top two moiré flat bands exhibit opposite signs for twist angles above 3.1°, but share the same sign near 2.6°, consistent with theoretical predictions. In the 2.6° device, increasing magnetic field induces a topological phase transition via band crossing between opposite valleys, resulting in an emergent state with Chern number C = -2. Additionally, an insulating state at half filling of the second valley-polarized band suggests a charge-ordered state is favored over the fractional Chern insulator state. These findings lay a foundation for understanding the higher flat Chern bands, crucial for the discovery of non-Abelian fractional Chern insulators. △ Less

Submitted 16 December, 2024; v1 submitted 13 June, 2024; originally announced June 2024.

Comments: 26 pages, 4 figures, updated version

Visualizing the microscopic origins of topology in twisted molybdenum ditelluride

Authors: Ellis Thompson, Keng Tou Chu, Florie Mesple, Xiao-Wei Zhang, Chaowei Hu, Yuzhou Zhao, Heonjoon Park, Jiaqi Cai, Eric Anderson, Kenji Watanabe, Takashi Taniguchi, Jihui Yang, Jiun-Haw Chu, Xiaodong Xu, Ting Cao, Di Xiao, Matthew Yankowitz

Abstract: In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wav… ▽ More In moiré materials with flat electronic bands and suitable quantum geometry, strong correlations can give rise to novel topological states of matter. The nontrivial band topology of twisted molybdenum ditelluride (tMoTe$_2$) -- responsible for its fractional quantum anomalous Hall (FQAH) states -- is predicted to arise from a layer-pseudospin skyrmion lattice. Tracing the layer polarization of wavefunctions within the moiré unit cell can thus offer crucial insights into the band topology. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to probe the layer-pseudospin skyrmion textures of tMoTe$_2$. We do this by simultaneously visualizing the moiré lattice structure and the spatial localization of its electronic states. We find that the wavefunctions associated with the topological flat bands exhibit a spatially-dependent layer polarization within the moiré unit cell. This is in excellent agreement with our theoretical modeling, thereby revealing a direct microscopic connection between the structural properties of tMoTe$_2$ and its band topology. Our work enables new pathways for engineering FQAH states with strain, as well as future STM studies of the intertwined correlated and topological states arising in gate-tunable devices. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Comments: 7 pages, 4 figures, Extended Data, 9 figures, Supplementary Information, 8 pages, 5 figures

Direct magnetic imaging of fractional Chern insulators in twisted MoTe$_2$ with a superconducting sensor

Authors: Evgeny Redekop, Canxun Zhang, Heonjoon Park, Jiaqi Cai, Eric Anderson, Owen Sheekey, Trevor Arp, Grigory Babikyan, Samuel Salters, Kenji Watanabe, Takashi Taniguchi, Xiaodong Xu, Andrea F. Young

Abstract: In the absence of time reversal symmetry, orbital magnetization provides a sensitive probe of topology and interactions, with particularly rich phenomenology in Chern insulators where topological edge states carry large equilibrium currents. Here, we use a nanoscale superconducting sensor to map the magnetic fringe fields in twisted bilayers of MoTe$_2$, where transport and optical sensing experim… ▽ More In the absence of time reversal symmetry, orbital magnetization provides a sensitive probe of topology and interactions, with particularly rich phenomenology in Chern insulators where topological edge states carry large equilibrium currents. Here, we use a nanoscale superconducting sensor to map the magnetic fringe fields in twisted bilayers of MoTe$_2$, where transport and optical sensing experiments have revealed the formation of fractional Chern insulator (FCI) states at zero magnetic field. At a temperature of 1.6K, we observe oscillations in the local magnetic field associated with fillings $ν=-1,-2/3,-3/5,-4/7$ and $-5/9$ of the first moiré hole band, consistent with the formation of FCIs at these fillings. By quantitatively reconstructing the magnetization, we determine the local thermodynamic gaps of the most robust FCI state at $ν=-2/3$, finding $^{-2/3}Δ$ as large as 7 meV. Spatial mapping of the charge density- and displacement field-tuned magnetic phase diagram further allows us to characterize sample disorder, which we find to be dominated by both inhomogeneity in the effective unit cell area as well as inhomogeneity in the band edge offset and bound dipole moment. Our results highlight both the challenges posed by structural disorder in the study of twisted homobilayer moiré systems and the opportunities afforded by the remarkably robust nature of the underlying correlated topological states. △ Less

Submitted 16 May, 2024; originally announced May 2024.

Single-Spin Waved-Brim Flat-Top Hat in the Band Edge of GdIH Monolayer

Authors: Ningning Jia, Zhao Yang, Jiangtao Cai, Zhiheng Lv, Yongting Shi, Tielei Song, Xin Cui, Zhifeng Liu

Abstract: Exotic electronic bands, such as flat bands, linear crossing bands, spontaneously valley- or spin-polarized bands, in two-dimensional materials have been the hot topics in condensed matter physics. Herein, we first propose a general dispersion model for possible hat-like electronic bands, and then identify an intriguing single-spin \emph{waved-brim flat-top hat} in the valence band edge of a stabl… ▽ More Exotic electronic bands, such as flat bands, linear crossing bands, spontaneously valley- or spin-polarized bands, in two-dimensional materials have been the hot topics in condensed matter physics. Herein, we first propose a general dispersion model for possible hat-like electronic bands, and then identify an intriguing single-spin \emph{waved-brim flat-top hat} in the valence band edge of a stable ferromagnetic semiconducting electrene (i.e., Janus GdIH monolayer), which can be well described by a simplified two-bands Hamiltonian model. Specifically, the hat-band has a waved brim with six valleys along the boundary of the first Brillouin zone; meanwhile it holds a flat top close to the Fermi level, resulting in the emergence of single-spin van Hove singularities divergence and Lifshitz transitions. Owing to the breaking of both time-reversal and space inversion symmetries, a sizable spontaneous valley polarization is formed between the adjacent brim valleys, which provides the opportunity to realize the high-temperature anomalous valley Hall effect. Particularly, via modest strains and carriers doping, various conductive bipolar-states (spin-up vs. spin-down, K valley vs. $-$K valley, and ultra-low-speed vs. ultra-high-speed) can be modulated out from the distorted waved-brim flat-top hat of GdIH ML. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Magnetism measurements of two-dimensional van der Waals antiferromagnet CrPS4 using dynamic cantilever magnetometry

Authors: Qi Li, Weili Zhen, Ning Wang, Meng Shi, Yang Yu, Senyang Pan, Lin Deng, Jiaqiang Cai, Kang Wang, Lvkuan Zou, Zhongming Zeng, Jinglei Zhang

Abstract: Recent experimental and theoretical work has focused on two-dimensional van der Waals (2D vdW) magnets due to their potential applications in sensing and spintronics devises. In measurements of these emerging materials, conventional magnetometry often encounters challenges in characterizing the magnetic properties of small-sized vdW materials, especially for antiferromagnets with nearly compensate… ▽ More Recent experimental and theoretical work has focused on two-dimensional van der Waals (2D vdW) magnets due to their potential applications in sensing and spintronics devises. In measurements of these emerging materials, conventional magnetometry often encounters challenges in characterizing the magnetic properties of small-sized vdW materials, especially for antiferromagnets with nearly compensated magnetic moments. Here, we investigate the magnetism of 2D antiferromagnet CrPS4 with a thickness of 8nm by using dynamic cantilever magnetometry (DCM). Through a combination of DCM experiment and the calculation based on a Stoner--Wohlfarth-type model, we unravel the magnetization states in 2D CrPS4 antiferromagnet. In the case of H parallel with c, a two-stage phase transition is observed. For H perpendicular to c, a hump in the effective magnetic restoring force is noted, which implies the presence of spin reorientation as temperature increases. These results demonstrate the benefits of DCM for studying magnetism of 2D magnets. △ Less

Submitted 12 October, 2024; v1 submitted 12 April, 2024; originally announced April 2024.

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Authors: Zhaoyu Liu, Xuetao Ma, John Cenker, Jiaqi Cai, Zaiyao Fei, Paul Malinowski, Joshua Mutch, Yuzhou Zhao, Kyle Hwangbo, Zhong Lin, Arnab Manna, Jihui Yang, David Cobden, Xiaodong Xu, Matthew Yankowitz, Jiun-Haw Chu

Abstract: Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optic… ▽ More Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques. △ Less

Submitted 23 May, 2024; v1 submitted 1 April, 2024; originally announced April 2024.

Comments: 9 pages, 6 figures, to appear in Journal of Applied Physics

Journal ref: J. Appl. Phys. 135, 204306 (2024)

Imaginary-time relaxation quantum critical dynamics in two-dimensional dimerized Heisenberg model

Authors: Jia-Qi Cai, Yu-Rong Shu, Xue-Qing Rao, Shuai Yin

Abstract: We study the imaginary-time relaxation critical dynamics of the Neel-paramagnetic quantum phase transition in the two-dimensional (2D) dimerized S = 1/2 Heisenberg model. We focus on the scaling correction in the short-time region. A unified scaling form including both short-time and finite-size corrections is proposed. According to this full scaling form, improved short-imaginary-time scaling rel… ▽ More We study the imaginary-time relaxation critical dynamics of the Neel-paramagnetic quantum phase transition in the two-dimensional (2D) dimerized S = 1/2 Heisenberg model. We focus on the scaling correction in the short-time region. A unified scaling form including both short-time and finite-size corrections is proposed. According to this full scaling form, improved short-imaginary-time scaling relations are obtained. We numerically verify the scaling form and the improved short-time scaling relations for different initial states using projector quantum Monte Carlo algorithm. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 109, 184303(2024)

Intrinsic supercurrent diode effect in NbSe2 nanobridge

Authors: Yiwen Zhang, Jiliang Cai, Peng Dong, Jiadian He, Yifan Ding, Jinghui Wang, Xiang Zhou, Kecheng Cao, Yueshen Wu, Jun Li

Abstract: The significance of the superconducting diode effect lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low temperatures have posed challenges for the conventional semiconductor diode, primarily due to its exceptionally high resistivity. In response to this limitation, various… ▽ More The significance of the superconducting diode effect lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low temperatures have posed challenges for the conventional semiconductor diode, primarily due to its exceptionally high resistivity. In response to this limitation, various approaches have emerged to achieve the superconducting diode effect, primarily involving the disruption of inversion symmetry in a two-dimensional superconductor through heterostructure fabrication. In this study, we present a direct observation of the supercurrent diode effect in a NbSe2 nanobridge with a length of approximately 15 nm, created using focused helium ion beam fabrication. Nonreciprocal supercurrents were identified, reaching a peak value of approximately 380 $μ$A for each bias polarity at $B_{z}^{max} =\pm 0.2$ mT. Notably, the nonreciprocal supercurrent can be toggled by altering the bias polarity. This discovery of the superconducting diode effect introduces a novel avenue and mechanism through nanofabrication on a superconducting flake, offering fresh perspectives for the development of superconducting devices and potential circuits. △ Less

Submitted 25 February, 2024; originally announced February 2024.

Effects of Strong Capacitive Coupling Between Meta-Atoms in rf SQUID Metamaterials

Authors: Jingnan Cai, Robin Cantor, Johanne Hizanidis, Nikos Lazarides, Steven M. Anlage

Abstract: We consider, for the first time, the effects of strong capacitive and inductive coupling between radio frequency Superconducting Quantum Interference Devices (rf SQUIDs) in an overlapping metamaterial geometry when driven by rf flux at and near their self-resonant frequencies. The equations of motion for the gauge-invariant phases on the Josephson junctions in each SQUID are set up and solved. Our… ▽ More We consider, for the first time, the effects of strong capacitive and inductive coupling between radio frequency Superconducting Quantum Interference Devices (rf SQUIDs) in an overlapping metamaterial geometry when driven by rf flux at and near their self-resonant frequencies. The equations of motion for the gauge-invariant phases on the Josephson junctions in each SQUID are set up and solved. Our model accounts for the high-frequency displacement currents through capacitive overlap between the wiring of SQUID loops. We begin by modeling two overlapping SQUIDs and studying the response in both the linear and nonlinear high-frequency driving limits. By exploring a sequence of more and more complicated arrays, the formalism is eventually extended to the $N\times N \times 2$ overlapping metamaterial array, where we develop an understanding of the many ($8N^2-8N+3$) resulting resonant modes in terms of three classes of resonances. The capacitive coupling gives rise to qualitatively new self-resonant responses of rf SQUID metamaterials, and is demonstrated through analytical theory, numerical modeling, and experiment in the 10-30 GHz range on capacitively and inductively coupled rf SQUID metamaterials. △ Less

Submitted 31 May, 2024; v1 submitted 10 February, 2024; originally announced February 2024.

Journal ref: Supercond. Sci. Technol. 37 075023 (2024)

Absence of Weyl nodes in EuCd$_2$As$_2$ revealed by the carrier density dependence of the anomalous Hall effect

Authors: Yue Shi, Zhaoyu Liu, Logan A. Burnett, Seokhyeong Lee, Chaowei Hu, Qianni Jiang, Jiaqi Cai, Xiaodong Xu, Mo Li, Cheng-Chien Chen, Jiun-Haw Chu

Abstract: The antiferromagnetic layered compound EuCd$_2$As$_2$ is widely considered as a leading candidate of ideal Weyl semimetal, featuring a single pair of Weyl nodes in its field-induced ferromagnetic (FM) state. Nevertheless, this view has recently been challenged by an optical spectroscopy study, which suggests that it is a magnetic semiconductor. In this study, we have successfully synthesized highl… ▽ More The antiferromagnetic layered compound EuCd$_2$As$_2$ is widely considered as a leading candidate of ideal Weyl semimetal, featuring a single pair of Weyl nodes in its field-induced ferromagnetic (FM) state. Nevertheless, this view has recently been challenged by an optical spectroscopy study, which suggests that it is a magnetic semiconductor. In this study, we have successfully synthesized highly insulating EuCd$_2$As$_2$ crystals with carrier density reaching as low as $2\times 10^{15}$ $\text{cm}^{-3}$. The magneto-transport measurements revealed a progressive decrease of the anomalous Hall conductivity (AHC) by several orders of magnitude as the carrier density decreases. This behavior contradicts with what is expected from the intrinsic AHC generated by the Weyl points, which is independent of carrier density as the Fermi level approaches the charge neutrality point. In contrast, the scaling relationship between AHC and longitudinal conductivity aligns with the characteristics of variable range hopping insulators. Our results suggest that EuCd$_2$As$_2$ is a magnetic semiconductor rather than a topological Weyl semimetal. △ Less

Submitted 27 February, 2024; v1 submitted 29 December, 2023; originally announced January 2024.

Interface-Induced Superconductivity in Magnetic Topological Insulator-Iron Chalcogenide Heterostructures

Authors: Hemian Yi, Yi-Fan Zhao, Ying-Ting Chan, Jiaqi Cai, Ruobing Mei, Xianxin Wu, Zi-Jie Yan, Ling-Jie Zhou, Ruoxi Zhang, Zihao Wang, Stephen Paolini, Run Xiao, Ke Wang, Anthony R. Richardella, John Singleton, Laurel E. Winter, Thomas Prokscha, Zaher Salman, Andreas Suter, Purnima P. Balakrishnan, Alexander J. Grutter, Moses H. W. Chan, Nitin Samarth, Xiaodong Xu, Weida Wu , et al. (2 additional authors not shown)

Abstract: When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferr… ▽ More When two different electronic materials are brought together, the resultant interface often shows unexpected quantum phenomena, including interfacial superconductivity and Fu-Kane topological superconductivity (TSC). Here, we use molecular beam epitaxy (MBE) to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We discover emergent interface-induced superconductivity in these heterostructures and demonstrate the trifecta occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer, the three essential ingredients of chiral TSC. The unusual coexistence of ferromagnetism and superconductivity can be attributed to the high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. The magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics, constituting an important step toward scalable topological quantum computation. △ Less

Submitted 7 December, 2023; originally announced December 2023.

Comments: 14 pages, 4 figures. Accepted by Science. Comments are welcome

Constructing the Fulde-Ferrell-Larkin-Ovchinnikov state in antiferromagnetic insulator CrOCl

Authors: Yifan Ding, Jiadian He, Shihao Zhang, Huakun Zuo, Pingfan Gu, Jiliang Cai, Xiaohui Zeng, Pu Yan, Kecheng Cao, Kenji Watanabe, Takashi Taniguchi, Peng Dong, Yiwen Zhang, Yueshen Wu, Xiang Zhou, Jinghui Wang, Yulin Chen, Yu Ye, Jianpeng Liu, Jun Li

Abstract: Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, w… ▽ More Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, we report the observation of superconductivity in a few-layer antiferromagnetic insulator CrOCl by utilizing superconducting proximity effect with NbSe2 flakes. The superconductivity demonstrates a considerably weak gap of about 0.12 meV and the in-plane upper critical field reveals as behavior of the FFLO state at low temperature. Our first-principles calculations indicate that the proximitized superconductivity may exist in the CrOCl layer with Cr vacancies or line-defects. Moreover, the FFLO state could be induced by the inherent larger spin splitting in the CrOCl layer. Our findings not only demonstrate the fascinating interaction between superconductivity and magnetism, but also provide a possible path to construct FFLO state by intrinsic time reversal symmetry breaking and superconducting proximity effect. △ Less

Submitted 31 October, 2023; originally announced November 2023.

Gate-controlled suppression of light-driven proton transport through graphene electrodes

Authors: S. Huang, E. Griffin, J. Cai, B. Xin, J. Tong, Y. Fu, V. Kravets, F. M. Peeters, M. Lozada-Hidalgo

Abstract: Recent experiments demonstrated that proton transport through graphene electrodes can be accelerated by over an order of magnitude with low intensity illumination. Here we show that this photo-effect can be suppressed for a tuneable fraction of the infrared spectrum by applying a voltage bias. Using photocurrent measurements and Raman spectroscopy, we show that such fraction can be selected by tun… ▽ More Recent experiments demonstrated that proton transport through graphene electrodes can be accelerated by over an order of magnitude with low intensity illumination. Here we show that this photo-effect can be suppressed for a tuneable fraction of the infrared spectrum by applying a voltage bias. Using photocurrent measurements and Raman spectroscopy, we show that such fraction can be selected by tuning the Fermi energy of electrons in graphene with a bias, a phenomenon controlled by Pauli blocking of photo-excited electrons. These findings demonstrate a dependence between graphene's electronic and proton transport properties and provide fundamental insights into molecularly thin electrode-electrolyte interfaces and their interaction with light. △ Less

Submitted 12 October, 2023; originally announced October 2023.

Report number: 6932

Journal ref: Nature Communications (2023)

Giant orbit-to-charge conversion induced via the inverse orbital Hall effect

Authors: Renyou Xu, Hui Zhang, Yuhao Jiang, Houyi Cheng, Yunfei Xie, Yuxuan Yao, Danrong Xiong, Zhaozhao Zhu, Xiaobai Ning, Runze Chen, Yan Huang, Shijie Xu, Jianwang Cai, Yong Xu, Tao Liu, Weisheng Zhao

Abstract: We investigate the orbit-to-charge conversion in YIG/Pt/nonmagnetic material (NM) trilayer heterostructures. With the additional Ru layer on the top of YIG/Pt stacks, the charge current signal increases nearly an order of magnitude in both longitudinal spin Seebeck effect (SSE) and spin pumping (SP) measurements. Through thickness dependence studies of the Ru metal layer and theoretical model, we… ▽ More We investigate the orbit-to-charge conversion in YIG/Pt/nonmagnetic material (NM) trilayer heterostructures. With the additional Ru layer on the top of YIG/Pt stacks, the charge current signal increases nearly an order of magnitude in both longitudinal spin Seebeck effect (SSE) and spin pumping (SP) measurements. Through thickness dependence studies of the Ru metal layer and theoretical model, we quantitatively clarify different contributions of the increased SSE signal that mainly comes from the inverse orbital Hall effect (IOHE) of Ru, and partially comes from the orbital sink effect in the Ru layer. A similar enhancement of SSE(SP) signals is also observed when Ru is replaced by other materials (Ta, W, and Cu), implying the universality of the IOHE in transition metals. Our findings not only suggest a more efficient generation of the charge current via the orbital angular moment channel but also provides crucial insights into the interplay among charge, spin, and orbit. △ Less

Submitted 24 August, 2023; originally announced August 2023.

Observation of Fractionally Quantized Anomalous Hall Effect

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Yinong Zhang, Jiayi Zhu, Xiaoyu Liu, Chong Wang, William Holtzmann, Chaowei Hu, Zhaoyu Liu, Takashi Taniguchi, Kenji Watanabe, Jiun-haw Chu, Ting Cao, Liang Fu, Wang Yao, Cui-Zu Chang, David Cobden, Di Xiao, Xiaodong Xu

Abstract: The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anoma… ▽ More The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anomalous Hall (FQAH) effect, would open a new chapter in condensed matter physics. Here, we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe$_2$. At zero magnetic field, near filling factor $ν= -1$ (one hole per moiré unit cell) we see an extended integer QAH plateau in the Hall resistance $R_\text{xy}$ that is quantized to $h/e^2 \pm 0.1 \%$ while the longitudinal resistance $R_\text{xx}$ vanishes. Remarkably, at $ν=-2/3$ and $-3/5$ we see plateau features in $R_\text{xy}$ at $3h/2e^2 \pm 1\%$ and $5h/3e^2 \pm 3\%$, respectively, while $R_\text{xx}$ remains small. All these features shift linearly in an applied magnetic field with slopes matching the corresponding Chern numbers $-1$, $-2/3$, and $-3/5$, precisely as expected for integer and fractional QAH states. In addition, at zero magnetic field, $R_\text{xy}$ is approximately $2h/e^2$ near half filling ($ν= -1/2$) and varies linearly as $ν$ is tuned. This behavior resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field. Direct observation of the FQAH and associated effects paves the way for researching charge fractionalization and anyonic statistics at zero magnetic field. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: 15 pages, 4 figures for main text. 8 extended data figures

Journal ref: Nature (2023)

Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer

Authors: Jiaqi Cai, Eric Anderson, Chong Wang, Xiaowei Zhang, Xiaoyu Liu, William Holtzmann, Yinong Zhang, Fengren Fan, Takashi Taniguchi, Kenji Watanabe, Ying Ran, Ting Cao, Liang Fu, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field thanks to its intrinsic ferromagnetism. In the presence of strong electron-electron interactions, exotic fractional-QAH (FQAH) states at zero magnetic fiel… ▽ More The interplay between spontaneous symmetry breaking and topology can result in exotic quantum states of matter. A celebrated example is the quantum anomalous Hall (QAH) state, which exhibits an integer quantum Hall effect at zero magnetic field thanks to its intrinsic ferromagnetism. In the presence of strong electron-electron interactions, exotic fractional-QAH (FQAH) states at zero magnetic field can emerge. These states could host fractional excitations, including non-Abelian anyons - crucial building blocks for topological quantum computation. Flat Chern bands are widely considered as a desirable venue to realize the FQAH state. For this purpose, twisted transition metal dichalcogenide homobilayers in rhombohedral stacking have recently been predicted to be a promising material platform. Here, we report experimental signatures of FQAH states in 3.7-degree twisted MoTe2 bilayer. Magnetic circular dichroism measurements reveal robust ferromagnetic states at fractionally hole filled moiré minibands. Using trion photoluminescence as a sensor, we obtain a Landau fan diagram which shows linear shifts in carrier densities corresponding to the v=-2/3 and -3/5 ferromagnetic states with applied magnetic field. These shifts match the Streda formula dispersion of FQAH states with fractionally quantized Hall conductance of -2/3$e^2/h$ and -3/5$e^2/h$, respectively. Moreover, the v=-1 state exhibits a dispersion corresponding to Chern number -1, consistent with the predicted QAH state. In comparison, several non-ferromagnetic states on the electron doping side do not disperse, i.e., are trivial correlated insulators. The observed topological states can be further electrically driven into topologically trivial states. Our findings provide clear evidence of the long-sought FQAH states, putting forward MoTe2 moiré superlattices as a fascinating platform for exploring fractional excitations. △ Less

Submitted 18 April, 2023; v1 submitted 17 April, 2023; originally announced April 2023.

Comments: 15 pages, 4 figures, v2: extended data (6 figures) is added. Comments are welcome

Journal ref: Nature (2023)

Programming Correlated Magnetic States via Gate Controlled Moiré Geometry

Authors: Eric Anderson, Feng-Ren Fan, Jiaqi Cai, William Holtzmann, Takashi Taniguchi, Kenji Watanabe, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: Understanding quantum many-body systems is at the heart of condensed matter physics. The ability to control the underlying lattice geometry of a system, and thus its many-body interactions, would enable the realization of and transition between emergent quantum ground states. Here, we report in-situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamilto… ▽ More Understanding quantum many-body systems is at the heart of condensed matter physics. The ability to control the underlying lattice geometry of a system, and thus its many-body interactions, would enable the realization of and transition between emergent quantum ground states. Here, we report in-situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamiltonian in R-stacked MoTe2 moiré bilayers, resulting in switchable magnetic exchange interactions. At zero electric field, we observe a correlated ferromagnetic insulator near one hole per moiré unit cell (ν=-1), i.e., a quarter-filled honeycomb lattice, with a widely tunable Curie temperature up to 14K. Fully polarizing layer pseudospin via electric field switches the system into a half-filled triangular lattice with antiferromagnetic interactions. Further doping this layer-polarized superlattice introduces carriers into the empty layer, tuning the antiferromagnetic exchange interaction back to ferromagnetic. Our work demonstrates R-stacked MoTe2 moirés to be a new laboratory for engineering correlated states with nontrivial topology. △ Less

Submitted 29 March, 2023; originally announced March 2023.

Comments: 13 pages, 4 figures, plus supplementary material

Dynamically tunable moiré Rydberg excitons in a monolayer semiconductor on twisted bilayer graphene

Authors: Minhao He, Jiaqi Cai, Huiyuan Zheng, Eric Seewald, Takashi Taniguchi, Kenji Watanabe, Jiaqiang Yan, Matthew Yankowitz, Abhay Pasupathy, Wang Yao, Xiaodong Xu

Abstract: Moiré excitons are emergent optical excitations in 2D semiconductors with deep moiré superlattice potentials. While these excitations have been realized in several platforms, a system with dynamically tunable moiré potential to tailor the moiré exciton properties is yet to be realized. Here, we present a continuously tunable moiré potential in a monolayer WSe2 that is enabled by its proximity to t… ▽ More Moiré excitons are emergent optical excitations in 2D semiconductors with deep moiré superlattice potentials. While these excitations have been realized in several platforms, a system with dynamically tunable moiré potential to tailor the moiré exciton properties is yet to be realized. Here, we present a continuously tunable moiré potential in a monolayer WSe2 that is enabled by its proximity to twisted bilayer graphene (TBG) near the magic-angle. Due to its flat electronic bands, charge distribution is highly localized and forms a triangular lattice in TBG. Tuning the local charge density via electrostatic gating, TBG thus provides a spatially varying and dynamically tunable dielectric superlattice for modulating monolayer exciton wavefunctions. By performing optical reflection spectroscopy, we observe emergent moiré exciton Rydberg branches in monolayer WSe2 with increased energy splitting upon doping TBG. The twist-angle dependence reveals that the observation is due to a hybridization between bright and dark Rydberg states enabled by the moiré potential. Further, at the magic-angle near 1.1°, the moiré Rydberg excitons form a sawtooth pattern with doping owing to the formation of strongly correlated states in the TBG. Our study provides a new platform for engineering moiré excitons as well as optical accessibility to the electronic states with small correlation gaps in TBG. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Strain-programmable van der Waals magnetic tunnel junctions

Authors: John Cenker, Dmitry Ovchinnikov, Harvey Yang, Daniel G. Chica, Catherine Zhu, Jiaqi Cai, Geoffrey Diederich, Zhaoyu Liu, Xiaoyang Zhu, Xavier Roy, Ting Cao, Matthew W. Daniels, Jiun-Haw Chu, Di Xiao, Xiaodong Xu

Abstract: The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor u… ▽ More The magnetic tunnel junction (MTJ) is a backbone device for spintronics. Realizing next generation energy efficient MTJs will require operating mechanisms beyond the standard means of applying magnetic fields or large electrical currents. Here, we demonstrate a new concept for programmable MTJ operation via strain control of the magnetic states of CrSBr, a layered antiferromagnetic semiconductor used as the tunnel barrier. Switching the CrSBr from antiferromagnetic to ferromagnetic order generates a giant tunneling magnetoresistance ratio without external magnetic field at temperatures up to ~ 140 K. When the static strain is set near the phase transition, applying small strain pulses leads to active flipping of layer magnetization with controlled layer number and thus magnetoresistance states. Further, finely adjusting the static strain to a critical value turns on stochastic switching between metastable states, with a strain-tunable sigmoidal response curve akin to the stochastic binary neuron. Our results highlight the potential of strain-programmable van der Waals MTJs towards spintronic applications, such as magnetic memory, random number generation, and probabilistic and neuromorphic computing. △ Less

Submitted 9 January, 2023; originally announced January 2023.

Anomalous Second Harmonic Generation from Atomically Thin MnBi2Te4

Authors: Jordan Fonseca, Geoffrey M. Diederich, Dmitry Ovchinnikov, Jiaqi Cai, Chong Wang, Jiaqiang Yan, Di Xiao, Xiaodong Xu

Abstract: MnBi2Te4 is a van der Waals topological insulator with intrinsic intralayer ferromagnetic exchange and A-type antiferromagnetic interlayer coupling. Theoretically, it belongs to a class of structurally centrosymmetric crystals whose layered antiferromagnetic order breaks inversion symmetry for even layer numbers, making optical second harmonic generation (SHG) an ideal probe of the coupling betwee… ▽ More MnBi2Te4 is a van der Waals topological insulator with intrinsic intralayer ferromagnetic exchange and A-type antiferromagnetic interlayer coupling. Theoretically, it belongs to a class of structurally centrosymmetric crystals whose layered antiferromagnetic order breaks inversion symmetry for even layer numbers, making optical second harmonic generation (SHG) an ideal probe of the coupling between the crystal and magnetic structures. Here, we perform magnetic field and temperature-dependent SHG measurements on MnBi2Te4 flakes ranging from bulk to monolayer thickness. We find that the dominant SHG signal from MnBi2Te4 is unexpectedly unrelated to both magnetic state and layer number. We suggest that surface SHG is the likely source of the observed strong SHG, whose symmetry matches that of the MnBi2Te4-vacuum interface. Our results highlight the importance of considering the surface contribution to inversion symmetry-breaking in van der Waals centrosymmetric magnets. △ Less

Submitted 13 December, 2022; originally announced December 2022.

Electronic properties of monolayer copper selenide with one-dimensional moiré patterns

Authors: Gefei Niu, Jianchen Lu, Jianqun Geng, Shicheng Li, Hui Zhang, Wei Xiong, Zilin Ruan, Yong Zhang, Boyu Fu, Lei Gao, Jinming Cai

Abstract: Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional (1D) moiré patterns owing to the uniaxial strain along one of three equivalent orientations of Cu(111) substrates. Here, by combining low-temperature scanning… ▽ More Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional (1D) moiré patterns owing to the uniaxial strain along one of three equivalent orientations of Cu(111) substrates. Here, by combining low-temperature scanning tunneling microscopy/spectroscopy (STM/S) experiments and density functional theory (DFT) calculations, we systematically investigate the electronic properties of the strained CuSe monolayer on the Cu(111) substrate. Our results show the semiconducting feature of CuSe monolayer with a band gap of 1.28 eV and the 1D periodical modulation of electronic properties by the 1D moiré patterns. Except for the uniaxially strained CuSe monolayer, we observed domain boundary and line defects in the CuSe monolayer, where the biaxial-strain and strain-free conditions can be investigated respectively. STS measurements for the three different strain regions show that the first peak in conduction band will move downward with the increasing strain. DFT calculations based on the three CuSe atomic models with different strain inside reproduced the peak movement. The present findings not only enrich the fundamental comprehension toward the influence of strain on electronic properties at 2D limit, but also offer the benchmark for the development of 2D semiconductor materials. △ Less

Submitted 5 November, 2022; originally announced November 2022.

Comments: 14 pages, 12 figures, 25 reference

Photo-accelerated water dissociation across one-atom-thick electrodes

Authors: J. Cai, E. Griffin, V. Guarochico-Moreira, D. Barry, B. Xin, S. Huang, A. K. Geim, F. M. Peeters, M. Lozada-Hidalgo

Abstract: Recent experiments demonstrated that interfacial water dissociation (H2O = H+ + OH-) could be accelerated exponentially by an electric field applied to graphene electrodes, a phenomenon related to the Wien effect. Here we report an order-of-magnitude acceleration of the interfacial water dissociation reaction under visible-light illumination. This process is accompanied by spatial separation of pr… ▽ More Recent experiments demonstrated that interfacial water dissociation (H2O = H+ + OH-) could be accelerated exponentially by an electric field applied to graphene electrodes, a phenomenon related to the Wien effect. Here we report an order-of-magnitude acceleration of the interfacial water dissociation reaction under visible-light illumination. This process is accompanied by spatial separation of protons and hydroxide ions across one-atom-thick graphene and enhanced by strong interfacial electric fields. The found photo-effect is attributed to the combination of graphene's perfect selectivity with respect to protons, which prevents proton-hydroxide recombination, and to proton transport acceleration by the Wien effect, which occurs in synchrony with the water dissociation reaction. Our findings provide fundamental insights into ion dynamics near atomically-thin proton-selective interfaces and suggest that strong interfacial fields can enhance and tune very fast ionic processes, which is of relevance for applications in photo-catalysis and designing reconfigurable materials. △ Less

Submitted 31 October, 2022; originally announced October 2022.

Journal ref: Nano Letters (2022)

Dynamic Hardness Evolution in Metals from Impact Induced Gradient Dislocation Density

Authors: Jizhe Cai, Claire Griesbach, Savannah G. Ahnen, Ramathasan Thevamaran

Abstract: A clear understanding of the dynamic behavior of metals is critical for developing superior structural materials as well as for improving material processing techniques such as cold spray and shot peening. Using a high velocity (from 120 m/s to 700 m/s; strain rates >10^7 1/s) micro-projectile impact testing and quasistatic (strain rates: 10^-2 1/s) nanoindentation, we investigate the strain-rate-… ▽ More A clear understanding of the dynamic behavior of metals is critical for developing superior structural materials as well as for improving material processing techniques such as cold spray and shot peening. Using a high velocity (from 120 m/s to 700 m/s; strain rates >10^7 1/s) micro-projectile impact testing and quasistatic (strain rates: 10^-2 1/s) nanoindentation, we investigate the strain-rate-dependent mechanical behavior of single-crystal aluminum substrates with (001), (011), and (111) crystal orientations. For all three crystal orientations, the dynamic hardness initially increases with increasing impact velocity and reaches a plateau regime at hardness 5 times higher than that of at quasistatic indentations. Based on coefficient of restitution and post mortem transmission Kikuchi diffraction analyses, we show that distinct plastic deformation mechanisms with a gradient dislocation density evolution govern the dynamic behavior. We also discover a distinct deformation regime-stable plastic regime-that emerge beyond the deeply plastic regime with unique strain rate insensitive microstructure evolution and dynamic hardness. Our work additionally demonstrates an effective approach to introduce strong spatial gradient in dislocation density in metals by high-velocity projectile impacts to enhance surface mechanical properties, as it can be employed in material processing techniques such as shot peening and surface mechanical attrition treatment. △ Less

Submitted 21 February, 2023; v1 submitted 26 October, 2022; originally announced October 2022.

Tetragonal Mexican-Hat Dispersion and Switchable Half-Metal State with Multiple Anisotropic Weyl Fermions in Penta-Graphene

Authors: Ningning Jia, Yongting Shi, Zhiheng Lv, Junting Qin, Jiangtao Cai, Xue Jiang, Jijun Zhao, Zhifeng Liu

Abstract: In past decades, the ever-expanding library of 2D carbon allotropes has yielded a broad range of exotic properties for the future carbon-based electronics. However, the known allotropes are all intrinsic nonmagnetic due to the paired valence electrons configuration. Based on the reported 2D carbon structure database and first-principles calculations, herein we demonstrate that inherent ferromagnet… ▽ More In past decades, the ever-expanding library of 2D carbon allotropes has yielded a broad range of exotic properties for the future carbon-based electronics. However, the known allotropes are all intrinsic nonmagnetic due to the paired valence electrons configuration. Based on the reported 2D carbon structure database and first-principles calculations, herein we demonstrate that inherent ferromagnetism can be obtained in the prominent allotrope, penta-graphene, which has an unique Mexican-hat valence band edge, giving rise to van Hove singularities and electronic instability. Induced by modest hole-doping, being achievable in electrolyte gate, the semiconducting pentagraphene can transform into different ferromagnetic half-metals with room temperature stability and switchable spin directions. In particular, multiple anisotropic Weyl states, including type-I and type-II Weyl cones and hybrid quasi Weyl nodal loop, can be found in a sizable energy window of spin-down half-metal under proper strains. These findings not only identify a promising carbon allotrope to obtain the inherent magnetism for carbon-based spintronic devices, but highlight the possibility to realize different Weyl states by combining the electronic and mechanical means as well. △ Less

Submitted 23 October, 2022; originally announced October 2022.

Creation of Chiral Interface Channels for Quantized Transport in Magnetic Topological Insulator Multilayer Heterostructures

Authors: Yi-Fan Zhao, Ruoxi Zhang, Jiaqi Cai, Deyi Zhuo, Ling-Jie Zhou, Zi-Jie Yan, Moses H. W. Chan, Xiaodong Xu, Cui-Zu Chang

Abstract: One-dimensional (1D) topologically protected states are usually formed at the interface between two-dimensional (2D) materials with different topological invariants. Therefore, 1D chiral interface channels (CICs) can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction can function as a chiral edge current distributer at zero m… ▽ More One-dimensional (1D) topologically protected states are usually formed at the interface between two-dimensional (2D) materials with different topological invariants. Therefore, 1D chiral interface channels (CICs) can be created at the boundary of two quantum anomalous Hall (QAH) insulators with different Chern numbers. Such a QAH junction can function as a chiral edge current distributer at zero magnetic field, but its realization remains challenging. Here, by employing an in-situ mechanical mask, we use molecular beam epitaxy (MBE) to synthesize QAH insulator junctions, in which two QAH insulators with different Chern numbers are connected along a 1D junction. For the junction between C = 1 and C = -1 QAH insulators, we observe quantized transport and demonstrate the appearance of the two parallel propagating CICs along the magnetic domain wall at zero magnetic field. Moreover, since the Chern number of the QAH insulators in magnetic topological insulator (TI)/TI multilayers can be tuned by altering magnetic TI/TI bilayer periods, the junction between two QAH insulators with arbitrary Chern numbers can be achieved by growing different periods of magnetic TI/TI on the two sides of the sample. For the junction between C = 1 and C = 2 QAH insulators, our quantized transport shows that a single CIC appears at the interface. Our work lays down the foundation for the development of QAH insulator-based electronic and spintronic devices, topological chiral networks, and topological quantum computations. △ Less

Submitted 8 October, 2022; originally announced October 2022.

Comments: 20 pages, 4 figures, comments are welcome

Journal ref: Nature Commun. 14, 770 (2023)

Mechanical Anisotropy and Multiple Direction-Dependent Dirac States in the Synthesized Ag3C20 Monolayer

Authors: Zhiheng Ly, Ningning Jia, Jiangtao Cai, Jijun Zhao, Zhifeng Liu

Abstract: Recently, a 2D orthorhombic silver-organic framework, Ag3C20 monolayer, was synthesized by assembling organic molecules linked with multiple aryl-metal bonds. Herein, via first-principles study, we demonstrate that owing to the unique bonding feature, Ag3C20 monolayer not only exhibits strong mechanical anisotropy, but also possesses various tunable direction-dependent Dirac states. Around the Fer… ▽ More Recently, a 2D orthorhombic silver-organic framework, Ag3C20 monolayer, was synthesized by assembling organic molecules linked with multiple aryl-metal bonds. Herein, via first-principles study, we demonstrate that owing to the unique bonding feature, Ag3C20 monolayer not only exhibits strong mechanical anisotropy, but also possesses various tunable direction-dependent Dirac states. Around the Fermi level blow, the intrinsic Dirac points form two antiparallel quasi type-III nodal lines protected by mirror symmetry, which can further evolve into hybrid nodal loops under tiny strains. Intriguingly, near the Fermi level above, a special semi-Dirac state can emerge under a critical strain by merging two type-I Dirac cone, which harbors direction-dependent strongly localized fermions, normal massive carries, and ultrafast Dirac fermions at the same time. These findings suggest that the mechanically sensitive Ag3C20 monolayer is a promising 2D material to realize the interesting Dirac physics and highly anisotropic multiple carries transport. △ Less

Submitted 28 August, 2022; originally announced August 2022.

Wien effect in interfacial water dissociation through proton-permeable graphene electrodes

Authors: J. Cai, E. Griffin, V. Guarochico-Moreira, D. Barry, B. Xin, M. Yagmurcukardes, S. Zhang, A. K. Geim, F. M. Peeters, M. Lozada-Hidalgo

Abstract: Strong electric fields can accelerate molecular dissociation reactions. The phenomenon known as the Wien effect was previously observed using high-voltage electrolysis cells that produced fields of about 10^7 V m-1, sufficient to accelerate the dissociation of weakly bound molecules (e.g., organics and weak electrolytes). The observation of the Wien effect for the common case of water dissociation… ▽ More Strong electric fields can accelerate molecular dissociation reactions. The phenomenon known as the Wien effect was previously observed using high-voltage electrolysis cells that produced fields of about 10^7 V m-1, sufficient to accelerate the dissociation of weakly bound molecules (e.g., organics and weak electrolytes). The observation of the Wien effect for the common case of water dissociation (H2O = H+ + OH-) has remained elusive. Here we study the dissociation of interfacial water adjacent to proton-permeable graphene electrodes and observe strong acceleration of the reaction in fields reaching above 10^8 V m-1. The use of graphene electrodes allow measuring the proton currents arising exclusively from the dissociation of interfacial water, while the electric field driving the reaction is monitored through the carrier density induced in graphene by the same field. The observed exponential increase in proton currents is in quantitative agreement with Onsager's theory. Our results also demonstrate that graphene electrodes can be valuable for the investigation of various interfacial phenomena involving proton transport. △ Less

Submitted 23 August, 2022; originally announced August 2022.

Report number: 13, 5776

Journal ref: Nature Communications (2022)

Experimental demonstration of topological bounds in quantum metrology

Authors: Min Yu, Xiangbei Li, Yaoming Chu, Bruno Mera, F. Nur Ünal, Pengcheng Yang, Yu Liu, Nathan Goldman, Jianming Cai

Abstract: Quantum metrology is deeply connected to quantum geometry, through the fundamental notion of quantum Fisher information. Inspired by advances in topological matter, it was recently suggested that the Berry curvature and Chern numbers of band structures can dictate strict lower bounds on metrological properties, hence establishing a strong connection between topology and quantum metrology. In this… ▽ More Quantum metrology is deeply connected to quantum geometry, through the fundamental notion of quantum Fisher information. Inspired by advances in topological matter, it was recently suggested that the Berry curvature and Chern numbers of band structures can dictate strict lower bounds on metrological properties, hence establishing a strong connection between topology and quantum metrology. In this work, we provide a first experimental verification of such topological bounds, by performing optimal quantum multi-parameter estimation and achieving the best possible measurement precision. By emulating the band structure of a Chern insulator, we experimentally determine the metrological potential across a topological phase transition, and demonstrate strong enhancement in the topologically non-trivial regime. Our work opens the door to metrological applications empowered by topology, with potential implications for quantum many-body systems. △ Less

Submitted 19 November, 2022; v1 submitted 1 June, 2022; originally announced June 2022.

Comments: 6 pages, 4 figures + 13 pages (SI), comments are welcome

Journal ref: National Science Review, 11, nwae065 (2024)

Enhanced Signal-to-Noise Performance of EP-based Electromechanical Accelerometers

Authors: Rodion Kononchuk, Jizhe Cai, Fred Ellis, Ramathasan Thevamaran, Tsampikos Kottos

Abstract: Exceptional points (EP) are non-Hermitian spectral degeneracies where both eigenvalues and their corresponding eigenvectors coalesce. Recently, EPs have attracted a lot of attention as a means to enhance the responsivity of sensors, via the abrupt resonant detuning occurring in their proximity. In many cases, however, the EP implementation is accompanied by noise enhancement leading to the degrada… ▽ More Exceptional points (EP) are non-Hermitian spectral degeneracies where both eigenvalues and their corresponding eigenvectors coalesce. Recently, EPs have attracted a lot of attention as a means to enhance the responsivity of sensors, via the abrupt resonant detuning occurring in their proximity. In many cases, however, the EP implementation is accompanied by noise enhancement leading to the degradation of the signal-to-noise performance of the sensor . The excess noise can be of fundamental nature (due to the eigenbasis collapse) or of technical nature associated with the use of amplification mechanisms utilized for the realization of EPs. Here we show, using an EP-based $\mathcal{PT}$-symmetric electromechanical accelerometer, that the enhanced technical noise can be surpassed by the enhanced responsivity to applied accelerations. The noise due to eigenbasis collapse is mitigated by exploiting the detuning from a transmission peak degeneracy (TPD), which forms when the sensor is weakly coupled to transmission lines, as a sensitivity measurant. These TPDs occur at a frequency and controlled parameters for which the bi-orthogonal eigen-basis is still complete and are distinct from the EPs of the $\mathcal{PT}$-sensor. They also show a slightly enhanced detuning rate compared to the typically utilized EPs. Our device demonstrates a three-fold signal-to-noise ratio enhancement compared to configurations for which the system operates away from the TPD. △ Less

Submitted 31 January, 2022; originally announced January 2022.

Tunable plasmonic devices by integrating graphene with ferroelectric nanocavity

Authors: Junxiong Guo, Shangdong Li, Jianbo Chen, Ji Cai, Xin Gou, Shicai Wang, Jinghua Ye, Yu Liu, Lin Lin

Abstract: Graphene plasmons are able to become the fundermental of novel conceptual photonic devices, resulting from their unique characteristics containing excitation at room temperature and tunable spectral selectivity in different frequencies. The pursuit of efficiently exciting and manipulating graphene plasmons is necessary and significant for high-performance devices. Here, we investigate graphene pla… ▽ More Graphene plasmons are able to become the fundermental of novel conceptual photonic devices, resulting from their unique characteristics containing excitation at room temperature and tunable spectral selectivity in different frequencies. The pursuit of efficiently exciting and manipulating graphene plasmons is necessary and significant for high-performance devices. Here, we investigate graphene plasmon wave propagating in ferroelectric nanocavity array. We experimentally show that the the periodic ferroelectric polarizations could be used for doping graphene into desired spatial carrier density patterns. Based on a theoretical model that considers periodic ununiform conductivity across graphene sheet, the simulation results show surface plasmon polaritons (SPP) in graphene can be excited by an incident light in a similar way to the excitation of photonic crystal resonant modes. The graphene SPP resonance can be tuned from ~720 to ~1 000 cm-1 by rescaling the ferroelectric nanocavity array, and from ~540 to ~780 cm-1 by dynamically changing the applied gate voltage. Our strategy of graphene carrier engineering to excite SPP offers a promissing way for large-scale, non-destructive fabrication of novel graphene photonic devices. △ Less

Submitted 31 July, 2022; v1 submitted 11 January, 2022; originally announced January 2022.

Comments: 16 pages, 7 figures

Journal ref: Adv. Mater. Interfaces 2022, 9, 2200776

Tuning of Strong Nonlinearity in rf SQUID Meta-Atoms

Authors: Ethan Zack, Daimeng Zhang, Melissa Trepanier, Jingnan Cai, Tamin Tai, Nikos Lazarides, Johanne Hizanidis, Steven M. Anlage

Abstract: Strong nonlinearity of a self-resonant radio frequency superconducting quantum interference device (rf-SQUID) meta-atom is explored via intermodulation (IM) measurements. Previous work in zero dc magnetic flux showed a sharp onset of IM response as the frequency sweeps through the resonance. A second onset at higher frequency was also observed, creating a prominent gap in the IM response. By exten… ▽ More Strong nonlinearity of a self-resonant radio frequency superconducting quantum interference device (rf-SQUID) meta-atom is explored via intermodulation (IM) measurements. Previous work in zero dc magnetic flux showed a sharp onset of IM response as the frequency sweeps through the resonance. A second onset at higher frequency was also observed, creating a prominent gap in the IM response. By extending those measurements to nonzero dc flux, new dynamics are revealed, including: dc flux tunabililty of the aforementioned gaps, and enhanced IM response near geometric resonance of the rf-SQUID. These features observed experimentally are understood and analyzed theoretically through a combination of a steady state analytical modeling, and a full numerical treatment of the rf SQUID dynamics. The latter, in addition, predicts the presence of chaos in narrow parameter regimes. The understanding of intermodulation in rf-SQUID metamaterials is important for producing low-noise amplification of microwave signals and tunable filters. △ Less

Submitted 7 January, 2022; originally announced January 2022.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. E 105, 044202 (2022)

Crossover of Ising- to Rashba-Type Superconductivity in Epitaxial Bi2Se3/Monolayer NbSe2 Heterostructures

Authors: Hemian Yi, Lun-Hui Hu, Yuanxi Wang, Run Xiao, Jiaqi Cai, Danielle Reifsnyder Hickey, Chengye Dong, Yi-Fan Zhao, Ling-Jie Zhou, Ruoxi Zhang, Anthony R. Richardella, Nasim Alem, Joshua A. Robinson, Moses H. W. Chan, Xiaodong Xu, Nitin Samarth, Chao-Xing Liu, Cui-Zu Chang

Abstract: A topological insulator (TI) interfaced with an s-wave superconductor has been predicted to host an unusual form of superconductivity known as topological superconductivity (TSC). Molecular beam epitaxy (MBE) has been the primary approach in the scalable synthesis of the TI/superconductor heterostructures. Although the growth of epitaxial TI films on s-wave superconductors has been achieved, it re… ▽ More A topological insulator (TI) interfaced with an s-wave superconductor has been predicted to host an unusual form of superconductivity known as topological superconductivity (TSC). Molecular beam epitaxy (MBE) has been the primary approach in the scalable synthesis of the TI/superconductor heterostructures. Although the growth of epitaxial TI films on s-wave superconductors has been achieved, it remains an outstanding challenge for synthesizing atomically thin TI/superconductor heterostructures, which are critical for engineering the TSC phase. Here, we used MBE to grow Bi2Se3 films with the controlled thickness on monolayer NbSe2 and performed in-situ angle-resolved photoemission spectroscopy and ex-situ magneto-transport measurements on these Bi2Se3/monolayer NbSe2 heterostructures. We found that the emergence of Rashba-type bulk quantum well bands and spin-nondegenerate surface states coincides with a marked suppression of the in-plane upper critical magnetic field of the superconductivity in Bi2Se3/monolayer NbSe2 heterostructures. This is the signature of a crossover from Ising- to Rashba-type superconducting pairings, induced by altering Bi2Se3 film thickness. Our work opens a new route for exploring a robust TSC phase in TI/Ising superconductor heterostructures. △ Less

Submitted 18 April, 2022; v1 submitted 29 December, 2021; originally announced December 2021.

Comments: 27 pages, 4 pages, comments are welcome

Journal ref: Nature Mater. 21, 1366(2022)

Ferroelectric superdomain controlled graphene plasmon for tunable mid-infrared photodetector with dual-band spectral selectivity

Authors: Junxiong Guo, Lin Lin, Shangdong Li, Jianbo Chen, Shicai Wang, Wanjing Wu, Ji Cai, Tingchuan Zhou, Yu Liu, Huang Wen

Abstract: Dual-band infrared photodetectors (DBIPs) can discriminate desired signals from complex scenes and thus are highly expected for threat-warning, remote sensing, and astronomy applications. Conventional DBIPs with high-performances are, however, typically based on semiconductor thin films, but remain the challenges of complex spatial align, expensive growth and cooling requirement. Here, we report a… ▽ More Dual-band infrared photodetectors (DBIPs) can discriminate desired signals from complex scenes and thus are highly expected for threat-warning, remote sensing, and astronomy applications. Conventional DBIPs with high-performances are, however, typically based on semiconductor thin films, but remain the challenges of complex spatial align, expensive growth and cooling requirement. Here, we report a tunable graphene plasmonic photodetector with dual-band infrared spectral selectivity driven by ferroelectric superdomain. The periodic ferroelectric polarization array with nanoscale ring shapes provides ultrahigh electrostatic field for spatially doping of monolayer graphene to desired patterns, and is further used to excite and confine intrinsic graphene plasmons. Our devices exhibit tunable resonance photoresponse in both two bands of 3.7-16.3 um and 15.1-52.1 um. The numerical calculations show that our devices own ultrahigh responsivities of 667-1080 A W-1 at room temperature in range of 5-50 um. Our devices make possible the applications of infrared imaging system and both stationary and motion state of objects detection. These investigations provide a novel approach for advanced infrared system construction by employing simple, low-cost, uncooling multispectral detectors array. △ Less

Submitted 5 January, 2022; v1 submitted 9 November, 2021; originally announced November 2021.

Comments: 17 pages, 5 figures

Journal ref: Carbon 189C (2022) pp. 596-603

Type-printable photodetector arrays for multichannel meta-infrared imaging

Authors: Junxiong Guo, Shuyi Gu, Lin Lin, Yu Liu, Ji Cai, Hongyi Cai, Yu Tian, Yuelin Zhang, Qinghua Zhang, Ze Liu, Yafei Zhang, Xiaosheng Zhang, Yuan Lin, Wen Huang, Lin Gu, Jinxing Zhang

Abstract: Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers significant advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently typical multichannel infrared imaging systems consist of separating optical gratings or merging multi-cameras, which require complex… ▽ More Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers significant advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently typical multichannel infrared imaging systems consist of separating optical gratings or merging multi-cameras, which require complex circuit design and heavy power consumption, hindering the implementation of advanced human-eye-like imagers. Here, we present a novel approach for printable graphene plasmonic photodetector arrays driven by a ferroelectric superdomain for multichannel meta-infrared imaging with enhanced edge discrimination. The fabricated photodetectors exhibited multiple spectral responses with zero-bias operation by directly rescaling the ferroelectric superdomain instead of reconstructing the separated gratings. We also demonstrated enhanced and faster shape classification (98.1%) and edge detection (98.2%) using our multichannel infrared images compared with single-channel detectors. Our proof-of-concept photodetector arrays simplify multichannel infrared imaging systems and hold great potential for applications in efficient edge detection in human-brain-type machine vision. △ Less

Submitted 6 May, 2024; v1 submitted 9 November, 2021; originally announced November 2021.

Comments: Some specific concerns should be addressed or updated. e.g. Fig. 3d

Anomalous Loss Reduction Below Two-Level System Saturation in Aluminum Superconducting Resonators

Authors: Tamin Tai, Jingnan Cai, Steven M. Anlage

Abstract: Superconducting resonators are widely used in many applications such as qubit readout for quantum computing, and kinetic inductance detectors. These resonators are susceptible to numerous loss and noise mechanisms, especially the dissipation due to two-level systems (TLS) which become the dominant source of loss in the few-photon and low temperature regime. In this study, capacitively-coupled alum… ▽ More Superconducting resonators are widely used in many applications such as qubit readout for quantum computing, and kinetic inductance detectors. These resonators are susceptible to numerous loss and noise mechanisms, especially the dissipation due to two-level systems (TLS) which become the dominant source of loss in the few-photon and low temperature regime. In this study, capacitively-coupled aluminum half-wavelength coplanar waveguide resonators are investigated. Surprisingly, the loss of the resonators was observed to decrease with a lowering temperature at low excitation powers and temperatures below the TLS saturation. This behavior is attributed to the reduction of the TLS resonant response bandwidth with decreasing temperature and power to below the detuning between the TLS and the resonant photon frequency in a discrete ensemble of TLS. When response bandwidths of TLS are smaller than their detunings from the resonance, the resonant response and thus the loss is reduced. At higher excitation powers, the loss follows a logarithmic power dependence, consistent with predictions from the generalized tunneling model (GTM). A model combining the discrete TLS ensemble with the GTM is proposed and matches the temperature and power dependence of the measured internal loss of the resonator with reasonable parameters. △ Less

Submitted 29 November, 2023; v1 submitted 24 September, 2021; originally announced September 2021.

Journal ref: Adv Quantum Technol. 2023, 2200145

Symmetry-broken Chern insulators in twisted double bilayer graphene

Authors: Minhao He, Jiaqi Cai, Ya-Hui Zhang, Yang Liu, Yuhao Li, Takashi Taniguchi, Kenji Watanabe, David H. Cobden, Matthew Yankowitz, Xiaodong Xu

Abstract: Twisted double bilayer graphene (tDBG) has emerged as an especially rich platform for studying strongly correlated and topological states of matter. The material features moiré bands that can be continuously deformed by both perpendicular displacement field and twist angle. Here, we construct a phase diagram representing of the correlated and topological states as a function of these parameters, b… ▽ More Twisted double bilayer graphene (tDBG) has emerged as an especially rich platform for studying strongly correlated and topological states of matter. The material features moiré bands that can be continuously deformed by both perpendicular displacement field and twist angle. Here, we construct a phase diagram representing of the correlated and topological states as a function of these parameters, based on measurements on over a dozen tDBG devices encompassing the two distinct stacking configurations in which the constituent Bernal bilayer graphene sheets are rotated either slightly away from 0° or 60°. We find a hierarchy of symmetry-broken states that emerge sequentially as the twist angle approaches an apparent optimal value of $θ\approx$ 1.34°. Among them, we discover a sequence of symmetry-broken Chern insulator (SBCI) states that arise only within a narrow range of twist angles ($\approx$ 1.33° to 1.39°). We observe an associated anomalous Hall effect at zero field in all samples supporting SBCI states, indicating spontaneous time-reversal symmetry breaking and possible moiré unit cell enlargement at zero magnetic field. △ Less

Submitted 7 September, 2023; v1 submitted 16 September, 2021; originally announced September 2021.

Comments: 42 pages

Journal ref: Nano Letters (2023)

Design and Synthesis of Clathrate LaB8 with Superconductivity

Authors: Liang Ma, Xin Yang, Guangtao Liu, Hanyu Liu, Guochun Yang, Hui Wang, Jinqun Cai, Mi Zhou, Hongbo Wang

Abstract: Boron-based clathrate materials, typically with three-dimensional networks of B atoms, have tunable properties through substitution of guest atoms, but the tuning of B cages themselves has not yet been developed. By combining crystal structural search with the laser-heated diamond anvil cell technique, we successfully synthesized a new B-based clathrate boride, LaB8, at ~108 GPa and ~2100 K. The n… ▽ More Boron-based clathrate materials, typically with three-dimensional networks of B atoms, have tunable properties through substitution of guest atoms, but the tuning of B cages themselves has not yet been developed. By combining crystal structural search with the laser-heated diamond anvil cell technique, we successfully synthesized a new B-based clathrate boride, LaB8, at ~108 GPa and ~2100 K. The novel structure has a B-richest cage, with 26 B atoms encapsulating a single La atom. LaB8 demonstrates phonon-mediated superconductivity with an estimated transition temperature of 14 K at ambient pressure, mainly originating from electron-phonon coupling of B cage. This work creates a prototype platform for subsequent investigation on tunable electronic properties through the choice of captured atoms. △ Less

Submitted 6 September, 2021; originally announced September 2021.

Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal

Authors: Huixin Guo, Zexin Feng, Han Yan, Jiuzhao Liu, Jia Zhang, Xiaorong Zhou, Peixin Qin, Jialin Cai, Zhongming Zeng, Xin Zhang, Xiaoning Wang, Hongyu Chen, Haojiang Wu, Chengbao Jiang, Zhiqi Liu

Abstract: One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel junction devices based on effective manipulat… ▽ More One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel junction devices based on effective manipulation of antiferromagnetic spins. In this work, we demonstrate the giant piezoelectric strain control of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal - D019 hexagonal Mn3Ga. Furthermore, we built tunnel junction devices with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications. △ Less

Submitted 10 August, 2021; originally announced August 2021.

Comments: 16 pages, 5 figures

Journal ref: Adv. Mater. 32, 2002300 (2020)

Electric control of a canted-antiferromagnetic Chern insulator

Authors: Jiaqi Cai, Dmitry Ovchinnikov, Zaiyao Fei, Minhao He, Tiancheng Song, Zhong Lin, Chong Wang, David Cobden, Jiun-Haw Chu, Yong-Tao Cui, Cui-Zu Chang, Di Xiao, Jiaqiang Yan, Xiaodong Xu

Abstract: The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnB… ▽ More The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnBi$_2$Te$_4$ is a rare platform for realizing a canted-antiferromagnetic (cAFM) Chern insulator with electrical control. We show that the Chern insulator state with Chern number $C = 1$ appears as soon as the AFM to canted-AFM phase transition happens. The Chern insulator state is further confirmed by observing the unusual transition of the $C = 1$ state in the cAFM phase to the $C = 2$ orbital quantum Hall states in the magnetic field induced ferromagnetic phase. Near the cAFM-AFM phase boundary, we show that the Chern number can be toggled on and off by applying an electric field alone. We attribute this switching effect to the electrical field tuning of the exchange gap alignment between the top and bottom surfaces. Our work paves the way for future studies on topological cAFM spintronics and facilitates the development of proof-of-concept Chern insulator devices. △ Less

Submitted 9 July, 2021; originally announced July 2021.

Comments: 13 pages, 4 figures, and 5 supplementary figures. Comments are welcome

Anisotropic magnon-magnon coupling in synthetic antiferromagnets

Authors: Wei He, Z. K. Xie, Rui Sun, Meng Yang, Yang Li, Xiao-Tian Zhao, Wei Liu, Z. D. Zhang, Jian-Wang Cai, Zhao-Hua Cheng, Jie Lu

Abstract: The magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies. To induce the magnon-magnon coupling, the parity symmetry between two magnetization needs to be broken. Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric thickness of two magnetic layers and thus introdu… ▽ More The magnon-magnon coupling in synthetic antiferromagnets advances it as hybrid magnonic systems to explore the quantum information technologies. To induce the magnon-magnon coupling, the parity symmetry between two magnetization needs to be broken. Here we experimentally demonstrate a convenient method to break the parity symmetry by the asymmetric thickness of two magnetic layers and thus introduce a magnon-magnon coupling in Ir-based synthetic antiferromagnets CoFeB(10 nm)/Ir(tIr=0.6 nm, 1.2 nm)/CoFeB(13 nm). Remarkably, we find that the weakly uniaxial anisotropy field (~ 20 Oe) makes the magnon-magnon coupling anisotropic. The coupling strength presented by a characteristic anticrossing gap varies in the range between 0.54 GHz and 0.90 GHz for tIr =0.6 nm, and between nearly zero to 1.4 GHz for tIr = 1.2 nm, respectively. Our results demonstrate a feasible way to induce the magnon-magnon coupling by an asymmetric structure and tune the coupling strength by varying the direction of in-plane magnetic field. The magnon-magnon coupling in this highly tunable material system could open exciting perspectives for exploring quantum-mechanical coupling phenomena. △ Less

Submitted 11 May, 2021; v1 submitted 7 March, 2021; originally announced March 2021.

Comments: 19 pages, 3 figures

Journal ref: Chin. Phys. Lett. 38 057502 (2021)