A possible mechanism for the negative capacitance observed in organic devices
Authors:
X. Q. Wang,
C. B. Cai
Abstract:
The mechanism of negative capacitance, e.g. inductance, induced by a sufficient electrical field in the organic device is investigated. The cations in organic bulk are proposed to be driven by the applied voltage and to accumulate at the interface, and further to generate the surface states or media states. These states result in a larger junction current through the device, indicating the negativ…
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The mechanism of negative capacitance, e.g. inductance, induced by a sufficient electrical field in the organic device is investigated. The cations in organic bulk are proposed to be driven by the applied voltage and to accumulate at the interface, and further to generate the surface states or media states. These states result in a larger junction current through the device, indicating the negative capacitances which are simulated in three situations: impedance spectrum, capacitance measurement and current response. This simple kinetic model may be helpful to understand why the negative capacitance phenomenon is observed in various organic devices.
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Submitted 20 November, 2012; v1 submitted 30 October, 2012;
originally announced October 2012.
Phototransistor Behavior Based on Dye-Sensitized Solar Cell
Authors:
X. Q. Wang,
C. B. Cai,
Y. F. Wang,
W. Q. Zhou,
Y. M. Lu,
Z. Y. Liu
Abstract:
In the present work, a light-controlled device cell is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized by three types of transport behaviors: linear increase, saturated plateau and breakdown-like increase, which are actually of the typical performances for a photo-gated transistor. Moreover, an asymmetric behavior is obs…
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In the present work, a light-controlled device cell is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized by three types of transport behaviors: linear increase, saturated plateau and breakdown-like increase, which are actually of the typical performances for a photo-gated transistor. Moreover, an asymmetric behavior is observed in the voltage-current loops, which is believed to arise from the difference in the effective photo-conducting areas. The photovoltaic voltage between the shared counter electrode and drain (VCE-D) is investigated as well, clarifying that the predominant dark process in source and the predominant photovoltaic process in drain are series connected, modifying the electric potential levels and thus resulting in the characteristic phototransistor behaviors.
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Submitted 24 October, 2012;
originally announced October 2012.
