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Reflection and refraction of an electron spin at the junction between two two-dimensional regions with and without spin-orbit interaction
Authors:
Supriyo Bandyopadhyay,
Marc Cahay,
Jonathan Ludwick
Abstract:
We derive the reflection and refraction laws for an electron spin incident from a quasi-two-dimensional medium with no spin-orbit interaction on another with both Rashba and Dresselhaus spin-orbit interaction using only energy conservation. We obtain the well-known result that for an incident angle, there can be generally two different refraction angles for refraction into the two spin eigenstates…
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We derive the reflection and refraction laws for an electron spin incident from a quasi-two-dimensional medium with no spin-orbit interaction on another with both Rashba and Dresselhaus spin-orbit interaction using only energy conservation. We obtain the well-known result that for an incident angle, there can be generally two different refraction angles for refraction into the two spin eigenstates in the refraction medium, resulting in two different 'spin refractive indices' and two critical angles for total internal reflection. We derive expressions for the spin refractive indices, which are not constant for a given medium but depend on the incident electron's energy. If the effective mass of an electron in the refraction medium is larger than that in the incidence medium, then we show that for some incident electron energies and potential barrier at the interface, the spin refractive index of the incidence medium can lie between the two spin refractive indices of the refraction medium, resulting in only one critical angle. In that case, if the incident angle exceeds that critical angle, then refraction can occur into only one spin eigenstate in the refraction medium. If the system is engineered to make this happen, then it will be possible to obtain a very high degree of spin-polarized injection into the refraction medium. The amplitudes of reflection of the incident spin into its own spin eigenstate and the orthogonal spin eigenstate (due to spin flip at the interface), as well as the refraction amplitudes into the two spin eigenstates in the refraction medium are derived for an incident electron (with arbitrary spin polarization and incident energy) as a function of the angle of incidence.
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Submitted 4 April, 2021; v1 submitted 15 May, 2020;
originally announced May 2020.
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Work Function Characterization of the Directionally Solidified LaB6 VB2 Eutectic
Authors:
Tyson C. Back,
Steven B. Fairchild,
John Boeckl,
Marc Cahay,
Floor Derkink,
Gong Chen,
Andreas K. Schmid,
Ali Sayir
Abstract:
With its low work function and high mechanical strength, the LaB6/VB2 eutectic system is an interesting candidate for high performance thermionic emitters. For the development of device applications, it is important to understand the origin, value, and spatial distribution of the work function in this system. Here we combine thermal emission electron microscopy and low energy electron microscopy w…
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With its low work function and high mechanical strength, the LaB6/VB2 eutectic system is an interesting candidate for high performance thermionic emitters. For the development of device applications, it is important to understand the origin, value, and spatial distribution of the work function in this system. Here we combine thermal emission electron microscopy and low energy electron microscopy with Auger electron spectroscopy and physical vapour deposition of the constituent elements to explore physical and chemical conditions governing the work function of these surfaces. Our results include the observation that work function is lower (and emission intensity is higher) on VB2 inclusions than on the LaB6 matrix. We also observe that the deposition of atomic monolayer doses of vanadium results in surprisingly significant lowering of the work function with values as low as 1.1 eV.
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Submitted 31 March, 2018;
originally announced April 2018.
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Laser Stimulated Grain Growth in 304 Stainless Steel Anodes for Reduced Hydrogen Outgassing
Authors:
D. Gortat,
M. Sparkes,
S. B. Fairchild,
P. T. Murray,
M. M. Cahay,
T. C. Back,
G. J. Gruen,
N. P. Lockwood,
W. O Neill
Abstract:
Metal anodes in high power source (HPS) devices erode during operation due to hydrogen outgassing and plasma formation, both of which are thermally driven phenomena generated by the electron beam impacting the anode s surface. This limits the lowest achievable pressure in an HPS device, which reduces its efficiency. Laser surface melting the 304 stainless steel anodes by a continuous wave fiber la…
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Metal anodes in high power source (HPS) devices erode during operation due to hydrogen outgassing and plasma formation, both of which are thermally driven phenomena generated by the electron beam impacting the anode s surface. This limits the lowest achievable pressure in an HPS device, which reduces its efficiency. Laser surface melting the 304 stainless steel anodes by a continuous wave fiber laser showed a reduction in hydrogen outgassing by a factor of ~4 under 50 keV electron bombardment, compared to that from untreated stainless steel. This is attributed to an increase in the grain size (from 40 - 3516 micrometer2), which effectively reduces the number of characterized grain boundaries that serve as hydrogen trapping sites, making such laser treated metals excellent candidates for use in vacuum electronics.
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Submitted 31 March, 2018;
originally announced April 2018.
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Dependence of the 0.5(2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates
Authors:
P. P. Das,
A. Jones,
M. Cahay,
S. Kalita,
S. S. Mal,
N. S. Sterin,
T. R. Yadunath,
M. Advaitha,
S. T. Herbert
Abstract:
The observation of a 0.5 conductance plateau in asymmetrically biased quantum point contacts with in-plane side gates has been attributed to the onset of spin-polarized current through these structures. For InAs quantum point contacts with the same width but longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the side gates over which the 0.5…
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The observation of a 0.5 conductance plateau in asymmetrically biased quantum point contacts with in-plane side gates has been attributed to the onset of spin-polarized current through these structures. For InAs quantum point contacts with the same width but longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the side gates over which the 0.5 conductance plateau is observed when the QPC aspect ratio (ratio of length over width of the narrow portion of the structure) is increased by a factor 3. Non-equilibrium Green s function simulations indicate that the increase in the size of the 0.5 conductance plateau is due to an increased importance, over a larger range of common sweep voltage, of the effects of electron-electron interactions in QPC devices with larger aspect ratio. The use of asymmetrically biased QPCs with in-plane side gates and large aspect ratio could therefore pave the way to build robust spin injectors and detectors for the successful implementation of spin field effect transistors
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Submitted 11 February, 2017;
originally announced February 2017.
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Hysteresis in the Conductance of Asymmetrically Biased GaAs Quantum Point Contacts with in-plane Side Gates
Authors:
N. Bhandari,
M. Dutta,
J. Charles,
M. Cahay,
R. S. Newrock
Abstract:
We have observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact. The size of the hysteresis loop increases with the amount of bias asymmetry between the two side gates and depends on the polarity of the bias asymmetry. It is argued that hysteresis may constitute another indirect p…
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We have observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact. The size of the hysteresis loop increases with the amount of bias asymmetry between the two side gates and depends on the polarity of the bias asymmetry. It is argued that hysteresis may constitute another indirect proof of spontaneous spin polarization in the narrow portion of the quantum point contact.
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Submitted 16 March, 2014;
originally announced March 2014.
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Evidence for Adsorbate-Enhanced Field Emission from Carbon Nanotube Fibers
Authors:
P. T. Murray,
T. C. Back,
M. M. Cahay,
S. B. Fairchild,
B. Maruyama,
N. P. Lockwood,
M. Pasquali
Abstract:
We used residual gas analysis (RGA) to identify the species desorbed during field emission (FE) from a carbon nanotube (CNT) fiber. The RGA data show a sharp threshold for H2 desorption at an external field strength that coincides with a breakpoint in the FE data. A comprehensive model for the gradual transition of FE from adsorbate-enhanced CNTs at low bias to FE from CNTs with reduced H2 adsorba…
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We used residual gas analysis (RGA) to identify the species desorbed during field emission (FE) from a carbon nanotube (CNT) fiber. The RGA data show a sharp threshold for H2 desorption at an external field strength that coincides with a breakpoint in the FE data. A comprehensive model for the gradual transition of FE from adsorbate-enhanced CNTs at low bias to FE from CNTs with reduced H2 adsorbate coverage at high bias is developed which accounts for the gradual desorption of the H2 adsorbates, alignment of the CNTs at the fiber tip, and importance of self-heating effects with applied bias.
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Submitted 27 June, 2013;
originally announced June 2013.
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Intrinsic Bistability In Quantum Point Contacts with in-plane Side Gates
Authors:
J. Charles,
M. Cahay,
R. S. Newrock
Abstract:
We study the onset of intrinsic bistability and accompanying hysteresis in a single quantum point contact (QPC) with in-plane side gates in the presence of lateral spin-orbit coupling. The hysteresis in the conductance versus common gate voltage applied to the two side gates exists only if the narrow portion of the QPC is long enough. The hysteresis is absent if the effects of electron-electron in…
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We study the onset of intrinsic bistability and accompanying hysteresis in a single quantum point contact (QPC) with in-plane side gates in the presence of lateral spin-orbit coupling. The hysteresis in the conductance versus common gate voltage applied to the two side gates exists only if the narrow portion of the QPC is long enough. The hysteresis is absent if the effects of electron-electron interaction are neglected but increases with the strength of the electron-electron interaction. The hysteresis appears in the region of conductance anomalies, i.e., less than 2e2/h, and is due to multistable spin textures in these regions.
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Submitted 14 March, 2013;
originally announced March 2013.
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Tunable All Electric Spin Polarizer
Authors:
J. Charles,
N. Bhandari,
J. Wan,
M. Cahay,
R. S. Newrock
Abstract:
We propose a new device to create a tunable all-electric spin polarizer: a quantum point contact (QPC) with four gates -- two in-plane side gates in series. The first pair of gates, near the source, is asymmetrically biased to create spin polarization in the QPC channel. The second set of gates, near the drain, is symmetrically biased and that bias is varied to maximize the amount of spin polariza…
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We propose a new device to create a tunable all-electric spin polarizer: a quantum point contact (QPC) with four gates -- two in-plane side gates in series. The first pair of gates, near the source, is asymmetrically biased to create spin polarization in the QPC channel. The second set of gates, near the drain, is symmetrically biased and that bias is varied to maximize the amount of spin polarization in the channel. The range of common mode bias on the first set of gates over which maximum spin polarization can be achieved is much broader for the four gate structure compared with the case of a single pair of in-plane side gates.
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Submitted 8 February, 2013;
originally announced February 2013.
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Spin Polarization in a AlGaAs/GaAs Quantum Point Contact with in-plane side gates
Authors:
N. Bhandari,
P. P. Das,
M. Cahay,
R. S. Newrock,
S. T. Herbert
Abstract:
We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T=4.2K as a funct…
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We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T=4.2K as a function of the potential asymmetry between the side gates. The observation of spontaneous spin polarization in a side-gated GaAs QPC could eventually lead to the realization of an all-electric spin-valve at tens of degrees Kelvin.
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Submitted 20 April, 2012;
originally announced April 2012.
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Improving the efficiency of organic light emitting diodes by use of a diluted light-emitting layer
Authors:
S. H. Mohan,
K. Garre,
N. Bhandari,
M. Cahay
Abstract:
The use of a thin mixed layer consisting of an inert diluent material and a light emitting material between the hole-transport layer and electron-transport layer of organic light-emitting diodes leads to an increase in the external quantum efficiency. The efficiency improvement is highly dependent on the thickness of the diluted light-emitting layer and driving current. Significant improvement see…
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The use of a thin mixed layer consisting of an inert diluent material and a light emitting material between the hole-transport layer and electron-transport layer of organic light-emitting diodes leads to an increase in the external quantum efficiency. The efficiency improvement is highly dependent on the thickness of the diluted light-emitting layer and driving current. Significant improvement seen at low current densities is explained in terms of effective hole confinement by the mixed layer while a modest decreases in efficiency at higher current densities may be attributed to luminescence quenching at the hole-transport layer/inert diluents material interface. The phenomena are demonstrated with three different inert diluents materials. A maximum external quantum efficiency improvement of about 40% is found for a diluted light-emitting layer thickness between 40 Å and 60 Å.
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Submitted 13 July, 2011;
originally announced July 2011.
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Rare-earth monosulfides as durable and efficient cold cathodes
Authors:
M. Cahay,
S. B. Fairchild,
L. Grazulis,
P. T. Murray,
T. C. Back,
P. Boolchand,
V. Semet,
V. T. Binh,
X. Wu,
D. Poitras,
D. J. Lockwood,
F. Yu,
V. Kuppa
Abstract:
In their rocksalt structure, rare-earth monosulfides offer a more stable alternative to alkali metals to attain low or negative electron affinity when deposited on various III-V and II-VI semiconductor surfaces. In this article, we first describe the successful deposition of Lanthanum Monosulfide via pulsed laser deposition on Si and MgO substrates and alumina templates. These thin films have been…
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In their rocksalt structure, rare-earth monosulfides offer a more stable alternative to alkali metals to attain low or negative electron affinity when deposited on various III-V and II-VI semiconductor surfaces. In this article, we first describe the successful deposition of Lanthanum Monosulfide via pulsed laser deposition on Si and MgO substrates and alumina templates. These thin films have been characterized by X-ray diffraction, atomic force microscopy, high resolution transmission electron microscopy, ellipsometry, Raman spectroscopy, ultraviolet photoelectron spectroscopy and Kelvin probe measurements. For both LaS/Si and LaS/MgO thin films, the effective work function of the submicron thick thin films was determined to be about 1 eV from field emission measurements using the Scanning Anode Field Emission Microscopy technique. The physical reasons for these highly desirable low work function properties were explained using a patchwork field emission model of the emitting surface. In this model, nanocrystals of low work function materials having a <100> orientation perpendicular to the surface and outcropping it are surrounded by a matrix of amorphous materials with higher work function. To date, LaS thin films have been used successfully as cold cathode emitters with measured emitted current densities as high as 50 A/cm2. Finally, we describe the successful growth of LaS thin films on InP substrates and, more recently, the production of LaS nanoballs and nanoclusters using Pulsed Laser Ablation.
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Submitted 13 July, 2011;
originally announced July 2011.
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Anamolous conductance plateau in an asymmetrically biased InAs/InAlAs quantum point contact
Authors:
P. P. Das,
K. B. Chetry,
N. Bhandari,
J. Wan,
M. Cahay,
R. S. Newrock,
S. T. Herbert
Abstract:
The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an inter…
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The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an intermediate range (around 3 V) of bias asymmetry. It is quite robust, being observed over a maximum range of nearly 1V of the sweep voltage common to the two in-plane gates. Our conductance measurements show evidence of surface roughness scattering from the side walls of the QPC. We show that a strong perpendicular magnetic field leads to magnetic confinement in the channel which reduces the importance of scattering from the side walls and favors the onset of near ballistic transport through the QPC.
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Submitted 13 July, 2011;
originally announced July 2011.
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Influence of Impurity Scattering on the Conductance Anomalies of Quantum Point Contacts with Lateral Spin-Orbit Coupling
Authors:
J. Wan,
M. Cahay,
P. P. Das,
R. S. Newrock
Abstract:
We have recently shown that asymmetric lateral spin orbit coupling (LSOC) resulting from the lateral in-plane electric field of the confining potential of a side-gated quantum point contact (QPC) can be used to create a strongly spin- polarized current by purely electrical means1 in the absence of applied magnetic field. Using the non-equilibrium Green function formalism (NEGF) analysis of a small…
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We have recently shown that asymmetric lateral spin orbit coupling (LSOC) resulting from the lateral in-plane electric field of the confining potential of a side-gated quantum point contact (QPC) can be used to create a strongly spin- polarized current by purely electrical means1 in the absence of applied magnetic field. Using the non-equilibrium Green function formalism (NEGF) analysis of a small model QPC2, three ingredients were found to be essential to generate the strong spin polarization: an asymmetric lateral confinement, a LSOC induced by the lateral confining potential of the QPC, and a strong electron-electron (e-e) interaction. In this paper, NEGF is used to study how the spin polarization is affected by the presence of impurities in the central portion of the QPC. It is found that the number, location, and shape of the conductance anomalies, occurring below the first quantized conductance plateau (G0=2e2/h), are strongly dependent on the nature (attractive or repulsive) and the locations of the impurities. We show that the maximum of the conductance spin polarization is affected by the presence of impurities. For QPCs with impurities off-center, a conductance anomaly appears below the first integer step even for the case of symmetric bias on the two side gates. These results are of practical importance if QPCs in series are to be used to fabricate all-electrical spin valves with large ON/OFF conductance ratio.
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Submitted 10 July, 2011;
originally announced July 2011.
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Spin Texture in Quantum Point Contacts in the Presence of Lateral Spin Orbit Coupling
Authors:
J. Wan,
M. Cahay,
P. Debray,
R. S. Newrock
Abstract:
A non-equilibrium Green's function formalism is used to study in detail the ballistic conductance of asymmetrically biased side-gated quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling and electron-electron interaction for a wide range of QPC dimensions and gate bias voltage. Various conductance anomalies are predicted below the first quantized conductance plateau (G0=2e2…
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A non-equilibrium Green's function formalism is used to study in detail the ballistic conductance of asymmetrically biased side-gated quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling and electron-electron interaction for a wide range of QPC dimensions and gate bias voltage. Various conductance anomalies are predicted below the first quantized conductance plateau (G0=2e2/h) which occur due to spontaneous spin polarization in the narrowest portion of the QPC. The number of observed conductance anomalies increases with increasing aspect ratio (length/width) of the QPC constriction. These anomalies are fingerprints of spin textures in the narrow portion of the QPC.
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Submitted 30 September, 2010;
originally announced September 2010.
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Electron Spin for Classical Information Processing: A Brief Survey of Spin-Based Logic Devices, Gates and Circuits
Authors:
Supriyo Bandyopadhyay,
Marc Cahay
Abstract:
In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an information-processing device invariably causes current flow and an associated dissipation. Replacing charge with the "spin" of an electron to encode information may eliminate muc…
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In electronics, information has been traditionally stored, processed and communicated using an electron's charge. This paradigm is increasingly turning out to be energy-inefficient, because movement of charge within an information-processing device invariably causes current flow and an associated dissipation. Replacing charge with the "spin" of an electron to encode information may eliminate much of this dissipation and lead to more energy-efficient "green electronics". This realization has spurred significant research in spintronic devices and circuits where spin either directly acts as the physical variable for hosting information or augments the role of charge. In this review article, we discuss and elucidate some of these ideas, and highlight their strengths and weaknesses. Many of them can potentially reduce energy dissipation significantly, but unfortunately are error-prone and unreliable. Moreover, there are serious obstacles to their technological implementation that may be difficult to overcome in the near term.
This review addresses three constructs: (1) single devices or binary switches that can be constituents of Boolean logic gates for digital information processing, (2) complete gates that are capable of performing specific Boolean logic operations, and (3) combinational circuits or architectures (equivalent to many gates working in unison) that are capable of performing universal computation.
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Submitted 21 September, 2009;
originally announced September 2009.
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The effective spin concept to analyze coherent charge transport in mesoscopic systems
Authors:
J. Wan,
W. Liu,
M. Cahay,
V. Gasparian,
S. Bandyopadhyay
Abstract:
An effective spin concept is introduced to examine the mathematical and physical analogy between phase coherent charge transport in mesoscopic systems and quantum operations on spin based qubits. When coupled with the Bloch sphere concept, this isomorphism allows formulation of transport problems in a language more familiar to researchers in the field of spintronics and quantum computing. We exe…
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An effective spin concept is introduced to examine the mathematical and physical analogy between phase coherent charge transport in mesoscopic systems and quantum operations on spin based qubits. When coupled with the Bloch sphere concept, this isomorphism allows formulation of transport problems in a language more familiar to researchers in the field of spintronics and quantum computing. We exemplify the synergy between charge tunneling and spin qubit unitary operations by recasting well-known problems of tunneling through a delta scatterer, a resonant tunneling structure, a superlattice structure, and arrays of elastic scatterers, in terms of specific unitary operations (rotations) of a spinor on the Bloch sphere.
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Submitted 15 September, 2009;
originally announced September 2009.
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Possible origin of the 0.5 plateau in the ballistic conductance of quantum point contacts
Authors:
J. Wan,
M. Cahay,
P. Debray,
R. Newrock
Abstract:
A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In single electron modeling of transport, this triggers a spo…
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A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In single electron modeling of transport, this triggers a spontaneous but insignificant spin polarization in the QPC. However, the spin polarization of the QPC is enhanced substantially when the effect of electron-electron interaction is included. The spin polarization is strong enough to result in the occurrence of a conductance plateau at 0.5G0 (G0 = 2e2/h) in the absence of any external magnetic field. In our simulations of a model QPC device, the 0.5 plateau is found to be quite robust and survives up to a temperature of 40K. The spontaneous spin polarization and the resulting magnetization of the QPC can be reversed by flipping the polarity of the source to drain bias or the potential difference between the two SGs. These numerical simulations are in good agreement with recent experimental results for side-gated QPCs made from the low band gap semiconductor InAs.
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Submitted 26 August, 2009; v1 submitted 23 March, 2009;
originally announced March 2009.
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All-Electric Quantum Point Contact Spin Valve
Authors:
P. Debray,
J. Wan,
S. M. S. Rahman,
R. S. Newrock,
M. Cahay,
A. T. Ngo,
S. E. Ulloa,
S. T. Herbert,
M. Muhammad,
M. Johnson
Abstract:
This paper has been withdrawn by the author because in the main text some discussion parts were inadvertently added by mistake.
This paper has been withdrawn by the author because in the main text some discussion parts were inadvertently added by mistake.
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Submitted 29 May, 2009; v1 submitted 15 January, 2009;
originally announced January 2009.
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The inequality of charge and spin diffusion coefficients
Authors:
S. Pramanik,
S. Bandyopadhyay,
M. Cahay
Abstract:
Since spin and charge are both carried by electrons (or holes) in a solid, it is natural to assume that charge and spin diffusion coefficients will be the same. Drift-diffusion models of spin transport typically assume so. Here, we show analytically that the two diffusion coefficients can be vastly different in quantum wires. Although we do not consider quantum wells or bulk systems, it is likel…
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Since spin and charge are both carried by electrons (or holes) in a solid, it is natural to assume that charge and spin diffusion coefficients will be the same. Drift-diffusion models of spin transport typically assume so. Here, we show analytically that the two diffusion coefficients can be vastly different in quantum wires. Although we do not consider quantum wells or bulk systems, it is likely that the two coefficients will be different in those systems as well. Thus, it is important to distinguish between them in transport models, particularly those applied to quantum wire based devices
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Submitted 14 July, 2008;
originally announced July 2008.
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Transverse spin relaxation time in organic molecules: A possible platform for fault tolerant room temperature quantum computing
Authors:
B. Kanchibotla,
S. Pramanik,
S. Bandyopadhyay,
M. Cahay
Abstract:
We report measurement of the ensemble averaged transverse spin relaxation time (T2*) in bulk and few molecules of the organic semiconductor tris(8-hydroxyquinolinolato aluminum) or Alq3. This system exhibits two characteristic T2* times, the longer of which is temperature-independent and the shorter is temperature-dependent, indicating that the latter is most likely limited by spin-phonon intera…
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We report measurement of the ensemble averaged transverse spin relaxation time (T2*) in bulk and few molecules of the organic semiconductor tris(8-hydroxyquinolinolato aluminum) or Alq3. This system exhibits two characteristic T2* times, the longer of which is temperature-independent and the shorter is temperature-dependent, indicating that the latter is most likely limited by spin-phonon interaction. Based on the measured data, we infer that the single particle T2 time is long enough to meet Knill's criterion for fault tolerant quantum computing, even at room temperature. Alq3 is also an optically active organic and we propose a simple optical scheme for spin qubit read out. Moreover, we found that the temperature-dependent T2* time is considerably shorter in bulk Alq3 powder than in few molecules confined in 1-2 nm sized cavities, which is suggestive of a new type of ``phonon bottleneck effect''. This is very intriguing for organic molecules where carriers are always localized over individual molecules but the phonons are delocalized.
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Submitted 14 July, 2008;
originally announced July 2008.
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A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio
Authors:
J. Wan,
M. Cahay,
S. Bandyopadhyay
Abstract:
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF…
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We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF conductance remains fairly large (~ 60) up to a temperature of 10 K. This device also has excellent inverter characteristics, making it attractive for applications in low power and high density Boolean logic circuits.
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Submitted 9 November, 2007;
originally announced November 2007.
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A Digital Switch and Femto-Tesla Magnetic Field Sensor Based on Fano Resonance in a Spin Field Effect Transistor
Authors:
J. Wan,
M. Cahay,
S. Bandyopadhyay
Abstract:
We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferromagnets are half-metallic, so that the Fermi level can be placed above the majority but below the minority spin band. In that case, the majority spin…
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We show that a Spin Field Effect Transistor, realized with a semiconductor quantum wire channel sandwiched between half-metallic ferromagnetic contacts, can have Fano resonances in the transmission spectrum. These resonances appear because the ferromagnets are half-metallic, so that the Fermi level can be placed above the majority but below the minority spin band. In that case, the majority spins will be propagating, but the minority spins will be evanescent. At low temperatures, the Fano resonances can be exploited to implement a digital binary switch that can be turned on or off with a very small gate voltage swing of few tens of microvolts, leading to extremely small dynamic power dissipation during switching. An array of 500,000 x 500,000 such transistors can detect ultrasmall changes in a magnetic field with a sensitivity of 1 femto-Tesla/sqrt{Hz}, if each transistor is biased near a Fano resonance.
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Submitted 9 November, 2007;
originally announced November 2007.
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Response to "Response to the Comment on 'Performance of a Spin Based Insulated Gate Field Effect Transistor' "
Authors:
S. Bandyopadhyay,
M. Cahay
Abstract:
We show that the arguments in the posting cond-mat/0607432 by Flatte and Hall are flawed and untenable. Their spin based transistor cannot work as claimed because of fundamental scientific barriers, which cannot be overcome now, or ever. Their device is not likely to work as a transistor at room temperature, let alone outperform the traditional MOSFET, as claimed.
We show that the arguments in the posting cond-mat/0607432 by Flatte and Hall are flawed and untenable. Their spin based transistor cannot work as claimed because of fundamental scientific barriers, which cannot be overcome now, or ever. Their device is not likely to work as a transistor at room temperature, let alone outperform the traditional MOSFET, as claimed.
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Submitted 26 July, 2006;
originally announced July 2006.
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Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]
Authors:
S. Bandyopadhyay,
M. Cahay
Abstract:
In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current than a comparable metal oxide semiconductor field effect transistor (MOSFET). Here, we show that all three claims of HF are invalid.
In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current than a comparable metal oxide semiconductor field effect transistor (MOSFET). Here, we show that all three claims of HF are invalid.
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Submitted 23 April, 2006;
originally announced April 2006.
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Can a non-ideal metal ferromagnet inject spin into a semiconductor with 100% efficiency without a tunnel barrier?
Authors:
J. Wan,
M. Cahay,
S. Bandyopadhyay
Abstract:
Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable tunnel barrier at the interface. In this paper, we show that, at absolute zero temperature, 100% spin injection efficiency from a non-ideal metal ferromagnet int…
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Current understanding of spin injection tells us that a metal ferromagnet can inject spin into a semiconductor with 100% efficiency if either the ferromagnet is an ideal half metal with 100% spin polarization, or there exists a suitable tunnel barrier at the interface. In this paper, we show that, at absolute zero temperature, 100% spin injection efficiency from a non-ideal metal ferromagnet into a semiconductor quantum wire can be reached at certain injection energies, without a tunnel barrier, provided there is an axial magnetic field along the direction of current flow as well as a spin orbit interaction in the semiconductor. At these injection energies, spin is injected only from the majority spin band of the ferromagnetic contact, resulting in 100% spin injection efficiency. This happens because of the presence of antiresonances in the transmission coefficient of the minority spins when their incident energies coincide with Zeeman energy states in the quantum wire.
At absolute zero and below a critical value of the axial magnetic field, there are two distinct Zeeman energy states and therefore two injection energies at which ideal spin filtering is possible; above the critical magnetic field there is only one such injection energy. The spin injection efficiency rapidly decreases as the temperature increases. The rate of decrease is slower when the magnetic field is above the critical value. The appropriate choice of semiconductor materials and structures necessary to maintain a large spin injection efficiency at elevated temperatures is discussed.
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Submitted 14 February, 2006;
originally announced February 2006.
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Spin relaxation of "upstream" electrons in quantum wires: Failure of the drift diffusion model
Authors:
Sandipan Pramanik,
Supriyo Bandyopadhyay,
Marc Cahay
Abstract:
The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in a solid decays exponentially with distance due to spin dephasing interactions. The characteristic length scale associated with this decay is the spin diffusio…
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The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in a solid decays exponentially with distance due to spin dephasing interactions. The characteristic length scale associated with this decay is the spin diffusion length. The DD model also predicts that this length is different for ``upstream'' electrons traveling in a decelerating electric field than for ``downstream'' electrons traveling in an accelerating field. However this picture ignores energy quantization in confined systems (e.g. quantum wires) and therefore fails to capture the non-trivial influence of subband structure on spin relaxation. Here we highlight this influence by simulating upstream spin transport in a multi-subband quantum wire, in the presence of D'yakonov-Perel' spin relaxation, using a semi-classical model that accounts for the subband structure rigorously.
We find that upstream spin transport has a complex dynamics that defies the simplistic definition of a ``spin diffusion length''.
In fact, spin does not decay exponentially or even monotonically with distance, and the drift diffusion picture fails to explain the qualitative behavior, let alone predict quantitative features accurately. Unrelated to spin transport, we also find that upstream electrons undergo a ``population inversion'' as a consequence of the energy dependence of the density of states in a quasi one-dimensional structure.
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Submitted 9 February, 2006;
originally announced February 2006.
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Spin relaxation of "upstream" electrons: beyond the drift diffusion model
Authors:
Sandipan Pramanik,
Supriyo Bandyopadhyay,
Marc Cahay
Abstract:
The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in a solid decays exponentially with distance due to spin dephasing interactions. The characteristic length scale associated with this decay is the spin diffusio…
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The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in a solid decays exponentially with distance due to spin dephasing interactions. The characteristic length scale associated with this decay is the spin diffusion length. The DD model also predicts that this length is different for ``upstream'' electrons traveling in a decelerating electric field than for ``downstream'' electrons traveling in an accelerating field. However this picture ignores energy quantization in confined systems (e.g. quantum wires) and therefore fails to capture the non-trivial influence of subband structure on spin relaxation. Here we highlight this influence by simulating upstream spin transport in a multi-subband quantum wire, in the presence of D'yakonov-Perel' spin relaxation, using a semi-classical model that accounts for the subband structure rigorously. We find that upstream spin transport has a complex dynamics that defies the simplistic definition of a ``spin diffusion length''. In fact, spin does not decay exponentially or even monotonically with distance, and the drift diffusion picture fails to explain the qualitative behavior, let alone predict quantitative features accurately. Unrelated to spin transport, we also find that upstream electrons undergo a ``population inversion'' as a consequence of the energy dependence of the density of states in a quasi one-dimensional structure.
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Submitted 1 November, 2005;
originally announced November 2005.
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Spin relaxation in a nanowire organic spin valve: Observation of extremely long spin relaxation times
Authors:
S. Pramanik,
C-G. Stefanita,
S. Bandyopadhyay,
K. Garre,
N. Harth,
M. Cahay
Abstract:
We report spin valve behavior in an organic nanowire consisting of three layers - cobalt, Alq3 and nickel - all nominally 50 nm in diameter. Based on the data, we conclude that the dominant spin relaxation mechanism in Alq3 is the Elliott-Yafet mode. Despite the very short momentum relaxation time, the spin relaxation time is found to be very long - at least a few milliseconds - and relatively t…
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We report spin valve behavior in an organic nanowire consisting of three layers - cobalt, Alq3 and nickel - all nominally 50 nm in diameter. Based on the data, we conclude that the dominant spin relaxation mechanism in Alq3 is the Elliott-Yafet mode. Despite the very short momentum relaxation time, the spin relaxation time is found to be very long - at least a few milliseconds - and relatively temperature independent up to 100 K. To our knowledge, this is the first demonstration of an organic nanoscale spin valve, as well as the first determination of the primary spin relaxation mechanism in organics. The unusually long spin relaxation time makes these materials ideal platforms for some areas of spintronics.
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Submitted 29 May, 2006; v1 submitted 30 August, 2005;
originally announced August 2005.
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Can the interface between a non-ideal ferromagnet and a semiconductor quantum wire acts as an ideal spin filter?
Authors:
Marc Cahay,
Supriyo Bandyopadhyay
Abstract:
The problem of spin injection across the interface between a non-ideal ferromagnet (less than 100% spin polarization) and a semiconductor (paramagnetic) quantum wire is examined in the presence of Rashba spin orbit coupling and an axial magnetic field along the wire axis. The field is caused by the ferromagnet magnetized along the wire axis. At low temperatures and for certain injection energies…
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The problem of spin injection across the interface between a non-ideal ferromagnet (less than 100% spin polarization) and a semiconductor (paramagnetic) quantum wire is examined in the presence of Rashba spin orbit coupling and an axial magnetic field along the wire axis. The field is caused by the ferromagnet magnetized along the wire axis. At low temperatures and for certain injection energies, the interface can act as an ideal spin filter allowing injection only from the majority spin band of the ferromagnet. Thus, 100% spin filtering can take place even if the ferromagnet itself is less than 100% spin polarized. Below a critical value of the magnetic field, there are two injection energies for which ideal (100%) spin filtering is possible; above this critical field, there is only one such injection energy.
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Submitted 4 March, 2005;
originally announced March 2005.
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Are spin junction transistors suitable for signal processing?
Authors:
S. Bandyopadhyay,
M. Cahay
Abstract:
A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing functionality. Here, we show that some of these transistors unfortunately may not have sufficient voltage and current gains for signal processing. This is primarily be…
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A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing functionality. Here, we show that some of these transistors unfortunately may not have sufficient voltage and current gains for signal processing. This is primarily because of a large output ac conductance and poor isolation between input and output. The latter also hinders unidirectional propagation of logic signal from the input of a logic gate to the output. Other versions of these transistors appear to have better gain and isolation, but not better than those of a conventional transistor. Therefore, these devices may not improve state-of-the-art signal processing capability, although they may provide additional functionality by offering non-volatile storage. They may also have niche applications in non-linear circuits.
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Submitted 12 October, 2004;
originally announced October 2004.
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Proposal for a spintronic femto-Tesla magnetic field sensor
Authors:
S. Bandyopadhyay,
M. Cahay
Abstract:
We propose a spintronic magnetic field sensor, fashioned out of quantum wires, which may be capable of detecting very weak magnetic fields with a sensitivity of ~ 1 femto-Tesla per root Hertz at a temperature of 4.2 K and ~ 80 femto-Tesla per root Hertz at room temperature. Such sensors have applications in magnetometry, quantum computing, solid state nuclear magnetic resonance, magneto-encephal…
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We propose a spintronic magnetic field sensor, fashioned out of quantum wires, which may be capable of detecting very weak magnetic fields with a sensitivity of ~ 1 femto-Tesla per root Hertz at a temperature of 4.2 K and ~ 80 femto-Tesla per root Hertz at room temperature. Such sensors have applications in magnetometry, quantum computing, solid state nuclear magnetic resonance, magneto-encephalography, mine detection, ground incursion detection and anti-submarine warfare.
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Submitted 8 December, 2004; v1 submitted 6 August, 2004;
originally announced August 2004.
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A spin field effect transistor for low leakage current
Authors:
S. Bandyopadhyay,
M. Cahay
Abstract:
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the ``off''-state, resulting in significant standby power dissipation.…
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In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities. The randomized spins lead to a large leakage current when the transistor is in the ``off''-state, resulting in significant standby power dissipation. We can counter this effect of the magnetic field by engineering the Dresselhaus spin-orbit interaction in the channel with a backgate. For realistic device parameters, a nearly perfect cancellation is possible, which should result in a low leakage current.
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Submitted 9 September, 2004; v1 submitted 7 July, 2004;
originally announced July 2004.
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Can spintronic field effect transistors compete with their electronic counterparts?
Authors:
S. Bandyopadhyay,
M. Cahay
Abstract:
Current interest in spintronics is largely motivated by a belief that spin based devices (e.g. spin field effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally untrue. Unless materials with extremely strong spin orbit interaction can be developed, the spintronic devices will not measure up to their electronic cousins. We…
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Current interest in spintronics is largely motivated by a belief that spin based devices (e.g. spin field effect transistors) will be faster and consume less power than their electronic counterparts. Here we show that this is generally untrue. Unless materials with extremely strong spin orbit interaction can be developed, the spintronic devices will not measure up to their electronic cousins. We also show that some recently proposed modifications of the original spin field effect transistor concept of Datta and Das [Appl. Phys. Lett., Vol. 56, 665 (1990)] actually lead to worse performance than the original construct.
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Submitted 1 July, 2004; v1 submitted 14 April, 2004;
originally announced April 2004.
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An alternate spintronic analog of the electro-optic modulator
Authors:
S. Bandyopadhyay,
M. Cahay
Abstract:
There is significant current interest in spintronic devices fashioned after a spin analog of the electro-optic modulator proposed by Datta and Das [Appl. Phys. Lett., \underline{56}, 665 (1990)]. In their modulator, the ``modulation'' of the spin polarized current is carried out by tuning the Rashba spin-orbit interaction with a gate voltage. Here, we propose an analogous modulator where the mod…
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There is significant current interest in spintronic devices fashioned after a spin analog of the electro-optic modulator proposed by Datta and Das [Appl. Phys. Lett., \underline{56}, 665 (1990)]. In their modulator, the ``modulation'' of the spin polarized current is carried out by tuning the Rashba spin-orbit interaction with a gate voltage. Here, we propose an analogous modulator where the modulation is carried out by tuning the Dresselhaus spin orbit interaction instead. The advantage of the latter is that there is no magnetic field in the channel unlike in the case of the Datta-Das device. This can considerably enhance modulator performance.
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Submitted 14 April, 2004;
originally announced April 2004.
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Issues pertaining to D'yakonov-Perel' spin relaxation in quantum wire channels
Authors:
S. Pramanik,
S. Bandyopadhyay,
M. Cahay
Abstract:
We elucidate the origin and nature of the D'yakonov-Perel' spin relaxation in a quantum wire structure, showing (analytically) that there are three necessary conditions for it to exist: (i) transport must be multi-channeled, (ii) there must be a Rashba spin orbit interaction in the wire, and (iii) there must also be a Dresselhaus spin orbit interaction. Therefore, the only effective way to compl…
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We elucidate the origin and nature of the D'yakonov-Perel' spin relaxation in a quantum wire structure, showing (analytically) that there are three necessary conditions for it to exist: (i) transport must be multi-channeled, (ii) there must be a Rashba spin orbit interaction in the wire, and (iii) there must also be a Dresselhaus spin orbit interaction. Therefore, the only effective way to completely eliminate the D'yakonov-Perel' relaxation in compound semiconductor channels with structural and bulk inversion asymmetry is to ensure strictly single channeled transport. In view of that, recent proposals in the literature that advocate using multi-channeled quantum wires for spin transistors appear ill-advised.
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Submitted 29 February, 2004;
originally announced March 2004.
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Decay of spin polarized hot carrier current in a quasi one-dimensional spin valve structure
Authors:
S. Pramanik,
S. Bandyopadhyay,
M. Cahay
Abstract:
We study the spatial decay of spin polarized hot carrier current in a spin-valve structure consisting of a semiconductor quantum wire flanked by half-metallic ferromagnetic contacts. The current decays because of D'yakonov-Perel' spin relaxation in the semiconductor caused by Rashba spin orbit interaction. The associated relaxation length is found to decrease with increasing lattice temperature…
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We study the spatial decay of spin polarized hot carrier current in a spin-valve structure consisting of a semiconductor quantum wire flanked by half-metallic ferromagnetic contacts. The current decays because of D'yakonov-Perel' spin relaxation in the semiconductor caused by Rashba spin orbit interaction. The associated relaxation length is found to decrease with increasing lattice temperature (in the range 30-77 K) and exhibit a non-monotonic dependence on the electric field driving the current. The relaxation lengths are several tens of microns which are at least an order of magnitude larger than what has been theoretically calculated for two-dimensional structures at comparable temperatures, Rashba interaction strengths and electric fields. This improvement is a consequence of one-dimensional carrier confinement that does not necessarily suppress carrier scattering, but nevertheless suppresses D'yakonov-Perel' spin relaxation.
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Submitted 10 October, 2003;
originally announced October 2003.
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Magnetoelectric subbands and eigenstates in the presence of Rashba and Drresselhaus spin orbit interactions in a quantum wire
Authors:
S. Bandyopadhyay,
S. Pramanik,
M. Cahay
Abstract:
We derive the eigenenergies and eigenstates of electrons in a quantum wire subjected to an external magnetic field. These are calculated in the presence of spin orbit interactions arising from the Rashba (structural inversion asymmetry) and Dresselhaus (bulk inversion asymmetry) effects. We consider three cases: the external magnetic field is oriented (i) along the axis of the wire, (ii) perpend…
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We derive the eigenenergies and eigenstates of electrons in a quantum wire subjected to an external magnetic field. These are calculated in the presence of spin orbit interactions arising from the Rashba (structural inversion asymmetry) and Dresselhaus (bulk inversion asymmetry) effects. We consider three cases: the external magnetic field is oriented (i) along the axis of the wire, (ii) perpendicular to the axis but parallel to the electric field associated with structural inversion asymmetry (Rashba effect), and (iii) perpendicular to the axis as well as the electric field. In all cases, the dispersions of the eigenenergies are non-parabolic and the subbands do not have a fixed spin quantization axis (meaning that the spin polarization of the electron is wavevector dependent). Except in the second case, the dispersion diagrams are also, in general, asymmetric about the energy axis.
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Submitted 6 October, 2003;
originally announced October 2003.
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Effect of Disorder on the Conductance of Spin Field Effect Transistors (SPINFET)
Authors:
M. Cahay,
S. Bandyopadhyay
Abstract:
We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the amplitude and phase of the transistor's conductance oscillations to the location of a single impurity in the channel is reminiscent of the phenomenon of universal…
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We show that the conductance of Spin Field Effect Transistors (SPINFET) [Datta and Das, Appl. Phys. Lett., Vol. 56, 665 (1990)] is affected by a single (non-magnetic) impurity in the transistor's channel. The extreme sensitivity of the amplitude and phase of the transistor's conductance oscillations to the location of a single impurity in the channel is reminiscent of the phenomenon of universal conductance fluctuations in mesoscopic samples and is extremely problematic as far as device implementation is concerned.
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Submitted 11 June, 2003;
originally announced June 2003.
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Spin transport in nanowires
Authors:
S. Pramanik,
S. bandyopadhyay,
M. Cahay
Abstract:
We study high-field spin transport of electrons in a quasi one-dimensional channel of a $GaAs$ gate controlled spin interferometer (SPINFET) using a semiclassical formalism (spin density matrix evolution coupled with Boltzmann transport equation). Spin dephasing (or depolarization) is predominantly caused by D'yakonov-Perel' relaxation associated with momentum dependent spin orbit coupling effec…
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We study high-field spin transport of electrons in a quasi one-dimensional channel of a $GaAs$ gate controlled spin interferometer (SPINFET) using a semiclassical formalism (spin density matrix evolution coupled with Boltzmann transport equation). Spin dephasing (or depolarization) is predominantly caused by D'yakonov-Perel' relaxation associated with momentum dependent spin orbit coupling effects that arise due to bulk inversion asymmetry (Dresselhaus spin orbit coupling) and structural inversion asymmetry (Rashba spin orbit coupling). Spin dephasing length in a one dimensional channel has been found to be an order of magnitude higher than that in a two dimensional channel. This study confirms that the ideal configuration for a SPINFET is one where the ferromagnetic source and drain contacts are magnetized along the axis of the channel. The spin dephasing length in this case is about 22.5 microns at lattice temperature of 30K and 10 microns at lattice temperature of 77 K for an electric field of 2 kV/cm. Spin dephasing length has been found to be weakly dependent on the driving electric field and strongly dependent on the lattice temperature.
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Submitted 3 June, 2003;
originally announced June 2003.
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Phase coherent quantum mechanical spin tranport in a weakly disordered quasi one-dimensional channel
Authors:
M. Cahay,
S. Bandyopadhyay
Abstract:
A transfer matrix technique is used to model phase coherent spin transport in the weakly disordered quasi one-dimensional channel of a gate-controlled electron spin interferometer [Datta and Das, Appl. Phys. Lett., 56, 665 (1990)]. It includes the effects of an axial magnetic field in the channel of the interferometer (caused by the ferromagnetic contacts), a Rashba spin-orbit interaction, and e…
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A transfer matrix technique is used to model phase coherent spin transport in the weakly disordered quasi one-dimensional channel of a gate-controlled electron spin interferometer [Datta and Das, Appl. Phys. Lett., 56, 665 (1990)]. It includes the effects of an axial magnetic field in the channel of the interferometer (caused by the ferromagnetic contacts), a Rashba spin-orbit interaction, and elastic (non-magnetic) impurity scattering. We show that in the presence of the axial magnetic field, non-magnetic impurities can cause spin relaxation in a manner similar to the Elliott-Yafet mechanism. The amplitudes and phases of the conductance oscillations of the interferometer, and the degree of spin-conductance polarization, are found to be quite sensitive to the height of the interface barrier at the contact, as well as the strength, locations and nature (attractive or repulsive) of just a few elastic non-magnetic impurities in the channel. This can seriously hinder practical applications of spin interferometers.
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Submitted 27 May, 2003;
originally announced May 2003.
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The Effect of Ramsauer Type Transmission Resonances on the Conductance Modulation of Spin Interferometers
Authors:
M. Cahay,
S. Bandyopadhyay
Abstract:
We use a mean field approach to study the conductance modulation of gate controlled semiconductor spin interferometers based on the Rashba spin-orbit coupling effect. The conductance modulation is found to be mostly due to Ramsauer type transmission resonances rather than the Rashba effect in typical structures. This is because of significant reflections at the interferometer's contacts due to l…
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We use a mean field approach to study the conductance modulation of gate controlled semiconductor spin interferometers based on the Rashba spin-orbit coupling effect. The conductance modulation is found to be mostly due to Ramsauer type transmission resonances rather than the Rashba effect in typical structures. This is because of significant reflections at the interferometer's contacts due to large potential barriers and effective mass mismatch between the contact material and the semiconductor. Thus, unless particular care is taken to eliminate these reflections, any observed conductance modulation of spin interferometers may have its origin in the Ramsauer resonances (which is unrelated to spin) rather than the Rashba effect.
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Submitted 6 January, 2003;
originally announced January 2003.
