Atomic-scale investigation of $γ$-Ga$_2$O$_3$ deposited on MgAl$_2$O$_4$ and its relationship with $β$-Ga$_2$O$_3$
Authors:
J. Tang,
K. Jiang,
C. Xu,
M. J. Cabral,
K. Xiao,
L. M. Porter,
R. F. Davis
Abstract:
Nominally phase-pure $γ$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C exhibited either poor crystallization or an amorphous structure; the film grown at 500 $^{\circ}$C contained both $β$-$Ga_2O_3$ and $γ$-$Ga_2O_3$. A nominally phase-pur…
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Nominally phase-pure $γ$-$Ga_2O_3$ was deposited on (100) $MgAl_2O_4$ within a narrow temperature window centered at $\sim$470 $^{\circ}$C using metal-organic chemical vapor deposition (MOCVD). The film deposited at 440 $^{\circ}$C exhibited either poor crystallization or an amorphous structure; the film grown at 500 $^{\circ}$C contained both $β$-$Ga_2O_3$ and $γ$-$Ga_2O_3$. A nominally phase-pure $β$-$Ga_2O_3$ film was obtained at 530 $^{\circ}$C. Atomic-resolution scanning transmission electron microscopy (STEM) investigations of the $γ$-$Ga_2O_3$ film grown at 470 $^{\circ}$C revealed a high density of antiphase boundaries. A planar defect model developed for $γ$-$Al_2O_3$ was extended to explain the stacking sequences of the Ga sublattice observed in the STEM images of $γ$-$Ga_2O_3$. The presence of the 180$^{\circ}$ rotational domains and 90$^{\circ}$ rotational domains of $β$-$Ga_2O_3$ inclusions within the $γ$-$Ga_2O_3$ matrix is discussed within the context of a comprehensive investigation of the epitaxial relationship between those two phases in the as-grown film at 470 $^{\circ}$C and the same film annealed at 600 $^{\circ}$C. The results led to the hypotheses that (i) incorporation of certain dopants including Si, Ge, Sn, Mg, Al, and Sc, into $β$-$Ga_2O_3$, locally stabilizes the "$γ$-phase" and (ii) the site preference(s) for these dopants promotes the formation of the "$γ$-phase" and/or $γ$-$Ga_2O_3$ solid solutions. However, in the absence of such dopants, pure $γ$-$Ga_2O_3$ remains the least stable $Ga_2O_3$ polymorph, as indicated by its very narrow growth window, lower growth temperatures relative to other $Ga_2O_3$ polymorphs, and the largest calculated difference in Helmholtz free energy per formula unit between $γ$-$Ga_2O_3$ and $β$-$Ga_2O_3$ than all other polymorphs.
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Submitted 20 October, 2023; v1 submitted 19 October, 2023;
originally announced October 2023.
Decoding the complexities of lead-based relaxor ferroelectrics
Authors:
Abinash Kumar,
Jonathon N. Baker,
Preston C. Bowes,
Matthew J. Cabral,
Shujun Zhang,
Elizabeth Dickey,
Douglas L. Irving,
James M. LeBeau
Abstract:
Relaxor ferroelectrics, which can exhibit exceptional electromechanical coupling are some of the most important functional materials with applications ranging from ultrasound imaging to actuators and sensors in microelectromechanical devices. Since their discovery nearly 60 years ago, the complexity of nanoscale chemical and structural heterogeneity in these systems has made understanding the orig…
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Relaxor ferroelectrics, which can exhibit exceptional electromechanical coupling are some of the most important functional materials with applications ranging from ultrasound imaging to actuators and sensors in microelectromechanical devices. Since their discovery nearly 60 years ago, the complexity of nanoscale chemical and structural heterogeneity in these systems has made understanding the origins of their unique electromechanical properties a seemingly intractable problem. A full accounting of the mechanisms that connect local structure and chemistry with nanoscale fluctuations in polarization has, however, remained a need and a challenge. Here, we employ aberration-corrected scanning transmission electron microscopy (STEM) to quantify various types of nanoscale heterogeneity and their connection to local polarization in the prototypical relaxor ferroelectric system Pb(Mg$_{1/3}$Nb$_{2/3}$)O$_{3}$-PbTiO3 (PMN-PT). We identify three main contributions that each depend on Ti content: chemical order, oxygen octahedral tilt, and oxygen octahedral distortion. These heterogeneities are found to be spatially correlated with low angle polar domain walls, indicating their role in disrupting long-range polarization. Specifically, these heterogeneities lead to nanoscale domain formation and the relaxor response. We further locate nanoscale regions of monoclinic distortion that correlate directly with Ti content and the electromechanical performance. Through this approach, the elusive connection between chemical heterogeneity, structural heterogeneity and local polarization is revealed, and the results validate models needed to develop the next generation of relaxor ferroelectric materials.
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Submitted 13 November, 2019;
originally announced November 2019.
