Superconducting properties of corner-shaped Al microstrips
Authors:
O. -A. Adami,
D. Cerbu,
D. Cabosart,
M. Motta,
J. Cuppens,
W. A. Ortiz,
V. V. Moshchalkov,
B. Hackens,
R. Delamare,
J. Van de Vondel,
A. V. Silhanek
Abstract:
The electrical transport properties of corner-shaped Al superconducting microstrips have been investigated. We demonstrate that the sharp turns lead to asymmetric vortex dynamics, allowing for easier penetration from the inner concave angle than from the outer convex angle. This effect is evidenced by a strong rectification of the voltage signal otherwise absent in straight superconducting strips.…
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The electrical transport properties of corner-shaped Al superconducting microstrips have been investigated. We demonstrate that the sharp turns lead to asymmetric vortex dynamics, allowing for easier penetration from the inner concave angle than from the outer convex angle. This effect is evidenced by a strong rectification of the voltage signal otherwise absent in straight superconducting strips. At low magnetic fields, an enhancement of the critical current with increasing magnetic field is observed for a particular combination of field and current polarity, confirming a recently theoretically predicted competing interplay of superconducting screening currents and applied currents at the inner side of the turn.
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Submitted 17 January, 2013; v1 submitted 11 January, 2013;
originally announced January 2013.
Localized state and charge transfer in nitrogen-doped graphene
Authors:
Frederic Joucken,
Yann Tison,
Jerome Lagoute,
Jacques Dumont,
Damien Cabosart,
Bing Zheng,
Vincent Repain,
Cyril Chacon,
Yann Girard,
Andres Rafael Botello-Mendez,
Sylvie Rousset,
Robert Sporken,
Jean-Christophe Charlier,
Luc Henrard
Abstract:
Nitrogen-doped epitaxial graphene grown on SiC(000?1) was prepared by exposing the surface to an atomic nitrogen flux. Using Scanning Tunneling Microscopy (STM) and Spectroscopy (STS), supported by Density Functional Theory (DFT) calculations, the simple substitution of carbon by nitrogen atoms has been identified as the most common doping configuration. High-resolution images reveal a reduction o…
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Nitrogen-doped epitaxial graphene grown on SiC(000?1) was prepared by exposing the surface to an atomic nitrogen flux. Using Scanning Tunneling Microscopy (STM) and Spectroscopy (STS), supported by Density Functional Theory (DFT) calculations, the simple substitution of carbon by nitrogen atoms has been identified as the most common doping configuration. High-resolution images reveal a reduction of local charge density on top of the nitrogen atoms, indicating a charge transfer to the neighboring carbon atoms. For the first time, local STS spectra clearly evidenced the energy levels associated with the chemical doping by nitrogen, localized in the conduction band. Various other nitrogen-related defects have been observed. The bias dependence of their topographic signatures demonstrates the presence of structural configurations more complex than substitution as well as hole-doping.
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Submitted 16 April, 2012;
originally announced April 2012.
