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Electron mobility in AlN from first principles
Authors:
Amanda Wang,
Nick Pant,
Woncheol Lee,
Jie-Cheng Chen,
Feliciano Giustino,
Emmanouil Kioupakis
Abstract:
Aluminum nitride is a promising ultra-wide band gap semiconductor for optoelectronics and power electronics. However, its practical applications have been limited by challenges with doping and achieving high electrical conductivity. Recent advances in crystal quality and defect control have led to improvements in experimentally measured mobilities. In this work, we apply first-principles calculati…
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Aluminum nitride is a promising ultra-wide band gap semiconductor for optoelectronics and power electronics. However, its practical applications have been limited by challenges with doping and achieving high electrical conductivity. Recent advances in crystal quality and defect control have led to improvements in experimentally measured mobilities. In this work, we apply first-principles calculations to determine the upper limits of the electron mobility in AlN as a function of temperature, doping, and crystallographic orientation. We account for the combined effects of electron scattering by phonons and ionized impurity to model doped systems, and examine both full and partial ionization conditions. Our results show that the piezoelectric interaction from the long-range component of the acoustic modes is the dominant source of electron-phonon scattering at room temperature. Ionized-impurity scattering starts to dominate scattering at dopant concentrations above $10^{16}$ cm$^{-3}$, reducing the mobility by more than an order of magnitude in the high doping regime. Our calculated Hall mobility values are in good agreement with experimental data for samples with comparable dopant concentrations. We also find that electron mobilities as high as $956$ cm$^2$/V$\cdot$s could be achievable at lower dopant concentrations.
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Submitted 10 June, 2025;
originally announced June 2025.
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Ferromagnetic Two-dimensional Electron Gases with Magnetic Doping and Proximity Effects
Authors:
Zixin Fan,
Jiale Chen,
Qiangtao Sui,
Haoming Ling,
Zihao Wang,
Lingyuan Kong,
Dingyi Li,
Fang Yang,
Run Zhao,
Hanghui Chen,
Pan Chen,
Yan Liang,
Jiandi Zhang
Abstract:
The advent of magnetic two-dimensional electron gases (2DEGs) at oxide interfaces has provided new opportunities in the field of spintronics. The enhancement of magnetism in 2DEGs at oxide interfaces continues to be a significant challenge, as exemplified by the relatively weak magnetism observed in the classical LaAlO3/SrTiO3 interface. Here, we present ferromagnetic (FM) 2DEGs at the interface f…
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The advent of magnetic two-dimensional electron gases (2DEGs) at oxide interfaces has provided new opportunities in the field of spintronics. The enhancement of magnetism in 2DEGs at oxide interfaces continues to be a significant challenge, as exemplified by the relatively weak magnetism observed in the classical LaAlO3/SrTiO3 interface. Here, we present ferromagnetic (FM) 2DEGs at the interface fabricated between the FM insulator EuTiO3 (ETO) and the strong spin-orbit coupled (SOC) perovskite insulator KTaO3 (KTO). With the combined effects of magnetic atom doping and magnetic proximity from ETO films, the coercive field of 2DEGs can be significantly enhanced. Magnetoresistance (MR) curve with a high coercive field of 1000 Oe has been observed, in conjunction with a temperature-dependent unambiguous hysteresis loop in the anomalous Hall effect (AHE). Furthermore, within the 2DEGs, we have identified a synergetic interplay between magnetic scattering and the weak antilocalization (WAL) effect on transport. This study provides fresh insights into the formation of FM 2DEGs at ETO/KTO interfaces, and introduce an innovative pathway for creating high-performance magnetic 2DEGs at oxide interfaces.
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Submitted 10 June, 2025;
originally announced June 2025.
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Electrically tunable quantum interference of atomic spins on surfaces
Authors:
Hao Wang,
Jing Chen,
Peng Fan,
Yelko del Castillo,
Alejandro Ferrón,
Lili Jiang,
Zilong Wu,
Shijie Li,
Hong-Jun Gao,
Heng Fan,
Joaquín Fernández-Rossier,
Kai Yang
Abstract:
Controlling quantum interference near avoided energy-level crossings is crucial for fast and reliable coherent manipulation in quantum information processing. However, achieving tunable quantum interference in atomically-precise engineered structures remains challenging. Here, we demonstrate electrical control of quantum interference using atomic spins on an insulating film in a scanning tunneling…
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Controlling quantum interference near avoided energy-level crossings is crucial for fast and reliable coherent manipulation in quantum information processing. However, achieving tunable quantum interference in atomically-precise engineered structures remains challenging. Here, we demonstrate electrical control of quantum interference using atomic spins on an insulating film in a scanning tunneling microscope. Using bias voltages applied across the tunnel junction, we modulate the atomically-confined magnetic interaction between the probe tip and surface atoms with a strong electric field, and drive the spin state rapidly through the energy-level anticrossing. This all-electrical manipulation allows us to achieve Landau-Zener-Stückelberg-Majorana (LZSM) interferometry on both single spins and pairs of interacting spins. The LZSM pattern exhibits multiphoton resonances, and its asymmetry suggests that the spin dynamics is influenced by spin-transfer torque of tunneling electrons. Multi-level LZSM spectra measured on coupled spins with tunable interactions show distinct interference patterns depending on their many-body energy landscapes. These results open new avenues for all-electrical quantum manipulation in spin-based quantum processors in the strongly driven regime.
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Submitted 1 June, 2025;
originally announced June 2025.
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Electrical Detection of Single-Domain Néel Vector Reorientation across the Spin-Flop Transition in Cr2O3 Crystals
Authors:
Wei-Cheng Liao,
Haoyu Liu,
Weilun Tan,
Josiah Keagy,
Jia-mou Chen,
Jing Shi
Abstract:
Electrical transport measurements in heterostructures of antiferromagnetic Cr2O3 bulk crystals and a thin Pt layer exhibit sharp responses as the Néel vector of the Cr2O3 undergoes the spin-flop transition. This abrupt change can arise from several distinct mechanisms including magnetostriction, proximity-induced anomalous Hall, spin Hall anomalous Hall, and spin Hall planar Hall effects. While la…
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Electrical transport measurements in heterostructures of antiferromagnetic Cr2O3 bulk crystals and a thin Pt layer exhibit sharp responses as the Néel vector of the Cr2O3 undergoes the spin-flop transition. This abrupt change can arise from several distinct mechanisms including magnetostriction, proximity-induced anomalous Hall, spin Hall anomalous Hall, and spin Hall planar Hall effects. While large Pt devices sensing multiple up/down domains can produce indistinguishable Hall signal jumps due to different initial Néel vector orientations, smaller Pt devices that sense single domains isolate the proximity-induced Hall signals. This allows direct electrical detection of Néel vector reorientation across the spin-flop transition in single domain regions. Furthermore, the single-domain state can be prepared by magnetic field cooling or magnetoelectric cooling. We demonstrate a method to control and characterize almost the three-dimensional orientation of single-domain Néel vectors by exploiting Hall measurements and cooling techniques, crucial for future antiferromagnetic spintronic applications.
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Submitted 29 May, 2025;
originally announced May 2025.
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Thermal Conductivity above 2000 W/m.K in Boron Arsenide by Nanosecond Transducer-less Time-Domain Thermoreflectance
Authors:
Hong Zhong,
Ying Peng,
Feng Lin,
Ange Benise Niyikiza,
Fengjiao Pan,
Chengzhen Qin,
Jinghong Chen,
Viktor G. Hadjiev,
Liangzi Deng,
Zhifeng Ren,
Jiming Bao
Abstract:
Cubic boron arsenide (c-BAs) has been theoretically predicted to exhibit thermal conductivity \k{appa} comparable to that of diamond, yet experimental measurements have plateaued at ~1300W/mK. We report room-temperature \k{appa} exceeding 2000W/mK in c-BAs, on par with single-crystal diamond. This finding is enabled by high-quality single crystals and a newly developed nanosecond, transducer-less…
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Cubic boron arsenide (c-BAs) has been theoretically predicted to exhibit thermal conductivity \k{appa} comparable to that of diamond, yet experimental measurements have plateaued at ~1300W/mK. We report room-temperature \k{appa} exceeding 2000W/mK in c-BAs, on par with single-crystal diamond. This finding is enabled by high-quality single crystals and a newly developed nanosecond, transducer-less time-domain thermoreflectance technique that allows spatial mapping of \k{appa} without metal transducers. Thermal conductivity correlates with crystal quality, as evidenced by stronger photoluminescence and longer photoluminescence lifetimes. However, the observed nanosecond lifetimes remain shorter than expected for an indirect bandgap semiconductor, suggesting room for further crystal quality improvement and higher \k{appa}. These results challenge current theoretical models and highlight c-BAs as a promising material for next-generation electronics.
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Submitted 23 May, 2025;
originally announced May 2025.
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Disorder-Driven Exceptional Points and Concurrent Topological Phase Transitions in Non-Hermitian Lattice
Authors:
Xiaoyu Cheng,
Tiantao Qu,
Yaqing Yang,
Lei Zhang,
Jun Chen
Abstract:
Exceptional point (EP) and topological phase transition (TPT) in non-Hermitian systems have recently garnered significant attention owing to their fundamental importance and potential applications in sensing and topological devices. Beyond the EP induced by non-reciprocal hopping, we show that random disorder can also drive the valence and conduction bands across EPs, even twice in the non-Hermiti…
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Exceptional point (EP) and topological phase transition (TPT) in non-Hermitian systems have recently garnered significant attention owing to their fundamental importance and potential applications in sensing and topological devices. Beyond the EP induced by non-reciprocal hopping, we show that random disorder can also drive the valence and conduction bands across EPs, even twice in the non-Hermitian regime. Remarkably, a TPT can occur concurrently with an EP as disorder strength increases. These disorder-driven EPs and concurrent TPTs are well captured by effective medium theory. The analysis reveals that their emergence results from the interplay between disorder-induced energy level renormalization and non-reciprocal hopping-induced inter-level coupling, which fundamentally restructures the spectral properties of the system. The phase diagram in the parameter space of non-reciprocal hopping and disorder strength identifies robust EP lines. Interestingly, two EP lines can emerge from the TPT point in the Hermitian limit. As non-reciprocal hopping increases, these lines split, with one aligning the TPT, leading to distinct disorder-induced EPs. Our results uncover a robust, disorder-driven mechanism for generating EPs and concurrent TPTs, offering a new direction for exploring non-Hermitian topological matter.
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Submitted 19 May, 2025;
originally announced May 2025.
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Crescent domain-wall pairs in anisotropic two-dimensional MnOI monolayer with fast dynamics
Authors:
Yijun Yang,
Zhong Shen,
Jun Chen,
Shuai Dong,
Xiaoyan Yao
Abstract:
The controllable and efficient manipulation is always a key challenge for the application of topological magnetic textures in spintronic devices. By first-principles calculations and atomistic simulations, the present work reveals an exotic domain-wall pair in crescent shape, which possesses topology in one dimension and particle-like robustness in two dimensions. Its antiferromagnetic version is…
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The controllable and efficient manipulation is always a key challenge for the application of topological magnetic textures in spintronic devices. By first-principles calculations and atomistic simulations, the present work reveals an exotic domain-wall pair in crescent shape, which possesses topology in one dimension and particle-like robustness in two dimensions. Its antiferromagnetic version is observed in the two-dimensional MnOI monolayer with a strong anisotropy, and the ferromagnetic version exists under an appropriate strain. Both of them can be driven efficiently by current to move in a straight line along a certain direction. Hereby, another possible path is provided to realize the application of topological magnetic texture in the next-generation high-speed spintronic devices.
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Submitted 15 May, 2025;
originally announced May 2025.
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Current-induced Dynamics of Bloch Domain-wall Bimerons
Authors:
Jiwen Chen,
Laichuan Shen,
Yan Zhou,
Oleg A. Tretiakov,
Xiaoguang Li
Abstract:
Domain-wall bimerons are composite topological structures formed by embedding bimerons within domain walls in ferromagnets with in-plane anisotropy. These hybrid textures have recently attracted significant attention due to their promise for racetrack memory applications. In this work, we systematically investigate the current-driven dynamics of single domain-wall bimerons and bimeron chains under…
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Domain-wall bimerons are composite topological structures formed by embedding bimerons within domain walls in ferromagnets with in-plane anisotropy. These hybrid textures have recently attracted significant attention due to their promise for racetrack memory applications. In this work, we systematically investigate the current-driven dynamics of single domain-wall bimerons and bimeron chains under spin-transfer torque (STT) and spin-orbit torque (SOT). We show that when the spin current is injected or polarized perpendicular to the domain wall, the bimeron Hall effect facilitates efficient motion along the wall. In contrast, spin currents injected or polarized parallel to the wall suppress transverse motion, leading to a significant reduction in the bimeron Hall angle. This anisotropic response is observed for both STT and SOT driving mechanisms. Furthermore, we find that increasing the number of bimerons within a domain wall diminishes their collective mobility. These results provide key insights into domain-wall bimeron dynamics and offer guidance for their integration into bimeron-based spintronic devices.
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Submitted 1 May, 2025;
originally announced May 2025.
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Effect of Magnetic Anisotropy and Gradient-Induced Dzyaloshinskii-Moriya Interaction on the Formation of Magnetic Skyrmions
Authors:
Adam Erickson,
Qihan Zhang,
Hamed Vakili,
Edward Schwartz,
Suvechhya Lamichhane,
Chaozhong Li,
Boyu Li,
Dongsheng Song,
Guozhi Chai,
Sy-Hwang Liou,
Alexey A. Kovalev,
Jingsheng Chen,
Abdelghani Laraoui
Abstract:
Topological spin textures (e.g. skyrmions) can be stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) in the magnetic multilayer, which has been intensively studied. Recently, Bloch-type magnetic skyrmions stabilized by composition gradient-induced DMI (g-DMI) have been observed in 10-nm thick CoPt single layer. However, magnetic anisotropy in gradient-composition engineered CoPt (g-…
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Topological spin textures (e.g. skyrmions) can be stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) in the magnetic multilayer, which has been intensively studied. Recently, Bloch-type magnetic skyrmions stabilized by composition gradient-induced DMI (g-DMI) have been observed in 10-nm thick CoPt single layer. However, magnetic anisotropy in gradient-composition engineered CoPt (g-CoPt) films is highly sensitive to both the relative Co/Pt composition and the film thickness, leading to a complex interplay with g-DMI. The stability of skyrmions under the combined influence of magnetic anisotropy and g-DMI is crucial yet remains poorly understood. Here, we conduct a systematic study on the characteristics of magnetic skyrmions as a function of gradient polarity and effective gradient strength (defined as gradient/thickness) in g-CoPt single layers (thickness of 10-30 nm) using magnetic force microscopy (MFM), bulk magnetometry, and topological Hall effect measurements. Brillouin light scattering confirms that both the sign and magnitude of g-DMI depend on the polarity and amplitude of the composition gradient in g-CoPt films. MFM reveals that skyrmion size and density vary with g-CoPt film thickness, gradient polarity, and applied magnetic field. An increased skyrmion density is observed in samples exhibiting higher magnetic anisotropy, in agreement with micromagnetic simulations and energy barrier calculations.
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Submitted 30 April, 2025;
originally announced April 2025.
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Higgs mode in two-dimensional coherent spectroscopy of weak-coupling antiferromagnets
Authors:
Jiyu Chen,
Naoto Tsuji,
Philipp Werner
Abstract:
Two-dimensional coherent spectroscopy (2DCS) provides insights into the nonlinear response of correlated lattice systems. We simulate multipulse excitations in the Hubbard model using nonequilibrium dynamical mean-field theory to extract the 2DCS signal of weak-coupling antiferromagnets with and without disorder. By comparing calculations with static and dynamic Hartree terms, and analyzing the wa…
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Two-dimensional coherent spectroscopy (2DCS) provides insights into the nonlinear response of correlated lattice systems. We simulate multipulse excitations in the Hubbard model using nonequilibrium dynamical mean-field theory to extract the 2DCS signal of weak-coupling antiferromagnets with and without disorder. By comparing calculations with static and dynamic Hartree terms, and analyzing the waiting-time dependence of the signal, we identify the contribution of the collective amplitude (Higgs) mode to the spectroscopic features and the relevant underlying processes. With broadband pulses, the rephasing and nonrephasing peaks at the gap energy are found to be of predominant Higgs character, while the two-quantum signals originate from single-particle excitations. Using narrow-band pulses, we also demonstrate a strong enhancement of these Higgs-related signals at a pulse frequency of half the gap size.
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Submitted 30 April, 2025;
originally announced April 2025.
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Ultrafast Electronic Structure Engineering in 1$T$-TaS$_2$: Role of Doping and Amplitude Mode Dynamics
Authors:
J. Jayabalan,
Jiyu Chen,
Laura Pätzold,
Francesco Petocchi,
Florian K. Diekmann,
Negar Najafianpour,
Ping Zhou,
Walter Schnelle,
Gesa-R. Siemann,
Philip Hofmann,
Kai Roßnagel,
Tim Wehling,
Martin Eckstein,
Philipp Werner,
Uwe Bovensiepen
Abstract:
In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the electronic structure to optical excitations to reveal the effect of chemical electron doping on this complex interplay. Transient changes in pristine and electron…
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In strongly correlated transition metal dichalcogenides, an intricate interplay of polaronic distortions, stacking arrangement, and electronic correlations determines the nature of the insulating state. Here, we study the response of the electronic structure to optical excitations to reveal the effect of chemical electron doping on this complex interplay. Transient changes in pristine and electron-doped 1$T$ -TaS$_2$ are measured by femtosecond time-resolved photoelectron spectroscopy and compared to theoretical modeling based on non-equilibrium dynamical mean-field theory and density functional theory. The fine changes in the oscillatory signal of the charge density wave amplitude mode indicate phase-dependent modifications in the Coulomb interaction and the hopping. Furthermore, we find an enhanced fraction of monolayers in the doped system. Our work demonstrates how the combination of time-resolved spectroscopy and advanced theoretical modeling provides insights into the physics of correlated transition metal dichalcogenides.
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Submitted 28 April, 2025;
originally announced April 2025.
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Semimetals without correspondence between the topological charge of nodal line/surface and Fermi arc
Authors:
Xue-Min Yang,
Jiang-Shan Chen,
Ying Chen,
Yu-Hang Qin,
Hong Wu
Abstract:
It is generally believed that there is a correspondence between the topological charge of nodal points or lines and the presence of Fermi arcs. Using a $\mathcal{P}\mathcal{T}$-invariant system as an example, we demonstrate that this general belief is no longer valid. When two charged nodal lines or surfaces touch, the topological charge {dissipates without gap opening}, yet the surfaces or hinge…
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It is generally believed that there is a correspondence between the topological charge of nodal points or lines and the presence of Fermi arcs. Using a $\mathcal{P}\mathcal{T}$-invariant system as an example, we demonstrate that this general belief is no longer valid. When two charged nodal lines or surfaces touch, the topological charge {dissipates without gap opening}, yet the surfaces or hinge Fermi arcs can remain preserved. It is found that both static and Floquet semimetals can exhibit Fermi arcs, even when the nodal lines or surfaces do not carry a $Z_2$ charge from second Stiefel-Whitney class.
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Submitted 23 April, 2025;
originally announced April 2025.
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Designing Optimal Distorted-Octahedra Superlattices for Strong Topological Hall Effect
Authors:
Yiyan Fan,
Qinghua Zhang,
Jingdi Lu,
Chuanrui Huo,
Tianyang Wang,
Qiao Jin,
Ting Cui,
Qianying Wang,
Dongke Rong,
Shiqing Deng,
Lingfei Wang,
Kuijuan Jin,
Jun Chen,
Er-Jia Guo
Abstract:
Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion symmetry, accompanied by an enhanced Dzyaloshinskii-Moriya interaction (DMI). In this study, we successfully induced the topological Hall effect (THE) in atomicall…
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Topologically protected spin states hold great promise for applications in next generation of memory circuits and spintronic devices. These intriguing textures typically emerge in bulk materials or heterostructures with broken inversion symmetry, accompanied by an enhanced Dzyaloshinskii-Moriya interaction (DMI). In this study, we successfully induced the topological Hall effect (THE) in atomically designed (DyScO3)n/(SrRuO3)n (DnSn) superlattices over a significant range of temperatures (10~120K) and thicknesses (16~40nm). Using magnetic force microscopy (MFM), we observed the formation and stability of magnetic domains, such as topological skyrmions. By precisely controlling the interlayer thickness (n) and biaxial strain, we elucidated the mechanisms underlying the modulation and induction of magnetic topological states. Supporting evidence was provided by scanning transmission electron microscopy (STEM) and X-ray absorption spectroscopy (XAS), thereby lending further credence to our conclusions. These heterostructures offer a universal method for exploring topological phenomena driven by distorted octahedra, while enhancing the integrability and addressability of topologically protected functional devices.
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Submitted 21 April, 2025;
originally announced April 2025.
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Highly Stable Silicon Anodes Enabled by Sub-10 nm Pores and Particles
Authors:
Pankaj Ghildiyal,
Brandon Wagner,
Jianjun Chen,
Tu Nguyen,
Aishwarya Belamkar,
Juchen Guo,
Lorenzo Mangolini
Abstract:
Silicon anodes offer high energy densities for next-generation lithium-ion batteries; however, their application is limited by severe volume expansion during cycling. Making silicon porous or nanostructured mitigates this expansion but often increases lithium inventory losses due to the inherent high surface area of nanomaterials. This study introduces a simple bottom-up process that overcomes thi…
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Silicon anodes offer high energy densities for next-generation lithium-ion batteries; however, their application is limited by severe volume expansion during cycling. Making silicon porous or nanostructured mitigates this expansion but often increases lithium inventory losses due to the inherent high surface area of nanomaterials. This study introduces a simple bottom-up process that overcomes this limitation. The approach relies on small silicon particles (<10 nm) produced using an efficient low-temperature plasma approach. These small building blocks are assembled into micron-scale superstructures characterized by uniformly dispersed sub-10 nm pores. This structure addresses both volume expansion and lithium-inventory issues while achieving tap densities exceeding those of commercial graphite (~1.2 g/cm3), all while maintaining good processability. The resulting silicon-dominant anodes achieve remarkable stability in full pouch cells with NMC811 and LFP cathodes, retaining ~80% capacity for more than 400 cycles without pre-lithiation, graphite blending, or pre-cycling.
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Submitted 21 April, 2025;
originally announced April 2025.
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Fringe around a Beet Slice: Wetting-induced Dimple in a Thin Liquid Film
Authors:
Zhengyang Liu,
Kunal Kumar,
Yicong Fu,
Abhradeep Maitra,
Justin Chen,
Sunghwan Jung
Abstract:
When a slice of beet is placed on a plate with a thin layer of beet juice, one can observe a clear fringe around the beet, where the color is more translucent than the rest of the juice. The hypotheses in literature were inconsistent and limited, which motivated us to revisit this phenomenon. Using a motorized confocal displacement sensor, we measured the temporal evolution of the liquid surface p…
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When a slice of beet is placed on a plate with a thin layer of beet juice, one can observe a clear fringe around the beet, where the color is more translucent than the rest of the juice. The hypotheses in literature were inconsistent and limited, which motivated us to revisit this phenomenon. Using a motorized confocal displacement sensor, we measured the temporal evolution of the liquid surface profile across the fringe. Our findings suggest that a suction flow, induced by the capillary rise of the contact line, causes a dimple - a small concave depression - to form on the liquid surface. While surface tension and gravity tends to smooth out the dimple, viscous drag acts against them if the liquid film is sufficiently thin. Our scaling analysis correctly estimates the dependence of dimple lifetime on liquid properties and film thickness. We also capture the dimple formation dynamics by numerically solving the lubrication equation with the Young-Laplace equation. This work provides a new interpretation for a common phenomenon.
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Submitted 10 April, 2025;
originally announced April 2025.
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Fractional Chern Insulator and Quantum Anomalous Hall Crystal in Twisted MoTe$_2$
Authors:
Jialin Chen,
Qiaoyi Li,
Xiaoyu Wang,
Wei Li
Abstract:
Recent experimental advances have uncovered fractional Chern insulators in twisted MoTe$_2$ (tMoTe$_2$) systems, posing significant theoretical challenges in understanding the interaction effects and correlated topological phases. Here, we construct a realistic moiré lattice model tailored for tMoTe$_2$ and conduct investigations using state-of-the-art tensor-network methods. Our ground-state calc…
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Recent experimental advances have uncovered fractional Chern insulators in twisted MoTe$_2$ (tMoTe$_2$) systems, posing significant theoretical challenges in understanding the interaction effects and correlated topological phases. Here, we construct a realistic moiré lattice model tailored for tMoTe$_2$ and conduct investigations using state-of-the-art tensor-network methods. Our ground-state calculations reveal a rich array of interaction- and filling-dependent phases, including the FCI, Chern insulator, and generalized Wigner crystal, etc., explaining recent experimental observations. Moreover, we reveal quantum anomalous Hall crystals exhibiting integer Hall conductivity at fractional moiré unit cell fillings, which opens new avenues for experimental exploration in tMoTe$_2$. In the FCI phase, dynamical simulations reveal a single-particle continuum with a finite charge gap, indicating the presence of fractional charge excitations. Moreover, our finite-temperature calculations determine the characteristic temperatures for charge activation and ferromagnetic (FM) transitions, consistent with experiments. We find that the charge gap is significantly larger than the energy scales of both thermal activation and FM transitions, explaining recent experimental observations. Overall, by integrating ground-state, finite-temperature, and dynamical tensor-network calculations on the real-space model, we establish a theoretical framework for understanding and exploring correlated topological phases in tMoTe$_2$ and related systems.
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Submitted 3 June, 2025; v1 submitted 10 April, 2025;
originally announced April 2025.
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Monitored quantum transport: full counting statistics of a quantum Hall interferometer
Authors:
C. W. J. Beenakker,
Jin-Fu Chen
Abstract:
We generalize the Levitov-Lesovik formula for the probability distribution function of the electron charge transferred through a phase coherent conductor, to include projective measurements that monitor the chiral propagation in quantum Hall edge modes. When applied to an electronic Mach-Zehnder interferometer, the monitoring reduces the visibility of the Aharonov-Bohm conductance oscillations whi…
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We generalize the Levitov-Lesovik formula for the probability distribution function of the electron charge transferred through a phase coherent conductor, to include projective measurements that monitor the chiral propagation in quantum Hall edge modes. When applied to an electronic Mach-Zehnder interferometer, the monitoring reduces the visibility of the Aharonov-Bohm conductance oscillations while preserving the binomial form of the counting statistics, thereby removing a fundamental shortcoming of the dephasing-probe model of decoherence.
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Submitted 10 April, 2025;
originally announced April 2025.
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Performance optimization of Nernst-based thermionic engines
Authors:
Wei Yan,
Minglong Lv,
Ousi Pan,
Zhimin Yang,
Jincan Chen,
Shanhe Su
Abstract:
In this paper, we examine the power and efficiency of the thermionic device utilizing the Nernst effect, with a specific focus on its potential application as an engine. The device operates by utilizing the vertical heat current to generate a horizontal particle current against the chemical potential. By considering the influence of a strong magnetic field, we derive analytical expressions for the…
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In this paper, we examine the power and efficiency of the thermionic device utilizing the Nernst effect, with a specific focus on its potential application as an engine. The device operates by utilizing the vertical heat current to generate a horizontal particle current against the chemical potential. By considering the influence of a strong magnetic field, we derive analytical expressions for the current and heat flux. These expressions are dependent on the temperature and chemical potential of heat reservoirs, providing valuable insights into the device performance. The impact of driving temperatures on the performance of the thermionic engine has been assessed through numerical analysis. The research findings will guide the experimental design of Nernst-based thermionic engines.
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Submitted 4 April, 2025;
originally announced April 2025.
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Roadmap for Photonics with 2D Materials
Authors:
F. Javier García de Abajo,
D. N. Basov,
Frank H. L. Koppens,
Lorenzo Orsini,
Matteo Ceccanti,
Sebastián Castilla,
Lorenzo Cavicchi,
Marco Polini,
P. A. D. Gonçalves,
A. T. Costa,
N. M. R. Peres,
N. Asger Mortensen,
Sathwik Bharadwaj,
Zubin Jacob,
P. J. Schuck,
A. N. Pasupathy,
Milan Delor,
M. K. Liu,
Aitor Mugarza,
Pablo Merino,
Marc G. Cuxart,
Emigdio Chávez-Angel,
Martin Svec,
Luiz H. G. Tizei,
Florian Dirnberger
, et al. (123 additional authors not shown)
Abstract:
Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combinat…
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Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combination with layer stacking and twisting, nanofabrication, surface-science methods, and integration into nanostructured environments. Photonics encompasses a multidisciplinary collection of those directions, where 2D materials contribute with polaritons of unique characteristics such as strong spatial confinement, large optical-field enhancement, long lifetimes, high sensitivity to external stimuli (e.g., electric and magnetic fields, heating, and strain), a broad spectral range from the far infrared to the ultraviolet, and hybridization with spin and momentum textures of electronic band structures. The explosion of photonics with 2D materials as a vibrant research area is producing breakthroughs, including the discovery and design of new materials and metasurfaces with unprecedented properties as well as applications in integrated photonics, light emission, optical sensing, and exciting prospects for applications in quantum information, and nanoscale thermal transport. This Roadmap summarizes the state of the art in the field, identifies challenges and opportunities, and discusses future goals and how to meet them through a wide collection of topical sections prepared by leading practitioners.
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Submitted 14 April, 2025; v1 submitted 6 April, 2025;
originally announced April 2025.
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Three-dimensional Optical Reconstruction of colloidal electrokinetics via multiplane imaging
Authors:
Flip de Jong,
Pablo Diez-Silva,
Jui-Kai Chen,
Raúl Pérez-Peláez,
Sudipta Seth,
Harishankar Balakrishnan,
Bing-Yang Shih,
Maarten Rosmeulen,
Santi Nonell,
Susana Rocha,
Andrey Klymchenko,
Luis Liz-Marzán,
Roger Bresolí-Obach,
Manuel I. Marqués,
Rafael Delgado Buscalioni,
Johan Hofkens,
Boris Louis
Abstract:
Selective manipulation of particles is crucial in many fields, ranging from chemistry to biology and physics. Dielectrophoresis stands out due to its high selectivity potential and the absence of need for labels. To fully understand and control the phenomenon, observation of the dynamic of nanoparticles under DEP needs to be performed in the three spatial dimensions. However, not many microscopy a…
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Selective manipulation of particles is crucial in many fields, ranging from chemistry to biology and physics. Dielectrophoresis stands out due to its high selectivity potential and the absence of need for labels. To fully understand and control the phenomenon, observation of the dynamic of nanoparticles under DEP needs to be performed in the three spatial dimensions. However, not many microscopy approaches offer such capability at fast frame rates (>100fps) and high resolution. Here, we used widefield microscopy, to follow the spatiotemporal dynamics of fluorescently labelled polystyrene nanoparticles of 200 nm under positive and negative dielectrophoresis conditions. This real-time 3D imaging technique allows for single particle tracking, enabling super-resolved reconstruction of the DEP force and electrokinetic flows with unprecedented detail. We compare the differences for positive and negative dielectrophoresis conditions and rationalize these by direct comparison with dynamic modeling results. The framework shown here shows great promise to elucidate the frequency-dependent DEP behavior of nanoparticle, crucial for particle manipulation and sorting.
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Submitted 31 March, 2025;
originally announced March 2025.
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Transforming Siliconization into Slippery Liquid-like Coatings
Authors:
Hernán Barrio-Zhang,
Glen McHale,
Gary G. Wells,
Rodrigo Ledesma-Aguilar,
Rui Han,
Nicholas Jakubovics,
Jinju Chen
Abstract:
Siliconization is widely used as a coating technique to engineer surface properties, such as in the pharmaceutical and medical device industries to lubricate motion, ensure complete dispensation of product, and to inhibit protein adsorption and biofilm growth. In the hitherto unconnected literature, there has recently been significant progress in understanding the concept of surfaces slippery to l…
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Siliconization is widely used as a coating technique to engineer surface properties, such as in the pharmaceutical and medical device industries to lubricate motion, ensure complete dispensation of product, and to inhibit protein adsorption and biofilm growth. In the hitherto unconnected literature, there has recently been significant progress in understanding the concept of surfaces slippery to liquids. Whereas in the siliconization industry the wettability of surfaces focuses on the hydrophobicity, as measured by contact angle and surface energy, for surfaces slippery to liquids the focus is on the contact angle hysteresis (droplet-on-solid static friction). Moreover, it has been discovered that surfaces with similar static wetting properties can have dramatically different droplet kinetic friction. Here, we report a simple-to-apply coating method to create ultra-low contact angle hysteresis liquid-like coatings for glass (G), polydimethylsiloxane (PDMS), polyurethane (PU), and stainless steel (SS); materials that are used for pharmaceutical/parenteral packaging and medical equipment. Moreover, we demonstrate that the coating's slow sliding dynamics surface properties for water droplets, which indicate high droplet kinetic friction, can be converted into fast sliding dynamics, which indicate low droplet kinetic friction, by a simple molecular capping (methylation) process. Our results provide new insight into key aspects of siliconization coatings in the context of industrial/commercial processes.
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Submitted 28 March, 2025;
originally announced March 2025.
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Individual and cooperative superexchange enhancement in cuprates
Authors:
Tonghuan Jiang,
Nikolay A. Bogdanov,
Ali Alavi,
Ji Chen
Abstract:
It is now widely accepted that the antiferromagnetic coupling within high temperature superconductors strongly exhibits a profound correlation with the upper limit of superconducting transition temperature these materials can reach. Thus, accurately calculating the positive and negative mechanisms that influence magnetic coupling in specific materials is crucial for the exploration of superconduct…
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It is now widely accepted that the antiferromagnetic coupling within high temperature superconductors strongly exhibits a profound correlation with the upper limit of superconducting transition temperature these materials can reach. Thus, accurately calculating the positive and negative mechanisms that influence magnetic coupling in specific materials is crucial for the exploration of superconductivity at higher temperatures. Nevertheless, it is notoriously difficult to establish a complete description of electron correlations employing ab initio theories because of the large number of orbitals involved. In this study, we tackle the challenge of achieving high-level ab initio wave function theory calculations, which allow an explicit treatment of electron correlations associated with a large number of high-energy orbitals. We elucidate the atomic-shell-wise contributions to the superexchange coupling in the lanthanum cuprate, including individual effects of high-energy orbitals (Cu 4d, 5d, 4f, 5p) and cooperative effects between the core and these high-energy orbitals. Specifically, the prominent contributions from Cu 4d, 5d, 4f and 5p give rise to a rich collection of previously unexamined superexchange channels. We propose a p-d-f model to universally account for the contributions of high-energy orbitals at copper sites. Our calculations and physical rationalizations offer a more robust theoretical foundation for investigating cuprate-type high-temperature superconductors.
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Submitted 21 March, 2025;
originally announced March 2025.
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Deep Learning Sheds Light on Integer and Fractional Topological Insulators
Authors:
Xiang Li,
Yixiao Chen,
Bohao Li,
Haoxiang Chen,
Fengcheng Wu,
Ji Chen,
Weiluo Ren
Abstract:
Electronic topological phases of matter, characterized by robust boundary states derived from topologically nontrivial bulk states, are pivotal for next-generation electronic devices. However, understanding their complex quantum phases, especially at larger scales and fractional fillings with strong electron correlations, has long posed a formidable computational challenge. Here, we employ a deep…
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Electronic topological phases of matter, characterized by robust boundary states derived from topologically nontrivial bulk states, are pivotal for next-generation electronic devices. However, understanding their complex quantum phases, especially at larger scales and fractional fillings with strong electron correlations, has long posed a formidable computational challenge. Here, we employ a deep learning framework to express the many-body wavefunction of topological states in twisted ${\rm MoTe_2}$ systems, where diverse topological states are observed. Leveraging neural networks, we demonstrate the ability to identify and characterize topological phases, including the integer and fractional Chern insulators as well as the $Z_2$ topological insulators. Our deep learning approach significantly outperforms traditional methods, not only in computational efficiency but also in accuracy, enabling us to study larger systems and differentiate between competing phases such as fractional Chern insulators and charge density waves. Our predictions align closely with experimental observations, highlighting the potential of deep learning techniques to explore the rich landscape of topological and strongly correlated phenomena.
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Submitted 14 March, 2025;
originally announced March 2025.
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Thermodynamics of the Hubbard Model on the Bethe Lattice
Authors:
Jia-Lin Chen,
Zhen Fan,
Bo Zhan,
Jiahang Hu,
Tong Liu,
Junyi Ji,
Kang Wang,
Hai-Jun Liao,
Tao Xiang
Abstract:
We investigate the thermodynamic properties of the Hubbard model on the Bethe lattice with a coordination number of 3 using the thermal canonical tree tensor network method. Our findings reveal two distinct thermodynamic phases: a low-temperature antiferromagnetic phase, where spin SU(2) symmetry is broken, and a high-temperature paramagnetic phase. A key feature of the system is the separation of…
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We investigate the thermodynamic properties of the Hubbard model on the Bethe lattice with a coordination number of 3 using the thermal canonical tree tensor network method. Our findings reveal two distinct thermodynamic phases: a low-temperature antiferromagnetic phase, where spin SU(2) symmetry is broken, and a high-temperature paramagnetic phase. A key feature of the system is the separation of energy scales for charge and spin excitations, which is reflected in the temperature dependence of thermodynamic quantities and the disparity between spin and charge gaps extracted from their respective susceptibilities. At the critical point, both spin and charge susceptibilities exhibit singularities, suggesting that charge excitations are not fully decoupled from their spin counterparts. Additionally, the double occupancy number exhibits a non-monotonic temperature dependence, indicative of an entropy-driven Pomeranchuk effect. These results demonstrate that the loopless Bethe lattice effectively captures the essential physics of the Hubbard model while providing a computationally efficient framework for studying strongly correlated electronic systems.
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Submitted 14 March, 2025;
originally announced March 2025.
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Flow Matching for Discrete Systems: Efficient Free Energy Sampling Across Lattice Sizes and Temperatures
Authors:
Ping Tuo,
ZeZhu Zeng,
Jiale Chen,
Bingqing Cheng
Abstract:
Generative models have advanced significantly in sampling material systems with continuous variables, such as atomistic structures. However, their application to discrete variables, like atom types or spin states, remains underexplored. In this work, we introduce a Boltzmann generator built on discrete flow matching, specifically tailored for systems with discrete phase-space coordinates (e.g., th…
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Generative models have advanced significantly in sampling material systems with continuous variables, such as atomistic structures. However, their application to discrete variables, like atom types or spin states, remains underexplored. In this work, we introduce a Boltzmann generator built on discrete flow matching, specifically tailored for systems with discrete phase-space coordinates (e.g., the Ising model or crystalline compounds). This approach enables a single model to sample free energy surfaces over a wide temperature range with minimal training overhead. In addition, the model generation is scalable to larger lattice sizes than those in the training set. We demonstrate the effectiveness of our approach on the 2D Ising model, showing efficient and reliable free energy sampling. This framework provides a scalable and computationally efficient solution for discrete coordinate systems and can be extended to sample the alchemical degrees of freedom in crystalline compounds.
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Submitted 11 March, 2025;
originally announced March 2025.
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Dynamic Transfer of Chiral Edge States in Topological Type-II Hyperbolic Lattices
Authors:
Jingming Chen,
Linyun Yang,
Zhen Gao
Abstract:
The discovery of hyperbolic lattice, a discretized regularization of non-Euclidean space with constant negative curvature, has provided an unprecedented platform to extend topological phases of matter from Euclidean to non-Euclidean spaces. To date, however, all previous hyperbolic topological states are limited to conventional type-I hyperbolic lattice with a single edge, leaving the dynamic tran…
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The discovery of hyperbolic lattice, a discretized regularization of non-Euclidean space with constant negative curvature, has provided an unprecedented platform to extend topological phases of matter from Euclidean to non-Euclidean spaces. To date, however, all previous hyperbolic topological states are limited to conventional type-I hyperbolic lattice with a single edge, leaving the dynamic transfer of hyperbolic topological states between different edges completely unresolved. Here, by extending the hyperbolic topological physics from the conventional type-I hyperbolic lattices to the newfangled type-II hyperbolic lattices, we report the type-II hyperbolic Chern insulator featuring outer and inner chiral edge states and demonstrate their dynamic transfer across the bulk to the opposite edge via two distinct mechanisms: anti-parity-time phase transition and Landau-Zener single-band pumping. Our work lays the foundation for further exploring the dynamic evolution of hyperbolic topological effects, with the final goal of inspiring applications leveraging dynamic manipulations of the hyperbolic topological states.
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Submitted 8 March, 2025;
originally announced March 2025.
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Single Atom Catalysts with Halogen Ligands: Elevating the HER Performance of Pd-anchored MoS2 monolayer
Authors:
Feng Sun,
Xuqiang Zhang,
Jiangtao Chen,
Yun Zhao,
Yan Li
Abstract:
Single-atom catalysts (SACs) have attracted ever-growing interest due to their high atom-utilization efficiency and potential for cost-effective of hydrogen production. However, enhancing the hydrogen evolution reaction (HER) performance remains a key challenge in developing SACs for HER technology. Herein, we employed first-principles calculations in conjunction with the climbing-image nudged ela…
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Single-atom catalysts (SACs) have attracted ever-growing interest due to their high atom-utilization efficiency and potential for cost-effective of hydrogen production. However, enhancing the hydrogen evolution reaction (HER) performance remains a key challenge in developing SACs for HER technology. Herein, we employed first-principles calculations in conjunction with the climbing-image nudged elastic band (CI-NEB) method to explore the effect of surface ligands (F, Cl, Br, I) on the HER performance and mechanism of single-atom (Pd or Cu)-anchored MoS2 monolayer. The results indicate that the relative Gibbs free energy for the adsorbed hydrogen atom in the I-Pd@MoS2 system is an exceptionally low value of -0.13 eV, which is not only comparable to that of Pt-based catalysts but also significantly more favorable than the calculated 0.84 eV for Pd@MoS2. However, the introduction of ligands to Cu@MoS2 deteriorates HER performance due to strong coupling between the absorbed H and ligands. It reveals that the ligand I restructures the local chemical microenvironment surrounding the SAC Pd, leading to impurity bands near the Fermi level that couple favorably with the s states of H atoms, yielding numerous highly active sites to enhance catalytic performance. Furthermore, the CI-NEB method elucidates that the enhanced HER mechanism for the I-Pd@MoS2 catalyst should belong to the coexistence of the Volmer-Tafel and Volmer-Heyrovsky reactions. This investigation provides a valuable framework for the experimental design and development of innovative single-atom catalysts.
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Submitted 8 March, 2025;
originally announced March 2025.
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Many-Body Localization and Particle Statistics in Disordered Bose-Hubbard Model
Authors:
Jie Chen,
Chun Chen,
Xiaoqun Wang
Abstract:
We study the potential influence of the particle statistics on the stability of the many-body localization in the disordered Bose-Hubbard model. Within the higher-energy section of the dynamical phase diagram, we find that there is no apparent finite-size boundary drift between the thermal phase and the many-body localized regime. We substantiate this observation by introducing the Van Vleck pertu…
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We study the potential influence of the particle statistics on the stability of the many-body localization in the disordered Bose-Hubbard model. Within the higher-energy section of the dynamical phase diagram, we find that there is no apparent finite-size boundary drift between the thermal phase and the many-body localized regime. We substantiate this observation by introducing the Van Vleck perturbation theory into the field of many-body localization. The appropriateness of this method rests largely on the peculiar Hilbert-space structure enabled by the particles' Bose statistics. The situation is reversed in the lower-energy section of the dynamical phase diagram, where the significant finite-size boundary drift pushes the putative many-body localized regime up to the greater disorder strengths. We utilize the algebraic projection method to make a connection linking the disordered Bose-Hubbard model in the lower-energy section to an intricate disordered spin chain model. This issue of the finite-size drift could hence be analogous to what happens in the disordered Heisenberg chain. Both trends might be traced back to the particles' intrinsic or emergent Fermi statistics.
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Submitted 5 March, 2025;
originally announced March 2025.
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Spontaneous rotational symmetry breaking induced by electronic instability in the normal state of La_{1-x} Sr_{x} NiO_{2}
Authors:
Qiang Zhao,
Rui Liu,
Wen-Long Yang,
Xue-Yan Wang,
Jia-Kun Luo,
Jing-Yuan Ma,
Fang-Hui Zhu,
Cheng-Xue Chen,
Mei-Ling Yan,
Rui-Fen Dou,
Chang-Min Xiong,
Chi Xu,
Xing-Ye Lu,
Hai-Wen Liu,
Ji-Kun Chen,
Zhi-Ping Yin,
Jia-Cai Nie
Abstract:
The spontaneous rotational symmetry breaking (RSB), a hallmark phenomenon in cuprate and iron-based high-temperature superconductors, is believed to intimately connected to superconductivity, both of which originate from interactions among different degrees of freedoms and competing quantum states. Understanding RSB is pivotal for unraveling the microscopic origin of unconventional superconductivi…
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The spontaneous rotational symmetry breaking (RSB), a hallmark phenomenon in cuprate and iron-based high-temperature superconductors, is believed to intimately connected to superconductivity, both of which originate from interactions among different degrees of freedoms and competing quantum states. Understanding RSB is pivotal for unraveling the microscopic origin of unconventional superconductivity. Although infinite-layer nickelates (ILNs) share similar crystalline structure and the same nominal 3d-electron configurations with cuprates, they have significant differences in Fermi surface topology, electronic band characteristics, and charge order. These distinctions make ILNs an ideal platform for studying RSB in unconventional superconductors. Through angular-resolved resistivity measurements within a large temperature and doping range, we identify pronounced RSB signatures near doping concentrations x=0.05 and 0.25. Based on the strongly correlated electronic structures from combined density functional theory and dynamical mean field theory calculations, we find that the calculated electronic susceptibility has a peak structure at the corresponding doping concentration, indicating pronounced electronic instabilities which drive RSB. Detailed analysis of the electronic susceptibility demonstrates that the van Hove singularity at the Fermi level significantly contributes to the electronic instability at 0.05 Sr doping. Our findings reveal the important role of electronic correlation, Van Hove singularity, and Fermi surface nesting in the emergence of RSB. Our work not only deepens the understanding of electronic behavior in ILNs, but also provides new ideas and methods for exploring RSB in other unconventional superconductors.
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Submitted 16 March, 2025; v1 submitted 5 March, 2025;
originally announced March 2025.
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Simulating Bulk Gap in Chiral Projected Entangled-Pair States
Authors:
Ji-Yao Chen,
Yi Tan,
Sylvain Capponi,
Didier Poilblanc,
Fei Ye,
Jia-Wei Mei
Abstract:
Projected entangled-pair states (PEPS) have proven effective in capturing chiral spin liquid ground states, yet the presence of long-range ``gossamer'' correlation tails raises concerns about their ability to accurately describe bulk gaps. Here, we address this challenge and demonstrate that PEPS can reliably characterize gapped bulk excitations in chiral topological phases. Using a variational pr…
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Projected entangled-pair states (PEPS) have proven effective in capturing chiral spin liquid ground states, yet the presence of long-range ``gossamer'' correlation tails raises concerns about their ability to accurately describe bulk gaps. Here, we address this challenge and demonstrate that PEPS can reliably characterize gapped bulk excitations in chiral topological phases. Using a variational principle for excited states within a local mode approximation, we establish that correlation functions decaying faster than $r^{-2}$ are not necessarily related to gapless modes and thus long-range ``gossamer'' correlation tails in chiral PEPS do not contradict the presence of a bulk gap. This framework is validated in the spin-$\frac{1}{2}$ Kitaev model with a chiral term, where PEPS yields excitation gaps that agree well with exact solutions. Extending our approach to the $\mathbb{Z}_3$ Kitaev model, we present compelling evidence for its chiral ground state and accurately resolve its gapped excitations. These findings thus solidify PEPS as a powerful tool for studying both ground and excited states in chiral topological systems, thereby bridging a key gap in the understanding of their bulk properties.
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Submitted 27 February, 2025;
originally announced February 2025.
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Thermodynamically Consistent Lindbladians for Quantum Stochastic Thermodynamics
Authors:
Jin-Fu Chen
Abstract:
We develop a Lindblad framework for quantum stochastic thermodynamics to study the nonequilibrium thermodynamics of open quantum systems. Our approach adopts the local quantum detailed balance condition, ensuring thermodynamic consistency and leading to a joint fluctuation theorem of quantum work and heat. Instead of solving the full evolution of the density matrix, we employ an effective parametr…
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We develop a Lindblad framework for quantum stochastic thermodynamics to study the nonequilibrium thermodynamics of open quantum systems. Our approach adopts the local quantum detailed balance condition, ensuring thermodynamic consistency and leading to a joint fluctuation theorem of quantum work and heat. Instead of solving the full evolution of the density matrix, we employ an effective parametrization to derive the full counting statistics of work and heat and determine the optimal protocols. As an application, we refine the quantum Brownian motion master equation to ensure the quantum detailed balance condition, derive the optimal protocols at different temperatures, and study the work statistics. Our framework provides fundamental insights and practical strategies for optimizing thermodynamic processes in open quantum systems.
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Submitted 27 February, 2025;
originally announced February 2025.
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High-Pressure Tuning of Electrical Transport in Freestanding Oxide Films
Authors:
Jingxin Chen,
Xiang Huang,
Zhihan Qiao,
Jiao Li,
Jiahao Xu,
Haiyang Zhang,
Deyang Li,
Enyang Men,
Hangtian Wang,
Han Zhang,
Jianyu Xie,
Guolin Zheng,
Mingliang Tian,
Qun Niu,
Lin Hao
Abstract:
Electrical transport of oxide films under high pressure is largely unexplored due to the absence of a universal strategy. In this work, we have developed an in-house route to investigate the electrical transport properties of oxide films under high pressures, by improving the elasticity of freestanding oxide films and the robustness of high-pressure techniques on nano-devices. As a showcase, we in…
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Electrical transport of oxide films under high pressure is largely unexplored due to the absence of a universal strategy. In this work, we have developed an in-house route to investigate the electrical transport properties of oxide films under high pressures, by improving the elasticity of freestanding oxide films and the robustness of high-pressure techniques on nano-devices. As a showcase, we investigated the electrical resistivity of perovskite SrIrO3 films under high pressures, and found a pressure-driven semimetal-to-insulator transition and an insulator-to-metal transition. At the monolayer-limit, the SrIrO3 films directly transform from an insulating state to a metallic state, highlighting the intriguing interplay of dimensionality and hydrostatic pressure in correlated oxides, which can be unveiled through the universal high-pressure strategy.
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Submitted 26 February, 2025;
originally announced February 2025.
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Optimal neutralization of negative space charges in photon-enhanced thermionic emission devices under bidirectional discharge
Authors:
Xinqiao Lin,
Zhiqiang Fan,
Shunjie Zhang,
Xiaohang Chen,
Zhimin Yang,
Jincan Chen,
Shanhe Su
Abstract:
In this study, we innovatively modeled photon-enhanced thermionic emission (PETE) devices, incorporating positive ion injection and bidirectional discharge's effects on the space charge barrier simultaneously. Compared to previous models, our model allows the positive ion distribution function to be compatible with scenarios in which the anode motive is either higher or lower than the cathode moti…
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In this study, we innovatively modeled photon-enhanced thermionic emission (PETE) devices, incorporating positive ion injection and bidirectional discharge's effects on the space charge barrier simultaneously. Compared to previous models, our model allows the positive ion distribution function to be compatible with scenarios in which the anode motive is either higher or lower than the cathode motive, and also adapts to significant anode discharge. Through numerical simulations and parametric analyses, we found that: (1) As the ratio of the positive ion increases, the capability for space charge neutralization becomes stronger. (2) The lower the electron affinity is, the smaller the ratio of positive ions are required. (3) When the anode temperature is higher or the anode work function is lower, the impact of reverse discharge on the net current density is more pronounced. Conversely, when the anode temperature is higher or the anode work function is greater, the ratio of positive ions required to achieve complete space charge neutralization increases. This study further elucidates the mechanisms and characteristics of space charge neutralization effects in PETE devices, providing a theoretical foundation for optimizing their design. Additionally, the accompanying theory and algorithm possess the potential to spark innovative research across diverse fields.
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Submitted 25 February, 2025;
originally announced February 2025.
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Controlling spin currents with magnon interference in a canted antiferromagnet
Authors:
Lutong Sheng,
Anna Duvakina,
Hanchen Wang,
Kei Yamamoto,
Rundong Yuan,
Jinlong Wang,
Peng Chen,
Wenqing He,
Kanglin Yu,
Yuelin Zhang,
Jilei Chen,
Junfeng Hu,
Song Liu,
Xiufeng Han,
Dapeng Yu,
Jean-Philippe Ansermet,
Sadamichi Maekawa,
Dirk Grundler,
Haiming Yu
Abstract:
Controlling spin current lies at the heart of spintronics and its applications. The sign of spin currents is monotonous in ferromagnets once the current direction is determined. Spin currents in antiferromagnets can possess opposite polarization, but requires enormous magnetic fields to lift the degeneracy. Controlling spin currents with different polarization is urgently demanded but remains hith…
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Controlling spin current lies at the heart of spintronics and its applications. The sign of spin currents is monotonous in ferromagnets once the current direction is determined. Spin currents in antiferromagnets can possess opposite polarization, but requires enormous magnetic fields to lift the degeneracy. Controlling spin currents with different polarization is urgently demanded but remains hitherto elusive. Here, we demonstrate the control of spin currents at room temperature by magnon interference in a canted antiferromagnet, hematite recently also classified as an altermagnet. Magneto-optical characterization by Brillouin light scattering revealed that the spatial periodicity of the beating patterns was tunable via the microwave frequency. The inverse spin-Hall voltage changed sign as the frequency was scanned, i.e., a frequency-controlled switching of polarization in pure spin currents was obtained. Our work marks the use of antiferromagnetic magnon interference to control spin currents, which substantially extends the horizon for the emerging field of coherent antiferromagnetic spintronics.
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Submitted 24 February, 2025;
originally announced February 2025.
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Emergence of Fermi's Golden Rule in the Probing of a Quantum Many-Body System
Authors:
Jianyi Chen,
Songtao Huang,
Yunpeng Ji,
Grant L. Schumacher,
Alan Tsidilkovski,
Alexander Schuckert,
Gabriel G. T. Assumpção,
Nir Navon
Abstract:
Fermi's Golden Rule (FGR) is one of the most impactful formulas in quantum mechanics, providing a link between easy-to-measure observables - such as transition rates - and fundamental microscopic properties - such as density of states or spectral functions. Its validity relies on three key assumptions: the existence of a continuum, an appropriate time window, and a weak coupling. Understanding the…
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Fermi's Golden Rule (FGR) is one of the most impactful formulas in quantum mechanics, providing a link between easy-to-measure observables - such as transition rates - and fundamental microscopic properties - such as density of states or spectral functions. Its validity relies on three key assumptions: the existence of a continuum, an appropriate time window, and a weak coupling. Understanding the regime of validity of FGR is critical for the proper interpretation of most spectroscopic experiments. While the assumptions underlying FGR are straightforward to analyze in simple models, their applicability is significantly more complex in quantum many-body systems. Here, we observe the emergence and breakdown of FGR, using a strongly interacting homogeneous spin-$1/2$ Fermi gas coupled to a radio-frequency (rf) field. Measuring the transition probability into an outcoupled internal state, we map the system's dynamical response diagram versus the rf-pulse duration $t$ and Rabi frequency $Ω_0$. For weak drives, we identify three regimes: an early-time regime where the transition probability takes off as $t^2$, an intermediate-time FGR regime, and a long-time non-perturbative regime. Beyond a threshold Rabi frequency, Rabi oscillations appear. Our results provide a blueprint for the applicability of linear response theory to the spectroscopy of quantum many-body systems.
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Submitted 28 April, 2025; v1 submitted 20 February, 2025;
originally announced February 2025.
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Quantify the stability of Majorana qubits through Rabi beat
Authors:
Yu Zhang,
Jiayi Chen,
Jie Liu,
X. C. Xie
Abstract:
Evaluating the stability of Majorana qubits (MQ) is crucial for the advancement of topological quantum computation. In this work, we propose a method to quantify the stability of MQs through their Rabi oscillations.Our approach involves coupling a fermionic state to the MQ and measuring the resulting Rabi oscillations induced by this coupling. This setup is feasible across a range of experimental…
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Evaluating the stability of Majorana qubits (MQ) is crucial for the advancement of topological quantum computation. In this work, we propose a method to quantify the stability of MQs through their Rabi oscillations.Our approach involves coupling a fermionic state to the MQ and measuring the resulting Rabi oscillations induced by this coupling. This setup is feasible across a range of experimental platforms.We show that Rabi beats emerge when considering finite-size effects and inhomogeneous potentials. The beating frequency is directly related to the deviations caused by these factors, providing a quantitative method to assess the stability of Majorana qubits.Additionally, we investigate the impact of dissipation on MQ stability. We find that the beating patterns are unaffected by weak dissipation. More intriguingly, dissipation would weaken in an ideal MQ. This suggests that non-local qubits can effectively avoid certain types of decoherence.
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Submitted 13 February, 2025;
originally announced February 2025.
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Pressure-induced structural and superconducting transitions in black arsenic
Authors:
Y. Y. Wu,
L. Mu,
Y. L. Zhang,
D. Z. Dai,
K. Meng,
S. Y. Huang,
X. Zhang,
S. C. Huang,
J. Chen,
H. G. Yan,
S. Y. Li
Abstract:
We report high-pressure Raman spectra and resistance measurements of black arsenic (b-As) up to 58 GPa, along with phonon density of states (DOS) and enthalpy calculations for four reported arsenic phases up to 50 GPa. It is found that metastable b-As transforms into gray arsenic (g-As) phase at a critical pressure of 1.51 GPa, followed by subsequent transitions to simple cubic arsenic (c-As) and…
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We report high-pressure Raman spectra and resistance measurements of black arsenic (b-As) up to 58 GPa, along with phonon density of states (DOS) and enthalpy calculations for four reported arsenic phases up to 50 GPa. It is found that metastable b-As transforms into gray arsenic (g-As) phase at a critical pressure of 1.51 GPa, followed by subsequent transitions to simple cubic arsenic (c-As) and incommensurate host-guest arsenic (hg-As) phases at 25.9 and 44.8 GPa, respectively. Superconductivity emerges above 25 GPa in the c-As phase, with the superconducting transition temperature ($T$$\rm_c$) remaining nearly a constant of 3 K. Upon further compression, $T$$\rm_c$ steeply increases to a higher value around 4.5 K in the incommensurate hg-As phase above 43 GPa. We use our results to update the structural and superconducting phase diagrams under pressure for the novel semiconductor, black arsenic.
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Submitted 3 February, 2025;
originally announced February 2025.
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Bacterial dimensions sensitively regulate surface diffusivity and residence time
Authors:
Premkumar Leishangthem,
Xuan Wang,
Junan Chen,
Shengqi Yang,
Xinliang Xu
Abstract:
Run-and-tumble is a common but vital strategy that bacteria employ to explore environment suffused with boundaries, as well as to escape from entrapment. In this study we reveal how this strategy and the resulting dynamical behavior can be sensitively regulated by bacterial dimensions. Our results demonstrate that the logarithm of the surface residence time for bacteria with constant tumble bias i…
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Run-and-tumble is a common but vital strategy that bacteria employ to explore environment suffused with boundaries, as well as to escape from entrapment. In this study we reveal how this strategy and the resulting dynamical behavior can be sensitively regulated by bacterial dimensions. Our results demonstrate that the logarithm of the surface residence time for bacteria with constant tumble bias is linearly related to a dimensionless parameter of bacterial intrinsic size characteristics, where a small variation in bacterial dimensions, which is natural in a suspension, reproduces well the experimentally observed large variation in bacterial residence time. Furthermore, our results predict that the optimal tumble bias corresponding to the maximum surface diffusivity depends strongly on bacterial dimensions, where the same small variation in bacterial dimensions gives rise to a strongly diversified optimal tumble bias and an order of magnitude change in surface diffusivity.
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Submitted 29 January, 2025;
originally announced January 2025.
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Quantum oscillations of holes in GaN
Authors:
Chuan F. C. Chang,
Joseph E. Dill,
Zexuan Zhang,
Jie-Cheng Chen,
Naomi Pieczulewski,
Samuel J. Bader,
Oscar Ayala Valenzuela,
Scott A. Crooker,
Fedor F. Balakirev,
Ross D. McDonald,
Jimy Encomendero,
David A. Muller,
Feliciano Giustino,
Debdeep Jena,
Huili Grace Xing
Abstract:
GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transpor…
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GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transport in GaN. Here, we present the first observation of quantum oscillations of holes in GaN. Shubnikov-de Haas (SdH) oscillations in hole resistivity are observed in a quantum-confined two-dimensional hole gas at a GaN/AlN interface, where polarization-induced doping overcomes thermal freeze-out, and a sharp and clean interface boosts the hole mobility enough to unmask the quantum oscillations. These holes degenerately occupy the light and heavy hole bands of GaN and have record-high mobilities of ~1900 cm2/Vs and ~400 cm2/Vs at 3K, respectively. We use magnetic fields up to 72 T to resolve SdH oscillations of holes from both valence bands to extract their respective sheet densities, quantum scattering times, and the effective masses of light holes (0.5-0.7 m0) and heavy holes (1.9 m0). SdH oscillations of heavy and light holes in GaN constitute a direct metrology of valence bands and open new venues for quantum engineering in this technologically important semiconductor. Like strained silicon transistors, strain-engineering of the valence bands of GaN is predicted to dramatically improve hole mobilities by reducing the hole effective mass, a proposal that can now be explored experimentally, particularly in a fully fabricated transistor, using quantum oscillations. Furthermore, the findings of this work suggest a blueprint to create 2D hole gases and observe quantum oscillations of holes in related wide bandgap semiconductors such as SiC and ZnO in which such techniques are not yet possible.
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Submitted 27 January, 2025;
originally announced January 2025.
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Centenary progress from the Nernst theorem to the Nernst statement
Authors:
Xiaohang Chen,
Shanhe Su,
Yinghui Zhou,
Jincan Chen
Abstract:
It is found from textbooks that there are the different versions of the schematic diagram related to the Nernst equation, and consequently, it leads to some discussion related to the Nernst equation and the discovery of other meaningful schematic diagrams never appearing in literature. It is also found that through the introduction of a new function, the schematic diagram of the Nernst equation in…
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It is found from textbooks that there are the different versions of the schematic diagram related to the Nernst equation, and consequently, it leads to some discussion related to the Nernst equation and the discovery of other meaningful schematic diagrams never appearing in literature. It is also found that through the introduction of a new function, the schematic diagram of the Nernst equation in the isothermal process of any thermodynamic system can be generated in a unified way and that the Nernst equation can be re-obtained from the experimental data of low-temperature chemical reactions without any artificial additional assumptions. The results obtained here show clearly that the centenary progress from the Nernst theorem to the Nernst statement is completed.
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Submitted 18 January, 2025;
originally announced January 2025.
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Berezinskii-Kosterlitz-Thouless region and magnetization plateaus in easy-axis triangular weak-dimer antiferromagnet K$_2$Co$_2$(SeO$_3$)$_3$
Authors:
Ying Fu,
Han Ge,
Jian Chen,
Jie Xiao,
Yi Tan,
Le Wang,
Junfeng Wang,
Chao Dong,
Zhe Qu,
Miao He,
Chuanying Xi,
Langsheng Ling,
Bin Xi,
Jia-Wei Mei
Abstract:
We investigate the magnetic phase diagram of the bilayer triangular antiferromagnet K$_2$Co$_2$(SeO$_3$)$_3$, revealing a rich interplay among geometric frustration, bilayer coupling, and symmetry-driven phenomena. High-field magnetization measurements show fractional magnetization plateaus at 1/3, 1/2, 2/3, and 5/6 of the saturation magnetization. To elucidate the experimental magnetic phase diag…
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We investigate the magnetic phase diagram of the bilayer triangular antiferromagnet K$_2$Co$_2$(SeO$_3$)$_3$, revealing a rich interplay among geometric frustration, bilayer coupling, and symmetry-driven phenomena. High-field magnetization measurements show fractional magnetization plateaus at 1/3, 1/2, 2/3, and 5/6 of the saturation magnetization. To elucidate the experimental magnetic phase diagram at low fields, we propose that K$_2$Co$_2$(SeO$_3$)$_3$ can be described as an easy-axis triangular weak-dimer antiferromagnet. We emphasize the critical role of the emergent $U(1) \otimes S_3$ symmetry, where $S_3 = \mathbb{Z}_3 \otimes \mathbb{Z}_2^d$, in determining the magnetic phases at low fields. The remarkable agreement between the experimental and theoretical phase diagrams suggests that the phase transitions are governed by this symmetry. Notably, our combined experimental and theoretical results identify a Berezinskii-Kosterlitz-Thouless (BKT) phase region at finite fields. These findings provide new insights into the phase structure of frustrated magnets and establish K$_2$Co$_2$(SeO$_3$)$_3$ as a compelling platform for exploring unconventional quantum phenomena in $U(1) \otimes S_3$ systems.
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Submitted 23 January, 2025; v1 submitted 16 January, 2025;
originally announced January 2025.
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Ferroelectricity in layered bismuth oxide down to 1 nanometer
Authors:
Qianqian Yang,
Jingcong Hu,
Yue-Wen Fang,
Yueyang Jia,
Rui Yang,
Shiqing Deng,
Yue Lu,
Oswaldo Dieguez,
Longlong Fan,
Dongxing Zheng,
Xixiang Zhang,
Yongqi Dong,
Zhenlin Luo,
Zhen Wang,
Huanhua Wang,
Manling Sui,
Xianran Xing,
Jun Chen,
Jianjun Tian,
Linxing Zhang
Abstract:
Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution…
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Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-effect transistors, low-power logic, and nonvolatile memories. We devised a film with a layered structure of bismuth oxide that can stabilize the ferroelectric state down to 1 nanometer through samarium bondage. This film can be grown on a variety of substrates with a cost-effective chemical solution deposition. We observed a standard ferroelectric hysteresis loop down to a thickness of ~1 nanometer. The thin films with thicknesses that range from 1 to 4.56 nanometers possess a relatively large remanent polarization from 17 to 50 microcoulombs per square centimeter. We verified the structure with first-principles calculations, which also pointed to the material being a lone pair-driven ferroelectric material. The structure design of the ultrathin ferroelectric films has great potential for the manufacturing of atomic-scale electronic devices.
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Submitted 16 January, 2025;
originally announced January 2025.
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Flat Band and Many-body Gap in Chirally Twisted Triple Bilayer Graphene
Authors:
Wenlu Lin,
Wenxuan Wang,
Shimin Cao,
Miao Liang,
Lili Zhao,
Kenji Watanabe,
Takashi Taniguchi,
Jinhua Gao,
Jianhao Chen,
Xiaobo Lu,
Yang Liu
Abstract:
We experimentally investigate the band structures of chirally twisted triple bilayer graphene. The new kind of moiré structure, formed by three pieces of helically stacked Bernal bilayer graphene, has flat bands at charge neutral point based on the continuum approximation. We experimentally confirm the existence of flat bands and directly acquire the gap in-between flat bands as well as between th…
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We experimentally investigate the band structures of chirally twisted triple bilayer graphene. The new kind of moiré structure, formed by three pieces of helically stacked Bernal bilayer graphene, has flat bands at charge neutral point based on the continuum approximation. We experimentally confirm the existence of flat bands and directly acquire the gap in-between flat bands as well as between the flat bands and dispersive bands from the capacitance measurements. We discover a finite gap even at zero perpendicular electric field, possibly induced by the Coulomb interaction and ferromagnetism. Our quantitative study not only provides solid evidence for the flat-band and interesting physics, but also introduces a quantitative approach to explore phenomena of similar moiré systems.
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Submitted 12 January, 2025;
originally announced January 2025.
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Overcoming the surface paradox: Buried perovskite quantum dots in wide-bandgap perovskite thin films
Authors:
Hao Zhang,
Altaf Pasha,
Isaac Metcalf,
Jianlin Zhou,
Mathias Staunstrup,
Yunxuan Zhu,
Shusen Liao,
Ken Ssennyimba,
Jia-Shiang Chen,
Surya Prakash Reddy,
Simon Thébaud,
Jin Hou,
Xinting Shuai,
Faiz Mandani,
Siraj Sidhik,
Matthew R. Jones,
Xuedan Ma,
R Geetha Balakrishna,
Sandhya Susarla,
David S. Ginger,
Claudine Katan,
Mercouri G. Kanatzidis,
Moungi G. Bawendi,
Douglas Natelson,
Philippe Tamarat
, et al. (3 additional authors not shown)
Abstract:
Colloidal perovskite quantum dots (PQDs) are an exciting platform for on-demand quantum, and classical optoelectronic and photonic devices. However, their potential success is limited by the extreme sensitivity and low stability arising from their weak intrinsic lattice bond energy and complex surface chemistry. Here we report a novel platform of buried perovskite quantum dots (b-PQDs) in a three-…
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Colloidal perovskite quantum dots (PQDs) are an exciting platform for on-demand quantum, and classical optoelectronic and photonic devices. However, their potential success is limited by the extreme sensitivity and low stability arising from their weak intrinsic lattice bond energy and complex surface chemistry. Here we report a novel platform of buried perovskite quantum dots (b-PQDs) in a three-dimensional perovskite thin-film, fabricated using one-step, flash annealing, which overcomes surface related instabilities in colloidal perovskite dots. The b-PQDs demonstrate ultrabright and stable single-dot emission, with resolution-limited linewidths below 130 μeV, photon-antibunching (g^2(0)=0.1), no blinking, suppressed spectral diffusion, and high photon count rates of 10^4/s, consistent with unity quantum yield. The ultrasharp linewidth resolves exciton fine-structures (dark and triplet excitons) and their dynamics under a magnetic field. Additionally, b-PQDs can be electrically driven to emit single photons with 1 meV linewidth and photon-antibunching (g^2(0)=0.4). These results pave the way for on-chip, low-cost single-photon sources for next generation quantum optical communication and sensing.
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Submitted 10 January, 2025;
originally announced January 2025.
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Observation of topological prethermal strong zero modes
Authors:
Feitong Jin,
Si Jiang,
Xuhao Zhu,
Zehang Bao,
Fanhao Shen,
Ke Wang,
Zitian Zhu,
Shibo Xu,
Zixuan Song,
Jiachen Chen,
Ziqi Tan,
Yaozu Wu,
Chuanyu Zhang,
Yu Gao,
Ning Wang,
Yiren Zou,
Aosai Zhang,
Tingting Li,
Jiarun Zhong,
Zhengyi Cui,
Yihang Han,
Yiyang He,
Han Wang,
Jianan Yang,
Yanzhe Wang
, et al. (20 additional authors not shown)
Abstract:
Symmetry-protected topological phases cannot be described by any local order parameter and are beyond the conventional symmetry-breaking paradigm for understanding quantum matter. They are characterized by topological boundary states robust against perturbations that respect the protecting symmetry. In a clean system without disorder, these edge modes typically only occur for the ground states of…
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Symmetry-protected topological phases cannot be described by any local order parameter and are beyond the conventional symmetry-breaking paradigm for understanding quantum matter. They are characterized by topological boundary states robust against perturbations that respect the protecting symmetry. In a clean system without disorder, these edge modes typically only occur for the ground states of systems with a bulk energy gap and would not survive at finite temperatures due to mobile thermal excitations. Here, we report the observation of a distinct type of topological edge modes, which are protected by emergent symmetries and persist even up to infinite temperature, with an array of 100 programmable superconducting qubits. In particular, through digital quantum simulation of the dynamics of a one-dimensional disorder-free "cluster" Hamiltonian, we observe robust long-lived topological edge modes over up to 30 cycles at a wide range of temperatures. By monitoring the propagation of thermal excitations, we show that despite the free mobility of these excitations, their interactions with the edge modes are substantially suppressed in the dimerized regime due to an emergent U(1)$\times$U(1) symmetry, resulting in an unusually prolonged lifetime of the topological edge modes even at infinite temperature. In addition, we exploit these topological edge modes as logical qubits and prepare a logical Bell state, which exhibits persistent coherence in the dimerized and off-resonant regime, despite the system being disorder-free and far from its ground state. Our results establish a viable digital simulation approach to experimentally exploring a variety of finite-temperature topological phases and demonstrate a potential route to construct long-lived robust boundary qubits that survive to infinite temperature in disorder-free systems.
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Submitted 8 January, 2025;
originally announced January 2025.
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Exploring nontrivial topology at quantum criticality in a superconducting processor
Authors:
Ziqi Tan,
Ke Wang,
Sheng Yang,
Fanhao Shen,
Feitong Jin,
Xuhao Zhu,
Yujie Ji,
Shibo Xu,
Jiachen Chen,
Yaozu Wu,
Chuanyu Zhang,
Yu Gao,
Ning Wang,
Yiren Zou,
Aosai Zhang,
Tingting Li,
Zehang Bao,
Zitian Zhu,
Jiarun Zhong,
Zhengyi Cui,
Yihang Han,
Yiyang He,
Han Wang,
Jianan Yang,
Yanzhe Wang
, et al. (15 additional authors not shown)
Abstract:
The discovery of nontrivial topology in quantum critical states has introduced a new paradigm for classifying quantum phase transitions and challenges the conventional belief that topological phases are typically associated with a bulk energy gap. However, realizing and characterizing such topologically nontrivial quantum critical states with large particle numbers remains an outstanding experimen…
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The discovery of nontrivial topology in quantum critical states has introduced a new paradigm for classifying quantum phase transitions and challenges the conventional belief that topological phases are typically associated with a bulk energy gap. However, realizing and characterizing such topologically nontrivial quantum critical states with large particle numbers remains an outstanding experimental challenge in statistical and condensed matter physics. Programmable quantum processors can directly prepare and manipulate exotic quantum many-body states, offering a powerful path for exploring the physics behind these states. Here, we present an experimental exploration of the critical cluster Ising model by preparing its low-lying critical states on a superconducting processor with up to $100$ qubits. We develop an efficient method to probe the boundary $g$-function based on prepared low-energy states, which allows us to uniquely identify the nontrivial topology of the critical systems under study. Furthermore, by adapting the entanglement Hamiltonian tomography technique, we recognize two-fold topological degeneracy in the entanglement spectrum under periodic boundary condition, experimentally verifying the universal bulk-boundary correspondence in topological critical systems. Our results demonstrate the low-lying critical states as useful quantum resources for investigating the interplay between topology and quantum criticality.
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Submitted 8 January, 2025;
originally announced January 2025.
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Field-free perpendicular magnetization switching of low critical current density at room temperature in TaIrTe4/ferromagnet heterostructures
Authors:
Lujun Wei,
Pai Liu,
Jincheng Peng,
Yanghui Li,
Lina Chen,
Ping Liu,
Feng Li,
Wei Niu,
Fei Huang,
Jiaju Yang,
Shuang Zhou,
Yu Lu,
Tianyu Liu,
Jiarui Chen,
Weihao Wang,
Jian Zhang,
Jun Du,
Yong Pu
Abstract:
Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve field-free deterministic switching of perpendicular magnetization, additional magnetic field, magnetic layer assistance, or artificially designed structural sym…
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Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve field-free deterministic switching of perpendicular magnetization, additional magnetic field, magnetic layer assistance, or artificially designed structural symmetry breaking are usually required, which are not conducive to the high-density integration and application of low-power devices. However, 2D Weyl semimetals with low-symmetry structures have recently been found to generate z-spin-polarized currents, which may induce out-of-plane damping-like torques to their neighboring ferromagnetic layers, and realize deterministic perpendicular magnetization switching at zero magnetic field. In this Letter, we report that current-induced field-free magnetization switching at room temperature can be achieved in a perpendicularly magnetized TaIrTe4/Pt/Co/Pt device, and the critical switching current density can be lowered to be about 2.64*105 Acm-2. This study suggests that TaIrTe4 has great potential for the design of room-temperature efficient spintronic devices.
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Submitted 7 January, 2025;
originally announced January 2025.
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Competing Hexagonal and Square Lattices on a Spherical Surface
Authors:
Han Xie,
Wenyu Liu,
Zhenyue Lu,
Jeff Z. Y. Chen,
Yao Li
Abstract:
The structural properties of packed soft-core particles provide a platform to understand the cross-pollinated physical concepts in solid-state- and soft-matter physics. Confined on spherical surface, the traditional differential geometry also dictates the overall defect properties in otherwise regular crystal lattices. Using molecular dynamics simulation of the Hertzian model as a tool, we report…
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The structural properties of packed soft-core particles provide a platform to understand the cross-pollinated physical concepts in solid-state- and soft-matter physics. Confined on spherical surface, the traditional differential geometry also dictates the overall defect properties in otherwise regular crystal lattices. Using molecular dynamics simulation of the Hertzian model as a tool, we report here the emergence of new types of disclination patterns: domain and counter-domain defects, when hexagonal and square patterns coexist. A new angle is presented to understand the incompatibility between tiling lattice shapes and the available spherical areal shapes, which is common in nature -- from molecular systems in biology to backbone construction in architectures.
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Submitted 2 January, 2025;
originally announced January 2025.
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A Discrete Formulation of Second Stiefel-Whitney Class for Band Theory
Authors:
Ken Shiozaki,
Jing-Yuan Chen
Abstract:
Topological invariants in band theory are often formulated assuming that Bloch wave functions are smoothly defined over the Brillouin zone (BZ). However, first-principles band calculations typically provide Bloch states only at discrete points in the BZ, rendering standard continuum-based approaches inapplicable. In this work, we focus on the second Stiefel-Whitney class $w_2$, a key…
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Topological invariants in band theory are often formulated assuming that Bloch wave functions are smoothly defined over the Brillouin zone (BZ). However, first-principles band calculations typically provide Bloch states only at discrete points in the BZ, rendering standard continuum-based approaches inapplicable. In this work, we focus on the second Stiefel-Whitney class $w_2$, a key $\mathbb{Z}_2$ topological invariant under PT symmetry that characterizes various higher-order topological insulators and nodal-line semimetals. We develop a fully discrete, gauge-fixing-free formula for $w_2$ which depends solely on the Bloch states sampled at discrete BZ points. Furthermore, we clarify how our discrete construction connects to lattice field theory, providing a unifying perspective that benefits both high-energy and condensed matter approaches.
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Submitted 25 December, 2024;
originally announced December 2024.
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Advancing Surface Chemistry with Large-Scale Ab-Initio Quantum Many-Body Simulations
Authors:
Zigeng Huang,
Zhen Guo,
Changsu Cao,
Hung Q. Pham,
Xuelan Wen,
George H. Booth,
Ji Chen,
Dingshun Lv
Abstract:
Predictive simulation of surface chemistry is of paramount importance for progress in fields from catalysis to electrochemistry and clean energy generation. Ab-initio quantum many-body methods should be offering deep insights into these systems at the electronic level, but are limited in their efficacy by their steep computational cost. In this work, we build upon state-of-the-art correlated wavef…
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Predictive simulation of surface chemistry is of paramount importance for progress in fields from catalysis to electrochemistry and clean energy generation. Ab-initio quantum many-body methods should be offering deep insights into these systems at the electronic level, but are limited in their efficacy by their steep computational cost. In this work, we build upon state-of-the-art correlated wavefunctions to reliably converge to the `gold standard' accuracy in quantum chemistry for application to extended surface chemistry. Efficiently harnessing graphics processing unit acceleration along with systematically improvable multiscale resolution techniques, we achieve linear computational scaling up to 392 atoms in size. These large-scale simulations demonstrate the importance of converging to these extended system sizes, achieving a validating handshake between simulations with different boundary conditions for the interaction of water on a graphene surface. We provide a new benchmark for this water-graphene interaction that clarifies the preference for water orientations at the graphene interface. This is extended to the adsorption of carbonaceous molecules on chemically complex surfaces, including metal oxides and metal-organic frameworks, where we consistently achieve chemical accuracy compared to experimental references, and well inside the scatter of traditional density functional material modeling approaches. This pushes the state of the art for simulation of molecular adsorption on surfaces, and marks progress into a post-density functional era for more reliable and improvable approaches to first-principles modeling of surface problems at an unprecedented scale and accuracy using ab-initio quantum many-body methods.
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Submitted 2 January, 2025; v1 submitted 24 December, 2024;
originally announced December 2024.