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Influence of carrier density and disorder on the Quantum Hall plateau widths in epitaxial graphene
Authors:
Ignacio Figueruelo-Campanero,
Yuriko Baba,
Alejandro Jimeno-Pozo,
Julia García-Pérez,
Elvira M. González,
Rodolfo Miranda,
Francisco Guinea,
Enrique Cánovas,
Daniel Granados,
Pierre Pantaleón,
Pablo Burset,
Mariela Menghini
Abstract:
Since its discovery, graphene has been one of the most prominent 2D materials due to its unique properties and broad range of possible applications. In particular, the half-integer Quantum Hall Effect (HI-QHE) characterized by the quantization of Hall resistivity as a function of applied magnetic field, offers opportunities for advancements in quantum metrology and the understanding of topological…
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Since its discovery, graphene has been one of the most prominent 2D materials due to its unique properties and broad range of possible applications. In particular, the half-integer Quantum Hall Effect (HI-QHE) characterized by the quantization of Hall resistivity as a function of applied magnetic field, offers opportunities for advancements in quantum metrology and the understanding of topological quantum states in this 2D material. While the role of disorder in stabilizing quantum Hall plateaus (QHPs) is widely recognized, the precise interplay between the plateaus width, disorder, mobility and carrier density remains less explored. In this work, we investigate the width of the $ν=6$ QHP in epitaxial graphene Hall bars, focusing on two distinct regions of the device with markedly different electronic mobilities. Depending on the storage conditions, it is possible to modify the carrier density of graphene QHE devices and consequently increase or reduce the mobility. Our experiments reveal mobility variations of up to 200$\%$ from their initial value. In particular, the sample storage time and ambient conditions cause also noticeable changes in the positions and extension of the QHPs. Our results show that the QHP extension for $ν=6$ differs significantly between the two regions, influenced by both mobility and disorder, rather than solely by carrier density. Transport simulations based on the Landauer-Büttiker formalism with Anderson disorder in a scaled model reveal the critical role of impurities in shaping graphene transport properties defining the extension of the QHPs. This study provides valuable insights into the interplay between mobility, disorder, and quantum transport in graphene systems.
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Submitted 15 January, 2025; v1 submitted 13 January, 2025;
originally announced January 2025.
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Near IR bandgap semiconductive 2D conjugated metal-organic framework with rhombic lattice and high mobility
Authors:
Lukas Sporrer,
Guojun Zhou,
Mingchao Wang,
Vasileios Balos,
Sergio Revuelta,
Kamil Jastrzembski,
Markus Loeffler,
Petko Petkov,
Thomas Heine,
Angieszka Kuc,
Enrique Canovas,
Zhehao Huang,
Xinliang Feng,
Renhao Dong
Abstract:
Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for log…
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Two-dimensional conjugated metal-organic frameworks (2D c-MOFs) are emerging as a unique class of 2D electronic materials. However, intrinsically semiconducting 2D c-MOFs with gaps in the Vis-NIR and high charge carrier mobility have been rare. Most of the reported semiconducting 2D c-MOFs are metallic (i.e. gapless), which limits their use in applications where larger band gaps are needed for logic devices. Herein, we design a new D2h-geometric ligand, 2,3,6,7,11,12,15,16-octahydroxyphenanthro(9,10b)triphenylene (OHPTP), and synthesize the first example of a 2D c-MOF single crystal (OHPTP-Cu) with a rhombohedral pore geometry after coordination with copper. The continuous rotation electron diffraction (cRED) analysis unveils the orthorhombic crystal structure at the atomic level with a unique AB layer stacking. The resultant Cu2(OHPTP) is a p-type semiconductor with an indirect band gap of about 0.50 eV and exhibits high electrical conductivity of 0.10 S cm-1 and high charge carrier mobility of 10.0 cm2V-1s-1. Density-functional theory calculations underline the predominant role of the out-of-plane charge transport in this semiquinone-based 2D c-MOFs.
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Submitted 28 May, 2024;
originally announced May 2024.
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Contactless determination and parametrization of charge carrier mobility in silicon as a function of injection level and temperature using time-resolved THz spectroscopy
Authors:
Sergio Revuelta,
Enrique Cánovas
Abstract:
Here, we analyze in a non-contact fashion charge carrier mobility as a function of injection level and temperature in silicon by time resolved THz spectroscopy (TRTS) and parametrize our data by the classical semi-empirical models of Klaassen and Dorkel & Leturcq. Our experimental results are in very good agreement with the pioneering works of Krausse and Dännhauser analyzing this phenomena by emp…
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Here, we analyze in a non-contact fashion charge carrier mobility as a function of injection level and temperature in silicon by time resolved THz spectroscopy (TRTS) and parametrize our data by the classical semi-empirical models of Klaassen and Dorkel & Leturcq. Our experimental results are in very good agreement with the pioneering works of Krausse and Dännhauser analyzing this phenomena by employing contact-based methods. This agreement, that validates our methodology, can only be achieved by considering charge carrier diffusion effects following above bandgap near-surface pump photo-excitation of the sample. From our results, obtained over a large range of injection levels, we conclude that the model of Klaassen is the best on describing the collected data at room temperature. Furthermore, we analyze by TRTS the dependence of charge carrier mobility with temperature for a fixed injection level. Once more, the parametrization made by the classical model of Klaassen describe our data appropriately even without the necessity of applying any fitting parameters (just with the charge carrier density as an input). In this respect, our work supports the validity of the model and parametrization proposed by Klaassen, and also illustrate how TRTS can be reliably employed for the quantitative determination of mobility in semiconductors as a function of key parameters as injection level and temperature.
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Submitted 8 March, 2023;
originally announced March 2023.
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Application of photoreflectance to advanced multilayer structures for photovoltaics
Authors:
D. Fuertes Marrón,
E. Cánovas,
I. Artacho,
C. R. Stanley,
M. Steer,
T. Kaizu,
Y. Shoji,
N. Ahsan,
Y. Okada,
E. Barrigón,
I. Rey-Stolle,
C. Algora,
A. Martí,
A. Luque
Abstract:
Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, incl…
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Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, including quantum-dot-based prototypes of intermediate band solar cells, quantum-well structures, highly mismatched alloys, and III-V-based multi-junction devices, thereby demonstrating the suitability of PR as a powerful diagnostic tool. Examples will be given to illustrate the value of this spectroscopic technique for PV including (i) the analysis of the PR spectra in search of critical points associated to absorption onsets; (ii) distinguishing signatures related to quantum confinement from those originating from delocalized band states; (iii) determining the intensity of the electric field related to built-in potentials at interfaces according to the Franz-Keldysh (FK) theory; and (v) determining the nature of different oscillatory PR signals among those ascribed to FK-oscillations, interferometric and photorefractive effects. The aim is to attract the interest of researchers in the field of PV to modulation spectroscopies, as they can be helpful in the analysis of their devices.
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Submitted 4 December, 2012;
originally announced December 2012.
