Showing 1–2 of 2 results for author: Buyanova, I A
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Electron paramagnetic resonance signatures of Co2+ and Cu2+ in b-Ga2O3
Authors:
Jan E. Stehr,
Detlev M. Hofmann,
Weimin M. Chen,
Irina A. Buyanova
Abstract:
Gallium oxide (b-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ~ 4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices and power electronics. However, all of these applications require a reliable and precise control of electrical and optical properties of the material, which can…
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Gallium oxide (b-Ga2O3) is a wide-bandgap compound semiconductor with a bandgap of ~ 4.9 eV that is currently considered promising for a wide range of applications ranging from transparent conducting electrodes to UV optoelectronic devices and power electronics. However, all of these applications require a reliable and precise control of electrical and optical properties of the material, which can be largely affected by impurities, such as transition metals commonly present during the growth. In this work we employ electron paramagnetic resonance (EPR) spectroscopy to obtain EPR signatures of the 3d-transition metals Co2+ and Cu2+ in b-Ga2O3 bulk crystals and powders that were unknown so far. Furthermore, we show that Co2+ and Cu2+ both preferentially reside on the octahedral gallium lattice site.
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Submitted 12 September, 2019;
originally announced September 2019.
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Measurements of strain and bandgap of coherently epitaxially grown wurtzite InAsP-InP core-shell nanowires
Authors:
D. J. O. Göransson,
M. T. Borgström,
Y. Q. Huang,
M. E. Messing,
D. Hessman,
I. A. Buyanova,
W. M. Chen,
H. Q. Xu
Abstract:
We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence ($μ$PL) spectroscopy and micro-Raman ($μ$-Raman) spectroscopy measurements. W…
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We report on experimental determination of the strain and bandgap of InAsP in epitaxially grown InAsP-InP core-shell nanowires. The core-shell nanowires are grown via metal-organic vapor phase epitaxy. The as-grown nanowires are characterized by transmission electron microscopy, X-ray diffraction, micro-photoluminescence ($μ$PL) spectroscopy and micro-Raman ($μ$-Raman) spectroscopy measurements. We observe that the core-shell nanowires are of wurtzite (WZ) crystal phase and are coherently strained, with the core and the shell having the same number of atomic planes in each nanowire. We determine the predominantly uniaxial strains formed in the core-shell nanowires along the nanowire growth axis and demonstrate that the strains can be described using an analytical expression. The bandgap energies in the strained WZ InAsP core materials are extracted from the $μ$PL measurements of individual core-shell nanowires. The coherently strained core-shell nanowires demonstrated in this work offer the potentials for use in constructing novel optoelectronic devices and for development of piezoelectric photovoltaic devices.
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Submitted 12 April, 2019;
originally announced April 2019.
